JP6239147B2 - 半導体パッケージ - Google Patents
半導体パッケージ Download PDFInfo
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- JP6239147B2 JP6239147B2 JP2016563325A JP2016563325A JP6239147B2 JP 6239147 B2 JP6239147 B2 JP 6239147B2 JP 2016563325 A JP2016563325 A JP 2016563325A JP 2016563325 A JP2016563325 A JP 2016563325A JP 6239147 B2 JP6239147 B2 JP 6239147B2
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- 239000004065 semiconductor Substances 0.000 title claims description 75
- 229920005989 resin Polymers 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- 238000000465 moulding Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 31
- 230000017525 heat dissipation Effects 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Description
実施の形態1.
図1はこの発明の実施の形態1に係る半導体パッケージの構成を示す断面図である。
半導体パッケージは、薄板の金属であるリードフレームを用い、ICチップ(電子部品)1を内蔵したものである。リードフレームは、図1に示すように、ICチップ1を固定するダイパッド2と、半導体パッケージの内部配線である端子3とを有している。ICチップ1はダイパッド2の上面に配置されている。なお、ダイパッド2は、ICチップ1を固定する用途の他、放熱にも用いられる。
半導体パッケージの製造工程では、まず、リードフレーム材から、エッチング等により、ダイパッド2、当該ダイパッド2を囲む端子3、及び当該端子3を囲む端子4を、所定間隔で複数作成する。この際、図2(a)に示すように、隣接する半導体パッケージの端子4部分については、それぞれの端子4を一体で構成する。
すなわち、図3(a)に示すような複数連なったパッケージに対し、図3(b)に示すように、隣接する半導体パッケージの端子4部分を途中まで切断する。そして、図3(c)に示すように、それぞれの半導体パッケージを、導体膜7で覆う。そして、隣接する半導体パッケージの端子4部分を完全に切断して、図3(d)に示すように個片化する。
図1に示す半導体パッケージの動作では、一方の端子3aから信号が入力され、ワイヤ5を介してICチップ1に入力される。このICチップ1に入力された信号は、ICチップ1内で所定の動作を行った後、ワイヤ5を介して他方の端子3bから出力される。一方、半導体パッケージに入力された信号の一部は、端子3及びワイヤ5等から電磁波として放射される。
また、本発明では、従来構成のようにセラミックキャップを用いず、リードフレームを用いているため、半導体パッケージを安価に構成することができる。また、本発明の半導体パッケージをプリント基板等に実装する際に従来構成のようなフィン及びねじ等が不要なため、従来構成に対して半導体パッケージのサイズを小型化することができる。
図4はこの発明の実施の形態2に係る半導体パッケージの構成を示す断面図である。この図4に示す実施の形態2に係る半導体パッケージは、図1に示す実施の形態1に係る半導体パッケージの端子4を端子(第2の端子)8に変更したものである。その他の構成は同様であり、同一の符号を付してその説明を省略する。
しかしながら、図4に示す半導体パッケージでは、端子8と導体膜7が電気的に接続され、この端子8が不図示のプリント基板上のグランド端子と接続されている。そのため、ICチップ1、ワイヤ5及び端子3が、接地された端子8及び導体膜7で覆われている。よって、端子3及びワイヤ5等から放射される電磁波は、半導体パッケージの外部には漏洩しない。同様に、半導体パッケージの外部に存在する電磁波は、半導体パッケージの内部には侵入しない。
それに対して、実施の形態2では、導体膜7で覆う前の状態において、端子8が半導体パッケージの側面には露出しない構造である。そのため、半導体パッケージを個片化する際にモールド樹脂6を切断することになるため、切断面のバリをなくし、ブレードの摩耗が発生しにくくなるといった効果がある。
図5はこの発明の実施の形態3に係る半導体パッケージの構成を示す断面図である。この図5に示す実施の形態3に係る半導体パッケージは、図1に示す実施の形態1に係る半導体パッケージの端子4を端子(第2の端子)9に変更し、接続部材10を追加したものである。その他の構成は同様であり、同一の符号を付してその説明を省略する。
なお、導体膜7は、モールド樹脂6の上面及び側面を覆うよう構成されている。
しかしながら、図5に示す半導体パッケージでは、端子9と導体膜7が接続部材10を介して電気的に接続され、この端子9が不図示のプリント基板上のグランド端子と接続されている。そのため、ICチップ1、ワイヤ5及び端子3が、接地された端子9及び導体膜7で覆われている。よって、端子3及びワイヤ5等から放射される電磁波は、半導体パッケージの外部には漏洩しない。同様に、半導体パッケージの外部に存在する電磁波は、半導体パッケージの内部には侵入しない。
Claims (3)
- 電子部品と、前記電子部品を固定するダイパッド、及び内部配線である端子を有するリードフレームと、前記電子部品と前記端子とを接続するワイヤと、前記電子部品及び前記ワイヤを封止するモールド樹脂とを備えた半導体パッケージにおいて、
前記リードフレームは、パッケージ面において前記端子を囲むように配置され、接地可能な一続きの第2の端子を有し、
前記モールド樹脂を覆い、前記第2の端子に電気的に接続された導電性部材を備え、
前記第2の端子は側面が前記モールド樹脂で覆われた
ことを特徴とする半導体パッケージ。 - 前記第2の端子は、前記導電性部材と当接している
ことを特徴とする請求項1記載の半導体パッケージ。 - 前記第2の端子と前記導電性部材とを電気的に接続する接続部材を備えた
ことを特徴とする請求項1記載の半導体パッケージ。
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PCT/JP2014/082544 WO2016092633A1 (ja) | 2014-12-09 | 2014-12-09 | 半導体パッケージ |
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JP2017210620A Division JP6494723B2 (ja) | 2017-10-31 | 2017-10-31 | 半導体パッケージ |
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JP6149072B2 (ja) | 2015-07-07 | 2017-06-14 | アオイ電子株式会社 | 半導体装置およびその製造方法 |
JP6683542B2 (ja) * | 2016-06-11 | 2020-04-22 | 新日本無線株式会社 | 電磁シールドを備えた半導体装置の製造方法 |
JP6597499B2 (ja) * | 2016-06-29 | 2019-10-30 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US11114386B2 (en) | 2017-05-09 | 2021-09-07 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
US20190181095A1 (en) * | 2017-12-08 | 2019-06-13 | Unisem (M) Berhad | Emi shielding for discrete integrated circuit packages |
CN111656516B (zh) * | 2018-01-15 | 2023-02-28 | 株式会社村田制作所 | 电子部件封装及其制造方法 |
US20190287918A1 (en) * | 2018-03-13 | 2019-09-19 | Texas Instruments Incorporated | Integrated circuit (ic) packages with shields and methods of producing the same |
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DE10028133B4 (de) | 2000-06-07 | 2005-11-03 | Ballard Power Systems Ag | Vorrichtung und Verfahren zum Befeuchten eines Prozessgasstroms sowie Verwendung der Vorrichtung |
JP3417388B2 (ja) * | 2000-07-19 | 2003-06-16 | 松下電器産業株式会社 | 半導体装置 |
JP2003031987A (ja) | 2001-07-12 | 2003-01-31 | Nec Yamagata Ltd | 電磁界遮蔽キャップ |
DE10148043A1 (de) * | 2001-09-28 | 2003-01-02 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Kunststoffgehäuse und Komponenten eines Systemträgers und Verfahren zu deren Herstellung |
US7030469B2 (en) * | 2003-09-25 | 2006-04-18 | Freescale Semiconductor, Inc. | Method of forming a semiconductor package and structure thereof |
US8053872B1 (en) * | 2007-06-25 | 2011-11-08 | Rf Micro Devices, Inc. | Integrated shield for a no-lead semiconductor device package |
KR100877551B1 (ko) | 2008-05-30 | 2009-01-07 | 윤점채 | 전자파 차폐 기능을 갖는 반도체 패키지, 그 제조방법 및 지그 |
WO2010110412A1 (ja) * | 2009-03-27 | 2010-09-30 | 日鉱金属株式会社 | Ti-Nb系酸化物焼結体スパッタリングターゲット、Ti-Nb系酸化物薄膜及び同薄膜の製造方法 |
US8093691B1 (en) * | 2009-07-14 | 2012-01-10 | Amkor Technology, Inc. | System and method for RF shielding of a semiconductor package |
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