KR20180135122A - Metal substrate - Google Patents
Metal substrate Download PDFInfo
- Publication number
- KR20180135122A KR20180135122A KR1020187036144A KR20187036144A KR20180135122A KR 20180135122 A KR20180135122 A KR 20180135122A KR 1020187036144 A KR1020187036144 A KR 1020187036144A KR 20187036144 A KR20187036144 A KR 20187036144A KR 20180135122 A KR20180135122 A KR 20180135122A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- adhesive
- substrate
- metal plate
- metal substrate
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 134
- 239000002184 metal Substances 0.000 title claims abstract description 134
- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 239000000853 adhesive Substances 0.000 claims abstract description 72
- 230000001070 adhesive effect Effects 0.000 claims abstract description 71
- 230000003746 surface roughness Effects 0.000 claims abstract description 23
- 239000000049 pigment Substances 0.000 claims abstract description 21
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 12
- 239000007787 solid Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 26
- 229920001225 polyester resin Polymers 0.000 claims description 11
- 239000004645 polyester resin Substances 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 26
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 18
- 239000002245 particle Substances 0.000 description 18
- 230000000704 physical effect Effects 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical class OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 13
- 238000011156 evaluation Methods 0.000 description 11
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- 239000000463 material Substances 0.000 description 9
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- 150000001340 alkali metals Chemical class 0.000 description 4
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- 230000015556 catabolic process Effects 0.000 description 2
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- 239000011651 chromium Substances 0.000 description 2
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- 239000007772 electrode material Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
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- KHARCSTZAGNHOT-UHFFFAOYSA-N naphthalene-2,3-dicarboxylic acid Chemical compound C1=CC=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 KHARCSTZAGNHOT-UHFFFAOYSA-N 0.000 description 2
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Abstract
금속판에 소정의 피막을 적층하는 것에 의해, 피막의 표면을 평활하게 함과 함께, 피막이 절연성을 갖는 금속 기판을 제공한다. 금속판의 표면에, 접착제를 통하여 1층의 열가소성 수지 필름이 적층되어 있고, 상기 필름은, 고체 안료의 체적분율이 20% 이하인 조성물로부터 얻어진 것이며, 막 두께가 12μm 이상 250μm 이하, 적층 후의 상기 필름 표면의 표면 거칠기 Ra가 30nm 이하인 것을 특징으로 하는 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용되는 금속 기판으로 한다.A metal substrate is provided by laminating a predetermined film on a metal plate so that the surface of the film is smoothed and the film has insulation property. A thermoplastic resin film of one layer is laminated on the surface of a metal plate through an adhesive. The film is obtained from a composition having a volume fraction of solid pigment of 20% or less, and has a film thickness of 12 占 퐉 or more and 250 占 퐉 or less, Wherein the surface roughness Ra of the substrate is 30 nm or less.
Description
본 발명은, 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용되는 금속 기판으로서, 피막의 표면을 평활하게 함과 함께, 피막의 표면이 절연성을 갖는 금속 기판에 관한 것이다.The present invention relates to a metal substrate for use in a substrate film solar cell or a top-emission type organic EL device, wherein the surface of the film is smoothed and the surface of the film has insulating property.
아몰퍼스(amorphous) 실리콘이나, CdS·CuInSe2 등의 화합물 반도체를 이용한, 이른바 박막 반도체 태양 전지(이하, 박막 태양 전지라고 한다.)로서, 슈퍼스트레이트형 박막 태양 전지와 서브스트레이트형 박막 태양 전지의 2종류의 구조가 알려져 있다.As a so-called thin film semiconductor solar cell (hereinafter referred to as a thin film solar cell) using amorphous silicon or a compound semiconductor such as CdS / CuInSe 2 , a superstrate thin film solar cell and a substrate thin film solar cell 2 The structure of the kind is known.
슈퍼스트레이트형 박막 태양 전지에서는, 통상, 기판, 투명 전극, 광전 변환층, 이면 전극의 순서로 적층된 구조이며, 기판측으로부터 광을 입사시키고 있다. 한편, 서브스트레이트형 박막 태양 전지에서는, 통상, 기판, 이면 전극, 광전 변환층, 투명 전극의 순서로 적층된 구조이며, 투명 전극측으로부터 광을 입사시키고 있다.In a superstrate type thin film solar cell, a structure is generally a structure in which a substrate, a transparent electrode, a photoelectric conversion layer, and a back electrode are stacked in this order, and light is incident from the substrate side. On the other hand, in a substrate thin film solar cell, a substrate, a back electrode, a photoelectric conversion layer, and a transparent electrode are stacked in this order, and light is incident from the transparent electrode side.
종래, 박막 태양 전지의 기판으로서, 투광성의 유리나 플라스틱 등이 이용되어 왔다. 그러나, 유리는, 깨지기 쉬운 데다가 가공성이 부족하고, 무거워서 비용이 높은 등의 문제가 있고, 또한, 플라스틱은 투습성이 있기 때문에, 가스 배리어층을 설치할 필요가 있어, 비용이 비교적 높아져 버리는 것에 더하여, 열을 가하지 않고 가공하는 것은 어렵다.BACKGROUND ART [0002] Conventionally, light-transmitting glass, plastic, or the like has been used as a substrate of a thin film solar cell. However, since the glass is fragile, the workability is insufficient, and the glass is heavy and the cost is high. In addition, since the plastic has moisture permeability, it is necessary to provide the gas barrier layer, and in addition to the relatively high cost, It is difficult to process without adding.
그런데, 서브스트레이트형 박막 태양 전지는 투명 전극측으로부터 광을 입사시키고 있기 때문에, 서브스트레이트형 박막 태양 전지의 기판에는 투광성이 요구되지 않는다. 그 때문에, 유리나 플라스틱과 같은 기판이 아닌, 금속판과 같은 투광성을 갖지 않지만 가공성이 우수한 기판을 이용할 수 있다. 단, 박막 태양 전지로서 기능하기 위해서는, 기판의 표면이 평활하고, 또한 이 표면이 절연성을 가질 필요가 있지만, 금속판 자신의 표면은 통상 1μm 정도 이상의 요철을 갖고, 또한 도전성이 있기 때문에, 그대로는 기판으로서 이용할 수 없다. 그래서, 상기의 조건을 만족하도록 금속판 상에 필름을 형성하면, 금속판을 기판으로서 이용할 수 있게 된다고 생각된다. 이하의 특허문헌 1이나 2에서 이와 같은 기판이 제안되어 있다.However, in the substrate thin film solar cell, since light is incident from the transparent electrode side, the substrate of the substrate thin film solar cell is not required to have transparency. Therefore, it is possible to use a substrate which does not have translucency but has excellent processability, such as a metal plate, instead of a substrate such as glass or plastic. However, in order to function as a thin film solar cell, the surface of the substrate must be smooth and the surface must have insulating property. However, since the surface of the metal plate itself usually has irregularities of about 1 탆 or more and has conductivity, . Thus, if a film is formed on the metal plate so as to satisfy the above conditions, it is considered that the metal plate can be used as the substrate. Such a substrate has been proposed in Patent Documents 1 and 2 below.
특허문헌 1에는, 필름 표면의 높이 400nm 이상의 돌기가 150개/mm2 이하이고, 필름의 3차원 표면 거칠기가 8nm∼25nm인 것을 특징으로 하는 금속판 라미네이트용 폴리에스터 필름이 기재되어 있다. 그러나, 이 특허문헌 1에서는, 상기 필름을 가열한 금속판에 라미네이트하여 금속 기판으로 하고 있으며 접착제를 이용하고 있지 않기 때문에, 이 금속 기판을 서브스트레이트형 박막 태양광 발전·유기 EL 조명으로서 이용하는 경우에는 필름과 금속판의 접착성이 불충분할 우려가 있다.Patent Document 1 describes a polyester film for a metal plate laminate characterized in that the number of protrusions having a height of 400 nm or more on the surface of the film is 150 / mm 2 or less and the three-dimensional surface roughness of the film is 8 nm to 25 nm. However, in Patent Document 1, since the film is laminated on a heated metal plate to form a metal substrate and no adhesive is used, when the metal substrate is used as a substrate thin film solar cell / organic EL lighting, The adhesion between the metal plate and the metal plate may be insufficient.
특허문헌 2에는, 기재층과, 그의 적어도 한쪽 면에 형성된 평활층으로 이루어지는 필름으로서, 평활층의 표면에 있어서의 표면 거칠기 Ra가 5.0nm 이하인 유기 전기발광 조명 기판용 폴리에스터 필름이 기재되어 있다. 그러나, 특허문헌 2에서는, 기재층 위에 표면이 평활한 평활층을 설치하여 복수층의 필름으로 하는 것에 의해 필름 표면을 평활하게 하고 있어, 비용면에서의 문제가 생겨 버린다.Patent Document 2 discloses a polyester film for an organic electroluminescent illumination substrate having a surface layer having a surface roughness Ra of 5.0 nm or less as a film comprising a base layer and a smoothing layer formed on at least one side thereof. However, in Patent Document 2, a smoothing layer having a smooth surface is provided on the substrate layer to form a plurality of films, thereby making the surface of the film smooth, resulting in a cost problem.
본 발명은, 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용되는 금속 기판으로서, 열을 가하지 않고 가공 가능하며, 또한 낮은 비용으로 제작 가능함에도 불구하고, 금속판의 표면의 평활성이 우수함과 함께, 절연성도 우수한 금속 기판의 제공을 과제로서 내걸었다.DISCLOSURE OF THE INVENTION It is an object of the present invention to provide a metal substrate for use in a substrate thin film solar cell or a top emission type organic EL device which can be processed without heating and can be manufactured at low cost, Together with this, it has been proposed to provide a metal substrate having excellent insulating properties.
본 발명자들은, 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용되는 금속 기판으로서, 금속판에 적층한 피막의 표면을 평활하게 함과 함께, 피막의 표면이 절연성을 갖는 금속 기판을 완성하기에 이르렀다.The present inventors have found that a metal substrate used for a substrate thin film solar cell or a top emission type organic EL device is a metal substrate in which a surface of a film laminated on a metal plate is smoothed and the surface of the film is insulated, .
즉, 본 발명은, 금속판의 표면에, 접착제를 통하여 1층의 열가소성 수지 필름이 적층되어 있고, 상기 필름은, 고체 안료의 체적분율이 20% 이하인 조성물로부터 얻어진 것이며, 막 두께가 12μm 이상 250μm 이하, 적층 후의 상기 필름 표면의 표면 거칠기 Ra가 30nm 이하인 것을 특징으로 하는 금속 기판으로서, 상기 금속 기판은, 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용된다.That is, the present invention is a laminated film comprising a laminate of a thermoplastic resin film of one layer on the surface of a metal plate with an adhesive, wherein the film is obtained from a composition having a volume fraction of solid pigment of 20% or less and a film thickness of 12 μm or more and 250 μm or less , And the surface roughness Ra of the film surface after lamination is 30 nm or less. The metal substrate is used for a substrate thin film solar cell or a top-emission type organic EL device.
상기 열가소성 수지는 폴리에스터 수지인 것이 바람직하다.The thermoplastic resin is preferably a polyester resin.
상기 적층 후의 필름 표면의 표면 거칠기 Ra는 10nm 이하인 것이 바람직하다.The surface roughness Ra of the film surface after lamination is preferably 10 nm or less.
본 발명에 따른 금속 기판은, 금속판에 소정의 필름을 적층하는 것에 의해, 금속 기판의 표면이 평활해지고, 더욱이 금속 기판이 절연성을 갖는 것이 되었다. 이 가공성이 우수한 금속 기판을 이용하는 것에 의해, 저비용으로 박막 태양 전지나 유기 EL 소자를 얻는 것이 가능해졌다.In the metal substrate according to the present invention, the surface of the metal substrate is smoothed by laminating a predetermined film on the metal plate, and further, the metal substrate has insulation property. By using the metal substrate having excellent processability, it is possible to obtain a thin film solar cell and an organic EL device at low cost.
본 발명의 금속 기판은, 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용되는 것으로, 금속판의 적어도 한쪽 면에 접착제를 통하여 1층의 열가소성 수지 필름이 적층된 것이다.The metal substrate of the present invention is used in a substrate thin film solar cell or a top-emission type organic EL device, in which a single-layer thermoplastic resin film is laminated on at least one side of a metal plate through an adhesive.
[금속판][plate]
본 발명의 금속 기판에 이용하는 금속판은, 냉연 강판, 용융 순아연 도금 강판(GI), 또는 합금화 용융 Zn-Fe 도금 강판(GA), 합금화 용융 Zn-5%Al 도금 강판(GF), 전기 순아연 도금 강판(EG), 전기 Zn-Ni 도금 강판, 알루미늄판, 타이타늄판, 갈바륨 강판 등이며, 논크로메이트인 것이 바람직하지만, 크로메이트 처리 또는 무처리의 것도 사용 가능하다. 금속판의 두께는 특별히 한정되지 않지만, 0.3∼2.5mm 정도의 것을 적절히 사용할 수 있다.The metal plate used for the metal substrate of the present invention may be any of cold-rolled steel sheets, hot-rolled galvanized steel sheets (GI), galvannealed Zn-Fe plated steel sheets (GA), galvannealed Zn-5% Al coated steel sheets (GF) Electroplated steel sheet (EG), electric Zn-Ni plated steel sheet, aluminum plate, titanium plate, galvanized steel sheet and the like, preferably non-chromate, but chromate treatment or no treatment may also be used. The thickness of the metal plate is not particularly limited, but a thickness of about 0.3 to 2.5 mm can be suitably used.
[접착제][glue]
본 발명에 이용하는 접착제에는, 수지가 함유되어 있다. 수지는 특별히 한정되지 않지만, 폴리올레핀 수지, 폴리에스터 수지, 폴리스타이렌 수지, 폴리우레탄 수지 등을 들 수 있고, 폴리올레핀 수지 또는 폴리에스터 수지인 것이 바람직하다. 접착제 형성용 조성물 중의 고형분은 15∼35질량%인 것이 바람직하고, 보다 바람직하게는 20∼30질량%이다.The adhesive used in the present invention contains a resin. The resin is not particularly limited, and examples thereof include a polyolefin resin, a polyester resin, a polystyrene resin, and a polyurethane resin, and it is preferably a polyolefin resin or a polyester resin. The solid content in the composition for forming an adhesive is preferably 15 to 35 mass%, more preferably 20 to 30 mass%.
폴리에스터 수지는, 이염기산 등의 다염기산과 다가 알코올류의 축합 반응에 의해 얻어지는 것이다.The polyester resin is obtained by a condensation reaction between a polybasic acid such as dibasic acid and a polyhydric alcohol.
폴리에스터 수지의 원료로서 이용되는 다염기산으로서는, 예를 들어, 말레산, 무수 말레산, 푸마르산, 이타콘산, 무수 이타콘산 등의 α,β-불포화 이염기산; 프탈산, 무수 프탈산, 할로젠화 무수 프탈산, 아이소프탈산, 테레프탈산, 테트라하이드로프탈산, 테트라하이드로 무수 프탈산, 헥사하이드로프탈산, 헥사하이드로아이소프탈산, 헥사하이드로테레프탈산, 사이클로펜타다이엔-무수 말레산 부가물, 석신산, 말론산, 글루타르산, 아디프산, 세바크산, 1,10-데케인 다이카복실산, 2,6-나프탈렌 다이카복실산, 2,7-나프탈렌 다이카복실산, 2,3-나프탈렌 다이카복실산, 2,3-나프탈렌 다이카복실산 무수물, 4,4'-바이페닐 다이카복실산, 및 이들의 다이알킬 에스터 등의 포화 이염기산 등을 들 수 있지만, 특별히 한정되는 것은 아니다. 다염기산은, 1종류만을 이용해도 되고, 적절히 2종류 이상을 혼합하여 이용해도 된다.Examples of the polybasic acid used as a raw material for the polyester resin include?,? - unsaturated dibasic acids such as maleic acid, maleic anhydride, fumaric acid, itaconic acid, and itaconic anhydride; There may be mentioned phthalic acid, phthalic anhydride, phthalic anhydride, isophthalic acid, terephthalic acid, tetrahydrophthalic acid, tetrahydrophthalic anhydride, hexahydrophthalic acid, hexahydro isophthalic acid, hexahydroterephthalic acid, cyclopentadiene- Naphthalene dicarboxylic acid, 2,3-naphthalene dicarboxylic acid, 2,3-naphthalene dicarboxylic acid, 2,6-naphthalene dicarboxylic acid, 2,6-naphthalene dicarboxylic acid, Naphthalenedicarboxylic acid anhydride, 2,3-naphthalenedicarboxylic acid anhydride, 4,4'-biphenyldicarboxylic acid, and saturated dibasic acids such as dialkyl esters thereof, but are not particularly limited. The polybasic acid may be used singly or in a mixture of two or more kinds.
폴리에스터 수지의 원료로서 이용되는 다가 알코올류로서는, 예를 들어 에틸렌 글리콜, 다이에틸렌 글리콜, 폴리에틸렌 글리콜 등의 에틸렌 글리콜류, 프로필렌 글리콜, 다이프로필렌 글리콜, 폴리프로필렌 글리콜 등의 프로필렌 글리콜류, 2-메틸-1,3-프로페인다이올, 1,3-뷰테인다이올, 비스페놀 A와 프로필렌 옥사이드 또는 에틸렌 옥사이드의 부가물, 글리세린, 트라이메틸올프로페인, 1,3-프로페인다이올, 1,2-사이클로헥세인 글리콜, 1,3-사이클로헥세인 글리콜, 1,4-사이클로헥세인 글리콜, 파라자일렌 글리콜, 바이사이클로헥실-4,4'-다이올, 2,6-데칼린 글리콜, 트리스(2-하이드록시에틸)아이소사이아누레이트 등을 들 수 있지만, 특별히 한정되는 것은 아니다. 또한, 에탄올 아민 등의 아미노알코올류를 이용해도 된다. 이들 다가 알코올류는, 1종류만을 이용해도 되고, 적절히 2종류 이상을 혼합해도 된다. 또한, 필요에 따라 에폭시 수지, 다이아이소사이아네이트, 다이사이클로펜타다이엔 등에 의한 변성을 행해도 된다. Examples of polyhydric alcohols used as a raw material for the polyester resin include ethylene glycols such as ethylene glycol, diethylene glycol and polyethylene glycol, propylene glycols such as propylene glycol, dipropylene glycol and polypropylene glycol, 1,3-propanediol, adducts of bisphenol A with propylene oxide or ethylene oxide, glycerin, trimethylol propane, 1,3-propanediol, 1, Cyclohexane glycol, 1,3-cyclohexane glycol, 1,4-cyclohexane glycol, paraxylene glycol, bicyclohexyl-4,4'-diol, 2,6-decalin glycol, tris (2-hydroxyethyl) isocyanurate, and the like, but there is no particular limitation. Aminoalcohols such as ethanolamine may also be used. These polyhydric alcohols may be used alone or in combination of two or more. Further, if necessary, modification with an epoxy resin, diisocyanate, dicyclopentadiene or the like may be performed.
