JP6374564B2 - 分布ブラッグ反射器を有する発光ダイオードチップ、及び分布ブラッグ反射器を有する発光ダイオードパッケージ - Google Patents
分布ブラッグ反射器を有する発光ダイオードチップ、及び分布ブラッグ反射器を有する発光ダイオードパッケージ Download PDFInfo
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- 239000010410 layer Substances 0.000 claims description 251
- 239000000463 material Substances 0.000 claims description 146
- 239000000758 substrate Substances 0.000 claims description 114
- 230000003287 optical effect Effects 0.000 claims description 55
- 239000004065 semiconductor Substances 0.000 claims description 36
- 230000003746 surface roughness Effects 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 description 36
- 229910052594 sapphire Inorganic materials 0.000 description 26
- 239000010980 sapphire Substances 0.000 description 26
- 239000012788 optical film Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 15
- 238000002310 reflectometry Methods 0.000 description 15
- 239000002002 slurry Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 238000000869 ion-assisted deposition Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Planar Illumination Modules (AREA)
Description
ブラッグ反射器を形成して測定した反射率を示す。
面積は300×300μm2以上、または1×1mm2以上であってもよい。発光ダイオードチップに、分布ブラッグ反射器をより広い面積に形成することにより、本発明は効果的となる。
thickness)を有する第1材料層と第2光学的膜厚を有する第2材料層との対を複数個と、第3光学的膜厚を有する第3材料層と第4光学膜厚を有する第4材料層との対を複数個含んでもよい。ここで、前記第1材料層の屈折率は前記第2材料層の屈折率と異なっており、前記第3材料層の屈折率は前記第4材料層の屈折率と異なっている。
折率を有することができる。例えば、前記第1材料層40a及び第3材料層50aはTiO2(n:約2.5)で形成することができ、前記第2材料層40b及び第4材料層50bはSiO2(n:約1.5)で形成することができる。
の光学的厚さと実質的に整数倍の関係を有することができ、これらの光学的厚さは実質的に互いに同一とすることができる。
もっと厚くすることができる。前記第1から第4材料層40a、40b、50a、50bの光学的厚さは各材料層の屈折率及び/または実際の厚さを調節して制御することができる。
分布ブラッグ反射器を形成する基板表面の状態は分布ブラッグ反射器の反射率に影響を与え得る。以下、基板表面の状態が分布ブラッグ反射器の反射率に影響を与えることを確認するために実施された実験例を説明する。
Claims (18)
- 基板と、
前記基板の上部に位置し、第1導電型半導体層と第2導電型半導体層の間に配置された活性層を含む発光構造体と、
前記発光構造体から放出された光を反射する分布ブラッグ反射器と、を含み、
前記分布ブラッグ反射器は、
第1光学的厚さを有する第1材料層と第2光学的厚さを有する第2材料層との対の複数個、及び
第3光学的厚さを有する第3材料層と第4光学的厚さを有する第4材料層と対の複数個を含み、
前記第1材料層の屈折率は前記第2材料層の屈折率と異なり、前記第3材料層の屈折率は前記第4材料層の屈折率と異なり、
前記第1材料層及び第2材料層の対の複数個と、前記第3材料層及び第4材料層の対の複数個とが互いに混在しており、
前記分布ブラッグ反射器は青色波長領域の第1波長の光、緑波長領域の第2波長の光及び赤色波長領域の第3波長の光に対して90%以上の反射率を有する発光ダイオードチップ。 - 前記分布ブラッグ反射器は前記基板の下部に位置する請求項1に記載の発光ダイオードチップ。
- 前記分布ブラッグ反射器は前記基板の下部面と接触して位置する請求項2に記載の発光ダイオードチップ。
- 前記基板の下部面はその表面粗さが3μm以下である請求項2に記載の発光ダイオードチップ。
- 前記基板の裏面は表面粗さが2nm以下のRMS値を有する請求項4に記載の発光ダイオードチップ。
- 前記基板の裏面は表面粗さが1nm以下のRMS値を有する請求項5に記載の発光ダイオードチップ。
- 前記基板はPSSである請求項1に記載の発光ダイオードチップ。
- 前記基板はその面積が90、000μm2以上である請求項1に記載の発光ダイオード
チップ。 - 前記基板上に複数個の発光セルを含む請求項8に記載の発光ダイオードチップ。
- 前記複数個の発光セルが直列連結された少なくとも一つの発光セルアレイを含む請求項9に記載の発光ダイオードチップ。
- 前記第1材料層は前記第3材料層と、そして前記第2材料層は前記第4材料層と同一の屈折率を有する請求項1に記載の発光ダイオードチップ。
- 前記第1光学的厚さが前記第3光学的厚さに比べてより厚く、前記第2光学的厚さが前記第4光学的厚さに比べてより厚い請求項1に記載の発光ダイオードチップ。
- 前記第1光学的厚さと第2光学的厚さは互いに同一であり、前記第3光学的厚さと第4光学的厚さは互いに同一である請求項1に記載の発光ダイオードチップ。
- 前記分布ブラッグ反射器上に位置する反射金属層または保護層をさらに含む請求項1に
記載の発光ダイオードチップ - 発光ダイオードチップを実装するための実装面と、
前記実装面上に実装された発光ダイオードチップと、
前記発光ダイオードチップから放出された光の少なくとも一部を反射させる反射面と、を含み、
前記反射面の少なくとも一部には、青色波長領域の第1波長の光、緑色波長領域の第2波長の光及び赤色波長領域の第3波長の光に対して90%以上の反射率を有する分布ブラッグ反射器が設けられ、
前記分布ブラッグ反射器は、
第1光学的厚さを有する第1材料層と第2光学的厚さを有する第2材料層との対の複数個、及び
第3光学的厚さを有する第3材料層と第4光学的厚さを有する第4材料層と対の複数個を含み、
