JP6464286B2 - 無電解めっき用の前処理方法 - Google Patents
無電解めっき用の前処理方法 Download PDFInfo
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- JP6464286B2 JP6464286B2 JP2017561289A JP2017561289A JP6464286B2 JP 6464286 B2 JP6464286 B2 JP 6464286B2 JP 2017561289 A JP2017561289 A JP 2017561289A JP 2017561289 A JP2017561289 A JP 2017561289A JP 6464286 B2 JP6464286 B2 JP 6464286B2
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- acid
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- plating
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- 238000007772 electroless plating Methods 0.000 title claims description 45
- 238000002203 pretreatment Methods 0.000 title claims description 3
- 238000007747 plating Methods 0.000 claims description 48
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052802 copper Inorganic materials 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 40
- 150000003464 sulfur compounds Chemical class 0.000 claims description 39
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 36
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 31
- 230000004913 activation Effects 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000002253 acid Substances 0.000 claims description 15
- -1 thiourea Thiodiglycolic acid Chemical compound 0.000 claims description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 238000004132 cross linking Methods 0.000 claims description 8
- 239000011593 sulfur Substances 0.000 claims description 8
- 229910052717 sulfur Inorganic materials 0.000 claims description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 6
- 239000011707 mineral Substances 0.000 claims description 6
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 4
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 claims description 4
- 150000002941 palladium compounds Chemical class 0.000 claims description 3
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 claims description 3
- 229930192474 thiophene Natural products 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- UPYPTOCXMIWHSG-UHFFFAOYSA-N 1-dodecylsulfanyldodecane Chemical compound CCCCCCCCCCCCSCCCCCCCCCCCC UPYPTOCXMIWHSG-UHFFFAOYSA-N 0.000 claims description 2
- UGFLCFDFVHXHOC-UHFFFAOYSA-N 2-(4-acetamido-2-nitrophenyl)sulfanylacetic acid Chemical compound [N+](=O)([O-])C1=C(C=CC(=C1)NC(C)=O)SCC(=O)O UGFLCFDFVHXHOC-UHFFFAOYSA-N 0.000 claims description 2
- YPKLXLYGMAWXDO-UHFFFAOYSA-N 2-(4-chlorophenyl)sulfanylacetic acid Chemical compound OC(=O)CSC1=CC=C(Cl)C=C1 YPKLXLYGMAWXDO-UHFFFAOYSA-N 0.000 claims description 2
- DLLMHEDYJQACRM-UHFFFAOYSA-N 2-(carboxymethyldisulfanyl)acetic acid Chemical compound OC(=O)CSSCC(O)=O DLLMHEDYJQACRM-UHFFFAOYSA-N 0.000 claims description 2
- GMBZSYUPMWCDGK-UHFFFAOYSA-N 2-(carboxymethylsulfanyl)benzoic acid Chemical compound OC(=O)CSC1=CC=CC=C1C(O)=O GMBZSYUPMWCDGK-UHFFFAOYSA-N 0.000 claims description 2
- CZEVAMMETWVBOD-UHFFFAOYSA-N 2-(carboxymethylsulfanylmethylsulfanyl)acetic acid Chemical compound OC(=O)CSCSCC(O)=O CZEVAMMETWVBOD-UHFFFAOYSA-N 0.000 claims description 2
- PWKSKIMOESPYIA-UHFFFAOYSA-N 2-acetamido-3-sulfanylpropanoic acid Chemical compound CC(=O)NC(CS)C(O)=O PWKSKIMOESPYIA-UHFFFAOYSA-N 0.000 claims description 2
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical compound NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 claims description 2
- MQLJIOAPXLAGAP-UHFFFAOYSA-N 3-[amino(azaniumylidene)methyl]sulfanylpropane-1-sulfonate Chemical compound NC(=N)SCCCS(O)(=O)=O MQLJIOAPXLAGAP-UHFFFAOYSA-N 0.000 claims description 2
- WCDSVWRUXWCYFN-UHFFFAOYSA-N 4-aminobenzenethiol Chemical compound NC1=CC=C(S)C=C1 WCDSVWRUXWCYFN-UHFFFAOYSA-N 0.000 claims description 2
- BXAVKNRWVKUTLY-UHFFFAOYSA-N 4-sulfanylphenol Chemical compound OC1=CC=C(S)C=C1 BXAVKNRWVKUTLY-UHFFFAOYSA-N 0.000 claims description 2
- 239000003490 Thiodipropionic acid Substances 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- UIJGNTRUPZPVNG-UHFFFAOYSA-N benzenecarbothioic s-acid Chemical compound SC(=O)C1=CC=CC=C1 UIJGNTRUPZPVNG-UHFFFAOYSA-N 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims description 2
- UFULAYFCSOUIOV-UHFFFAOYSA-N cysteamine Chemical compound NCCS UFULAYFCSOUIOV-UHFFFAOYSA-N 0.000 claims description 2
- 229960003151 mercaptamine Drugs 0.000 claims description 2
- XPNWIWHUGHAVLC-UHFFFAOYSA-N octadecyl 3-[(3-octadecoxy-3-oxopropyl)disulfanyl]propanoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)CCSSCCC(=O)OCCCCCCCCCCCCCCCCCC XPNWIWHUGHAVLC-UHFFFAOYSA-N 0.000 claims description 2
- UVTKHPSJNFFIDG-UHFFFAOYSA-L potassium tetrathionate Chemical compound [K+].[K+].[O-]S(=O)(=O)SSS([O-])(=O)=O UVTKHPSJNFFIDG-UHFFFAOYSA-L 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical compound OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 claims description 2
- QERYCTSHXKAMIS-UHFFFAOYSA-N thiophene-2-carboxylic acid Chemical compound OC(=O)C1=CC=CS1 QERYCTSHXKAMIS-UHFFFAOYSA-N 0.000 claims description 2
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229940103494 thiosalicylic acid Drugs 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims 1
- 239000003002 pH adjusting agent Substances 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 35
- 239000000243 solution Substances 0.000 description 34
- 229910052707 ruthenium Inorganic materials 0.000 description 28
- 239000003054 catalyst Substances 0.000 description 23
- 229910052763 palladium Inorganic materials 0.000 description 18
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000012190 activator Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- DHCDFWKWKRSZHF-UHFFFAOYSA-N sulfurothioic S-acid Chemical compound OS(O)(=O)=S DHCDFWKWKRSZHF-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002574 poison Substances 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DTXLFYZZTAZUAT-UHFFFAOYSA-N 1,3-thiazole-5-sulfonic acid Chemical compound OS(=O)(=O)C1=CN=CS1 DTXLFYZZTAZUAT-UHFFFAOYSA-N 0.000 description 1
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 1
- GWHKXPQJLHRPOQ-UHFFFAOYSA-N 4-ethyl-2-(1-hydroxyethylsulfanyl)benzoic acid Chemical compound OC(C)SC1=C(C(=O)O)C=CC(=C1)CC GWHKXPQJLHRPOQ-UHFFFAOYSA-N 0.000 description 1
- CHBFUBKXMBQCKO-UHFFFAOYSA-N 5-amino-2-(4-amino-2-sulfophenyl)sulfanylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC(N)=CC=C1SC1=CC=C(N)C=C1S(O)(=O)=O CHBFUBKXMBQCKO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- XYXNTHIYBIDHGM-UHFFFAOYSA-N ammonium thiosulfate Chemical compound [NH4+].[NH4+].[O-]S([O-])(=O)=S XYXNTHIYBIDHGM-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 159000000032 aromatic acids Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- FGRVOLIFQGXPCT-UHFFFAOYSA-L dipotassium;dioxido-oxo-sulfanylidene-$l^{6}-sulfane Chemical compound [K+].[K+].[O-]S([O-])(=O)=S FGRVOLIFQGXPCT-UHFFFAOYSA-L 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000000454 electroless metal deposition Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 150000003555 thioacetals Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1841—Multistep pretreatment with use of metal first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0392—Pretreatment of metal, e.g. before finish plating, etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/072—Electroless plating, e.g. finish plating or initial plating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
Description
a)任意に、めっきされる銅又は銅合金が露出した物品を洗浄及び/又はマイクロエッチングする工程と、
b)銅又は銅合金が露出した物品を、パラジウムを含有しないルテニウム系活性化溶液に浸漬する工程と、
c)物品を、二価の硫黄化合物を含む溶液に浸漬する工程と、
d)物品を、無電解金属めっきする工程と
を順に含み、金属めっきは露出した銅又は銅合金以外の領域では発生しない。
a)任意に、めっきされる銅又は銅合金が露出した物品を洗浄及び/又はマイクロエッチングする工程と、
b)銅又は銅合金が露出した物品を、パラジウムを含有しないルテニウム系活性化溶液に浸漬する工程と、
c)物品を、二価の硫黄化合物を含む溶液に浸漬する工程と、
d)物品を、無電解金属めっきする工程と
を順に含み、金属めっきは露出した銅又は銅合金以外の領域では発生しない。
Claims (16)
- 物品上の露出した銅又は銅合金に金属を無電解めっきする方法であって、
a)前記物品を洗浄及び/又はマイクロエッチングする工程と、
b)前記物品を、ルテニウム金属イオンを含み、パラジウム化合物が存在しない活性化溶液に浸漬する工程と、
c)前記b)工程の後に、前記物品を、二価の硫黄化合物又は二価の硫黄化合物の組合せを含む前処理溶液に浸漬する工程と、
d)前記物品を、無電解金属めっき浴に浸漬する工程と
を含み、
前記二価の硫黄化合物が、前記物品の前記銅又は銅合金に対してめっきが開始される時間を、前記銅又は銅合金をさらに活性化させることにより、短縮させる助けとなることを特徴とする方法。 - 前記前処理溶液における前記二価の硫黄化合物又は二価の硫黄化合物の組合せが、β−チオ−ジプロピオン酸、(メチレン−ジチオ)−二酢酸、3−ヒドロキシ−チオナフテン−2−カルボン酸、2−(α−ヒドロキシ−エチル−チオ)−4−エチル安息香酸、硫化ジラウリル、ジチオジプロピオン酸ジステアリル、チオ安息香酸、1−オクタデカンチオール、S−(2−カルボキシフェニル)−チオグリコール酸、チオウレア、チオジグリコール酸、ジチオジグリコール酸、3−(アミジノチオ)−1−プロパンスルホン酸、チオフェン、2,2’−チオジエタノール、4,4’−ジニトロ−ジフェニル−スルフィド−6,6’−ジスルホン酸、2−(m−アミノフェニル)−7−ヒドロキシ−ナフト−(2,3−d)チアゾール−5−スルホン酸、2−ヒドロキシチオナフテン、2−チオフェンカルボン酸、チオサリチル酸、チオ乳酸、L−システイン、システアミン、チオ二酢酸、テトラチオン酸カリウム、2,2’−チオ−ジ(5−アミノ−ベンゼンスルホン酸)、3−カルボキシメチル−チオ−2−アントラキノンカルボン酸、4−ヒドロキシチオフェノール、(2−ニトロ−4−アセトアミドフェニル−チオ)−酢酸、S(8−クロロ−1−ナフチル)−チオグリコール酸、(p−クロロフェニル−チオ)−酢酸、4−アミノチオフェノール、及び2−アミノチオフェノールから選択される請求項1に記載の方法。
- 前記二価の硫黄化合物又は二価の硫黄化合物の組合せの濃度が、0.1mg/Lから10,000mg/Lである請求項1に記載の方法。
- 前記二価の硫黄化合物又は二価の硫黄化合物の組合せの濃度が、0.5mg/Lから5,000mg/Lである請求項3に記載の方法。
- 前記二価の硫黄化合物又は二価の硫黄化合物の組合せの濃度が、1.0mg/Lから1,000mg/Lである請求項4に記載の方法。
- 前記前処理溶液が、鉱酸をさらに含む請求項1に記載の方法。
- 前記鉱酸が、硫酸である請求項6に記載の方法。
- 前記鉱酸の濃度が、1体積%から20体積%である請求項6に記載の方法。
- 無電解めっき浴における開始時間が、2分間未満である請求項1に記載の方法。
- 無電解めっき浴における開始時間が、1分間未満である請求項9に記載の方法。
- 無電解めっき浴における開始時間が、30秒間未満である請求項10に記載の方法。
- 前記物品には、外部めっき又は架橋が存在しない請求項1に記載の方法。
- 前記前処理溶液が、pH調整剤をさらに含む請求項1に記載の方法。
- 前記前処理溶液が、界面活性剤をさらに含む請求項1に記載の方法。
- 前記前処理溶液が、錯化剤をさらに含む請求項1に記載の方法。
- 無電解金属めっきされる銅又は銅合金の前処理方法であって、
a)前記銅又は銅合金を、ルテニウム金属イオンを含む溶液において活性化する工程と、
b)前記銅又は銅合金を、1以上の二価の硫黄化合物を含む溶液に浸漬する工程と、
c)前記銅又は銅合金を、無電解金属めっき浴に浸漬する工程と
を含むことを特徴とする前処理方法。
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US14/723,562 | 2015-05-28 | ||
US14/723,562 US20160348245A1 (en) | 2015-05-28 | 2015-05-28 | Method of Pretreatment for Electroless Plating |
PCT/US2016/034510 WO2016191632A1 (en) | 2015-05-28 | 2016-05-27 | Method of pretreatment for electroless plating |
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JP2018519419A JP2018519419A (ja) | 2018-07-19 |
JP6464286B2 true JP6464286B2 (ja) | 2019-02-06 |
