JP6454611B2 - 基板処理システム及び基板処理方法 - Google Patents
基板処理システム及び基板処理方法 Download PDFInfo
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- JP6454611B2 JP6454611B2 JP2015123461A JP2015123461A JP6454611B2 JP 6454611 B2 JP6454611 B2 JP 6454611B2 JP 2015123461 A JP2015123461 A JP 2015123461A JP 2015123461 A JP2015123461 A JP 2015123461A JP 6454611 B2 JP6454611 B2 JP 6454611B2
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- 238000012545 processing Methods 0.000 title claims description 176
- 239000000758 substrate Substances 0.000 title claims description 87
- 238000003672 processing method Methods 0.000 title claims description 7
- 239000007788 liquid Substances 0.000 claims description 161
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 109
- 238000010438 heat treatment Methods 0.000 claims description 21
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
- 230000003247 decreasing effect Effects 0.000 claims description 18
- 239000000243 solution Substances 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 11
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims 1
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000009835 boiling Methods 0.000 description 23
- 230000036571 hydration Effects 0.000 description 16
- 238000006703 hydration reaction Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
11 基板
12 処理液
14 処理槽
18 排気部
19 圧力センサ
21a、21b カバー部材
26 ヒータ
27 排気制御部
28 加水制御部
31 循環部
38 インラインヒータ
41 排気弁
43 純水供給部
44 給水弁
Claims (5)
- 加熱した水溶液からなる処理液に基板を浸漬することにより基板表面の被膜を除去する基板処理システムにおいて、
前記処理液が貯留され、前記処理液に基板が浸漬される処理槽と、
前記処理槽から排出される前記処理液を前記処理槽に戻す循環部と、
前記処理槽内の前記処理液が目的温度を保つように、前記処理液を加熱する処理液加熱部と、
前記処理槽を密閉する密閉部と、
前記処理槽の内部圧力を測定する圧力センサと、
前記圧力センサで測定される前記内部圧力に基づいて、前記処理槽内から外部へ排出される水蒸気の排気量を増減することによって、前記処理槽の内部圧力を大気圧よりも高い目的圧力に調節する圧力調節部と、
前記循環部を介して前記処理液に純水を連続的に加水するとともに、純水の加水量を前記圧力センサで測定される前記内部圧力に基づいて増減することにより、処理液の濃度を一定に調節する濃度調節部と
を備え、
前記処理槽には、複数枚の前記基板が配列されており、
前記圧力調節部は、前記処理槽に貯蔵された前記処理液の上方の槽内空間に複数枚の前記基板に沿って配され、一端が前記外部に連通した管状の排気部を有し、
前記排気部は、複数枚の前記基板の配列範囲に、前記水蒸気を吸引する複数の開口が形成されていることを特徴とする基板処理システム。 - 前記圧力調節部は、前記排気部に接続された排気弁と、前記圧力センサで測定される前記内部圧力に基づいて、前記排気弁の開度を増減する排気制御部とを有することを特徴とする請求項1に記載の基板処理システム。
- 前記基板は、表面にシリコン酸化膜とシリコン窒化膜とが形成されたシリコンウエハであり、前記処理液は、リン酸水溶液であることを特徴とする請求項1または2に記載の基板処理システム。
- 前記圧力調節部は、前記内部圧力の変動状態に基づいて、前記水蒸気の排気量を増減することを特徴とする請求項1ないし3のいずれか1項に記載の基板処理システム。
- 加熱した水溶液からなる処理液に基板を浸漬することにより基板表面の被膜を除去する基板処理方法において、
処理槽内に貯留された前記処理液に基板を複数枚配列して浸漬する浸漬ステップと、
前記処理槽を密閉する密閉ステップと、
前記処理槽から排出される前記処理液を前記処理槽に戻す循環ステップと、
前記処理槽内の前記処理液を目的温度に保つように、前記処理液を加熱する処理液加熱ステップと、
前記処理槽内から外部へ排出される水蒸気の排気量を前記処理槽の内部圧力に応じて増減し、前記処理槽の内部圧力を大気圧よりも高い目的圧力に調節する圧力調節ステップと、
前記循環ステップによって循環される前記処理液に純水を連続的に加水するとともに、前記処理槽の内部圧力を測定し、純水の加水量を測定した前記内部圧力に基づいて増減することにより、処理液の濃度を調節する濃度調節ステップと
を有し、
前記圧力調節ステップは、前記処理槽に貯留された前記処理液の上方の槽内空間に複数枚の前記基板に沿って配され一端が前記外部に連通した管状の排気部の、複数枚の前記基板の配列範囲に形成された複数の開口から前記水蒸気を吸引し、吸引した前記水蒸気を前記外部へ排出することを特徴とする基板処理方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015123461A JP6454611B2 (ja) | 2015-06-19 | 2015-06-19 | 基板処理システム及び基板処理方法 |
PCT/JP2016/067666 WO2016204143A1 (ja) | 2015-06-19 | 2016-06-14 | 基板処理システム及び基板処理方法 |
KR1020187001291A KR20180017183A (ko) | 2015-06-19 | 2016-06-14 | 기판 처리 시스템 및 기판 처리 방법 |
SG11201710329TA SG11201710329TA (en) | 2015-06-19 | 2016-06-14 | Substrate processing system and substrate processing method |
CN201680029785.2A CN107636807B (zh) | 2015-06-19 | 2016-06-14 | 基板处理系统及基板处理方法 |
US15/737,641 US10186436B2 (en) | 2015-06-19 | 2016-06-14 | Substrate processing system and substrate processing method |
TW105118889A TWI687988B (zh) | 2015-06-19 | 2016-06-16 | 基板處理系統及基板處理方法 |
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JP2015123461A JP6454611B2 (ja) | 2015-06-19 | 2015-06-19 | 基板処理システム及び基板処理方法 |
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JP2017011051A JP2017011051A (ja) | 2017-01-12 |
JP6454611B2 true JP6454611B2 (ja) | 2019-01-16 |
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US (1) | US10186436B2 (ja) |
