JP6479748B2 - 表示装置 - Google Patents
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- JP6479748B2 JP6479748B2 JP2016254873A JP2016254873A JP6479748B2 JP 6479748 B2 JP6479748 B2 JP 6479748B2 JP 2016254873 A JP2016254873 A JP 2016254873A JP 2016254873 A JP2016254873 A JP 2016254873A JP 6479748 B2 JP6479748 B2 JP 6479748B2
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- 239000000758 substrate Substances 0.000 claims description 102
- 239000011229 interlayer Substances 0.000 claims description 36
- 238000002161 passivation Methods 0.000 claims description 25
- 239000010408 film Substances 0.000 description 146
- 101100033865 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RFA1 gene Proteins 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 15
- 101100524516 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RFA2 gene Proteins 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 7
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
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- 101150031080 nup85 gene Proteins 0.000 description 4
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- 229910052779 Neodymium Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004840 adhesive resin Substances 0.000 description 3
- 229920006223 adhesive resin Polymers 0.000 description 3
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229920002457 flexible plastic Polymers 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical class C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/118—Printed elements for providing electric connections to or between printed circuits specially for flexible printed circuits, e.g. using folded portions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Description
<実施形態>
図4に図示された有機発光表示装置を製造した。この際、ゲートパッド部及びデータパッド部に、図10に図示された幅70μmのシンク部を各々備えた。
前述した実施形態と同様に有機発光表示装置を製造した。この際、ゲートパッド部及びデータパッド部にシンク部は備えられなかった。
Claims (7)
- 基板と、
前記基板上に位置し、画像を表示する表示領域と、
前記基板の少なくとも一縁に位置し、ゲートパッド部及び少なくとも1つの第1シンク部を含むパッド部と、
前記パッド部上に位置し、前記第1シンク部を詰める異方性導電フィルムと、
前記異方性導電フィルム上に位置して、前記パッド部に電気的に連結される軟性印刷回路基板と、を含み、
前記異方性導電フィルムは、前記基板の端部から離隔して位置し、
前記ゲートパッド部は、
前記基板上に位置するバッファ層と、
前記バッファ層上に位置するゲート絶縁膜と、
前記ゲート絶縁膜上に位置する第1配線と、
前記第1配線上に位置する層間絶縁膜と、
前記層間絶縁膜上に位置し、前記層間絶縁膜に形成された第1コンタクトホールを介して前記第1配線に接続される第2配線と
前記第2配線上に位置するパッシベーション膜と、
前記パッシベーション膜上に位置し、前記パッシベーション膜に形成された第2コンタクトホールを介して前記第2配線に接続されるゲートパッド電極と、を含み、
前記第1シンク部は、前記バッファ層の一部分、前記ゲート絶縁膜の一部分、及び前記第1配線の一部分を除去して形成されたホールであり、
前記第2配線は、前記第1シンク部において、前記基板及び前記層間絶縁膜と重畳されるように配置され、前記第1シンク部の外側の領域で前記基板、前記バッファ層、前記ゲート絶縁膜、前記第1配線、前記層間絶縁膜と重畳されるように配置される、表示装置。 - 前記パッド部は、データパッド部及び少なくとも1つの第2シンク部をさらに含み、
前記データパッド部は、
前記基板上に位置する前記バッファ層と、
前記バッファ層上に位置する前記ゲート絶縁膜と、
前記ゲート絶縁膜上に位置する前記層間絶縁膜と、
前記層間絶縁膜上に位置する第3配線と、
前記第3配線上に位置するパッシベーション膜と、
前記パッシベーション膜上に位置し、前記パッシベーション膜に形成された第4コンタクトホールを介して前記第3配線に接続されるデータパッド電極と、を含み、
前記第2シンク部は、前記バッファ層の一部分、前記ゲート絶縁膜の一部分、及び前記層間絶縁膜の一部分を除去して形成されたホールであり、
前記第3配線は、前記第2シンク部において、前記基板と重畳されるように配置され、前記第2シンク部の外側の領域で前記基板、前記バッファ層、前記ゲート絶縁膜、前記層間絶縁膜と重畳されるように配置される、請求項1に記載の表示装置。 - 前記第1シンク部は、前記ゲートパッド部に連続的に配置され、前記第2シンク部は、前記データパッド部に連続的に配置される、請求項2に記載の表示装置。
- 前記第1シンク部は、前記ゲートパッド部に不連続的に配置され、前記第2シンク部は、前記データパッド部に不連続的に配置される、請求項2に記載の表示装置。
- 前記第1及び第2シンク部は、前記基板の端部と並んで複数個に配置される、請求項2に記載の表示装置。
- 前記第1及び第2シンク部の幅は少なくとも70μm以上である、請求項2に記載の表示装置。
- 前記ゲートパッド電極は、前記第1シンク部を通って端部まで延長され、前記第1シンク部で前記異方性導電フィルムと直接接触する、請求項1に記載の表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2016-0092729 | 2016-07-21 | ||
KR1020160092729A KR101853032B1 (ko) | 2016-07-21 | 2016-07-21 | 표시장치 |
Publications (2)
Publication Number | Publication Date |
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JP2018013762A JP2018013762A (ja) | 2018-01-25 |
JP6479748B2 true JP6479748B2 (ja) | 2019-03-06 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016254873A Active JP6479748B2 (ja) | 2016-07-21 | 2016-12-28 | 表示装置 |
Country Status (6)
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US (2) | US10224503B2 (ja) |
