CN114686852A

CN114686852A - Coating system, feeding device and method

Info

Publication number: CN114686852A
Application number: CN202011575636.0A
Authority: CN
Inventors: 宗坚; 文毅
Original assignee: Jiangsu Favored Nanotechnology Co Ltd
Current assignee: Jiangsu Favored Nanotechnology Co Ltd
Priority date: 2020-12-28
Filing date: 2020-12-28
Publication date: 2022-07-01

Abstract

The invention discloses a coating system, a feeding device and a coating method, wherein the coating system comprises: the deposition reaction device is used for coating in a plasma chemical vapor deposition mode; a working carrier gas heating device for heating the working carrier gas; and the raw material providing device is used for converting reaction raw materials into gas, wherein in the working process, the working carrier gas is introduced into the working carrier gas heating device and heated to a preset temperature, the reaction raw materials are sent into the raw material providing device and converted into gas, the heated working carrier gas and the reaction raw material gas are sent into the deposition reaction device, and a film layer is formed in the deposition reaction device in a plasma enhanced chemical deposition mode.

Description

Coating system, feeding device and method

Technical Field

The invention relates to the field of film coating, in particular to a film coating system, feeding equipment and a method thereof.

Background

The film coating technology is an effective means for improving the surface performance of materials, and the film coating technology enhances the properties of the surface of a workpiece to be coated, such as strength, scratch resistance, wear resistance, heat dissipation, waterproofness, corrosion resistance, low friction and the like, by adopting a mode of forming a film layer on the surface of the workpiece to be coated.

The currently adopted coating technologies mainly include an evaporation coating technology and a sputtering coating technology, wherein the evaporation coating technology is to change raw materials into gas phase by using a heating evaporation method in a high vacuum environment and then condense the gas phase on the surface of a workpiece to be coated.

The sputtering coating technology is a method for bombarding a target with ion beams with certain energy to make target molecules separate from the surface of the target and transport the target molecules to a substrate for film formation. However, the general sputtering equipment uses the block graphite target as a carbon source, has the problems of low ionization rate, low deposition efficiency and the like, and not only is the quality of the prepared film poor, but also the cost is obviously high. That is, the existing coating systems produced by evaporation coating technology or sputtering coating technology have many problems.

The Plasma Enhanced Chemical Vapor Deposition (PECVD) coating technology has the characteristics of low deposition temperature, high deposition rate and the like, and is another common technical means for preparing the coating. The plasma enhanced chemical vapor deposition coating technology utilizes high-energy electrons in plasma to activate gas molecules, promotes free excitation and ionization, generates a large amount of active particles such as high-energy particles with strong chemical activity, atomic or molecular ions, electrons and the like, and the active particles react chemically to generate reaction products. Since the energetic electrons provide energy to the source material particles, chemical vapor deposition can occur without the need to provide much external thermal energy, thereby reducing the reaction temperature, which makes possible chemical reactions that are otherwise difficult or very slow.

In the process of coating by using the conventional PECVD coating device, two main gases are introduced, wherein one is an auxiliary gas, such as an inert gas, the main function of the auxiliary gas is to activate a reaction gas, and the other is a reaction gas, the main function of the reaction gas is to form a film layer.

Firstly, in the existing PECVD coating device, the auxiliary gas and the reaction gas are respectively and independently introduced into the reaction chamber during reaction, and the distribution difference of the two gases is large by a dispersed introduction mode. That is, the auxiliary gas and the reaction gas are respectively concentrated at the introduced positions, and the state of mixing with each other is poor, thereby making the activation of the auxiliary gas to the reaction gas poor.

Secondly, the auxiliary gas and the reaction raw materials are respectively introduced into the reaction chamber through different inlets, which is not beneficial to the mixing of reactants, and makes the film layers at different coating positions have differences, namely, the performance of the film layers is inconsistent at different positions.

On the other hand, the auxiliary gas is pressurized and introduced into the reaction chamber at normal temperature, the gas expands to enter the reaction chamber, the self temperature of the gas which releases heat outwards is further reduced, the reaction gas is obtained by heating and evaporating the liquid raw material, and the temperature is higher, so that obvious temperature difference exists between the auxiliary gas and the internal reaction chamber, the rapid and smooth proceeding of the reaction process in the reaction chamber is not facilitated, and sometimes even abnormal reaction is caused.

It is also worth mentioning that with the gradual introduction and mass production of products with large thickness (1um and above), the attention of users to the overall uniformity of the coating gradually rises, but in the existing coating mode, the auxiliary gas and the reaction gas are respectively introduced into the reaction chamber, so that the problem of large difference of the uniformity inside and outside the coating is more prominent, that is, the performance of the inner side close to the surface of the coated product and the outer side close to the external environment are different, and the overall performance and the service life of the coating are affected.

The feeding quantity of the conventional PECVD coating system is difficult to accurately quantify, characterize and control, so that the fine automation development is hindered, and the summarization and optimization of quantification experience are also limited.

The existing PECVD coating reaction raw material feeding system has limited heating and gasifying efficiency, is not favorable for rapid gasification and mixing to promote the requirement of large-thickness efficient coating, and has the defects of high temperature difference of partial areas due to overhigh local node temperature, easy monomer agglomeration and blockage caused by high temperature difference and accelerated aging failure of sealing elements (sealing rings).

Disclosure of Invention

One advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, in which a working carrier gas and a reaction raw material gas in the coating system are mixed and then fed into a reaction chamber, so that the working carrier gas and the reaction raw material gas are mixed more uniformly.

An advantage of the present invention is to provide a coating system, a material supplying apparatus and a method thereof, in which a working carrier gas in the coating system is heated to a predetermined temperature and then supplied into a reaction chamber to reduce a reaction temperature difference between the working carrier gas and the reaction chamber, so that a reaction process is smoothly performed.

An advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, wherein a working carrier gas and a reaction raw material gas in the coating system enter a reaction chamber through a same inlet, so that the working carrier gas and the reaction raw material gas at different positions in the reaction chamber are uniformly mixed.

One advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, wherein the working carrier gas in the coating system can better excite the vapor deposition film forming process of the reaction raw material gas, so that the performance of the film layer is more balanced.

An advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, in which a working carrier gas in the coating system is heated in a step-by-step manner to increase the temperature of the working carrier gas, so that the temperature distribution of the working carrier gas is more uniform.

An advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, wherein in one embodiment, the working carrier gas and the reaction raw material gas in the coating system are delivered in a matched manner inside and outside and are mixed inside and outside before entering the reaction chamber.

An advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, wherein in one embodiment, working carrier gas and reaction raw material gas in the coating system are delivered in a parallel manner and mixed inside and outside before entering a reaction chamber.

An advantage of the present invention is to provide a coating system, a feeding apparatus and a method thereof, wherein in one embodiment, the coating system is provided with a heat-insulating pipe to deepen the mixing degree and reduce the space occupation.

An advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, wherein in one embodiment, a node-line matching manner is designed in the coating system to improve mixing efficiency and mixing degree, so as to improve uniformity of a coating layer.

An advantage of the present invention is to provide a coating system, a material supply apparatus and a method thereof, wherein the coating system improves the accuracy of gas control by a node-line cooperative transportation control manner in one embodiment.

To achieve at least one of the above advantages, one aspect of the present invention provides a coating system, comprising:

the deposition reaction device is used for coating a film in a plasma enhanced chemical vapor deposition mode;

a working carrier gas heating device for heating the working carrier gas; and

the raw material providing device is used for converting reaction raw materials into gas, wherein in the working process, the working carrier gas is introduced into the working carrier gas heating device and heated to a preset temperature, the reaction raw materials are sent into the raw material providing device and converted into gas, the heated working carrier gas and the heated reaction raw material gas are sent into the deposition reaction device, and a film layer is formed on the surface of a workpiece to be coated in the deposition reaction device in a plasma enhanced chemical vapor deposition mode.

The coating system according to one embodiment, wherein the working carrier gas is selected from the group consisting of: inert gas, nitrogen and fluorocarbon gas.

The plating system according to one embodiment, wherein the heating temperature of the working carrier gas heating device coincides with the reaction temperature of the deposition reaction device.

The coating system according to one embodiment further comprises a mixing device, the work carrier gas heating device is communicated with the mixing device, the raw material supply device is communicated with the mixing device, the mixing device is communicated with the deposition reaction device, and in the working process, the work carrier gas and the reaction raw material gas are mixed in the mixing device and then enter the deposition reaction device.

The coating system according to an embodiment further comprises a buffer pressure stabilizing device, wherein the buffer pressure stabilizing device is used for stabilizing and buffering the mixed gas.

The coating system according to one embodiment, wherein the buffer pressure stabilizing device comprises a pressure stabilizing tank and a heat preservation component, and the heat preservation component is used for preserving heat of the pressure stabilizing tank.

The coating system according to one embodiment, wherein the coating system comprises a plurality of surge tanks, each of which is in controllable communication with the deposition reaction apparatus.

