KR102630347B1 - Apparatus for processing wafer - Google Patents

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus according to the present invention can control gas flow during the substrate processing process to improve temperature uniformity and prevent particles from flowing into the processing space.

Description

Substrate processing device {APPARATUS FOR PROCESSING WAFER}

The present invention relates to a substrate processing device. More specifically, it relates to a substrate processing device that can control gas flow during a heat treatment process to improve temperature uniformity and prevent particles from entering the processing space.

In a substrate processing apparatus used in the manufacture of display devices or semiconductor devices, a large amount of gas may be supplied and discharged inside a processing space where substrates are processed. This gas can be supplied to the inside of the processing space for the purpose of forming a thin film on a substrate, forming a pattern in a thin film on a substrate, or ventilating the atmosphere inside the processing space. After completing the substrate processing process, the gas inside the processing space may be discharged to the outside.

In order to obtain high-quality products in the heat treatment process, it is necessary to control the temperature to minimize the in-plane temperature deviation of the substrate. However, existing equipment generally forms an airflow from left to right for each slot within the internal space of the main body, that is, the processing space where substrates are processed. To form a so-called laminar flow, gas supply and discharge are performed on opposite sides of the processing space. However, there was a problem in that the temperature between the left and right sides differed due to heat transfer, or that the upper part of the processing space cooled relatively more slowly than the lower part during cooling, resulting in a temperature deviation. In addition, there was an area where the pressure in the processing space was lower than the outside due to the airflow from left to right. Since these areas of low pressure are under negative pressure with respect to the outside, problems may occur that allow external particles to flow into the processing space.

Additionally, in the existing equipment, gas supplied to the processing space or volatilized from the substrate during the substrate processing process may contaminate the inner wall of the main body. During the substrate processing process, the processing space needs to maintain a predetermined process temperature and process pressure. At this time, gas may condense on the inner wall of the main body due to the temperature and pressure difference between the outside and the inside of the main body. The condensed gas may further contaminate the inner wall of the main body by repeating evaporation and condensation during repeated substrate processing processes, reacting with gases of other chemical components, or deteriorating under certain temperature environments, and flowing into the substrate and contaminating the substrate. There was a problem with Shiki.

The present invention was conceived to solve the problems of the prior art as described above, and its purpose is to provide a substrate processing device that can improve the temperature deviation within the substrate surface and the temperature deviation in the processing space.

Another object of the present invention is to provide a substrate processing device that prevents particles from entering the processing space from the outside by maintaining a high internal pressure in the processing space.

Another object of the present invention is to provide a substrate processing device that can improve the temperature difference between upper and lower slots by moving heat by forming an airflow from the top to the bottom during cooling.

In addition, the purpose of the present invention is to provide a substrate processing device that can increase product reliability and yield by preventing gas from condensing on the inner wall of the main body and preventing contamination of the inner wall of the main body and the substrate.

The above object of the present invention is to provide a main body that provides an internal space and has an exhaust port; a partition disposed in the internal space at a predetermined distance from a side wall of the main body to form a processing space in which a plurality of substrates are processed; a process gas supply unit at least partially disposed within the processing space through a side wall of the main body and the partition wall and including a plurality of process gas supply pipes that inject process gas into the processing space; a substrate supporter disposed so as not to interfere with the process gas supply pipe and supporting the plurality of substrates to be spaced apart from each other along a vertical direction; A heater unit for heating the substrate supported on the substrate support unit, wherein the exhaust port communicates with a space between a side wall of the main body and the partition wall, is achieved by a substrate processing apparatus.

Additionally, according to one embodiment of the present invention, the partition wall includes: an upper partition disposed at a predetermined distance apart from the upper wall of the main body; It may include side partitions disposed at a predetermined distance apart from the left wall, right wall, and rear wall of the main body.

Additionally, according to one embodiment of the present invention, the process gas supply unit includes a process gas connector that receives process gas from the outside; a plurality of process gas supply pipes passing through the main body and the partition wall and arranged at predetermined intervals; It may include a process gas distribution pipe on one side of which is connected to the process gas connection pipe and on the other side connected to the plurality of process gas supply pipes.

In addition, according to an embodiment of the present invention, the process gas connection pipe and the process gas distribution pipe are respectively installed on both sides of the main body to supply process gas to the process gas supply pipe.

Additionally, according to one embodiment of the present invention, the process gas supply pipe may have a plurality of discharge holes formed at least in positions corresponding to substrates placed in the processing space.

Additionally, according to an embodiment of the present invention, when a plurality of substrates are arranged to be spaced apart from each other along a vertical direction in the processing space, the process gas supply pipe may be located at least on top of the substrates.

Additionally, according to one embodiment of the present invention, the process gas supply pipe includes: a first pipe having a plurality of first discharge holes formed along the longitudinal direction on the outer circumference; and a second pipe having a smaller diameter than the first pipe, disposed within the first pipe, and having a plurality of second discharge holes formed on the outer circumference.

Additionally, according to an embodiment of the present invention, the first discharge hole and the second discharge hole may be formed to be offset.

Additionally, according to one embodiment of the present invention, a dispersion cap having a plurality of dispersion holes formed on its outer circumferential surface may be disposed at the end of the process gas supply pipe.

Additionally, according to one embodiment of the present invention, the exhaust port may be formed on a lower side wall of the main body or a lower part of the side wall in a space between the side wall of the main body and the partition wall.

Additionally, according to one embodiment of the present invention, the exhaust port may be formed at a lower position than the process gas supply unit.

Additionally, according to one embodiment of the present invention, the insulation plate can be installed in close contact with the inner wall of the main body.

Additionally, according to an embodiment of the present invention, a plurality of holes through which the process gas supply pipe passes are formed in the partition wall, and the diameter of the holes may be the same as or larger than the diameter of the process gas supply pipe.

In addition, according to one embodiment of the present invention, a plurality of support bars are installed to penetrate the side wall of the main body and the partition wall, and one or a plurality of support bars are installed on a pair of support bars facing each other at the front and rear of the processing space. The substrate support may be supported.

In addition, according to one embodiment of the present invention, some of the heater units installed to penetrate the side wall of the main body and the partition are used as the support bar, and a pair of heater units facing each other at the front and rear of the processing space are installed. One or more of the substrate supports may be supported.

Additionally, according to one embodiment of the present invention, the support bar has a hollow interior, and the heater unit can be inserted into the support bar.

In addition, according to one embodiment of the present invention, the heater unit includes a plurality of heater units installed to penetrate the side wall of the main body and the partition wall, and the heater unit and the process gas supply pipe may be disposed on the same horizontal plane. there is.

According to the present invention configured as described above, there is an effect of improving the temperature difference in the processing space.

In addition, the present invention has the effect of preventing particles from flowing into the processing space from the outside by maintaining the internal pressure of the processing space high.

In addition, the present invention has the effect of improving the temperature difference between the upper and lower slots by moving heat by forming an airflow from the upper to the lower direction during cooling.

In addition, the present invention has the effect of increasing product reliability and yield by preventing gas from condensing on the inner wall of the main body and preventing contamination of the inner wall of the main body and the substrate.

1 is a schematic diagram showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a schematic diagram showing a front cross-section of a substrate processing apparatus according to an embodiment of the present invention and a process gas flow in a heat treatment process.
3 is a schematic diagram showing a side of a substrate processing apparatus according to an embodiment of the present invention.
Figure 4 is an enlarged schematic diagram of the upper part of a substrate processing apparatus according to an embodiment of the present invention.
Figure 5 is an enlarged schematic diagram of the lower part of a substrate processing apparatus according to an embodiment of the present invention.
Figure 6 is a schematic diagram showing a form of supporting a substrate according to an embodiment of the present invention.
Figures 7 and 8 are an enlarged schematic perspective view and front cross-sectional view of a portion of the process gas supply unit (second gas supply unit) according to an embodiment of the present invention.
FIG. 9 is an enlarged schematic perspective view and front view of portions A of FIG. 7 and B of FIG. 8.
Figure 10 is a schematic perspective view and side cross-sectional view of a process gas supply pipe (second gas supply pipe) according to various embodiments of the present invention.
Figure 11 is a schematic diagram showing an air gas flow in a cooling process according to an embodiment of the present invention.

The detailed description of the present invention described below refers to the accompanying drawings, which show by way of example specific embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different from one another but are not necessarily mutually exclusive. For example, specific shapes, structures and characteristics described herein with respect to one embodiment may be implemented in other embodiments without departing from the spirit and scope of the invention. Additionally, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. Accordingly, the detailed description that follows is not intended to be taken in a limiting sense, and the scope of the invention is limited only by the appended claims, together with all equivalents to what those claims assert, if properly described. Similar reference numerals in the drawings refer to identical or similar functions across various aspects, and the length, area, thickness, etc. may be exaggerated for convenience.

In this specification, a substrate can be understood to include all substrates such as substrates, semiconductor substrates, and solar cell substrates used in display devices such as LED and LCD, and is preferably used in flexible display devices. It can be understood to mean a flexible substrate.

In addition, in this specification, the substrate treatment process can be understood to include a deposition process, a heat treatment process, etc., and preferably includes forming a flexible substrate on a non-flexible substrate and forming a pattern on a flexible substrate. , can be understood to mean a series of processes such as separation of the flexible substrate, and more preferably, a process of heat treating and drying the flexible substrate.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the attached drawings.

Figure 1 is a schematic diagram showing the overall configuration of a substrate processing apparatus 100 according to an embodiment of the present invention. FIG. 2 is a schematic diagram showing a front cross-section of the substrate processing apparatus 100 according to an embodiment of the present invention and a process gas flow in a heat treatment process. Figure 3 is a schematic diagram showing a side of the substrate processing apparatus 100 according to an embodiment of the present invention. Figure 4 is an enlarged schematic diagram of the upper part of the substrate processing apparatus 100 according to an embodiment of the present invention. Figure 5 is an enlarged schematic diagram of the lower part of the substrate processing apparatus 100 according to an embodiment of the present invention.

Referring to FIGS. 1 to 5 , the substrate processing apparatus according to this embodiment may include a main body 110, a heater unit 200, a gas supply unit 300 and 400, and a gas discharge unit 500.

The main body 110 provides an internal space, and also provides a processing space 101 in which the substrate 10 is loaded and processed. In this specification, the space where substrate processing is actually performed within the main body 110 may be a space formed by the inner surfaces of the partition walls 150 and 170, even within the internal space of the main body 110. In other words, the 'airflow space' (upper airflow region (TR) and side airflow region (SR)) formed between the outer surface of the partition walls 150 and 170 and the inner surface of the main body 110 is the 'processing space' where substrate processing is performed. 'It can be understood as a separate space.

