JP6473778B2 - 光学的封止構造体 - Google Patents
光学的封止構造体 Download PDFInfo
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- JP6473778B2 JP6473778B2 JP2017120827A JP2017120827A JP6473778B2 JP 6473778 B2 JP6473778 B2 JP 6473778B2 JP 2017120827 A JP2017120827 A JP 2017120827A JP 2017120827 A JP2017120827 A JP 2017120827A JP 6473778 B2 JP6473778 B2 JP 6473778B2
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- 229910000679 solder Inorganic materials 0.000 claims description 15
- 230000001681 protective effect Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 2
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- 238000001514 detection method Methods 0.000 description 6
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- 238000000465 moulding Methods 0.000 description 4
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- 238000012545 processing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
211 (基板の)第1表面
212 (基板の)第2表面
213 (基板の)側縁
22 光学ユニット
221 機能面(検出面)
23、43 ワイヤ
231、431 パッド
24 スルーホール
241 充填剤
25 フレーム層
251 (フレーム層の)内縁
252 (フレーム層の)外縁
253 (フレーム層の)上縁
26 透明板
261 (透明板の)第1表面
262 (透明板の)第2表面
263、263’ (透明板の)側縁
27、27’、57 封止層
271、571 (封止層の)内縁
272 (封止層の)外縁
273、273’ (封止層の)上縁
28 接着層
281 (接着層の)内縁
282 (接着層の)外縁
31 積層膜
32 保護膜
35 空洞
65 スロット
66 空間
D1 フレーム層の高さ
D2 接着層の高さ
Claims (10)
- 第1表面と前記第1表面とは反対側の第2表面を有する基板と;
前記基板の前記第1表面上に形成され、前記基板上の空洞を取り囲むフレーム層と;
前記基板の前記第1表面上に配置され、前記空洞内に実装された光学ユニットと;
前記フレーム層の上縁の一部分の上に形成され、前記フレーム層の上縁の他の部分を露出させる接着層と;
前記接着層の上に取り付けられ、前記光学ユニットの全域に広がり、前記接着層の外縁を越えて広がり、第1表面と前記第1表面とは反対側で、且つ、前記光学ユニットの方を向いた第2表面を有する透明板と;
前記透明板の側縁及び前記接着層の外縁を覆い、前記透明板の前記第2表面及び前記フレーム層の上縁を部分的に覆う封止層と、
を備えたことを特徴とする光学的封止構造体。 - 前記封止層の外縁は、前記フレーム層の外縁と一直線に揃えられていることを特徴とする請求項1に記載の光学的封止構造体。
- 前記封止層は、さらに前記フレーム層の外縁を完全に覆うと共に、前記基板の前記第1表面を部分的に覆い、前記封止層の外縁は、前記基板の側縁と一直線に揃えられていることを特徴とする請求項1に記載の光学的封止構造体。
- 前記封止層の上縁は、前記封止層の内縁から俯角を有するように延びており、前記俯角は5度乃至60度の範囲内であることを特徴とする請求項1に記載の光学的封止構造体。
- 前記光学ユニットの電気的に接続された少なくとも1つのワイヤと;
前記少なくとも1つのワイヤと電気的に接続され、前記基板の前記第1表面上又は前記フレーム層の前記上縁の露出された部分に配置された少なくとも1つのパッドと;
をさらに有することを特徴とする請求項1に記載の光学的封止構造体。 - 前記基板の前記第1表面と前記第2表面を電気的に接続する複数のスルーホールが前記基板中に設けられており、前記基板の前記第1表面上の前記スルーホールの開口は、前記光学ユニット、前記フレーム層又は前記封止層の下に位置しており、前記スルーホールの開口と前記光学ユニット、前記フレーム層又は前記封止層との間に保護膜が形成されていることを特徴とする請求項1に記載の光学的封止構造体。
- 前記透明板は階段状に切断された縁を有し、前記封止層は前記透明板の階段状に切断された縁を覆うことを特徴とする請求項1に記載の光学的封止構造体。
- 第1表面と前記第1表面とは反対側の第2表面を有する基板と;
前記基板の前記第1表面上に形成され、前記基板上の空洞を取り囲むフレーム層と;
前記基板の前記第1表面上に配置され、前記空洞内に実装された光学ユニットと;
前記光学ユニットに電気的に接続された少なくとも1つのワイヤと;
前記フレーム層の上に取り付けられ、前記空洞を覆う透明板と;
前記透明板の側縁及び前記フレーム層の外縁を覆う封止層と;
前記透明板と前記フレーム層の間に形成された接着層と;
を含む光学的封止構造体であって、
前記基板の前記第1表面と前記第2表面とを接続する複数のスルーホールが前記基板中に設けられ、前記基板の前記第1表面上の前記スルーホールの開口は、前記光学ユニット、前記フレーム層又は前記封止層の下に位置し、保護膜が、前記スルーホールの開口と前記光学ユニット、前記フレーム層又は前記封止層との間に形成され、前記ワイヤは前記スルーホールと電気的に接続され、前記透明板は前記接着層の外縁を越えて広がっていることを特徴とする光学的封止構造体。 - 前記保護膜ははんだマスクであることを特徴とする請求項8に記載の光学的封止構造体。
- 前記スルーホールは、導電性材料、はんだマスク又は樹脂で充填されていることを特徴とする請求項8に記載の光学的封止構造体。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662352608P | 2016-06-21 | 2016-06-21 | |