본 발명에서 이용되는 접착제로서는, 여러 가지 시판품을 적합하게 이용할 수 있다. 특히 접착제의 시판품으로서는, 예를 들어, 열가소성 폴리에스터계 핫멜트 접착제인 도아합성사제 아론 멜트(등록상표) PES 시리즈, 변성 올레핀을 주성분으로 한 핫멜트 접착제인 도아합성사제 아론 멜트(등록상표) PPET 시리즈, 도아합성사제 아론 마이티(등록상표) FS-175SV10, 도아합성사제 아론 마이티(등록상표) AS-60 등을 들 수 있다.As the adhesive used in the present invention, various commercially available products can be suitably used. Particularly, commercially available products of adhesives include Aaronmelt (registered trademark) PES series manufactured by Toa Synthetic Co., Ltd., a thermoplastic polyester hot melt adhesive, Aaronmelt (registered trademark) PPET series manufactured by Toa Synthetic Co., which is a hot melt adhesive mainly composed of modified olefin, AON Mighty (registered trademark) FS-175SV10 manufactured by Toagosei Co., Ltd. and AON Mighty (registered trademark) AS-60 manufactured by Toa Synthetic Co., Ltd.
상기 시판품을 접착제로서 이용하는 경우, 이들 시판품을 메틸 에틸 케톤, 메틸 아이소뷰틸 케톤, 톨루엔, 자일렌 등의 희석제로 희석한 것을 금속판에 도포한다.When the commercially available product is used as an adhesive, the commercially available product is diluted with a diluent such as methyl ethyl ketone, methyl isobutyl ketone, toluene or xylene, and applied to a metal plate.
[열가소성 수지 필름][Thermoplastic resin film]
본 발명에서 이용되는 열가소성 수지 필름으로서는, 특별히 한정은 없지만, 폴리에스터 필름, 폴리에틸렌 필름, 폴리프로필렌 필름, 폴리스타이렌 필름, 폴리바이닐알코올계 필름, 폴리염화바이닐 필름, 폴리염화바이닐리덴 필름, 불소 수지 필름, 셀룰로스계 필름, 폴리카보네이트 필름, 폴리아마이드 필름 등을 들 수 있다. 이들 중에서도 적합하게 사용할 수 있는 것은, 폴리에스터 필름이며, 보다 바람직한 것은 폴리에틸렌 테레프탈레이트(PET) 필름 또는 폴리에틸렌 나프탈레이트(PEN) 필름이며, 더욱 바람직한 것은 PEN 필름이다. 폴리에스터 필름 제작에 이용되는 폴리에스터 수지는 전술한 접착제에 이용되는 폴리에스터 수지의 제법과 마찬가지의 제법으로 제작할 수 있다.The thermoplastic resin film to be used in the present invention is not particularly limited, and examples thereof include a polyester film, a polyethylene film, a polypropylene film, a polystyrene film, a polyvinyl alcohol film, a polyvinyl chloride film, a polyvinyl chloride film, , A cellulose-based film, a polycarbonate film, and a polyamide film. Among them, a polyester film is preferably used, and a polyethylene terephthalate (PET) film or a polyethylene naphthalate (PEN) film is more preferable, and a PEN film is more preferable. The polyester resin used for producing the polyester film can be produced in the same manner as the polyester resin used for the above-mentioned adhesive.
본 발명에서 이용되는 열가소성 수지 필름은, 필름 단체(금속판에 접착하기 전의 상태에서의 필름)의 표면 거칠기 Ra가 30nm 이하인 것이 바람직하고, 보다 바람직하게는 필름 단체의 표면 거칠기 Ra가 10nm 이하이다. 필름 단체의 표면 거칠기 Ra가 30nm를 초과한 필름을 이용하여 금속 기판을 제작하면, 금속 기판의 표면 거칠기 Ra가 커져 버려, 금속 기판에 필름을 접착한 상태에 있어서의 필름 표면의 요철이 원인이 되어, 전극간의 단락에 의한 동작 불량을 초래할 우려가 있다.The thermoplastic resin film used in the present invention preferably has a surface roughness Ra of 30 nm or less, preferably 0.05 nm or less, more preferably 10 nm or less, in the film alone (film in the state before adhering to the metal plate). If a metal substrate is produced using a film having a surface roughness Ra of more than 30 nm, the surface roughness Ra of the metal substrate becomes large, and irregularities on the surface of the film in a state in which the film is adhered to the metal substrate , There is a fear of causing a malfunction due to a short circuit between the electrodes.
본 발명에서 이용되는 열가소성 수지 필름으로서는, 여러 가지 시판품을 적합하게 이용할 수 있다. 특히 폴리에스터 수지의 시판품으로서는, 예를 들어, 유니티카사제 엠브레트(등록상표) P652, 데이진듀퐁필름사제 테오넥스(등록상표) Q65FA 등을 들 수 있다.As the thermoplastic resin film used in the present invention, various commercially available products can be suitably used. Particularly, commercially available products of the polyester resin include, for example, Ambret (registered trademark) P652 manufactured by Unitika Co., Ltd., and Teonex (registered trademark) Q65FA manufactured by Daikin DuPont Films.
적층하는 열가소성 수지 필름의 막 두께는 12μm 이상 250μm 이하이다. 막 두께가 12μm 미만이면, 열가소성 수지 필름에 결함부가 존재할 우려가 있고, 금속 기판의 내전압이 0.1kV 미만이 되어 버려, 내전압(절연 내성)을 확보할 수 없을 우려가 있다. 또한, 막 두께가 250μm를 초과하면, 금속 기판을 절단 가공할 때에 필름의 절단 찌꺼기가 발생하기 쉬워져, 금속 기판의 제조 라인의 생산 효율이 저하될 우려가 있다.The film thickness of the laminated thermoplastic resin film is 12 占 퐉 or more and 250 占 퐉 or less. If the film thickness is less than 12 占 퐉, there is a possibility that defective portions are present in the thermoplastic resin film, the withstand voltage of the metal substrate becomes less than 0.1 kV, and the withstand voltage (insulation resistance) can not be ensured. In addition, when the film thickness exceeds 250 mu m, cutting scrape of the film is liable to occur when the metal substrate is cut, and the production efficiency of the production line of the metal substrate may be lowered.
[필름 표면의 평활성][Smoothness of film surface]
본 발명의 금속 기판에서는, 필름 표면이 평활할 필요가 있다. 구체적으로는, 금속 기판에 접착된 필름(적층 후의 필름)의 표면 거칠기 Ra가 30nm 이하이며, 바람직하게는 금속 기판에 접착된 필름의 표면 거칠기 Ra가 10nm 이하이다. 금속 기판에 접착된 필름의 표면 거칠기 Ra가 30nm를 초과하면, 필름 표면의 요철이 원인이 되어, 전극간의 단락에 의한 동작 불량을 초래할 우려가 있다. 한편, 먼지나 티끌 등의 입자가 부착되는 것에 의해 생긴 표면의 요철에 대해서는, 먼지나 티끌 등의 입자는 30nm 정도보다 훨씬 크기 때문에, 연마 등의 평활화에 의해 용이하게 제거할 수 있다. 그 때문에, 먼지나 티끌 등의 입자에 의한 요철은, 동작 불량으로 이어질 우려는 극히 낮다. 금속 기판에 접착된 필름의 표면 거칠기 Ra에 대해서는, 후술하는 측정 방법에 의해 측정할 수 있다.In the metal substrate of the present invention, the film surface needs to be smooth. Concretely, the surface roughness Ra of the film adhered to the metal substrate (film after lamination) is 30 nm or less, preferably the surface roughness Ra of the film adhered to the metal substrate is 10 nm or less. If the surface roughness Ra of the film adhered to the metal substrate exceeds 30 nm, irregularities on the surface of the film may be caused, which may cause a malfunction due to a short circuit between the electrodes. On the other hand, with respect to the irregularities of the surface caused by adhesion of particles such as dust and dirt, the particles such as dust and dirt are much larger than about 30 nm, so that they can be easily removed by smoothing or the like. Therefore, it is extremely unlikely that unevenness due to particles such as dust or dirt will lead to operation failure. The surface roughness Ra of the film adhered to the metal substrate can be measured by a measuring method described later.
[안료][Pigment]
필름 표면을 평활하게 하기, 구체적으로는 필름 표면의 표면 거칠기 Ra를 30nm 이하로 하기 위해서는, 필름에는 고체 안료가 함유되어 있지 않는 것이 바람직하다. 단, 착색 필름을 이용할 필요가 있는 경우는, 필름 형성용 조성물 중의 고체 안료의 체적분율을 20% 이하로 하는 것이 바람직하다. 고체 안료의 입경은 통상 30nm보다 꽤 크기 때문에, 필름 형성용 조성물 중의 고체 안료의 체적분율이 20%를 초과하면, 필름 표면의 표면 거칠기 Ra를 30nm 이하로 하는 것이 곤란해진다.In order to smooth the surface of the film, specifically, to make the surface roughness Ra of the film surface 30 nm or less, it is preferable that the film contains no solid pigment. However, when it is necessary to use a colored film, it is preferable that the volume fraction of the solid pigment in the film forming composition is 20% or less. Since the particle size of the solid pigment is usually larger than 30 nm, when the volume fraction of the solid pigment in the film forming composition exceeds 20%, it becomes difficult to set the surface roughness Ra of the film surface to 30 nm or less.
