KR20150081664A

KR20150081664A - Method of forming vapor deposition layer

Info

Publication number: KR20150081664A
Application number: KR1020140001375A
Authority: KR
Inventors: 김주섭; 박상권
Original assignee: 주식회사 테라세미콘
Priority date: 2014-01-06
Filing date: 2014-01-06
Publication date: 2015-07-15

Abstract

The present invention relates to a vapor deposition film forming method. The method for forming a vapor deposition layer according to the present invention is a method for forming a vapor deposition layer on a substrate 10 and includes the steps of (a) heating the heater 310 to form a vapor deposition layer forming space in the chamber 100 Raising the temperature from a standby temperature, ts, to a first deposition temperature, tl; (b) forming a deposition film on the substrate 10 at a first deposition temperature t1; (c) forming a deposition film on the substrate (10) while lowering the temperature inside the chamber (100) to a second deposition temperature (t2); And (d) stopping the formation of the deposition film and lowering the temperature inside the chamber 100 from the second deposition temperature t2 to the ambient temperature ts.

Description

[0001] METHOD FOR FORMING VAPOR DEPOSITION LAYER [0002]

The present invention relates to a vapor deposition film forming method. More particularly, the present invention relates to a deposition method capable of uniformly forming a deposition layer on a substrate by forming a deposition layer while lowering a temperature inside the chamber and controlling a temperature lowering rate after formation of the deposition layer.

The substrate processing apparatus is used for manufacturing a flat panel display or a solar cell, and is generally divided into a vapor deposition apparatus and an annealing apparatus.

The deposition apparatus is a device for forming a transparent conductive layer, an insulating layer, a metal layer, or a silicon layer which is a core constituent of a flat panel display, and is a chemical vapor deposition (LPCVD) or a plasma enhanced chemical vapor deposition (PECVD) Device and a physical vapor deposition apparatus such as sputtering. Particularly, the low pressure chemical vapor deposition (LPCVD) method has a feature that the flow rate of the raw material gas is high and the molecular motion is large, so that the step coverage of the deposited thin film is high.

FIG. 1 is a view showing heater temperature control in a conventional LPCVD process, and FIG. 2 is a plan view and a cross-sectional view showing a distribution of a deposition film on a substrate according to the prior art.

Referring to FIG. 1, the LPCVD process includes (a) maintaining the temperature inside the chamber at a standby temperature of ts, (b) heating the heater to raise the temperature inside the chamber to the deposition temperature t1, (C) forming a deposition film on the substrate at the deposition temperature t1, (d) stopping the formation of the deposition film and lowering the temperature inside the chamber from t1 to ts, (e) And a step of waiting. Such a structure for controlling the temperature is disclosed in Korean Patent Registration No. 1995-0003893.

Referring to FIG. 2, after the LPCVD process, the thickness of the deposited layer on the edge side 12 is thicker than the thickness of the deposited layer on the center side 11 of the substrate 10. This phenomenon occurs because the temperature of the edge side 12 of the substrate 10 is lower than the temperature of the center side 11 while the temperature inside the chamber is increased by heating the heater disposed outside the inner chamber in which the LPCVD process is performed, The deposition film such as the silicon oxide film is more smoothly formed on the edge side 12 of the substrate 10. [

In the conventional LPCVD process, there is a problem that the thickness of the deposited film formed on the substrate is not uniform. In addition, there is a problem that the electrical characteristics of the semiconductor device are not constant due to non-uniformity of the deposited film thickness and the yield is lowered.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a vapor deposition method capable of forming a vapor deposition layer on a substrate uniformly in an LPCVD process.

It is another object of the present invention to provide a deposition film forming method capable of improving process reliability and yield by uniformly forming the thickness of a vapor deposition film on a substrate, thereby making electrical characteristics of the semiconductor device constant.

The above object of the present invention can be achieved by a method for forming a vapor deposition film on a substrate, the method comprising the steps of: (a) heating a heater to raise a temperature inside a chamber for providing a vapor deposition chamber forming space of the vapor deposition apparatus from a standby temperature to a first vapor deposition temperature Ascending; (b) forming a deposition film on the substrate at the first deposition temperature; (c) forming a deposition film on the substrate while lowering the temperature inside the chamber to a second deposition temperature; And (d) stopping the formation of the vapor deposition film and lowering the temperature inside the chamber from the second vapor deposition temperature to the atmospheric temperature.

