CN110965040B

CN110965040B - Coating equipment for preparing DLC (diamond-like carbon) and application thereof

Info

Publication number: CN110965040B
Application number: CN201911325608.0A
Authority: CN
Inventors: 宗坚; 张琳; 代莹静
Original assignee: Jiangsu Favored Nanotechnology Co Ltd
Current assignee: Jiangsu Favored Nanotechnology Co Ltd
Priority date: 2019-12-04
Filing date: 2019-12-20
Publication date: 2021-04-16
Anticipated expiration: 2039-12-20
Also published as: WO2021109377A1; CN110965040A

Abstract

The invention provides a coating device for preparing DLC and application thereof, wherein the coating device comprises a cavity, a group of conveying pipelines, at least one air extractor, at least one air extracting pipeline, a power supply device and at least one electrode support, wherein the cavity is provided with a chamber, the electrode support is arranged in the chamber for supporting the substrate, the conveying pipelines are communicated with the chamber and are used for introducing gas raw materials into the chamber, the air extractor is communicated with the chamber through the air extracting pipeline and performs negative pressure operation on the chamber and controls the air pressure in the chamber, and the power supply device is electrically connected with the electrode support so that the coating device can prepare the DLC film on the surface of the substrate in a chemical vapor deposition mode.

Description

Coating equipment for preparing DLC (diamond-like carbon) and application thereof

Technical Field

The invention relates to the field of coating, and further relates to coating equipment for preparing DLC and application thereof.

Background

Diamond Like Carbon film (DLC) is a recently emerging sp-type film³And sp²The metastable material generated by the combination of the bond forms is a film or a film layer with short-range order and long-range disorder. It has both the excellent characteristics of diamond and graphite. In the aspect of mechanical property, DLC has higher hardness and wear resistance, and the hardness related to components can be changed from 20GPa to 80 GPa; in the aspect of optical performance, DLC has good light transmission and anti-reflection function; DLC also has good thermal conductivity and biocompatibility. For example, the wear resistance and hardness of glass, ceramics, etc. can be further improved by plating a DLC film on the surface of the glass, ceramics, etc. For example, the DLC is deposited on the surface of the plastic, and can also play a role in improving the wear resistance and hardness of the surface of the plastic.

The current methods for producing DLC films can be classified into Chemical Vapor Deposition (CVD) methods and Physical Vapor Deposition (PVD) methods. Chemical vapor deposition is a deposition process which utilizes the principle of chemical reaction to precipitate solid-phase substances from gas-phase substances and deposit the solid-phase substances on a working surface to form a coating film. From the point of view of the deposition conditions, a certain activation energy is necessary during the deposition reaction in order to achieve a chemical reaction at the interface of the gas and the substrate. According to different activation modes, the method can be divided into hot wire chemical vapor deposition, laser chemical vapor deposition, plasma enhanced chemical vapor deposition and the like. The physical vapor deposition technology is a vapor deposition process carried out under the condition that at least one deposition element is atomized (atomized) under the vacuum condition, and is characterized in that the interfaces of a film layer and a film base can be improved, the deposition rate is high and the like when the film layer and the film base are deposited on various substrates. The physical vapor deposition DLC film has the following specific methods: ion beam deposition, sputter deposition, vacuum cathodic arc deposition, pulsed laser deposition, and the like.

The Plasma Enhanced Chemical Vapor Deposition (PECVD) method has the characteristics of low deposition temperature, good plating winding performance, uniform and compact prepared film and the like, so that the method becomes one of the most common methods for preparing the DLC film. The plasma enhanced chemical vapor deposition method is also called glow discharge method, and the common plasma enhanced chemical vapor deposition techniques include: direct current glow discharge, radio frequency glow discharge, Electron Cyclotron Resonance (ECR) chemical vapor deposition, and the like, and in recent years, a dual radio frequency-direct current glow discharge (RF-DC) method, a microwave-radio frequency (MW-RF) glow discharge method, an electron cyclotron resonance-radio frequency (ECR-RF) method, and the like, which have a high deposition rate and large-area deposition, have appeared. Through a great deal of research, the preparation process of the diamond-like carbon film can be divided into the following four stages: (1) the production process of the original matrix group, namely gas source molecules are decomposed into neutral atoms and groups through inelastic collision with high-energy electrons; (2) a secondary reaction process, namely a chemical reaction process which is generated by collision between neutral atoms and groups or between the neutral atoms and gas source molecules; (3) a transport process, i.e. a process of diffusion of neutral atoms or groups to the surface of the substrate; (4) the surface reaction process, i.e., the reaction of neutral groups with the surface, forms a film.

Patent No. CN205803582U discloses a deposit diamond-like carbon film device, including real empty room, workstation and vacuum system, when using, adopt vacuum system earlier to take out real empty room to the work vacuum, open heating system, open column arc source belt cleaning device and wash the workstation, wash good back, open rectangle plane arc chromium target and carry out the bottom layer, then open rectangle plane arc graphite target deposit diamond-like carbon film. In the coating process, a heating environment needs to be provided, and a graphite target is used as a target material, so that the ionization rate is low, the deposition efficiency is low, and the problems of poor coating quality and high economic cost exist.

The patent No. CN101082118A discloses a method for plating a diamond-like carbon film on the metal surface of high-speed steel, which comprises a, fixing a metal workpiece on a workpiece turntable in a vacuum chamber of arc ion plating equipment and vacuumizing; b. introducing argon into a vacuum chamber, keeping the stability of the vacuum degree, and then starting an ion source to activate the surface of the metal workpiece; c. closing argon, loading negative bias between the metal workpiece and the vacuum chamber, and starting a titanium arc source to deposit a titanium transition layer on the surface of the metal workpiece; d. starting a graphite arc source, setting the initial discharge frequency of the graphite point arc source, and controlling the graphite arc source to properly increase the discharge frequency for each certain discharge pulse number so as to deposit a titanium carbide transition layer on the surface of the metal workpiece; e. and closing the titanium arc source, and controlling the discharge pulse number of the graphite arc source to deposit the diamond-like film on the surface of the metal workpiece. It can be seen that the method takes a graphite arc source as a target material and has the defects of low ionization rate, low deposition efficiency and the like.

Therefore, how to provide a coating device which has a simple structure and low cost and is suitable for preparing high-quality DLC films in a large scale is a problem which needs to be solved at present.

Disclosure of Invention

An object of the present invention is to provide a coating apparatus for DLC production and use thereof, wherein the coating apparatus is used for coating DLC film or film on the surface of a substrate to realize large-area coating, thereby realizing mass production of DLC film.

The invention also aims to provide a coating device for preparing DLC and application thereof, wherein the coating device can etch and activate the surface of a substrate, and is beneficial to preparing the DLC film on the surface of the substrate.

Another object of the present invention is to provide a coating apparatus for DLC production and use thereof, wherein the coating apparatus can complete coating at normal temperature or low temperature, requires a short time, and contributes to cost saving.

The invention also aims to provide a coating device for preparing DLC and application thereof, wherein the coating device can be used for coating some substrates which are not high in temperature resistance, and the substrates are not easy to damage in the coating process.

Another object of the present invention is to provide a coating apparatus for DLC production and applications thereof, wherein the coating apparatus is capable of detecting a reaction temperature in real time, further ensuring the safety of the substrate.

It is another object of the present invention to provide a coating apparatus for DLC film production and use thereof, wherein the coating apparatus realizes production of the DLC film in combination with radio frequency and/or pulse voltage.

The invention also aims to provide the coating equipment for preparing the DLC and the application thereof, wherein the coating equipment has better process controllability in the process of preparing the DLC film and is beneficial to quickly preparing the target DLC film.

Another object of the present invention is to provide a coating apparatus for DLC production and use thereof, wherein the coating apparatus has a simple structure, is easy to clean, and has a long service life.

According to an aspect of the present invention, the present invention further provides a coating apparatus for producing a DLC film on a surface of a substrate, wherein the coating apparatus comprises:

a chamber, wherein the chamber has a cavity;

a set of delivery lines;

at least one air extractor;

at least one air extraction pipeline;

a power supply device; and

and the power supply device is electrically connected to the electrode support so as to enable the coating equipment to prepare the DLC film on the surface of the substrate by means of chemical vapor deposition.