하기의 각각의 색으로 착색하기 위한 안료 종류의 예로서는, 백색: 산화타이타늄, 탄산칼슘, 산화아연, 황산바륨, 리토폰, 연백 등의 무기계 안료, 흑색: 아닐린 블랙, 니그로신 등의 유기계 안료, 카본 블랙, 철흑 등의 무기계 안료, 적색: 불용성 아조계(나프톨계 및 아닐라이드계) 또는 용성 아조계 등의 유기계 안료나, 벵갈라, 카드뮴 레드, 연단 등의 무기계 안료, 황색: 불용성 아조계(나프톨계 및 아닐라이드계), 용성 아조계, 퀴나크리돈계 등의 유기계 안료나, 크로뮴 옐로우, 카드뮴 옐로우, 니켈 타이타늄 옐로우, 황단, 스트론튬 크로메이트 등의 무기계 안료, 녹색: 유기 프탈로사이아닌계 안료, 청색: 유기 프탈로사이아닌계 안료, 다이옥사진계 안료, 감청, 군청, 코발트 블루, 에메랄드 그린 등의 무기계 안료, 오렌지색: 벤조이미다졸론계, 피라졸론계 등의 유기계 안료 등을 들 수 있다. 상기 착색 안료 중, 동일 색이라도 화학 구조가 상이한 것, 또는 상이한 색의 착색 안료를 2종류 이상 적당한 배합비로 혼합하는 것에 의해, 회색, 갈색, 자색, 적자색, 청자색, 오렌지색, 황금색 등 원하는 색으로 착색할 수 있다.Examples of pigment types for coloring each of the following colors include inorganic pigments such as white: titanium oxide, calcium carbonate, zinc oxide, barium sulfate, lithopone, and tungsten, organic pigments such as black: aniline black and nigrosine, (Naphthol-based or anilide-based) or soluble azo-based pigments, inorganic pigments such as spinach, cadmium red, and podium, yellow: insoluble azo pigments such as naphthol Organic pigments such as chromium yellow, cadmium yellow, nickel titanium yellow, brass, and strontium chromate; green: organic phthalocyanine pigments; blue pigments; Inorganic pigments such as organic phthalocyanine pigments, dioxazine pigments, iron oxide pigments, ultramarine blue, cobalt blue and emerald green, orange color: benzoimidazolone type, pyrazole type, And organic pigments such as rhenium series. Among the above-mentioned coloring pigments, pigments of different colors such as gray, brown, purple, reddish purple, bluish purple, orange, and golden can be obtained by mixing two or more kinds of color pigments having different chemical structures, can do.
예를 들어, 산화타이타늄에 있어서는, 평균 입경은, 예를 들어 입상의 경우는 대체로 0.1∼0.5μm, 바람직하게는 0.2μm 이상, 0.4μm 이하, 더욱 바람직하게는 0.2μm 이상, 0.3μm 이하로 하는 것이 추천된다. 평균 입경이 0.5μm를 초과하면, 산화타이타늄을 포함하는 필름 형성용 조성물로 형성된 필름 표면의 표면 거칠기 Ra를 30nm 이하로 하는 것이 곤란해진다.For example, in the case of titanium oxide, the average particle size is preferably 0.1 to 0.5 m, preferably 0.2 to 0.4 m, more preferably 0.2 to 0.3 m in the case of the granular phase Is recommended. If the average particle diameter exceeds 0.5 mu m, it becomes difficult to make the surface roughness Ra of the film surface formed of the film-forming composition containing titanium oxide 30 nm or less.
여기에서, 상기 산화타이타늄의 평균 입경은, 일반적인 입도 분포계에 의해 분급 후의 산화타이타늄 입자의 입도 분포를 측정하고, 그 측정 결과에 기초하여 산출되는 작은 입경측으로부터의 적산치 50%의 입도(D50)를 의미한다. 이러한 입도 분포는, 입자에 광을 쬐는 것에 의해 생기는 회절이나 산란의 강도 패턴에 의해 측정할 수 있고, 이와 같은 입도 분포계로서는, 예를 들어, 닛키소사제의 마이크로트랙 9220FRA나 마이크로트랙 HRA 등이 예시된다.Here, the average particle size of the titanium oxide is determined by measuring the particle size distribution of the titanium dioxide particles after classification by a general particle size distribution analyzer, and calculating the particle size (D50 ). Such a particle size distribution can be measured by the intensity pattern of diffraction or scattering generated by irradiating particles with light. Examples of such particle size distribution systems include Microtrack 9220FRA and Microtrack HRA manufactured by Nikkiso Co., Ltd. .
한편, 전술한 바람직한 평균 입경을 만족하는 산화타이타늄은, 시판품을 사용해도 되고, 예를 들어, 테이카사제의 TITANIX(등록상표) JR-301(평균 입경 0.30μm), JR-603(평균 입경 0.28μm), JR-806(평균 입경 0.25μm), JRNC(평균 입경 0.37μm) 등을 들 수 있다.For example, TITANIX TM JR-301 (average particle diameter 0.30 탆) and JR-603 (average particle diameter 0.28 탆) manufactured by TAYAX Co., Ltd. may be used as commercially available products, μm), JR-806 (average particle diameter: 0.25 μm), and JRNC (average particle diameter: 0.37 μm).
한편, 안료의 편석을 억제하기 위해서, 필름 형성용 조성물에는 안료 분산제를 첨가해도 된다. 적합한 안료 분산제는, 수용성 아크릴 수지, 수용성 스타이렌 아크릴 수지 및 비이온계 계면활성제로 이루어지는 군으로부터 선택되는 1종 이상이다. 이들을 이용한 경우, 착색 도막에는 안료 분산제가 잔존하게 된다.On the other hand, in order to suppress segregation of the pigment, a pigment dispersant may be added to the film-forming composition. Suitable pigment dispersants are at least one selected from the group consisting of water-soluble acrylic resins, water-soluble styrene acrylic resins and nonionic surfactants. When these are used, a pigment dispersing agent remains in the colored coating film.
[내전압][Withstanding voltage]
내전압은 후술하는 방법으로 측정되고 있으며, 0.1kV 이상이 바람직하다. 보다 바람직하게는 0.3kV 이상이며, 더욱 바람직하게는 1.0kV 이상이다. 내전압이 0.1kV 미만이면, 전극간의 단락에 의한 동작 불량을 초래할 우려가 있다.The withstand voltage is measured by the method described later, and preferably 0.1 kV or more. More preferably 0.3 kV or more, and further preferably 1.0 kV or more. If the withstand voltage is less than 0.1 kV, there is a fear that operation failure due to short-circuiting between the electrodes may occur.
[제조 방법][Manufacturing method]
금속판 상에 접착제를 도포하고, 그 후 소부를 행하고, 접착제 상에 필름을 접착하는 것에 의해, 본 발명에 따른 금속 기판을 제작할 수 있다.The metal substrate according to the present invention can be manufactured by applying an adhesive on a metal plate, baking it, and bonding the film to the adhesive.
금속판 상으로의 접착제의 도포는, 특별히 제한되지 않고, 기지의 방법을 적절히 채용할 수 있다. 조성물의 도포 방법으로서는, 예를 들어 바 코터법, 롤 코터법, 커텐 플로우 코터법, 스프레이법, 스프레이 링거법 등을 들 수 있고, 이들 중에서도, 비용 등의 관점에서 바 코터법, 롤 코터법, 스프레이 링거법이 바람직하다.The application of the adhesive onto the metal plate is not particularly limited, and a known method can be suitably employed. Examples of the application method of the composition include a bar coater method, a roll coater method, a curtain flow coater method, a spraying method, a spraying method and the like. Among them, from the viewpoint of cost, The sprayer method is preferred.
접착제를 도포 후, 소부를 행한다. 접착제의 소부 온도로서는, 예를 들어, 80℃ 이상 200℃ 이하가 바람직하고, 보다 바람직하게는 100℃ 이상 180℃ 이하이다. 이 소부에 의해, 금속판 상에 접착제가 도장된 접착제 도장 금속판이 제작된다. 한편, 소부 온도는, 도달 판온(Peak Metal Temperature: PMT)이다.After the adhesive is applied, baking is carried out. The baking temperature of the adhesive is, for example, preferably 80 占 폚 or higher and 200 占 폚 or lower, more preferably 100 占 폚 or higher and 180 占 폚 or lower. By this baking, an adhesive painted metal plate coated with an adhesive agent on the metal plate is produced. On the other hand, the baking temperature is a peak metal temperature (PMT).
다음에, 접착제 도장 금속판의 접착제 도포면 상에 필름을 접착한다. 접착제 도장 금속판으로의 필름의 접착 방법으로서는, 특별히 제한되지 않고, 기지의 방법을 적절히 채용할 수 있지만, 가압 접착법이 바람직하다. 가압 접착법은, 소정의 시간, 소정의 온도로 한 상태로 소정의 압력으로 가압하여 접착을 행하는 방법이지만, 가압 접착법은, 80℃ 이상 200℃ 이하에서 행하는 것이 바람직하고, 보다 바람직하게는 100℃ 이상 180℃ 이하이다. 또한, 가압 접착법은 5분 이하로 행하는 것이 바람직하고, 보다 바람직하게는 3분 이하이다. 가압 접착법은 0.5kgf/cm2 이상 100kgf/cm2 이하의 압력으로 행하는 것이 바람직하고, 보다 바람직하게는 1kgf/cm2 이상 50kgf/cm2 이하이다.Next, the film is adhered onto the adhesive-coated surface of the adhesive-coated metal plate. The method of adhering the film to the adhesive-coated metal sheet is not particularly limited, and a known method can be suitably employed, but a pressure bonding method is preferred. The pressure bonding method is a method in which the bonding is performed by pressing at a predetermined pressure in a state of being maintained at a predetermined temperature for a predetermined period of time. The pressure bonding method is preferably performed at 80 캜 or more and 200 캜 or less, more preferably 100 ≪ / RTI > The pressure bonding method is preferably performed for 5 minutes or less, more preferably 3 minutes or less. Pressure bonding method, it is preferable, and more preferably from 1kgf / cm 2 at least 50kgf / cm 2 or less is performed at a pressure of 0.5kgf / cm 2 more than 100kgf / cm 2 or less.
