CN103890642A - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
- Publication number
- CN103890642A CN103890642A CN201280051208.5A CN201280051208A CN103890642A CN 103890642 A CN103890642 A CN 103890642A CN 201280051208 A CN201280051208 A CN 201280051208A CN 103890642 A CN103890642 A CN 103890642A
- Authority
- CN
- China
- Prior art keywords
- described body
- substrate board
- board treatment
- substrate
- air supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
Abstract
A substrate processing apparatus is disclosed. In the substrate processing apparatus according to the present invention, ambient gas is uniformly supplied into a main body through a discharge hole of a gas supply pipe installed in the main body, and ambient gas is discharged to the outside through an intake hole of a gas discharge pipe installed in the main body, and through all inner parts of the main body. Thus, ambient gas is uniformly distributed to each portion inside the main body, and the temperature inside the main body is uniform at all portions. Accordingly, the effectiveness and reliability of substrate processing is improved.
Description
Technical field
The present invention relates to a kind of substrate board treatment that can make atmosphere gas distribute equably.
Background technology
Substrate board treatment is applied to the production of flat-panel monitor, and is roughly divided into evaporation (Vapor Deposition) device and annealing (Annealing) device.
Evaporation coating device, as the device that is used to form the transparency conducting layer, insulation course, metal level or the silicon layer that form flat-panel monitor core texture, is divided into the physical vapor deposition device of the mode such as chemical vapor deposition unit and sputter (Sputtering) of the modes such as low-pressure chemical vapor deposition (LPCVD:Low Pressure Chemical Vapor Deposition) or plasma enhanced chemical vapor deposition (PECVD:Plasma-Enhanced Chemical Vapor Deposition).
Annealing device after vapor-deposited film, improves the characteristic of the film after evaporation on substrate, is the annealing device that the film after evaporation is carried out to crystallization or phase change.
Annealing device is roughly divided into single processing formula (Single Substrate Type) that a substrate is heat-treated and the batch-type (Batch Type) that multiple substrates are heat-treated, the batch-type substrate-processing apparatus that use in large batch of production more.
Substrate board treatment comprises: body, is formed with the chamber as processing substrate space therein; Multiple well heaters, are arranged on the inside of described body, for generation of processing the required heat of described substrate; Air supply pipe, for supplying with the atmosphere gas of the required environment of formation processing substrate, as argon (Ar), nitrogen (N
2), hydrogen (H
2) etc.; And gas outlet, for discharge atmosphere gas to outside.
Existing substrate board treatment, be provided for respectively making inflow pipe that atmosphere gas flows in the mutual opposed side of body and another side and for discharging the vent pipe of atmosphere gas, and make atmosphere gas from a side of body flows into, discharge to another side., the atmosphere gas flowing into from body interior one side flows to body interior another side, and discharges to body exterior by the another side of body.
Therefore, existing substrate board treatment, according to the position of body interior, atmosphere gas skewness, thus the temperature that causes body interior is according to different parts and different.Thus, the processing of multiple substrates is mutually different, and the processing of the different parts of a substrate is also different, thereby reduces the reliability of processing substrate technique.
The formerly technology of relevant substrate board treatment, open in Korean granted patent communique 10-0833712 grade.
Summary of the invention
Technical matters
The present invention proposes for the problem that solves prior art as above, the object of the present invention is to provide a kind of substrate board treatment, by atmosphere gas is distributed equably at the different parts of body interior, so that body interior temperature is even, thereby can improve the reliability of processing substrate technique.
Problem solution
To achieve these goals, the substrate board treatment the present invention relates to comprises: body, is formed with the chamber as processing substrate space therein, and is formed with the gateway of coming in and going out for substrate above; Multiple well heaters, are arranged on the inside of described body, for generation of processing the required heat of described substrate; Multiple air supply pipes, are arranged on the inside of described body, and are formed with respectively multiple holes venting one's pent-up feelings, for to described body interior supplying substrate processing atmosphere gas; Multiple gas outlets, are arranged on the inside of described body, and are formed with respectively multiple suction holes, after sucking the described atmosphere gas that flow into described body, discharge.Invention effect
The substrate board treatment the present invention relates to, the hole venting one's pent-up feelings of the air supply pipe of atmosphere gas by being arranged on body interior is supplied to body interior equably, and atmosphere gas is by being arranged on flow through backward outside discharge of all sites of body interior of the suction hole of gas outlet of body interior.Like this, atmosphere gas is distributed in the different parts of body interior equably, and therefore the temperature of the different parts of body interior is even.Thus, can improve the reliability of processing substrate technique.
Brief description of the drawings
Fig. 1 is the stereographic map of the substrate board treatment that relates to of one embodiment of the invention.
