TWI239558B - Device to clean substrate by super-critical fluid - Google Patents

Device to clean substrate by super-critical fluid Download PDF

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TWI239558B
TWI239558B TW93141528A TW93141528A TWI239558B TW I239558 B TWI239558 B TW I239558B TW 93141528 A TW93141528 A TW 93141528A TW 93141528 A TW93141528 A TW 93141528A TW I239558 B TWI239558 B TW I239558B
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Taiwan
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substrate
item
scope
fluid
heating
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TW93141528A
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Chinese (zh)
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TW200623244A (en
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Tz-Jen Guo
Jun-Hung Hung
Tzung-Shin Yang
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Metal Ind Res & Dev Ct
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Abstract

This invention discloses a device to clean substrate by super-critical fluid. It uses the unique properties of super-critical fluid to provide a more effective and environmental-protection device to clean the contamination and particles on the surface of wafer, semiconductor or glass substrate. A rotating stationary plate is set up to fix the substrate in a high-pressure container. There is also a spraying nozzle mechanism set up to spray a jet of fluid to wash the surface of substrate. It can improve the cleaning effect for the contamination and particles on the surface of substrate. Furthermore, a heating device is installed to quickly compensate the heat of substrate, which can compensate the heat of substrate after cleaning and releasing the pressure. The structure of the compensate heating device is simple. The cost of manufacture and operation is lower compared to the prior art.

Description

1239558 九、發明說明: 【發明所屬之技術領域】 /本發明關⑤一種以超臨界流體清洗基板之袭置,其主 要係利用超臨界流體的獨特性質提供—種更有效且更環保 ^清洗晶圓、半導體或玻璃基板等之表面污染物及微粒之 裝置,且亦提供-種結構簡單,製作及操作成本較習知技 術低的清洗基板之裝置。 【先前技術】 一般而言,超臨界流體的物理性質係介於氣、液相之 間。例如,黏度接近於氣體,密度接近於液體,因密度 高’可輸送較氣體更多的流體;因黏度低,輸送時所ς的 功率則較液體為低。又如,擴散健高於液㈣至⑽ 倍,亦即質量傳遞阻力遠較液體為小,因之在質量傳遞上 較液體為快。此外’超臨界流體更有如氣體幾無表面張 力’因此很容易滲入到多孔性組織中。 由於大部分的超臨界流體在常壓下均屬氣態,因之在 使用後只要減壓即會變回氣相,而和其他固、液相的物質 分離’故容易回收再使用,亦是使用超臨界流體的優點之 由於超臨界流體具有低表面張力、低黏度、高密产、 以及高擴散性的獨特性質,尤其可操控之溶劑般特性^吏 其成為有機及水性溶狀最佳環料代品。許多氣體包括 二氧化碳或氨(Ammonia)或氦(Helium)或氬(arg〇n)或氙 (χ_)或氧化亞t⑽麵Gxide) 4其組合均可做為超臨界 1239558 、:體’由於二氧化碳具有無毒、無色、無臭、不燃性、無 /性、不需廢水處理、對人體無害、對環境友善及易於 :到臨界點(P_ar,Tc=31.rc)等優點,因而最常被使 用0 I、近年來’半導體I業面對愈來愈多關於有毒化學品排 方法規限制,以及純水與溶劑成本的不斷增加,必復切真 檢討如何減少主要製程中化學品與水的使料1除^製 造成本與環保問題外,許多元件設計都朝更精細、更繁二 及高密度方向發展,在進入励奈米以下的製程時,更ς 面臣™因奈米尺度或材料特徵所導致之技術槪頸,伴隨而來 的即是如何提出有效且符合環保要求的晶圓表面清淨方 法0 *過去所用的清淨方法,包括使用酸驗性溶液,雖然相 j效’但也街生出—些問題,例如須使用大量純水和化 :忒釗,适會造成產品及環境的污染,以及在處理後須費 7的加以乾燥。而在新一代製程中,在發展至幻、幻夺米 2時,由於線寬縮小,深寬比加大,晶圓具有渠溝:; 珠見比結構時,由於液體表面張力大,不易進人結構内: 加=清洗且更不易乾燥,目前之濕式洗淨製程已經無法滿 足次世代產品之洗淨要求。超臨界流體有如氣體幾無表面 張力,且使用後只要減壓即會變回氣相,而和其他固、液 :的物質分離,容易回收再使用,因此以二氧化碳超臨界 體為β /爭劑的製程確可克服前述使用水溶液的問題。 美國專利US 6,619,304係於一壓力容器中以一被加厣 1239558 • < . 之流體(包括超臨界二氧化碳)清洗晶圓表面,其設有一 方疋轉固定盤,固定欲清洗之基板,該專利並於旋轉固定盤 上下方各设置一流體循環加熱裝置,於壓力容器洩壓時 補償被清洗物之溫度,第丨圖之丨為該流體循環加熱裝置 設於旋轉固定盤之上的上加熱裝置462的上視圖,用於;加 熱的〃IL體在外部以加熱裝置加熱之後,經由入口 46仍流入 環狀通道466B,再經由一短通道466C流入旋渦狀主通道 466A,再由出口 466E流出上加熱裝置462,並送至外部冷 卻裝置進行散熱;第丨圖之2為該流體循環加熱裝置設於 方疋轉固定盤之下的下加熱裝置472的上視圖,员 5雙—色外部以力口熱裝置加熱之後,經由入口 476Β流入旋渦 狀主通這476Α,再由出口 476C流出上加熱裝置472 ;使用 的流體可以是水、乙二醇、丙二醇,或其混合液等;該專 利之該流體循環加熱裝置除上述構造之外,尚需各種隔 熱、防漏、加熱、散熱、泵送及感測的設計;因此該專利 之該流體循環加熱裝置在設計上較為複雜,設備之製作成 本及操作成本較高;此外該專利在清洗機制上,依賴超臨 界*體之特性及輔溶劑(c〇_s〇lvent)及轉盤旋轉造成流體流 動之作用’對於表面具有溝槽且深寬比大之基板洗淨效果 較差。 【發明内容】 本發明之目的係在提供一種以超臨界流體清洗基板之 裝置’其係利用超臨界流體具有低表面張力、低黏度、高 饴度、同擴散性以及容易和其他固、液相的物質分離的獨 1239558 特性質,以清洗晶圓、半 璃、石英、陶瓷、人严 先電元件或平板狀之玻 及微粒之褒置。 刀子飾專材料之表面污染物 本發明之另一目的传大坦yu 招之梦f種以超臨界流體清洗基 板之衣置’其係利用超臨界流體具 度、高密度以及高擴散性的 拫刀低站 體或玻璃基板等具有渠溝或 :、日日圓牛蜍 ^ , ^ 一同衣見比、、、口構日守,由於液體表 面張力大,不易進入結構内邱主 円4加以〉月洗且更不易乾燥的問 題0 本發明之又一目的传太担糾 α ^ 在^供一種以超臨界流體清洗基 板之衣置,其係利用在常壓兔 土下為乳悲的超臨界流體,在使 用後只要減壓即會變回氣相而和其他固、㈣㈣質分離 的容易⑽再使用的獨特性f,以解決傳統清洗基板方法 須使用大量純水和化學試劑而造成環境污染的問題。 本毛月之#目的係、在提供—種以超臨界流體清洗基 板之裝置’其設有-喷嘴機構以喷流噴洗基板表面,加上 旋轉造成的離心、力作用’可有效改善對於基板表面污染物 及微粒之清洗效果。 本發明之更一目的係在提供一種以超臨界流體清洗基 板之裝置’其設有-結構簡單且製作及操作成本較習知技 術低並可快速補该基板熱能的加熱裝置,於洗淨完成茂壓 時補償基板熱量。 為達到上述之目的,本發明提出之以超臨界流體清洗 基板之裝置包含: 1239558 -壓力容器,其係為可密閉者,包含—本體及上芸, 用於形成-密閉空間’以儲存超臨界流體,並形成壓力, 以維持流體保持在超臨界狀態; -設於μ力容器内之旋轉盤,包含—基板容置盤,一 軸桿,絲板容置盤料容置_待清洗基板,該轴桿可連 結至-驅動裝置,使該基板容置盤旋轉,造成該壓力容哭 内之超臨界流體產生流動,並因旋轉所產生之離心力二 增強洗淨之效果;另於喷嘴以噴μ洗時,可產±脈衝& 果及多方向性喷洗而增加洗淨效杲; 一驅動裝置,用於驅動該旋轉盤; 至少-喷嘴裝置,用於喷出超臨界流體,藉由高壓之 超臨界流體喷流直接喷洗基板表面,增加清洗效果,同時 亦是超臨界流體進入該壓力容器之入口· -超臨界流體供給裝置’用於供給超臨界流體至該壓 力容器内; 一加熱裝置,因該壓力容器洩壓時流體帶走該壓力容 器内的熱量’使該壓力容器内之溫度快速下降,為避免基 板因溫度太低而受損,故必須於該壓力容器洩壓時及時補 償該基板所散失的熱能,避免該基板因溫度太低而受損; 一流體排出裝置,用於將該壓力容器内之流體排出至 壓力容器外; 一溫度控制裝置,用於控制該加熱裴置的溫度補償作 用之進行; 其中該加熱裝置之設計有兩種方式,一種係於該壓力 1239558 , 容器内設置一可耐高壓並可快速產生表面高溫之加熱器, 藉輻射熱以補償該基板之溫度;另一種方式係將加熱器設 於該壓力容器外部,當該壓力容器洩壓至某一壓力時,及 時補充適量經加熱至某一溫度的氣體,藉熱對流以補償該 基板之溫度。 以下藉由具體實施例配合所附的圖式詳加說明,當更 容易瞭解本發明之目的、技術内容、特點及其所達成之功 效。 【實施方式】 如第2圖及第3圖所示,本發明之以超臨界流體清洗 基板之裝置包含:一壓力容器10、一旋轉盤20、一驅動裝 置30、至少一喷嘴裝置40、一超臨界流體供給裝置50、一 加熱裝置60或61、一流體排出裝置70及一溫度控制裝置 80 ° 該壓力容器10,其係為可密閉者,更包含一本體11及 一上蓋12,並以一快速啟閉夾鉗13夾合該本體11及該上蓋 12而形成一密閉空間,以儲存超臨界流體,並形成壓力, 以維持流體保持在超臨界狀態;該超臨界流體供給裝置50 提供一高壓且超臨界態的流體,該超臨界流體自設於該壓 力容器10的一流體入口 14經由該喷嘴裝置40進入壓力容器 10,但亦可不經喷嘴直接由流體入口 14進入壓力容器10 ; 該旋轉盤20設於該壓力容器10之内,該旋轉盤20更包含一 基板容置盤21及一軸桿22,該基板容置盤21用於容置一待 清洗基板,該軸桿22係貫穿壓力容器本體,可連結至該驅 1239558 動裝置30,該驅動裝置30係為一機械式驅動旋轉般2〇 .另 該旋轉盤20亦可包含一基板容置盤21及一未貫穿壓力容哭 本體之轴桿22,而該驅動裝置30係為—非機械方式驅動; 旋轉盤,例如以磁力驅動該旋轉盤;該驅動裝置3〇驅動該 基板容置盤21旋轉,造成該壓力容器1〇内之超臨界流體產 生流動,並因旋轉所產生之離心力,而增強洗淨之效果; 而當該喷嘴裝置40以喷流進行噴洗時,更可產生脈衝效果 j多方向性喷洗而增加洗淨效果,且其流體内亦可加人適 量的辅溶劑(C〇-s〇lvent)以增強洗淨效果;當基板清洗完 成,該壓力容器10内之流體經由一流體出口 15送至流:排 出裝置70洩壓’將流體排出該壓力容器1〇 ;因該壓力容器 10壓時流體帶走該壓力容器1Q内的熱量,使該壓力容哭 10内之溫度快速下降,為避免基板因溫度太低而受損,二 必須於該壓力容器10茂壓時以該加熱裝置6〇及61及時補償 熱量。 本發明之以超臨界流體清洗基板之裝置中的加熱裝置 包含兩種設計,一種係於壓力容器内設置一可耐高壓並可 ^5 ^^^ 16〇^^i =,且該加熱器601可為一電熱式加熱器,藉輻射熱以補 償基板之溫度,·另一種設計如第3圖所示,係將該加熱装 ^ 61汉於该壓力容器1G外部,該加熱裝置61之内設有加熱 611且。亥加熱态611可為一電熱式加熱器,可將該加 熱裝置:1之内的氣體加熱至某-溫度,當壓力容器10洩壓 至某壓力蚪,經由連接該加熱裝置61和壓力容器1〇的一 1239558 ,, 加熱氣體管路16及一設於該壓力容器10的一加熱氣體入口 17,及時補充適量經加熱的氣體,以補償基板之溫度;為 避免基板因過度加熱而損壞,以該溫度感知器81偵測基板 或壓力容器内流體的溫度,並藉由溫度控制裝置回饋以控 制加熱的進行,且該溫度感知器81可為熱電偶式、熱敏電 阻式、紅外線式溫度感知器或其組合。 雖然本發明以較佳實施例揭露於上,然其並非用以 限定本發明,任何熟習此項技藝者,在不脫離本發明之 精神和範圍内,當可做些許之更動與潤飾,因此本發明 之保護範圍當視後附之申請範圍所界定者為準。 【圖式簡單說明】 第1圖之1 、之2為習知清洗基板裝置之上、下加熱裝置 的上視圖。 第2圖為本發明一體實施之示意圖。 第3圖為本發明另一體實施之示意圖。 【主要元件符號說明】 先前技術 462上加熱裝置 466A旋渴狀主通道 466B環狀通道 466C短通道 466D 入口 466E 出口 472 下加熱裝置 1239558 476A旋渦狀主通道 476B 入口 476C 出口 本發明 10 壓力容器 11 本體 12 上蓋 13 快速啟閉夾鉗 14 流體入口 15 流體出口 16加熱氣體管路 17加熱氣體入口 20 旋轉盤 21 基板容置盤 22 轴桿 30 驅動裝置 40 喷嘴裝置 50 超臨界流體供給裝置 60 加熱裝置 601加熱器 61 加熱裝置 611加熱器 70 流體排出裝置 80溫度控制裝置 1239558 81溫度感知器1239558 IX. Description of the invention: [Technical field to which the invention belongs] / This invention relates to a method for cleaning substrates with supercritical fluid, which is mainly provided by the unique properties of supercritical fluid-a more effective and environmentally friendly ^ cleaning crystal Devices for surface contamination and particles such as circles, semiconductors, or glass substrates, and also provide a device for cleaning substrates with a simple structure and lower manufacturing and operating costs than conventional techniques. [Prior art] In general, the physical properties of a supercritical fluid are between gas and liquid phases. For example, the viscosity is close to that of gas and the density is close to that of liquid. Because of its high density, it can transport more fluids than gas; because of its low viscosity, the power delivered is lower than that of liquid. For another example, the diffusion strength is higher than the liquid ㈣ to ⑽ times, that is, the mass transfer resistance is much smaller than that of the liquid, so the mass transfer is faster than the liquid. In addition, the 'supercritical fluid' is almost as gas-free and has no surface tension, and therefore easily penetrates into a porous structure. Since most supercritical fluids are gaseous under normal pressure, they will return to the gas phase as long as the pressure is reduced after use, and they are separated from other solid and liquid substances, so they are easy to recycle and reuse. The advantages of supercritical fluids are due to the unique properties of supercritical fluids with low surface tension, low viscosity, high density, and high diffusivity, especially the controllable solvent characteristics. ^ It becomes the best material for organic and aqueous solvents. Product. Many gases include carbon dioxide or ammonia (Ammonia) or helium (argium) or argon (argon) or xenon (χ_) or sub-titanium oxide (Gxide) 4 The combination of these gases can be used as supercritical 1239558 ,: Non-toxic, colorless, odorless, non-combustible, non-sexual, no need for wastewater treatment, harmless to human body, friendly to the environment and easy: to the critical point (P_ar, Tc = 31.rc), etc., so it is most commonly used 0 I In recent years, the semiconductor industry has faced more and more restrictions on toxic chemical discharge methods and the increasing cost of pure water and solvents. It must review how to reduce the use of chemicals and water in major processes. In addition to manufacturing cost and environmental protection issues, many component designs are moving toward finer, more complex, and high-density directions. When entering processes below Reliance Nanometer, it ’s even more difficult due to nanometer scale or material characteristics. The technical problem of necking is accompanied by how to propose effective and environmentally friendly wafer surface cleaning methods. 0 * The cleaning methods used in the past, including the use of acid-test solutions, although the phase is effective, but also produced some— problem, For example, it is necessary to use a large amount of pure water and chemicals: it will cause pollution to the product and the environment, and it will cost 7 to dry after treatment. In the new generation process, when developing to the magic and magic rice 2, because the line width is reduced, the depth-to-width ratio is increased, and the wafer has trenches :; in the case of the specific structure, due to the large surface tension of the liquid, it is not easy to enter In the human structure: plus = cleaning and more difficult to dry, the current wet cleaning process can no longer meet the cleaning requirements of next-generation products. Supercritical fluids have almost no surface tension like gas, and they will change back to the gas phase as long as they are decompressed after use. They are separated from other solid and liquid substances and are easy to recycle and reuse. The process can overcome the aforementioned problems of using aqueous solutions. U.S. patent US 6,619,304 is used to clean the surface of a wafer with a fluid (including supercritical carbon dioxide) added to a pressure vessel in a pressure vessel, which is provided with a cymbal fixed plate to fix the substrate to be cleaned. The patent A fluid circulation heating device is provided on the upper and lower sides of the rotary fixed plate to compensate the temperature of the object to be cleaned when the pressure vessel is depressurized. Figure 丨 shows the upper heating device 462 of the fluid circulating heating device provided on the rotary fixed plate. Top view for: After the heated 〃IL body is heated externally by a heating device, it still flows into the annular channel 466B through the inlet 46, then flows into the vortex main channel 466A through a short channel 466C, and flows out from the outlet 466E for heating Device 462, which is sent to an external cooling device for heat dissipation; Figure 丨 2 is a top view of the lower heating device 472 of the fluid circulation heating device set under the square turn fixed plate, 5 double-color external force port After the heating device is heated, it flows into the vortex main channel 476A through the inlet 476B, and then flows out of the heating device 472 from the outlet 476C; the fluid used can be water and glycol Propylene glycol, or its mixed liquid, etc. In addition to the above-mentioned structure, the fluid circulation heating device of the patent also needs various designs of heat insulation, leakage prevention, heating, heat dissipation, pumping and sensing; therefore, the fluid circulation of the patent The design of the heating device is more complicated, and the manufacturing cost and operating cost of the device are relatively high. In addition, the patent relies on the characteristics of the supercritical body and the auxiliary solvent (c0_solvent) and the fluid rotation caused by the rotation of the cleaning mechanism. The effect is not good for substrates with grooves on the surface and a large aspect ratio. [Summary of the Invention] The object of the present invention is to provide a device for cleaning a substrate with a supercritical fluid, which uses a supercritical fluid to have a low surface tension, a low viscosity, a high degree of homogeneity, a co-diffusion property, and be easily compatible with other solid and liquid phases. The unique 1239558 characteristics of the material separation are used to clean wafers, semi-glazed glass, quartz, ceramics, electrical components or flat glass and particles. Surface contamination of knife decoration materials Another object of the present invention is to convey the great fate of the present invention, a type of clothes for cleaning substrates with supercritical fluids, which uses supercritical fluids with high density, high density, and high diffusivity. The knife low station body or the glass substrate has a trench or :, Japanese Yen Bull Toad ^, ^ See the comparison with the Japanese, Japanese, Japanese, and Japanese, due to the large surface tension of the liquid, it is not easy to enter the structure. The problem of washing and making it harder to dry 0 Another object of the present invention is to provide a solution for cleaning the substrate with a supercritical fluid, which uses a supercritical fluid that is milky sad under normal pressure rabbit soil. After use, the pressure will change back to the gas phase and be separated from other solid and solid materials. It is easy to reuse. F is used to solve the traditional method of cleaning substrates, which requires a lot of pure water and chemical reagents to cause environmental pollution. problem. The purpose of this month is to provide a device for cleaning the substrate with a supercritical fluid. The device is provided with a nozzle mechanism to spray and clean the surface of the substrate, and the centrifugal and force effects caused by rotation can effectively improve the substrate. Cleaning effect of surface pollutants and particles. A further object of the present invention is to provide a device for cleaning a substrate with a supercritical fluid, which is provided with a heating device that has a simple structure, lower manufacturing and operating costs than conventional technologies, and can quickly replenish the substrate ’s thermal energy. Compensate substrate heat during greening. In order to achieve the above-mentioned object, the device for cleaning substrates with supercritical fluid proposed by the present invention includes: 1239558-a pressure vessel, which is a sealable body, including-the body and the upper part, for forming-a closed space 'to store supercritical Fluid and forming a pressure to maintain the fluid in a supercritical state;-a rotating disk provided in the μ-force container, including-a substrate receiving disk, a shaft, and a wire receiving disk material_the substrate to be cleaned, the The shaft can be connected to a driving device to rotate the substrate receiving disk, causing the supercritical fluid in the pressure chamber to flow, and the centrifugal force generated by the rotation to enhance the cleaning effect; and the nozzle is sprayed with μ During washing, ± pulse & multi-directional spray washing can be produced to increase cleaning efficiency; a driving device for driving the rotating disk; at least-a nozzle device for ejecting supercritical fluid by high pressure The supercritical fluid jet directly sprays and cleans the surface of the substrate to increase the cleaning effect. At the same time, it is also the entrance of the supercritical fluid into the pressure vessel.-The supercritical fluid supply device is used to supply supercritical fluid to the In the pressure vessel; a heating device, because the fluid takes away the heat in the pressure vessel when the pressure vessel is depressurized, the temperature in the pressure vessel drops rapidly, in order to avoid the substrate being damaged due to the low temperature, it must be When the pressure vessel is depressurized, the thermal energy lost by the substrate is compensated in time to prevent the substrate from being damaged because the temperature is too low; a fluid discharge device is used to discharge the fluid in the pressure vessel to the outside of the pressure vessel; a temperature control device, It is used to control the temperature compensation effect of the heating device. The heating device is designed in two ways. One is at the pressure of 1239558. A heater that can withstand high pressure and quickly generate high surface temperature is provided in the container. Radiation heat to compensate the temperature of the substrate; another way is to set the heater outside the pressure vessel, and when the pressure vessel is relieved to a certain pressure, replenish an appropriate amount of gas heated to a certain temperature in time, and use heat convection to Compensate the temperature of the substrate. In the following, detailed description will be given through specific embodiments in conjunction with the accompanying drawings to make it easier to understand the purpose, technical content, features and functions of the present invention. [Embodiment] As shown in FIG. 2 and FIG. 3, the device for cleaning a substrate with a supercritical fluid according to the present invention includes: a pressure vessel 10, a rotating disk 20, a driving device 30, at least a nozzle device 40, a The supercritical fluid supply device 50, a heating device 60 or 61, a fluid discharge device 70, and a temperature control device 80 °. The pressure vessel 10, which is a sealable device, further includes a body 11 and an upper cover 12, and A quick opening and closing clamp 13 clamps the body 11 and the upper cover 12 to form a closed space to store supercritical fluid and form pressure to maintain the fluid in a supercritical state. The supercritical fluid supply device 50 provides a High-pressure and supercritical fluid, the supercritical fluid is provided from a fluid inlet 14 of the pressure vessel 10 into the pressure vessel 10 through the nozzle device 40, but can also enter the pressure vessel 10 directly from the fluid inlet 14 without a nozzle; the A rotating disk 20 is disposed in the pressure vessel 10. The rotating disk 20 further includes a substrate receiving disk 21 and a shaft 22. The substrate receiving disk 21 is used to receive a substrate to be cleaned. Through the pressure vessel body, it can be connected to the drive 1239558 driving device 30, which is a mechanical driving rotation 20. In addition, the rotating disk 20 may also include a substrate receiving disk 21 and a non-penetrating pressure container. The shaft 22 of the crying body is driven by a non-mechanical method; a rotating disk, for example, the rotating disk is driven by magnetic force; the driving device 30 drives the substrate receiving disk 21 to rotate, causing the pressure vessel 1 The supercritical fluid within 〇 flows, and the centrifugal force generated by the rotation enhances the cleaning effect; and when the nozzle device 40 is spray-washed with a jet stream, a pulse effect can be generated. The cleaning effect is increased, and an appropriate amount of a co-solvent (C0-solvent) can be added to the fluid to enhance the cleaning effect; when the substrate cleaning is completed, the fluid in the pressure vessel 10 is sent to the fluid outlet 15 through Flow: The discharge device 70 releases the pressure, and the fluid is discharged from the pressure vessel 10; because the fluid takes away the heat in the pressure vessel 1Q when the pressure vessel 10 is pressed, the temperature in the pressure vessel 10 is rapidly decreased, in order to avoid the substrate Due to temperature The heating means 61 and timely 6〇 low to compensate for the heat damaged, two of the pressure vessel 10 to be press-metallocene. The heating device in the device for cleaning substrates with supercritical fluid according to the present invention includes two designs, one is provided in a pressure vessel and can withstand high pressure and ^ 5 ^^^ 16〇 ^^ i, and the heater 601 It can be an electric heater, which can compensate the temperature of the substrate by radiant heat. Another design is shown in Figure 3. The heating device is installed outside the pressure vessel 1G, and the heating device 61 is provided inside. Heat 611 and. The heating state 611 can be an electric heating type heater, which can heat the gas in the heating device: 1 to a certain temperature. When the pressure vessel 10 is released to a certain pressure, the heating device 61 and the pressure vessel 1 are connected. 〇 1239558, heating gas pipeline 16 and a heating gas inlet 17 provided in the pressure vessel 10, in order to supplement the appropriate amount of heated gas in order to compensate the temperature of the substrate; in order to avoid the substrate damage due to excessive heating, The temperature sensor 81 detects the temperature of the fluid in the substrate or the pressure vessel, and controls the heating by feedback from the temperature control device. The temperature sensor 81 can be a thermocouple type, a thermistor type, or an infrared type temperature sensor. Or a combination thereof. Although the present invention is disclosed above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached application. [Brief description of the drawings] Figures 1 and 2 of Figure 1 are top views of the conventional heating device for cleaning substrates above and below. Figure 2 is a schematic diagram of the integrated implementation of the present invention. Figure 3 is a schematic diagram of another embodiment of the present invention. [Description of main component symbols] In the prior art 462, the heating device 466A has a thirsty main channel 466B, a ring channel 466C, a short channel 466D, an inlet 466E, and an outlet 472. The lower heating device 1239558 476A has a vortex-shaped main channel 476B. 12 Upper cover 13 Quick opening and closing clamps 14 Fluid inlet 15 Fluid outlet 16 Heating gas pipeline 17 Heating gas inlet 20 Rotating disk 21 Substrate receiving disk 22 Shaft 30 Driving device 40 Nozzle device 50 Supercritical fluid supply device 60 Heating device 601 Heater 61 heating device 611 heater 70 fluid discharge device 80 temperature control device 1239558 81 temperature sensor

Claims (1)