In some embodiments, the chamber has at least one pumping port, at least one gas inlet, and at least one feed port communicating with the chamber, wherein the delivery line comprises at least one gas source line and at least one reactant material line, wherein the pumping port is communicated with the pumping line, wherein the gas source line is communicated with the gas inlet for introducing gas into the chamber, and wherein the reactant material line is communicated with the feed port for charging the chamber with reactant material.

In some embodiments, the hydrogen gas pipe and the reaction material pipe are communicated with the same feed port, or the hydrogen gas pipe and the reaction material pipe are respectively communicated with two feed ports.

In some embodiments, the delivery line further comprises a doped material pipe, wherein the doped material pipe is communicated with the feed port for filling the doped element reaction material into the chamber.

In some embodiments, the pumping port is located in a middle portion of the chamber, wherein the gas inlet and the feed port are located in a sidewall of the chamber.

In some embodiments, the evacuation device comprises at least a first vacuum pump and at least a second vacuum pump, wherein the second vacuum pump operates cooperatively as a backing pump for the first vacuum pump to operate the chamber at a negative pressure through the evacuation line and maintain the pressure within the chamber within a predetermined range.

In some embodiments, the air in the chamber is such that the air pressure in the chamber falls below 0.01 Pa.

In some embodiments, wherein the pressure within the chamber is maintained between 0.01 and 100 Pa.

In some embodiments, wherein the first vacuum pump is implemented as a molecular pump, wherein the second vacuum pump is implemented as a molecular pump comprising a roots pump and a dry pump.

In some embodiments, the coating apparatus further includes a tail gas treatment device, wherein the tail gas treatment device is connected to the pumping line for treating and exhausting the gas pumped by the pumping device.

In some embodiments, the power supply includes a radio frequency power supply and a pulse power supply to provide a radio frequency voltage and the pulse power supply, respectively.

In some embodiments, the power supply comprises a pulsed power supply, wherein the pulsed power supply has a positive terminal and a negative terminal, wherein the negative terminal is electrically connected to the electrode support and provides a negative voltage, wherein the chamber is grounded, and the electrode support is insulated from the chamber.

In some embodiments, the power supply device comprises a pulse power supply, wherein the pulse power supply has a positive terminal and a negative terminal, wherein the electrode holder comprises a plurality of layers of metal plates, wherein the positive terminal and the negative terminal of the pulse power supply are electrically connected to each layer of metal plate of the electrode holder, respectively, and two adjacent metal plates of the electrode holder are positive and negative.

In some embodiments, the power of the RF voltage of the RF power supply is 10-800W.

In some embodiments, the voltage of the pulse bias voltage provided by the pulse power supply is-100V to-5000V, the pulse frequency is 20-300KHz, and the duty ratio is 10% -80%.

In some embodiments, the pulsed power supply is implemented as a unidirectional pulsed power supply, a symmetric bidirectional pulsed power supply, or an asymmetric pulsed power supply.

In some embodiments, the coating apparatus further comprises a housing, wherein the chamber, the conveying pipeline, the air pumping device, the air pumping pipeline and the power supply device are all mounted on the housing.

The invention also provides a DLC film coating method, which prepares the DLC film on the surface of a substrate by using a coating device based on hydrocarbon gas as a reaction raw material, and comprises the following steps:

(a) an electrode holder for placing the substrate in a chamber of the coating apparatus;

(b) performing a negative pressure generating operation on the chamber; and

(c) and preparing the DLC film on the surface of the substrate by chemical vapor deposition.

In some embodiments, the step (c) further comprises the steps of: (c.1) introducing gas into the chamber through a gas source pipeline, and providing voltage to act on the gas in the chamber so as to etch the surface of the substrate; and (c.2) introducing a reaction raw material gas into the chamber through at least one reaction raw material pipeline, and providing voltage to act on the gas in the chamber so as to prepare the DLC film on the surface of the substrate.

In some embodiments, the gas is introduced into the chamber at a gas flow rate of 10sccm to 1000 sccm.

In some embodiments, the electrode holder is connected to a pulsed power supply to provide a pulsed voltage to the gas within the chamber.

In some embodiments, a negative terminal of the pulsed power supply is electrically connected to the electrode holder, the cavity is grounded, and the electrode holder is insulated from the cavity.

In some embodiments, a positive terminal and a negative terminal of the pulse power supply are electrically connected to the plurality of metal plates of the electrode holder, respectively, and two adjacent metal plates of the electrode holder are positive and negative.