The second deposition temperature may be a temperature lower than the first deposition temperature and a deposition film can be formed.

The atmospheric temperature may be in the range of 350 ° C to 500 ° C, and the first deposition temperature may be in the range of 500 ° C to 750 ° C.

The second deposition temperature may be a temperature lower than the first deposition temperature by 50 ° C or less.

The chamber may be divided into a plurality of regions along the height, so that the temperatures of the plurality of regions can be independently controlled.

Wherein the chamber is divided into a first region to a fifth region from the top in accordance with a height, the temperature lowering speed of the step (d) is set to 2.7 to 3.7 占 폚 / min in the first region, To 2.6 占 폚 / min in the first region, and from 3.8 占 폚 / min to 4.8 占 폚 / min in the fifth region.

In the step (c), the thickness of the vapor deposition layer may be thicker than the edge side of the substrate at the center side of the substrate.

The deposition layer may be a silicon oxide layer formed using tetraethoxysilane (TEOS) gas by low pressure chemical vapor deposition (LPCVD).

The above object of the present invention is also achieved by a plasma display apparatus comprising: a chamber for providing a space in which a vapor deposition film of a plurality of substrates is formed; A boat for loading the plurality of substrates; A heater surrounding the periphery of the chamber; A gas supply pipe for supplying a deposition gas into the chamber; And a gas discharge pipe for discharging a deposition gas inside the chamber to the outside, wherein the vapor deposition film is formed on the substrate by using the vapor deposition method of any one of claims 1 to 8 .

According to the present invention configured as described above, a vapor deposition film can be formed on the substrate so as to have a uniform thickness in the LPCVD process.

Further, by uniformly forming the thickness of the vapor deposition film on the substrate, the electrical characteristics of the semiconductor device can be made constant, and the process reliability and yield can be improved.

1 is a view showing heater temperature control in an LPCVD process according to the prior art.
2 is a plan view and a cross-sectional view showing the distribution of the deposition film on the substrate according to the prior art.
3 is a cross-sectional view illustrating the structure of a vertical chemical vapor deposition apparatus according to an embodiment of the present invention.
4 is a view illustrating heater temperature control in an LPCVD process according to an embodiment of the present invention.
5 is a plan view and a cross-sectional view illustrating the distribution of a deposition film on a substrate according to an embodiment of the present invention.
FIG. 6 is a diagram illustrating heater temperature control for each region in a chamber according to an embodiment of the present invention. FIG.
7 is a view showing a thickness distribution of a deposition film on a substrate according to an embodiment of the present invention.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

3 is a cross-sectional view illustrating the structure of a vertical chemical vapor deposition apparatus according to an embodiment of the present invention.

The material of the substrate 10 to be loaded into the vertical chemical vapor deposition apparatus 1 according to an embodiment of the present invention is not particularly limited and may be a substrate made of various materials such as glass, plastic, polymer, silicon wafer, 1) may be loaded. Hereinafter, a circular silicon wafer substrate most commonly used in the field of semiconductor devices or thin film silicon solar cells will be described on the assumption.

In addition, it is assumed that the deposition film according to an embodiment of the present invention is formed using the LPCVD method.

The vertical chemical vapor deposition apparatus 1 can simultaneously perform deposition of a plurality of substrates 10 and includes a chamber 100 for providing a deposition film forming space for the substrate 10, A heat insulating block 320 surrounding the outer periphery of the chamber 100 to form a thermal storage environment in the chamber 100 during the deposition process and a heat insulating block 320 installed on the inner surface of the heat insulating block 320, A gas supply pipe 400 for supplying a gas necessary for deposition of the substrate 10 into the chamber 100 and a gas supply pipe 400 for supplying the gas used for the deposition to the chamber 100. [ And a gas discharge pipe 500 for discharging the gas to the outside of the chamber 100.

The chamber 100 may be divided into a plurality of regions according to the height. The plurality of regions are not structurally partitioned regions, and can be understood as a virtual region evenly divided according to the height of the space inside the chamber 100.

The respective regions can be independently controlled in temperature by the heater 310 disposed in the corresponding region. Particularly, in order to facilitate temperature control, the chamber 100 uniformly has an upper region (first region, Z1), a middle-height region (second region, Z2), a central region (third region, Z3) Middle region (fourth region, Z4), and lower region (fifth region, Z5). Of course, if the deposition film is formed uniformly on the substrate 10 and the chamber 100 is intended for easy control of the temperature, the chamber 100 may be divided into a number of regions other than the five regions will be. Meanwhile, the heater control unit 600 may be further provided to separately control the heaters 310 disposed in the respective regions.

The heater 310 is preferably composed of a plurality of unit pieces so as to surround the outer periphery of the chamber, which is not an integral type, in order to individually control the temperature according to the region of the chamber 100. The heater 310 may be formed by continuously connecting bent portions (e.g., "?" Or "?" Shapes) to a plate-shaped heating element to increase the heating value. In FIG. 3, the heater of two unit bodies is shown as being disposed in each of the regions Z1 to Z5. However, the present invention is not limited thereto. Those skilled in the art can appropriately adjust the number of the heater units There will be.

The deposition process of the present invention using the vertical chemical vapor deposition apparatus 1 configured as described above is performed as follows.

4 is a view illustrating heater temperature control in an LPCVD process according to an embodiment of the present invention.

4, the deposition process of the present invention includes the steps of (a) maintaining the temperature inside the chamber 100 at a standby temperature ts, (b) heating the chamber 310 to heat the chamber 310, (C) forming a vapor deposition film on the substrate 10 at a first deposition temperature t1, (d) heating the inside of the chamber 100 to a temperature Forming a vapor deposition layer on the substrate 10 while lowering the deposition temperature t2 to a second deposition temperature t2; stopping formation of a vapor deposition layer at a second deposition temperature t2; Lowering the temperature from the second deposition temperature t2 to the ambient temperature ts, and (g) waiting for the next process after the deposition process.

In step (a), the boat 200 on which the substrate 10 is mounted moves into the chamber 100 through a gate (not shown) under the chamber 100, and the gate (not shown) 100 to form an enclosed space therein. The heater 310 may operate so that the interior of the chamber 100 can maintain the ambient temperature before the deposition process begins. The atmospheric temperature may be 350 ° C to 500 ° C.

In step (b), the heater 310 may be heated to raise the internal temperature of the chamber 100 to the first deposition temperature t1, which is an appropriate temperature at which the deposition can be performed. The first deposition temperature t1 may be 500 ° C to 750 ° C so that tetraethoxysilane (TEOS) gas reacts with the silicon substrate 10 to form a silicon oxide film.

The heat supply amount of the heater 310 required for each region of Z1 to Z5 inside the chamber 100 may be different while raising the internal temperature of the chamber 100 to the first deposition temperature t1. Particularly, since the opening and closing of the gate (not shown) for entering and exiting the boat 200 and the deterioration of the heat insulating effect on the lower side of the chamber 100 will increase the amount of heat outflow toward the lower side of the chamber 100, The heater control unit 600 can cause the heater 310 disposed in the fifth zone Z5 to generate more heat than the heater 310 disposed in the first zone Z1 to the fourth zone Z4 So that the temperature can be uniformly raised in the entire region of the chamber 100.

Also, up to this stage, a valve for opening and closing the gas supply pipe 400 is closed, and a deposition gas capable of forming a vapor deposition film is not supplied into the chamber 100.

In step (c), the interior of the chamber 100 can maintain the first deposition temperature t1 and simultaneously open the valve of the gas supply pipe 400 to supply the deposition gas into the chamber 100. The deposition gas supplied into the chamber 100 may form a vapor deposition film on the substrate 10. For example, the gas supply pipe 400 may supply a TEOS gas into the chamber 100 to deposit a silicon oxide film on the silicon substrate 10.

The temperature inside the chamber 100 is lowered to the second deposition temperature t2 and the supply of the deposition gas into the chamber 100 is performed in the gas supply pipe 400 so that the substrate 10 The deposition film can be formed continuously.

The second deposition temperature t2 is lower than the first deposition temperature but is the temperature at which the deposition film can be formed on the substrate 10. [ Therefore, the second deposition temperature t2 is set so that the TEOS gas reacts with the silicon substrate 10 to form a silicon oxide film at a temperature lower than the first deposition temperature t1 by 500 ° C to 750 ° C, And can be set between 450 [deg.] C and 700 [deg.] C.

The temperature of the edge side 12 of the substrate 10 is lower than the temperature of the center side 11 while the temperature inside the chamber 100 is increased by heating the heater 310. [ . Therefore, as in the conventional LPCVD process, the deposition film is more smoothly formed on the edge side 12 of the substrate 10, so that the deposition film thickness of the edge side 12 is smaller than the deposition film thickness of the center side 11 of the substrate 10 A phenomenon may occur in which the thickness increases.

However, when the deposition is performed while the temperature is lowered from the first deposition temperature t1 to the second deposition temperature t2 as in the step (d), the temperature of the heater 310 is lowered, The temperature of the side 12 is lower than the temperature of the center side 11, so that the temperature of the center side 11 of the substrate is relatively high. As shown in FIG. 5, in the Ramping Down Deposition (RDD) method of depositing using this phenomenon, the deposition film is formed thicker on the central side 11 of the substrate having a relatively high temperature, The deposition film can be formed to be higher at the center side 11 than at the edge side 12 of the substrate 10. As a result,

In the step (e), the valve of the gas supply pipe 400 is closed at the second deposition temperature t2 to stop the supply of the deposition gas to the chamber 100 to stop the formation of the vapor deposition film. In addition, the valve of the gas discharge pipe 500 may be opened to discharge the gas used for deposition inside the chamber 100 to the outside of the chamber 100.

In step (bar), the temperature inside the chamber 100 can be lowered from the second deposition temperature t2 to the ambient temperature ts. At this time, the temperature lowering speed is controlled for each region of the chamber 100, and the temperature gradient between the center side 11 and the edge side 12 of the substrate 10 is controlled to adjust the thickness of the vapor deposition film formed on the substrate 10 So that it can be made uniform. That is, as the TEOS gas is volatilized in the gaseous state above the substrate 10, the height of the deposition layer at the center side 11, which is formed higher than the edge side 12 of the substrate 10 in step (d) The height of the side 11 and the edge 12 can be made uniform. The temperature lowering speed is 2.7 占 폚 / min to 3.7 占 폚 / min in the first zone Z1, 2.6 占 폚 / min to 3.6 占 폚 / min in the second zone Z2 to the fourth zone Z4, ) At 3.8 캜 / min to 4.8 캜 / min.

In step (g), the temperature inside the chamber 100 is maintained at the ambient temperature ts, and the process waits for the next process.

FIG. 6 is a view showing a heater temperature control according to a region inside a chamber according to an embodiment of the present invention, and FIG. 7 is a view showing a distribution of a vapor deposition film on a substrate formed according to the heater temperature control for each region.

6, the LPCVD process was performed by setting the atmospheric temperature ts to 450 ° C, the first deposition temperature t1 to 630 ° C, and the second deposition temperature t2 to 612 ° C. The chamber 100 is equally divided into five regions from the upper portion to the lower portion and is set as a region from Z1 to Z5.

First, the inside of the chamber 100 was maintained at 450 ° C. at the atmospheric temperature ts for 10 minutes (step (a)), and then constantly increased for 10 minutes until the first deposition temperature t1 at 630 ° C. (b) step]. Then, a TEOS gas was supplied into the chamber 100 at a first deposition temperature t1 of 630 DEG C to deposit a silicon oxide film on the silicon substrate 10 for 13 minutes (step (c)). Then, the deposition was performed for 10 minutes while the temperature inside the chamber 100 was lowered from the first deposition temperature t1 to the second deposition temperature t2 (step (d)). In the step (d), the temperature lowering rate is controlled to 1.97 ° C / min for the Z1 region, 1.95 ° C / min for the Z2 region, 1.94 ° C / min for the Z3 region, 1.62 ° C / min for the Z4 region, and 0.87 ° C / Respectively. Subsequently, the supply of the TEOS gas into the chamber 100 was stopped to stop the formation of the deposition film, and the second deposition temperature t2 was maintained for 30 minutes (Step (e)). Subsequently, the temperature inside the chamber 100 was lowered from the second deposition temperature t2 to the ambient temperature ts for 50 minutes (step (f)). (Bar), the temperature lowering rate is from 2.7 占 폚 / min to 3.7 占 폚 / min in the Z1 region, 2.6 占 폚 / min to 3.6 占 폚 / min in the Z2 to Z4 region and 3.8 占 폚 / min to 4.8 占 폚 / min in the Z5 region, Respectively.

Referring to FIG. 7, the thickness of the film deposited on the substrate 10 is uniformly formed with a deviation of 6 Å or less between the center side 11 and the edge side 12 .

The present invention has the advantage of forming a vapor deposition film while lowering the temperature in the LPCVD process and controlling the temperature lowering rate after formation of the vapor deposition film to uniformly form the vapor deposition film thickness on the substrate. In addition, since the uniformity of the thickness of the deposited film of the semiconductor device having a fine pattern can be improved and the electrical characteristics can be made constant, reliability can be increased in the process, and product yield can be improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

1: vertical chemical vapor deposition apparatus
10: substrate
11: substrate center side
12: substrate edge side
100: chamber
200: Boat
300:
310: Insulation block
320: heater
400: gas supply pipe
500: gas discharge pipe
600: heater controller

Claims

A method of forming a vapor deposition film on a substrate,
(a) heating a heater to raise a temperature inside the chamber from a standby temperature to a first deposition temperature to provide a deposition-film forming space of the deposition apparatus;
(b) forming a deposition film on the substrate at the first deposition temperature;
(c) forming a deposition film on the substrate while lowering the temperature inside the chamber to a second deposition temperature; And
(d) stopping the formation of the deposition film and lowering the temperature inside the chamber from the second deposition temperature to the ambient temperature
Wherein the vapor deposition method comprises the steps of:

The method according to claim 1,
Wherein the second deposition temperature is a temperature lower than the first deposition temperature and capable of forming a vapor deposition film.

3. The method of claim 2,
Wherein the atmospheric temperature is from 350 ° C to 500 ° C, and the first deposition temperature is from 500 ° C to 750 ° C.

The method of claim 3,
Wherein the second deposition temperature is lower than the first deposition temperature by 50 占 폚.

The method according to claim 1,
Wherein the chamber is divided into a plurality of regions along a height of the chamber, and the falling temperatures of the plurality of regions are independently controlled.

6. The method of claim 5,
Wherein the chamber is divided into a first region to a fifth region from the top in accordance with a height, and the temperature lowering rate in the step (d) is set to 2.7 캜 / min to 3.7 캜 / min in the first region, 7. The method for forming a vapor-deposited film according to claim 6, wherein the second region is controlled at 2.6 占 폚 / min to 3.6 占 폚 / min in the fourth region and at 3.8 占 폚 / min to 4.8 占 폚 / min in the fifth region.

The method according to claim 1,
Wherein the thickness of the deposition layer is greater at the center of the substrate than at the edge of the substrate in the step (c).

The method according to claim 1,
Wherein the deposition film is a silicon oxide film formed using tetraethoxysilane (TEOS) gas by low pressure chemical vapor deposition (LPCVD).

A chamber for providing a space in which a vapor deposition film of a plurality of substrates is formed;
A boat for loading the plurality of substrates;
A heater surrounding the periphery of the chamber;
A gas supply pipe for supplying a deposition gas into the chamber; And
A gas discharge pipe for discharging the deposition gas inside the chamber to the outside
/ RTI >
An apparatus for manufacturing a vapor deposition film for forming a vapor deposition film on a substrate using the vapor deposition method of any one of claims 1 to 8.