The main body 110 has an approximately hexahedral shape, and the material of the main body 110 is quartz, stainless steel (SUS), aluminum, graphite, silicon carbide, or aluminum oxide. oxide).

A plurality of substrates 10 may be disposed in the processing space 101 . The plurality of substrates 10 are arranged at regular intervals, and are supported and seated on a substrate support 190 (see FIG. 6) such as a ladder, substrate holder, or boat to form a processing space 101. Can be placed inside. In FIGS. 1 and 2 , only a portion of the substrate 10 is shown for convenience in explaining other configurations. Each substrate 10 occupies one slot (S) space and may be heat treated, but is not limited to this, and two or more substrates 10 may be stacked and arranged to occupy one slot (S) space. there is.

An entrance 105, which is a passage for loading/unloading the substrate 10, may be formed on one side (eg, the front) of the main body 110. The entrance 105 may be formed only on one side (eg, the front) of the main body 110, and may also be formed on the opposite side (eg, the back).

A door (not shown) may be installed on one side of the main body 110 (i.e., the side where the entrance 105 is formed). The door can be installed to be able to slide forward and backward, left and right, or up and down. The door can open and close the entrance 105, and the processing space 101 can also be opened and closed depending on whether the entrance 105 is opened or closed. Additionally, a sealing member (not shown) such as an O-ring may be interposed between the door and the surface of the main body 110 where the entrance 105 is formed so that the entrance 105 is completely sealed by the door.

Meanwhile, reinforcing ribs 111 and 112 may be coupled to the outer surface of the main body 110. The main body 110 may be damaged or deformed under the influence of strong internal pressure or high temperature during the process. Therefore, the durability of the main body 110 can be improved by combining the reinforcing ribs 111 and 112 on the outer surface of the main body 110. If necessary, the reinforcing ribs 111 and 112 may be combined only on a specific outer surface or a portion of the outer surface.

A plurality of through holes 115 may be formed in the wall of the main body 110. A through hole 115 is formed in the corresponding portion of the wall of the main body 110 so that each component of the first gas supply unit 300 and the second gas supply unit 400 can communicate with the processing space 101 from the outer wall of the main body 110. ) can be formed. A sealing means (not shown) may be further provided around the through hole 115 to prevent leakage of substrate processing gas.

An insulation plate 120 may be installed on the inner wall of the main body 110. The insulating plate 120 not only serves as an inherent insulator to prevent heat loss in the processing space 101, but also serves to maintain the temperature of the inner wall of the main body 110. For this purpose, it is preferable that the insulation plate 120 is installed in close contact with the inner wall of the main body 110 without leaving a space between it. In addition, if there is a space between the insulation plate 120 and the main body 110, eddy currents of gas may occur within the space, which may cause temperature unevenness. However, if the insulation plate 120 and the inner wall of the main body 110 are in close contact, the problem of eddy currents is solved. It can be. The insulating plate 120 can be made of any known insulating material without limitation, but it is preferable to use a material that has little thermal deformation.

The insulation plate 120 is configured so that the heater unit 200, the first gas supply unit 300, and the second gas supply unit 400, which are communicated from the outer wall of the main body 110 to the processing space 101, which will be described later, can pass through. A hole 121 may be formed in a corresponding portion of the insulator 120. The hole 121 may be formed at a position corresponding to the through hole 115.

The insulation plate 120 is in close contact with the inner wall of the main body 110 and substantially constitutes the inner wall of the main body 110, and the insulation plate 120 itself may contain heat. In other words, during the heat treatment process, the heat applied by the heater unit 200 to the processing space 101 is not easily released to the outside, and the insulation plate 120 may contain heat. Therefore, even if no additional heat is applied to the inner wall of the main body 110, the heat contained in the insulation plate 120 can cause volatile substances to be described later to exist in a gaseous state without condensing on the inner wall of the main body 110.

Preferably, the inner surface of the insulation plate 120 can maintain a temperature of 50°C to 250°C to prevent volatile substances from condensing. For example, during the substrate processing process, the substrate processing temperature in the processing space 101 (or main body 110) may gradually increase from 80°C to 150°C, from 150°C to 250°C, from 250°C to 350°C, etc. there is.

If the substrate processing temperature in the processing space 101 exceeds 150°C, there is a small possibility that NMP (N-Methyl Pyrrolidone), one of the volatile substances with an evaporation zone of about 80 to 150°C, will condense on the inner wall of the main body 110. . However, if the substrate processing temperature is lower than this, the temperature of the inner wall of the main body 110 becomes relatively lower, so there is a high possibility that volatile substances will condense on the inner wall of the main body 110. Even in this case, if the insulating plate 120 is in close contact with the inner wall of the main body 110, the insulating plate 120 itself contains heat, and thus volatile substances can be prevented from condensing on the inner wall of the main body 110. .

Ultimately, volatile substances exist in a gaseous state around the insulation plate 120 (or in the upper airflow region (TR) and side airflow region (SR)) and may not condense on the inner wall of the main body 110. Volatile substances in a gaseous state can be discharged into the gas discharge unit 500 according to the airflow in the upper airflow region (TR) and the side airflow region (SR).

The partition walls 150, 160, and 170 may be arranged to be spaced a predetermined distance apart from the inner wall of the main body 110. As an example, the upper partition wall 150 may be arranged to be spaced a predetermined distance apart from the upper wall of the main body 110, and the side partition wall 170 may be arranged to be spaced a predetermined distance apart from the left wall, right wall, and rear wall of the main body 110. You can. Each of the partition walls 150 and 170 may be connected to each other. A lower partition wall 160 is further disposed at a predetermined distance apart from the lower wall of the main body 110 and may be interconnected with the upper and side partition walls 150 and 170.

The internal space formed by the partition walls 150 and 170 can substantially perform substrate processing, and the airflow space formed between the partition walls 150 and 170 and the inner wall of the main body 110 (upper airflow region TR and The side airflow region (SR)] can be used as a path through which airflow gas, which will be described later, passes.

The side partition 170 is provided so that the components of the first gas supply unit 300 and the second gas supply unit 400 that communicate from the outer wall of the main body 110 to the processing space 101, which will be described later, can pass. A hole 171 may be formed in the corresponding portion of . Additionally, a hole 172 may be formed in a corresponding portion of the side partition 170 so that the heater unit 200 communicating from the outer wall of the main body 110 to the processing space 101 can pass.

Figure 6 is a schematic diagram showing a form of supporting a substrate according to an embodiment of the present invention.

Referring to Figures 6 (a) and (b), the substrate 10 may be loaded on a substrate supporter 190 such as a ladder. A plurality of semicircular locking pieces 191 are formed at the corners of the substrate support 190 and can be inserted and coupled to the outer periphery of the support bar 195. Thus, the substrate support part 190 is stably mounted on the support bar 195, and can be separated from the support bar 195 simply by lifting the substrate support part 190 upward. A plurality of support pins 192 are formed on the plurality of substrate supports 190 to support the lower portion of the substrate 10. Specific details of the substrate support unit 190 are provided in Korean Patent Application Nos. 10-2011-0030216, 10-2011-0034246, 10-2012-0006023, and 10-2012-0006024 of the present applicant. It can be considered incorporated as a whole.

The support bar 195 may be installed by passing through a plurality of through holes 115 formed in the wall of the main body 110 and the hole 172 of the side partition 170. The fixing portions 196 at both ends of the support bar 195 may be coupled to the outer wall of the main body 110 to fix the support bar 195.

According to another embodiment, the heater unit 210, which will be described later, may perform the role of the support bar 195. One or more substrate supports 190 are supported on the heater unit 210, and the substrate 10 can be loaded on the substrate supports 190.

According to another embodiment, the inside of the support bar 195 has an empty shape (or a hollow tube shape), and the heater unit 210 can be inserted into the support bar 195. While one or more substrate supports 190 are supported on the support bar 195, heating of the substrate 10 may be performed by the heater unit 210 inside the support bar 195.

Referring to (b) of FIG. 6, the heater unit 210 and the second gas supply pipe 430, which will be described later, occupy the same horizontal surface and may be alternately arranged at predetermined intervals. The heater unit 210 may be placed at the top and bottom of the slot (S), and the second gas supply pipe 430 may be placed at the top and not at the bottom of the slot (S). Additionally, the substrate 10 (and the substrate support 190) may be disposed between a specific horizontal plane and another horizontal plane adjacent thereto. As above, there is an advantage in improving productivity by minimizing the pitch between slots S by having the heater unit 210, the second gas supply pipe 430, etc. occupy the same horizontal surface.

The heater unit 200 may heat the processing space 101 to create a substrate processing atmosphere and heat the substrate 10. A plurality of heater units 210 may pass through the heater through hole 201 formed in the main body 110 and may be disposed in the processing space 101 . The through hole 201 may be formed at a position corresponding to the hole 172 of the side partition 170. As an example, the plurality of heater units 210 may be arranged at regular intervals in a direction perpendicular to the loading/unloading direction of the substrate 10, and may be arranged at regular intervals vertically along the stacking direction of the substrate 10. It can be placed while having.

In FIGS. 1 to 3 , only some heater units 210 are shown for convenience of explanation of other configurations. However, heater units 210 may be inserted into all heater through-holes 201 to form the heater unit 200 . Accordingly, the entire surface of the substrate 10 can be uniformly heated by the heater unit 200 disposed at the top and bottom, which has the advantage of improving the reliability of the substrate processing process.

In addition, a sub-heater unit (not shown) is installed in the processing space 101 (or the inner wall of the main body 110) in a direction parallel to the loading/unloading direction of the substrate 10 along the stacking direction of the substrate 10. They may be placed vertically at regular intervals.

The heater unit 210 has a bar shape that communicates from one side of the main body 110 to the other side, and may have a heating element inserted inside a quartz tube. As an example, the heater unit 210 may communicate from the left side to the right side of the main body 110, and the sub heater unit (not shown) may communicate from the front to the rear of the main body 110 excluding the entrance 105. You can. The terminal receives power from an external power source (not shown) and allows the heating element to generate heat. The number of heater units 210/sub heater units may vary depending on the size of the main body 110 and the size and number of substrates 10.

Meanwhile, the heater unit 200 is not limited to the above-described form and may heat the substrate 10 in a form embedded in the partition walls 150, 160, 170, the inner wall of the main body, etc.

The gas supply units 300 and 400 may be connected to the upper part of the main body 110 and the side of the main body 110. The gas supply units 300 and 400 may include a first gas supply unit 300 and a second gas supply unit 400.