In some embodiments, the electrode holder is connected to a pulsed power supply and a radio frequency power supply to provide pulsed voltage and radio frequency voltage to the gas within the chamber.

In some embodiments, wherein the chamber is evacuated in a cooperative manner with a second vacuum pump as a backing pump of a first vacuum pump, wherein the second vacuum pump is implemented to include a dry pump and a roots pump, wherein the first vacuum pump is implemented to be a molecular pump.

Drawings

FIG. 1 is a perspective view schematically showing a coating apparatus according to a preferred embodiment of the present invention.

Fig. 2 is a perspective view of another perspective view of the coating apparatus according to the above preferred embodiment of the present invention.

Fig. 3 is a schematic perspective view of a second vacuum pump of the air suction device of the coating apparatus according to the above preferred embodiment of the present invention.

Fig. 4 is a schematic perspective view of a first vacuum pump of the air suction device of the coating apparatus according to the above preferred embodiment of the present invention.

Fig. 5 is a schematic perspective view of the housing of the plating device according to the above preferred embodiment of the present invention.

Fig. 6 is a block diagram of the coating apparatus according to the above preferred embodiment of the present invention.

FIG. 7 is a block diagram showing the structure of the transfer line of the plating device according to the above preferred embodiment of the present invention.

FIG. 8 is a block diagram showing the structure of an air supply line of the plating device according to the above preferred embodiment of the present invention.

FIG. 9 is a block diagram of the power supply device of the plating device according to the above preferred embodiment of the present invention.

Fig. 10 is a perspective view schematically showing a holder of the coating apparatus according to the above preferred embodiment of the present invention.

Detailed Description

The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.

It will be understood by those skilled in the art that in the present disclosure, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced devices or components must be in a particular orientation, constructed and operated in a particular orientation, and thus the above terms are not to be construed as limiting the present invention.

It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

As shown in fig. 1 to 10, a coating apparatus 100 according to a preferred embodiment of the present invention is provided, wherein the coating apparatus 100 is used for coating at least one DLC film or film layer on at least one substrate 600, and the coating apparatus 100 is capable of realizing large-area coating, thereby realizing simultaneous coating of DLC films on a large number of surfaces of the substrates 600.

In this embodiment, the coating apparatus 100 employs a plasma chemical vapor deposition method to prepare the DLC film or film layer on the surface of the substrate 600. That is, the DLC film is deposited on the surface of the substrate 600, so as to improve the properties of the surface of the substrate 600, such as the mechanical aspect, the optical aspect, or the chemical aspect, wherein the substrate 600 is not limited herein, such as a product to be coated with a preset shape structure, such as a PCB, a mobile phone, an electronic device, an electronic product cover plate, an electronic product display screen, a mobile phone glass screen, a computer screen, a mobile phone rear cover, an electronic device housing, a keyboard film, or other types of products to be coated. For example, the coating apparatus 100 can effectively solve the problems of the electronic product display screen such as falling resistance, wear resistance and high surface strengthening cost by preparing the DLC film on the electronic product display screen.

As shown in fig. 1, 2, 5 and 6, preferably, the coating apparatus 100 includes a chamber 10, a set of conveying pipes 20, at least one air extractor 30, at least one air extracting pipe 40, a power supply device 50 and at least one electrode holder 60, wherein the chamber 10 has a closable chamber 101, wherein the electrode holder 60 is disposed in the chamber 101 of the chamber 10, wherein the electrode holder 60 is used to support the substrate 600, wherein the transfer line 20 is communicated with the chamber 101 of the chamber 10, the conveying pipeline 20 is used for introducing a gas raw material into the chamber 101, where the gas raw material is a plasma source gas of an inert gas such as nitrogen, carbon tetrafluoride or helium, argon, or the like, a reaction gas such as hydrogen, hydrocarbon gas, or the like, or an auxiliary gas of a doping element such as N, Si, F, B, or the like. The gas-extracting device 30 is communicated with the chamber 101 of the chamber 10 through the gas-extracting line 40 and continuously extracts gas in the chamber 101 through the gas-extracting line 40 to control the gas pressure in the chamber 101, wherein the power supply device 50 is used for providing radio frequency and/or pulse voltage to act on the gas in the chamber 101, so that the coating apparatus 100 can prepare the DLC film or film layer on the surface of the substrate 600 by means of chemical vapor deposition.

