JP6339826B2 - 超臨界流体を利用する基板処理装置、及びこれを含む基板処理システム - Google Patents

超臨界流体を利用する基板処理装置、及びこれを含む基板処理システム Download PDF

Info

Publication number
JP6339826B2
JP6339826B2 JP2014048050A JP2014048050A JP6339826B2 JP 6339826 B2 JP6339826 B2 JP 6339826B2 JP 2014048050 A JP2014048050 A JP 2014048050A JP 2014048050 A JP2014048050 A JP 2014048050A JP 6339826 B2 JP6339826 B2 JP 6339826B2
Authority
JP
Japan
Prior art keywords
supercritical
process region
substrate processing
supercritical process
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014048050A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014175669A5 (enExample
JP2014175669A (ja
Inventor
庸 真 趙
庸 真 趙
ヨン ソン 高
ヨン ソン 高
慶 ソブ 金
慶 ソブ 金
光 秀 金
光 秀 金
石 訓 金
石 訓 金
政 ミン オー
政 ミン オー
根 沢 李
根 沢 李
原 浩 張
原 浩 張
溶 明 田
溶 明 田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2014175669A publication Critical patent/JP2014175669A/ja
Publication of JP2014175669A5 publication Critical patent/JP2014175669A5/ja
Application granted granted Critical
Publication of JP6339826B2 publication Critical patent/JP6339826B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2014048050A 2013-03-12 2014-03-11 超臨界流体を利用する基板処理装置、及びこれを含む基板処理システム Active JP6339826B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020130026254A KR102037844B1 (ko) 2013-03-12 2013-03-12 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법
KR10-2013-0026254 2013-03-12
US13/844,149 2013-03-15
US13/844,149 US9027576B2 (en) 2013-03-12 2013-03-15 Substrate treatment systems using supercritical fluid

Publications (3)

Publication Number Publication Date
JP2014175669A JP2014175669A (ja) 2014-09-22
JP2014175669A5 JP2014175669A5 (enExample) 2017-04-13
JP6339826B2 true JP6339826B2 (ja) 2018-06-06

Family

ID=51522138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014048050A Active JP6339826B2 (ja) 2013-03-12 2014-03-11 超臨界流体を利用する基板処理装置、及びこれを含む基板処理システム

Country Status (5)