The first gas supply unit 300 may be connected to the upper part of the processing space 101 to supply the first gas. The first gas supplied from the first gas supply unit 300 is mostly not involved in the direct processing process of the substrate 10, and is mostly used in the upper part (upper airflow region (TR)) and the side (side airflow region) of the processing space 101. (SR)] may contribute to the formation of air flow. Hereinafter, the first gas supplied from the first gas supply unit 300 is referred to as 'air flow gas' (CG) (see FIG. 11). Additionally, the names of the first gas supply unit 300 and 'air flow gas supply unit' 300 are used interchangeably.

The first gas upper supply pipe 310 (airflow gas upper supply pipe 310) of the first gas supply unit 300 (airflow gas supply unit 300) receives airflow gas from the external airflow gas supply means 30 and processes it. It can be supplied to space 101. The path of the first gas upper supply pipe 310 may pass through the upper part of the main body 110 and communicate with the processing space 101. Airflow gas may be supplied from the first upper gas supply pipe 310 to the upper airflow region TR of the processing space 101 .

The airflow gas supplied to the upper airflow region TR is blocked by the upper partition 150 and is restricted from being directly sprayed onto the upper part of the substrate 10 . The airflow gas may spread in the upper airflow region TR defined by the upper side partition 150 and then move to the side airflow region SR partitioned by the side partition 170 . That is, the side partition 170 may be connected to the upper partition 150 at a corner portion so that the upper airflow region TR and the side airflow region SR communicate with each other.

The first gas supply unit 300 may be further connected to the side of the main body 110. The first gas connection pipe 320 (airflow gas connection pipe 320) and the first gas side supply pipe 330 (airflow gas side supply pipe 330) may be further connected. The first gas connection pipe 320 may receive airflow gas from an external airflow gas supply means 30 and distribute the airflow gas to at least one first gas side supply pipe 330 . The first gas connection pipe 320 extends vertically along the left and right outer walls of the main body 110, and the first gas side supply pipe 330 extends horizontally along the left and right outer walls of the main body 110. It can be. The interior of the first gas side supply pipe 330 is connected to the first gas connection pipe 320 to receive airflow gas. In the first gas side supply pipe 330, the airflow gas is distributed through various paths, and each path may pass through the side of the main body 110 and communicate with the processing space 101. Accordingly, airflow gas can be further supplied from the first gas side supply pipe 330 to the side airflow region SR.

The airflow gas is in the space TR between the upper wall of the main body 110 and the outer surface of the upper partition wall 150, and between the left wall, right wall, and rear wall of the main body 110 and the outer surface of the side partition wall 170. It may move downward along the space and be discharged to the gas discharge unit 500 through the exhaust port 501.

7 and 8 are enlarged schematic perspective views and front cross-sectional views of the process gas supply unit 400 (second gas supply unit 400) according to an embodiment of the present invention. FIG. 9 is an enlarged schematic perspective view and front view of portions A of FIG. 7 and B of FIG. 8. Figure 10 is a schematic perspective view and side cross-sectional view of the process gas supply pipe 430 (second gas supply pipe 430) according to various embodiments of the present invention.

The second gas supply unit 400 is connected to the side of the main body 110 and penetrates the side of the main body 110 and the partition wall 170, and at least a portion of the second gas supply unit 400 is disposed in the processing space, supplying the second gas to the processing space 101. can be supplied. A pair of second gas supply units 400 may be installed on opposing outer walls of the main body 110.

The second gas supplied from the second gas supply unit 400 may be involved in a direct processing process of the substrate 10. Hereinafter, the second gas supplied from the second gas supply unit 400 is referred to as 'process gas' (PG) (see FIG. 2). Additionally, the second gas supply unit 400 is interchangeably referred to as the 'process gas supply unit' 400. The process gas uses an inert gas such as N ₂ and may contribute to the heat treatment of the substrate 10 .

One end of the second gas connector 410 (process gas connector 410) of the second gas supply unit 400 (process gas supply unit 400) is connected to an external process gas supply means 50 to provide process gas. is supplied, and the other end is connected to the second gas distribution pipe 420 (process gas distribution pipe 420) to transmit process gas (PG).

The second gas distribution pipe 420 is formed in a vertical direction and may provide a space between the inner side and the outer wall of the main body 110 that can be filled with process gas (PG). Inside the second gas distribution pipe 420, a plurality of second gas supply pipes 430 (process gas supply pipes 430) may be connected at intervals in the vertical direction. Process gas (PG) filled between the second gas distribution pipe 420 and the outer wall of the main body 110 may be distributed to each second gas supply pipe 430. A pair of opposing second gas distribution pipes 420 are respectively connected to one end and the other end of the second gas supply pipe 430 to supply process gas (PG) to both ends of the second gas supply pipe 430.

Additionally, in another embodiment, the second gas distribution pipe 420 may be formed in a horizontal direction and provide a space between the inner side and the outer wall of the main body 110 that can be filled with process gas PG. Inside the second gas distribution pipe 420, a plurality of second gas supply pipes 430 (process gas supply pipes 430) may be connected at intervals in the horizontal direction. In addition, in another embodiment, the second gas distribution pipe 420 is formed in a vertical and horizontal direction, and the inside of the second gas distribution pipe 420 is a plurality of second gas supply pipes 430 (process gas supply pipe 430 )] may be connected at intervals in the vertical and horizontal directions.