As shown in fig. 7, further, the chamber 10 has at least one pumping hole 11, at least one gas inlet 12 and at least one material inlet 13, which are communicated with the chamber 101, wherein the conveying pipeline 20 includes at least one gas source pipeline 21, at least one hydrogen pipeline 22 and at least one reactant material pipeline 23, wherein the pumping hole 11 is connected to the pumping pipeline 40 for the pumping device 30 to pump the gas in the chamber 101 through the pumping pipeline 40, wherein the gas inlet 12 is connected to the gas source pipeline 21 for introducing inert gas such as nitrogen, carbon tetrafluoride or helium, argon or plasma source gas into the chamber 101, wherein the material inlet 13 is connected to the hydrogen pipeline 22 and the reactant material pipeline 23, wherein the hydrogen pipeline 22 is used for introducing hydrogen into the chamber 101, and wherein the reactant material pipeline 23 is used for introducing a reactant material such as hydrocarbon gas into the chamber 101, the hydrocarbon gas is one or more combinations of gaseous raw materials such as alkanes, alkenes, alkynes, etc. with 1-6 carbon atoms, or gaseous raw materials vaporized from liquid hydrocarbon raw materials with higher carbon atoms, etc. That is, the reaction material pipe 23 may be used to convey a liquid reaction material, and then introduce the vaporized reaction material into the chamber 101 through the inlet 13.

Further, a window may be disposed on a door of the cavity 10 for a user to observe a film coating condition in the chamber 101. The gas inlet 12 with the feed inlet 13 all locates the lateral wall of cavity 10, wherein the gas inlet 12 with seal connection between the air supply pipeline 21, wherein the feed inlet 13 respectively with seal connection between hydrogen pipeline 22 and the reaction raw material pipeline 23, for example for flange joint such as screw thread, cup joint, buckle.

Further, the two feed ports 13 are implemented, wherein one feed port 13 is used for connecting the hydrogen pipeline 22 for separately feeding hydrogen into the chamber 101, and the other feed port 13 is used for connecting the reaction raw material pipeline 23 for separately feeding reaction raw materials into the chamber 101. Alternatively, the feed opening 13 may be implemented as one, wherein the hydrogen pipe 22 and the reaction material pipe 23 are jointly connected to the same feed opening 13, so as to introduce hydrogen or reaction material into the chamber 101 through the same feed opening 13.

More preferably, the delivery pipe 20 further includes a doped material pipe 24, wherein the doped material pipe 24 is connected to the feeding hole 13 for feeding an auxiliary gas of doping elements such as N, Si, F, B, etc. into the chamber 101. For example, the reaction raw material of the doped Si element includes, but is not limited to, silicon-containing organic compounds, including one or more of organic linear siloxane, cyclosiloxane, alkoxy silane and unsaturated carbon-carbon double bond-containing siloxane. Further, hexamethyldisiloxane, tetramethyldivinyldisiloxane, hexamethylcyclotrisiloxane and octamethylcyclotetrasiloxane are selected. For example, the reaction material of doped N element includes but is not limited to N₂And a nitrogen-containing hydrocarbon. For example, the doped elemental F reaction raw material includes but is not limited to fluorocarbon, and further, is selected from carbon tetrafluoride and tetrafluoroethylene. For example, the doped B element reaction raw material includes, but is not limited to, borane with a boiling point below 300 ℃ at normal pressure, andin one step, pentaborane, hexaborane, and the like are selected.

It is understood that the gas source pipe 21, the hydrogen pipe 22, the reaction material pipe 23, and the doping material pipe 24 can be respectively provided with an on-off valve to respectively control the on-off of the pipes, so as to achieve the circulation and the off-off of the gas, or the on-off valve can control the flow rate of the gas filled in the chamber 101, which is not limited herein.

Alternatively, the doping material pipe 24 may be connected to an additional independent feed port 13 to separately charge the auxiliary gas of the doping element into the chamber 101. Alternatively, the doping raw material pipe 24 may share the same feed port 13 as the hydrogen pipe 22 or the reaction raw material pipe 23 to fill the chamber 101 with gas, etc., respectively.

It is worth mentioning that, in the preparation of the DLC film, the atomic ratio of the content of the doping element in the DLC film is preferably less than 10%, the content of the doping element in the DLC film prepared by the plating apparatus 100 is less than 40%, and the DLC film thickness is preferably 10 to 800 nm. It is well known to those skilled in the art that the doping content of Si, Cu, N, F, Al, etc. should not be too high, and these doping elements will generate bonding with the carbon element in the DLC, destroy the original microstructure of the DLC, change the growth mode during deposition, and when the content of the doping elements is further increased, phase separation may occur or the diamond-like structure in the DLC may be completely changed, so that the DLC film loses the wear-resistant, high hardness properties. In addition, according to different coating process requirements, the doping element reaction gas source can also increase the ionization rate of the carbon-containing gas source, thereby being beneficial to realizing coating.

In the present embodiment, the pumping hole 11 is provided at a central position of the chamber 101 of the chamber 10, wherein the gas inlet 12 and the gas inlet 13 are both provided at a side wall position of the chamber 101 of the chamber 10, so that gas is pumped from the gas inlet 12 and the gas inlet 13 at the side wall of the chamber 101, and is pumped out from the pumping hole 11 at the central position of the chamber 101, so as to ensure that the pumped gas is diffused as uniformly as possible to the surface of each of the substrates 600, thereby coating the surface of each of the substrates 600 with the DLC film as uniformly as possible.

Alternatively, the pumping hole 11 may be disposed in the middle of the bottom wall or the top wall of the chamber 101, and the pumping hole 11 may also be communicated with a pumping column disposed in the middle of the chamber 101, wherein the gas inlet 12 and the feed inlet 13 may be located on the same side wall of the chamber 101, or may be located on different side walls of the chamber 101, respectively. Alternatively, the pumping hole 11 may be disposed at a side wall position of the chamber 101, and the gas inlet 12 and the feed port 13 may be disposed at a middle position of the chamber 101 or a side wall position opposite to the pumping hole 11, and the like, without being limited thereto.

It is understood that the relative positions of the pumping hole 11, the gas inlet 12 and the feed hole 13 in the chamber 101 can be preset according to actual requirements, so as to meet the requirement of uniformly coating the substrate in large batch as much as possible, thereby ensuring the specification uniformity.

As shown in fig. 3 and 4, preferably, the gas-pumping device 30 includes at least a first vacuum pump 31 and at least a second vacuum pump 32, wherein the first vacuum pump 31 and the second vacuum pump 32 are respectively connected to the pumping port 11 through the pumping line 40, and the second vacuum pump 32 is used as a backing pump of the first vacuum pump 31 to cooperatively perform a negative pressure operation on the chamber 101, such as vacuum pumping, through the pumping line 40 and maintain the pressure inside the chamber 101 within a predetermined range. Further, the chamber 101 is evacuated to a near vacuum state, and preferably, the pressure inside the chamber 101 is reduced to below 0.01Pa, even below 0.001 Pa. The gas pumping device 30 is used for continuously pumping out the gas in the chamber 101 through the pumping line 40 during the coating process so as to maintain the concentration of the gas in the chamber 101 within a certain range, and preferably, the gas pressure in the chamber 101 is maintained between 0.01 and 100 Pa.

Before the coating device 100 coats the film, a worker opens the chamber 101 of the chamber 10, wherein the substrate 600 is placed on the electrode holder 60, wherein the electrode holder 60 is positioned in the chamber 101, then the worker seals the chamber 101 of the chamber 10, and then turns on the coating device 100 for coating.

Further, the embodiment also provides a coating method of the coating apparatus 100, including the steps of:

s01, performing a negative pressure generating operation such as vacuum pumping on the chamber 101, and during film coating, pumping out air in the chamber 101 by the air pumping device 30 to control the air pressure in the chamber 101 within a preset range, so as to reduce the influence of air remaining in the chamber 101 on the film coating quality as much as possible until the air pressure in the chamber 101 reaches the preset air pressure range.