JP (1) | JP6479748B2 (ja) |
KR (1) | KR101853032B1 (ja) |
CN (1) | CN107644889B (ja) |
DE (1) | DE102016125945B4 (ja) |
TW (1) | TWI623097B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106449666B (zh) * | 2016-12-02 | 2018-04-03 | 京东方科技集团股份有限公司 | 阵列基板和显示装置 |
CN108877545B (zh) * | 2018-06-29 | 2020-12-22 | 上海天马有机发光显示技术有限公司 | 显示装置 |
US10809576B2 (en) | 2018-09-30 | 2020-10-20 | HKC Corporation Limited | Display panel, display device, and method for manufacturing display panel |
CN109240003A (zh) * | 2018-09-30 | 2019-01-18 | 重庆惠科金渝光电科技有限公司 | 显示面板、显示装置及显示面板制造方法 |
KR102542808B1 (ko) * | 2018-10-15 | 2023-06-12 | 엘지디스플레이 주식회사 | 표시장치 |
CN109377890B (zh) * | 2018-12-21 | 2020-01-21 | 武汉华星光电半导体显示技术有限公司 | 柔性显示装置 |
CN110289270B (zh) * | 2019-06-28 | 2021-10-26 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
KR20210010763A (ko) | 2019-07-19 | 2021-01-28 | 삼성디스플레이 주식회사 | 표시 장치 |
KR20210049225A (ko) * | 2019-10-24 | 2021-05-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN110782794B (zh) * | 2019-11-13 | 2021-12-10 | 深圳市沐梵照明有限公司 | 一种柔性透明led显示膜 |
KR20210124555A (ko) | 2020-04-03 | 2021-10-15 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 포함하는 표시 장치 |
KR20220090001A (ko) * | 2020-12-22 | 2022-06-29 | 엘지디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
CN114152619B (zh) * | 2021-11-30 | 2024-05-03 | 天马微电子股份有限公司 | 线路板及显示装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000208178A (ja) * | 1999-01-20 | 2000-07-28 | Mitsubishi Electric Corp | 半導体応用装置及びその製造方法 |
JP2005043804A (ja) * | 2003-07-25 | 2005-02-17 | Seiko Epson Corp | 表示装置、アクティブマトリクス基板、及び電子機器 |
KR100579184B1 (ko) * | 2003-11-24 | 2006-05-11 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 |
KR100671640B1 (ko) * | 2004-06-24 | 2007-01-18 | 삼성에스디아이 주식회사 | 박막 트랜지스터 어레이 기판과 이를 이용한 표시장치와그의 제조방법 |
JP4304134B2 (ja) * | 2004-08-03 | 2009-07-29 | シャープ株式会社 | 入力用配線フィルムおよびこれを備えた表示装置 |
JP2007086110A (ja) * | 2005-09-20 | 2007-04-05 | Sanyo Epson Imaging Devices Corp | 電気光学装置及び電子機器 |
JP2007123665A (ja) * | 2005-10-31 | 2007-05-17 | Ricoh Co Ltd | 半導体装置用電気回路 |
KR20080001181A (ko) * | 2006-06-29 | 2008-01-03 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이 기판과 그 제조방법 |
JP2010225845A (ja) * | 2009-03-24 | 2010-10-07 | Seiko Epson Corp | 基板の接続構造、電気光学装置、および電子機器 |
KR101361925B1 (ko) * | 2010-07-07 | 2014-02-21 | 엘지디스플레이 주식회사 | 저저항배선 구조를 갖는 박막 트랜지스터 기판 및 그 제조 방법 |
JP5494345B2 (ja) * | 2010-08-18 | 2014-05-14 | 株式会社デンソー | 有機el表示装置 |
KR101826898B1 (ko) * | 2011-05-26 | 2018-03-23 | 삼성디스플레이 주식회사 | 표시패널 |
JP2013011770A (ja) * | 2011-06-29 | 2013-01-17 | Bridgestone Corp | 情報表示パネルモジュール |
KR20130013515A (ko) * | 2011-07-28 | 2013-02-06 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20130015397A (ko) * | 2011-08-03 | 2013-02-14 | 삼성디스플레이 주식회사 | 평판 표시 장치, 평판 표시 장치용 원장 기판, 평판 표시 장치 제조 방법 및 평판 표시 장치용 원장 기판 제조 방법 |
US8780568B2 (en) * | 2011-12-28 | 2014-07-15 | Panasonic Corporation | Flexible display device |
KR102000209B1 (ko) * | 2012-11-16 | 2019-07-16 | 삼성디스플레이 주식회사 | 표시장치 및 표시장치의 제조방법 |
KR20140074740A (ko) * | 2012-12-10 | 2014-06-18 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그의 제조방법 |
KR102066087B1 (ko) * | 2013-05-28 | 2020-01-15 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그의 제조방법 |
KR102137474B1 (ko) * | 2013-10-18 | 2020-07-27 | 삼성디스플레이 주식회사 | 패드 전극 구조물 및 상기 패드 전극 구조물을 포함하는 유기 발광 표시 장치 |
KR101669060B1 (ko) * | 2014-05-02 | 2016-11-10 | 엘지디스플레이 주식회사 | 표시장치 및 이를 제조하는 방법 |
CN104091891A (zh) * | 2014-06-03 | 2014-10-08 | 京东方科技集团股份有限公司 | 柔性基板及其制造方法、显示装置 |
CN104678620A (zh) * | 2015-03-20 | 2015-06-03 | 合肥京东方光电科技有限公司 | 一种阵列基板及具有该阵列基板的显示装置 |
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TWI623097B (zh) | 2018-05-01 |
DE102016125945B4 (de) | 2020-06-04 |
TW201804606A (zh) | 2018-02-01 |
US10446789B2 (en) | 2019-10-15 |
CN107644889A (zh) | 2018-01-30 |
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