Country Link
US (1) US9027576B2 (enExample)
JP (1) JP6339826B2 (enExample)
KR (1) KR102037844B1 (enExample)
CN (1) CN110060942B (enExample)
TW (1) TWI625156B (enExample)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101874901B1 (ko) 2011-12-07 2018-07-06 삼성전자주식회사 기판 건조 장치 및 방법
KR102411946B1 (ko) 2015-07-08 2022-06-22 삼성전자주식회사 초임계 유체를 이용한 기판 처리장치와 이를 포함하는 기판 처리 시스템 및 이를 이용한 기판처리 방법
CN116207033A (zh) * 2015-10-04 2023-06-02 应用材料公司 基板支撑件和挡板设备
JP6804278B2 (ja) * 2016-12-06 2020-12-23 東京エレクトロン株式会社 超臨界流体製造装置および基板処理装置
KR102603528B1 (ko) 2016-12-29 2023-11-17 삼성전자주식회사 기판 처리 장치 및 이를 포함한 기판 처리 시스템
KR102358561B1 (ko) * 2017-06-08 2022-02-04 삼성전자주식회사 기판 처리 장치 및 집적회로 소자 제조 장치
US11569101B2 (en) * 2017-08-10 2023-01-31 Fujikin Incorporated Fluid supply device and fluid supply method
WO2019094604A1 (en) * 2017-11-08 2019-05-16 Delta Design, Inc. System and method for liquid nitrogen recycling
KR102174024B1 (ko) * 2018-10-19 2020-11-05 세메스 주식회사 초임계 처리 장치
KR20200089060A (ko) * 2019-01-16 2020-07-24 무진전자 주식회사 기판 건조 챔버
KR102161037B1 (ko) * 2019-01-31 2020-10-05 무진전자 주식회사 기판 건조 챔버
KR102258986B1 (ko) * 2019-02-13 2021-06-02 무진전자 주식회사 기판 건조 챔버
KR102209589B1 (ko) * 2019-02-25 2021-02-02 무진전자 주식회사 기판 건조 챔버
KR102178594B1 (ko) * 2019-02-26 2020-11-18 무진전자 주식회사 기판 건조 챔버
KR102232495B1 (ko) * 2019-03-19 2021-03-26 무진전자 주식회사 기판 건조 챔버
KR102210830B1 (ko) * 2019-03-25 2021-02-02 무진전자 주식회사 기판 건조 챔버
US10773192B1 (en) * 2019-04-09 2020-09-15 Bitfury Ip B.V. Method and apparatus for recovering dielectric fluids used for immersion cooling
WO2020209536A1 (ko) * 2019-04-09 2020-10-15 무진전자 주식회사 기판 건조 챔버
KR102327873B1 (ko) * 2019-04-16 2021-11-18 무진전자 주식회사 기판 건조 챔버
KR102179716B1 (ko) * 2019-04-24 2020-11-17 무진전자 주식회사 기판 건조 챔버
KR102285672B1 (ko) * 2019-06-04 2021-08-06 무진전자 주식회사 기판 건조 챔버
KR102254186B1 (ko) * 2019-06-04 2021-05-21 무진전자 주식회사 기판 건조 장치
KR102164247B1 (ko) * 2019-06-21 2020-10-12 무진전자 주식회사 기판 건조 챔버
JP7224246B2 (ja) * 2019-06-28 2023-02-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7236338B2 (ja) * 2019-06-28 2023-03-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR102254187B1 (ko) * 2019-07-19 2021-05-21 무진전자 주식회사 기판 건조 장치
JP7493325B2 (ja) * 2019-11-25 2024-05-31 東京エレクトロン株式会社 基板処理装置
US11515178B2 (en) 2020-03-16 2022-11-29 Tokyo Electron Limited System and methods for wafer drying
KR102320033B1 (ko) * 2020-05-27 2021-11-01 무진전자 주식회사 기판 건조 챔버
KR102383007B1 (ko) * 2020-06-01 2022-04-05 무진전자 주식회사 기판 건조 챔버
KR102309272B1 (ko) * 2020-06-02 2021-10-07 무진전자 주식회사 기판 건조 챔버
KR102319449B1 (ko) * 2020-06-25 2021-11-01 무진전자 주식회사 기판 건조 장치
KR102391208B1 (ko) * 2020-07-15 2022-04-27 무진전자 주식회사 기판 건조 챔버
KR102283290B1 (ko) * 2020-07-27 2021-07-29 무진전자 주식회사 기판 건조 챔버
KR102398793B1 (ko) * 2020-07-30 2022-05-18 무진전자 주식회사 기판 건조 챔버
KR102398794B1 (ko) * 2020-08-20 2022-05-18 무진전자 주식회사 기판 건조 챔버
KR102345972B1 (ko) * 2020-09-04 2022-01-03 무진전자 주식회사 기판 건조 챔버
KR102345971B1 (ko) * 2020-09-04 2022-01-03 무진전자 주식회사 기판 건조 챔버
KR102357843B1 (ko) * 2020-10-16 2022-02-07 무진전자 주식회사 기판 건조 장치
KR102357842B1 (ko) * 2020-10-16 2022-02-07 무진전자 주식회사 기판 건조 장치
KR102822561B1 (ko) 2020-11-03 2025-06-18 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
KR102586016B1 (ko) * 2020-11-25 2023-10-11 세메스 주식회사 기판 처리 장치, 지지 유닛 및 지지 유닛의 결합 방법
US11239071B1 (en) * 2020-12-03 2022-02-01 Nanya Technology Corporation Method of processing semiconductor device
KR102622987B1 (ko) 2020-12-10 2024-01-11 세메스 주식회사 기판 처리 장치 및 이에 제공되는 필러 부재
KR102852007B1 (ko) * 2020-12-30 2025-08-29 세메스 주식회사 지지 장치 및 지지 장치를 포함하는 기판 처리 장치
KR102683733B1 (ko) * 2021-10-25 2024-07-12 세메스 주식회사 기판 처리 장치
KR20230090848A (ko) 2021-12-15 2023-06-22 삼성전자주식회사 기판 건조 장치 및 그 방법
US12494382B2 (en) * 2022-06-08 2025-12-09 Semes Co., Ltd. Method and apparatus for treating substrate
KR20240014906A (ko) * 2022-07-26 2024-02-02 삼성전자주식회사 기판 처리 장치 및 기판 처리 방법
KR102761703B1 (ko) * 2022-10-27 2025-02-03 세메스 주식회사 기판 처리 장치
KR102881131B1 (ko) 2023-12-27 2025-11-05 세메스 주식회사 기판 처리 장치
KR102834438B1 (ko) * 2023-12-28 2025-07-16 세메스 주식회사 기판 처리 장치