The second gas supply pipe 430 is disposed to penetrate the side wall and the partition wall 170 of the main body 110 and can inject the process gas (PG) into the processing space 101. In particular, as the second gas supply pipe 430 injects the process gas (PG) into the processing space 101, the pressure of the processing space 101 may be higher than that of the outside. In other words, during the substrate processing process, the processing space 101 partitioned by the partition walls 150, 160, and 170 is a space formed between the partition walls 150 and 170 and the inner wall of the main body 110 [upper airflow region (TR) and side airflow region (SR)] or maintain a positive pressure state where the pressure is higher than the outside of the main body 110, which has the effect of preventing particles from flowing into the inside of the processing space 101.

Since the second gas supply pipe 430 penetrates the processing space 101, a hole 171 may be formed in the side partition 170, and the diameter of the hole 171 is the diameter of the second gas supply pipe 430. It can be formed the same as or larger than. In particular, when the diameter of the hole 171 is formed larger than the diameter of the second gas supply pipe 430, a gap GP may occur between the hole 171 and the outer circumference of the second gas supply pipe 430. This gap GP may act as a passage through which the process gas PG can escape into the space between the side partition 170 and the inner wall of the main body 110 (side airflow region SR). Of course, the diameter of all the holes 171 does not need to be larger than the diameter of the second gas supply pipe 430, and only some of the holes 171 may have the gap GP. Meanwhile, the side partition 170 may further include a separate hole (not shown) through which the process gas PG can escape into the side airflow region SR.

Each second gas supply pipe 430 is preferably disposed at a predetermined interval in the horizontal direction at the top and bottom of the slot S space. Therefore, the process gas can be sprayed from the top and bottom of the substrate 10 placed in the slot S space to uniformly supply the process gas to all substrates 10 in the processing space 101.

Meanwhile, referring to FIG. 9, a dispersion cap 440 may be interposed between the second gas distribution pipe 420 and the second gas supply pipe 430. The dispersion cap 440 may be disposed at the end of the second gas supply pipe 430. In order to better secure the dispersion cap 440, a step into which the dispersion cap 440 can be inserted may be further formed in the side wall through-hole 115 of the main body 110. The dispersion cap 440 may have a cylindrical shape with one side entirely closed so as to surround the end of the second gas supply pipe 430. Additionally, a plurality of distribution holes 445 may be formed on the outer peripheral surface to allow the process gas PG to pass between the second gas distribution pipe 420 and the second gas supply pipe 430.

As the dispersion cap 440 is provided with a dispersion hole 445 having a diameter smaller than the diameter of the second gas supply pipe 430, the gas transmitted from the second gas connection pipe 410 to the second gas distribution pipe 420 The process gas (PG) is not directly delivered to the nearby second gas supply pipe 430. That is, after the process gas (PG) is spread throughout the entire inside of the second gas distribution pipe 420, it may be delivered to each second gas supply pipe 430 through the distribution hole 445. Accordingly, there is an advantage that the process gas PG can be uniformly delivered to the plurality of second gas supply pipes 430.

Referring to Figures 10 (a) and (b), the second gas supply pipe 430 (process gas supply pipe 430) may have a plurality of discharge holes 432 formed on the outer circumference of the pipe 431. The discharge hole 432 may be formed at least in a position corresponding to the substrate 10 disposed in the processing space 101. The discharge hole 432 may be formed on the outer periphery of the second gas supply pipe 430 located within the processing space 101. For example, in order to avoid direct injection on the surface of the substrate 10, a plurality of discharge holes 432 may be formed along the outer left and right sides of the second gas supply pipe 430, that is, in the horizontal direction. Then, the process gas can be supplied in a direction parallel to the substrate 10. Or, as another example, the plurality of discharge holes 432 are formed in either the upper or lower portion of the second gas supply pipe 430 to allow process gas to pass through at least one of the upper and lower directions of the substrate 10. (PG) can also be supplied. Accordingly, the process gas PG can be supplied to the space between the substrate 10 and the adjacent substrate 10 or the space between the slots S, and the substrate 10 disposed in the slot S ) can be uniformly supplied to both sides of the process gas (PG).

Meanwhile, referring to (c) and (d) of FIGS. 10, the second gas supply pipe 430' (process gas supply pipe 430') according to another embodiment includes the first pipe 431 and the second pipe ( 435) and may be configured in the form of a double pipe. The second pipe 435 may have a smaller diameter than the first pipe 431 and may be disposed within the first pipe 431. The first pipe 431 may have a plurality of first discharge holes 432 formed on its outer circumference, and the second pipe 435 may have a plurality of second discharge holes 435 formed on its outer circumference. At this time, the first discharge hole 432 and the second discharge hole 436 are preferably formed to be offset, but are not limited thereto.

The process gas (PG) delivered from the second gas distribution pipe 420 into the second pipe 435 may spread throughout the interior space of the second pipe 435. Additionally, the process gas PG may pass through the second discharge hole 436 and spread throughout the interior of the first pipe 431. Since the first discharge hole 431 and the second discharge hole 436 are formed to be offset, the process gas (PG) is transferred from the second pipe 435 to the first pipe 431 through the second discharge hole 436. is not immediately sprayed to the outside, but is reflected from the inner wall of the first pipe 431 and can be sprayed through the first discharge hole 431 after uniformly filling the first pipe 431. Accordingly, there is an advantage that the process gas PG can be sprayed more uniformly throughout the second gas supply pipe 430'.

