JP6489289B2 - レジスト形成用感光性樹脂組成物、樹脂膜、硬化膜、および半導体装置 - Google Patents

レジスト形成用感光性樹脂組成物、樹脂膜、硬化膜、および半導体装置 Download PDF

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JP6489289B2
JP6489289B2 JP2018527247A JP2018527247A JP6489289B2 JP 6489289 B2 JP6489289 B2 JP 6489289B2 JP 2018527247 A JP2018527247 A JP 2018527247A JP 2018527247 A JP2018527247 A JP 2018527247A JP 6489289 B2 JP6489289 B2 JP 6489289B2
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group
compound
resin composition
photosensitive resin
film
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JPWO2018088469A1 (ja
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裕馬 田中
裕馬 田中
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
JP2018527247A 2016-11-11 2017-11-09 レジスト形成用感光性樹脂組成物、樹脂膜、硬化膜、および半導体装置 Active JP6489289B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016220584 2016-11-11
JP2016220584 2016-11-11
PCT/JP2017/040412 WO2018088469A1 (ja) 2016-11-11 2017-11-09 感光性樹脂組成物、樹脂膜、硬化膜、半導体装置の製造方法、および半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2018241861A Division JP2019070832A (ja) 2016-11-11 2018-12-25 半導体装置の製造方法

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JPWO2018088469A1 JPWO2018088469A1 (ja) 2018-11-15
JP6489289B2 true JP6489289B2 (ja) 2019-03-27

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JP2018527247A Active JP6489289B2 (ja) 2016-11-11 2017-11-09 レジスト形成用感光性樹脂組成物、樹脂膜、硬化膜、および半導体装置
JP2018241861A Withdrawn JP2019070832A (ja) 2016-11-11 2018-12-25 半導体装置の製造方法
JP2020122881A Active JP7111129B2 (ja) 2016-11-11 2020-07-17 半導体装置の製造方法

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JP2020122881A Active JP7111129B2 (ja) 2016-11-11 2020-07-17 半導体装置の製造方法

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JP (3) JP6489289B2 (zh)
KR (1) KR102004129B1 (zh)
CN (2) CN115718406A (zh)
TW (1) TWI765933B (zh)
WO (1) WO2018088469A1 (zh)

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JP7340329B2 (ja) * 2018-12-17 2023-09-07 旭化成株式会社 感光性樹脂積層体及びレジストパターンの製造方法
JP2022523709A (ja) 2019-01-29 2022-04-26 ラム リサーチ コーポレーション 基板の環境に敏感な表面のための犠牲保護層
KR20230013084A (ko) * 2020-05-29 2023-01-26 스미또모 베이크라이트 가부시키가이샤 감광성 수지 조성물
KR20240110932A (ko) * 2021-11-26 2024-07-16 도레이 카부시키가이샤 감광성 수지 조성물, 경화물, 유기 el 표시 장치, 반도체 장치 및 경화물의 제조 방법
WO2023182136A1 (ja) * 2022-03-24 2023-09-28 住友ベークライト株式会社 ポジ型感光性樹脂組成物、硬化膜、および半導体装置
CN114957575A (zh) * 2022-04-22 2022-08-30 上海极紫科技有限公司 改性酚醛树脂、其制备方法和正性光刻胶
WO2024081174A1 (en) * 2022-10-10 2024-04-18 Lam Research Corporation Oxymethylene copolymers for transient surface protection during chemical vapor deposition

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JP3575095B2 (ja) * 1994-12-28 2004-10-06 Ｊｓｒ株式会社 感放射線性樹脂組成物およびそれから形成された光デバイス用保護膜
DE60030479T2 (de) * 1999-12-27 2006-12-21 Sumitomo Bakelite Co. Ltd. Lötmittel, lötwiderstand, halbleitergehäuse verstärkt durch lötmittel, halbleiterbauelement und herstellungsverfahren für halbleitergehäuse und halbleiterbauelement
EP1852451A1 (en) * 2005-02-25 2007-11-07 Nippon Kayaku Kabushiki Kaisha Epoxy resin, hardenable resin composition containing the same and use thereof
JP4858714B2 (ja) * 2006-10-04 2012-01-18 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP5377020B2 (ja) * 2009-03-23 2013-12-25 太陽ホールディングス株式会社 光硬化性熱硬化性樹脂組成物、そのドライフィルム及び硬化物並びにそれらを用いたプリント配線板
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US9746768B2 (en) * 2013-01-24 2017-08-29 Nissan Chemical Industries, Ltd. Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same
JP6159548B2 (ja) 2013-03-27 2017-07-05 新日鉄住金化学株式会社 エポキシ樹脂組成物、樹脂シート及びエポキシ樹脂硬化物
JP5981465B2 (ja) * 2014-01-10 2016-08-31 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
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CN107533290B (zh) 2015-03-30 2021-04-09 三菱瓦斯化学株式会社 抗蚀基材、抗蚀剂组合物及抗蚀图案形成方法
JP6605828B2 (ja) 2015-03-30 2019-11-13 日鉄ケミカル＆マテリアル株式会社 多価ヒドロキシ樹脂、エポキシ樹脂、それらの製造方法、エポキシ樹脂組成物及びその硬化物
KR102024614B1 (ko) * 2015-03-31 2019-09-24 후지필름 가부시키가이샤 패턴 형성 방법, 포토마스크의 제조 방법 및 전자 디바이스의 제조 방법
WO2017069063A1 (ja) * 2015-10-19 2017-04-27 日産化学工業株式会社 長鎖アルキル基含有ノボラックを含むレジスト下層膜形成組成物

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Publication number Publication date
CN115718406A (zh) 2023-02-28
KR102004129B1 (ko) 2019-07-25
TWI765933B (zh) 2022-06-01
JP2019070832A (ja) 2019-05-09
CN109791356A (zh) 2019-05-21
JP7111129B2 (ja) 2022-08-02
KR20190034680A (ko) 2019-04-02
WO2018088469A1 (ja) 2018-05-17
JP2020187368A (ja) 2020-11-19
TW201830138A (zh) 2018-08-16
JPWO2018088469A1 (ja) 2018-11-15

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