JP6373702B2 - 半導体パワーモジュール及び半導体駆動装置 - Google Patents

半導体パワーモジュール及び半導体駆動装置 Download PDF

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Publication number
JP6373702B2
JP6373702B2 JP2014196129A JP2014196129A JP6373702B2 JP 6373702 B2 JP6373702 B2 JP 6373702B2 JP 2014196129 A JP2014196129 A JP 2014196129A JP 2014196129 A JP2014196129 A JP 2014196129A JP 6373702 B2 JP6373702 B2 JP 6373702B2
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JP
Japan
Prior art keywords
terminal
main
switching element
mutual inductance
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014196129A
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English (en)
Japanese (ja)
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JP2016066974A (ja
JP2016066974A5 (enrdf_load_stackoverflow
Inventor
敬介 堀内
敬介 堀内
政光 稲葉
政光 稲葉
大助 川瀬
大助 川瀬
克明 齊藤
克明 齊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Power Semiconductor Device Ltd filed Critical Hitachi Ltd
Priority to JP2014196129A priority Critical patent/JP6373702B2/ja
Priority to DE112015003784.5T priority patent/DE112015003784B4/de
Priority to PCT/JP2015/075728 priority patent/WO2016047455A1/ja
Publication of JP2016066974A publication Critical patent/JP2016066974A/ja
Publication of JP2016066974A5 publication Critical patent/JP2016066974A5/ja
Application granted granted Critical
Publication of JP6373702B2 publication Critical patent/JP6373702B2/ja
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch

Landscapes

  • Inverter Devices (AREA)
  • Electronic Switches (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)
JP2014196129A 2014-09-26 2014-09-26 半導体パワーモジュール及び半導体駆動装置 Active JP6373702B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2014196129A JP6373702B2 (ja) 2014-09-26 2014-09-26 半導体パワーモジュール及び半導体駆動装置
DE112015003784.5T DE112015003784B4 (de) 2014-09-26 2015-09-10 Halbleiter-Leistungsmodul und Halbleiteransteuerungsvorrichtung
PCT/JP2015/075728 WO2016047455A1 (ja) 2014-09-26 2015-09-10 半導体パワーモジュール及び半導体駆動装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014196129A JP6373702B2 (ja) 2014-09-26 2014-09-26 半導体パワーモジュール及び半導体駆動装置

Publications (3)

Publication Number Publication Date
JP2016066974A JP2016066974A (ja) 2016-04-28
JP2016066974A5 JP2016066974A5 (enrdf_load_stackoverflow) 2017-03-09
JP6373702B2 true JP6373702B2 (ja) 2018-08-15

Family

ID=55580982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014196129A Active JP6373702B2 (ja) 2014-09-26 2014-09-26 半導体パワーモジュール及び半導体駆動装置

Country Status (3)

Country Link
JP (1) JP6373702B2 (enrdf_load_stackoverflow)
DE (1) DE112015003784B4 (enrdf_load_stackoverflow)
WO (1) WO2016047455A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11776892B2 (en) 2020-03-24 2023-10-03 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3442019A4 (en) 2016-04-06 2019-12-04 Shindengen Electric Manufacturing Co., Ltd. POWER MODULE
JP6667630B2 (ja) * 2016-06-22 2020-03-18 株式会社日立産機システム 電力変換装置
JP2018200953A (ja) 2017-05-26 2018-12-20 ルネサスエレクトロニクス株式会社 電子装置
JP6815517B2 (ja) * 2017-08-03 2021-01-20 株式会社日立製作所 電力変換装置および電力変換装置を搭載した車両
JP2021083262A (ja) * 2019-11-21 2021-05-27 株式会社デンソー インバータ装置
CN111416520B (zh) * 2020-02-25 2022-03-18 厦门大学 基于磁通相消的同步整流占空比丢失补偿方法与变换器
JP7407675B2 (ja) * 2020-08-18 2024-01-04 株式会社 日立パワーデバイス パワー半導体モジュールおよび電力変換装置
JP2023081134A (ja) 2021-11-30 2023-06-09 富士電機株式会社 半導体モジュール、半導体装置、及び車両
JP2023109317A (ja) 2022-01-27 2023-08-08 株式会社 日立パワーデバイス パワー半導体モジュール
JP2023140611A (ja) * 2022-03-23 2023-10-05 株式会社 日立パワーデバイス 半導体装置、電力変換装置
JPWO2023233536A1 (enrdf_load_stackoverflow) * 2022-05-31 2023-12-07
DE112023000749T5 (de) 2022-10-13 2024-11-14 Fuji Electric Co., Ltd. Halbleitermodul
JP2025043923A (ja) * 2023-09-19 2025-04-01 株式会社東芝 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098620A (ja) * 1995-06-20 1997-01-10 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタの過電流保護回路
JP3454186B2 (ja) * 1999-05-14 2003-10-06 株式会社日立製作所 電力変換装置
JP2007259533A (ja) * 2006-03-22 2007-10-04 Hitachi Ltd 半導体素子の保護回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11776892B2 (en) 2020-03-24 2023-10-03 Kabushiki Kaisha Toshiba Semiconductor device
US12165965B2 (en) 2020-03-24 2024-12-10 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JP2016066974A (ja) 2016-04-28
WO2016047455A1 (ja) 2016-03-31
DE112015003784B4 (de) 2024-12-12
DE112015003784T5 (de) 2017-06-01

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