[서브스트레이트형 박막 태양 전지][Substrate type thin film solar cell]
본 발명에 따른 금속 기판을 구비한 서브스트레이트형 박막 태양 전지에 대해 설명한다. 서브스트레이트형 태양 전지는, 본 발명에 따른 금속 기판을 구비한 것이면, 공지된 어느 구조여도 되고, 예를 들어, 기본적으로는 본 발명에 따른 금속 기판의 필름 상에, 이면 전극, 광전 변환층, 투명 전극이 이 순서로 적층된 구조이다. 광전 변환층은, 투명 전극을 통과하여 도달한 광을 흡수하여 전류가 발생하는 층이고, 이면 전극 및 투명 전극은, 모두 광전 변환층에서 발생한 전류를 취출하기 위한 것이며, 모두 도전성 재료로 이루어진다. 광입사측의 투명 전극은 투광성을 가질 필요가 있다. 이면 전극, 광전 변환층, 투명 전극에 대해서는, 공지된 서브스트레이트형 박막 태양 전지와 마찬가지의 재료를 이용할 수 있다.A substrate thin film solar cell having a metal substrate according to the present invention will be described. The substrate type solar cell may have any known structure as long as it has the metal substrate according to the present invention. For example, basically, the back electrode, photoelectric conversion layer, And transparent electrodes are stacked in this order. The photoelectric conversion layer is a layer in which a current is generated by absorbing the light that has reached through the transparent electrode. The back electrode and the transparent electrode are all for extracting a current generated in the photoelectric conversion layer and are all made of a conductive material. The transparent electrode on the light incidence side needs to have transparency. As the back electrode, the photoelectric conversion layer, and the transparent electrode, materials similar to those of known substrate thin film solar cells can be used.
이면 전극은, 특별히 제한되는 것은 아니고, 예를 들어, Mo, Cr, W 등의 금속, 및 이들 금속을 조합한 것을 이용할 수 있다. 이면 전극은, 단층 구조여도 되고, 2층 구조 등의 적층 구조여도 된다. 이면 전극의 두께는, 특별히 제한되는 것은 아니지만, 두께가 0.1μm 이상인 것이 바람직하고, 0.45∼1.0μm인 것이 보다 바람직하다.The back electrode is not particularly limited, and for example, a metal such as Mo, Cr, W, and a combination of these metals can be used. The back electrode may have a single-layer structure or a laminated structure such as a two-layer structure. Thickness of the back electrode is not particularly limited, but is preferably 0.1 占 퐉 or more, more preferably 0.45 to 1.0 占 퐉.
광전 변환층의 구성은, 특별히 제한되는 것은 아니고, 예를 들어, 적어도 1종의 칼코파이라이트 구조의 화합물 반도체이다. 또한, 광전 변환층은, Ib족 원소와 IIIb족 원소와 VIb족 원소로 이루어지는 적어도 1종의 화합물 반도체여도 된다.The structure of the photoelectric conversion layer is not particularly limited, and is, for example, at least one compound semiconductor of chalcopyrite structure. In addition, the photoelectric conversion layer may be at least one compound semiconductor made of an Ib group element, a IIIb group element and a VIb group element.
더욱 광흡수율이 높고, 높은 광전 변환 효율이 얻어지기 때문에, 광전 변환층은, Cu 및 Ag로 이루어지는 군으로부터 선택된 적어도 1종의 Ib족 원소와, Al, Ga 및 In으로 이루어지는 군으로부터 선택된 적어도 1종의 IIIb족 원소와, S, Se 및 Te로 이루어지는 군으로부터 선택된 적어도 1종의 VIb족 원소로 이루어지는 적어도 1종의 화합물 반도체인 것이 바람직하다. 이 화합물 반도체로서는, CuAlS2, CuGaS2, CuInS2, CuAlSe2, CuGaSe2, CuInSe2(CIS), AgAlS2, AgGaS2, AgInS2, AgAlSe2, AgGaSe2, AgInSe2, AgAlTe2, AgGaTe2, AgInTe2, Cu(In1-xGax)Se2(CIGS), Cu(In1-xAlx)Se2, Cu(In1-xGax)(S, Se)2, Ag(In1-xGax)Se2, 및 Ag(In1-xGax)(S, Se)2 등을 들 수 있다.The photoelectric conversion layer contains at least one Group Ib element selected from the group consisting of Cu and Ag and at least one Group III element selected from the group consisting of Al, Ga and In, since the photoelectric conversion layer has a high light absorption rate and a high photoelectric conversion efficiency. Of at least one group IIIb element and at least one group VIb element selected from the group consisting of S, Se and Te. As the compound semiconductor, CuAlS 2, CuGaS 2, CuInS 2, CuAlSe 2, CuGaSe 2, CuInSe 2 (CIS), AgAlS 2, AgGaS 2, AgInS 2, AgAlSe 2, AgGaSe 2, AgInSe 2, AgAlTe 2, AgGaTe 2, AgInTe 2, Cu (In 1- x Ga x) Se 2 (CIGS), Cu (In 1-x Al x) Se 2, Cu (In 1-x Ga x) (S, Se) 2, Ag (In 1 -X Ga x ) Se 2 , and Ag (In 1-x Ga x ) (S, Se) 2 .
투명 전극은, 예를 들어, Al, B, Ga, Sb 등이 첨가된 ZnO, ITO(인듐-주석 산화물), 또는 SnO2 및 이들을 조합한 것에 의해 구성된다. 투명 전극은, 단층 구조여도 되고, 2층 구조 등의 적층 구조여도 된다. 또한, 투명 전극의 두께는, 특별히 제한되는 것은 아니지만, 0.3∼1μm가 바람직하다.The transparent electrode is composed of, for example, ZnO, ITO (indium-tin oxide), or SnO 2 doped with Al, B, Ga, Sb or the like and a combination thereof. The transparent electrode may have a single-layer structure or a laminated structure such as a two-layer structure. The thickness of the transparent electrode is not particularly limited, but is preferably 0.3 to 1 m.
서브스트레이트형 박막 태양 전지는 공지된 방법으로 제작할 수 있고, 예를 들어, 이하의 제조 방법으로 서브스트레이트형 박막 태양 전지를 제작할 수 있다. 우선, 본 발명에 따른 금속 기판 상에, 스퍼터링법, 진공 증착법, 열CVD법, 습식 도공법 등의 종래부터 알려져 있는 방법에 의해 이면 전극을 형성한다. 그 다음에, 이면 전극 상에 스퍼터링법, 진공 증착법, 열CVD법, 습식 도공법 등의 종래부터 알려져 있는 방법에 의해 광전 변환층을 형성한다. 계속해서, 광전 변환층 상에 스퍼터링법, 진공 증착법, 열CVD법, 습식 도공법 등의 종래부터 알려져 있는 방법에 의해 투명 전극을 형성한다.The substrate thin film solar cell can be manufactured by a known method. For example, a substrate thin film solar cell can be manufactured by the following manufacturing method. First, a back electrode is formed on a metal substrate according to the present invention by a conventionally known method such as a sputtering method, a vacuum deposition method, a thermal CVD method, and a wet coating method. Next, a photoelectric conversion layer is formed on the back electrode by a conventionally known method such as a sputtering method, a vacuum deposition method, a thermal CVD method, and a wet coating method. Subsequently, a transparent electrode is formed on the photoelectric conversion layer by a conventionally known method such as a sputtering method, a vacuum deposition method, a thermal CVD method, or a wet coating method.
한편, 투명 전극의 형성 시에 광전 변환층을 보호하기 위해서, 광전 변환층과 투명 전극 사이에 버퍼층을 설치해도 된다. 또한, 투명 전극 상에 봉지재를 설치해도 된다.On the other hand, in order to protect the photoelectric conversion layer at the time of forming the transparent electrode, a buffer layer may be provided between the photoelectric conversion layer and the transparent electrode. Further, an encapsulating material may be provided on the transparent electrode.
[탑 에미션형 유기 EL 소자][Top-Emission Type Organic EL Device]
본 발명에 따른 금속 기판은, 탑 에미션형 유기 EL 소자에도 적용 가능하다. 이와 같은 탑 에미션형 유기 EL 소자는, 본 발명에 따른 금속 기판을 구비한 것이면, 공지된 어느 구조여도 되고, 예를 들어, 기본적으로는 본 발명에 따른 금속 기판의 필름 상에, 전극, 유기층, 투명 도전막이 이 순서로 적층된 것이다. 전극, 유기층, 투명 도전막에 대해서는, 공지된 탑 에미션형 박막 태양 전지와 마찬가지의 재료를 이용할 수 있다. 탑 에미션형 유기 EL 소자에서는, 광은 투명 도전성 막을 투과하여(기판을 투과하지 않고) 취출되기 때문에, 기판으로서 투명하지 않은 금속판을 이용할 수 있다.The metal substrate according to the present invention is also applicable to a top-emission type organic EL element. Such a top-emission type organic EL device may be any known structure as long as it has the metal substrate according to the present invention. For example, basically, the top emission type organic EL device may be provided with electrodes, an organic layer, And a transparent conductive film are stacked in this order. As the electrode, the organic layer, and the transparent conductive film, the same material as that of the known top emission type thin film solar cell can be used. In the top-emission type organic EL device, since light is taken out through the transparent conductive film (not through the substrate), a metal plate that is not transparent can be used as the substrate.