Fig. 2 is the stereographic map of the air supply pipe shown in presentation graphs 1 and gas outlet.
Fig. 3 is the face upwarding stereogram of Fig. 2.
Fig. 4 is the right side view of Fig. 1.
Fig. 5 is the right side view of the substrate board treatment that relates to of another embodiment of the present invention.
Embodiment
Below, with reference to accompanying drawing, specific embodiment of the present invention is elaborated.Those skilled in the art describes these embodiment in detail, so that can fully implement the present invention.Although various embodiments of the present invention is different, should not be construed as mutual repulsion.For example, be recorded in given shape, ad hoc structure and the characteristic of this embodiment, do not exceeding on the basis of spirit of the present invention and scope, can embody with the form of other embodiment.And, being interpreted as, position or the setting of the indivedual inscapes in each disclosed embodiment can be changed in the situation that not exceeding spirit of the present invention and scope.Therefore, detailed description described later is not intended to limit, and says exactly, and the content that scope of the present invention is only recorded with claims is as the criterion, and comprises all scopes that the content advocated with its claim is equal to.For convenience's sake, also likely exaggerate the length, area, thickness and the form that show accompanying drawing illustrated embodiment.
Describe referring to accompanying drawing the substrate board treatment that embodiments of the invention relate in detail.
Below the processing substrate of explanation comprises: the technique of heating and cooling base; For all techniques of the regulation of evaporation on substrate film; Regulation film to evaporation on substrate is annealed, all Technologies for Heating Processing of crystallization or phase change.In addition, the material of substrate is had no particular limits, can be formed by materials such as glass, resin, polymkeric substance, silicon wafer or stainless steels.
Fig. 1 is the stereographic map of the substrate board treatment that relates to of one embodiment of the invention.
As shown in the figure, the substrate board treatment that the present embodiment relates to comprises forming the body 110 of outward appearance.Body 110 is roughly rectangular shape, is formed with the enclosure space for the treatment of substrate 50 therein, i.e. chamber.The shape of body 110 is not limited to rectangular shape, can be formed as various shape according to the shape of substrate 50.
Before body 110, be formed with the gateway 113 of coming in and going out for substrate 50, gateway 113 opens and closes by being arranged on body 110 door 115 above.Make described chamber with under the outside state being communicated with, by supporting substrates 50 such as mechanical arms (not shown), so that substrate 50 is loaded into described chamber at door capable of being opened 115.Then close door 115, under the state of the described chamber of sealing, substrate 50 is processed.
On body 110, can be formed with opening portion (not shown), described opening portion opens and closes by lid 117.Be provided with the required parts for the treatment of substrate 50 in the inside of body 110, in the time repairing or replace described parts, open lid 117, described chamber is communicated with outside.
Described parts having heaters 120, air supply pipe 130 and gas outlet 140 etc. that treatment substrate 50 is required.
The left part side and the right part side that are parallel to the well heater 121 of body 110 left and right directions are supported in respectively left surface and the right flank of body 110, and are separately positioned on the front face side, rear side, upper face side of body 110, side below.Be parallel to the leading section side of well heater 123 of body 110 fore-and-aft directions and rearward end side be supported in respectively 113 outsides, gateway body 110 above and the back side of body 110.
Substrate 50 can directly carry and be supported on well heater 121, also can carry and be supported on the supporting pin (not shown) being formed on well heater 121, also can carry and be supported on the independent support component (not shown) or support bar (not shown) that is arranged on body 110 inside.
Referring to figs. 1 through Fig. 4, air supply pipe 130 and gas outlet 140 are described.Fig. 2 is the stereographic map of the air supply pipe shown in presentation graphs 1 and gas outlet, and Fig. 3 is the face upwarding stereogram of Fig. 2, and Fig. 4 is the right side view of Fig. 1.
As shown in the figure, the left part side of air supply pipe 130 is positioned at the left surface outside of body 110, and right part side is supported in right flank through the left surface of body 110, and is arranged on the inside of body 110.Air supply pipe 130 is parallel to the well heater parallel with the left and right directions of body 110 121, and as shown in Figure 4, is arranged on the inner side in the space being formed by well heater 121.In addition, air supply pipe 130 on the above-below direction of body 110 with equidistant setting, simultaneously on the fore-and-aft direction of body 110 with equidistant setting.
On each air supply pipe 130, be formed with the hole 131 multiple venting one's pent-up feelings for the atmosphere gas that spues to body 110 inside, preferably, feel elated and exultant hole 131 downward.In addition, preferably, the left part side of the air supply pipe 130 exposing to the left surface outside of body 110 is interconnected and receives atmosphere gas by a pipeline 133.The pipeline 133 of air supply pipe 130 has the compressed tanks (not shown) etc. of atmosphere gas to be communicated with storage.
The right part side of gas outlet 140 is positioned at the right flank outside of body 110, and left part side is supported in left surface through the right flank of body 110, and is arranged on the inside of body 110.Gas outlet 140 is parallel to the well heater parallel with the right right of body 110 121, and as shown in Figure 4, is arranged on the inner side in the space being formed by well heater 121.In addition, gas outlet 140 on the above-below direction of body 110 with equidistant setting, simultaneously on the fore-and-aft direction of body 110 with equidistant setting.
On each gas outlet 140, be formed with the multiple suction holes 141 for sucking the atmosphere gas that flow into body 110 inside, preferably, suction hole 141 upward.In addition, preferably, the right part side of the gas outlet 140 exposing to the right flank outside of body 110 is interconnected and discharges atmosphere gas by a pipeline 143.The pipeline 143 of gas outlet 140 is communicated in vacuum pump (not shown) side.
For the ease of discharge the atmosphere gas that flow into body 110 from the hole 131 of feeling elated and exultant spues to outside, preferably, the diameter of suction hole 141 is greater than the diameter in the hole 131 of feeling elated and exultant.Because the diameter of suction hole 141 is greater than the diameter in hole 131 of feeling elated and exultant, preferably, the diameter of gas outlet 140 is greater than the diameter of air supply pipe 130.
In addition, feeling elated and exultant the diameter in hole 131 and the diameter of suction hole 141 also can be mutually even, also can be according to the treatment conditions of substrate 50 etc. and mutually inhomogeneous.
As required, can well heater 125 be further set between air supply pipe 130 or between gas outlet 140.Well heater 125 similarly arranges with well heater 121, is parallel to the left and right directions of body 110.
Certainly, to the sealing gap between the gap between the gap between body 110 and well heater 120, body 110 and air supply pipe 130 and body 110 and gas outlet 140.
The substrate board treatment that the present embodiment relates to, the hole venting one's pent-up feelings 131 of the air supply pipe 130 of atmosphere gas by being arranged on body 110 inside can be supplied to body 110 inside equably, and atmosphere gas is by being arranged on flow through backward outside discharge of all sites of body 110 inside of the suction hole 141 of gas outlet 140 of body 110 inside.Like this, atmosphere gas can be distributed in the different parts of body 110 inside equably, therefore the uniform temperature of body 110 inner maintenance.
Fig. 5 is the right side view of the substrate board treatment that relates to of another embodiment of the present invention, at the difference of this explanation and Fig. 4.
As shown in the figure, air supply pipe 230 and gas outlet 240 can be respectively with non-equidistant settings on the fore-and-aft direction of body 210, simultaneously on the above-below direction of body 210 with non-equidistant setting.
The accompanying drawing of above-mentioned embodiments of the invention has omitted detailed lines of outline and has briefly showed, so that understand the part that belongs to technological thought of the present invention.And the above embodiments can not be served as the standard that limits technological thought of the present invention, it is only used to understand the reference item that is contained in the technology item in interest field of the present invention.
Claims (13)
1. a substrate board treatment, is characterized in that, comprising:
Body, is formed with the chamber as processing substrate space therein, and is formed with the gateway of coming in and going out for described substrate above;
Multiple well heaters, are arranged on the inside of described body, for generation of processing the required heat of described substrate;
Multiple air supply pipes, are arranged on the inside of described body, and are formed with respectively multiple holes venting one's pent-up feelings, for the internal feed processing substrate atmosphere gas to described body;
Multiple gas outlets, are arranged on the inside of described body, and are formed with respectively multiple suction holes, after sucking the described atmosphere gas that flow into described body, discharge.
2. substrate board treatment according to claim 1, is characterized in that,
Described well heater is parallel to respectively left and right directions and the fore-and-aft direction of described body,
The left part side and the right part side that are parallel to the described well heater of the left and right directions of described body are supported in respectively left surface and the right flank of described body, and are separately positioned on the front face side, rear side, upper face side of described body, side below,
Be parallel to the leading section side of described well heater of the fore-and-aft direction of described body and rearward end side be supported in respectively outside, described gateway described body above and the back side of described body.
3. substrate board treatment according to claim 2, is characterized in that,
The left part side of described air supply pipe is positioned at the left surface outside of described body, and right part side is supported in the right flank of described body through the left surface of described body,
The right part side of described gas outlet is positioned at the right flank outside of described body, and left part side is supported in the left surface of described body through the right flank of described body.
4. substrate board treatment according to claim 3, is characterized in that,
Described air supply pipe and described gas outlet are arranged on the inner side in the space being formed by described well heater, and described well heater is parallel to the left and right directions of described body.
5. substrate board treatment according to claim 4, is characterized in that,
Described air supply pipe and described gas outlet respectively on the fore-and-aft direction of described body with equidistant setting, simultaneously on the above-below direction of described body with equidistant setting.
6. substrate board treatment according to claim 4, is characterized in that,
Described air supply pipe and described gas outlet respectively on the fore-and-aft direction of described body with non-equidistant setting, simultaneously on the above-below direction of described body with non-equidistant setting.
7. according to the substrate board treatment described in claim 5 or 6, it is characterized in that,
Between described air supply pipe or between described gas outlet, be also provided with described well heater, the left part side of described well heater and right part side are supported in left surface and the right flank of described body, and are parallel to the left and right directions of described body.
8. substrate board treatment according to claim 7, is characterized in that,
The left part side of the described air supply pipe exposing to the left surface outside of described body is interconnected and receives atmosphere gas by a pipeline,
The right part side of the described gas outlet exposing to the right flank outside of described body is interconnected and goes out atmosphere gas by a row of conduits.
9. substrate board treatment according to claim 1, is characterized in that,
The diameter of described suction hole is greater than the diameter in described hole venting one's pent-up feelings.
10. substrate board treatment according to claim 9, is characterized in that,
The diameter in described hole venting one's pent-up feelings and the diameter of described suction hole are mutually even.
11. substrate board treatments according to claim 9, is characterized in that,
The diameter in described hole venting one's pent-up feelings and the diameter of described suction hole are mutually inhomogeneous.
12. according to the substrate board treatment described in claim 10 or 11, it is characterized in that,
Described hole venting one's pent-up feelings is towards downside, and described suction hole is towards upside.
13. substrate board treatments according to claim 12, is characterized in that,
The diameter of described gas outlet is greater than the diameter of described air supply pipe.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110106297A KR101284084B1 (en) | 2011-10-18 | 2011-10-18 | Apparatus for processing substrate |
| KR10-2011-0106297 | 2011-10-18 | ||
| PCT/KR2012/003339 WO2013058454A1 (en) | 2011-10-18 | 2012-04-30 | Substrate processing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103890642A true CN103890642A (en) | 2014-06-25 |
Family
ID=48141077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280051208.5A Pending CN103890642A (en) | 2011-10-18 | 2012-04-30 | Substrate processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101284084B1 (en) |
| CN (1) | CN103890642A (en) |
| WO (1) | WO2013058454A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107210245A (en) * | 2014-11-18 | 2017-09-26 | 泰拉半导体株式会社 | Substrate board treatment |
| CN111326447A (en) * | 2018-12-17 | 2020-06-23 | 圆益Ips股份有限公司 | Substrate processing apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102630347B1 (en) * | 2018-12-17 | 2024-01-30 | 주식회사 원익아이피에스 | Apparatus for processing wafer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101016048B1 (en) * | 2008-07-16 | 2011-02-23 | 주식회사 테라세미콘 | Batch Type Heat Treatment Apparatus |
| KR101120029B1 (en) * | 2009-05-29 | 2012-03-23 | 주식회사 테라세미콘 | Batch Type Substrate Treatment Apparatus |
| JP4967013B2 (en) * | 2009-12-11 | 2012-07-04 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM RECORDING PROGRAM FOR EXECUTING THE SUBSTRATE PROCESSING METHOD |
| KR20110103630A (en) * | 2010-03-15 | 2011-09-21 | 주식회사 티지솔라 | Batch type apparatus for forming epitaxial layer and method for the same |
-
2011
- 2011-10-18 KR KR1020110106297A patent/KR101284084B1/en active IP Right Grant
-
2012
- 2012-04-30 CN CN201280051208.5A patent/CN103890642A/en active Pending
- 2012-04-30 WO PCT/KR2012/003339 patent/WO2013058454A1/en active Application Filing
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107210245A (en) * | 2014-11-18 | 2017-09-26 | 泰拉半导体株式会社 | Substrate board treatment |
| TWI672728B (en) * | 2014-11-18 | 2019-09-21 | 南韓商圓益Ｉｐｓ股份有限公司 | Apparatus for processing wafer |
| CN111326447A (en) * | 2018-12-17 | 2020-06-23 | 圆益Ips股份有限公司 | Substrate processing apparatus |
| CN111326447B (en) * | 2018-12-17 | 2023-08-04 | 圆益Ips股份有限公司 | Substrate processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130042157A (en) | 2013-04-26 |
| WO2013058454A1 (en) | 2013-04-25 |
| KR101284084B1 (en) | 2013-07-10 |
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Application publication date: 20140625 |