KR20110061284A - Source gas supplying unit and deposition device having the same - Google Patents

Abstract

PURPOSE: A source gas supply unit and a depositing device including the same are provided to improve the uniformity of an inner temperature in a canister by reducing the temperature difference between the edge and the center of the canister. CONSTITUTION: A canister(110) accepts a source(S). A carrier gas supply unit(130) supplies carrier gas and including a carrier gas storage(131). A mixed gas discharge unit(150) discharges the mixed gas of the evaporated source gas and the carrier gas to the outside. The mixed gas discharge unit includes a mixed gas discharge line(151) and a discharge valve(153) which controls the movement of the discharged mixed gas.

Description

Source gas supply unit and deposition apparatus having the same {Source gas supplying unit and deposition device having the same}

The present invention relates to a source gas supply unit and a deposition apparatus having the same, and to a source gas supply unit capable of supplying a constant source gas and a deposition apparatus capable of depositing a uniform film having the same.

As a display device, a thin and light flat panel display device is widely used, and a flat panel display device includes a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display device (OLED, Organic). Light Emitting Diode).

In the flat panel display, a plurality of conductive films, organic films, insulating films, and the like are stacked on a substrate to form a thin film transistor for controlling the light emitting device and the light emitting device.

As a general method for forming a thin film on a substrate, physical vapor deposition (PVD) methods such as evaporation, ion plating, and sputtering, and chemical vapor deposition by gas reaction (CVD) Law).

The thin film formation by the conventional chemical vapor deposition method heats the canister in which the source gas for forming the thin film is formed, and together with the carrier gas is introduced into the canister, a mixed gas in which the carrier gas and the source gas vaporized is mixed into the deposition chamber. By supplying, the source is deposited on a substrate located inside the deposition chamber.

At this time, since the heating part for heating the canister is located outside the canister, a temperature gradient inside the canister occurs.

That is, the temperature of the edge region of the canister positioned close to the heating portion is higher than the temperature of the center region of the canister, so that the temperature inside the canister becomes uneven, and thus the amount of the source flowing into the deposition chamber becomes uneven. There is this.

An embodiment of the present invention provides a source gas supply unit for supplying a constant source gas to a deposition chamber.

In addition, an embodiment of the present invention provides a deposition apparatus capable of depositing a uniform film having the source gas supply unit.

According to an exemplary embodiment of the present invention, the source gas supply unit may include a canister in which a source is stored, a carrier gas supply unit supplying a carrier gas to the canister, and a mixed gas in which the source gas and the carrier gas are mixed. It includes a mixed gas discharge to discharge, characterized in that the ratio of the width and height of the canister is 1.0 ~ 3.0.

In addition, the deposition apparatus includes a source gas supply unit for supplying a mixed gas in which a source gas stored in a canister and a carrier gas provided from a carrier gas supply unit are mixed through a mixed gas discharge unit, and a deposition chamber that receives the mixed gas and performs a deposition process. It includes, characterized in that the ratio of the width and height of the canister is 1.0 ~ 3.0.

According to the configuration of the present invention as described above, since the temperature difference in the edge region and the center region of the canister can be reduced, the uniformity of the canister internal temperature can be improved.

Therefore, since the amount of the source flowing into the deposition chamber is uniform, a uniformly deposited film can be formed.

Hereinafter, a source gas supply unit and a deposition apparatus including the same according to an embodiment of the present invention will be described with reference to the drawings showing preferred embodiments, and the present invention is not limited to the field of a flat panel display device. It will be appreciated that it can be widely used in the field.

1 is a schematic diagram illustrating a source gas supply unit according to an exemplary embodiment of the present invention, and FIG. 2 is a schematic diagram illustrating a deposition apparatus according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the source gas supply unit 100 is for gasifying the source S and supplying it to the outside, the canister 110 in which the source S is stored, and a carrier gas supply unit supplying a carrier gas ( 130 and the mixed gas discharge unit 150 for discharging the mixed gas of the source gas and the carrier gas vaporized to the outside.