The coating system according to one embodiment, wherein the buffer pressure stabilizer comprises a pressure regulator, and the pressure regulator is selectively arranged among the mixing device, the buffer pressure stabilizer and/or the deposition reaction device.

The coating system according to one embodiment further comprises a heat preservation pipe, wherein the heat preservation pipe is selectively communicated between the mixing device, the buffer pressure stabilizing device and/or the deposition reaction device.

The coating system according to one embodiment further comprises a dispersing gas-feeding member disposed in the deposition reaction apparatus and controllably communicated with the buffer pressure-stabilizing apparatus.

According to one embodiment, the coating system comprises a plurality of dispersing air feeding pieces, and the dispersing air feeding pieces are respectively arranged at different height positions of a reaction cavity of the deposition reaction device.

The coating system according to one embodiment comprises a plurality of dispersing air feeding members, and the dispersing air feeding members are respectively and controllably communicated with the pressure stabilizing tanks.

The plating system according to one embodiment, wherein the working carrier gas heating device includes an intake control portion that controls a flow rate of the working carrier gas into the heating chamber, and a heating chamber that heats the working carrier gas.

The coating system according to an embodiment, wherein the heating chamber includes a device body having a preheating chamber and a heating chamber, the preheating chamber partially communicating with the heating chamber, and a heating element for heating the preheating chamber and/or the heating chamber.

The plating system according to one embodiment, wherein the work carrier gas heating means includes a main body, a cover and a sealing member, the cover being sealingly attached to the main body through the sealing member.

The plating system according to an embodiment, wherein the work carrier gas heating means includes a heat insulating seal disposed between the work carrier gas heating means and the mixing means.

The coating system according to one embodiment, wherein the heating chamber includes a device body including a first tap, the mixing device including a second port, the first tap extending into the second port.

The coating system according to one embodiment, wherein an insulating gap is formed between the first tap and the second port.

The coating system according to one embodiment, wherein the deposition reaction device comprises a reaction chamber body, the reaction chamber body is provided with a reaction chamber and a feeding hole, the feeding hole is communicated with the reaction chamber, and the working carrier gas heating device and the deposition reaction device are communicated with the feeding hole.

The coating system according to one embodiment, wherein the reaction chamber includes a reaction chamber having an opening and a control door controlling the opening and closing of the opening.

The coating system according to one embodiment, wherein the reaction chamber has an air pumping port, and the air pumping port is communicated with an air pumping part.

The coating system according to one embodiment, wherein the deposition reaction device comprises a support member, and the support member is arranged in the reaction chamber and used for placing the workpiece to be coated.

The coating system according to one embodiment, wherein the deposition reaction device comprises a discharge component for providing an electric field effect to the reaction chamber.

The coating system according to an embodiment, wherein the mixing device comprises a gas carrying pipe and a raw material pipe, and the gas carrying pipe and the raw material pipe are sleeved in and out.

The coating system according to one embodiment, wherein the mixing device includes a carrier gas pipe and a raw material pipe, the carrier gas pipe and the raw material pipe being arranged side by side.

Another aspect of the present invention provides a coating method, comprising the steps of:

(A) pumping out air in a reaction chamber of a deposition reaction device;

(B) heating working carrier gas, and introducing into the reaction cavity; and

(C) introducing reaction raw material gas, and forming a film layer on the surface of a workpiece to be coated in a plasma enhanced chemical vapor deposition mode.

According to one embodiment, the working carrier gas and the reaction raw material gas in the steps (B) and (C) are mixed and then introduced into the reaction chamber.

The plating method according to one embodiment, wherein the heating temperature of the working carrier gas coincides with the reaction temperature of the reaction raw material gas.

According to one embodiment, in the step (B), the working carrier gas is preheated, and then the working carrier gas is heated to a predetermined temperature.

Another aspect of the present invention provides a coating system, comprising:

a mixing device for mixing the working carrier gas and the reaction raw material gas; and

and the buffer pressure stabilizing device is used for stabilizing and buffering the mixed gas, wherein in the working process, the working carrier gas and the reaction raw gas are fed into the mixing device to be mixed, the mixed gas is conveyed to the buffer pressure stabilizing device, and the mixed gas is fed into the deposition reaction device after being stabilized and buffered by the buffer pressure stabilizing device.

The plating system of an embodiment, wherein the insulating member is a liquid thermal insulating member.

The coating system according to one embodiment, wherein the dispersion air-sending member is a tubular member having a plurality of openings in a wall thereof.

The coating system according to one embodiment, wherein the deposition reaction apparatus includes a reaction chamber and a support member disposed within the reaction chamber, the support member having a central passage, the dispersion gas feed being disposed in the central passage.

Another aspect of the present invention provides a method for supplying a coating system, comprising the steps of:

(A) mixing the working carrier gas and the reaction raw material gas;

(B) the mixed working carrier gas and the mixed reaction raw material gas are subjected to pressure stabilization and caching; and

(C) and conveying the mixed gas after the pressure stabilization buffer to a reaction cavity.

The method according to one embodiment, wherein in the step (B), the mixed gas is incubated.

The method according to one embodiment, wherein step (a) is followed by: and preserving heat and conveying the mixed working carrier gas and reaction raw material gas.

The method according to one embodiment, wherein the step (C) includes the steps of: and dispersing and releasing the mixed gas in the reaction cavity.

The method according to one embodiment, wherein prior to step (a) comprises: the working carrier gas is heated.

Drawings

Fig. 1A and 1B are overall schematic views of a plating system according to a first embodiment of the invention.

Fig. 2 is a schematic diagram of the operation of the coating system according to the above embodiment of the present invention.

FIG. 3 is a schematic view of a deposition reaction apparatus of the coating system according to the above embodiment of the present invention.

Fig. 4A and 4B are schematic perspective views of different angles of the working carrier gas heating device and the mixing device of the coating system according to the above embodiment of the present invention.

Fig. 5 is a schematic sectional view of the work carrier gas heating means and the mixing means of the plating system according to the above embodiment of the invention.

Fig. 6 is a partially enlarged view of a position B in fig. 5.

Fig. 7 is an exploded view of the working carrier gas heating means and the mixing means of the plating system according to the above embodiment of the invention.

Fig. 8A is a schematic view of a mixing device of a plating system according to a second embodiment of the invention.

Fig. 8B is a modified example of the mixing device of the plating system according to the second embodiment of the invention.

Fig. 9 is a schematic view of a mixing device of a plating system according to a third embodiment of the invention.

FIG. 10 is a schematic view of a coating system according to a fourth embodiment of the present invention.

FIG. 11 is a schematic view showing the operation of supplying gas to a coating system according to a fourth embodiment of the present invention.

Detailed Description

The following description is provided to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.

It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or components must be in a particular orientation, constructed and operated in a particular orientation, and thus the above terms are not to be construed as limiting the present invention.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

References to "one embodiment," "an embodiment," "example embodiment," "various embodiments," "some embodiments," etc., indicate that the embodiment described herein may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the feature, structure, or characteristic. In addition, some embodiments may have some, all, or none of the features described for other embodiments.

Referring to fig. 1A to 7, a coating system 1 according to an embodiment of the present invention is illustrated, the coating system 1 is used for coating a workpiece to be coated, that is, forming a film on an outer surface or a predetermined surface position of the workpiece to be coated.

The coating system 1 comprises a deposition reaction device 10, a working carrier gas heating device 20, a raw material supply device 30 and a mixing device 40, wherein the deposition reaction device 10 is used for placing a workpiece to be coated and coating the workpiece to be coated. The working carrier gas heating device 20 is used to heat the working carrier gas. The raw material supply device 30 is used for converting the reaction raw material into a gas, for example, but not limited to, heating and gasifying the reaction raw material to enter the deposition reaction device 10 for deposition reaction to form a film layer. The mixing device 40 is used to mix the working carrier gas and the reaction raw material gas.

The working carrier gas heating device, the raw material providing device and the mixing device form a feeding device, and the feeding device provides working carrier gas and reaction gas raw materials for deposition coating for the deposition reaction device.

The feedstock supply means is used to supply a gaseous feedstock, for example, but not limited to, heating a liquid feedstock to a gaseous feedstock.

In one embodiment of the present invention, the supply means may not include the raw material supply means, that is, when the reaction raw material is a gas, the gasification may not be performed.

Preferably, the deposition reaction device 10 coats the workpiece to be coated by plasma enhanced chemical vapor deposition.

In one embodiment, when the reaction raw material is gas, the raw material supply device heats the gas to raise the temperature.

The reaction raw material gas may be C_xH_yWherein x is an integer of 1 to 10 and y is an integer of 1 to 20. The reaction raw material gas may be a single gas or a mixed gas. Alternatively, the reaction raw material gas may be methane, ethane, propane, butane, ethylene, acetylene, propylene or propyne which is gaseous at normal pressure, or may be vapor formed by evaporation under reduced pressure or heating.

