JP6499400B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6499400B2
JP6499400B2 JP2014078231A JP2014078231A JP6499400B2 JP 6499400 B2 JP6499400 B2 JP 6499400B2 JP 2014078231 A JP2014078231 A JP 2014078231A JP 2014078231 A JP2014078231 A JP 2014078231A JP 6499400 B2 JP6499400 B2 JP 6499400B2
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Prior art keywords
hole
insulating
forming
layer
insulating member
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JP2014078231A
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English (en)
Japanese (ja)
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JP2015201493A5 (https=
JP2015201493A (ja
Inventor
悠也 安藤
悠也 安藤
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Canon Inc
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Canon Inc
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Priority to JP2014078231A priority Critical patent/JP6499400B2/ja
Priority to US14/666,820 priority patent/US9305960B2/en
Publication of JP2015201493A publication Critical patent/JP2015201493A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2014078231A 2014-04-04 2014-04-04 半導体装置の製造方法 Expired - Fee Related JP6499400B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014078231A JP6499400B2 (ja) 2014-04-04 2014-04-04 半導体装置の製造方法
US14/666,820 US9305960B2 (en) 2014-04-04 2015-03-24 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014078231A JP6499400B2 (ja) 2014-04-04 2014-04-04 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2015201493A JP2015201493A (ja) 2015-11-12
JP2015201493A5 JP2015201493A5 (https=) 2017-03-30
JP6499400B2 true JP6499400B2 (ja) 2019-04-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014078231A Expired - Fee Related JP6499400B2 (ja) 2014-04-04 2014-04-04 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US9305960B2 (https=)
JP (1) JP6499400B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102355049B1 (ko) * 2017-01-12 2022-01-25 엔크리스 세미컨덕터, 아이엔씨. 반도체 소자 및 그 제조 방법
US10535698B2 (en) * 2017-11-28 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with pad structure

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005026405A (ja) 2003-07-01 2005-01-27 Sharp Corp 貫通電極構造およびその製造方法、半導体チップならびにマルチチップ半導体装置
JP2005243689A (ja) * 2004-02-24 2005-09-08 Canon Inc 半導体チップの製造方法および半導体装置
JP4365750B2 (ja) * 2004-08-20 2009-11-18 ローム株式会社 半導体チップの製造方法、および半導体装置の製造方法
JP4795677B2 (ja) 2004-12-02 2011-10-19 ルネサスエレクトロニクス株式会社 半導体装置およびそれを用いた半導体モジュール、ならびに半導体装置の製造方法
JP5355863B2 (ja) * 2007-04-17 2013-11-27 アプライド マテリアルズ インコーポレイテッド 三次元半導体デバイスの製造方法、基板生産物の製造方法、基板生産物、及び三次元半導体デバイス
JP2010056227A (ja) * 2008-08-27 2010-03-11 Toshiba Corp 半導体装置及び半導体装置の製造方法
JP5101575B2 (ja) * 2009-07-28 2012-12-19 株式会社東芝 半導体装置およびその製造方法
JP2012119381A (ja) * 2010-11-29 2012-06-21 Toshiba Corp 半導体装置および半導体装置の製造方法
JP2012195514A (ja) * 2011-03-17 2012-10-11 Seiko Epson Corp 素子付き基板、赤外線センサー、および貫通電極形成方法
JP2012222141A (ja) * 2011-04-08 2012-11-12 Elpida Memory Inc 半導体チップ
JP5229354B2 (ja) 2011-06-13 2013-07-03 ソニー株式会社 固体撮像装置
JP5802515B2 (ja) * 2011-10-19 2015-10-28 株式会社東芝 半導体装置及びその製造方法
JP2014003081A (ja) * 2012-06-15 2014-01-09 Ps4 Luxco S A R L 半導体装置及びその製造方法
US9076759B2 (en) * 2013-01-10 2015-07-07 United Microelectronics Corp. Semiconductor device and manufacturing method of the same

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Publication number Publication date
US9305960B2 (en) 2016-04-05
JP2015201493A (ja) 2015-11-12
US20150287758A1 (en) 2015-10-08

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