JP6389449B2 - 研磨装置 - Google Patents
研磨装置 Download PDFInfo
- Publication number
- JP6389449B2 JP6389449B2 JP2015163908A JP2015163908A JP6389449B2 JP 6389449 B2 JP6389449 B2 JP 6389449B2 JP 2015163908 A JP2015163908 A JP 2015163908A JP 2015163908 A JP2015163908 A JP 2015163908A JP 6389449 B2 JP6389449 B2 JP 6389449B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- waste liquid
- abrasive
- liquid receiver
- surface plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 138
- 239000007788 liquid Substances 0.000 claims description 79
- 239000002699 waste material Substances 0.000 claims description 77
- 239000004744 fabric Substances 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 description 24
- 235000012431 wafers Nutrition 0.000 description 22
- 239000000243 solution Substances 0.000 description 21
- 238000011084 recovery Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
本発明の研磨装置を用いて研磨剤を循環させ再使用しながら、直径300mmのシリコンウェーハの研磨を行った。また、研磨装置は、3つの定盤を有し、1定盤当たり2つの研磨ヘッドを持つインデックス方式の研磨装置を用いた。定盤の直径は800mmであった。
条件1では、タンク内の研磨剤量が低下しないようなタイミングで、セパレーターのライン切り換えを行った。この条件では、研磨剤に純水が混合し、研磨剤が希釈され、研磨レートが低下しやすい。研磨レートの変動を調べたところ、図4に示すように、実施例では、研磨レートの低下は7%に抑制された。なお、図4では、各バッチの研磨レートは、1バッチ目の研磨レートに対する相対値としている。
また、条件2では、研磨剤に純水が混合しないタイミングでセパレーターの切り換えを行った。この条件では、研磨剤の排出量が増加しやすい。10バッチの連続研磨後のスラリータンクの残量から、排出量を求めた。その結果、図5に示すように、実施例の研磨剤の排出量は38%となった。
廃液受けを定盤に固定していない従来の研磨装置を用いたこと以外、実施例と同様な条件で実施例と同様に研磨レート及び研磨剤の排出量を評価した。比較例で用いた研磨装置は、図6、7に示すように、廃液受け107が、定盤103に固定されていないため、定盤103の揺動により廃液受け107と定盤103の相対位置が変化する。よって、定盤位置に関わらず研磨剤を回収するためには、廃液受けの面積を大きくすることが必須である。比較例における定盤サイズと揺動幅の場合を考慮した結果、廃液受けの面積(平面占有面積)は307.3mm2となった。揺動幅の問題で、これ以上面積を小さくすることはできなかった。なお、実施例と同様に、研磨液の混合を抑制し、回収効率を改善するため、廃液受け内部に傾斜を設けている。
4…研磨ヘッド、 5…タンク、 6…研磨剤供給機構、
7…廃液受け、 7a…底板、7b…側板、
8…循環機構、 9…廃液トレイ、 10…廃液回収ライン、
11…セパレーター、 12…ポンプ、
W…ウェーハ。
Claims (2)
- 研磨布が貼り付けられた定盤と、ウェーハを保持するための研磨ヘッドと、研磨剤を貯蔵するためのタンクと、該タンク内に貯蔵された研磨剤を前記研磨布に供給する研磨剤供給機構と、前記定盤上から流下する研磨剤を回収する廃液受けと、該廃液受けに接続され、前記廃液受けで回収した研磨剤を前記タンク内に供給する循環機構を具備し、前記研磨剤供給機構で前記タンク内から前記研磨剤を前記研磨布に供給し、前記定盤上から流下する使用済みの研磨剤を前記廃液受けで回収し、該回収した研磨剤を前記タンク内に供給することで前記研磨剤を循環させながら、前記研磨ヘッドで保持した前記ウェーハの表面を前記研磨布に摺接させて研磨を行う研磨装置であって、
前記廃液受けが、前記定盤に固定されたもので、底板及び側板から成るものであり、前記側板が取り外し可能なものであることを特徴とする研磨装置。 - 前記廃液受けが、前記定盤の側面を囲むリング状のものであることを特徴とする請求項1に記載の研磨装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015163908A JP6389449B2 (ja) | 2015-08-21 | 2015-08-21 | 研磨装置 |
SG11201800897PA SG11201800897PA (en) | 2015-08-21 | 2016-08-03 | Polishing apparatus |
KR1020187004634A KR102550998B1 (ko) | 2015-08-21 | 2016-08-03 | 연마 장치 |
US15/750,329 US10850365B2 (en) | 2015-08-21 | 2016-08-03 | Polishing apparatus with a waste liquid receiver |
PCT/JP2016/003575 WO2017033409A1 (ja) | 2015-08-21 | 2016-08-03 | 研磨装置 |
CN201680047958.3A CN107921605A (zh) | 2015-08-21 | 2016-08-03 | 研磨装置 |
DE112016003354.0T DE112016003354T5 (de) | 2015-08-21 | 2016-08-03 | Poliervorrichtung |
TW105125238A TWI715606B (zh) | 2015-08-21 | 2016-08-09 | 研磨裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015163908A JP6389449B2 (ja) | 2015-08-21 | 2015-08-21 | 研磨装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017039193A JP2017039193A (ja) | 2017-02-23 |
JP6389449B2 true JP6389449B2 (ja) | 2018-09-12 |
Family
ID=58099645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015163908A Active JP6389449B2 (ja) | 2015-08-21 | 2015-08-21 | 研磨装置 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10850365B2 (ja) |
JP (1) | JP6389449B2 (ja) |
KR (1) | KR102550998B1 (ja) |
CN (1) | CN107921605A (ja) |
DE (1) | DE112016003354T5 (ja) |
SG (1) | SG11201800897PA (ja) |