The canister 110 is provided with a heating unit 111 for heating the source (S) stored therein on the outer wall, the heating unit 111 may be provided integrally with the canister 110, detachable. It may be provided to be possible, in the present embodiment shows that the heating unit 111 is provided integrally with the canister (110).

In addition, the heating unit 111 may be installed on the front surface of the canister 110, and may be selectively installed only in a partial region such as a lower surface or a side surface. The heating unit 111 may be a lamp heater or a coil heater.

Therefore, when heat is supplied by the heating unit 111, the source S stored in the canister 110 may be gasified by the supplied heat, and the source S is a material for forming a film through deposition. As a liquid.

At this time, the canister 110 may have a hollow cylinder shape or hollow hexahedral shape, the ratio of the width (W) and height (H) is formed to be 1.0 to 3.0, preferably to 1.0 to 2.3 Is formed, this will be described later with reference to Table 1.

The carrier gas supply unit 130 is installed in the carrier gas storage unit 131, the carrier gas storage unit 131, and the canister 110 to store and supply the carrier gas so that the carrier gas is moved into the canister 110. Is installed in the carrier gas supply line 133, the carrier gas supply line 133 to form a mass flow meter (MFC) 135 and the mass flow meter 135 for supplying a constant amount of carrier gas Is installed at the rear end of the, and includes a supply valve 137 for controlling the movement of the carrier gas supplied via the mass flow meter 135.

The mixed gas discharge unit 150 mixes a path in which the mixed gas of the source gas vaporized from the source S stored in the canister 110 and the carrier gas provided by the carrier gas supply unit 130 is moved to the outside. It is installed in the gas discharge line 151 and the mixed gas discharge line 151, and includes a discharge valve 153 for controlling the movement of the mixed gas discharged.

Width (mm) Height (mm) Width to height ratio Temperature difference (℃) Comparative Example 1 55 150 0.4 23 Example 1 150 150 1.0 17 Example 2 200 150 1.3 14 Example 3 250 150 1.7 11 Example 4 300 150 2.0 8 Example 5 350 150 2.3 5 Example 6 400 150 2.7 4 Example 7 450 150 3.0 3 Comparative Example 2 500 150 3.3 3 Comparative Example 3 550 150 3.7 3

Table 1 shows the temperature difference between the edge region and the center region of the canister according to the ratio of the width and the height, without changing the height of the canister.

Referring to Comparative Example 1, the canister used in the related art had a width-to-height ratio of 0.4 and a temperature difference of 23 ° C between the edge region and the center region of the canister.

Meanwhile, referring to Examples 1 to 7, it can be seen that as the ratio of the width and height of the canister gradually increases, the temperature difference between the edge region and the center region of the canister decreases to a width of 1 ° C, 3 ° C, or 5 ° C. have.

However, referring to Comparative Example 2 and Comparative Example 3, it can be seen that when the ratio of the width and the height of the canister is 3.3 and 3.7, the temperature difference between the edge region and the center region of the canister does not decrease.

Looking at the operation of the source gas supply unit 100 according to an embodiment of the present invention as described above,

When the deposition process is started, the source S is vaporized by heating the canister 110 using the heating unit 111.

In addition, the carrier gas is supplied from the carrier gas storage unit 131 and flows into the canister 110.

At this time, the mass flow meter 135 adjusts the amount of the carrier gas so that the carrier gas is constantly supplied, and the supply valve 137 is in an open state.

The mixed gas in which the carrier gas and the vaporized source gas introduced into the canister 110 are mixed is moved along the discharge line 151 and discharged to the outside. At this time, the discharge valve 153 is in an open state.

Referring to FIG. 2, the deposition apparatus 500 includes a source gas supply unit 100 that discharges a mixed gas in which a carrier gas and a source gas are mixed, and a deposition chamber 200 that receives a mixed gas and performs a deposition process. do.

Since the source gas supply unit 100 is the same as the source gas supply unit 100 described with reference to FIG. 1, a detailed description thereof will be omitted.

The deposition chamber 200 includes a chamber body 210, a susceptor 230, and a shower head 250.

The chamber body 210 provides a space in which the deposition process is performed, and may have a cylindrical or box shape, but is not limited thereto.