전극은, 예를 들어, 인듐-주석 산화물(ITO), 인듐-아연 산화물(IZO), 주석 산화물, Au 등의 금속의 극박막, 도전성 고분자, 도전성의 유기 재료, 도펀트(도너 또는 억셉터) 함유 유기층, 도전체와 도전성 유기 재료(고분자 포함)의 혼합물, 또는 이들의 적층체 등이 재료로서 이용된다. 전극은, 이들 재료를 스퍼터링법이나 이온 도금법 등의 기상 성장법을 이용하여 성막할 수 있다.The electrode may be formed of a metal thin film such as indium-tin oxide (ITO), indium-zinc oxide (IZO), tin oxide or Au, a conductive polymer, An organic layer, a mixture of a conductor and a conductive organic material (including a polymer), or a laminate of these materials is used as a material. The electrode can be formed by vapor-phase growth such as sputtering or ion plating.
유기층의 유기 발광층은, 예를 들어, 안트라센, 나프탈렌, 피렌, 테트라센, 코로넨, 페릴렌, 프탈로페릴렌, 나프탈로페릴렌, 다이페닐뷰타다이엔, 테트라페닐뷰타다이엔, 쿠마린, 옥사다이아졸, 비스벤족사졸린, 비스스타이릴, 사이클로펜타다이엔, 퀴놀린 금속 착체, 트리스(8-하이드록시퀴놀리네이토)알루미늄 착체, 트리스(4-메틸-8-퀴놀리네이토)알루미늄 착체, 트리스(5-페닐-8-퀴놀리네이토)알루미늄 착체, 아미노퀴놀린 금속 착체, 벤조퀴놀린 금속 착체, 트라이-(p-터페닐-4-일)아민, 피란, 퀴나크리돈, 루브렌, 및 이들의 유도체, 또는 1-아릴-2,5-다이(2-싸이엔일)피롤 유도체, 다이스타이릴벤젠 유도체, 스타이릴아릴렌 유도체, 스타이릴아민 유도체, 및 이들 발광성 화합물로 이루어지는 기를 분자의 일부분에 갖는 화합물 또는 고분자 등이 재료로서 이용된다. 더욱이 상기 화합물로 대표되는 형광 색소 유래의 화합물뿐만 아니라, 이른바 인광 발광 재료, 예를 들어, Ir 착체, Os 착체, Pt 착체, 유로퓸 착체 등의 발광 재료, 또는 그것들을 분자 내에 갖는 화합물 또는 고분자도 이용된다. 유기층은, 스퍼터링법, 진공 증착법 등의 종래부터 알려져 있는 방법에 의해 형성할 수 있다. 한편, 유기층은, 유기 발광층 외에도 정공 주입층, 정공 수송층, 전자 수송층, 전자 주입층 등을 포함하고 있어도 된다.The organic light-emitting layer of the organic layer may be formed of a material selected from the group consisting of an anthracene, naphthalene, pyrene, tetracene, coronene, perylene, phthaloperylene, naphthaloperylene, diphenylbutadiene, (8-hydroxyquinolinato) aluminum complex, a tris (4-methyl-8-quinolinato) aluminum complex, a bis , Tris (5-phenyl-8-quinolinato) aluminum complex, aminoquinoline metal complex, benzoquinoline metal complex, tri- (p-terphenyl-4-yl) amine, pyran, quinacridone, rubrene, (2-thienyl) pyrrole derivative, a diesterylbenzene derivative, a styrylarylene derivative, a styrylamine derivative, and a group comprising these luminescent compounds are referred to as molecules Or a polymer or the like contained in a part of It is for. Furthermore, not only a compound derived from a fluorescent dye represented by the above compound but also a so-called phosphorescent light emitting material such as a luminescent material such as Ir complex, Os complex, Pt complex and europium complex, or a compound or a polymer having them in the molecule do. The organic layer can be formed by a conventionally known method such as a sputtering method or a vacuum deposition method. On the other hand, the organic layer may include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like in addition to the organic emission layer.
투명 도전막은, Al이나 은 등의 단체, 또는 Al이나 은 등과 다른 전극 재료를 조합하여 적층 구조로 구성된 것이 재료로서 이용된다. 전극 재료의 조합은, 알칼리 금속과 Al의 적층체, 알칼리 금속과 은의 적층체, 알칼리 금속의 할로젠화물과 Al의 적층체, 알칼리 금속의 산화물과 Al의 적층체, 알칼리 토류 금속이나 희토류 금속과 Al의 적층체, 이들 금속종과 다른 금속의 합금 등을 들 수 있다. 구체적으로는, 예를 들어, 나트륨, 나트륨-칼륨 합금, 리튬, 마그네슘 등과 Al의 적층체, 마그네슘-은 혼합물, 마그네슘-인듐 혼합물, 알루미늄-리튬 합금, LiF와 Al의 혼합물, Al과 Al2O3의 혼합물 등을 들 수 있다. 투명 도전막은, 스퍼터링법, 진공 증착법 등의 종래부터 알려져 있는 방법에 의해 형성할 수 있다.The transparent conductive film is made of a material such as Al, silver or the like, or a laminate structure formed by combining Al, silver, or the like and other electrode materials. The combination of the electrode materials may be a laminate of an alkali metal and Al, a laminate of an alkali metal and silver, a laminate of an alkali metal and a halogenated Al, a laminate of an alkali metal and an Al, an alkaline earth metal or a rare earth metal A laminate of Al, an alloy of these metal species and another metal, and the like. Concretely, for example, a laminate of Al, Al and Al 2 O, a mixture of magnesium and silver, a magnesium-indium mixture, an aluminum-lithium alloy, a mixture of LiF and Al, 3 , and the like. The transparent conductive film can be formed by a conventionally known method such as a sputtering method or a vacuum deposition method.
본원은, 2014년 3월 31일에 출원된 일본 특허출원 제2014-073359호에 기초하는 우선권의 이익을 주장하는 것이다. 2014년 3월 31일에 출원된 일본 특허 출원 제2014-073359호의 명세서의 전 내용이, 본원에 참고를 위해 원용된다.This application claims the benefit of priority based on Japanese Patent Application No. 2014-073359 filed on March 31, 2014. The entire contents of the specification of Japanese Patent Application No. 2014-073359 filed on March 31, 2014 are incorporated herein by reference.
실시예 Example
이하에 실시예를 들어 본 발명을 보다 구체적으로 설명하지만, 본 발명은, 하기 실시예에 의해 한정되는 것은 아니고, 전·후기의 취지에 적합할 수 있는 범위에서 적절히 변경하여 실시하는 것도 가능하며, 그들은 모두 본 발명의 기술적 범위에 포함된다. 또한, 실시예에서 이용한 평가 방법은, 이하와 같다.The present invention will be described in more detail with reference to the following examples, but it should be understood that the present invention is not limited to the following examples, but may be appropriately modified within the scope of the present invention, All of which are included in the technical scope of the present invention. The evaluation method used in the examples is as follows.
＜내전압(절연 내성)＞<Withstanding voltage (insulation resistance)>
후술하는 제작 방법으로 치수 50mm×50mm×0.8mm의 공시재를 제작한 후, JIS 규격 C2110-1에 준거하여, 공시재의 한쪽 면에 외경 20mm의 구형 전극을 하중 500gf로 접촉시킨 상태로, 절연 파괴 시험 장치를 이용하여, 20∼40초 정도에서 절연 파괴가 일어나는 일정 속도로 두께 방향으로 직류 전압을 인가하여, 절연 파괴를 일으켰을 때의 전압을 측정했다. 상기 전압 측정을 5회 행하여, 그 평균치를 내전압으로 했다.A specimen having dimensions of 50 mm x 50 mm x 0.8 mm was produced by the following manufacturing method, and a spherical electrode having an outer diameter of 20 mm was brought into contact with a load of 500 gf on one side of the specimen according to JIS C2110-1, Using a test apparatus, a direct current voltage was applied in a thickness direction at a constant rate at which dielectric breakdown occurred at about 20 to 40 seconds, and a voltage at the time of causing dielectric breakdown was measured. The above voltage measurement was performed five times, and the average value was set as the withstand voltage.
＜평균 표면 거칠기 Ra＞<Average surface roughness Ra>
후술하는 제작 방법으로 얻어진 공시재에 대해, 원자간력 현미경(Atomic Force Microscope, AFM)(세이코전자공업제 SPI3800N)을 이용하여, 공시재의 필름이 적층된 측의 표면에 대하여 10μm×10μm의 에리어의 임의의 3개소의 표면 거칠기를 측정하여, 그 평균치를 평균 표면 거칠기 Ra로 했다.For a specimen obtained by a manufacturing method described later, an atomic force microscope (AFM) (SPI3800N manufactured by Seiko Instruments Inc.) was used to measure the area of the area of 10 mu m x 10 mu m The surface roughness at any three points was measured, and the average value was taken as the average surface roughness Ra.
