CN107210245A - Substrate board treatment - Google Patents
Substrate board treatment Download PDFInfo
- Publication number
- CN107210245A CN107210245A CN201580072720.1A CN201580072720A CN107210245A CN 107210245 A CN107210245 A CN 107210245A CN 201580072720 A CN201580072720 A CN 201580072720A CN 107210245 A CN107210245 A CN 107210245A
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- Prior art keywords
- chamber
- substrate
- temperature
- board treatment
- gas
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Abstract
Disclose substrate board treatment.Substrate board treatment of the present invention, it is characterised in that including：Air inlet (300), for the supply processing substrate gas into chamber (101)；Gas outlet (400), for the processing substrate gas into outside discharge chamber (101)；Heater (200), configuration is in chamber (101), for being internally heated to chamber (101)；Temperature controller (500), configure the lateral surface in chamber (101), temperature for controlling chamber wall, wherein, the temperature of the inwall of chamber (101) is maintained at 50 DEG C to 250 DEG C by the temperature controller (500), with prevent from being gasified in the chamber or dry substrate on material condensed on the inwall of the chamber (101).
Description
Technical field
The present invention relates to a kind of substrate board treatment.More specifically, it is related to one kind to possess for control chamber chamber wall temperature
Temperature controller, so as to which the temperature of chamber inner wall is maintained at into set point of temperature, to avoid processing substrate gas or volatilization
The substrate board treatment that property material is condensed on the inwall of chamber.
Background technology
In the substrate board treatment used when manufacturing display device or semiconductor element, the chamber handled substrate
Inside can be supplied and discharge substantial amounts of gas.Scheme for being formed on the formation film on substrate or the film on substrate
Case carries out the purpose such as take a breath to the atmosphere of chamber interior, and these gases can be provided to chamber interior, and from chamber discharge
To outside.
In substrate processing process, the gas that chamber inner wall is possible to be provided to the gas of chamber interior or volatilized from substrate
Body pollution.In processing substrate process, chamber interior needs to keep defined process temperature and process pressure, now, due to
The temperature difference and pressure differential of exterior thereto and chamber interior, it may occur that the phenomenon that gas is condensed on chamber inner wall.It is condensed
Gas repeated evaporation and condensation in the processing substrate process being repeated, or carried out with the gas of other chemical compositions
Reaction, or go bad under specified temp environment, so that chamber inner wall can further be polluted.
As a result, in existing substrate board treatment, in the substrate processing process of the polluter of chamber inner wall after again
It is secondary to evaporate and be flowed on substrate and pollute substrate, so as to reduce the reliability of product, reduce yield rate.
In addition, existing substrate board treatment, needs the polluter on washing chamber inwall or changes chamber wall in itself, because
This, the production cost of product can increase.
The content of the invention
The technical problems to be solved by the invention
The present invention is proposed to solve all problems of above-mentioned prior art, and its object is to provide one kind to make chamber
Chamber interior walls keep set point of temperature, so that the substrate board treatment for avoiding gas from being condensed on chamber inner wall.
In addition, it is an object of the present invention to provide a kind of keep chamber inner wall not contaminated, so as to improve the reliable of product
The substrate board treatment of property and yield rate.
The technical scheme solved the problems, such as
In order to reach above-mentioned purpose, the substrate board treatment that one embodiment of the invention is related to, it is characterised in that including：
Air inlet (inlet), for supplying processing substrate gas into the chamber；Gas outlet (outlet), for being discharged to outside
Processing substrate gas in the chamber；Heater, is configured in the chamber, for being heated to the chamber interior；
And temperature controller, configure the chamber lateral surface, the temperature for controlling chamber wall, wherein, the temperature control
The temperature of the inwall of the chamber is maintained at 50 DEG C to 250 DEG C by device, with prevent the material on the inwall of the chamber it is cold
It is solidifying.
Also, in order to reach above-mentioned purpose, what one embodiment of the invention was related to prevents the method that volatile materials is condensed,
Characterized in that, in substrate board treatment, the temperature controller for control chamber chamber wall temperature makes the inwall of the chamber
Temperature is maintained at 50 DEG C to 250 DEG C, with prevent from being gasified in chamber or dry substrate on material the chamber inwall
Upper condensation.
Invention effect
According to the present invention constituted as described above, chamber inner wall is set to keep set point of temperature, so as to avoid gas in chamber
Condensed on wall.
In addition, the present invention keeps chamber inner wall not contaminated, therefore, it is possible to improve the reliability and yield rate of product.
Brief description of the drawings
Fig. 1 is the integrally-built stereogram for showing the substrate board treatment that one embodiment of the invention is related to.
Fig. 2 is the main sectional view for showing the substrate board treatment that one embodiment of the invention is related to.
Fig. 3 is the sectional view for showing the substrate board treatment that one embodiment of the invention is related to.
Fig. 4 is the skeleton diagram for the action for showing the temperature controller that one embodiment of the invention is related to.
Fig. 5 is to show air inlet that one embodiment of the invention is related to and the sectional view of gas outlet.
Fig. 6 is the state for showing to be formed with material tap on the substrate board treatment that one embodiment of the invention is related to
Stereogram.
Reference
10：Substrate
11：Substrate holder
100：Main body
101：Chamber
110：Door
120：Strengthen rib
200：Heater
210：Primary heater
220：Secondary heater
300：Air inlet
400：Gas outlet
500：Temperature controller
600：Chamber wall heating module
700：Chamber wall refrigerating module
Embodiment
For detailed description of the invention described later, have references to exemplify can implement the attached of the particular embodiment of the present invention
Figure.These embodiments are fully described in detail, so that those skilled in the art can implement the present invention.It will be appreciated that the present invention
Though various embodiments are different from each other, without mutually exclusive.For example, given shape recited herein, structure and characteristic with
One embodiment is related, in the case of without departing from the spirit and scope of the present invention, can be realized by other embodiment.Separately
Outside, it is thus understood that, the position of the discrete structure key element in each disclosed embodiment or configuration the spirit without departing from the present invention with
And can be changed in the case of scope.Therefore, it is described later detailed description be not intended to limit the present invention, the scope of the present invention only with
Claims and its equivalent all scope are limited.Similar reference in accompanying drawing represents same or similar in many-side
Function, for convenience, it is possible to amplification length and area, thickness etc. and its shape are shown.
In this manual, substrate is it is to be understood that including the substrate for display devices such as LED, LCD, semiconductor-based
All substrates of plate, solar cell substrate etc., can preferably be interpreted as, the flexibility for flexible (Flexible) display device
Substrate.
In addition, in this manual, processing substrate process, can it is to be understood that including evaporation process, heat treatment step etc.
To be preferably interpreted as, flexible base board is formed on non-flexible (Non-Flexible) substrate, pattern is formed on flexible substrates, divides
From processes such as flexible base boards.
Below, referring to the drawings, the substrate board treatment that embodiments of the invention are related to is described in detail.
Fig. 1 is the integrally-built stereogram for showing the substrate board treatment that one embodiment of the invention is related to, and Fig. 2 is to show
Go out the main sectional view for the substrate board treatment that one embodiment of the invention is related to, Fig. 3 is to show that one embodiment of the invention is related to
Substrate board treatment sectional view.
Referring to figs. 1 to Fig. 3, the substrate board treatment that the present embodiment is related to can include main body 100, heater 200, air inlet
Mouth (inlet) 300, gas outlet (outlet) 400 and temperature controller 500.
Main body 100 constitutes chamber 101, and the chamber 101 is internally to load substrate 10 and the confined air handled it
Between.The material of main body 100 can be quartzy (Quartz), stainless steel (SUS), aluminium (Aluminium), graphite (Graphite),
In carborundum (Silicon carbide) or aluminum oxide (Aluminium oxide) at least any one.
Multiple substrates 10 (reference picture 2) can be configured with inside chamber 101.Multiple substrates 10 can be each across certain
Interval configuration, is configured in chamber 101 in the way of being supported by substrate holder 11 (reference picture 2) or being placed in cassette (not shown)
Portion.
Gateway 115 is could be formed with the one side (for example, front) of main body 100, the gateway 115 is loading/unloading
The passage of substrate 10.Gateway 115 can only be formed at the one side (for example, front) of main body 100, can also be formed at opposing face
(for example, back side).
Door 110 can be arranged at the one side (that is, the face for being formed with gateway 115) of main body 100.Door could be arranged to can
Enter line slip along fore-and-aft direction, left and right directions or above-below direction.Door 110 can be opened and closed gateway 115, it is of course also possible to logical
Opening and closing gateway 115 is crossed to be opened and closed chamber 101.In addition, can between the formation of door 110 and main body 100 has the face of gateway 115
To be folded with the seal member such as O-ring (O-ring) (not shown), so that gateway 115 is sealed by door 110 completely.