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6508259B1 (en) 1999-08-05 2003-01-21 S.C. Fluids, Inc. Inverted pressure vessel with horizontal through loading
US6493964B1 (en) 2000-05-25 2002-12-17 Tousimis Research Corp. Supercritical point drying apparatus for semiconductor device manufacturing and bio-medical sample processing
US6562146B1 (en) 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
JP3553904B2 (ja) 2001-04-11 2004-08-11 日本電信電話株式会社 超臨界乾燥方法
US6703316B2 (en) * 2001-04-27 2004-03-09 Kabushiki Kaisha Kobe Seiko Sho Method and system for processing substrate
JP4358486B2 (ja) 2001-07-25 2009-11-04 大日本スクリーン製造株式会社 高圧処理装置および高圧処理方法
JP2003109933A (ja) 2001-10-01 2003-04-11 Hitachi Koki Co Ltd 超臨界乾燥装置
US6742279B2 (en) * 2002-01-16 2004-06-01 Applied Materials Inc. Apparatus and method for rinsing substrates
JP2003224099A (ja) 2002-01-30 2003-08-08 Sony Corp 表面処理方法
US6848458B1 (en) 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
US6843855B2 (en) 2002-03-12 2005-01-18 Applied Materials, Inc. Methods for drying wafer
US6846380B2 (en) 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
JP3920738B2 (ja) 2002-08-22 2007-05-30 株式会社神戸製鋼所 微細構造体の乾燥方法
JP4084235B2 (ja) 2002-08-22 2008-04-30 株式会社神戸製鋼所 保護膜積層微細構造体および該構造体を用いた微細構造体の乾燥方法
JP4133209B2 (ja) * 2002-10-22 2008-08-13 株式会社神戸製鋼所 高圧処理装置
JP2004202351A (ja) 2002-12-25 2004-07-22 Sony Corp 洗浄方法及びその装置
US7191787B1 (en) 2003-02-03 2007-03-20 Lam Research Corporation Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid
JP3965693B2 (ja) 2003-05-07 2007-08-29 株式会社日立ハイテクサイエンスシステムズ 微細構造乾燥処理法とその装置及びその高圧容器
JP2004363404A (ja) 2003-06-05 2004-12-24 Nippon Telegr & Teleph Corp <Ntt> 超臨界乾燥方法
US7323064B2 (en) 2003-08-06 2008-01-29 Micron Technology, Inc. Supercritical fluid technology for cleaning processing chambers and systems
US20060065189A1 (en) * 2004-09-30 2006-03-30 Darko Babic Method and system for homogenization of supercritical fluid in a high pressure processing system
JP2006130418A (ja) 2004-11-05 2006-05-25 Ryusyo Industrial Co Ltd 超臨界流体洗浄・乾燥装置
TWI239558B (en) * 2004-12-30 2005-09-11 Metal Ind Res & Dev Ct Device to clean substrate by super-critical fluid
US7918940B2 (en) 2005-02-07 2011-04-05 Semes Co., Ltd. Apparatus for processing substrate
US7008853B1 (en) 2005-02-25 2006-03-07 Infineon Technologies, Ag Method and system for fabricating free-standing nanostructures
JP2006254814A (ja) 2005-03-17 2006-09-28 Fukuoka Prefecture 脳疾患モデル神経細胞株の製造方法及びその用途
JP4546314B2 (ja) 2005-04-06 2010-09-15 株式会社日立ハイテクノロジーズ 微細構造乾燥処理法及びその装置
TWI298516B (en) 2005-12-27 2008-07-01 Ind Tech Res Inst Supercritical co2 cleaning system and methdo
KR100753493B1 (ko) * 2006-01-21 2007-08-31 서강대학교산학협력단 세정장치
KR100757850B1 (ko) 2006-06-22 2007-09-11 세메스 주식회사 기판 처리 방법
JP2008066495A (ja) 2006-09-07 2008-03-21 Dainippon Screen Mfg Co Ltd 高圧処理装置および高圧処理方法
JP2008084890A (ja) 2006-09-25 2008-04-10 Sony Corp 超臨界流体処理方法及び処理装置
JP2008130685A (ja) 2006-11-17 2008-06-05 Sony Corp 微細構造体の処理方法、処理装置、及びその微細構造体
KR20070008703A (ko) 2006-11-22 2007-01-17 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 집적회로 제품의 제조시 패턴화된 웨이퍼의 건조를 위한조성물 및 방법
JP4534175B2 (ja) * 2007-05-09 2010-09-01 エルピーダメモリ株式会社 基板の製造方法
JP2009004596A (ja) 2007-06-22 2009-01-08 Dainippon Screen Mfg Co Ltd 高圧処理装置
KR100964970B1 (ko) 2007-08-17 2010-06-21 한국전자통신연구원 3 차원 멤즈 미세구조체의 고착방지를 위한 부양 장치
KR100875586B1 (ko) 2007-09-13 2008-12-23 부경대학교 산학협력단 습식 에칭 후 초임계이산화탄소 내에서의 계면활성제를이용한 반도체 기판 건조 방법
JP5359286B2 (ja) 2009-01-07 2013-12-04 東京エレクトロン株式会社 超臨界処理装置、基板処理システム及び超臨界処理方法
KR101096122B1 (ko) 2009-11-25 2011-12-20 세메스 주식회사 기판 건조 장치 및 그의 기판 건조 방법
JP5506461B2 (ja) 2010-03-05 2014-05-28 東京エレクトロン株式会社 超臨界処理装置及び超臨界処理方法
JP2012049446A (ja) 2010-08-30 2012-03-08 Toshiba Corp 超臨界乾燥方法及び超臨界乾燥システム
KR20120028672A (ko) 2010-09-15 2012-03-23 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
JP5450494B2 (ja) * 2011-03-25 2014-03-26 株式会社東芝 半導体基板の超臨界乾燥方法
JP5843277B2 (ja) * 2011-07-19 2016-01-13 株式会社東芝 半導体基板の超臨界乾燥方法及び装置
JP5686261B2 (ja) 2011-07-29 2015-03-18 セメス株式会社ＳＥＭＥＳ ＣＯ．， Ｌｔｄ 基板処理装置及び基板処理方法
KR101874901B1 (ko) 2011-12-07 2018-07-06 삼성전자주식회사 기판 건조 장치 및 방법