Referring again to FIG. 5, the gas discharge unit 500 is connected to the lower part of the main body 110 to discharge the airflow gas (CG) and process gas (PG) of the processing space 101 through a process gas discharge means such as an external pump. 70). An exhaust port 501 may be formed on one side wall (eg, lower wall) of the main body 110. The gas outlet 500 may be connected to the exhaust port 501. The exhaust port 501 may be formed to communicate with at least a portion of the main body 110 in the space between the side wall of the main body 110 and the partition walls 150 and 170. As an example, the exhaust port 501 may be formed in the lower part of the main body 110 in the space between the lower side wall of the main body 110 and the side partition wall 170. That is, the exhaust port 501 may be formed in the lower part of the side airflow region SR. Additionally, an exhaust port 501 may be formed near the lower part of the side walls, such as the left wall and the right wall, of the main body 110. At this time, it is preferable that the exhaust port 501 is formed at least in a lower position than the process gas supply unit 400. The gas discharge unit 500 may communicate with the main body 110 through the exhaust port 501 at the bottom of the main body 110. The number and location of the exhaust ports 501 and gas discharge portions 500 may vary depending on the size of the main body 110 and the size and number of substrates 10.

The gas discharge unit 500 needs to apply strong suction pressure to the internal space of the main body 110, that is, the upper airflow region (TR) and the side airflow region (SR). Accordingly, the airflow gas supplied from the first gas supply unit 300 may form a strong airflow in the upper airflow region TR and the side airflow region SR. The strong airflow in the upper airflow region (TR) and the side airflow region (SR) may pull gases to the inner surfaces of the partition walls 150 and 170, that is, around the substrate 10, thereby enabling rapid exhaustion. In addition, even volatile substances may be discharged to the gas discharge unit 500 through the side airflow region (SR) according to the airflow. In addition, since the upper airflow region (TR) and the side airflow region (SR) correspond to a negative pressure than the processing space 101, particles in the upper airflow region (TR) and the side airflow region (SR) are inside the processing space 101. It can be prevented from entering.

Figure 11 is a schematic diagram showing a gas flow in a cooling process according to an embodiment of the present invention.

As an example, assuming that the substrate processing apparatus of the present invention processes the flexible substrate 10 used in a flexible display device, it is as follows.

In general, the manufacturing process of a flexible substrate can be divided into a process of forming a flexible substrate on a non-flexible substrate, a process of forming a pattern on a flexible substrate, and a process of separating the flexible substrate from the non-flexible substrate.

Flexible substrates are made by forming a film made of polyimide on a non-flexible substrate such as glass or plastic, hardening it by heat treatment, and then injecting a solvent into the material that bonds the non-flexible substrate to the flexible substrate to weaken the adhesive force. It can be completed by separating the flexible substrate from the non-flexible substrate by disassembling the adhesive material.

At this time, the injected solvent component or the solvent component contained in the flexible substrate during the formation process of the flexible substrate may be volatilized and discharged to the outside of the main body 110 through the gas discharge unit 500. (110) Due to the difference in internal temperature and pressure, the temperature of the inner wall of the main body 110 may be low enough to condense the above substances in a certain portion of the inner wall of the main body 110. Ultimately, solvent components condensed on the inner wall of the main body 110 may contaminate the main body 110 or contaminate the substrate 10 in subsequent processes. Accordingly, the substrate processing apparatus of the present invention has an insulation plate 120 that maintains the temperature of the inner wall of the main body 110 so that all gases in the main body 110, including the solvent, are discharged to the outside in a gaseous state without being condensed on the inner wall of the main body 110. It is characterized by maintaining the gas to the extent that it does not condense. The heat generated by the heater unit 200 and the heat contained in the insulation plate 120 can maintain the temperature of the inner wall of the main body 110 at a temperature at which the materials can vaporize.

As an example, the material contained on the substrate 10 may be a volatile material such as a solvent that vaporizes at 50°C to 250°C. This material may preferably be NMP (n-methyl-2-pyrrolidone), or may be a volatile material such as IPA, acetone, or PGMEA (Propylene Glycol Monomethyl Ether Acetate).

Meanwhile, when performing heat treatment on the substrate 10, especially a large-area substrate 10, the temperature must be controlled to minimize the in-plane temperature deviation of the substrate 10. Existing equipment typically supplies and discharges gas from opposite sides of the chamber, forming an airflow from left to right for each slot. However, there was a problem in that the temperature between the left and right sides was different due to heat transfer, or that the upper part of the chamber cooled relatively more slowly than the lower part during cooling, resulting in a temperature deviation.

In Figure 2, the flow of process gas (PG) during the substrate processing process is shown by arrows. Referring to FIG. 2, in the present invention, a second gas supply pipe 430 (process gas supply pipe 430) is disposed in the processing space 101, and a plurality of discharge holes 432 formed in the second gas supply pipe 430 Since the process gas (PG) is supplied from , the process gas (PG) can be uniformly supplied to the entire surface of the substrate 10. In addition, since the process gas PG can escape from the center to the left and right within each slot S, the temperature difference within the substrate surface can be minimized even in the large-area substrate 10. In addition, unlike the existing structure in which the process gas (PG) flows into one side of the processing space and is exhausted from the other side of the processing space, the process gas (PG) flows in through both ends of each slot (S) (or both ends of the second gas supply pipe 430). The process gas PG flowing into the slot S is sprayed onto the entire surface of the substrate through the discharge holes 432 in the processing space 101, thereby minimizing the temperature difference within the surface of the substrate. In addition, a strong flow of air in the side airflow region SR in a downward direction toward the gas discharge unit 500 can allow the process gas (PG) in the processing space to be quickly exhausted to the side portion (airflow space). .