JP (1) | JP6454611B2 (ja) |
KR (1) | KR20180017183A (ja) |
CN (1) | CN107636807B (ja) |
SG (1) | SG11201710329TA (ja) |
TW (1) | TWI687988B (ja) |
WO (1) | WO2016204143A1 (ja) |
Families Citing this family (11)
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KR102519802B1 (ko) * | 2017-09-04 | 2023-04-10 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 기판 처리 장치의 이상 감시 방법, 및 기록 매체에 저장된 프로그램 |
JP6994899B2 (ja) * | 2017-10-20 | 2022-01-14 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法および記憶媒体 |
JP7198595B2 (ja) * | 2018-05-31 | 2023-01-04 | 東京エレクトロン株式会社 | 基板液処理方法、基板液処理装置及び記憶媒体 |
KR102461911B1 (ko) * | 2018-07-13 | 2022-10-31 | 삼성전자주식회사 | 플라즈마 제네레이터, 이를 포함하는 세정수 처리 장치, 반도체 세정 장치 및 세정수 처리 방법 |
US11532493B2 (en) * | 2018-07-30 | 2022-12-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet bench and chemical treatment method using the same |
JP2021034561A (ja) | 2019-08-23 | 2021-03-01 | キオクシア株式会社 | 半導体製造装置 |
JP7413113B2 (ja) | 2020-03-24 | 2024-01-15 | 株式会社Screenホールディングス | 処理液温調方法、基板処理方法、処理液温調装置、及び、基板処理システム |
KR102646484B1 (ko) * | 2020-12-29 | 2024-03-12 | 세메스 주식회사 | 약액 공급 장치 및 이를 포함하는 기판 처리 장치 |
CN113964067B (zh) * | 2021-11-26 | 2022-10-25 | 江苏威森美微电子有限公司 | 一种晶圆刻蚀设备 |
DE102022124098A1 (de) * | 2022-09-20 | 2024-03-21 | Rösler Holding Gmbh | Verfahren und Vorrichtung zum chemischen Glätten |
CN115376915A (zh) * | 2022-10-27 | 2022-11-22 | 合肥新晶集成电路有限公司 | 选择性蚀刻方法及装置 |
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JPH0448630A (ja) * | 1990-06-14 | 1992-02-18 | Sony Corp | エッチング方法 |
JPH0799175A (ja) * | 1993-06-04 | 1995-04-11 | Nippon Steel Corp | 処理液の供給方法及び供給装置 |
JPH11226387A (ja) * | 1998-02-13 | 1999-08-24 | Karasawa Fine:Kk | 流体による処理方法および装置 |
JPH11253894A (ja) * | 1998-03-16 | 1999-09-21 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US6167891B1 (en) * | 1999-05-25 | 2001-01-02 | Infineon Technologies North America Corp. | Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers |
TW512131B (en) * | 2000-06-08 | 2002-12-01 | Mosel Vitelic Inc | Apparatus and method for controlling boiling conditions of hot phosphoric acid solution with pressure adjustment |
JP3891776B2 (ja) | 2000-11-20 | 2007-03-14 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2003266033A (ja) * | 2002-03-15 | 2003-09-24 | Seiko Epson Corp | 洗浄方法及び洗浄装置 |
EP2055411A1 (de) * | 2007-11-02 | 2009-05-06 | TSW Trierer Stahlwerk GmbH | Vorrichtung und Verfahren zum Stanggießen von Stahl |
WO2010073141A1 (en) * | 2008-12-22 | 2010-07-01 | Koninklijke Philips Electronics, N.V. | Liquid oxygen production device and method |
CN102206028B (zh) * | 2011-03-28 | 2013-01-02 | 上海百泉生物技术有限公司 | 一种全自动沼气生产净化装置及其应用 |
US10964559B2 (en) * | 2014-06-30 | 2021-03-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer etching apparatus and method for controlling etch bath of wafer |
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- 2016-06-14 SG SG11201710329TA patent/SG11201710329TA/en unknown
- 2016-06-14 US US15/737,641 patent/US10186436B2/en not_active Expired - Fee Related
- 2016-06-14 KR KR1020187001291A patent/KR20180017183A/ko active IP Right Grant
- 2016-06-14 CN CN201680029785.2A patent/CN107636807B/zh active Active
- 2016-06-14 WO PCT/JP2016/067666 patent/WO2016204143A1/ja active Application Filing
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Also Published As
Publication number | Publication date |
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CN107636807A (zh) | 2018-01-26 |
JP2017011051A (ja) | 2017-01-12 |
TWI687988B (zh) | 2020-03-11 |
WO2016204143A1 (ja) | 2016-12-22 |
TW201717272A (zh) | 2017-05-16 |
US10186436B2 (en) | 2019-01-22 |
US20180158700A1 (en) | 2018-06-07 |
KR20180017183A (ko) | 2018-02-20 |
SG11201710329TA (en) | 2018-01-30 |
CN107636807B (zh) | 2021-06-04 |
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