The reaction raw material can be selected from monofunctional unsaturated fluorocarbon compounds, polyfunctional unsaturated hydrocarbon derivatives or organic silicon compounds containing double bonds, Si-Cl, Si-O-C, Si-N-Si, Si-O-Si structures or cyclic structures.

Optionally, the reaction feedstock comprises a carbon-containing compound having reactive functional groups, further comprising a compound substantially represented by-CF₃Predominantly perfluorinated compounds, perfluoroolefins. Alternatively, the reaction feed may also include hydrogen-containing unsaturated compounds containing halogen atoms or perhalogenated organic compounds of at least 10 carbon atoms, organic compounds containing two double bonds, saturated organic compounds having an alkyl chain of at least 5 carbon atoms, optionally interrupted by a heteroatom, alkenes substituted with alkynes, polyethers or macrocycles containing at least one heteroatom.

The surface of the workpiece to be coated can be, but is not limited to, the surface to be coated made of glass, plastic, inorganic materials and organic materials. The workpiece to be coated can be an electronic product, an electric appliance part, an electronic assembly semi-finished product, a PCB (printed circuit board), a metal plate, a polytetrafluoroethylene plate or an electronic component, and the coated workpiece to be coated can be exposed to a water environment, a mould environment, an acid and alkaline solvent environment, an acid and alkaline salt mist environment, an acidic atmosphere environment, an organic solvent soaking environment, a cosmetic environment, a sweat environment, a cold and hot circulation impact environment or a damp and hot alternation environment.

When the workpiece to be coated is an electronic device, for example, but not limited to, a mobile phone, a tablet computer, an electronic reader, a wearable device, a display, and the like. After a film layer is formed on the surface of the workpiece to be coated, another film layer which is the same or different can be coated through the deposition reaction device 10. That is, a single layer, a double layer or a multi-layer film can be formed by the coating system 1.

Optionally, the film layer comprises one or more layers of films, thin films, or nanocoatings, etc. plated on the surface of the substrate. Optionally, the film or coating may be an inorganic film, an organic silicon nano-protection film layer, an organic silicon hard nano-protection film layer, a composite structure high insulation hard nano-protection film layer, a high insulation nano-protection film layer with a modulated structure, a plasma polymerization film layer, a gradient increasing structure liquid-proof film layer, a gradient decreasing structure liquid-proof film layer, a film layer with controllable crosslinking degree, a waterproof click-through resistant film layer, a low adhesion corrosion resistant film layer, a liquid-proof film layer with a multi-layer structure, a polyurethane nano-film layer, an acrylamide nano-film layer, an antistatic liquid-proof nano-film layer, an epoxy nano-film layer, a high transparent low color difference nano-film layer, a high adhesion aging resistant nano-film layer, a silicon-containing copolymer nano-film layer or a polyimide nano-film layer, a diamond-like film, and the like, which is not limited herein. Alternatively, the coating or film may be of the type AR (acrylic), ER (epoxy), SR (silicone), UR (polyurethane), XY (paraxylene), etc., according to the definition of IPC, and further, a paraxylene or parylene type coating may provide a better chemical, electrical or physical protective effect.

In this embodiment of the present invention, the liquid raw material is heated and vaporized by the raw material supply device 30 and then introduced into the mixing device 40, but in another embodiment of the present invention, the coating system 1 may not include the raw material supply device 30, that is, the gaseous raw material may be directly introduced into the mixing device 40, so that the gaseous reaction raw material gas is directly mixed with the working carrier gas. Of course, it is also possible to heat the reaction raw materials in a gaseous state to a predetermined temperature by the raw material supply device 30, thereby promoting the mixing of the working carrier gas and the reaction raw material gas with each other and the deposition reaction process in the deposition reaction device 10.

Preferably, the work carrier gas heating device 20 heats the work carrier gas to a deposition reaction temperature, that is, the heating temperature of the work carrier gas coincides with the deposition reaction temperature in the deposition reaction device 10, so as to facilitate the deposition reaction process.

The working carrier gas is used to activate the deposition reaction process of the reaction raw material gas, by way of example and not limitation, to excite the plasma process of the reaction raw material gas by increasing the density of the plasma. In some cases, such as when the working carrier gas is an inert gas, the working carrier gas does not form a film layer, but can provide excitation energy to the reaction raw material gas, causing the reaction raw material gas to form a plasma more quickly and more, thereby exciting a reaction process. The working carrier gas is exemplified by, but not limited to, an inert gas such as, but not limited to, helium or argon, nitrogen, a fluorocarbon gas such as, but not limited to, carbon tetrafluoride. The working carrier gas may be a single gas or a mixture of two or more gases.

The working carrier gas heating device 20 is communicated with the mixing device 40, the raw material supply device 30 is communicated with the mixing device 40, and the mixing device 40 is communicated with the deposition reaction device 10.

Referring to fig. 2, the process gas for forming a film layer in the coating system 1 flows through a process that the working carrier gas enters the working carrier gas heating device 20, is heated by the working carrier gas heating device 20 and then enters the mixing device 40, the reaction raw material enters the raw material providing device 30 to be gasified, the raw material is gasified and then enters the mixing device 40, and the heated working carrier gas and the gasified reaction raw material are mixed in the mixing device 40 and then enter the deposition reaction device 10.

It is worth mentioning that, in the conventional film plating apparatus, the working carrier gas is introduced into the reaction chamber at normal temperature, and is separately dispersed with the reaction raw material gas to enter the reaction chamber, so that the excitation effect of the working carrier gas on the reaction raw material gas is poor, the reaction rate and the deposition effect are affected, and the distribution of the working carrier gas and the reaction raw material gas is not uniform, so that the performance of the film layer is not balanced And the reaction raw material gas is uniformly distributed at different positions, so that the states of the reaction raw material gas at different positions when the reaction raw material gas is deposited to form the film layers are consistent, and the formed film layers are more uniformly distributed, namely, the performances at different positions are consistent.

Further, in this embodiment of the invention, the deposition reaction apparatus 10 and the mixing apparatus 40 are communicated with each other through a communicating passage, that is, the working carrier gas and the reaction raw material gas in the mixing apparatus 40 enter the reaction apparatus through the communicating passage. In other embodiments of the present invention, the deposition reaction apparatus 10 and the mixing apparatus 40 are communicated with each other through a plurality of the communication channels, that is, the working carrier gas and the reaction raw material gas in the mixing apparatus 40 are fed into the reaction apparatus through a plurality of channels, such as feeding the mixed gas of the working carrier gas and the reaction raw material gas into the reaction apparatus from different orientations, thereby rapidly and uniformly distributing the working carrier gas and the reaction raw material gas in the deposition reaction apparatus 10. The plurality of communicating channels are distributed in different orientations of the deposition reaction apparatus 10, such as up, down, left, right, front, and rear.

The deposition reaction apparatus 10 includes a reaction chamber 11, an air-extracting part 12 and a supporting part 13.

The reaction chamber 11 has a reaction chamber 100, wherein the reaction chamber 100 can be kept relatively airtight, so that the reaction chamber 100 can be kept at a desired degree of vacuum.

The mixing device is used for providing gas to the reaction chamber 100 of the reaction chamber 11.

The pumping part 12 is connected to the reaction chamber 11 so as to communicate with the reaction chamber 100. The pumping section 12 can control the pressure in the reaction chamber 100. The pressure in the reaction chamber 100 will affect the efficiency of the whole coating process and the performance of the formed film. During the coating process, the pressure of the whole reaction chamber 100 is continuously changed in one stage along with the introduction of the raw material gas and the generation of the plasma, and the pressure of the reaction chamber 100 can be kept in a desired stable state by adjusting the pumping power of the pumping part 12 and the gas supply power of the mixing device.

That is, the pressure in the reaction chamber 100 may be reduced not only by the air-extracting part 12 to extract air, but also increased in some processes by the mixing device to supply air. For example, after the coating process is finished, air or other gas may be supplied through the mixing device, so that the air pressure inside the reaction chamber 100 and the air pressure outside the reaction chamber 11 are equal, and the workpiece to be coated inside the reaction chamber 100 may be taken out. According to at least one embodiment of the present invention, the gas supply range of the mixing device supplies gas with a flow rate controlled to be 10sccm to 200 sccm. According to at least one embodiment of the present invention, the flow rate of the ion source gas of the mixing device is controlled to be 50sccm to 500 sccm.

The support member 13 is located in the reaction chamber 100 of the reaction chamber 11. The supporting member 13 can support the workpiece to be coated to hold the workpiece to be coated in the reaction chamber 100 of the reaction chamber 11. A plurality of the workpieces to be coated may be supported on the support member 13.

Further, the deposition reaction apparatus 10 includes a discharge part 14, wherein the discharge part 14 is capable of providing a radio frequency electric field and/or a pulsed electric field, under which a plasma source gas can be ionized to generate a plasma. Under the pulsed electric field, the plasma can move towards the workpiece to be coated so as to deposit on the surface of the workpiece to be coated.