On the other hand, reinforcement rib 120 can be combined with the lateral surface of main body 100.In process, in main body 100
Portion can be because by suppressing or damaged or deformation occur high temperature is influenceed.Therefore, added by being combined on the lateral surface of main body 100
Strong rib 120, it is possible to increase the durability of main body 100.As needed, can also only on specific lateral surface or lateral surface one
Part, which is combined, strengthens rib 120.
Heater 200 can include：Primary heater 210, for being internally heated and formed at substrate to chamber 101
Qi-regulating atmosphere, is directly heated to substrate 10；And secondary heater 220, for preventing the thermal loss inside chamber 101.
Primary heater 210 can on the vertical direction in the direction with loading/unloading carried base board 10 across certain intervals configure,
It can be configured in vertical direction across certain intervals along the stacked direction of substrate 10.Secondary heater 220 can along with dress
The parallel direction in direction for carrying/unloading carried base board 10 is configured on the inwall of chamber 101, and is being hung down along the stacked direction of substrate 10
Nogata is upwards across certain intervals.
Primary heater 210 can include multiple heaters 211 and be arranged at the terminal 212 at each two ends of heater 211, secondary
Heater 220 equally can also include multiple heaters 221 and be arranged at the terminal 222 at each two ends of heater 221.Heater
211st, 221 quantity can carry out various changes according to the size, the size of substrate 10 and quantity of main body 100.
Heater 211,221 has rod (bar) shape that another side is communicated to from the one side of chamber 101, can be hair
Hot material is inserted in the state inside quartz ampoule.For example, the heater 211 of primary heater 210 can be from the left surface of chamber 101
Right flank is communicated to, the heater 221 of secondary heater 220 can be from the front of the chamber 101 in addition to the part of gateway 115 even
Pass to the back side.Terminal 212,222 can receive electric power from outside power supply (not shown), so that heater 211,221 produces heat
Amount.
Therefore, by configuring the heater 200 in the top of substrate 10 and bottom, substrate 10 can be uniformly heated up
All faces, therefore, improve the reliability of processing substrate process.
Referring again to Fig. 1 to Fig. 3, air inlet 300 can be connected to the outside one side of chamber 101 (or main body 100)
(for example, left surface), and gas outlet 400 is connected to the outside another side of chamber 101 (or main body 100) (for example, right side
Face).
Air inlet 300 can provide the passage towards the inside of chamber 101 supply processing substrate gas.Air inlet 300 can be wrapped
Include：Feed tube 320, it is connected with gas storage unit (not shown), for receiving processing substrate gas；And multiple air inlets
Pipe 310, it is perpendicular to feed tube 320 and is formed each other across certain intervals.Air inlet pipe 310 can be with insertion main body 100
And be connected to inside chamber 101, and by the air admission hole 311 for the end for being formed at air inlet pipe 310, processing substrate gas is supplied
To chamber 101.
Gas outlet 400 can provide the passage to the processing substrate gas inside outside discharge chamber 101.Gas outlet 400
It can include：Gas outlet pipe 420, it is connected with outside gas exhausting equipment (not shown), to discharge processing substrate gas
Body；Multiple escape pipes 410, it is formed across certain intervals each other perpendicular to gas outlet pipe 420.Escape pipe 410 can be with
Insertion main body 100 is simultaneously connected to inside chamber 101, and by the venthole 411 for the end for being formed at escape pipe 410, by gas
Outside is expelled to inside chamber 101.
It is preferred that, air admission hole 311 (or air inlet pipe 310) and venthole 411 (or escape pipe 410) are located at configuration respectively
In substrate 10 in chamber 101 and the gap between the adjacent substrate 10 of top or bottom, to store multiple in chamber 101
During substrate 10, processing substrate gas can be supplied uniformly to substrate 10, and be easy to suction processing substrate gas and discharge
To outside.
Referring again to Fig. 1 to Fig. 3, substrate board treatment of the invention, it is characterised in that including：Temperature controller 500,
Configure the lateral surface in chamber 101, the temperature for controlling chamber wall.
Temperature controller 500 is configurable to, adjacent with the lateral surface of chamber wall or across predetermined distance, it is preferable that inside
Portion can make heating agent or pipeline of refrigerant flowing etc. to bend configuration in a zigzag.The effect of temperature controller 500 is, by chamber
101 inner wall temperature is maintained at set point of temperature, to prevent the material volatilized in processing substrate process from substrate 10, be supplied to
Chamber 101 and the material of discharge etc. are condensed on the inwall of chamber 101.It is preferred that, the inner wall temperature of chamber 101 is maintained at 50 DEG C
To 250 DEG C.
