JP6494604B2 - 高周波アプリケータを有する回転可能な基板支持体 - Google Patents

高周波アプリケータを有する回転可能な基板支持体 Download PDF

Info

Publication number
JP6494604B2
JP6494604B2 JP2016517530A JP2016517530A JP6494604B2 JP 6494604 B2 JP6494604 B2 JP 6494604B2 JP 2016517530 A JP2016517530 A JP 2016517530A JP 2016517530 A JP2016517530 A JP 2016517530A JP 6494604 B2 JP6494604 B2 JP 6494604B2
Authority
JP
Japan
Prior art keywords
shaft
rotatable
substrate support
assembly
support assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2016517530A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017502489A (ja
Inventor
小林　理
理 小林
カービィ エイチ． フロイド，
カービィ エイチ． フロイド，
広二 塙
広二 塙
スナム パク，
スナム パク，
ドミトリー ルボミルスキー，
ドミトリー ルボミルスキー，
ジェーソン エー． ケニー，
ジェーソン エー． ケニー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2017502489A publication Critical patent/JP2017502489A/ja
Application granted granted Critical
Publication of JP6494604B2 publication Critical patent/JP6494604B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02K—DYNAMO-ELECTRIC MACHINES
    • H02K7/00—Arrangements for handling mechanical energy structurally associated with dynamo-electric machines, e.g. structural association with mechanical driving motors or auxiliary dynamo-electric machines
    • H02K7/14—Structural association with mechanical loads, e.g. with hand-held machine tools or fans
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016517530A 2013-09-26 2014-09-09 高周波アプリケータを有する回転可能な基板支持体 Expired - Fee Related JP6494604B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361882942P 2013-09-26 2013-09-26
US61/882,942 2013-09-26
US14/091,057 US20150083042A1 (en) 2013-09-26 2013-11-26 Rotatable substrate support having radio frequency applicator
US14/091,057 2013-11-26
PCT/US2014/054767 WO2015047722A1 (en) 2013-09-26 2014-09-09 Rotatable substrate support having radio frequency applicator

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018024889A Division JP6526854B6 (ja) 2013-09-26 2018-02-15 高周波アプリケータを有する回転可能な基板支持体

Publications (2)

Publication Number Publication Date
JP2017502489A JP2017502489A (ja) 2017-01-19
JP6494604B2 true JP6494604B2 (ja) 2019-04-03

Family

ID=52689822

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2016517530A Expired - Fee Related JP6494604B2 (ja) 2013-09-26 2014-09-09 高周波アプリケータを有する回転可能な基板支持体
JP2018024889A Expired - Fee Related JP6526854B6 (ja) 2013-09-26 2018-02-15 高周波アプリケータを有する回転可能な基板支持体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2018024889A Expired - Fee Related JP6526854B6 (ja) 2013-09-26 2018-02-15 高周波アプリケータを有する回転可能な基板支持体

Country Status (6)

Country Link
US (2) US20150083042A1 (zh)
JP (2) JP6494604B2 (zh)
KR (2) KR20160062109A (zh)
CN (2) CN108109897B (zh)
TW (2) TWI631655B (zh)
WO (1) WO2015047722A1 (zh)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI717610B (zh) * 2013-08-16 2021-02-01 美商應用材料股份有限公司 用於高溫低壓環境中的延長的電容性耦合的電漿源
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US20160225652A1 (en) * 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10177024B2 (en) * 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
JP5951095B1 (ja) * 2015-09-08 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
TWI725067B (zh) * 2015-10-28 2021-04-21 美商應用材料股份有限公司 可旋轉靜電夾盤
SG11201808871RA (en) * 2016-04-21 2018-11-29 Mimasu Semiconductor Industry Co Ltd Contactless electric power supply mechanism and method for rotary table, and wafer rotating and holding device
US10854432B2 (en) 2016-06-07 2020-12-01 Applied Materials, Inc. Rotary plasma electrical feedthrough
JP2017228597A (ja) * 2016-06-20 2017-12-28 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 成膜装置
US11495932B2 (en) * 2017-06-09 2022-11-08 Applied Materials, Inc. Slip ring for use in rotatable substrate support
US10704142B2 (en) * 2017-07-27 2020-07-07 Applied Materials, Inc. Quick disconnect resistance temperature detector assembly for rotating pedestal
US20190115246A1 (en) * 2017-10-16 2019-04-18 Applied Materials, Inc. Methods and apparatus for shielding substrate supports
US11236422B2 (en) 2017-11-17 2022-02-01 Lam Research Corporation Multi zone substrate support for ALD film property correction and tunability
US11149345B2 (en) * 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
CN112368415B (zh) 2018-07-05 2024-03-22 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US10872747B2 (en) * 2018-08-08 2020-12-22 Lam Research Corporation Controlling showerhead heating via resistive thermal measurements
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
JP2020167288A (ja) * 2019-03-29 2020-10-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置のメンテナンス方法
JP7464692B2 (ja) * 2019-07-26 2024-04-09 アプライド マテリアルズ インコーポレイテッド 基板上にフィルムを形成するための蒸発器チャンバ
CN110277298A (zh) * 2019-07-26 2019-09-24 江苏鲁汶仪器有限公司 一种射频旋转接头及设置有射频旋转接头的离子刻蚀系统
CN113709959A (zh) * 2020-05-22 2021-11-26 江苏鲁汶仪器有限公司 一种防击穿离子源放电装置
US11373845B2 (en) 2020-06-05 2022-06-28 Applied Materials, Inc. Methods and apparatus for symmetrical hollow cathode electrode and discharge mode for remote plasma processes
KR20220059742A (ko) * 2020-11-03 2022-05-10 삼성전자주식회사 온도 조절 부재를 포함하는 반도체 공정 설비
WO2023107463A1 (en) * 2021-12-10 2023-06-15 Lam Research Corporation Manifold for supplying coolant to components of substrate processing systems
US20230380016A1 (en) * 2022-05-17 2023-11-23 Applied Materials, Inc. High-temperature substrate support assembly with failure protection
CN118016497A (zh) * 2022-11-09 2024-05-10 北京北方华创微电子装备有限公司 晶圆承载装置及半导体工艺设备