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EP (1) | EP3297772B1 (ja) |
JP (1) | JP6464286B2 (ja) |
KR (1) | KR102044145B1 (ja) |
CN (1) | CN107635676B (ja) |
ES (1) | ES2778433T3 (ja) |
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EP3452635B1 (en) * | 2016-05-04 | 2020-02-26 | ATOTECH Deutschland GmbH | Process for depositing a metal or metal alloy on a surface of a substrate including its activation |
US10294569B2 (en) * | 2017-10-06 | 2019-05-21 | Rohm And Haas Electronic Materials Llc | Stable electroless copper plating compositions and methods for electroless plating copper on substrates |
US11678433B2 (en) | 2018-09-06 | 2023-06-13 | D-Wave Systems Inc. | Printed circuit board assembly for edge-coupling to an integrated circuit |
US11647590B2 (en) | 2019-06-18 | 2023-05-09 | D-Wave Systems Inc. | Systems and methods for etching of metals |
US12033996B2 (en) | 2019-09-23 | 2024-07-09 | 1372934 B.C. Ltd. | Systems and methods for assembling processor systems |
US20210140052A1 (en) * | 2019-11-11 | 2021-05-13 | Rohm And Haas Electronic Materials Llc | Electroless copper plating and counteracting passivation |
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US5846598A (en) * | 1995-11-30 | 1998-12-08 | International Business Machines Corporation | Electroless plating of metallic features on nonmetallic or semiconductor layer without extraneous plating |
US5843517A (en) * | 1997-04-30 | 1998-12-01 | Macdermid, Incorporated | Composition and method for selective plating |
JP3387507B2 (ja) | 1997-12-18 | 2003-03-17 | 株式会社ジャパンエナジー | 無電解ニッケルめっき用前処理液および前処理方法 |
JP3920462B2 (ja) * | 1998-07-13 | 2007-05-30 | 株式会社大和化成研究所 | 貴金属を化学的還元析出によって得るための水溶液 |
CN1454042A (zh) * | 2002-04-09 | 2003-11-05 | 希普利公司 | 印刷线路板的制造方法 |
JP2006316350A (ja) * | 2005-04-13 | 2006-11-24 | Hitachi Chem Co Ltd | 無電解ニッケルめっき用前処理液および無電解ニッケルめっきの前処理方法 |
US20070004587A1 (en) * | 2005-06-30 | 2007-01-04 | Intel Corporation | Method of forming metal on a substrate using a Ruthenium-based catalyst |
CN1917169A (zh) * | 2005-08-18 | 2007-02-21 | 联华电子股份有限公司 | 以无电镀方式在铜金属上形成阻障层的方法 |
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-
2015
- 2015-05-28 US US14/723,562 patent/US20160348245A1/en not_active Abandoned
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2016
- 2016-05-26 TW TW105116377A patent/TWI609992B/zh active
- 2016-05-27 WO PCT/US2016/034510 patent/WO2016191632A1/en active Application Filing
- 2016-05-27 EP EP16800768.0A patent/EP3297772B1/en active Active
- 2016-05-27 CN CN201680030213.6A patent/CN107635676B/zh active Active
- 2016-05-27 JP JP2017561289A patent/JP6464286B2/ja active Active
- 2016-05-27 ES ES16800768T patent/ES2778433T3/es active Active
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EP3297772A1 (en) | 2018-03-28 |
JP2018519419A (ja) | 2018-07-19 |
CN107635676B (zh) | 2020-09-18 |
WO2016191632A1 (en) | 2016-12-01 |
CN107635676A (zh) | 2018-01-26 |
TWI609992B (zh) | 2018-01-01 |
KR102044145B1 (ko) | 2019-11-13 |
ES2778433T3 (es) | 2020-08-10 |
EP3297772B1 (en) | 2020-01-01 |
KR20180012819A (ko) | 2018-02-06 |
TW201708608A (zh) | 2017-03-01 |
US20160348245A1 (en) | 2016-12-01 |
EP3297772A4 (en) | 2019-01-09 |
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