JP6487915B2 - プロセスリング上の希土類酸化物系薄膜コーティング用イオンアシスト蒸着 - Google Patents
プロセスリング上の希土類酸化物系薄膜コーティング用イオンアシスト蒸着 Download PDFInfo
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0026—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0031—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/08—Targets (anodes) and X-ray converters
- H01J2235/085—Target treatment, e.g. ageing, heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3142—Ion plating
- H01J2237/3146—Ion beam bombardment sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/18—Luminescent screens
- H01J2329/28—Luminescent screens with protective, conductive or reflective layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
- Y10T428/1317—Multilayer [continuous layer]
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- Analytical Chemistry (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims (12)
- エッチングリアクタ用のチャンバコンポーネントであって、
酸化物系セラミックス、窒化物系セラミックス、又は炭化物系セラミックスのうちの少なくとも1つを含むリング状本体と、
リング状本体の少なくとも1つの表面上の保護層であって、保護層は、300μm未満厚さを有する耐プラズマ性希土類酸化物膜であり、6マイクロインチ未満の平均表面粗さを有し、Y 2 O 3 、ZrO 2 、Er 2 O 3 、Gd 2 O 3 、及びSiO 2 の組み合わせを含むチャンバコンポーネント。 - 保護層は、Y3Al5O12、Y4Al2O9、Er2O3、Gd2O3、Er3Al5O12、Gd3Al5O12、YF3、Nd2O3、Er4Al2O9、ErAlO3、Gd4Al2O9、GdAlO3、Nd3Al5O12、Nd4Al2O9、NdAlO3、又はY4Al2O9とY2O3−ZrO2の固溶体とを含むセラミックス化合物のうちの少なくとも1つを含む、請求項1記載のチャンバコンポーネント。
- 保護層は、5〜15μmの厚さを有する、請求項1記載のチャンバコンポーネント。
- 保護層は、Y2O3が40〜45モル%、ZrO2が5〜10モル%、Er2O3が35〜40モル%、Gd2O3が5〜10モル%、及びSiO2が5〜15モル%の組成を有する、請求項1記載のチャンバコンポーネント。
- 保護層の空孔率は1%以下である、請求項1記載のチャンバコンポーネント。
- エッチングリアクタ用のチャンバコンポーネントであって、
酸化物系セラミックス、窒化物系セラミックス、又は炭化物系セラミックスのうちの少なくとも1つを含むリング状本体と、
リング状本体の少なくとも1つの表面上の保護層であって、保護層は、300μm未満厚さを有する耐プラズマ性希土類酸化物膜であり、6マイクロインチ未満の平均表面粗さを有し、
保護層は、少なくとも1つの表面上に第1の耐プラズマ性の希土類酸化物膜と、第1の耐プラズマ性の希土類酸化物膜上に第2の耐プラズマ性の希土類酸化物膜とを含む保護層スタックを含み、
第1の耐プラズマ性の希土類酸化物膜は、第1の耐プラズマ性の希土類酸化物膜に第2の耐プラズマ性の希土類酸化物膜とは異なる色を持たせる着色剤を含むチャンバコンポーネント。 - 着色剤は、Nd2O3、Sm2O3、又はEr2O3のうちの少なくとも1つを含む、請求項6記載のチャンバコンポーネント。
- リング状本体を提供する工程と、
リング状本体の少なくとも1つの表面上に保護層を堆積させるために、イオンアシスト蒸着を実行する工程であって、保護層は、300μm未満の厚さを有する耐プラズマ性の希土類酸化物膜である工程と、
6マイクロインチ以下の平均表面粗さまでリングを火炎研磨する工程とを含み、
保護層は、Y 2 O 3 、ZrO 2 、Er 2 O 3 、Gd 2 O 3 、及びSiO 2 の組み合わせを含む物品の製造方法。 - 2〜3マイクロインチの粗さまで保護層を研磨するために火炎研磨を実行する工程を含む、請求項8記載の方法。
- 保護層は10〜12ミクロンの厚さを有し、毎秒1〜2オングストロームの堆積速度が、保護層を堆積させるために使用される、請求項8記載の方法。
- イオンアシスト蒸着を実行する前に、少なくとも150℃の温度までリング状本体を加熱する工程と、
イオンアシスト蒸着の間、温度を維持する工程を含む、請求項8記載の方法。 - 第1の保護層上に第2の保護層を堆積させるために、イオンアシスト蒸着を実行する工程であって、第2の保護層は、5〜15μmの厚さを有する追加の耐プラズマ性の希土類酸化物膜である工程を含む、請求項8記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201361856597P | 2013-07-19 | 2013-07-19 | |
US61/856,597 | 2013-07-19 | ||
US14/032,098 US9711334B2 (en) | 2013-07-19 | 2013-09-19 | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
US14/032,098 | 2013-09-19 | ||
PCT/US2014/046734 WO2015009745A1 (en) | 2013-07-19 | 2014-07-15 | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
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US (3) | US9711334B2 (ja) |
JP (2) | JP6487915B2 (ja) |
KR (2) | KR102175683B1 (ja) |
CN (3) | CN109308988A (ja) |
TW (3) | TWI625809B (ja) |
WO (1) | WO2015009745A1 (ja) |
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CN109308988A (zh) | 2019-02-05 |
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JP2018078309A (ja) | 2018-05-17 |
US20180096825A1 (en) | 2018-04-05 |
TW201519351A (zh) | 2015-05-16 |
CN107978507B (zh) | 2019-12-06 |
KR102175683B1 (ko) | 2020-11-06 |
WO2015009745A1 (en) | 2015-01-22 |
TWI654701B (zh) | 2019-03-21 |
CN105378900B (zh) | 2018-10-09 |
CN105378900A (zh) | 2016-03-02 |
KR20160034298A (ko) | 2016-03-29 |
CN107978507A (zh) | 2018-05-01 |
TW201830554A (zh) | 2018-08-16 |
US10796888B2 (en) | 2020-10-06 |
JP2016525287A (ja) | 2016-08-22 |
US20170301522A1 (en) | 2017-10-19 |
US20150024155A1 (en) | 2015-01-22 |
KR102171714B1 (ko) | 2020-10-29 |
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