The discharge section 14 is capable of providing alternating radio frequency electric fields and pulsed electric fields, as well as both radio frequency electric fields and pulsed electric fields.

Further, referring to fig. 1A, 1B and 3, the discharging component 14 includes a radio frequency power source 141, a pulse power source 142 and at least one electrode 143, wherein the radio frequency power source 141 can generate the radio frequency electric field after being powered on, the radio frequency power source 141 can be disposed outside the reaction chamber 11, the radio frequency power source 141 is conductively connected to one of the electrodes 143, and the electrode 143 is located in the reaction chamber 100. It is understood that the rf power source 141 may also generate the alternating magnetic field in an electrodeless manner to ionize the plasma source gas.

The pulse power source 142 may be disposed outside the reaction chamber 11, the pulse power source 142 is conductively connected to one of the electrodes 143, and the electrode 143 is located in the reaction chamber 100. The electrode 143 is disposed at one side of the workpiece to be coated as a cathode of the pulse power source 142 to accelerate positive ions in the plasma toward the workpiece to be coated. The electrode 143 may be disposed on the front side or the back side of the workpiece to be coated. The electrode 143 may also be disposed in the reaction chamber 11 as an anode of the pulse power source 142. The two electrodes 143 as the anode and the cathode of the pulse power source 142 may be disposed oppositely, for example, the two electrodes 143 are respectively disposed on the front side and the back side of the workpiece to be coated, or the two electrodes 143 are respectively disposed on the two opposite sides of the workpiece to be coated.

The rf power source 141 and the pulse power source 142 are each conductively connected to the electrode 143. That is, the rf power source 141 and the pulse power source 142 can be independently operated, i.e., can be operated simultaneously or sequentially by mistake.

The workpiece to be coated on the supporting member 13 can be coated under the action of the rf electric field and/or the pulsed electric field, which are explained in the following.

In detail, the rf power source 141 discharges the gas fed by the mixing device 40 so that the whole reaction chamber 100 is in a plasma environment and the reaction gas is in a high energy state. The pulse power supply 142 generates a strong electric field in the discharge process, and the strong electric field is located near the workpiece to be coated, so that active ions in the plasma environment are accelerated to be deposited on the surface of the workpiece to be coated under the action of the strong electric field.

Optionally, the film is a diamond-like carbon film (DLC film). When the surface of the workpiece to be coated needs coating, reaction gas is deposited on the surface of the workpiece to be coated under the action of a strong electric field to form an amorphous carbon network structure. When the pulse power supply does not discharge, the film layer deposited on the workpiece to be coated is utilized to carry out free relaxation of the amorphous carbon network structure, the carbon structure is converted to a stable phase-bent graphene sheet layer structure under the thermodynamic action, and the carbon structure is embedded in the amorphous carbon network to form a transparent graphene-like structure.

In more detail, in the present embodiment, the supporting member 13 includes a multi-layered bracket 131, wherein the multi-layered bracket 131 includes a plurality of supporting members, and the supporting members are spaced apart from each other and are stacked and held in the reaction chamber 100. The workpiece to be coated is placed on one or more layers of the multi-layer support 131.

The workpiece to be coated is placed on the electrode 143 connected to the pulse power source 142 as a cathode. After the plasma is generated by ionization under the action of the pulse electric field, positive ions in the plasma move towards the workpiece to be coated under the action of the pulse electric field so as to be deposited on the surface of the workpiece to be coated. The plasma includes an electrically conductive gaseous medium having both electrons and positive ions of its own.

It should be noted that, because the electrode 143 serving as a cathode is disposed around the workpiece to be coated, positive ions in the plasma can be accelerated to deposit toward the surface of the workpiece to be coated, so as to increase the coating speed of the workpiece to be coated, and to bombard the surface of the workpiece to be coated with positive ions during the process, thereby facilitating the strength of the film on the surface of the workpiece to be coated.

The reaction chamber 11 has a feeding port 101, wherein the feeding port 101 may be located at a rear plate of the reaction chamber 11. The mixing device 40 is communicably connected to the feed port 101.

The reaction chamber 11 has at least one pumping hole 102, and the pumping part 12 pumps air from the reaction chamber 11 through the pumping hole 102.

The reaction chamber 11 further comprises a control door 112 and a reaction chamber 111, wherein the control door 112 is openably or closably connected to the reaction chamber 111. When the control door 112 is opened, the reaction chamber 100 is exposed, and when the control door 112 is closed, the reaction chamber 100 is closed.

The control gate 112 may be a front plate of the reaction chamber 11. That is, the reaction chamber 11 may be opened from the front side. The control gate 112 may also be a ceiling of the reaction chamber 11. That is, the reaction chamber 11 may also be opened from the top side. It should be understood by those skilled in the art that the form of opening the reaction chamber 11 is merely illustrative, and the manner of opening the reaction chamber 11 of the deposition reaction apparatus 10 of the present invention is not limited thereto.

In this embodiment, the reaction chamber 11 is configured as a rectangular structure, and the front plate of the reaction chamber 11 is the part of the reaction chamber 11 that the user faces when operating or observing the inside of the reaction chamber 11. In other embodiments of the present invention, the reaction chamber 11 may have a cylindrical structure or a circular structure. It will be understood by those skilled in the art that the present invention is only illustrative, and the shape of the reaction chamber 11 is not limited to the above examples.

The reaction chamber 11 has an opening 103, wherein the opening 103 is connected to the reaction chamber 100, and when the control door 112 is opened, the multi-layer support 131 can be placed in the reaction chamber 100 through the opening 103. When the coating is finished, the control door 112 is opened, and the multi-layer support 131 can be directly taken out from the opening 103 of the reaction chamber 100. The workpiece to be coated placed on the multi-layered support 131 can also be taken out together with the multi-layered support 131. That is, the control door 112 controls the opening and closing of the opening 103.

The multi-layer support 131 can be used for placing a plurality of workpieces to be coated, and the reaction chamber 11 is designed to have a predetermined size to accommodate the multi-layer support 131 and the plurality of workpieces to be coated, so that the plurality of workpieces to be coated can be coated at a single time.

Referring to fig. 4A to 7, the work carrier gas heating apparatus 20 includes an intake control portion 21 and at least one heating chamber 22. The intake control unit 21 is configured to control the supplied working carrier gas, and further, the intake control unit 21 is configured to control a flow rate of the supplied working carrier gas. That is, the working carrier gas is controllably fed into the inside of the device main body 221 through the intake control section 21. The device main body 221 serves to heat the fed working carrier gas so that the temperature of the working carrier gas is raised, preferably so that the temperature of the working carrier gas approaches or coincides with the reaction temperature.

The heating chamber 22 includes a device body 221 and a heating element 222, and the heating element 222 is used for heating the device body 221, so that the temperature of the working carrier gas entering into the device body 221 is increased.

The device main body 221 has an inlet 2201, and the air inlet control portion 21 is connected to the inlet 2201 through an air inlet pipe, that is, the working carrier gas entering from the air inlet control portion 21 enters the interior of the device main body 221 of the heating chamber 22 through the inlet 2201.

Referring to fig. 5, the apparatus main body 221 has a preheating chamber 2202 and a heating chamber 2203, the preheating chamber 2202 and the heating chamber 2203 are partially communicated, and the inlet 2201 is communicated with the preheating chamber 2202, that is, the working carrier gas entering the apparatus main body 221 enters the preheating chamber 2202 first, passes through the preheating chamber 2202 for preheating and then is gradually sent into the heating chamber 2203.

It is worth mentioning that the preheating chamber 2202 and the heating chamber 2203 are partially communicated, that is, the inside of the device main body 221 is not an integral communicating space but a space partially isolated from each other, and the entering working carrier gas is slowly flowed by isolating the communicating space from each other to be gradually heated.

Further, the preheating chamber 2202 and the heating chamber 2203 are vertically juxtaposed, that is, the preheating chamber 2202 is above the heating chamber 2203. The working carrier gas enters the inlet 2201, enters the pre-heating chamber 2202 and then enters the heating chamber 2203.

Referring to fig. 5, a partial communication passage 2204 is provided between the preheating chamber 2202 and the heating chamber so that the preheating chamber 2202 and the heating chamber 2203 are partially communicated. Further, the preheating chamber 2202 and the heating chamber 2203 are partially communicated laterally. It is worth mentioning that the local communication channel 2204 and the inlet 2201 are arranged in a staggered manner, that is, the local communication channel 2204 and the inlet 2201 are not in the same line, and the arrangement is such that the working carrier gas entering from the inlet 2201 does not directly enter the heating chamber 2203, but stays in the preheating chamber 2202 in advance for sufficient preheating.

It is also worth mentioning that the heating path of the working carrier gas in the working carrier gas heating device 20 is primarily extended by the position arrangement of the preheating chamber 2202 and the heating chamber 2203, thereby improving the heating efficiency of the liquid working carrier gas.

Further, the heating assembly 222 includes a preheating part 2221 and a heating part 2222, the preheating part 2221 preheats the preheating chamber 2202, and the heating part 2222 is used for heating the heating chamber 2203. It is also worth mentioning that the preheating part 2221 and the heating part 2222 can independently heat the preheating chamber 2202 and the heating chamber 2203, respectively. That is to say, the preheating element 2221 and the heating element 2222 respectively provide different or differentiated heating conditions for the preheating chamber 2202 and the heating chamber 2203, so that the heating conditions of the preheating chamber 2202 and the heating chamber 2203 are adapted to the temperature state of the gas therein, and the gas therein is heated uniformly.

It is also worth mentioning that, during heating, the entering working carrier gas is preheated at a lower temperature, and then heated at a higher temperature, so that the working carrier gas can be gradually heated from the low temperature to the high temperature.

Further, the apparatus main body 221 includes a main body 2211 and a cover 2212, and the cover 2212 is detachably attached to the main body 2211. When the cover 2212 is attached to the main body 2211, the preheating chamber 2202 and the heating chamber 2203 are formed between the cover 2212 and the main body 2211. For example, the cover 2212 may be removably secured to the body 2211 by a set of securing elements 2215.

The main body 2211 includes a partition wall 22111, and the partition wall 22111 divides the inside of the device main body 221 into two spaces, a first compartment 221101 and a second compartment 221102. The first compartment 221101 and the second compartment 221102 form the preheating chamber 2202 and the heating chamber 2203, respectively, with the space inside the cover 2212. The local communication passage 2204 is formed between the inside of the cover 2212 and the top of the partition 22111. It should be noted that the partition 22111 may have the same height as the side wall of the main body 2211, and may be higher or lower than the side wall of the main body 2211.

It is worth mentioning that the inlet 2201 is disposed opposite to the partition wall 22111, so that the working carrier gas entering the inlet 2201 does not directly reach the local communication channel 2204, but stays in the preheating cavity 2202 for a relatively long time through the buffering action of the partition wall 22111, can be preheated more sufficiently and primarily heated, and the phenomenon of uneven heating is avoided.

It is also worth mentioning that the inlet 2201 of the device body 221 is located at a higher position and the outlet 2205 is located at a lower position so that the working carrier gas can sufficiently enter the device body 221 to avoid concentration unevenness.

The device body 221 further includes a seal 2213, the seal 2213 being disposed between the body 2211 and the cover 2212 such that the cover 2212 is sealingly attached to the body 2211.

The device main body 221 further has an outlet 2205, and the outlet 2205 is communicated with the heating cavity 2203, that is, the working carrier gas is heated by the heating cavity 2203 and then flows out of the outlet 2205. Further, the outlet 2205 and the local communication channel 2204 are arranged contralaterally to increase the distance between the local communication channel 2204 and the outlet 2205. It is worth mentioning that by the location of the outlet 2205 and the local communication channel 2204, the heating path of the working carrier gas in the device main body 221 can be further extended, and the uniform temperature distribution of the working carrier gas can be promoted.

Referring to fig. 4A to 7, the mixing device 40 includes a first interface 411, a second interface 412 and a third interface 413, the first interface 411 is connected to the reaction chamber 11 of the deposition reaction device 10, the second interface 412 is connected to the heating chamber 22 of the working carrier gas heating device 20, and the third interface 413 is connected to the raw material supply device 30.

The mixing device 40 has a first inlet 4120 communicating with the outlet 2205 of the device body 221 of the heating chamber 22 so that the intermediate gas flowing out of the device body 221 enters the mixing device 40. The second port 412 of the mixing device 40 is extendedly connected to the first tap 2214, and further, the first tap 2214 extends into the second port 412, such that the first tap 2214 is stably and sealingly connected to the second port 412. The second port 412 forms the first inlet 4120.

The mixing device 40 has a mixing chamber 401, and the first inlet 4120 is communicated with the mixing chamber 401, that is, the working carrier gas flowing from the first inlet 4120 enters the mixing chamber 401 to be further heated.

The mixing device 40 has a second inlet 4130, i.e. the working carrier gas flows into the mixing device 40 after being heated by the mixing chamber 401.

Further, the second inlet 4130 of the heating chamber 22 is located at a higher position of the mixing device 40, and the first inlet 4120 is located at a lower position, that is, the position of the second inlet 4130 is higher than that of the first inlet 4120, so that the working carrier gas entering the mixing device 40 is fully heated and then automatically lifted from a lower position to enter the second inlet 4130 to flow out, thereby improving the heating efficiency of the working carrier gas, or the working carrier gas is fully heated and then sent out, and the working carrier gas flowing out is prevented from being doped with working carrier gases with different temperatures.

The mixing device 40 has a first outlet 4110, the first port 411 forms the first outlet 4110, and the first outlet 4110 communicates the reaction chamber 100 with the mixing chamber 401.

The mixing device 40 includes a mixing device body 41 and a mixing device cover 42, and the mixing device body 41 and the mixing device cover 42 form the mixing chamber 401 therein. The mixing device cover 42 is detachably attached to the mixing device main body 41. More specifically, the mixing device cover 42 can be removably secured to the mixing device body 41 by a second set of securing elements 44.

The mixing device 40 includes a second sealing member 43, and the second sealing member 43 is disposed between the mixing device body 41 and the mixing device cover 42 such that the mixing device cover 42 is sealingly connected to the mixing device cover 42.

It should be noted that, with reference to fig. 5 and 6, the work carrier gas heating device 20 further comprises a heat insulating seal 23, and the heat insulating seal 23 is disposed at a position where the heating chamber 22 and the mixing device 40 meet. The heat insulation seal 23 allows the device body 221 and the mixing device 40 to be connected in a sealing manner, and allows the device body 221 and the mixing device 40 not to be in direct contact at the joint position, thereby preventing heat transfer between the heating chamber 22 and the mixing device 40, and further allows the device body 221 of the heating chamber 22 and the mixing device 40 to be heated and gasified independently, thereby avoiding the influence of heating on the mixing process.

Further, referring to fig. 6, the heat insulating seal 23 is disposed at a position where the first discharge nozzle 2214 of the apparatus main body 221 and the second port 412 of the mixing apparatus 40 meet. More specifically, the first tap 2214 and the second port 412 each have a projection, and the insulating seal 23 is sandwiched between the projections of the first tap 2214 and the second port 412.

The first tap 2214 extends into the second interface 412 and an insulating gap 41201 is formed in the extension such that heat transfer does not occur from direct contact between the first tap 2214 and the second interface 412.

In other words, the thermal insulation seal 23 thermally insulates the connected vaporizing parts so that the device body 221 of the heating chamber 22 and the mixing device 40 do not directly contact each other to generate heat transfer, thereby being able to operate independently.

It is worth mentioning that, in this embodiment of the present invention, the preheating part 2221 and the heating part 2222 can perform heating operations independently, that is, different heating conditions are provided respectively, so as to correspond to different states or stages of the working carrier gas respectively, thereby making the heating efficiency of the working carrier gas in the corresponding states higher.

Further, an embodiment of the present invention further provides a coating method of the coating system 100, including the steps of:

s01, performing negative pressure generation operation such as vacuum pumping on the reaction cavity 11, and when coating, pumping out air in the reaction cavity 11 through the air pumping part 12 to control the air pressure in the reaction cavity 11 within a preset range so as to reduce the influence of residual air in the reaction cavity 11 on coating quality as much as possible until the air pressure in the reaction cavity 11 reaches the preset air pressure range.

S02, performing a surface etching process or a surface cleaning and activating process on the surface of the workpiece to be plated, specifically, continuously filling a mixed gas formed by a working carrier gas and a reaction raw material gas provided by the mixing device 40 into the reaction chamber 11 to perform the surface etching process on the workpiece to be plated, preferably, introducing argon or helium into the reaction chamber 11 through the mixing device 40, wherein the flow rate is approximately 10 seem to 1000 seem, preferably 80 or 100 seem. Meanwhile, the air-extracting part 12 is used for continuously extracting a certain amount of air from the reaction chamber 11 and maintaining the air pressure in the reaction chamber 11 within 0.01-100Pa, preferably within 8Pa, 10Pa or 100 Pa. Meanwhile, the discharge component 14 provides pulse voltage to act on the gas in the reaction chamber 11 to clean and activate the surface of the workpiece to be coated, so as to realize etching treatment on the surface of the workpiece to be coated. Preferably, the discharge part 14 provides a high-voltage pulse bias voltage of-100V to-5000V, the duty ratio is 1% to 90%, the power supply time is within 1 to 60 minutes (the power supply time is the time for cleaning and activating the surface of the workpiece to be coated in step S02), and preferably, the discharge part 14 provides a voltage of-3000V, the duty ratio is 20% or 30%, the frequency is 10kHz or 40kHz, the power supply time is 5, 10, 20, or 30min, and the like.

Alternatively, after the end of step S02, the intake control unit of the working carrier gas heating device 10 is turned off to stop the charging of the working carrier gas into the mixing device 40.

Optionally, after the step S02 is finished, continuously introducing a reaction raw material gas into the reaction chamber 11 through the mixing device 40, so as to prepare the film on the surface of the workpiece to be coated by means of plasma chemical vapor deposition. Alternatively, the flow rate of the gas to be ionized that is introduced into the reaction chamber 11 can be adaptively changed.

It is worth mentioning that, in the process of cleaning and activating the surface of the workpiece to be plated, the flow rate of the gas to be ionized filled into the reaction cavity 11 through the mixing device 10 can be preset within a reasonable range, so as to prevent the phenomenon that the flow rate of the gas to be ionized filled into the reaction cavity 11 is too high or too low, which may affect the ionization effect of the surface of the workpiece to be plated. The pulse voltage provided by the discharge part 14 is preset in a reasonable range, so as to prevent the voltage from being too low to achieve a good cleaning and activating effect on the surface of the workpiece to be coated, or prevent the workpiece to be coated from being damaged due to too high voltage. The power supply time of the discharge part 14 can be preset in a reasonable range, so as to prevent that the power supply time is too short to achieve a good cleaning and activating effect on the surface of the workpiece to be coated, or that the power supply time is too long to prolong the period of the whole coating process, thereby causing unnecessary waste.

And S03, coating the surface of the workpiece to be coated, specifically, filling gas into the reaction cavity 11 through the mixing device 40, preferably, the gas flow to be ionized filled into the reaction cavity 11 is 10-200sccm, and the gas flow of the reaction raw material such as hydrocarbon gas is 50-1000 sccm. Meanwhile, the air-extracting part 12 is used for continuously extracting a certain amount of air from the reaction chamber 11 and maintaining the air pressure in the reaction chamber 11 within 0.01-100Pa, preferably within 8Pa, 10Pa or 100 Pa. Meanwhile, the film is prepared on the surface of the workpiece to be coated by using a mode that the discharge part 14 provides radio frequency voltage and/or high-voltage pulse bias auxiliary plasma chemical vapor deposition, wherein the power of the radio frequency voltage provided by the discharge part 14 is 10-800W, or the voltage of the pulse bias provided by the discharge part 14 is-100V to-5000V, the duty ratio is 10% -80%, the power supply time of the discharge part 14 is 5-300 minutes, namely in the step S03, the coating time of the workpiece to be coated is approximately 5-300 minutes.

It should be understood that, in the step S03, the voltage or power of the discharge unit 14 can be preset, and under the voltage provided by the discharge unit 14, substantially all the gas in the reaction chamber 11 can be ionized into plasma, so that a plasma environment is formed in the reaction chamber 11, so as to facilitate the film coating system 1 to prepare the film on the surface of the workpiece to be coated by chemical vapor deposition.

In step S03, in particular, the discharge component 14 can provide a radio frequency and/or high voltage pulse bias to act on the gas in the reaction chamber 11, wherein the discharge component 14 discharges the gas to be ionized and the gas such as the reaction raw material gas in the reaction chamber 11 by providing a radio frequency electric field so as to make the reaction chamber 11 in a plasma environment and the reaction raw material gas in a high energy state. The discharge component 14 generates a strong electric field in the reaction chamber 11 by providing a strong voltage in the high-voltage pulse bias, so that the active particles in a high-energy state are accelerated to deposit on the surface of the workpiece to be coated under the action of the strong electric field, and an amorphous carbon network structure is formed. The discharge part 14 provides a state of a null voltage or a low voltage in a high-voltage pulse bias voltage, so that the amorphous carbon network structure deposited on the surface of the workpiece to be coated is subjected to free relaxation, and the carbon structure is converted to a stable phase-bent graphene sheet layer structure under the thermodynamic action and is embedded in the amorphous carbon network, so that the film is formed on the surface of the workpiece to be coated.

It is worth mentioning that, in the step S03, the work carrier gas heating device 20 and the raw material providing device 30 can be turned off to stop the filling of the gas to be ionized into the reaction chamber 11, or the flow rate of the gas filled into the reaction chamber 11 can be preset within a reasonable range.

It is to be understood that the ratio of the flow rates of the gas to be ionized, such as nitrogen, helium or argon, the reaction raw material gas or the doping element reaction raw material gas, which is filled in the reaction chamber 11, determines the atomic ratio in the thin film, thereby affecting the quality of the thin film. By presetting parameters such as the power or voltage of the radio frequency and/or pulse bias voltage provided by the discharge part 14, the regulation of relevant parameters such as the temperature, the ionization rate or the deposition rate in the coating process can be realized, or by presetting the power supply time of the discharge part 14, the phenomena of thin film, poor hardness performance and the like caused by too short coating time or the phenomena of influence on transparency and the like caused by thick film caused by too long coating time can be prevented.

And S04, when the film coating time in the step S03 is over, closing the discharge part 14, closing the air exhaust part 12, and introducing air through the working carrier gas heating device 20. Namely, gas is introduced into the mixing device 40 through the working carrier gas heating device 20, and then a certain amount of air is filled into the reaction cavity 11 through the mixing device 40 to make the reaction cavity 11 return to a normal pressure state, so that a worker can open the reaction cavity 11 and take out the workpiece to be coated, and the coating process is finished at one time. In the whole coating process, the coating system 1 has good process controllability in the process of preparing the film, and is beneficial to quickly preparing the target film.

FIGS. 8A and 8B are schematic views of a mixing device 40 of a coating system 1 according to a second embodiment of the present invention.

In this embodiment of the present invention, the mixing device 40 includes a carrier gas pipe 45 and a raw material pipe 46, the carrier gas pipe 45 is used for conveying the working carrier gas, and the raw material pipe 46 is used for conveying the reaction raw material gas. The carrier gas pipe 45 can be communicated with the working carrier gas heating device 20 so as to obtain the heated working carrier gas from the working carrier gas heating device 20, and the raw material pipe 46 can be communicated with the raw material supplying device 30 so as to obtain the reaction raw material gas from the raw material supplying device 30.

Further, the carrier gas pipe 45 and the raw material pipe 46 are disposed inside and outside in a nested manner, and in one embodiment, the carrier gas pipe 45 is disposed inside the raw material pipe 46, that is, the carrier gas pipe 45 and the raw material pipe 46 form an inner space and an outer space for respectively conveying the working carrier gas and the reaction raw material gas. In other words, the communicating space located inside carries the working carrier gas, while the annular space located outside carries the reaction raw material gas. It should be noted that, in another embodiment of the present invention, the carrier gas pipe 45 is disposed outside the raw material pipe 46, that is, the transport paths of the working carrier gas and the reaction raw material gas are interchanged, and the present invention is not limited in this respect.

The mixing device 40 further comprises a premixing chamber 47, and the carrier gas pipe 45 and the raw material pipe 46 are connected to the premixing chamber 47, that is, the gas in the working carrier gas pipe 45 and the raw material pipe 46 are fed into the premixing chamber 47 at the same position, and are premixed in the premixing chamber 47. The premixing chamber 47 can be communicated with the deposition reaction apparatus so that the mixed gas in the premixing chamber 47 is fed into the deposition reaction apparatus.

It should be mentioned that, the gas carrying pipe 45 and the raw material pipe 46 are sleeved inside and outside, so that the raw material pipe 46 is hidden inside the gas carrying pipe 45, and the occupied conveying space is reduced, that is, the volume of the equipment is reduced. On the other hand, it is convenient to feed the working carrier gas and the reaction raw material gas into the premixing chamber 47 at the same position in the premixing chamber 47, so that the mixing starts at the feed position and becomes more uniform.

In one embodiment of the present invention, the gas carrier pipe 45 or the raw material pipe 46 is provided with a plurality of communicating holes 450 in the inner pipe, so that the gases in the gas carrier pipe 45 and the raw material pipe 46 can be gradually diffused and mixed with each other during the transportation. The arrangement of the communication holes may be selected according to the gas supply conditions, for example, the communication holes may be provided at intervals on the entire circumferential wall of the gas carrier pipe 45 or the raw material pipe 46, or may be provided at intervals on the circumferential wall of one gas carrier pipe 45 or the raw material pipe 46, and may not be provided on the circumferential wall of the other gas carrier pipe 45 or the raw material pipe 46.

In one embodiment of the present invention, the carrier gas pipe 45 is connected to the working carrier gas heating device 20, the raw material pipe 46 is connected to the raw material supply device 30, and the premixing chamber 47 is connected to the reaction chamber 11. The pre-mixing chamber 47 has a structure identical to that of the mixing device 40.

In one embodiment of the present invention, the premix chamber 47 includes a heat retention portion to allow the gas to mix within the premix chamber 47 at a predetermined temperature.