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05198390A (ja) * 1992-01-22 1993-08-06 Jeol Ltd 高周波プラズマ装置
JPH08162288A (ja) * 1994-12-08 1996-06-21 Jeol Ltd 高周波プラズマ装置
JP4450883B2 (ja) * 1999-03-30 2010-04-14 東京エレクトロン株式会社 プラズマ処理装置
JP2002110555A (ja) * 2000-09-28 2002-04-12 Hitachi Kokusai Electric Inc プラズマｃｖｄ装置および薄膜の製造方法
US6689221B2 (en) * 2000-12-04 2004-02-10 Applied Materials, Inc. Cooling gas delivery system for a rotatable semiconductor substrate support assembly
WO2003018867A1 (en) * 2001-08-29 2003-03-06 Applied Materials, Inc. Semiconductor processing using an efficiently coupled gas source
US6666928B2 (en) * 2001-09-13 2003-12-23 Micell Technologies, Inc. Methods and apparatus for holding a substrate in a pressure chamber
KR100752800B1 (ko) * 2003-03-12 2007-08-29 동경 엘렉트론 주식회사 반도체처리용의 기판유지구조 및 플라즈마 처리장치
JP4219734B2 (ja) * 2003-05-19 2009-02-04 東京エレクトロン株式会社 基板保持機構およびプラズマ処理装置
US20050230350A1 (en) * 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
US7386159B2 (en) 2004-06-18 2008-06-10 Xerox Corporation Magnetic watermark for text documents
JP2006302888A (ja) * 2005-04-19 2006-11-02 Ngk Insulators Ltd 給電部材及び加熱装置
JP2007335709A (ja) * 2006-06-16 2007-12-27 Dainippon Screen Mfg Co Ltd 基板処理装置
JP5204673B2 (ja) * 2009-01-14 2013-06-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布の制御方法
KR20110008537A (ko) * 2009-07-20 2011-01-27 세메스 주식회사 원격 플라즈마 소스를 구비한 유기금속 화학 기상 증착 장치
US8742665B2 (en) * 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US9123762B2 (en) * 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
JP5368514B2 (ja) 2011-06-30 2013-12-18 東京エレクトロン株式会社 プラズマ処理装置
JP2013042061A (ja) * 2011-08-19 2013-02-28 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP6011417B2 (ja) * 2012-06-15 2016-10-19 東京エレクトロン株式会社 成膜装置、基板処理装置及び成膜方法

Also Published As

Publication number Publication date
JP2018113452A (ja) 2018-07-19
WO2015047722A1 (en) 2015-04-02
JP6526854B6 (ja) 2019-06-26
US20150083042A1 (en) 2015-03-26
JP6526854B2 (ja) 2019-06-05
US10460915B2 (en) 2019-10-29
KR20180015762A (ko) 2018-02-13
US20170236693A1 (en) 2017-08-17
KR20160062109A (ko) 2016-06-01
CN105580128B (zh) 2019-05-21
CN108109897B (zh) 2020-03-13
TW201830574A (zh) 2018-08-16
TW201521150A (zh) 2015-06-01
TWI631655B (zh) 2018-08-01
TWI661511B (zh) 2019-06-01
JP2017502489A (ja) 2017-01-19
CN105580128A (zh) 2016-05-11
CN108109897A (zh) 2018-06-01

Similar Documents

Publication Publication Date Title
JP6526854B2 (ja) 高周波アプリケータを有する回転可能な基板支持体
US11450509B2 (en) Inductive plasma source with metallic shower head using b-field concentrator
JP6330087B2 (ja) 対称給電構造を有する基板サポート
TWI544837B (zh) 電漿源的設計
US5683537A (en) Plasma processing apparatus
TWI621172B (zh) 電漿處理裝置
US20100243620A1 (en) Plasma processing apparatus
JP7064895B2 (ja) プラズマ処理装置
KR102586592B1 (ko) 고온 rf 가열기 페디스털들
KR20170140926A (ko) 정전척 어셈블리 및 이를 구비하는 플라즈마 처리장치
KR100726528B1 (ko) 기판 처리챔버용 안테나 코일 조립체
JP3814176B2 (ja) プラズマ処理装置
TWI715938B (zh) 用於半導體處理腔室的磁感應電漿系統及其使用方法
KR101232198B1 (ko) 플라스마 발생 유닛 및 이를 포함하는 기판 처리 장치 및 방법
JP5987862B2 (ja) 半導体装置
KR101513255B1 (ko) 플라즈마 장치
JP2010010154A (ja) チャンバー部品を介してプロセス流体を導入する方法及びシステム
KR102384274B1 (ko) 냉각구조를 개선한 플라즈마 반응기
TWI394200B (zh) 經由腔室構件導入處理流體的方法與系統

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170907

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180419

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180424

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180724

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180921

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190205

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190305

R150 Certificate of patent or registration of utility model

Ref document number: 6494604

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees