CN107742630B - 影像感测器封装结构 - Google Patents
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Abstract
本发明是有关于一种影像感测器封装结构,其包括:基板具有第一表面及第二表面;感测器芯片固设于第一表面上,感测器芯片具有感测区;透明板体固设于感测器芯片上,透明板体通过中间物与感测器芯片相结合,以使透明板体与感测器芯片间形成空间;多个电性连接基板及感测器芯片的引线,并且多个引线位于中间物的外侧;第一封胶层包覆多个引线及中间物外侧的感测器芯片上表面及感测器芯片位置以外的第一表面,第一封胶层包覆至透明板体侧面的一部分,第一封胶层上表面的高度低于该透明板体的上表面的高度;第二封胶层覆盖于第一封胶层之外,第二封胶层包覆透明板体侧面的另一部分,第二封胶层上表面与透明板体的上表面平行。本发明之影像感测器封装结构通过二阶段封装的方式制造,避免形成封胶层时产生的过大压力,致使封胶溢入而污染感测器芯片。
Description
本申请是申请日为2013年7月23日、申请号为201310311466.9的发明专利申请《影像感测器二阶段封装方法》的分案申请
技术领域
本发明是关于一种影像感测器封装结构,特别是关于一种通过影像感测器二阶段封装方法所制造的影像感测器封装结构。
背景技术
公知技术中,为了保护影像感测器芯片及连接影像感测器芯片与基板的引线,在影像感测器芯片与引线上都会以模造方式制造一层封胶体(encapsulant)。
但公知的封胶体制造方法,却经常因为模造方式中封胶体产生的压力,使影像感测器芯片或引线产生位移或断裂或封胶溢入而污染被透明板体保护的感测器芯片,影响影像感测器芯片的正常功能并造成影像感测器芯片中感测区的污染,大幅降低影像感测器封装的良率。
因此,如何发展出一种可以有效将低封胶体模造压力的影像感测器封装方法,就变成为今日半导体及影像感测器产业,研发及制造的一个重要发展课题。
发明内容
本发明的目的在于提供一种影像感测器二阶段封装方法以及影像感测器封装结构,其可以避免因为影像感测器封装制造工艺中形成封胶层时产生过大的压力,致使感测器芯片或电性连接用的引线产生位移或毁损,而影响影像感测器封装制造工艺的良率或影像感测器本身的感测灵敏度的缺陷。
本发明的目的及解决其技术问题是采用以下技术方案来实现的。依据本发明提出的影像感测器二阶段封装方法,其包括下列步骤:提供基板,该基板具有:第一表面;及第二表面,其与该第一表面相对;固设感测器芯片于该基板上,其是将该感测器芯片固设于该第一表面上,并且该感测器芯片具有感测区;固设透明板体于该感测器芯片上,其中该透明板体通过中间物与该感测器芯片相结合,以使该透明板体与该感测器芯片间形成密闭空间,又该中间物围绕该感测区外侧并使该感测区位于该密闭空间之中;电性连接该基板及该感测器芯片,其是通过多个引线电性连接该基板及该感测器芯片,并且多个引线位于该中间物的外侧;形成第一封胶层,其是以第一封胶体包覆多个引线及该中间物外侧的该感测器芯片上表面及该感测器芯片位置以外的该第一表面,并使该第一封胶体固化形成该第一封胶层,其中该第一封胶层包覆至该透明板体侧面的一部分,且该第一封胶层上表面的高度低于该透明板体的上表面的高度;以及形成第二封胶层,其是以第二封胶体覆盖于该第一封胶层之外,并使该第二封胶体固化形成该第二封胶层,又该第二封胶层包覆该透明板体侧面的剩余部分,且该第二封胶层上表面与该透明板体的上表面等高又共平面。
本发明的目的在于提供一种影像感测器封装结构,其包括:一基板,该基板具有第一表面及与该第一表面相对的第二表面;一感测器芯片,该感测器芯片固设于该第一表面上,并且该感测器芯片具有感测区;一透明板体,固设于该感测器芯片上,其中该透明板体通过中间物与该感测器芯片相结合,以使该透明板体与该感测器芯片间形成空间,又该中间物围绕该感测区外侧;多个电性连接该基板及该感测器芯片的引线,并且多个引线位于该中间物的外侧;一第一封胶层,其包覆多个引线及该中间物外侧的该感测器芯片上表面及该感测器芯片位置以外的该第一表面,其中该第一封胶层包覆至该透明板体侧面的一部分,且该第一封胶层上表面的高度低于该透明板体的上表面的高度;以及一第二封胶层,其覆盖于该第一封胶层之外,其中该第二封胶层包覆该透明板体侧面的另一部分,且该第二封胶层上表面与该透明板体的上表面平行。
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。
前述的影像感测器封装结构,其中该基板为塑料基板或陶瓷基板,且具有多个导电接脚固设于该第二表面上。
前述的影像感测器封装结构,其中该感测器芯片为CMOS感测器芯片或该CMOS感测器芯片结合电子电路所形成的芯片。
前述的影像感测器封装结构,其中该中间物的材质为玻璃或塑料,并且该中间物的上下两端分别通过黏着剂与该感测器芯片及该透明板体相密接。
前述的影像感测器封装结构,其中该中间物为液晶聚合物材料压模成型所形成,并且该中间物的上下两端分别通过黏着剂与该感测器芯片及该透明板体相密接。
前述的影像感测器封装结构,其中该中间物为热固化黏胶或紫外光固化黏胶或具接着性的聚酰亚胺或酰胺树脂,并借由固化该中间物的过程将该透明板体黏着于该感测器芯片。
前述的影像感测器封装结构,其中该密闭空间的高度介于100微米(um)至500微米(um)之间。
前述的影像感测器封装结构,其中该第一封胶层的上表面是由该透明板体的侧面朝向该基板倾斜的斜坡面。
前述的影像感测器封装结构,其中该第二封胶层的厚度随着与该透明板体的侧面之距离变大而渐增。
前述的影像感测器二阶段封装方法,其中该第一封胶层及该第二封胶层的侧面皆与该基板的侧面切齐。
借由上述技术方案,本发明影像感测器二阶段封装方法以及影像感测器封装结构至少具有下列优点及有益效果:
一、有效降低封胶体模造压力对影像感测器及引线产生的影响;及
二、提高影像感测器封装制造工艺的良率、质量与产量,并降低制造成本。
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。
附图说明
图1为本发明实施例一种影像感测器二阶段封装方法步骤流程图;
图2A为本发明实施例一种基板剖视图;
图2B为本发明实施例一种影像感测器芯片固设于基板上的剖视图;
图2C为如图2B所示的结构再固设透明板体的实施例剖视图;
图2D为如图2C所示的结构再将影像感测器芯片及基板电性连接的实施例剖视图;
图2E为如图2D所示的结构再形成一第一封胶层的实施例剖视图;
图2F为本发明实施例一种如图2E所示的结构再形成一第二封胶层,使其成为影像感测器二阶段封装方法所制造的一种影像感测器封装体的剖视图;及
图3为本发明实施例一种影像感测器二阶段封装方法所制造的另一种影像感测器封装体剖视图。
10:基板
11:第一表面 12:第二表面
13:导电接脚 20:感测器芯片
21:感测区 30:透明板体
40:中间物 41:黏着剂
50:密闭空间
H:密闭空间的高度
60:引线 61:接头
70:第一封胶层 80:第二封胶层
具体实施方式
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的影像感测器二阶段封装方法,其具体实施方式、方法、步骤、特征及其功效,详细说明如后。
如图1所示,本实施例一种影像感测器二阶段封装方法S100包括下列步骤:提供基板(步骤S10);固设感测器芯片于基板上(步骤S20);固设透明板体于感测器芯片上(步骤S30);电性连接基板及感测器芯片(步骤S40);形成第一封胶层(步骤S50);及形成第二封胶层(步骤S60)。
如图1、图2A、图2F及图3所示,提供基板(步骤S10),其中基板10具有第一表面11及第二表面12,第二表面12与第一表面11相对。基板10可以为塑料基板或陶瓷基板,又基板10可具有多个导电接脚13固设于第二表面12上,多个导电接脚13可以做为影像感测器芯片20或基板10上的电路与基板10外部电性相连接。
如图1、图2B、图2F及图3所示,固设感测器芯片于基板上(步骤S20),其是将感测器芯片20固设于基板10的第一表面11上。感测器芯片20并且具有感测区21,作为感测器芯片20用以进行感测的信号输入区域。感测器芯片20可以为CMOS感测器芯片或CMOS感测器芯片结合电子电路所形成的芯片。
如图1、图2C、图2F及图3所示,固设透明板体于感测器芯片上(步骤S30),其是将透明板体30通过中间物40与感测器芯片20相结合,以使透明板体30与感测器芯片20间形成密闭空间50。其中,中间物40围绕感测区21的外侧并使感测区21位于密闭空间50之中。
如图2C至图3所示,透明板体30可以为透明玻璃或透明树脂或透明塑料等材质所形成,感测器芯片20欲感测的信号可以穿透透明板体30而被感测区21接收。当中间物40的材质为玻璃或塑料或聚酰亚胺(Polyimide)或酰胺树脂(Amide Resin)所形成,或是由液晶聚合物(LCP,Liquid Crystal Polymer)材料压模成型所形成时,中间物40的上下两端还分别通过黏着剂41与感测器芯片20及透明板体30相密接。
如图3所示,中间物40亦可以为热固化黏胶(Heat Curable Adhesive)或紫外光固化黏胶(UV Curable Adhesive)或具接着性的聚酰亚胺或酰胺树脂,并借由固化中间物40的过程将透明板体30黏着于感测器芯片20。因此当中间物40为热固化黏胶或紫外光固化黏胶时,便不须再使用黏着剂41,即可使中间物40与感测器芯片20及透明板体30相密接。
如图2C、图2F及图3所示,中间物40、透明板体30与感测器芯片20所围成的密闭空间50内,其透明板体30与感测器芯片20间的垂直距离为密闭空间的高度H,且密闭空间的高度H可以在进行固设透明板体于感测器芯片上(步骤S30)时,借由选择中间物40的尺寸大小,可以提供使用者依照感测器芯片20的感测需求所决定的密闭空间的高度H。
如图2C及图2F所示的密闭空间50的高度H,可以选择介于100um至500um之间(μm=微米,10-6米)。
如图1、图2D、图2F及图3所示,电性连接基板及感测器芯片(步骤S40)是通过将多个引线60两端的接头61分别连接至基板10及感测器芯片20,以使基板10及感测器芯片20相互电性连接,并且多个引线60及接头61皆位于中间物40的外侧,亦即多个引线60及接头61是位于密闭空间50之外。其中,多个引线60可以为金(Au)线,或是金与银或是金与铜混和物质形成的电导线。
如图1、图2E、图2F及图3所示,形成第一封胶层(步骤S50),其是以第一封胶体包覆多个引线60及多个接头61及中间物40外侧的感测器芯片20上表面及感测器芯片20位置以外的第一表面11,并使第一封胶体固化形成第一封胶层70,其中第一封胶层70可包覆至透明板体30侧面的一部分,且第一封胶层70上表面的高度低于透明板体30上表面的高度。
第一封胶体可以为环氧树脂(Epoxy),又第一封胶体可以点胶(dispensing)方式填入以包覆多个引线60、引线60两端的接头61、中间物40外侧的感测器芯片20上表面及感测器芯片20位置以外的第一表面11,并且在填入时第一封胶体仍为液态胶状物质,且因为使用量不需填满至与透明板体30等高,其产生的压力也相对较小,更因其还具有可流动性,所以对引线60、引线60两端的接头61或感测器芯片20的影响也较小,并且第一封胶体固化为第一封胶层70后,又可达到保护第一封胶层70内所有构件的功效,所有构件是指前述的多个引线60、引线60两端的接头61、中间物40外侧的感测器芯片20上表面及感测器芯片20位置以外的第一表面11。
如图1、图2F及图3所示,形成第二封胶层(步骤S60),其是以第二封胶体覆盖于第一封胶层70之外,并使第二封胶体固化形成第二封胶层80,又第二封胶层80包覆至透明板体30侧面的剩余部分,第二封胶层80上表面是与透明板体30的上表面等高又共平面。
如图2E、图2F及图3所示,第一封胶层70及第二封胶层80的侧面皆可以与基板10的侧面切齐。
由于在第一封胶体固化形成第一封胶层70之后,才将第二封胶体覆盖于第一封胶层70之外,第一封胶层70所覆盖并保护的所有构件便不会因为形成第二封胶层(步骤S60)产生的压力而受影响。
第二封胶体可以为热固化封胶体,其又可以依照不同的应用需求选择不同的材质或颜色,当使用在本实施例的影像感测器二阶段封装方法S100时,为达到不透光以避免干扰感测功能,可以选择黑色或不易透光的材质或颜色。
综上所述,本实施例所述的影像感测器二阶段封装方法S100,由于第一封胶层70及第二封胶层80是以二阶段封装,因此能大幅降低对引线60或感测器芯片20因压力产生的不良影响,可以提高影像感测器封装制造工艺的良率、质量与产量,并降低制造成本。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。
Claims (9)
1.一种影像感测器封装结构,其特征在于,所述影像感测器封装结构包括:
一基板,该基板具有第一表面及与该第一表面相对的第二表面;
一感测器芯片,该感测器芯片固设于该第一表面上,并且该感测器芯片具有感测区;
一透明板体,固设于该感测器芯片上,其中该透明板体通过中间物与该感测器芯片相结合,以使该透明板体与该感测器芯片间形成空间,又该中间物围绕该感测区外侧;
多个电性连接该基板及该感测器芯片的引线,并且多个引线位于该中间物的外侧;
一第一封胶层,其包覆多个引线及该中间物外侧的该感测器芯片上表面及该感测器芯片位置以外的该第一表面,其中该第一封胶层包覆至该透明板体侧面的一部分,且该第一封胶层上表面的高度低于该透明板体的上表面的高度,该第一封胶层的上表面是由该透明板体的侧面朝向该基板倾斜的斜坡面;以及
一第二封胶层,其覆盖于该第一封胶层之外,其中该第二封胶层包覆该透明板体侧面的另一部分,且该第二封胶层上表面与该透明板体的上表面平行。
2.根据权利要求1所述的影像感测器封装结构,其特征在于,该基板为塑料基板或陶瓷基板,且具有多个导电接脚固设于该第二表面上。
3.根据权利要求1所述的影像感测器封装结构,其特征在于,该感测器芯片为CMOS感测器芯片或该CMOS感测器芯片结合电子电路所形成的芯片。
4.根据权利要求1所述的影像感测器封装结构,其特征在于,该中间物的材质为玻璃或塑料,并且该中间物的上下两端分别通过黏着剂与该感测器芯片及该透明板体相密接。
5.根据权利要求1所述的影像感测器封装结构,其特征在于,该中间物为液晶聚合物材料压模成型所形成,并且该中间物的上下两端分别通过黏着剂与该感测器芯片及该透明板体相密接。
6.根据权利要求1所述的影像感测器封装结构,其特征在于,该中间物为热固化黏胶或紫外光固化黏胶或具接着性的聚酰亚胺或酰胺树脂,并借由固化该中间物的过程将该透明板体黏着于该感测器芯片。
7.根据权利要求1所述的影像感测器封装结构,其特征在于,该空间的高度介于100微米(um)至500微米(um)之间。
8.根据权利要求1所述的影像感测器封装结构,其特征在于,该第二封胶层的厚度随着与该透明板体的侧面之距离变大而渐增。
9.根据权利要求1所述的影像感测器封装结构,其特征在于,该第一封胶层及该第二封胶层的侧面皆与该基板的侧面切齐。
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Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9165794B1 (en) * | 2014-07-31 | 2015-10-20 | Himax Display, Inc. | Partial glob-top encapsulation technique |
FR3029687A1 (fr) * | 2014-12-09 | 2016-06-10 | Stmicroelectronics (Grenoble 2) Sas | Procede de fabrication de dispositifs electroniques et dispositif electronique a double anneau d'encapsulation |
US9711425B2 (en) | 2015-08-20 | 2017-07-18 | Xintec Inc. | Sensing module and method for forming the same |
KR102185063B1 (ko) | 2015-08-31 | 2020-12-01 | 삼성전기주식회사 | 센싱 패키지 및 이의 제조방법 |
WO2017166798A1 (zh) * | 2016-03-28 | 2017-10-05 | 宁波舜宇光电信息有限公司 | 摄像模组及其模塑感光组件和制造方法以及电子设备 |
CN107591420B (zh) * | 2016-07-06 | 2020-02-18 | 胜丽国际股份有限公司 | 感测器封装结构 |
EP3267485B1 (en) * | 2016-07-06 | 2020-11-18 | Kingpak Technology Inc. | Sensor package structure |
US10692917B2 (en) * | 2016-07-06 | 2020-06-23 | Kingpak Technology Inc. | Sensor package structure |
EP3267486B1 (en) | 2016-07-06 | 2020-12-30 | Kingpak Technology Inc. | Sensor package structure |
CN107611147B (zh) | 2016-07-11 | 2020-02-18 | 胜丽国际股份有限公司 | 多芯片塑胶球状数组封装结构 |
CN109411487B (zh) * | 2017-08-15 | 2020-09-08 | 胜丽国际股份有限公司 | 堆叠式感测器封装结构 |
US10340250B2 (en) * | 2017-08-15 | 2019-07-02 | Kingpak Technology Inc. | Stack type sensor package structure |
TWI640073B (zh) * | 2017-08-16 | 2018-11-01 | 勝麗國際股份有限公司 | 感測器封裝結構 |
US11561330B2 (en) | 2018-03-19 | 2023-01-24 | Tdk Taiwan Corp. | Photosensitive module having transparent plate and image sensor |
US11081510B2 (en) | 2018-03-19 | 2021-08-03 | Tdk Taiwan Corp. | Photosensitive module having transparent plate and image sensor |
KR101967261B1 (ko) | 2018-05-28 | 2019-08-13 | 테라셈 주식회사 | 이미지 센서 패키지 및 이것의 제조 방법 |
JP2020036216A (ja) | 2018-08-30 | 2020-03-05 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置及び固体撮像装置の製造方法 |
US11177301B2 (en) | 2018-11-19 | 2021-11-16 | UTAC Headquarters Pte. Ltd. | Reliable semiconductor packages |
TWI685922B (zh) | 2019-02-22 | 2020-02-21 | 勝麗國際股份有限公司 | 晶片級感測器封裝結構 |
CN111627866B (zh) * | 2019-02-27 | 2022-03-04 | 胜丽国际股份有限公司 | 芯片级传感器封装结构 |
CN111769125B (zh) * | 2019-04-02 | 2023-08-01 | 同欣电子工业股份有限公司 | 感测器封装结构 |
CN110021619A (zh) * | 2019-05-17 | 2019-07-16 | 积高电子(无锡)有限公司 | 图像传感器封装结构及封装方法 |
CN110112163A (zh) * | 2019-05-17 | 2019-08-09 | 积高电子(无锡)有限公司 | 一种图像传感器封装结构及封装方法 |