(접착제 도장 금속판 1의 제작 방법)(Method of Making Adhesive Coated Metal Plate 1)
전기 아연 도금 강판(판 두께 0.8mm)을 금속판으로 하고, 금속판의 표면에, 올레핀 수지를 주성분으로 하는 열가소성 접착제(도아합성사제 아론 멜트(등록상표) PPET(등록상표) 1505SG28) 70질량%와 메틸 에틸 케톤 30질량%를 혼합한 분산액을 야스다정밀기계제작소사제 바 코터 번수 60을 이용하여 도포하고, 도달 판온(Peak Metal Temperature: PMT)이 100℃가 되도록 2분간 소부·건조시켜, 접착제의 막 두께가 5.7μm인 접착제 도장 금속판 1을 얻었다. 접착제 도장 금속판 1의 제작 조건·물성 등을 표 1에 나타낸다.(Manufactured by Toagosei Co., Ltd.) (PPET (registered trademark) 1505SG28) having an olefin resin as a main component was coated on the surface of a metal sheet with an electroconductive galvanized steel sheet (plate thickness 0.8 mm) And 30 mass% of ethyl ketone were mixed by using Barcoater Number 60 manufactured by Yasuda Precision Machinery Co., and the resultant was baked and dried for 2 minutes so as to have a peak temperature (PMT) of 100 占 폚, The adhesive coated metal plate 1 having a thickness of 5.7 mu m was obtained. Table 1 shows manufacturing conditions and physical properties of the adhesive-coated metal plate 1.
(접착제 도장 금속판 2의 제작 방법)(Manufacturing method of adhesive-coated metal plate 2)
전기 아연 도금 강판(판 두께 0.8mm)을 금속판으로 하고, 금속판의 표면에, 폴리에스터 수지를 주성분으로 하는 열가소성 접착제(도아합성사제 아론 멜트(등록상표) PES(등록상표) 360HVXM30) 90질량%와 메틸 에틸 케톤 10질량%를 혼합한 분산액을 야스다정밀기계제작소사제 바 코터 번수 60을 이용하여 도포하고, 도달 판온(Peak Metal Temperature: PMT)이 100℃가 되도록 2분간 소부·건조시켜, 접착제의 막 두께가 12.4μm인 접착제 도장 금속판 2를 얻었다. 접착제 도장 금속판 2의 제작 조건·물성 등을 표 1에 나타낸다.90% by mass of a thermoplastic adhesive (AERONMEL (registered trademark) PES (registered trademark) PES (registered trademark) 360HVXM30) having a polyester resin as a main component was applied on the surface of a metal sheet, And 10 mass% of methyl ethyl ketone was applied by using Bar Coater Number 60 manufactured by Yasuda Precision Machinery Co., and the resultant was baked and dried for 2 minutes so that the peak temperature (PMT) Thereby obtaining an adhesive painted metal plate 2 having a thickness of 12.4 占 퐉. Table 1 shows the production conditions and physical properties of the adhesive-coated metal plate 2.
(접착제 도장 금속판 3의 제작 방법)(Method of producing adhesive-coated metal plate 3)
접착제 도장 금속판 2에 있어서, 분산액을 열가소성 접착제(도아합성사제 아론 멜트(등록상표) PES(등록상표) 360HVXM30) 50질량%와 메틸 에틸 케톤 50질량%를 혼합한 분산액으로 한 점 이외에는, 접착제 도장 금속판 2와 마찬가지로 하여 접착제의 막 두께가 7.0μm인 접착제 도장 금속판 3을 얻었다. 접착제 도장 금속판 3의 제작 조건·물성 등을 표 1에 나타낸다.Except that the dispersion was a dispersion obtained by mixing 50 mass% of a thermoplastic adhesive (Aronmelt (registered trademark) PES (registered trademark) PES (registered trademark) 360HVXM30) and 50 mass% of methyl ethyl ketone in the adhesive-coated metal plate 2, 2, an adhesive-coated metal plate 3 having an adhesive thickness of 7.0 m was obtained. Table 1 shows manufacturing conditions and physical properties of the adhesive-coated metal plate 3.
(접착제 도장 금속판 4의 제작 방법)(Method for producing adhesive-coated metal plate 4)
접착제 도장 금속판 2에 있어서, 분산액을 열가소성 접착제(도아합성사제 아론 멜트(등록상표) PES(등록상표) 360HVXM30) 70질량%와 메틸 에틸 케톤 30질량%를 혼합한 분산액으로 하고, 바 코터 번수 30을 이용한 점 이외에는, 접착제 도장 금속판 2와 마찬가지로 하여 접착제의 막 두께가 4.9μm인 접착제 도장 금속판 4를 얻었다. 접착제 도장 금속판 4의 제작 조건·물성 등을 표 1에 나타낸다.In the adhesive-coated metal plate 2, a dispersion was prepared by mixing 70% by mass of a thermoplastic adhesive (ARONMEL (registered trademark) PES (registered trademark) PES (registered trademark) 360HVXM30) and 30% by mass of methyl ethyl ketone, Except for the point at which the adhesive was applied, an adhesive painted metal plate 4 having an adhesive thickness of 4.9 m was obtained in the same manner as the adhesive metal plate 2. Table 1 shows production conditions and physical properties of the adhesive-coated metal plate 4.
(접착제 도장 금속판 5의 제작 방법)(Method for producing adhesive-coated metal plate 5)
접착제 도장 금속판 2에 있어서, 분산액을 열가소성 접착제(도아합성사제 아론 멜트(등록상표) PES(등록상표) 360HVXM30) 70질량%와 메틸 에틸 케톤 30질량%를 혼합한 분산액으로 하고, 바 코터 번수 20을 이용한 점 이외에는, 접착제 도장 금속판 2와 마찬가지로 하여 접착제의 막 두께가 3.2μm인 접착제 도장 금속판 5를 얻었다. 접착제 도장 금속판 5의 제작 조건·물성 등을 표 1에 나타낸다.In the adhesive-coated metal plate 2, the dispersion was prepared by mixing 70% by mass of a thermoplastic adhesive (ARONMEL (registered trademark) PES (registered trademark) PES (registered trademark) 360HVXM30) and 30% by mass of methyl ethyl ketone, The adhesive coated metal plate 5 having an adhesive thickness of 3.2 占 퐉 was obtained in the same manner as the adhesive coated metal plate 2 except for the point of use. Table 1 shows the production conditions, physical properties, and the like of the adhesive-coated metal plate 5.
(접착제 도장 금속판 6의 제작 방법)(Method for producing adhesive-coated metal plate 6)
접착제 도장 금속판 2에 있어서, 분산액을 열가소성 접착제(도아합성사제 아론 멜트(등록상표) PES(등록상표) 360HVXM30) 70질량%와 메틸 에틸 케톤 30질량%를 혼합한 분산액으로 하고, 바 코터 번수 10을 이용한 점 이외에는, 접착제 도장 금속판 2와 마찬가지로 하여 접착제의 막 두께가 1.6μm인 접착제 도장 금속판 6을 얻었다. 접착제 도장 금속판 6의 제작 조건·물성 등을 표 1에 나타낸다.In the adhesive-coated metal plate 2, the dispersion was prepared by mixing 70% by mass of a thermoplastic adhesive (ARONMEL (registered trademark) PES (registered trademark) PES (registered trademark) 360HVXM30) and 30% by mass of methyl ethyl ketone, The adhesive coated metal plate 6 having a thickness of the adhesive of 1.6 m was obtained in the same manner as in the case of the adhesive coated metal plate 2. [ Table 1 shows the production conditions and physical properties of the adhesive-coated metal plate 6.
(실시예 1)(Example 1)
접착제 도장 금속판 1의 접착제 도포면 상에 25μm의 PET 필름 1(유니티카사제 엠브레트(등록상표) P652: 표면 거칠기 Ra 20nm)을 놓고, 온도 180℃, 압력 10kgf/cm2의 조건하, 1분간 가압 접착하는 것에 의해, 접착제 도장 금속판 1과 PET 필름을 접착시켜 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.A 25 μm PET film 1 (Ambret (registered trademark) P652: surface roughness Ra of 20 nm) was placed on the adhesive-coated surface of the adhesive-coated metal plate 1 and heated at 180 ° C. under a pressure of 10 kgf / cm 2 for 1 minute And the adhesive paint coated metal plate 1 and the PET film were adhered to each other by pressure bonding to obtain a metal substrate. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(실시예 2)(Example 2)
실시예 1에 있어서, 접착제 도장 금속판 1 대신에 접착제 도장 금속판 2를 이용한 것 이외에는, 실시예 1과 마찬가지로 하여 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.A metal substrate was obtained in the same manner as in Example 1, except that the adhesive-coated metal plate 2 was used in place of the adhesive coated metal plate 1 in Example 1. [ Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(실시예 3)(Example 3)
접착제 도장 금속판 1의 접착제 도포면 상에 100μm의 PEN 필름(데이진듀퐁필름사제 테오넥스(등록상표) Q65FA: 표면 거칠기 Ra 1.2nm)을 놓고, 온도 180℃, 압력 50kgf/cm2의 조건하, 1분간 가압 접착하는 것에 의해, 접착제 도장 금속판 1과 상기 PEN 필름을 접착시켜 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.Adhesive coated metal sheet 1, the adhesive coated surface a PEN film of 100μm in: Place (Teijin DuPont Film Co. Theo Nex (R) Q65FA surface roughness Ra 1.2nm), 180 ℃ temperature, and pressure conditions of 50kgf / cm 2, 1 Minute adhesive bonding, the adhesive coated metal plate 1 and the PEN film were adhered to each other to obtain a metal substrate. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(실시예 4)(Example 4)
실시예 3에 있어서, 접착제 도장 금속판 1 대신에 접착제 도장 금속판 2를 이용한 것 이외에는, 실시예 3과 마찬가지로 하여 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.A metal substrate was obtained in the same manner as in Example 3 except that the adhesive coated metal plate 2 was used in place of the adhesive coated metal plate 1 in Example 3. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(실시예 5)(Example 5)
접착제 도장 금속판 3의 접착제 도포면 상에 100μm의 상기 PEN 필름(Q65FA)을 놓고, 온도 100℃, 압력 1kgf/cm2의 조건하, 1분간 가압 접착하는 것에 의해, 접착제 도장 금속판 3과 상기 PEN 필름을 접착시켜 금속 기판을 얻었다. 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.Place the PEN film (Q65FA) of 100μm on the adhesive coated surface of the adhesive coated metal sheet 3, temperature 100 ℃, by the pressure conditions, the pressure 1 minutes of 1kgf / cm 2 adhesive, the adhesive coated metal sheet 3 and the PEN film To obtain a metal substrate. Table 2 shows the physical properties and evaluation results of the obtained metal substrate.