Temperature controller 500 can be only fitted to the upper side 510 of chamber wall, left and right sides 520：520a, 520b, lower side
530 and front and rear side door 540,550 on, still, in the case of the purpose of the present invention is reached, i.e., by the interior wall temperature of chamber 101
Degree is maintained in the range of set point of temperature, and temperature controller 500 can not also be configured for the portions of lateral side of chamber 101.
It is used as one, it is assumed that the flexible base board 10 for flexible display apparatus is carried out by the substrate board treatment of the present invention
Processing, then the detailed description at this point for the function of temperature controller in substrate processing process 500 is as follows.
Typically, the manufacturing process of flexible base board 10 can be divided into, in non-flexible substrate formed flexible base board process,
The process that the process of pattern is formed on flexible base board and flexible base board is separated from non-flexible substrate.
The film being made up of polyimides (Polyimide) etc. can be formed in the non-flexible substrates such as glass, plastics, is carried out
Heat treatment makes after its solidification, and solvent is injected in the material of bonding non-flexible substrate and flexible base board to weaken bonding force or decomposition
Adhesive substance, and flexible base board is separated from non-flexible substrate, so as to complete flexible base board.
Now, the solvent composition injected or the solvent in the forming process of flexible base board included in flexible base board into
Divide volatilization, the outside of chamber 101 can be expelled to by gas outlet 400, still, the temperature of the inwall of chamber 101 is possible to relatively low,
So that above-mentioned substance because of the outside of chamber 101 with the temperature difference and pressure differential inside chamber 101 in the certain of the inwall of chamber 101
Part is condensed and can not volatilized.As a result, it may occur that the solvent composition that is condensed on the inwall of chamber 101 pollution chamber 101 or
The problem of substrate 10 being polluted in subsequent handling.Therefore, substrate board treatment of the invention, it is characterised in that by chamber 101
Wall temperature is maintained at the degree for avoiding gas from condensing, so as to wrap gas in solvent-laden chamber 101 not on the inwall of chamber 101
Condense but outside is all expelled to gaseous state.
As one, the material being contained on substrate 10 can be the volatile materials of such as solvent, be at 50 DEG C to 250
The material gasified at DEG C.It is preferred that, such material can be NMP (n-methyl-2-pyrrolidone：N- methyl -2- pyrroles
Alkanone) or IPA, acetone (Acetone), PGMEA (Propylene Glycol Monomethyl Ether
Acetate：Propylene glycol methyl ether acetate) etc. volatile materials.
In order that above-mentioned substance is not to maintain gaseous state to discharge in the internal condensation of chamber 101, in the nature of things,
The inner wall temperature of chamber 101 is remained into the temperature that the material can gasify.Therefore, can connect on temperature controller 500
Connect chamber wall heating module 600 and chamber wall refrigerating module 700.
Fig. 4 is the skeleton diagram for the action for showing the temperature controller 500 that one embodiment of the invention is related to.
Reference picture 4, can be in temperature controller 500, chamber wall heating module 600 and chamber wall refrigerating module 700
Centre sets triple valve (3WV：3way valve).Chamber wall heating module 600 includes that cooling water (PCW can be improved moments：
Process Cooling Water) temperature heat exchanger, it can be understood as, be the dress that cooling water is heated and supplied
Put, chamber wall refrigerating module 700 can be understood as the device of cooling water supply.
As one, when carrying out processing substrate process, substrate process temperature inside chamber 101 can periodically on
Rise, i.e., rise to 150 DEG C from 80 DEG C, 250 DEG C are risen to from 150 DEG C, rise to 350 DEG C etc. from 250 DEG C.At the beginning of processing substrate
Substrate process temperature inside phase, chamber 101 is 80 DEG C or so, and therefore, the temperature of the inwall of chamber 101 is likely to be relatively more
Low is less than 60 DEG C~80 DEG C, and evaporating area is the NMP of one of 80 DEG C~150 DEG C or so of volatile materials, in chamber 101
The possibility condensed on wall is high.Therefore, control triple valve (3WV) initial stage in processing substrate, heated by chamber wall heating module 600
Cooling water is simultaneously supplied to temperature controller 500 (P1), so as to which the temperature of chamber wall to be maintained to NMP minimum evaporating area i.e.
More than 80 DEG C.
When substrate process temperature inside chamber 101 is below 300 DEG C, starts chamber wall heating module 600, work as chamber
When substrate process temperature inside 101 is higher than 300 DEG C, triple valve (3WV) is controlled, from chamber wall refrigerating module 700 to temperature control
The cooling water supply of device 500 (P2) processed, so as to which the temperature of chamber wall is maintained at more than NMP minimum evaporating area i.e. 80 DEG C.
Certainly, if the substrate process temperature inside chamber 101 is higher than 300 DEG C, even if not to the cooling water supply of temperature controller 500,
The temperature of chamber wall can also reach more than 80 DEG C, still, if the excessive temperature of chamber wall rises and 80 DEG C of the evaporating area higher than NMP
~250 DEG C, it is likely that occur chamber wall distortion, it is damaged the problem of, therefore, it is necessary to by chamber wall refrigerating module 700 to
The suitably cooling water supply of temperature controller 500.In other words, the substrate process temperature inside chamber 101 is below 300 DEG C
When, start chamber wall heating module 600, when the substrate process temperature inside chamber 101 is higher than 300 DEG C, start chamber wall cold
But module 700, so as to which the temperature of the inwall of chamber 101 is maintained at into 50 DEG C to 250 DEG C.
In this way, the substrate board treatment of the present invention possesses temperature controller 500, so as to which the temperature of the inwall of chamber 101 is protected
Hold in set point of temperature (that is, the evaporating temperature of gas), so as to prevent gas from being condensed on the inwall of chamber 101.Further, since gas
Body is condensed not on the inwall of chamber 101, but can all be expelled to the outside of chamber 101, therefore, and the inwall of chamber 101 is not
It is contaminated, it is possible to increase the reliability and yield rate of product.
On the other hand, substrate board treatment of the invention can also possess the unit for discharging the gas being condensed.Under
Face, reference picture 5 and Fig. 6 are illustrated.
Fig. 5 is to show air inlet 300 that one embodiment of the invention is related to and the sectional view of gas outlet 400.Fig. 5's
(a) air inlet 300 is shown, Fig. 5 (b) shows gas outlet 400.
It can prevent gas from being condensed on the inwall of chamber 101 by temperature controller 500, still, be connected to chamber
The air inlet 300 and the meeting of gas outlet 400 of 101 outside one side (e.g., left surface) and outside another side (e.g., right flank)
Influenceed by outer low temperature, easily condense gas.The gas temporary condensation being condensed is on the pipeline of air inlet 300, then
When carrying out processing substrate process, with supply processing substrate gas, together spued to chamber 101, it is possible to
Pollute substrate 10.
Therefore, as shown in Fig. 5 (a), air inlet 300 can be further equipped with discharging be condensed gas (or, by
The volatile materials of condensation) drainage port (drain port) 330.Drainage port 330 can be merely that discharge is cold
The passage of the material of solidifying liquid condition, can also possess the suction for being connected and sucking air with pump (not shown) etc.
(suction) function.Gas (g in figure) can be supplied by feed tube 320, and in the internal condensation of air inlet 300
Gas etc. can be discharged (d in figure) by drainage port 330.
Same with air inlet 300, gas outlet 400 can also have is connected with drainage port (not on gas outlet pipe 420
Diagram) structure.
On the other hand, shown in such as Fig. 5 (b), the effect of gas outlet 400 is, the gas inside chamber 101 is expelled to
Outside (g in figure), therefore, can be to outside together while discharging gas (g in figure) inside chamber 101 to outside
Discharge is at gas of the internal condensation of gas outlet 400 etc. (d in figure), without individually possessing drainage port (not shown), and
The end 430 of gas outlet pipe 420 is set to have the function gas outlet of drainage port concurrently.
Fig. 6 is to show to be formed with material tap (hole) on the substrate board treatment that one embodiment of the invention is related to
130：The stereogram of 130a, 130b, 130c, 130d state.
Reference picture 6, at least one side of chamber 101, specifically, except entering of being configured with that reference picture 5 illustrates
Side outside the left surface and right flank of gas port 300 and the chamber of gas outlet 400 101, could be formed with multiple materials
Tap 130：130a、130b、130c、130d.Material tap can be connected to configuration (does not scheme in outside pumping unit
Show), to be effectively discharged out the material in the internal condensation of chamber 101.