US62/352,608 | 2016-06-21 | ||
US201662353154P | 2016-06-22 | 2016-06-22 | |
US62/353,154 | 2016-06-22 | ||
CN201710067651.6A CN107527928B (zh) | 2016-06-21 | 2017-02-07 | 光学组件封装结构 |
CN201710067651.6 | 2017-02-07 |
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JP2017228779A JP2017228779A (ja) | 2017-12-28 |
JP6473778B2 true JP6473778B2 (ja) | 2019-02-20 |
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JP2017120827A Active JP6473778B2 (ja) | 2016-06-21 | 2017-06-20 | 光学的封止構造体 |
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JP (1) | JP6473778B2 (ja) |
CN (1) | CN107527928B (ja) |
TW (1) | TWI648848B (ja) |
Families Citing this family (4)
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CN115903300A (zh) * | 2021-08-18 | 2023-04-04 | 庆鼎精密电子(淮安)有限公司 | 背光板及其制作方法 |
CN113691229B (zh) * | 2021-08-25 | 2023-11-28 | 北京超材信息科技有限公司 | 声学装置封装结构 |
CN115241297B (zh) * | 2022-09-23 | 2023-01-31 | 江苏长电科技股份有限公司 | 芯片封装结构及其制作方法 |
CN115527957B (zh) * | 2022-11-29 | 2023-03-24 | 江苏长电科技股份有限公司 | 空腔封装结构及封装方法 |
Family Cites Families (15)
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US6384473B1 (en) * | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
US6603183B1 (en) * | 2001-09-04 | 2003-08-05 | Amkor Technology, Inc. | Quick sealing glass-lidded package |
EP1357605A1 (en) * | 2002-04-22 | 2003-10-29 | Scientek Corporation | Image sensor semiconductor package with castellation |
CN1577875A (zh) * | 2003-07-29 | 2005-02-09 | 许程翔 | 水平控制的影像感测晶片封装结构及其封装方法 |
TWM264648U (en) * | 2004-10-21 | 2005-05-11 | Chipmos Technologies Inc | Image sensor package |
CN1921126A (zh) * | 2005-08-25 | 2007-02-28 | 矽格股份有限公司 | 光传感器封装结构 |
TWI349983B (en) * | 2007-11-07 | 2011-10-01 | Advanced Semiconductor Eng | Memes package structure |
TW201104850A (en) * | 2009-07-29 | 2011-02-01 | Kingpak Tech Inc | Image sensor package structure with large air cavity |
TW201104747A (en) * | 2009-07-29 | 2011-02-01 | Kingpak Tech Inc | Image sensor package structure |
TWI511243B (zh) * | 2009-12-31 | 2015-12-01 | Xintec Inc | 晶片封裝體及其製造方法 |
JP2012069851A (ja) * | 2010-09-27 | 2012-04-05 | Sony Corp | 固体撮像装置の製造方法及び固体撮像装置 |
CN103021598B (zh) * | 2011-09-26 | 2016-05-25 | 聚鼎科技股份有限公司 | 过电流保护元件 |
JP5875821B2 (ja) * | 2011-09-30 | 2016-03-02 | 太陽インキ製造株式会社 | 感光性樹脂組成物、その硬化皮膜およびプリント配線板 |
TWI540709B (zh) * | 2012-12-28 | 2016-07-01 | 群豐科技股份有限公司 | 光電封裝體及其製造方法 |
JP6221299B2 (ja) * | 2013-03-28 | 2017-11-01 | 日本電気株式会社 | 気密封止体及び気密封止方法 |
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- 2017-02-07 CN CN201710067651.6A patent/CN107527928B/zh active Active
- 2017-06-15 TW TW106120055A patent/TWI648848B/zh active
- 2017-06-20 JP JP2017120827A patent/JP6473778B2/ja active Active
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TW201810634A (zh) | 2018-03-16 |
CN107527928B (zh) | 2020-04-07 |
JP2017228779A (ja) | 2017-12-28 |
TWI648848B (zh) | 2019-01-21 |
CN107527928A (zh) | 2017-12-29 |
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