TW (1) | TWI715606B (ja) |
WO (1) | WO2017033409A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7019184B2 (ja) * | 2018-07-17 | 2022-02-15 | スピードファム株式会社 | 処理液切換装置 |
KR102308092B1 (ko) * | 2020-03-06 | 2021-10-05 | 넥센타이어 주식회사 | 타이어의 마모 측정 장치 |
Family Cites Families (26)
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GB1261131A (en) * | 1969-06-06 | 1972-01-19 | Burmah Oil Trading Ltd | Improvements in or relating to lapping machines |
US4869779A (en) * | 1987-07-27 | 1989-09-26 | Acheson Robert E | Hydroplane polishing device and method |
JP3502124B2 (ja) * | 1993-07-20 | 2004-03-02 | スピードファム株式会社 | 研磨液飛散防止機構付き平面研磨装置 |
JP2606156B2 (ja) * | 1994-10-14 | 1997-04-30 | 栗田工業株式会社 | 研磨剤粒子の回収方法 |
US5658185A (en) * | 1995-10-25 | 1997-08-19 | International Business Machines Corporation | Chemical-mechanical polishing apparatus with slurry removal system and method |
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KR100540367B1 (ko) * | 1997-12-26 | 2006-01-10 | 가부시키가이샤 에바라 세이사꾸쇼 | 연마장치 및 연마방법 |
JPH11254298A (ja) * | 1998-03-06 | 1999-09-21 | Speedfam Co Ltd | スラリー循環供給式平面研磨装置 |
JPH11277434A (ja) | 1998-03-30 | 1999-10-12 | Speedfam Co Ltd | Cmp装置のスラリリサイクルシステム及びその方法 |
JPH11320406A (ja) * | 1998-05-06 | 1999-11-24 | Speedfam-Ipec Co Ltd | 研磨装置における排液・排気の処理方法及び装置 |
TW504776B (en) * | 1999-09-09 | 2002-10-01 | Mimasu Semiconductor Ind Co | Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism |
JP4657412B2 (ja) | 1999-12-10 | 2011-03-23 | エルエスアイ コーポレーション | 半導体ウェハを研磨する装置及び方法 |
US6705930B2 (en) * | 2000-01-28 | 2004-03-16 | Lam Research Corporation | System and method for polishing and planarizing semiconductor wafers using reduced surface area polishing pads and variable partial pad-wafer overlapping techniques |
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JP3852758B2 (ja) * | 2002-03-01 | 2006-12-06 | インターナショナル・ビジネス・マシーンズ・コーポレーション | スラリー回収装置及びその方法 |
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JP3889744B2 (ja) * | 2003-12-05 | 2007-03-07 | 株式会社東芝 | 研磨ヘッドおよび研磨装置 |
JP2007088398A (ja) * | 2004-12-14 | 2007-04-05 | Realize Advanced Technology Ltd | 洗浄装置、この洗浄装置を用いた洗浄システム、及び被洗浄基板の洗浄方法 |
JP5263657B2 (ja) * | 2008-04-09 | 2013-08-14 | 株式会社ニコン | 研磨装置 |
EP2372749B1 (de) * | 2010-03-31 | 2021-09-29 | Levitronix GmbH | Behandlungsvorrichtung zur Behandlung einer Oberfläche eines Körpers |
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JP6792363B2 (ja) * | 2016-07-22 | 2020-11-25 | 株式会社ディスコ | 研削装置 |
-
2015
- 2015-08-21 JP JP2015163908A patent/JP6389449B2/ja active Active
-
2016
- 2016-08-03 US US15/750,329 patent/US10850365B2/en active Active
- 2016-08-03 SG SG11201800897PA patent/SG11201800897PA/en unknown
- 2016-08-03 WO PCT/JP2016/003575 patent/WO2017033409A1/ja active Application Filing
- 2016-08-03 KR KR1020187004634A patent/KR102550998B1/ko active IP Right Grant
- 2016-08-03 CN CN201680047958.3A patent/CN107921605A/zh active Pending
- 2016-08-03 DE DE112016003354.0T patent/DE112016003354T5/de active Pending
- 2016-08-09 TW TW105125238A patent/TWI715606B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20180042250A (ko) | 2018-04-25 |
TWI715606B (zh) | 2021-01-11 |
KR102550998B1 (ko) | 2023-07-04 |
JP2017039193A (ja) | 2017-02-23 |
US20180222008A1 (en) | 2018-08-09 |
US10850365B2 (en) | 2020-12-01 |
DE112016003354T5 (de) | 2018-04-05 |
CN107921605A (zh) | 2018-04-17 |
TW201713461A (zh) | 2017-04-16 |
WO2017033409A1 (ja) | 2017-03-02 |
SG11201800897PA (en) | 2018-03-28 |
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