Also Published As

Publication number Publication date
CN110060942A (zh) 2019-07-26
CN110060942B (zh) 2023-06-27
US20140262024A1 (en) 2014-09-18
TWI625156B (zh) 2018-06-01
KR102037844B1 (ko) 2019-11-27
KR20140112638A (ko) 2014-09-24
TW201436840A (zh) 2014-10-01
US9027576B2 (en) 2015-05-12
JP2014175669A (ja) 2014-09-22

Similar Documents

Publication Publication Date Title
JP6339826B2 (ja) 超臨界流体を利用する基板処理装置、及びこれを含む基板処理システム
KR101096122B1 (ko) 기판 건조 장치 및 그의 기판 건조 방법
CN105575855B (zh) 基板处理设备
JP6326041B2 (ja) 二酸化炭素の精製された多相のプロセスツールへのデリバリーシステム
US10825698B2 (en) Substrate drying apparatus, facility of manufacturing semiconductor device, and method of drying substrate
EP3255661B1 (en) Substrate treatment method using supercritical fluid
KR20180077949A (ko) 기판 처리 장치 및 이를 포함한 기판 처리 시스템
KR20170006570A (ko) 초임계 유체를 이용한 기판 처리장치와 이를 포함하는 기판 처리 시스템 및 이를 이용한 기판처리 방법
KR101932035B1 (ko) 기판 처리용 유체 공급 시스템 및 방법
KR102253559B1 (ko) 분리 재생 장치 및 기판 처리 장치
JP7246351B2 (ja) 基板処理設備及び基板処理方法
KR102376957B1 (ko) 기판 처리 장치 및 기판 처리 방법
CN108962787B (zh) 基板处理装置和基板处理方法
JP6228800B2 (ja) 基板処理装置
KR102300931B1 (ko) 기판 처리 방법 및 장치
KR102061004B1 (ko) 기판 처리 장치 및 기판 처리 방법
WO2001094038A1 (en) Surface tension effect dryer with porous vessel walls
JP5318975B2 (ja) 高圧処理器を利用した基板処理装置及び高圧処理器のガスリサイクル方法
KR102292034B1 (ko) 기판 처리 장치 및 기판 처리 장치의 처리 방법
KR102776416B1 (ko) 액순환방법 및 기판처리방법
KR20250053296A (ko) 초임계 기판 세정장치 및 그를 이용한 초임계 기판 세정방법
KR20210050628A (ko) 기판 처리 장치
KR20250106566A (ko) 기판 건조 장치 및 기판 건조 방법
KR200460178Y1 (ko) 히팅 장치
JP2025067858A (ja) 基板処理装置及び基板処理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170310

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20171127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180305

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20180508

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20180511

R150 Certificate of patent or registration of utility model

Ref document number: 6339826

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250