KR102037844B1 - 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 - Google Patents
초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 Download PDFInfo
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- KR102037844B1 KR102037844B1 KR1020130026254A KR20130026254A KR102037844B1 KR 102037844 B1 KR102037844 B1 KR 102037844B1 KR 1020130026254 A KR1020130026254 A KR 1020130026254A KR 20130026254 A KR20130026254 A KR 20130026254A KR 102037844 B1 KR102037844 B1 KR 102037844B1
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- supercritical
- process region
- presupercritical
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- supercritical fluid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130026254A KR102037844B1 (ko) | 2013-03-12 | 2013-03-12 | 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 |
| US13/844,149 US9027576B2 (en) | 2013-03-12 | 2013-03-15 | Substrate treatment systems using supercritical fluid |
| TW103104589A TWI625156B (zh) | 2013-03-12 | 2014-02-12 | 使用超臨界流體之基板處理系統 |
| EP17177554.7A EP3255661B1 (en) | 2013-03-12 | 2014-03-07 | Substrate treatment method using supercritical fluid |
| EP14158323.7A EP2779222B1 (en) | 2013-03-12 | 2014-03-07 | Substrate treatment systems using supercritical fluid |
| JP2014048050A JP6339826B2 (ja) | 2013-03-12 | 2014-03-11 | 超臨界流体を利用する基板処理装置、及びこれを含む基板処理システム |
| CN201410090605.4A CN104051299B (zh) | 2013-03-12 | 2014-03-12 | 基板处理装置、基板处理系统以及处理基板的方法 |
| CN201811608953.0A CN110060942B (zh) | 2013-03-12 | 2014-03-12 | 基板处理装置、基板处理系统以及处理基板的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130026254A KR102037844B1 (ko) | 2013-03-12 | 2013-03-12 | 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140112638A KR20140112638A (ko) | 2014-09-24 |
| KR102037844B1 true KR102037844B1 (ko) | 2019-11-27 |
Family
ID=51522138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130026254A Active KR102037844B1 (ko) | 2013-03-12 | 2013-03-12 | 초임계 유체를 이용하는 기판 처리 장치, 이를 포함하는 기판 처리 시스템, 및 기판 처리 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9027576B2 (enExample) |
| JP (1) | JP6339826B2 (enExample) |
| KR (1) | KR102037844B1 (enExample) |
| CN (1) | CN110060942B (enExample) |
| TW (1) | TWI625156B (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12110593B2 (en) | 2020-11-03 | 2024-10-08 | Samsung Electronics Co., Ltd. | Apparatus for fabricating semiconductor device having upper and lower inlets for supplying supercritical fluids and method of fabricating semiconductor device using the same |
| US12119240B2 (en) | 2021-12-15 | 2024-10-15 | Samsung Electronics Co., Ltd. | Substrate drying device and method of drying substrate using the same preliminary class |
| US12234555B2 (en) | 2020-12-10 | 2025-02-25 | Semes Co., Ltd. | Substrate treating apparatus and filler member provided therein |
| US12347720B2 (en) | 2021-10-25 | 2025-07-01 | Semes Co., Ltd. | Apparatus for treating substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101874901B1 (ko) * | 2011-12-07 | 2018-07-06 | 삼성전자주식회사 | 기판 건조 장치 및 방법 |
| KR102411946B1 (ko) | 2015-07-08 | 2022-06-22 | 삼성전자주식회사 | 초임계 유체를 이용한 기판 처리장치와 이를 포함하는 기판 처리 시스템 및 이를 이용한 기판처리 방법 |
| JP6556945B2 (ja) * | 2015-10-04 | 2019-08-07 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板支持とバッフルの装置 |
| JP6804278B2 (ja) * | 2016-12-06 | 2020-12-23 | 東京エレクトロン株式会社 | 超臨界流体製造装置および基板処理装置 |
| KR102603528B1 (ko) | 2016-12-29 | 2023-11-17 | 삼성전자주식회사 | 기판 처리 장치 및 이를 포함한 기판 처리 시스템 |
| KR102358561B1 (ko) | 2017-06-08 | 2022-02-04 | 삼성전자주식회사 | 기판 처리 장치 및 집적회로 소자 제조 장치 |
| CN110998801B (zh) * | 2017-08-10 | 2023-10-31 | 株式会社富士金 | 流体供给装置和流体供给方法 |
| TW201923278A (zh) * | 2017-11-08 | 2019-06-16 | 美商三角設計公司 | 用於液態氮循環之系統及方法 |
| KR102174024B1 (ko) * | 2018-10-19 | 2020-11-05 | 세메스 주식회사 | 초임계 처리 장치 |
| KR20200089060A (ko) * | 2019-01-16 | 2020-07-24 | 무진전자 주식회사 | 기판 건조 챔버 |
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| US12494382B2 (en) * | 2022-06-08 | 2025-12-09 | Semes Co., Ltd. | Method and apparatus for treating substrate |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2014175669A (ja) | 2014-09-22 |
| CN110060942A (zh) | 2019-07-26 |
| US9027576B2 (en) | 2015-05-12 |
| TWI625156B (zh) | 2018-06-01 |
| TW201436840A (zh) | 2014-10-01 |
| CN110060942B (zh) | 2023-06-27 |
| US20140262024A1 (en) | 2014-09-18 |
| JP6339826B2 (ja) | 2018-06-06 |
| KR20140112638A (ko) | 2014-09-24 |
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