In Figure 11, the flow of air gas (CG) during cooling is shown by arrows. Referring to FIG. 11, the present invention provides a strong airflow from the first gas supply unit 300 (airflow gas supply unit 300) from the upper direction to the lower direction along the upper airflow region (TR) and the side airflow region (SR). can form a flow. Accordingly, the heat from the upper part of the processing space 101, which has a relatively high temperature, can be moved to the lower part, thereby minimizing the temperature difference between the upper and lower parts of the processing space 101. In addition, the shock to the substrate 10 can be minimized by allowing the gas to flow into the upper airflow region (TR) and the side airflow region (SR) rather than spraying the gas directly on the substrate 10 during cooling. In addition, the strong airflow in the upper airflow region (TR) and the side airflow region (SR) attracts and exhausts gases in the processing space 101, which has the advantage of enabling rapid cooling.

Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and may be modified in various ways by those skilled in the art without departing from the spirit of the invention. Transformation and change are possible. Such modifications and variations should be considered to fall within the scope of the present invention and the appended claims.

10: substrate
100: substrate processing device
101: Processing space
110: body
120: insulation plate
150, 160, 170: Bulkhead
190: substrate support
195: support bar
200: heater
210: heater unit
300: first gas supply unit
400: Second gas supply unit
500: gas outlet
501: exhaust port
CG: first gas
PG: secondary gas
S: slot
SR: collateral airflow area
TR: Upper airflow area

Claims (17)

a body providing an internal space and having an exhaust port;
a partition disposed in the internal space at a predetermined distance from a side wall of the main body to form a processing space in which a plurality of substrates are processed;
a process gas supply unit at least partially disposed within the processing space through a side wall of the main body and the partition wall and including a plurality of process gas supply pipes that inject process gas into the processing space;
a substrate supporter disposed so as not to interfere with the process gas supply pipe and supporting the plurality of substrates to be spaced apart from each other along a vertical direction;
a heater unit for heating the substrate supported on the substrate support unit;
Including,
The exhaust port communicates with the space between the side wall of the main body and the partition,
A substrate processing apparatus wherein when a plurality of substrates are arranged to be spaced apart from each other along a vertical direction in the processing space, the process gas supply pipe is located at least on an upper part of the substrate. According to paragraph 1,
The bulkhead is,
an upper partition disposed at a predetermined distance apart from the upper wall of the main body;
Side bulkheads arranged at a predetermined distance apart from the left wall, right wall, and rear wall of the main body
A substrate processing device comprising: According to paragraph 1,
The process gas supply unit,
A process gas connector that supplies process gas from the outside;
a plurality of process gas supply pipes passing through the main body and the partition wall and arranged at predetermined intervals;
A substrate processing apparatus comprising a process gas distribution pipe, one side of which is connected to the process gas connection pipe and the other side of which is connected to the plurality of process gas supply pipes. According to paragraph 3,
The process gas connection pipe and the process gas distribution pipe are respectively installed on both walls of the main body to supply process gas to the process gas supply pipe. According to paragraph 1,
The process gas supply pipe is a substrate processing device in which a plurality of discharge holes are formed at least in positions corresponding to substrates placed in the processing space. According to paragraph 2,
The substrate processing apparatus further includes an airflow gas supply unit connected to the top of the main body, or to the top and sides of the main body, and spraying an airflow gas. According to paragraph 1,
The process gas supply pipe is,
A first pipe having a plurality of first discharge holes formed along the longitudinal direction on the outer circumference; and
a second pipe having a smaller diameter than the first pipe, disposed within the first pipe, and having a plurality of second discharge holes formed on the outer circumference;
A substrate processing device comprising: In clause 7,
A substrate processing apparatus, wherein the first discharge hole and the second discharge hole are formed to be offset. According to paragraph 3,
A substrate processing apparatus in which a dispersion cap having a plurality of dispersion holes is disposed on an outer peripheral surface of an end of the process gas supply pipe. According to paragraph 1,
The exhaust port is formed on a lower side wall of the main body or a lower part of the side wall in a space between the side wall of the main body and the partition wall. According to clause 10,
The exhaust port is formed at a lower position than the process gas supply unit. According to paragraph 1,
A substrate processing apparatus in which an insulating plate is installed in close contact with an inner wall surface of the main body facing the partition wall. According to paragraph 1,
A plurality of holes through which the process gas supply pipe passes are formed in the partition wall, and the diameter of the holes is the same as or larger than the diameter of the process gas supply pipe. According to paragraph 1,
A plurality of support bars are installed to penetrate the side wall of the main body and the partition wall,
A substrate processing apparatus, wherein one or more substrate supports are supported on a pair of support bars facing each other at the front and rear of the processing space. According to clause 14,
Some of the heater units installed to penetrate the side walls of the main body and the partition are used as the support bars,
A substrate processing apparatus, wherein one or more of the substrate supports are supported on a pair of heater units facing each other at the front and rear of the processing space. According to clause 15,
The support bar has a hollow interior, and the heater unit is inserted into the support bar. According to paragraph 1,
The heater unit includes a plurality of heater units installed to penetrate the side wall of the main body and the partition wall,
The heater unit and the process gas supply pipe are disposed on the same horizontal plane.

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