FIG. 9 is a schematic view of a mixing device 40 of the coating system 1 according to a third embodiment of the present invention. In this embodiment of the present invention, the carrier gas pipe 45 and the raw material pipe 46 are arranged side by side. That is, the carrier gas pipe 45 and the raw material pipe 46 are arranged along the same conveying line.

The carrier gas pipe 45 and the raw material pipe 46 are connected to the premixing chamber 47. Further, the carrier gas pipe 45 and the raw material pipe 46 are connected side by side to the premixing chamber 47, that is, the gases respectively supplied from the carrier gas pipe 45 and the raw material pipe 46 enter the premixing chamber 47 at positions close to each other, so that the working carrier gas and the reaction raw material gas are mixed with each other as soon as they enter the premixing chamber 47.

The pre-mixing chamber 47 is controllably connected to the reaction chamber of the deposition reaction apparatus. During operation, the working carrier gas and the reactant gas are fed into the premixing chamber 47 together, and are fully mixed in the premixing chamber 47 for a predetermined time, and are further fed into the reaction chamber 11, that is, the gas entering the reaction chamber 11 is the gas obtained by fully mixing the working carrier gas and the reactant gas.

FIG. 10 is a schematic view of a plating system 1 according to a fourth embodiment of the invention. In this embodiment of the present invention, the coating system 1 includes a mixing device 40 and a buffer pressure stabilizing device 50, and the mixing device 40 is controllably connected to the buffer pressure stabilizing device 50. The mixing device 40 is used for premixing the working carrier gas and the reaction raw material gas, and the buffer pressure stabilizing device 50 is used for stabilizing the pressure of the mixed gas.

The buffer pressure stabilizing device 50 is connected to the reaction chamber 11 of the deposition reaction device 10. That is, the gas mixed by the mixing device 40 is sent to the buffer pressure stabilizing device 50, and then sent to the reaction chamber after being stabilized and buffered by the buffer pressure stabilizing device 50. It should be noted that, in the embodiment of the present invention, the gas is mixed by the mixing device 40 and then fed into the buffer pressure stabilizing device 50, and the buffer pressure stabilizing device 50 adjusts and stabilizes the pressure of the incoming gas and further mixes the gas, that is, the gas is mixed more uniformly, and the pressure is adjusted and controlled within a predetermined range, so that the mixed gas entering the reaction chamber 11 is more uniform and the pressure is uniform and controllable, thereby reducing the unstable release of the gas.

It should also be mentioned that the uniformity of the gas mixing and the stability of the released pressure have a certain influence on the uniformity of the film layer formed in the reaction chamber 11, and in the embodiment of the present invention, the uniformity of the inside and the outside of the film layer formed in the reaction chamber 11 is improved by improving the uniformity of the gas mixing and the uniformity of the gas pressure, that is, the inside and the outside performance of the film layer are more consistent.

The buffer pressure stabilizing device 50 comprises a pressure stabilizing tank 51 and a heat preservation component 52, wherein the pressure stabilizing tank 51 is used for stabilizing pressure and buffering gas, and the heat preservation component 52 is used for preserving heat of the pressure stabilizing tank 51. That is, the buffer pressure stabilizing device 50 buffers and stabilizes the incoming gas at a predetermined temperature.

In one embodiment of the present invention, the thermal insulation component 52 is a liquid thermal insulation component, for example and without limitation, the thermal insulation component is insulated by thermal circulation liquid with a predetermined temperature or by coating with thermal insulation material, for example and without limitation, paraffin oil, engine oil, white oil, etc. In other embodiments of the present invention, the heat preservation may be performed by other means, such as heat preservation and the like. It should also be mentioned that the heat preservation temperature of the buffer pressure stabilizing device 50 is selectable, that is, the buffer pressure stabilizing device can be set at different temperatures for pressure stabilization and buffer storage according to different film layers or the requirement of gas activity.

The buffer pressure stabilizing device 50 comprises a plurality of stages of pressure stabilizing tanks 51, the plurality of stages of pressure stabilizing tanks 51 are controllably communicated, and the buffer pressure stabilizing device 50 comprises a pressure regulating part 53, wherein the pressure regulating part 53 is arranged between two connected pressure stabilizing tanks 51. That is, the pressure between the two surge tanks 51 is controllably communicated through the pressure regulating member 53. Preferably, the pressure regulating member 53 is an electromagnetic pressure control valve. The pressure regulating member 53 is selectively disposed between the mixing apparatus 40, the buffer pressure stabilizing apparatus 50 and/or the deposition reaction apparatus 10.

Further, the pressure regulating member 53 may be provided in a connection line between the surge tank 51 and the reaction chamber so that the surge tank 51 and the reaction chamber 11 are controllably in gas communication.

Further, the temperatures inside the surge tanks 51 of the plurality of stages may be adjusted to be the same or different. In one embodiment, the pressure in the multiple stages of buffer autoclaves 51 is adjusted to be uniform and then fed into the reaction chamber.

The coating system 1 further comprises a heat preservation pipe 60, wherein the heat preservation pipe 60 is used for connecting the premixing chamber 47 and the buffer pressure stabilizing device 50, that is, the mixed gas is sent to the buffer pressure stabilizing device 50 in a heat preservation manner. Preferably, the thermal insulation pipe 60 is a liquid thermal insulation pipe, for example and without limitation, insulated by a thermal circulation liquid of a predetermined temperature or coated with an insulation material, for example and without limitation, paraffin oil, engine oil, white oil, and the like. In other embodiments of the present invention, the heat preservation may also be performed by other means, such as heat preservation, etc.

In one embodiment of the present invention, the thermal insulation pipe 60 is selectively connected between the mixing device 40, the plurality of surge tanks 51 and/or the reaction chamber 11. That is, when the gas is transported between different facilities, the gas may be transported in a manner selected to be kept warm or not.

The coating system 1 comprises a dispersing air-feeding member 70, the dispersing air-feeding member 70 is disposed in the reaction chamber 11, and the dispersing air-feeding member 70 is used for dispersing air-feeding into the reaction chamber. The dispersing air feeder 70 is in controllable communication with the buffer pressure stabilizer 50, that is, in operation, the air in the buffer pressure stabilizer 50 is controllably fed to the dispersing air feeder 70 through the feeding pipe, and is further released into the reaction chamber 11 through the dispersing air feeder 70. Preferably, the dispersing air-feeding member 70 has a plurality of openings, for example, but not limited to, the dispersing air-feeding member 70 is a tubular member, and a plurality of openings are formed on the wall of the tubular member to form a honeycomb-shaped feeding port, so that the gas is uniformly discharged from the entire circumferential side. In other embodiments of the present invention, the dispersion air-sending member 70 may be configured in other structures, such as square, disc, etc., and the peripheral wall may be configured with holes or connected slits, such as grid-like slits, but the present invention is not limited in this respect.

Further, the coating system 1 includes a plurality of dispersing air-sending members 70, and the plurality of dispersing air-sending members 70 are respectively and controllably communicated with the plurality of surge tanks 51, that is, the gas in the plurality of surge tanks 51 is respectively released inside the reaction chamber 11 through the different dispersing air-sending members 70.

Further, a plurality of the dispersion gas feeding members 70 are disposed at predetermined positions in the reaction chamber 11. In an embodiment of the present invention, a plurality of the dispersion air-sending members 70 are arranged from top to bottom along the central axis of the reaction chamber 11, for example, but not limited to, three dispersion air-sending members 70 are respectively disposed at the upper position, the middle position and the lower position of the reaction chamber 11, that is, the gas in each surge tank 51 is respectively sent to different positions of the reaction chamber 11 through different positions of the dispersion air-sending members 70. By way of example and not limitation, a plurality of the dispersion gas feeders are arranged at different height positions of the reaction chamber, such as an upper part, a middle part and a lower part; optionally, a plurality of the dispersing air-sending pieces are arranged at different positions in the transverse direction of the same height of the reaction cavity; optionally, a plurality of the dispersion gas feeds are arranged in a predetermined array in the space within the reaction chamber.

In one embodiment of the present invention, the pressure of a plurality of surge tanks 51 may be adjusted in accordance with the position of the dispersion air sending member 70. By way of example and not limitation, the surge tank 51 communicating with the lower distributed air-sending member 70 is at a higher pressure, while the surge tank 51 communicating with the higher distributed air-sending member 70 is at a lower pressure.

In one embodiment of the present invention, the deposition reaction apparatus 10 includes a support member 13, the support member 13 has a central channel 130, the dispersion gas supplier 70 is disposed in the central channel 130, the support member 13 includes at least one layer 132, and the layer 132 surrounds the central channel 130. A plurality of the layer 132 are arranged at intervals along the central passage 130 so that a plurality of coated products can be placed on the layer 132.

In one embodiment of the invention, the support member 13 is axially rotatable, that is, coated in a dynamic state. Preferably, the support member 13 is a circular turret, i.e., the layer 132 is circular in configuration. In other embodiments of the present invention, the support member 13 may have other structures, and the present invention is not limited in this respect.

