JP6422310B2 - 薄膜トランジスタ基板、その製造方法、及び、液晶表示装置 - Google Patents

薄膜トランジスタ基板、その製造方法、及び、液晶表示装置 Download PDF

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JP6422310B2
JP6422310B2 JP2014229474A JP2014229474A JP6422310B2 JP 6422310 B2 JP6422310 B2 JP 6422310B2 JP 2014229474 A JP2014229474 A JP 2014229474A JP 2014229474 A JP2014229474 A JP 2014229474A JP 6422310 B2 JP6422310 B2 JP 6422310B2
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electrode
transistor substrate
film
thin film
film transistor
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JP2016096171A5 (enExample
JP2016096171A (ja
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貴治 木稲
貴治 木稲
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2014229474A priority Critical patent/JP6422310B2/ja
Priority to US14/884,050 priority patent/US9553109B2/en
Publication of JP2016096171A publication Critical patent/JP2016096171A/ja
Priority to US15/372,671 priority patent/US9941409B2/en
Publication of JP2016096171A5 publication Critical patent/JP2016096171A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
JP2014229474A 2014-11-12 2014-11-12 薄膜トランジスタ基板、その製造方法、及び、液晶表示装置 Active JP6422310B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014229474A JP6422310B2 (ja) 2014-11-12 2014-11-12 薄膜トランジスタ基板、その製造方法、及び、液晶表示装置
US14/884,050 US9553109B2 (en) 2014-11-12 2015-10-15 Thin film transistor substrate, method for manufacturing the same, and liquid crystal display
US15/372,671 US9941409B2 (en) 2014-11-12 2016-12-08 Method for manufacturing a thin film transistor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014229474A JP6422310B2 (ja) 2014-11-12 2014-11-12 薄膜トランジスタ基板、その製造方法、及び、液晶表示装置

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JP2016096171A5 JP2016096171A5 (enExample) 2017-12-21
JP6422310B2 true JP6422310B2 (ja) 2018-11-14

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JP (1) JP6422310B2 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409415B (zh) * 2014-12-03 2017-03-15 重庆京东方光电科技有限公司 一种阵列基板及其制备方法、显示装置
JP6689108B2 (ja) * 2016-03-22 2020-04-28 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
CN107146818B (zh) * 2017-06-27 2020-02-18 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法、阵列基板及显示装置

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPS62235784A (ja) 1986-04-07 1987-10-15 Sharp Corp 薄膜トランジスタの製造方法
US6449026B1 (en) 1999-06-25 2002-09-10 Hyundai Display Technology Inc. Fringe field switching liquid crystal display and method for manufacturing the same
JP4483235B2 (ja) 2003-09-01 2010-06-16 カシオ計算機株式会社 トランジスタアレイ基板の製造方法及びトランジスタアレイ基板
JP5006598B2 (ja) 2005-09-16 2012-08-22 キヤノン株式会社 電界効果型トランジスタ
TWI318010B (en) * 2006-11-09 2009-12-01 Au Optronics Corp Pixel structure and fabricating method thereof
JP4496237B2 (ja) * 2007-05-14 2010-07-07 株式会社 日立ディスプレイズ 液晶表示装置
JP5095865B2 (ja) 2009-12-21 2012-12-12 シャープ株式会社 アクティブマトリクス基板及びそれを備えた表示パネル、並びにアクティブマトリクス基板の製造方法
KR20120024241A (ko) * 2010-09-06 2012-03-14 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
US8940566B2 (en) * 2010-11-04 2015-01-27 Sharp Kabushiki Kaisha Semiconductor device, display device, and production method for semiconductor device and display device
KR20120060664A (ko) * 2010-12-02 2012-06-12 삼성전자주식회사 표시 장치 및 표시 장치 제조 방법
JP6076626B2 (ja) * 2012-06-14 2017-02-08 株式会社ジャパンディスプレイ 表示装置及びその製造方法
JP6103854B2 (ja) * 2012-08-10 2017-03-29 三菱電機株式会社 薄膜トランジスタ基板
JP6124668B2 (ja) * 2013-04-26 2017-05-10 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
CN105390504B (zh) * 2014-08-29 2019-02-01 乐金显示有限公司 薄膜晶体管基板及使用它的显示装置

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US20160133649A1 (en) 2016-05-12
US9941409B2 (en) 2018-04-10
US9553109B2 (en) 2017-01-24
US20170092775A1 (en) 2017-03-30
JP2016096171A (ja) 2016-05-26

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