An outlet 211 is formed in the chamber body 210 for discharging the residual gas according to the deposition process. In this embodiment, the outlet 211 is shown below the chamber body 210. It is not.

In addition, one side of the chamber body 210 is provided with an entrance (not shown) for inputting and discharging the substrate (G).

The susceptor 230 is positioned below the inside of the chamber body 210, and the substrate G, which is introduced into the chamber body 210, is seated and supports the substrate G during the process.

The shower head 250 is connected to the source gas supply unit 100, in particular, the mixed gas discharge line 151, and receives the mixed gas through the mixed gas discharge line 151 so that the material constituting the source is the substrate G. Spray to ensure even deposition on.

Looking at the operation of the deposition apparatus 500 according to an embodiment of the present invention as described above,

When the process for deposition is started, the source S is vaporized by heating the canister 110 using the heating unit 111.

In addition, the carrier gas is supplied from the carrier gas storage unit 131 and flows into the canister 110. At this time, the mass flow meter 135 adjusts the amount of the carrier gas so that the carrier gas is constantly supplied.

The mixed gas mixed with the carrier gas and the vaporized source gas introduced into the canister 110 is moved along the discharge line 151 and supplied to the shower head 250 of the deposition apparatus 200.

The shower head 250 receives the mixed gas and sprays the material forming the source evenly on the substrate G seated on the susceptor.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and it will be understood by those skilled in the art that various changes and equivalent other embodiments are possible. Therefore, the technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

1 is a schematic diagram illustrating a source gas supply unit according to an exemplary embodiment of the present invention.

2 is a schematic diagram illustrating a deposition apparatus according to an embodiment of the present invention.

[Description of Major Symbols in Drawing]

100: source gas supply unit 110: canister

111 heating unit 130 carrier gas supply unit

131: carrier gas storage unit 133: carrier gas supply line

135 mass flow meter 137 supply valve

150: mixed gas discharge unit 151: mixed gas discharge line

153: discharge valve 200: deposition chamber

210: chamber body 211: outlet

230: susceptor 250: shower head

Claims (12)

A canister in which the source is stored; A carrier gas supply unit supplying a carrier gas to the canister; And A mixed gas discharge unit configured to discharge the mixed gas in which the source gas is vaporized and the carrier gas to the outside, Source gas supply unit, characterized in that the ratio of the width and height of the canister is 1.0 ~ 3.0. The method of claim 1, Source gas supply unit, characterized in that the ratio of the width and height of the canister is 1.0 ~ 2.3. The method of claim 1, And the canister comprises a heating unit. The method of claim 1, The carrier gas supply unit may include a carrier gas storage unit configured to store and supply the carrier gas; A carrier gas supply line installed between the carrier gas storage unit and the canister; A mass flow meter installed in the carrier gas supply line; And And a supply valve installed at a rear end of the mass flow meter. The method of claim 1, The mixed gas discharge unit comprises a mixed gas discharge line to which the mixed gas is moved; And And a discharge valve installed in the mixed gas discharge line. The method of claim 3, wherein The heating unit is a source gas supply unit, characterized in that the lamp heater or coil heater. A source gas supply unit for supplying a mixed gas mixed with a source gas stored in the canister and a carrier gas provided from the carrier gas supply part through the mixed gas discharge part; And A deposition chamber configured to receive the mixed gas and perform a deposition process; Deposition apparatus, characterized in that the ratio of the width and height of the canister is 1.0 ~ 3.0. The method of claim 7, wherein Deposition apparatus, characterized in that the ratio of the width and height of the canister is 1.0 ~ 2.3. The method of claim 7, wherein And the canister includes a heating unit. The method of claim 7, wherein The carrier gas supply unit may include a carrier gas storage unit configured to store and supply the carrier gas; A carrier gas supply line installed between the carrier gas storage unit and the canister; A mass flow meter installed in the carrier gas supply line; And And a supply valve installed at a rear end of the mass flow meter. The method of claim 7, wherein The mixed gas discharge unit comprises a mixed gas discharge line to which the mixed gas is moved; And And a discharge valve installed in the mixed gas discharge line. The method of claim 9, And the heating unit is a lamp heater or a coil heater.

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