JP6352611B2 - プラズマエッチングの方法 - Google Patents

プラズマエッチングの方法 Download PDF

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Publication number
JP6352611B2
JP6352611B2 JP2013207997A JP2013207997A JP6352611B2 JP 6352611 B2 JP6352611 B2 JP 6352611B2 JP 2013207997 A JP2013207997 A JP 2013207997A JP 2013207997 A JP2013207997 A JP 2013207997A JP 6352611 B2 JP6352611 B2 JP 6352611B2
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Japan
Prior art keywords
etching
gas
fluorine
mask
silicon carbide
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Japanese (ja)
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JP2014078712A (ja
Inventor
ヒューマ　アシュラフ
アシュラフ ヒューマ
バーカー アンソニー
バーカー アンソニー
Original Assignee
エスピーティーエス テクノロジーズ リミティド
エスピーティーエス テクノロジーズ リミティド
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2013207997A 2012-10-03 2013-10-03 プラズマエッチングの方法 Active JP6352611B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201261709259P 2012-10-03 2012-10-03
US61/709,259 2012-10-03
GB1217712.7 2012-10-03
GBGB1217712.7A GB201217712D0 (en) 2012-10-03 2012-10-03 methods of plasma etching

Publications (2)

Publication Number Publication Date
JP2014078712A JP2014078712A (ja) 2014-05-01
JP6352611B2 true JP6352611B2 (ja) 2018-07-04

Family

ID=47225628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013207997A Active JP6352611B2 (ja) 2012-10-03 2013-10-03 プラズマエッチングの方法

Country Status (7)

Country Link
US (1) US9040427B2 (zh)
EP (1) EP2717298B1 (zh)
JP (1) JP6352611B2 (zh)
KR (1) KR102225475B1 (zh)
CN (1) CN103794489B (zh)
GB (1) GB201217712D0 (zh)
TW (1) TWI602242B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049725B1 (en) * 2014-05-29 2021-06-29 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into silicon carbide and gallium nitride
DE102015101966B4 (de) * 2015-02-11 2021-07-08 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements mit Schottkykontakt und Halbleiterbauelement
GB201502453D0 (en) * 2015-02-13 2015-04-01 Spts Technologies Ltd Plasma producing apparatus
JP6579786B2 (ja) * 2015-04-17 2019-09-25 株式会社日立ハイテクノロジーズ プラズマエッチング方法
CN111128717B (zh) * 2018-10-30 2022-10-04 株洲中车时代半导体有限公司 一种碳化硅沟槽结构的制造方法
GB201919215D0 (en) 2019-12-23 2020-02-05 Spts Technologies Ltd Method and apparatus for plasma etching

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5571374A (en) * 1995-10-02 1996-11-05 Motorola Method of etching silicon carbide
US6410437B1 (en) 2000-06-30 2002-06-25 Lam Research Corporation Method for etching dual damascene structures in organosilicate glass
JP2005056868A (ja) * 2001-06-04 2005-03-03 Matsushita Electric Ind Co Ltd 炭化珪素半導体装置の製造方法
CN101667536B (zh) * 2001-08-31 2012-07-04 东京毅力科创株式会社 被处理体的蚀刻方法
US6930048B1 (en) 2002-09-18 2005-08-16 Lam Research Corporation Etching a metal hard mask for an integrated circuit structure
WO2004097923A1 (ja) * 2003-04-30 2004-11-11 Fujitsu Limited 半導体装置の製造方法
JP2006024811A (ja) * 2004-07-09 2006-01-26 Sony Corp 半導体装置の製造方法
JP4612534B2 (ja) * 2005-12-01 2011-01-12 三菱電機株式会社 半導体装置の製造方法
JP5061506B2 (ja) * 2006-06-05 2012-10-31 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5135879B2 (ja) * 2007-05-21 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5135885B2 (ja) * 2007-05-24 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5072531B2 (ja) * 2007-10-24 2012-11-14 東京エレクトロン株式会社 プラズマエッチング方法及び記憶媒体
DE102009028256B4 (de) 2009-08-05 2019-01-24 Robert Bosch Gmbh Verfahren zum Ätzen von Siliziumcarbid mittels eines Plasmaätzverfahrens und Siliziumcarbidsubstrat
JP5604855B2 (ja) * 2009-11-17 2014-10-15 富士通株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP2717298B1 (en) 2020-12-02
CN103794489B (zh) 2019-05-14
EP2717298A3 (en) 2017-08-23
CN103794489A (zh) 2014-05-14
EP2717298A2 (en) 2014-04-09
KR20140043880A (ko) 2014-04-11
JP2014078712A (ja) 2014-05-01
US9040427B2 (en) 2015-05-26
TW201423862A (zh) 2014-06-16
US20140097153A1 (en) 2014-04-10
KR102225475B1 (ko) 2021-03-08
TWI602242B (zh) 2017-10-11
GB201217712D0 (en) 2012-11-14

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