Referring to fig. 11, in an embodiment of the present invention, the gas supply process of the coating system 1 is that the working carrier gas and the reactant gas raw material are premixed, further heated and insulated by pipeline, and respectively delivered to the plurality of surge tanks 51, for surge buffering, further controlled by pressure regulation, and the gas is released to the reaction chamber through the dispersion gas-delivering member 70, and more specifically, delivered to the upper, middle and lower positions of the reaction chamber through the plurality of dispersion gas-delivering members 70.

It is worth mentioning that in an embodiment of the present invention, the working carrier gas and the reactant gas can be uniformly mixed in advance by premixing the working carrier gas and the reactant gas raw materials, so that the gas tends to be uniform from the source, further, the mixed gas in a predetermined temperature state is conveyed by heat preservation, the temperature of the mixed gas is not reduced in the conveying process, the occurrence of adverse reaction or other adverse reactions is prevented, or the reduction of activity is prevented, further, the pressure of the mixed gas is adjusted before entering the reaction cavity by means of pressure stabilizing buffer, the gas can be deeply mixed in more space and time, and the pressure is matched with the pressure required during film coating; further, in the reaction cavity 11, by means of dispersing feeding, the gas entering the reaction cavity 11 can be uniformly released, and the gas is released in groups at different positions, so that the amount and pressure of mixed gas at different positions can tend to be consistent, and the uniformity of the whole coating film tends to be consistent.

It will be appreciated by persons skilled in the art that the embodiments of the invention described above and shown in the drawings are given by way of example only and are not limiting of the invention. The advantages of the present invention have been fully and effectively realized. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.

Claims

1. Coating system, its characterized in that includes:

a working carrier gas heating device for heating the working carrier gas; and

2. The coating system of claim 1, wherein the working carrier gas is selected from the group consisting of: inert gas, nitrogen and fluorocarbon gas.

3. The plating system according to claim 1, wherein a heating temperature of the working carrier gas heating means coincides with a reaction temperature of the deposition reaction means.

4. The plating system according to claim 1, further comprising a mixing device, wherein the working carrier gas heating device is in communication with the mixing device, the source material supply device is in communication with the mixing device, and the mixing device is in communication with the deposition reaction device, and wherein, during operation, the working carrier gas and the reaction source material gas are mixed in the mixing device and then enter the deposition reaction device.

5. The plating system of claim 4, further comprising a buffer pressure stabilizer for stabilizing and buffering the mixed gas.

6. The plating system according to claim 5, wherein the buffer pressure-stabilizing device comprises a pressure-stabilizing tank and a heat-insulating member for insulating the pressure-stabilizing tank.

7. The plating system according to claim 5, wherein the plating system comprises a plurality of surge tanks each controllably connected to the deposition reaction apparatus.

8. The plating system of claim 5, wherein the buffer pressure stabilizer comprises a pressure regulator selectively disposed between the mixing device, the buffer pressure stabilizer, and/or the deposition reaction device.

9. The plating system of claim 5, further comprising a thermal insulating tube selectively communicating between the mixing device, the buffer pressure stabilizer, and/or the deposition reaction device.

10. The plating system of any of claims 5 to 9, further comprising a dispersion gas feed disposed in the deposition reactor and controllably connected to the buffer pressure stabilizer.

11. The plating system according to any one of claims 5 to 9, which comprises a plurality of dispersing air-feeding members respectively disposed at different height positions in a reaction chamber of the deposition reaction apparatus.

12. The coating system of claim 7, comprising a plurality of discrete air feeds in controllable communication with a plurality of surge tanks, respectively.

13. The plating system according to any one of claims 1 to 9, wherein the working carrier gas heating device comprises an intake control section that controls a flow rate of the working carrier gas into the heating chamber, and a heating chamber for heating the working carrier gas to a temperature.

14. The plating system according to claim 13, wherein the heating chamber comprises a device body having a preheating chamber and a heating chamber, the preheating chamber being in partial communication with the heating chamber, and a heating element for heating the preheating chamber and/or the heating chamber.

15. The plating system according to any one of claims 1 to 9, wherein the working carrier gas heating means comprises a main body, a cover and a sealing member, the cover being sealingly attached to the main body via the sealing member.

16. The plating system according to claim 4, wherein the work carrier gas heating means includes a heat insulating seal disposed between the work carrier gas heating means and the mixing means.

17. The plating system of claim 13, wherein the heating chamber includes a device body including a first tap, and the mixing device includes a second port into which the first tap extends.

18. The plating system of claim 17, wherein an insulating gap is formed between the first tap and the second port.

19. The plating system according to any one of claims 1 to 9, wherein the deposition reaction apparatus comprises a reaction chamber having a reaction chamber and a feed port communicating with the reaction chamber, and the working carrier gas heating apparatus and the deposition reaction apparatus communicate with the feed port.

20. The plating system according to claim 19, wherein the reaction chamber comprises a reaction chamber having an opening, and a control door for controlling the opening and closing of the opening.

21. The plating system according to claim 19, wherein the reaction chamber has a pumping port, and the pumping port is connected to a pumping member.

22. The plating system according to claim 19, wherein the deposition reaction apparatus comprises a support member provided in the reaction chamber for placing the workpiece to be plated.

23. The plating system according to claim 19, wherein the deposition reaction device includes a discharge section for providing an electric field to the reaction chamber.

24. The coating system according to any one of claims 4 to 9, wherein the mixing device comprises a carrier gas pipe and a raw material pipe, and the carrier gas pipe and the raw material pipe are sleeved with each other.

25. The coating system according to any one of claims 4 to 9, wherein the mixing means comprises a carrier gas pipe and a raw material pipe, the carrier gas pipe and the raw material pipe being arranged side by side.

26. The coating method is characterized by comprising the following steps:

(A) pumping out air in a reaction cavity of a deposition reaction device;

(B) heating working carrier gas, and introducing into the reaction cavity; and

27. The plating method according to claim 26, wherein the working carrier gas and the reaction raw material gas in the steps (B) and (C) are mixed and introduced into the reaction chamber.

28. The plating method according to claim 26, wherein the heating temperature of the working carrier gas coincides with the reaction temperature of the reaction raw material gas.

29. The plating method according to claim 26, wherein in the step (B), the working carrier gas is preheated, and the working carrier gas is reheated to a predetermined temperature.

30. Coating system, its characterized in that includes:

31. The plating system according to claim 30, wherein the buffer pressure-stabilizing device comprises a pressure-stabilizing tank and a heat-insulating member for insulating the pressure-stabilizing tank.

32. The plating system according to claim 30, wherein the heat retaining member is a liquid-heat retaining member.

33. The plating system of claim 30, wherein the plating system comprises a plurality of surge tanks each in controllable communication with the deposition reaction apparatus.

34. The plating system of claim 30, wherein the buffer pressure stabilizer comprises a pressure regulator selectively disposed between the mixing device, the buffer pressure stabilizer, and/or the deposition reaction device.

35. The plating system according to claim 30, further comprising a thermal insulation pipe selectively communicating between the mixing device, the buffer pressure-stabilizing device and/or the deposition reaction device.

36. The plating system of any of claims 30 to 35, further comprising a dispersion gas feed disposed in the deposition reactor and controllably connected to the buffer pressure stabilizer.

37. The plating system according to any one of claims 30 to 35, comprising a plurality of dispersing air-feeding members, which are respectively disposed at different height positions in the reaction chamber of the deposition reaction apparatus.

38. The plating system of claim 33, comprising a plurality of discrete air feeds in controllable communication with a plurality of surge tanks, respectively.

39. The coating system of claim 36, wherein the dispersion gas feed member is a tubular member having a wall with a plurality of openings.

40. The plating system according to claim 36, wherein the deposition reaction apparatus comprises a reaction chamber and a support member disposed within the reaction chamber, the support member having a central passage, the dispersion gas feed being disposed in the central passage.

41. The coating system of any one of claims 30 to 35, wherein the mixing device comprises a carrier gas tube and a feedstock tube, the carrier gas tube and the feedstock tube being nested inside and outside.

42. The coating system of any one of claims 30 to 35, wherein the mixing device comprises a carrier gas tube and a feedstock tube, the carrier gas tube and the feedstock tube being arranged side by side.

43. The feeding method of the coating system is characterized by comprising the following steps:

(A) mixing a working carrier gas and a reaction raw material gas;

44. The method of claim 43, wherein in step (B), the mixed gas is incubated.

45. The method of claim 43, wherein said step (A) is followed by: and preserving heat and conveying the mixed working carrier gas and reaction raw material gas.

46. The method of claim 43, wherein said step (C) comprises the steps of: and dispersing and releasing the mixed gas in the reaction cavity.

47. The method according to any one of claims 43-46, wherein prior to step (A) comprises: the working carrier gas is heated.