前記第1材料層の屈折率は前記第2材料層の屈折率と異なり、前記第3材料層の屈折率は前記第4材料層の屈折率と異なり、
前記第1材料層及び第2材料層の対の複数個と、前記第3材料層及び第4材料層の対の複数個とが互いに混在している発光ダイオードパッケージ。 - 前記第1材料層は前記第3材料層と、そして前記第2材料層は前記第4材料層と同一の屈折率を有する請求項15に記載の発光ダイオードパッケージ。
- 前記第1光学的厚さが前記第3光学的厚さに比べてより厚く、前記第2光学的厚さが前記第4光学的厚さに比べてより厚い請求項15に記載の発光ダイオードパッケージ。
- 前記第1光学的厚さと第2光学的厚さは互いに同一であり、前記第3光学的厚さと第4光学的厚さは互いに同一である請求項15に記載の発光ダイオードパッケージ。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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KR10-2009-0109870 | 2009-11-13 | ||
KR1020090109870A KR20110053064A (ko) | 2009-11-13 | 2009-11-13 | 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지 |
KR10-2010-0013166 | 2010-02-12 | ||
KR20100013166 | 2010-02-12 |
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JP2015204069A Withdrawn JP2016027672A (ja) | 2009-11-13 | 2015-10-15 | 分布ブラッグ反射器を有する発光ダイオードチップ、その製造方法及び分布ブラッグ反射器を有する発光ダイオードパッケージ |
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US (1) | US8907360B2 (ja) |
EP (2) | EP2362453B1 (ja) |
JP (3) | JP2011109094A (ja) |
CN (3) | CN104795473B (ja) |
TW (1) | TWI531088B (ja) |
WO (1) | WO2011059173A2 (ja) |
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US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
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DE112011102506B4 (de) * | 2010-07-28 | 2021-03-25 | Seoul Viosys Co., Ltd. | Lichtemittierende Diode und lichtemittierende Diodeneinheit |
JP5877992B2 (ja) * | 2010-10-25 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR101769075B1 (ko) * | 2010-12-24 | 2017-08-18 | 서울바이오시스 주식회사 | 발광 다이오드 칩 및 그것을 제조하는 방법 |
US8953120B2 (en) | 2011-01-07 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
CN105118903A (zh) * | 2011-06-16 | 2015-12-02 | 晶元光电股份有限公司 | 发光元件 |
DE202011050976U1 (de) * | 2011-08-12 | 2012-11-15 | Alanod Aluminium-Veredlung Gmbh & Co. Kg | Hochreflektierendes Trägermaterial für lichtemittierende Dioden und lichtemittierende Vorrichtung mit einem derartigen Trägermaterial |
CN102544336A (zh) * | 2011-08-20 | 2012-07-04 | 中国科学院福建物质结构研究所 | 一种可见光全光谱高反射率led封装结构 |
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- 2010-08-13 TW TW099127122A patent/TWI531088B/zh active
- 2010-09-15 WO PCT/KR2010/006315 patent/WO2011059173A2/en active Application Filing
- 2010-09-16 EP EP10177001.4A patent/EP2362453B1/en active Active
- 2010-09-16 EP EP17153368.0A patent/EP3190634B1/en active Active
- 2010-11-02 US US12/917,937 patent/US8907360B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
WO2011059173A3 (en) | 2011-09-29 |
TW201130165A (en) | 2011-09-01 |
CN104795473A (zh) | 2015-07-22 |
TWI531088B (zh) | 2016-04-21 |
EP2362453A2 (en) | 2011-08-31 |
JP2017126792A (ja) | 2017-07-20 |
CN102074622A (zh) | 2011-05-25 |
EP2362453A3 (en) | 2014-03-26 |
CN102074622B (zh) | 2015-05-20 |
EP2362453B1 (en) | 2017-03-08 |
US20110114969A1 (en) | 2011-05-19 |
WO2011059173A2 (en) | 2011-05-19 |
JP2011109094A (ja) | 2011-06-02 |
JP2016027672A (ja) | 2016-02-18 |
EP3190634B1 (en) | 2020-06-17 |
EP3190634A1 (en) | 2017-07-12 |
CN104795473B (zh) | 2018-02-02 |
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CN104795483A (zh) | 2015-07-22 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |