CN111020534B

CN111020534B - Film coating equipment

Info

Publication number: CN111020534B
Application number: CN201911228777.2A
Authority: CN
Inventors: 宗坚; 兰竹瑶; 单伟
Original assignee: Jiangsu Favored Nanotechnology Co Ltd
Current assignee: Jiangsu Favored Nanotechnology Co Ltd
Priority date: 2019-12-04
Filing date: 2019-12-04
Publication date: 2023-03-10
Anticipated expiration: 2039-12-04
Also published as: CN111020534A

Abstract

The invention provides a coating device, which comprises a reaction cavity, a gas supply part, a vacuum pumping device, a pulse power supply and a radio frequency power supply, wherein the reaction cavity is provided with a reaction cavity, the gas supply part is used for supplying gas to the reaction cavity, the vacuum pumping device is connected to the reaction cavity in a way of being communicated with the reaction cavity, the pulse power supply is used for supplying a pulse electric field to the reaction cavity, the radio frequency power supply is used for supplying a radio frequency electric field to the reaction cavity, a plurality of coating workpieces are kept in the reaction cavity, and when the pulse power supply and the radio frequency power supply are connected, the gas in the reaction cavity is ionized under the action of the radio frequency electric field and the pulse electric field to generate plasma and the plasma is deposited towards the surface of the workpiece to be coated.

Description

Film coating equipment

Technical Field

The invention relates to the field of film coating, in particular to film coating equipment.

Background

The film coating technology is an effective means for improving the surface performance of materials, and the film coating technology enhances the properties of the surface of a workpiece to be coated, such as strength, scratch resistance, wear resistance, heat dissipation, waterproofness, corrosion resistance, low friction and the like, by adopting a mode of forming a film layer on the surface of the workpiece to be coated.

From the market demand at present, the application of the coating technology in the field of electronic product protection is receiving more and more attention. Various electronic products to be coated, such as PCB circuit boards, electronic devices, mobile phones, keyboards, computers, etc. The global shipment of mobile phones per year reaches more than 15 hundred million, and the coating technology is widely applied to the protection of mobile phone PCB main boards, PCB auxiliary boards, charging ports, TF bayonets, earphone holes, screens and other components. Generally, the mobile phone requires that the film layer plated on the mobile phone not only has the function of enhancing the wear resistance and strength of the surface of the mobile phone, but also has higher requirements on the light transmittance of the film layer. The functional characteristics of the film layer are largely determined by factors such as coating equipment, process technology and the like.

Currently, vacuum vapor deposition is mainly used in the coating technology, which can be divided into Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). The physical vapor deposition method can be mainly divided into vacuum evaporation coating, sputtering coating and ion coating; the chemical vapor deposition method can be classified into thermal CVD, plasma CVD, laser CVD, ultraviolet CVD, and the like according to the manner of material activation.

The Plasma Enhanced Chemical Vapor Deposition (PECVD) coating technology has the characteristics of low deposition temperature, high deposition rate and the like, and is another common technical means for preparing the coating. The plasma enhanced chemical vapor deposition coating technology utilizes high-energy electrons in plasma to activate gas molecules, promotes free radical formation and ionization, generates a large amount of active particles such as high-energy particles with strong chemical activity, atoms or molecular ions and electrons, and the active particles react chemically to generate reaction products. Since the energetic electrons provide energy to the source material particles, the chemical vapor deposition can take place without the need to provide much external heat energy, thereby lowering the reaction temperature, which makes possible chemical reactions that would otherwise be difficult or slow.

In patent CN203411606U, a coating apparatus is disclosed, which utilizes plasma enhanced chemical vapor deposition coating technology to perform coating, and is provided with a plurality of cavities, at least one cavity is used for buffering before coating, at least one cavity is used for coating, and at least one cavity is used for cooling buffering after coating. Obviously, such a coating apparatus has a complicated structure, for example, a control valve needs to be arranged between the independent chambers, and a device for transferring a workpiece to be coated between the chambers needs to be additionally arranged. The difficulty and cost of maintenance may also be increased by the presence of multiple chambers once a failure occurs during the production process.

Therefore, how to provide a coating device which has a simple structure and is suitable for preparing a film layer on a large scale is a problem which needs to be solved urgently at present.

Disclosure of Invention

An object of the present invention is to provide a coating apparatus, wherein the coating apparatus is suitable for industrial use.

Another object of the present invention is to provide a coating apparatus, wherein the coating apparatus can simultaneously coat a large number of workpieces to be coated.

Another object of the present invention is to provide a coating apparatus, wherein the coating apparatus can etch and activate the surface of the workpiece to be coated, so as to facilitate the preparation of a film on the surface of the workpiece to be coated.

Another object of the present invention is to provide a coating apparatus, wherein the coating apparatus is capable of coating a workpiece to be coated with an organic film.

Another object of the present invention is to provide a coating apparatus capable of coating a workpiece to be coated with an inorganic film.

Another object of the present invention is to provide a coating apparatus, wherein the coating apparatus is capable of coating different types of workpieces to be coated.

Another object of the present invention is to provide a coating apparatus, wherein the coating apparatus is capable of coating a workpiece to be coated in a low temperature environment to avoid damage to the workpiece to be coated.

According to one aspect of the present invention, there is provided a coating apparatus for coating at least one workpiece to be coated, wherein the coating apparatus comprises:

a reaction chamber, wherein the reaction chamber is provided with a reaction chamber;

a gas supply part for supplying a gas to the reaction chamber;

the air exhaust device can be communicated with the reaction cavity and is connected with the reaction cavity; and

and when the pulse power supply is connected, the gas in the reaction cavity is ionized under the action of the pulse electric field to generate plasma and the plasma is deposited towards the surface of the coated workpiece.

According to at least one embodiment of the invention, the coating device further comprises a radio frequency power supply, wherein the radio frequency power supply is used for providing a radio frequency electric field for the reaction cavity, and when the radio frequency power supply is switched on, plasma is deposited towards the surface of the workpiece to be coated under the action of the pulse electric field and the radio frequency electric field.

According to at least one embodiment of the invention, at least one of the electrodes is arranged on the other side of the coated workpiece as a cathode of the pulse power supply to form the pulse electric field.

According to at least one embodiment of the present invention, at least one of the electrodes is disposed in the reaction chamber as an anode of the pulse power source.

According to at least one embodiment of the present invention, the coating apparatus further includes a multi-layered support, wherein the multi-layered support includes a plurality of support members held in the reaction chamber with a predetermined interval maintained therebetween, wherein a plurality of the workpieces to be coated are respectively supported by the support members, wherein the electrode as a cathode of the pulse power supply is provided to at least one of the support members.

According to at least one embodiment of the present invention, the coating apparatus further comprises a multi-layer support, wherein the multi-layer support comprises a plurality of supporting members, wherein a plurality of workpieces to be coated are respectively supported by the supporting members, and at least one of the supporting members serves as a cathode of the pulse power supply.

According to at least one embodiment of the invention, at least one of the electrodes is arranged on the support as an electrode of the radio frequency power supply.

According to at least one embodiment of the invention, at least one of the electrodes is arranged on the support as an anode of the pulsed power supply.

According to at least one embodiment of the invention, the electrode as the radio frequency power supply is located above the workpiece to be coated and the workpiece to be coated is supported on the support as the cathode of the pulsed power supply.

According to at least one embodiment of the invention, the support as a cathode of the pulsed power supply and the support as an anode of the pulsed power supply are alternately arranged.

According to at least one embodiment of the invention, positive ions in the ionized plasma of the radio frequency electric field move towards the coated workpiece from top to bottom and are deposited on the surface of the coated workpiece.

According to at least one embodiment of the invention, at least one layer of the multilayer support is used as the gas supply, and the support as the gas supply is located above the workpiece to be coated.

According to at least one embodiment of the present invention, the support as the gas supply part comprises a top plate and a bottom plate, wherein a space is reserved between the top plate and the bottom plate for temporary storage of gas, and the bottom plate is provided with at least one gas outlet for allowing gas to escape from a position above the workpiece to be coated.

According to at least one embodiment of the present invention, the support as the gas supply portion and the support as the cathode of the pulse power supply are alternately arranged.

According to at least one embodiment of the invention, the air outlets are uniformly arranged above the coated workpiece.

According to at least one embodiment of the invention, the support as the gas supply is conductively connected to the radio frequency power supply.

According to at least one embodiment of the present invention, the holder is removably placed in the reaction chamber, and the holder further includes at least two posts, wherein each of the supporting members is disposed on the posts at a predetermined interval.

According to at least one embodiment of the present invention, the bracket further comprises at least one insulating member, wherein the insulating member is disposed at the bottom end of the pillar to insulate the bracket from the reaction chamber.

According to at least one embodiment of the invention, the holder is detachably supported to the reaction chamber.

According to at least one embodiment of the present invention, each of the supporting members is mounted in parallel to the reaction chamber.

According to at least one embodiment of the present invention, the coating voltage of the pulse power supply is controlled to-300V to-3500V, and the frequency of the pulse power supply is 20KHz to 360KHz.

According to at least one embodiment of the invention, the duty cycle of the pulsed power supply is set to 5% to 100%.

According to at least one embodiment of the present invention, the degree of vacuum of the plating apparatus before plating is controlled to be not more than 2 × 10 ^-3 Pa。

According to at least one embodiment of the invention, the vacuum degree of the coating equipment in the coating process is set to be 0.1-20 Pa.

Drawings

FIG. 1 is a schematic view of a coating apparatus according to a preferred embodiment of the present invention.

FIG. 2 is a schematic view of another perspective of the coating apparatus according to the above preferred embodiment of the present invention.

FIG. 3 is a schematic view of a reaction chamber and a supporting device of the coating apparatus according to the above preferred embodiment of the present invention.

FIG. 4 is a schematic view of another preferred embodiment of the reaction chamber and the supporting device of the coating apparatus according to the above preferred embodiment of the present invention.

FIG. 5 is a schematic view of another preferred embodiment of the reaction chamber and the supporting device of the coating apparatus according to the above preferred embodiment of the present invention.

FIG. 6 is a schematic view of another preferred embodiment of the reaction chamber and the supporting device of the coating apparatus according to the above preferred embodiment of the present invention.

FIG. 7 is a schematic view of another preferred embodiment of the reaction chamber and the supporting device of the coating apparatus according to the above preferred embodiment of the present invention.

FIG. 8 is a schematic view of another preferred embodiment of the reaction chamber and the supporting device of the coating apparatus according to the above preferred embodiment of the present invention.

Detailed Description

The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.

It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the invention and simplicity in description, but do not indicate or imply that the device or component being referred to must have a particular orientation, be constructed in a particular orientation, and be constructed in a particular manner of operation, and thus, the terms are not to be construed as limiting the invention.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

The present invention provides a coating apparatus which can be used for producing various types of film layers such as DLC film (diamond like carbon film), organic film. The film coating equipment forms a film layer on the surface of a workpiece to be coated by chemical deposition by utilizing a plasma enhanced chemical deposition (PECVD) technology. Specifically, the workpiece to be coated is placed in a reaction chamber of the coating device to perform plasma enhanced chemical vapor deposition so as to form the film layer on the surface of the workpiece to be coated.

Plasma Enhanced Chemical Vapor Deposition (PECVD) processes have many advantages over other existing deposition processes: (1) dry deposition does not require the use of organic solvents; (2) The plasma etches the surface of the substrate, so that the deposited film has good cohesiveness with the substrate; (3) The coating can be uniformly deposited on the surface of the irregular matrix, and the gas phase permeability is extremely strong; (4) The coating has good designability, and compared with the micron-scale control precision of a liquid phase method, the chemical vapor phase method can control the thickness of the coating at a nanoscale scale; (5) The coating structure is easy to design, the chemical vapor method uses plasma for activation, a specific initiator is not required to be designed for initiating the composite coatings of different materials, and various raw materials can be compounded together by regulating and controlling input energy; (6) The compactness is good, the chemical vapor deposition method usually activates a plurality of active sites in the plasma initiation process, and is similar to the situation that a plurality of functional groups are arranged on one molecule in the solution reaction, and a cross-linking structure is formed among molecular chains through the plurality of functional groups; (7) As a coating treatment technical means, the coating treatment method has excellent universality, and the selection range of coating objects and raw materials used for coating is wide.

The invention provides the coating equipment, wherein the coating equipment can obtain coating workpieces coated with uniform film layers in batches. A pulse power supply can generate a strong electric field in the discharge process, and active particles in a high-energy state are accelerated to deposit on the surface of the workpiece to be coated under the action of the strong electric field so as to be beneficial to forming a firm film layer.

Referring to fig. 1 to 3, a coating apparatus 1 according to a preferred embodiment of the present invention is illustrated. The coating equipment 1 can be applied to industrial production, can coat a plurality of workpieces to be coated in batches, and can obtain higher product yield.

The coating apparatus 1 includes the reaction chamber 10, a gas supply part 20, an air exhaust device 30 and a support device 40.

The reaction chamber 10 has a reaction chamber 100, wherein the reaction chamber 100 can be kept relatively airtight so that the reaction chamber 100 can be maintained at a desired degree of vacuum.

The gas supplier 20 is used to supply gas toward the reaction chamber 100 of the reaction chamber 10.

Based on different film layer requirements, different reaction gases can be selected, and when the surface of the workpiece needs to be plated with the DLC film, the reaction gas can be C _x H _y Wherein x is an integer of 1 to 10 and y is an integer of 1 to 20. The reaction gas may be a single gas or a mixed gas. Alternatively, the reaction gas may be methane, ethane, propane, butane, ethylene, acetylene, propylene, or propyne, which is gaseous at normal pressure, or may be vapor formed by evaporation under reduced pressure or heating. That is, the raw material that is liquid at the normal temperature may be supplied to the reaction chamber 100 in a gaseous state through the gas supply part 20.

The gas may be a plasma source gas, and may be, but is not limited to, an inert gas such as, but not limited to, helium or argon, nitrogen, or a fluorocarbon gas such as, but not limited to, carbon tetrafluoride. The plasma source gas may be a single gas, or may be a mixture of two or more gases.

The gas may be an assist gas, and the assist gas may cooperate with the reactive gas to form a film layer to impart desired properties to the film layer, such as strength, flexibility, etc. The assist gas may be a non-hydrocarbon gas such as nitrogen, hydrogen, fluorocarbon gas, and the like. The auxiliary gas may be supplied to the reaction chamber 10 simultaneously with the reaction gas, or may be introduced in a sequential order according to the requirement. The addition of the auxiliary gas can adjust the proportion of each element in the film layer and the proportion of carbon-hydrogen bonds, carbon-nitrogen bonds and nitrogen-hydrogen bonds, thereby changing the property of the film layer.

The gas-extracting device 30 is connected to the reaction chamber 10 in a manner to be communicated with the reaction chamber 100. The gas-withdrawal device 30 is capable of controlling the pressure within the reaction chamber 100. The pressure in the reaction chamber 100 will affect the efficiency and the final result of the whole coating process. During the coating process, the pressure of the whole reaction chamber 100 is continuously changed in one stage along with the introduction of the raw material gas and the generation of the plasma, and the pressure of the reaction chamber 100 can be maintained in a desired stable state by adjusting the pumping power of the pumping device 30 and the gas supply power of the gas supply part 20.

That is, the pressure in the reaction chamber 100 may be reduced by the gas exhaust device 30, or may be increased in some processes by the gas supply part 20. For example, after the coating process is finished, air or other gas may be supplied through the gas supply unit 20, so that the gas pressure inside the reaction chamber 100 is equal to the gas pressure outside the reaction chamber 10, and the workpiece to be coated inside the reaction chamber 100 may be taken out. According to at least one embodiment of the present invention, the gas supply range of the gas supply part 20 supplies the reaction gas at a flow rate of 10sccm to 200sccm. According to at least one embodiment of the present invention, the flow rate of the ion source gas in the gas supply part 20 is controlled to be 50sccm to 500sccm.

The supporting device 40 is located in the reaction chamber 100 of the reaction chamber 10. The supporting device 40 can support the workpiece to be coated to hold the workpiece to be coated in the reaction chamber 100 of the reaction chamber 10. A plurality of the workpieces to be coated may be supported by the supporting device 40.

Further, the coating apparatus 1 comprises a discharge device 50, wherein the discharge device 50 is capable of providing a radio frequency electric field and/or a pulsed electric field, under which a plasma gas source can be ionized to generate a plasma. Under the pulse electric field, the plasma can move towards the workpiece to be coated so as to deposit on the surface of the workpiece to be coated.

The discharge device 50 is capable of providing alternating radio frequency electric fields and pulsed electric fields, and may also provide both radio frequency electric fields and pulsed electric fields.

Specifically, the discharge device 50 includes a radio frequency power source 51, a pulse power source 52 and at least one electrode 53, wherein the radio frequency power source 51 can generate the radio frequency electric field after being energized, the radio frequency power source 51 can be disposed outside the reaction chamber 10, the radio frequency power source 51 is conductively connected to one of the electrodes 53, and the electrode 53 is disposed in the reaction chamber 100. It will be appreciated that the rf power source 51 may also generate the alternating magnetic field in an electrodeless manner 53 to ionize the plasma gas source.

The pulse power source 52 can be disposed outside the reaction chamber 10, the pulse power source 52 is conductively connected to one of the electrodes 53, and the electrode 53 is located in the reaction chamber 100. The electrode 53 is provided as a cathode of the pulse power source 52 on one side of the workpiece to be coated to accelerate positive ions in the plasma toward the workpiece to be coated. The electrode 53 may be disposed on the front side or the back side of the workpiece to be coated. The electrode 53 may also be disposed in the reaction chamber 10 as an anode of the pulse power source 52. The two electrodes 53 as the anode and the cathode of the pulse power source 52 may be oppositely disposed, for example, the two electrodes 53 are respectively located on the front side and the back side of the workpiece to be coated, or the two electrodes 53 are respectively located on the two opposite side surfaces of the workpiece to be coated.

The workpiece to be coated on the support device 40 can be coated under the action of the rf electric field and/or the pulsed electric field, which are explained in the following.

In detail, the rf power source 51 discharges the gas provided by the gas supply unit 20 so that the entire reaction chamber 100 is in a plasma environment and the reaction gas is in a high energy state. The pulse power supply 52 generates a strong electric field in the discharging process, and the strong electric field is positioned near the workpiece to be coated, so that active ions in a plasma environment are accelerated to be deposited on the surface of the substrate under the action of the strong electric field.

When the surface of the workpiece needs to be plated with the DLC film, the reaction gas is deposited on the surface of the workpiece to be plated with the film under the action of a strong electric field to form an amorphous carbon network structure. When the pulse power supply 52 does not discharge, the film layer deposited on the workpiece to be coated is utilized to perform the free relaxation of the amorphous carbon network structure, the carbon structure is converted to a stable phase-a bent graphene sheet layer structure under the thermodynamic action, and the carbon structure is embedded in the amorphous carbon network to form a transparent graphene-like structure.

In more detail, in the present embodiment, the supporting device 40 includes a multi-layer support 41, wherein the multi-layer support 41 includes a plurality of supporting members 411, and the supporting members 411 are spaced apart from each other and are stacked and retained in the reaction chamber 100. The workpiece to be coated is placed on one or more layers of the multi-layer support 41.

The workpiece to be coated is placed on the electrode 53 connected to the pulse power source 52 as a cathode. After the plasma is generated by ionization under the action of the pulse electric field, positive ions in the plasma move towards the workpiece to be coated under the action of the pulse electric field so as to be deposited on the surface of the workpiece to be coated. The plasma includes an electrically conductive gaseous medium having both electrons and positive ions of its own.

It is worth mentioning that, because the electrode 53 serving as a cathode is arranged around the workpiece to be coated, positive ions in the plasma can be accelerated to deposit toward the surface of the workpiece to be coated, so that the coating speed of the workpiece to be coated is increased, and the positive ions bombard the surface of the workpiece to be coated during the process, thereby facilitating the strength of the film layer on the surface of the workpiece to be coated.

More specifically, in the present embodiment, the multi-layered bracket 41 includes a plurality of the supporting members 411 and at least two connecting members 412, wherein the supporting members 411 are supported by the connecting members 412 to be held in the reaction chamber 100. In this embodiment, the connecting member 412 is implemented as a column, wherein the column may be hollow or solid.

The entire holder 41 may act as a cathode and be conductively connected to the pulsed power supply 52. That is, the entire holder 41 may be supported by a conductive material, and may be, but is not limited to, a conductive metal. It is understood that the holder 41 may be used as the electrode 53, and the electrode 53 may be disposed on the holder 41. That is, in some embodiments of the present invention, the electrode 53 and the support 41 may be independent of each other, such as but not limited to the electrode 53 being held below or above or to the side of the support 411 of the support 41.

The holder 41 is located in the reaction chamber 10 and held in the reaction chamber 100. In this example, the holder 41 is supported to the reaction chamber 10, and when the holder 41 is applied with a high voltage from the pulse power source 52 to serve as a cathode, the reaction chamber 10 may serve as an anode and be grounded.

The supporting device 40 of the coating apparatus 1 further comprises an insulating member 42, wherein the insulating member 42 can be disposed at the bottom end of the connecting member 412 to isolate the multi-layer support 41 from the reaction chamber 10. The insulating member 42 may be made of, but is not limited to, tetrafluoroethylene.

It should be noted that the supporting member 411 and the inner wall of the reaction chamber 10 need to be maintained at a predetermined distance to avoid the influence on the coating effect, and therefore the height of the insulating member 42 and the height of the connecting member 412 need to be designed in advance.

It should be noted that the support 411 supports the workpiece to be coated, and positive ions in the plasma are accelerated from top to bottom toward the workpiece to be coated under the action of the pulsed electric field to be deposited on the surface of the workpiece to be coated. In this embodiment, the workpiece to be coated is placed on the support 411 in a "lying" manner.

The surface of the workpiece to be coated can be, but is not limited to, the surface to be coated made of glass, plastic, inorganic materials and organic materials. The workpiece to be coated can be an electronic product, an electric appliance part, an electronic assembly semi-finished product, a PCB (printed circuit board), a metal plate, a polytetrafluoroethylene plate or an electronic component, and the coated workpiece to be coated can be exposed to a water environment, a mould environment, an acid and alkaline solvent environment, an acid and alkaline salt mist environment, an acidic atmosphere environment, an organic solvent soaking environment, a cosmetic environment, a sweat environment, a cold and hot circulation impact environment or a damp and hot alternation environment.

When the workpiece to be coated is an electronic device, the workpiece to be coated is exemplified by but not limited to a mobile phone, a tablet computer, an electronic reader, a wearable device, a display, and the like. After a layer of coating film is formed on the surface of the workpiece to be coated, another layer of the same or different film layer can be coated by the coating equipment 1. That is, double-layer or multi-layer coating can be performed using the coating apparatus 1. By changing the relevant parameters. For example, the types of the gases supplied by the gas supply unit 20, the vacuum degree of the reaction chamber 100, the voltage level, etc. can realize that different films can be prepared for the same workpiece to be coated in the same coating apparatus 1.

The reaction chamber 10 may be made of an electrically conductive material, and may be, but is not limited to, an electrically conductive metal, such as a stainless steel material. The whole reaction chamber 10 may be made of a conductive material, or a part of the reaction chamber 10 required to be used as an anode may be made of a conductive material, and the other part may be made of a non-conductive material. The reaction chamber 10 is made of stainless steel, and optionally, the roughness of the inner surface of the reaction chamber 10 is less than 0.10 micrometers.

Further, the supporting members 411 of the multi-layered bracket 41 may be made of an electrically conductive material, the connecting members 412 are also made of an electrically conductive material, each of the supporting members 411 are electrically connected to each other through the connecting members 412, and the electrical connection between the multi-layered bracket 41 and the pulse power source 52 only needs one conducting position. The supporting members 411 of the multi-layered bracket 41 may be made of a conductive material, the connecting members 412 may be made of an insulating material, each of the supporting members 411 is insulated from each other, and the conduction between the multi-layered bracket 41 and the pulse power source 52 requires a plurality of conducting positions. The multilayer support 41 may be a mixture of the above two methods, for example, at least two layers of the multilayer support 41 are conducted with each other, and at least one layer is independently conducted with the pulse power source 52.

In the present embodiment, the entire multilayer support 41 is conductive and can function as a cathode. In other embodiments of the present invention, one or more layers of the entire multi-layer stent 41 serve as the cathode connected to the pulse power source 52.

Further, when the rf power source 51 discharges by electrodeless, the rf electric field may be distributed in the reaction chamber 100. For example, over the workpiece to be coated. The gas supplied by the gas supply part 20 after being ionized above the workpiece to be coated can move towards the workpiece to be coated from top to bottom under the action of the support 411 as a cathode to be deposited on the surface of the workpiece to be coated.

The radio frequency electric field can also be distributed around the workpiece to be coated. The gas supplied by the gas supply part 20 after being ionized around the workpiece to be coated can move towards the workpiece to be coated under the action of the support 411 as a cathode to be deposited on the surface of the workpiece to be coated.

The radio frequency power supply 51 can also discharge by means of an electrode 53, and the electrode 53 connected to the radio frequency power supply 51 can be arranged above the workpiece to be coated or below the workpiece to be coated. At least a part of the gas supplied by the gas supply section 20 is ionized in the vicinity of the electrode 53 conducted to the radio frequency power supply 51 to generate the plasma, and positive ions in the plasma move toward the workpiece to be coated under the action of the pulsed electric field.

It is noted that the gas supply 20 may be arranged in cooperation with the radio frequency electric field so that the gas can be ionized uniformly in the radio frequency electric field.

For example, when the rf power source 51 discharges over the workpiece to be coated, a gas outlet 201 of the gas supply portion 20 is located above the workpiece to be coated, so that the gas from the feeding device can leave the gas outlet 201, be ionized in the rf electric field above the workpiece to be coated, and then move towards the workpiece to be coated from top to bottom under the action of the pulsed electric field. Preferably, the radio frequency electric field is uniformly arranged above the workpiece to be coated on each layer, and the air outlets 201 are uniformly arranged above the workpiece to be coated on each layer.

When the rf power source 51 discharges around the workpiece to be coated, the gas supply unit 20 may also be disposed around the workpiece to be coated, so that the gas from the feeding device may leave the gas outlet 201, be ionized in the rf electric field around the workpiece to be coated, and then move towards the surrounding workpiece to be coated under the action of the pulsed electric field. Preferably, the radio frequency electric field is uniformly arranged around the workpiece to be coated, and the air outlets 201 are uniformly arranged around the workpiece to be coated of each layer.

Further, the coating apparatus 1 includes a feeding device 60, wherein the feeding device 60 is connected to the reaction chamber 10 in a manner capable of communicating with the reaction chamber 100. The feeding device 60 is located outside the reaction chamber 10 for feeding. The raw material may enter the feeding device 60 in a gas or liquid manner, and then be transferred to the gas supply part 20 of the reaction chamber 100 located in the reaction chamber 10 through the feeding device 60, and be released to the reaction chamber 100 at a predetermined position through the gas supply part 20. The flow and rate of the gas, and thus the rate of reaction, can be controlled by controlling the feed device 60.

The reaction chamber 10 comprises a top plate 11, a bottom plate 12, a front plate 13, a back plate 14 and two side plates 15, wherein the top plate 11 and the bottom plate 12 are oppositely disposed, the front plate 13 and the back plate 14 are oppositely disposed, the two side plates 15 are oppositely disposed, each side plate 15 is respectively connected to the top plate 11 and the bottom plate 12, and each side plate 15 is respectively connected to the front plate 13 and the back plate 14.

The top plate 11, the bottom plate 12, the front plate 13, the rear plate 14, and the side plates 15 are closely coupled so that the reaction chamber 100 may form a relatively closed space, thereby enabling precise control of the degree of vacuum of the reaction chamber 100.

The reaction chamber 10 further comprises a control door 16 and a reaction chamber 17, wherein the control door 16 is openably or closably connected to the reaction chamber 17. When the control door 16 is opened, the reaction chamber 100 is exposed, and when the control door 16 is closed, the reaction chamber 100 is closed.

The control door 16 may be the front plate 13. That is, the reaction chamber 10 may be opened from the front side. The control door 16 may be the top plate 11. That is, the reaction chamber 10 may also be opened from the top side. It should be understood by those skilled in the art that the form of opening the reaction chamber 10 is merely illustrative, and the manner of opening the reaction chamber 10 of the coating apparatus 1 of the present invention is not limited thereto.

In this embodiment, the reaction chamber 10 is configured as a rectangular structure, and the front plate 13 of the reaction chamber 10 is the part of the reaction chamber 10 that the user faces when operating or observing the inside of the reaction chamber 10. In other embodiments of the present invention, the reaction chamber 10 may have a cylindrical structure or a circular structure. It will be understood by those skilled in the art that the present invention is only illustrative, and the shape of the reaction chamber 10 is not limited to the above examples.

Optionally, the reaction chamber 10 comprises a viewing window, wherein the viewing window is disposed on the front plate 13 for a user to view.

In this embodiment, the reaction chamber 10 has a feeding hole 101, wherein the feeding hole 101 may be located on the rear plate 14 of the reaction chamber 10. The feeding device 60 is communicably connected to the feeding port 101. The gas supply part 20 is communicably connected to the feed port 101.

Further, the air exhaust device 30 includes a primary air exhaust unit 31 and a high-level air exhaust unit 32, wherein the primary air exhaust unit 31 and the high-level air exhaust unit 32 are respectively communicably connected to the reaction chamber 10.

The primary pumping unit 31 is used for primary pumping of the reaction chamber 10, and the advanced pumping unit 32 is used for secondary pumping of the reaction chamber 10, for example, the primary pumping unit 31 can perform rough pumping of the gas in the reaction chamber 10, for example, reduce the gas pressure by one or more orders of magnitude. The high-stage pumping unit 32 can pump down the gas in the reaction chamber 10, for example, by reducing the gas pressure to a precise range in the same order of magnitude.

The reaction chamber 10 has at least one pumping hole 102, and the pumping device 30 pumps air from the reaction chamber 10 through the pumping hole 102. It is to be understood that the primary suction unit 31 and the advanced suction unit 32 of the suction device 30 may share one suction opening 102. The primary air-extracting unit 31 and the advanced air-extracting unit 32 of the air-extracting device 30 may be respectively communicated with one of the air-extracting ports 102.

In this embodiment, one of the pumping holes 102 is located in the top plate 11 of the reaction chamber 10, and the other pumping hole 102 is located in the rear plate 14 of the reaction chamber 10. The pumping port 102 of the upper plate 11 of the reaction chamber 10 is connected to the preliminary pumping unit 31. The pumping port 102 of the rear plate 14 of the reaction chamber 10 is communicated with the high-stage pumping unit 32.

The coating apparatus 1 further includes a mounting frame 70, wherein the reaction chamber 10 is supported on the mounting frame 70 to be maintained at a certain height. The primary pumping unit 31 of the pumping device 30 is supported by the mounting frame 70 and held at one side of the reaction chamber 10. The high-stage pumping unit 32 of the pumping device 30 is supported by the mounting frame 70 and held at the back side of the reaction chamber 10.

In this embodiment, the primary pumping unit 31 comprises a rotz pump 311 and a dry pump 312, wherein the Luo Cibeng and the dry pump 312 are respectively connected to the reaction chamber 10 in a communication manner. The Luo Cibeng 311 and the dry pump 312 may be used in combination. The dry pump 312 is positioned above the Luo Cibeng or the lorentz pump 311 is positioned above the dry pump 312, so that the dry pump 312 and the Luo Cibeng are overlapped, thereby facilitating the reduction of the area size of the whole plating apparatus 1.

The multi-layered support 41 of the supporting device 40 is smaller in size than the reaction chamber 100 of the reaction chamber 10 so that the multi-layered support 41 can be received in the reaction chamber 100.

The reaction chamber 10 has an opening, wherein the opening is communicated with the reaction chamber 100, and when the control door 16 is opened, the multi-layer support 41 can be placed in the reaction chamber 100 through the opening. When the coating is finished, the control door 16 is opened, and the mounting frame 70 can be directly taken out of the reaction chamber 100. The workpiece to be coated placed on the multi-layer support 41 can also be taken out together with the multi-layer support 41.

The multi-layer support 41 can be used for placing a plurality of workpieces to be coated, and the reaction chamber 10 is designed to have a predetermined size to accommodate the multi-layer support 41 and the plurality of workpieces to be coated, so that the plurality of workpieces to be coated can be coated at a single time.

Further, in this embodiment, after the air-extracting device 30 controls the degree of vacuum in the reaction chamber 10 within a certain range, the feeding device 60 feeds the gas into the reaction chamber 10, and the discharging device 50 can be powered on to generate an electric field to ionize at least part of the gas in the reaction chamber 100.

For example, the feeding device 60 can input Ar/N to the reaction chamber 10 at a flow rate of 50-500 sccm ₂ /H ₂ /CH ₄ Inputting C toward the reaction chamber 10 at a flow rate of 10-200 sccm ₂ H ₂ /O ₂ And the air extractor 30 can control the vacuum degree of the reaction cavity 10 before coating to be less than 2 x 10 ^-3 Pa. After the coating is started, the coating vacuum degree of the reaction chamber 10 can be kept between 0.1Pa and 20Pa.

The voltage generated by the discharge device 50 during the coating process can be maintained between-300V and-3500V, and the duty ratio: 5-100%, frequency: 20 to 360KHz. The coating time is between about 0.1 hour and about 5 hours. Finally, the thickness of the obtained coating film is not more than 50nm. Of course, the thickness of the plating film may become thicker as the plating time is longer.

It is worth mentioning that a transparent coating can be obtained by the coating device 1.

In more detail, in some embodiments of the present invention, an inorganic film layer, such as a diamond-like film layer, may be obtained by using the coating apparatus 1. By way of example, C _x H _y The flow rate is 50-1000sccm, the inert gas flow rate is 10-200 sccm, H ₂ The gas flow is 0-100 sccm, the pressure of the vacuum reaction cavity 100 is 0.01 Pa-100 Pa, the radio frequency power is 10-800W, the bias power voltage is-100V-5000V, the duty ratio is 10-80%, and the coating time is 5-300min.

The flow ratio among different gases determines the atomic ratio of the obtained DLC film, which affects the film quality, the size of the power supply of the discharge device 50 determines the temperature rise, ionization rate, deposition rate and other relevant parameters in the ionization process, the film is thin due to too short film coating time, the hardness performance is poor, and the film is thick due to too long film coating time, which affects the transparency.

In other embodiments of the present invention, the organic film layer can be obtained by using the coating apparatus 1, for example, the following step i or step ii is performed at least once to prepare the organic silicon nano coating layer with modulated structure on the surface of the substrate: step I: introducing monomer A steam into the reaction cavity 10 until the vacuum degree is 30-300 mTorr, starting plasma discharge, performing chemical vapor deposition, stopping introducing the monomer A steam, introducing the monomer B steam, continuing the plasma discharge, performing the chemical vapor deposition, and stopping introducing the monomer B steam; step II: introducing the steam of the monomer B into the reaction cavity 10 until the vacuum degree is 30-300 mTorr, starting plasma discharge, performing chemical vapor deposition, stopping introducing the steam of the monomer B, introducing the steam of the monomer A, continuing the plasma discharge, performing the chemical vapor deposition, and stopping introducing the steam of the monomer A.

The reaction cavity 10 in the step (1) can be a rotating body-shaped cavity or a cubic cavity, the volume of the reaction cavity is 50-1000L, the temperature of the reaction cavity 10 is controlled at 30-60 ℃, and the inert gas is introduced at a flow rate of 5-300 sccm. In the step (2): and (3) carrying out plasma discharge and carrying out chemical vapor deposition, wherein the plasma discharge process in the deposition process comprises low-power continuous discharge, pulse discharge or periodic alternating discharge. The plasma discharge process in the deposition process is low-power continuous discharge, and specifically comprises the following deposition processes at least once: the deposition process comprises a pretreatment stage and a coating stage, wherein the plasma discharge power of the pretreatment stage is 150-600W, the continuous discharge time is 60-450 s, then the coating stage is carried out, the plasma discharge power is adjusted to be 10-150W, and the continuous discharge time is 600-3600 s. The plasma discharge process in the deposition process is pulse discharge, and specifically comprises at least one time of the following deposition processes: the deposition process comprises a pretreatment stage and a coating stage, wherein the plasma discharge power of the pretreatment stage is 150-7600W, the continuous discharge time is 60-450 s, then the coating stage is started, the coating stage is pulse discharge, the power is 10-300W, the time is 600-3600 s, the frequency of the pulse discharge is 1-1000Hz, and the duty ratio of the pulse is 5-90%.

The plasma discharge process in the deposition process is periodic alternating discharge, and specifically comprises the following deposition processes at least once: the deposition process comprises a pretreatment stage and a coating stage, wherein the plasma discharge power of the pretreatment stage is 150-600W, the continuous discharge time is 60-450 s, then the coating stage is started, the plasma of the coating stage is periodically and alternately changed and discharged, the power is 10-300W, the time is 600 s-3600 s, the alternating frequency is 1-1000Hz, and the plasma periodically and alternately changed and discharged output waveform is a sawtooth waveform, a sine waveform, a square waveform, a full-wave rectification waveform or a half-wave rectification waveform.

Further, the power source of the discharging device 50 may be the pulse power source 52 and/or the radio frequency power source 51. The pulse power source 52 can be used alone, the radio frequency power source 51 can also be used alone, or the pulse power source 52 can be used in combination with other devices, such as microwave or radio frequency, or the radio frequency power source 51 can be used in combination with other devices, such as microwave or pulse.

In this embodiment, the rf power source 51 and the pulse power source 52 in the discharge device 50 are used together, for example, the rf power source 51 is used as a power supply of an inductively coupled ion source, and then an alternating magnetic field is generated by the inductive coupling of a coil, so as to realize gas power. The power of the radio frequency power supply 51 may be 12MHz to 14MHz, for example, 13.56MHz.

The pulse power source 52 may be applied to the electrode 53 as a cathode to ionize the gas by glow discharge effect and to have a directional drawing acceleration effect on positive ions generated by ionization. Has bombardment effect in the film deposition process, thereby obtaining compact high-hardness film coating.

The simultaneous application of the radio frequency power supply 51 and the pulse power supply 52 increases the energy of the plasma reaching the surface of the substrate on the basis of obtaining the plasma with high ionization rate in the reaction process, thereby being beneficial to obtaining a compact and transparent film layer.

For example, according to at least one embodiment of the present invention, with the coating apparatus 1, a DLC film layer can be obtained, and first, the surface of a workpiece to be coated is cleaned and pretreated. Cleaning the surface of a workpiece to be coated made of glass, metal, plastic and other materials by using solvents such as alcohol or acetone, wiping the workpiece by using dust-free cloth or wiping the workpiece to be coated after ultrasonic soaking; placing a workpiece to be coated in a vacuum reaction chamber, vacuumizing to below 10Pa, preferably to below 0.1Pa, introducing high-purity helium or argon as a plasma gas source, turning on a high-voltage pulse power supply 52, generating plasma by glow discharge, and etching and activating the surface of the sample; a DLC film is then deposited. Preparing the doped diamond-like carbon film by using a radio frequency and high-voltage pulse co-assisted plasma chemical vapor deposition method: introducing a DLC film reaction gas source, a doped element reaction raw material and hydrogen, starting the radio frequency power supply 51 and the high-voltage pulse power supply 52 to perform plasma chemical vapor deposition, after a period of time, finishing the film deposition process, introducing air or inert gas to return the vacuum cavity to normal pressure, and taking out a sample.

It is noted that the magnitude of the negative bias of the pulsed power supply 52 may be related to the gas ionization conditions and the ability to migrate when reaching the surface of the product. High voltage means higher energy and high hardness coatings can be obtained. However, too high ion energy may generate a strong bombardment effect on the workpiece to be coated, and a bombardment pit may be generated on the surface of the workpiece to be coated on a microscopic scale, and at the same time, high energy bombardment may accelerate temperature rise, possibly resulting in rise of the workpiece to be coated.

Further, in the present embodiment, the pulse frequency of the pulse power source 52 may be 20 to 300KHz, which can reduce the charge accumulation on the surface of the insulated workpiece to be coated, thereby suppressing the large arc phenomenon and increasing the coating deposition thickness limit.

It is noted that, when the coating device 1 is used for coating, the whole coating process can be kept in a low temperature state, 25 ℃ to 100 ℃, for example, 40 ℃ to 50 ℃ through controlling various parameters. Referring to fig. 4, and to fig. 1 to 3, another embodiment of the plating device 1, which is the above preferred embodiment of the present invention, is illustrated.

The present embodiment differs from the above described embodiments mainly in the electrode arrangement and the support means 40. In the above embodiment, the supporting device 40 is independent from the reaction chamber 10 and the multi-layer support 41 can be used as an electrode conducted to the pulse power source 52.

In the present embodiment, the multilayer holder 41 can be used not only as an electrode but also as at least a part of the gas supply unit 20.

Specifically, in the present embodiment, a part of the support 411 is used as the electrode 53 conducted to the pulse power source 52, and a part of the support 411 may be used as the gas supply portion 20.

For example, if the number of the supporting members 411 of the multi-layered bracket 41 is 6, from top to bottom, the first layer to the sixth layer, the first layer, the third layer and the fifth layer can be supplied with gas, and the second layer, the fourth layer and the sixth layer are conducted to the pulse power source 52 to be used as cathodes.

The support members 411 at the first, third and fifth layers have at least one of the air outlets 201, and the air outlets 201 are arranged toward the support members 411 at the next layer. The supporting members 411 of the second layer, the fourth layer and the sixth layer are used for placing the workpiece to be coated.

Preferably, the number of the gas outlets 201 of each of the supporting members 411 is plural, and the gas outlets 201 are uniformly distributed above the workpiece to be coated, so as to facilitate uniform gas supply to the workpiece to be coated.

The support member 411 for supplying gas is provided to be hollow, and the gas from the feeding device 60 can enter into the support member 411 and diffuse toward the support member 411 located at the lower layer through the gas outlet 201.

It is worth mentioning that the support 411 for supplying gas is arranged to be electrically conductive and conductively connected to the rf power supply 51, when the rf power supply 51 is energized, at least part of the gas in the support 411 of the first, third and fifth layers can be ionized in the rf electric field to form plasma, then leave the support 411 through the gas outlet 201 to move towards the workpiece to be coated under the action of the pulsed electric field, and can be accelerated to deposit on the surface of the workpiece to be coated. Optionally, the support 411 as at least a part of the gas supply part 20 has an area size ranging from 500mm to 700mm.

The supporting device 40 includes a plurality of reaction spaces 410, wherein the reaction spaces 410 are formed between adjacent ones of the supporting members 411. Alternatively, according to at least one embodiment of the present invention, the distance between the adjacent supporting members 411 is 10mm to 200mm. The diameter range of the air outlet 201 is 3 mm-5 mm.

For the workpiece to be coated located in the same reaction space 410, for example, the workpiece to be coated located in the second layer, positive ions can be uniformly provided at the position of the support 411 of the first layer above the workpiece to be coated, and the positive ions can uniformly move toward the workpiece to be coated located in the second layer. The method is similar to the method for coating the workpiece to be coated on the fourth layer or the sixth layer.

On the other hand, the radio frequency electric field and the pulse electric field are alternately arranged, so that the uniformity of the electric field of each layer of the workpiece to be coated is favorably ensured.

Preferably, each of the supporting members 411, which is at least a part of the gas supply part 20, is the same, and each of the supporting members 411, which is conducted to the pulse power source 52, is the same.

Alternatively, the distance between the support 411 as the gas supply part 20 and the support 411 as the electrode of the pulse power source 52 of the next layer is the same. That is, the size of each of the reaction spaces 410 may be the same. Optionally, each of the supporting members 411 is parallel to each other. Optionally, the reaction chamber 10 is a symmetrical structure, such as a rectangular structure, or a cylindrical structure. The supporting device 40 is located at the central axis of the reaction chamber 10.

Further, the area of the support 411 as the gas supply part 20 and the area of the support 411 as the electrode of the pulse power source 52 of the next layer may be the same.

It will be appreciated that the adjacent supports 411 are connected to the rf power source 51 and the pulsed power source 52, respectively. The adjacent supporting members 411 are insulated, for example, the supporting members 411 of the first layer, the third layer and the fifth layer are respectively and insulatively mounted on the connecting member 412, and the first layer, the third layer and the fifth layer are respectively and conductively connected to the rf power source 51. The supporting members 411 of the second, fourth and sixth layers are respectively mounted to the connecting members 412 in an insulated manner. The supporting members 411 of the second, fourth and sixth floors are respectively conductively connected to the pulse power source 52. Alternatively, the first layer, the third layer and the fifth layer may be respectively conductively connected to the connecting part 412 to be conductively connected to the rf power source 51. The second layer, the fourth layer, and the sixth layer are respectively conductively connected to the pulse power source 52 and insulated from the connection 412.

It will be understood by those skilled in the art that the connections between the various layers of the stent 41 and the pulsed power supply 52 or the radio frequency power supply 51 described above are by way of example only.

Further, it is understood that the electrode 53, which is conducted to the pulse power source 52, may be separately provided to the support 41, and is located below the support 411 on which the workpiece to be coated is placed.

Referring to fig. 5, and to fig. 1 to 3, another embodiment of the plating apparatus 1, which is the above preferred embodiment of the present invention, is illustrated. The present embodiment is different from the above embodiments mainly in the supporting means 40 and the discharging means 50.

In the present embodiment, a portion of the holder 41 of the supporting device 40 may be regarded as the gas supply part 20.

Specifically, the support 411 of the bracket 41 includes a first support portion 4111 and a second support portion 4112, wherein the first support portion 4111 is disposed on the second support portion 4112 and the first support portion 4111 is supported on the second support portion 4112.

Each of the first support 4111 and the corresponding second support 4112 serves as a layer, the first support 4111 is conductively connected to the pulse power source 52 to serve as a cathode, and the second support 4112 serves as the gas supply unit 20.

For example, when the number of the supporting members 411 of the bracket 41 is at least two, for the workpiece to be coated placed on the supporting member 411 of the second layer, the second supporting portion 4112 of the supporting member 411 of the first layer is above the workpiece to be coated, and the workpiece to be coated is supported on the first supporting portion 4111 of the supporting member 411 of the second layer.

When the second support portion 4112 of the support 411 in the first layer is supplied with gas and the gas is ionized into plasma under the action of the rf electric field, the plasma above the workpiece to be coated moves from top to bottom towards the workpiece to be coated on the support 411 in the second layer under the action of the pulsed electric field generated by the first support portion 4111 of the support 411 in the second layer, so as to accelerate deposition on the surface of the workpiece to be coated.

Further, the second support 4112 of the support 411 of the first layer may be conductively connected to the rf power source 51, so that the gas may be ionized directly under the rf electric field in the vicinity of the second support 4112 of the support 411 of the first layer.

It should be noted that, since each of the supporting members 411 includes the first supporting portion 4111 and the second supporting portion 4112, most of the supporting members 411 of the rack 41 can be placed with the workpiece to be coated. In other words, the support 411 of each layer of the rack 41 may be placed with the workpiece to be coated, and the second support 4112 for supplying gas may be provided above the workpieces to be coated of other layers except the first layer of the support 411, and the first support 4111, which is a cathode, may be provided below the supports 411.

Further, the second supporting portion 4112 may be hollow and have a plurality of air outlets 201, wherein the air outlets 201 are uniformly arranged above the workpiece to be coated to facilitate uniform air outlet for the workpiece to be coated.

The longitudinal section of the air outlet position of the second support 4112 may be rectangular or trapezoidal.

The first support 4111 for the electrode 53 may have a plate-shaped structure, and the second support 4112 for the gas supply unit 20 may have a plate-shaped structure, a mesh structure, or a hollow structure.

More specifically, the second support portion 4112 may include a support top plate 41121 and a support bottom plate 41122, and a space is reserved between the support top plate 41121 and the support bottom plate 41122 of the second support portion 4112 for temporary storage of gas. The top support plate 41121 and the bottom support plate 41122 of the second support 4112 may be insulated from each other, and the top support plate 41121 and the bottom support plate 41122 may be used as the discharge electrode 53 of the rf power supply 51.

The first supporting portion 4111 is disposed on the top supporting plate 41121 of the second supporting portion 4112 in an insulated manner, and the first supporting portion 4111 is used as a discharge electrode 53 of the pulse power supply 52. Referring to fig. 6, and to fig. 1 to 3, another embodiment of the plating device 1, which is the above preferred embodiment of the present invention, is illustrated.

The present embodiment is different from the above embodiments mainly in the supporting means 40 and the discharging means 50.

The supporting pieces 411 of the holder 41 are respectively conductively connected to the pulse power source 52, and the adjacent supporting pieces 411 are respectively used as the anode and the cathode of the pulse power source 52. That is, the reaction chamber 10 need not be used as the anode in this embodiment.

For example, the stent 41 has at least six layers, wherein the first layer, the third layer and the fifth layer are respectively used as the anode of the pulse power source 52, and the second layer, the fourth layer and the sixth layer are respectively used as the cathode of the pulse power source 52.

The workpiece to be coated is placed on the second layer, the fourth layer and the sixth layer, and positive ions in plasma generated by ionization in the radio frequency electric field can move towards the position of the workpiece to be coated.

It should be noted that the adjacent supporting members 411 are insulated from each other, for example, the insulating member 42 may be disposed between the supporting member 411 of the first layer and the supporting member 411 of the second layer, so that the adjacent supporting members 411 cannot be conducted with each other.