By multiple material taps 130 and temperature controller 500, it can prevent gas on the inwall of chamber 101
Condensation, though occur gas condensation situation, also outside can be expelled to by material tap 130, therefore, it is possible to more added with
The pollution of the inwall of chamber 101 is prevented to effect, the reliability and yield rate of product is further improved.
As described above, by preferred embodiment, the present invention is described, but is not limited to the embodiment,
In scope without departing from the spirit of the present invention, the those of ordinary skill of the technical field that the present invention belongs to can carry out various modifications and
Change.It should be regarded as such variation and modification belonged within the scope of claims of the present invention.
Claims (8)
1. a kind of substrate board treatment, it is characterised in that including：
Air inlet (inlet), for supplying processing substrate gas into chamber；
Gas outlet (outlet), for the processing substrate gas into the outside discharge chamber；
Heater, is configured in the chamber, for being heated to the chamber interior；And
Temperature controller, configure the chamber lateral surface, the temperature for controlling chamber wall,
The temperature of the inwall of the chamber is maintained at 50 DEG C to 250 DEG C by the temperature controller, to prevent quilt in the chamber
Material in gasification or the substrate dried is condensed on the inwall of the chamber.
2. substrate board treatment according to claim 1, it is characterised in that
The material is volatile materials, and it gasifies at 50 DEG C to 250 DEG C.
3. substrate board treatment according to claim 1, it is characterised in that
When the substrate process temperature of the chamber interior is below 300 DEG C, start the chamber being connected with the temperature controller
Wall heating module,
When the substrate process temperature of the chamber interior is higher than 300 DEG C, start the chamber wall being connected with the temperature controller
Refrigerating module,
So as to which the temperature of the inwall of the chamber is maintained at into 50 DEG C to 250 DEG C.
4. substrate board treatment according to claim 1, it is characterised in that
The heater includes the bar-shaped heater that another side is communicated to from the one side of the chamber.
5. substrate board treatment according to claim 1, it is characterised in that
Multiple substrates are configured with the chamber.
6. substrate board treatment according to claim 1, it is characterised in that
The air inlet is connected to the one side of the outside of the chamber,
The gas outlet is connected to the another side of the outside of the chamber.
7. substrate board treatment according to claim 6, it is characterised in that
At least one in the air inlet or the gas outlet is further equipped with the port for discharging the material.
8. substrate board treatment according to claim 1, it is characterised in that
At least one in the chamber is formed with multiple material taps sideways.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0161155 | 2014-11-18 | ||
| KR1020140161155A KR101661178B1 (en) | 2014-11-18 | 2014-11-18 | Apparatus for processing wafer |
| PCT/KR2015/012337 WO2016080729A1 (en) | 2014-11-18 | 2015-11-17 | Substrate processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107210245A true CN107210245A (en) | 2017-09-26 |
| CN107210245B CN107210245B (en) | 2020-08-11 |
Family
ID=56014193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580072720.1A Active CN107210245B (en) | 2014-11-18 | 2015-11-17 | Substrate processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR101661178B1 (en) |
| CN (1) | CN107210245B (en) |
| TW (1) | TWI672728B (en) |
| WO (1) | WO2016080729A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113776340A (en) * | 2020-06-09 | 2021-12-10 | 韩国光洋热电系统有限公司 | Chamber cooling unit of heat treatment furnace |
| CN115077211A (en) * | 2021-03-11 | 2022-09-20 | 韩国光洋热电系统有限公司 | Exhaust duct integrated heater unit for heat treatment furnace |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102313969B1 (en) * | 2017-04-24 | 2021-10-19 | 주식회사 원익아이피에스 | Apparatus for processing substrate |
| KR102243270B1 (en) * | 2017-12-07 | 2021-04-22 | 주식회사 원익아이피에스 | Apparatus for processing substrate |
| KR102423268B1 (en) * | 2018-02-20 | 2022-07-21 | 주식회사 원익아이피에스 | Apparatus for processing substrate |
| KR102423269B1 (en) * | 2018-09-06 | 2022-07-21 | 주식회사 원익아이피에스 | Substrate processing apparatus |
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Also Published As
| Publication number | Publication date |
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| KR20160059356A (en) | 2016-05-26 |
| WO2016080729A1 (en) | 2016-05-26 |
| TWI672728B (en) | 2019-09-21 |
| KR101661178B1 (en) | 2016-10-04 |
| CN107210245B (en) | 2020-08-11 |
| TW201630040A (en) | 2016-08-16 |
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