KR102081612B1 (ko) | 2019-11-25 | 2020-05-15 | 테라셈 주식회사 | 반도체 패키지 및 이것의 제조 방법 |
KR102110143B1 (ko) | 2019-11-25 | 2020-05-13 | 테라셈 주식회사 | 이미지 센서 패키지 및 이것의 제조 방법 |
KR20210080718A (ko) | 2019-12-20 | 2021-07-01 | 삼성전자주식회사 | 반도체 패키지 |
US20210246015A1 (en) * | 2020-02-06 | 2021-08-12 | Advanced Semiconductor Engineering, Inc. | Sensor device package and method for manufacturing the same |
TWI721815B (zh) * | 2020-03-10 | 2021-03-11 | 勝麗國際股份有限公司 | 感測器封裝結構 |
TWI721837B (zh) * | 2020-03-26 | 2021-03-11 | 勝麗國際股份有限公司 | 感測器封裝結構 |
US11869912B2 (en) * | 2020-07-15 | 2024-01-09 | Semiconductor Components Industries, Llc | Method for defining a gap height within an image sensor package |
WO2022050119A1 (ja) * | 2020-09-07 | 2022-03-10 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置およびその製造方法、並びに電子機器 |
KR20220051470A (ko) | 2020-10-19 | 2022-04-26 | 삼성전자주식회사 | 반도체 패키지 및 이의 제조 방법 |
TWI769780B (zh) * | 2021-04-12 | 2022-07-01 | 勝麗國際股份有限公司 | 感測器封裝結構 |
JP2022189647A (ja) * | 2021-06-11 | 2022-12-22 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置および電子機器 |
US11798967B2 (en) * | 2021-10-06 | 2023-10-24 | Stmicroelectronics Asia Pacific Pte Ltd | Image sensor package with transparent adhesive covering the optical sensing circuit |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0951009A (ja) * | 1995-08-07 | 1997-02-18 | Dainippon Printing Co Ltd | Icモジュールの樹脂封止方法、icモジュール及びicカード |
US6646316B2 (en) * | 2001-01-24 | 2003-11-11 | Kingpak Technology, Inc. | Package structure of an image sensor and packaging |
CN1212662C (zh) * | 2002-01-16 | 2005-07-27 | 翰立光电股份有限公司 | 显示元件的封装构造 |
US6472736B1 (en) * | 2002-03-13 | 2002-10-29 | Kingpak Technology Inc. | Stacked structure for memory chips |
TW586197B (en) * | 2002-04-24 | 2004-05-01 | Scientek Corp | Image sensor semiconductor package |
US20040113286A1 (en) * | 2002-12-16 | 2004-06-17 | Jackson Hsieh | Image sensor package without a frame layer |
US6933493B2 (en) * | 2003-04-07 | 2005-08-23 | Kingpak Technology Inc. | Image sensor having a photosensitive chip mounted to a metal sheet |
US6995462B2 (en) * | 2003-09-17 | 2006-02-07 | Micron Technology, Inc. | Image sensor packages |