According to further embodiments of the present invention, when at least a portion of the supporting member 411 of the cradle 41 is conductively connected to the pulse power source 52 to serve as a cathode of the pulse power source 52, at least a portion of the supporting member 411 of the cradle 41 may be set to be grounded, and the supporting member 411 serving as the cathode of the pulse power source 52 and the grounded supporting member 411 may be alternately disposed.

According to further embodiments of the present invention, when at least a portion of the supporting member 411 of the bracket 41 is conductively connected to the pulsed power source 52 to serve as a cathode of the pulsed power source 52, at least a portion of the supporting member 411 of the bracket 41 is conductively connected to the radio frequency power source 51 to serve as an anode of the radio frequency power source 51, and the supporting member 411 serving as the cathode of the pulsed power source 52 and the supporting member 411 serving as the anode of the radio frequency power source 51 may be alternately disposed. Referring to fig. 7, and to fig. 1 to 3, another embodiment of the coating apparatus 1, which is the above preferred embodiment of the present invention, is illustrated.

The present embodiment is different from the above embodiments mainly in the supporting member 411 of the bracket 41.

The support 411 of the holder 41 is supported on the inner wall of the reaction chamber 10. The inner wall of the reaction chamber 10 may be concave, and each of the supporting members 411 may be supported on the reaction chamber 10.

The supporting member 411 may serve as an electrode 53 of the pulse power source 52, the whole of the bracket 41 may serve as a cathode of the pulse power source 52, or a part of the supporting member 411 may serve as a cathode of the pulse power source 52, and a part of the supporting member 411 may serve as an anode of the pulse unit. It is also possible that a part of the support 411 functions as the electrode 53 of the radio frequency power supply 51. The gas supply part 20 may be disposed at the support 411.

It is to be understood that the above-mentioned arrangement of the electrodes 53 is an example, and the arrangement of the electrodes 53 of the plating apparatus 1 of the present invention is not limited thereto.

Further, the supporting member 411 is detachably connected to the reaction chamber 10, and when the workpiece to be coated needs to be placed or taken out, the supporting member 411 can be separated from the reaction chamber 10.

According to other embodiments of the present invention, the supporting device 40 is rotatably installed to the reaction chamber 10. That is, the support device 40 and the reaction chamber 10 can move relative to each other to facilitate sufficient contact between the rf electric field or the pulsed electric field and the gas or plasma.

It should be noted that, in the above embodiment, the support 411 supports the workpiece to be coated so that the workpiece to be coated is laid on the reaction chamber 100, so that the upward front surface or the downward back surface of the workpiece to be coated can be coated. By using the coating equipment 1, double-sided coating can be realized.

In other embodiments of the present invention, the workpiece to be coated is held in the reaction chamber 100 in an upright manner, and the supporting member 411 is erected from the reaction chamber 100.

Referring to FIG. 8, the holder 41 includes a plurality of the supporting members 411 and at least one connecting member 412, wherein the supporting members 411 are spaced apart from each other by a predetermined distance and held in the reaction chamber 100, and the connecting member 412 connects each of the supporting members 411 to hold the supporting members 411 at predetermined positions. The number of the connecting members 412 may be two or more.

In this embodiment, the supporting member 411 is implemented as a rectangular plate, and the number of the connecting members 412 may be four, respectively located at four corners of the supporting member 411.

The holder 41 is held in the reaction chamber 100 while being insulated from the reaction chamber 10, wherein the entire holder 41 can be used as a cathode of the pulse power source 52.

It is noted that the support member 411 is formed with a plurality of the gas outlets 201, wherein the raw material gas or the ionized plasma may pass through the support member 411 to be diffused throughout the support 41.

It will be appreciated by persons skilled in the art that the embodiments of the invention described above and shown in the drawings are given by way of example only and are not limiting of the invention. The objects of the invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.

Claims

1. A coating equipment for coating at least one workpiece to be coated is characterized by comprising:

a gas supply part for supplying a gas to the reaction chamber;

the gas pumping device is connected to the reaction cavity body in a way of being communicated with the reaction cavity body and is used for pumping gas in the reaction cavity body so as to control the vacuum degree; and

the pulsed power supply is used for providing a pulsed electric field to the reaction cavity, a plurality of workpieces to be coated are kept in the reaction cavity, when the pulsed power supply is connected, gas in the reaction cavity is ionized under the action of the pulsed electric field to generate plasma, and the plasma is deposited towards the surface of the coated workpiece;

the radio frequency power supply is used for providing a radio frequency electric field for the reaction cavity, and when the radio frequency power supply is switched on, plasma is deposited towards the surface of the workpiece to be coated under the action of the pulse electric field and the radio frequency electric field;

a multi-layered support including a plurality of support members, the support members including a first support portion and a second support portion, the first support portion being insulatively supported to the second support portion, each of the first support portion and the corresponding second support portion being one layer, the first support portion being used as a discharge electrode of the pulse power supply, the workpiece to be coated being supported to the first support portion;

the second supporting part comprises a supporting top plate and a supporting bottom plate, a reserved space is reserved between the supporting top plate and the supporting bottom plate to allow gas to be temporarily reserved, the supporting top plate and the supporting bottom plate are insulated, the supporting bottom plate is provided with at least one gas outlet so that gas can escape from the position above the workpiece to be coated, and the supporting top plate and the supporting bottom plate are used as discharge electrodes of the radio frequency power supply.

2. The plating device according to claim 1, wherein the first support is a cathode of the pulse power supply.

3. The plating device according to claim 1, wherein the first support section is an anode of the pulse power supply, and is provided in the reaction chamber.

4. The plating device according to claim 1, wherein the support member is held in the reaction chamber at a predetermined interval, and a plurality of the workpieces to be plated are respectively supported by the support member.

5. The plating apparatus according to claim 3, wherein a plurality of the workpieces to be plated are respectively supported by the support members.

6. The plating apparatus according to claim 1, wherein an electrode as the radio frequency power source is located above the workpiece to be plated and the workpiece to be plated is supported on the support as a cathode of the pulse power source.

7. The plating device according to claim 1, wherein the support as an anode of the pulse power source is located above the workpiece to be plated and the workpiece to be plated is supported on the support as a cathode of the pulse power source.

8. The plating device according to claim 1, wherein the gas outlet is arranged uniformly above the plating workpiece.

9. The plating device according to claim 1, wherein the holder is entirely removably placed in the reaction chamber, the holder further comprising at least two posts, wherein each of the support members is disposed on the posts with a predetermined interval therebetween.

10. The plating device according to claim 9, wherein the holder further comprises at least one insulating member, wherein the insulating member is provided at a bottom end of the pillar to insulate the holder from the reaction chamber.

11. The plating device according to claim 1, wherein the holder is detachably supported to the reaction chamber.

12. The plating apparatus according to claim 11, wherein each of the supports is mounted in parallel to each other in the reaction chamber.

13. The plating device according to claim 1, wherein a plating voltage of the pulse power supply is controlled to-300V to-3500V, and a frequency of the pulse power supply is 20KHz to 360KHz.

14. The plating device according to claim 1, wherein a duty ratio of the pulse power source is set to 5% to 100%.

15. The plating device according to claim 1, wherein a degree of vacuum of the plating device before plating is controlled to be not more than 2 x 10 ^-3 Pa。

16. The plating device according to claim 1, wherein a degree of vacuum of the plating device during plating is set to 0.1 to 20Pa.