1239558 十、申請專利範圍: 1·種乂超體清洗基板之裝置,其係利用超臨界流 體α洗基板’其包含: -壓力容器,其係為可密閉者’其更包含一本體及上 、用於形成雄、閉空Μ ’以儲存該超臨界流體,並 形成壓力,以維持&體保持在超臨界狀態; -旋轉盤’設於該墨力容器内’該旋轉盤;旋轉,其更 U基板备置盤及一轴桿,該基板容置盤用於容置 一待清洗基板; 一驅動裝置,連結至該旋轉盤之該軸桿,用於驅動該旋 超6¾界流體供給裝 於仏給該超臨界流 力容器内 一加熱裝置,用於加熱該基板; -出裝置,用於將該壓力容器内之流體排至壓力 -溫度控制裝置’用於控制該加熱裝置的溫度補 之進行。 2. 體洗基板之裝置’其一界流 了容器’其係為可密閉者’其更包含一本體及上 二用於形成一密閉空間’以儲存該超臨界流體,並 一夕成壓力,以維持流體保持在超臨界狀態; '旋轉盤,設於該壓力容器内,該旋轉盤;旋轉,其更 15 1239558 ^ * 包含一基板容置盤及一軸桿,該基板容置盤用於容置 一待清洗基板; 一驅動裝置,連結至該旋轉盤之該軸桿,用於驅動該旋 轉盤; 至少一噴嘴裝置,用於喷出該超臨界流體,藉由高壓之 該超臨界流體,以喷流直接喷洗基板表面。 一超臨界流體供給裝置,用於供給該超臨界流體至該壓 力容器内; -加熱裝置’用於加熱該基板; ® 一流體排出裝置,用於將該壓力容器内之流體排至壓力 容器外; 一溫度控制裝置,用於控制該加熱裝置的溫度補償作用。 之進行。 3·如申請專利範圍第1或2項所述之裝置,其中該超臨界 流體係由二氧化碳(Carbon dioxide)或氨(Ammonia)或氦 (Hdlum)或氬(ar§on)或氙(Xenon)或氧化亞氮(Citrous _ oxide)或其組合所形成。 4·如申凊專利範圍第丨或2項所述之裝置,其中該基板可 為晶圓、半導體、光電元件或平板狀之玻璃、石英、陶 究、金屬、高分子塑膠等材料。 5·如申請專利範圍第1或2項所述之裴置,其中該超臨界 流體内亦可加入適量的輔溶劑(c〇_s〇lvent)以增強洗淨效 果。 6·如申睛專利範圍第1或2項所述之裝置,其中該壓力容 16 1239558 而:更° 3快速啟閉夹钳’用於夾合該本體及該上μ 而形成一密閉空間。 風 7·:Γ!專!1範圍第1或2項所述之裝置,其中該旋轉盤 才干係貝牙壓力容器本體’且該驅動裝置係以 式驅動該旋轉盤。 乃 .如申凊專利範圍第丨或2項所述之裝置,其中該旋轉盤 轴才干係未貝牙壓力容器本體,且該驅動裝置係以非機 械方式驅動該旋轉盤。 9.如申請專利範圍第8項所述之裝置,其中該驅動裝置係 以磁力驅動該旋轉盤。 、申明專利圍第8項所述之裝置,其中該驅動裝置係 以流體動力驅動該旋轉盤。 L如申明專利圍第i或2項所述之裝置,其中該加熱裝 置係設於該壓力容器内。 12·如申明專利乾圍第u項所述之裝置,其中該加熱裝置係 設於該旋轉盤上方。 13·如申明專利範圍第丨丨項所述之裝置,其中該加熱裝置更 包含一電熱式加熱器。 I4·如申請專利範圍第i或2項所述之裝置,其中該加熱裝 置係設於該壓力容器外。 15.如申請專利範圍第14項所述之裝置,其中該加熱裝置係 以加熱至某一溫度的氣體,經由一管路輸送至該壓力容 器之内,以加熱基板。 16·如申请專利範圍第丨4項所述之裝置,其中該加熱裝置更 17 1239558 . ' 設有一容器,用以容置該氣體,且該容器之内更設有一 電熱式加熱器。 17. 如申請專利範圍第14項所述之裝置,其中該加熱裝置更 包含一溫度感知器,用於偵測該氣體的溫度,以控制加 熱的進行。 18. 如申請專利範圍第1或2項所述之裝置,其中該溫度控 制裝置,包含有溫度感知裝置及回饋控制裝置。 19. 如申請專利範圍第18項所述之裝置,其中該溫度感知裝 置,係為熱敏電阻式溫度感知器或紅外線式溫度感知器 或熱電偶式溫度感知器或為其組合。 181239558 10. Scope of patent application: 1. A substrate cleaning device using supercritical fluid, which uses a supercritical fluid α to clean the substrate. 'It contains:-a pressure vessel, which is hermetically sealed.' It further includes a body and upper, Used to form male and closed M ′ to store the supercritical fluid and form pressure to maintain the & body in a supercritical state;-a rotating disk 'set in the ink container' the rotating disk; rotation, its more The U substrate is provided with a tray and a shaft. The substrate receiving tray is used for containing a substrate to be cleaned. A driving device is connected to the shaft of the rotary disk, and is used to drive the rotary super fluid supply.仏 Give a heating device in the supercritical fluid container for heating the substrate;-a device for discharging the fluid in the pressure container to a pressure-temperature control device 'for controlling the temperature of the heating device get on. 2. The device for body-washing the substrate 'its boundary has a container' which is a sealable one 'which further comprises a body and an upper two for forming a closed space' to store the supercritical fluid and become pressure overnight, To maintain the fluid in a supercritical state; 'Rotating disk, set in the pressure vessel, the rotating disk; rotating, and more 15 1239558 ^ * Contains a substrate receiving disk and a shaft, the substrate receiving disk is used to accommodate Placing a substrate to be cleaned; a driving device connected to the shaft of the rotating disk for driving the rotating disk; at least one nozzle device for ejecting the supercritical fluid, and the supercritical fluid under high pressure, The substrate surface is directly spray-washed with a jet. A supercritical fluid supply device for supplying the supercritical fluid into the pressure vessel; a heating device 'for heating the substrate; a fluid discharge device for discharging the fluid in the pressure container to the outside of the pressure container A temperature control device for controlling the temperature compensation effect of the heating device; Proceed. 3. The device according to item 1 or 2 of the scope of patent application, wherein the supercritical flow system is composed of carbon dioxide (carbon dioxide) or ammonia (Ammonia) or helium (Hdlum) or argon (ar§on) or xenon (Xenon) Or formed by nitrous oxide (Citrous _ oxide) or a combination thereof. 4. The device according to item 1 or 2 of the patent application scope, wherein the substrate can be a wafer, a semiconductor, a photovoltaic element or a flat glass, quartz, ceramic, metal, polymer plastic and other materials. 5. As described in item 1 or 2 of the patent application scope, an appropriate amount of a co-solvent (c0_solvent) may be added to the supercritical fluid to enhance the cleaning effect. 6. The device according to item 1 or 2 of the patent scope of Shenyan, wherein the pressure capacity 16 1239558 and: more ° 3 quick opening and closing clamps' are used to clamp the body and the upper μ to form a closed space. Wind 7 ·: Γ! Special! The device described in item 1 or 2 of the scope, wherein the rotary disk is a shell pressure vessel body 'and the driving device drives the rotary disk in a conventional manner. The device according to item 1 or 2 of the patent application scope, wherein the rotating disk shaft is the body of the pressure vessel and the driving device drives the rotating disk in a non-mechanical manner. 9. The device according to item 8 of the scope of patent application, wherein the driving device drives the rotating disk magnetically. 2. The device described in claim 8 of the patent, wherein the driving device drives the rotating disk with fluid power. L The device according to item i or 2 of the stated patent, wherein the heating device is provided in the pressure vessel. 12. The device according to item u of the patent claim, wherein the heating device is provided above the rotary disk. 13. The device according to item 丨 丨 of the stated patent scope, wherein the heating device further comprises an electric heating heater. I4. The device according to item i or 2 of the scope of patent application, wherein the heating device is provided outside the pressure vessel. 15. The device according to item 14 of the scope of the patent application, wherein the heating device is a gas heated to a certain temperature and is conveyed into the pressure container through a pipeline to heat the substrate. 16. The device as described in item 4 of the patent application scope, wherein the heating device is further provided with a container for containing the gas, and an electric heating heater is further provided in the container. 17. The device according to item 14 of the scope of patent application, wherein the heating device further comprises a temperature sensor for detecting the temperature of the gas to control the heating. 18. The device according to item 1 or 2 of the scope of patent application, wherein the temperature control device includes a temperature sensing device and a feedback control device. 19. The device according to item 18 of the scope of patent application, wherein the temperature sensing device is a thermistor temperature sensor or an infrared temperature sensor or a thermocouple temperature sensor or a combination thereof. 18
TW93141528A 2004-12-30 2004-12-30 Device to clean substrate by super-critical fluid TWI239558B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421964B (en) * 2011-05-03 2014-01-01 Unimicron Technology Corp Substrate cleaning apparatus and substrate cleaning method
TWI568500B (en) * 2011-10-13 2017-02-01 細美事有限公司 Apparatuses for jetting fluid
TWI625156B (en) * 2013-03-12 2018-06-01 三星電子股份有限公司 Substrate treatment systems using supercritical fluid
TWD193794S (en) 2017-11-10 2018-11-01 日商日立全球先端科技股份有限公司 Semiconductor manufacturing device uses infrared lamp heater to penetrate window

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI421964B (en) * 2011-05-03 2014-01-01 Unimicron Technology Corp Substrate cleaning apparatus and substrate cleaning method
TWI568500B (en) * 2011-10-13 2017-02-01 細美事有限公司 Apparatuses for jetting fluid
TWI625156B (en) * 2013-03-12 2018-06-01 三星電子股份有限公司 Substrate treatment systems using supercritical fluid
CN110060942A (en) * 2013-03-12 2019-07-26 三星电子株式会社 Substrate board treatment, base plate processing system and the method for handling substrate
CN110060942B (en) * 2013-03-12 2023-06-27 三星电子株式会社 Substrate processing apparatus, substrate processing system, and method of processing substrate
TWD193794S (en) 2017-11-10 2018-11-01 日商日立全球先端科技股份有限公司 Semiconductor manufacturing device uses infrared lamp heater to penetrate window

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