CN1758422A (zh) * | 2004-10-09 | 2006-04-12 | 北京七星华创电子股份有限公司 | 一种用于厚膜印刷电路的光耦封装方法 |
US7745897B2 (en) * | 2005-05-27 | 2010-06-29 | Aptina Imaging Corporation | Methods for packaging an image sensor and a packaged image sensor |
JP2007311416A (ja) * | 2006-05-16 | 2007-11-29 | Fujifilm Corp | 固体撮像装置 |
KR100818546B1 (ko) | 2006-07-31 | 2008-04-01 | 하나 마이크론(주) | 이미지 센서 패키지 및 이의 제조방법 |
TWI364823B (en) * | 2006-11-03 | 2012-05-21 | Siliconware Precision Industries Co Ltd | Sensor type semiconductor package and fabrication method thereof |
JP2008192769A (ja) * | 2007-02-02 | 2008-08-21 | Sharp Corp | 樹脂封止型半導体受光素子、樹脂封止型半導体受光素子の製造方法、及び樹脂封止型半導体受光素子を用いた電子機器 |
US7964945B2 (en) * | 2007-09-28 | 2011-06-21 | Samsung Electro-Mechanics Co., Ltd. | Glass cap molding package, manufacturing method thereof and camera module |
JP2009111130A (ja) * | 2007-10-30 | 2009-05-21 | Fujifilm Corp | 撮像装置及びその製造方法 |
CN101950751B (zh) * | 2009-07-10 | 2012-10-03 | 菱光科技股份有限公司 | 图像传感器及其封装方法 |
TWI398949B (zh) * | 2009-07-29 | 2013-06-11 | Kingpak Tech Inc | 模造成型之影像感測器封裝結構製造方法及封裝結構 |
TW201104850A (en) * | 2009-07-29 | 2011-02-01 | Kingpak Tech Inc | Image sensor package structure with large air cavity |
JP5658466B2 (ja) * | 2010-02-05 | 2015-01-28 | キヤノン株式会社 | 固体撮像装置の製造方法 |
TWI414060B (zh) * | 2010-09-17 | 2013-11-01 | Kingpak Tech Inc | 模造成型之免調焦距影像感測器構裝結構及其製造方法 |
CN102589753B (zh) * | 2011-01-05 | 2016-05-04 | 飞思卡尔半导体公司 | 压力传感器及其封装方法 |
KR20130083249A (ko) * | 2012-01-12 | 2013-07-22 | 삼성전자주식회사 | 반도체 장치 및 이를 이용한 이미지 센서 패키지 |
KR101963809B1 (ko) * | 2012-04-25 | 2019-03-29 | 삼성전자주식회사 | 이미지 센서 패키지 |
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2013
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- 2013-07-23 CN CN201310311466.9A patent/CN104282698B/zh active Active
- 2013-07-23 CN CN201710971596.3A patent/CN107742630B/zh active Active
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JP5635661B1 (ja) | 2014-12-03 |
US20150011038A1 (en) | 2015-01-08 |
KR101467699B1 (ko) | 2014-12-01 |
CN104282698B (zh) | 2017-10-20 |
TW201503334A (zh) | 2015-01-16 |
US8969120B2 (en) | 2015-03-03 |
JP2015019031A (ja) | 2015-01-29 |
CN107742630A (zh) | 2018-02-27 |
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