(실시예 6·7)(Example 6.7)
실시예 5에 있어서, 가압 접착 시의 온도를 120℃, 140℃로 한 점 이외에는, 실시예 5와 마찬가지로 하여 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.A metal substrate was obtained in the same manner as in Example 5, except that the temperature at the time of pressure bonding in Example 5 was changed to 120 占 폚 and 140 占 폚. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(실시예 8∼16)(Examples 8 to 16)
표 2에 기재된 바와 같이, 실시예 5에 있어서, 접착제 도장 금속판, 가압 접착 시의 온도의 적어도 한쪽을 변경한 것 이외에는, 실시예 5와 마찬가지로 하여 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.As shown in Table 2, a metal substrate was obtained in the same manner as in Example 5 except that at least one of the adhesive painted metal plate and the pressure bonding temperature was changed. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(실시예 17∼19)(Examples 17 to 19)
실시예 4에 있어서, 가압 접착 시의 온도를 100℃, 120℃, 140℃로 하고, 가압 접착 시의 압력을 1kgf/cm2로 한 점 이외에는, 실시예 4와 마찬가지로 하여 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.Example 4 In, 100 ℃ the temperature at the time of pressure bonding, 120 ℃, to 140 ℃, and except that the pressure at the time of pressing the adhesive to 1kgf / cm 2, similarly to obtain a metal substrate as in Example 4. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(비교예 1)(Comparative Example 1)
실시예 1에 있어서, 25μm의 PET 필름 1 대신에 50μm의 PET 필름 2(유니티카사제 E5101: 표면 거칠기 Ra 50nm)를 이용한 점 이외에는, 실시예 1과 마찬가지로 하여 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.A metal substrate was obtained in the same manner as in Example 1, except that 50 占 퐉 of PET film 2 (E5101: surface roughness Ra of 50 nm) was used instead of 25 占 퐉 PET film 1 in Example 1. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
(비교예 2)(Comparative Example 2)
실시예 2에 있어서, 25μm의 PET 필름 1 대신에 50μm의 PET 필름 2(E5101)를 이용한 점 이외에는, 실시예 2와 마찬가지로 하여 금속 기판을 얻었다. 금속 기판의 제작 조건, 얻어진 금속 기판의 물성, 평가 결과를 표 2에 나타낸다.A metal substrate was obtained in the same manner as in Example 2 except that 50 占 퐉 of PET film 2 (E5101) was used instead of 25 占 퐉 of PET film 1 in Example 2. Table 2 shows the production conditions of the metal substrate, the physical properties of the obtained metal substrate, and the evaluation results.
금속판에 소정의 피막을 적층하는 것에 의해, 피막의 표면을 평활하게 함과 함께, 피막이 절연성을 갖는 금속 기판이 되어, 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용하는 것이 가능해진다.By laminating a predetermined film on the metal plate, the surface of the film is smoothed, and the film becomes a metal substrate having an insulating property, so that it can be used in a substrate thin film solar cell or a top-emission type organic EL device.
Claims (3)
상기 필름은, 고체 안료의 체적분율이 20% 이하인 조성물로부터 얻어진 것이며, 막 두께가 12μm 이상 250μm 이하, 적층 후의 상기 필름 표면의 표면 거칠기 Ra가 30nm 이하인
것을 특징으로 하는 서브스트레이트형 박막 태양 전지 또는 탑 에미션형 유기 EL 소자에 이용되는 금속 기판.A thermoplastic resin film of one layer is laminated on the surface of the metal plate through an adhesive,
The film is obtained from a composition in which the volume fraction of the solid pigment is 20% or less, and has a film thickness of 12 占 퐉 or more and 250 占 퐉 or less, a surface roughness Ra of the film surface after lamination of 30 nm or less
Wherein the organic thin film solar cell or the top emission organic EL device is a metal substrate for use in a substrate thin film solar cell or a top emission type organic EL device.
상기 열가소성 수지는 폴리에스터 수지인 금속 기판.The method according to claim 1,
Wherein the thermoplastic resin is a polyester resin.
상기 적층 후의 필름의 표면 거칠기 Ra는 10nm 이하인 금속 기판.3. The method according to claim 1 or 2,
Wherein the surface roughness Ra of the film after lamination is 10 nm or less.
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| Application Number | Priority Date | Filing Date | Title |
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| JPJP-P-2014-073359 | 2014-03-31 | ||
| JP2014073359A JP6510760B2 (en) | 2014-03-31 | 2014-03-31 | Metal substrate |
| PCT/JP2015/057684 WO2015151773A1 (en) | 2014-03-31 | 2015-03-16 | Metal substrate |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1020167027058A Division KR20160129870A (en) | 2014-03-31 | 2015-03-16 | Metal substrate |
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| KR1020167027058A KR20160129870A (en) | 2014-03-31 | 2015-03-16 | Metal substrate |
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| KR (2) | KR20180135122A (en) |
| CN (1) | CN106165112B (en) |
| MY (1) | MY181305A (en) |
| TW (1) | TWI598464B (en) |
| WO (1) | WO2015151773A1 (en) |
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| MX2016016480A (en) | 2014-07-02 | 2017-08-02 | Inflectis Bioscience | Novel therapeutic uses of benzylideneguanidine derivatives for the treatment of proteopathies. |
| JP5946578B1 (en) * | 2015-12-09 | 2016-07-06 | 尾池工業株式会社 | Method for producing surface smooth laminate |
| JP6742268B2 (en) * | 2017-03-31 | 2020-08-19 | 富士フイルム株式会社 | Thermoplastic resin film manufacturing method, conductive film manufacturing method, thermoplastic resin film, and conductive film |
| EP3904075A4 (en) * | 2018-12-28 | 2022-02-09 | JFE Steel Corporation | Film laminate metal sheet, substrate for flexible devices, and substrate for organic el devices |
| CN112877592B (en) * | 2019-11-29 | 2022-06-28 | 宝山钢铁股份有限公司 | Hot-formed part with excellent paint film adhesion and manufacturing method thereof |
| CN117042958A (en) | 2021-03-23 | 2023-11-10 | 杰富意钢铁株式会社 | Film-laminated metal plate, method for producing same, substrate for flexible electronic device, and substrate for organic EL |
| WO2024075738A1 (en) * | 2022-10-03 | 2024-04-11 | 東洋紡株式会社 | Long laminate, photovoltaic device, and method for producing photovoltaic device |
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| JPH1110724A (en) | 1997-06-25 | 1999-01-19 | Toray Ind Inc | Polyester film for laminating metal plate |
| JP2002025763A (en) * | 2000-07-11 | 2002-01-25 | Nisshin Steel Co Ltd | Insulating board for organic el element |
| JP3942017B2 (en) * | 2002-03-25 | 2007-07-11 | 富士フイルム株式会社 | Light emitting element |
| JP2011222779A (en) * | 2010-04-09 | 2011-11-04 | Dainippon Printing Co Ltd | Method of manufacturing substrate for thin film element, method of manufacturing thin film element, method for thin film transistor |
| JP2011108883A (en) * | 2009-11-18 | 2011-06-02 | Mitsubishi Chemicals Corp | Solar cell |
| WO2011098544A1 (en) * | 2010-02-10 | 2011-08-18 | Tata Steel Nederland Technology Bv | Layered system for producing a solar cell on a metal substrate, method for producing said layered system |
| CN101805578B (en) * | 2010-03-19 | 2012-07-25 | 苏州赛伍应用技术有限公司 | Back protection film of solar cell |
| WO2012048888A1 (en) * | 2010-10-14 | 2012-04-19 | Tata Steel Nederland Technology B.V. | Preparation of a polyetherimide intermediate and its application on metal substrates |
| JP2012146413A (en) | 2011-01-07 | 2012-08-02 | Teijin Dupont Films Japan Ltd | Polyester film for organic electroluminescent illumination substrate |
| JP5853567B2 (en) * | 2011-10-11 | 2016-02-09 | 日新製鋼株式会社 | ORGANIC EL ELEMENT SUBSTRATE, ITS MANUFACTURING METHOD, AND ORGANIC EL ELEMENT |
| KR101821872B1 (en) * | 2013-03-28 | 2018-01-24 | 가부시키가이샤 고베 세이코쇼 | Metal board, and substrate-type thin-film solar cell and top-emission-type organic el element using same |
| CN103522658B (en) * | 2013-09-18 | 2017-02-15 | 东莞市安派电子有限公司 | Backboard for metal perforation type solar battery and preparation method of backboard |
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| WO2015151773A1 (en) | 2015-10-08 |
| KR20160129870A (en) | 2016-11-09 |
| CN106165112A (en) | 2016-11-23 |
| CN106165112B (en) | 2019-05-10 |
| JP6510760B2 (en) | 2019-05-08 |
| JP2015195315A (en) | 2015-11-05 |
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