S02, performing a surface etching process or a surface cleaning and activating process on the surface of the substrate 600, specifically, continuously filling a gas raw material into the chamber 101 through the gas source pipeline 21 to perform the surface etching process on the substrate, preferably, introducing argon or helium into the chamber 101 through the gas source pipeline 21, wherein the flow rate is approximately 10 seem to 1000 seem, and is preferably 80 or 100 seem. Meanwhile, the gas-pumping device 30 is used for continuously pumping out a certain amount of gas in the chamber 101 and maintaining the gas pressure in the chamber 101 within 0.01-100Pa, preferably 8Pa, 10Pa or 100 Pa. Meanwhile, the power supply device 50 provides a pulse voltage to act on the gas in the chamber 101 to clean and activate the surface of the substrate 600, so as to perform an etching process on the surface of the substrate 600. Preferably, the power supply device 50 provides a high-voltage pulse bias voltage of-100V to-5000V, the duty ratio is 1% to 90%, the power supply time is within 1 to 60 minutes (the power supply time is the time for cleaning and activating the surface of the substrate 600 in step S02), and preferably, the power supply device 50 provides a voltage of-3000V, the duty ratio is 20% or 30%, the frequency is 10kHz or 40kHz, and the power supply time is 5, 10, 20, or 30 min.

Optionally, after the step S02 is finished, the gas source pipeline 21 is closed to stop filling the chamber 101 with the gas, and specifically, the gas source pipeline 21 has the on-off valve, where the on-off valve is used to control the on-off of the gas source pipeline 21 to open or close the gas source pipeline 21.

Optionally, after the step S02 is finished, continuing to introduce gas into the chamber 101 through the gas source pipe 21, so as to prepare the DLC film on the surface of the substrate 600 by means of plasma chemical vapor deposition. Alternatively, the flow of gas to be ionized that is passed into the chamber 101 can be adaptively changed.

It is worth mentioning that, in the process of cleaning and activating the surface of the substrate 600, the flow rate of the gas to be ionized filled into the chamber 101 through the gas source pipeline 21 can be preset within a reasonable range, so as to prevent the phenomenon that the flow rate of the gas to be ionized filled into the chamber 101 is too high or too low, which may affect the ionization effect of the surface of the substrate 600. The pulse voltage provided by the power supply device 50 is preset within a reasonable range to prevent the voltage from being too low to perform a good cleaning and activating effect on the surface of the substrate 600, or to prevent the substrate 600 from being damaged due to too high voltage. The power supply time of the power supply device 50 can be preset within a reasonable range, so as to prevent the power supply time from being too short to achieve a good cleaning and activating effect on the surface of the substrate 600, or the power supply time from being too long to prolong the period of the whole coating process, thereby causing unnecessary waste.

S03, performing film coating on the surface of the substrate 600, specifically, filling gas into the chamber 101 through the gas source pipeline 21, filling hydrogen into the chamber 101 through the hydrogen pipeline 22, filling a reaction raw material such as a hydrocarbon gas or a gasified hydrocarbon gas into the chamber 101 through the reaction raw material pipeline 23, or further filling a gas such as a doping raw material into the chamber 101 through the doping raw material pipeline 24. Preferably, the gas to be ionized filled in the chamber 101 has a gas flow rate of 10-200sccm, a gas flow rate of 0-100sccm for hydrogen gas, a gas flow rate of 50-1000sccm for a reaction raw material such as hydrocarbon gas, or a gas flow rate of 0-100sccm for a doping element reaction raw material. Meanwhile, the gas-pumping device 30 is used for continuously pumping out a certain amount of gas in the chamber 101 and maintaining the gas pressure in the chamber 101 within 0.01-100Pa, preferably 8Pa, 10Pa or 100 Pa. Meanwhile, the DLC film is prepared on the surface of the substrate 600 by using the power supply device 50 to provide rf voltage and/or high-voltage pulsed bias assisted plasma cvd, wherein the power of the rf voltage provided by the power supply device 50 is 10-800W, or the voltage of the pulsed bias provided by the power supply device 50 is-100V to-5000V, the duty ratio is 10% -80%, the power supply time of the power supply device 50 is 5-300 minutes, that is, in the step S03, the time for coating the substrate 600 is approximately 5-300 minutes.

It should be understood that, in the step S03, the voltage or the power of the power supply device 50 can be preset, and under the voltage provided by the power supply device 50, substantially all the gas in the chamber 101 can be ionized into plasma, so that a plasma environment is formed in the chamber 101, so as to facilitate the film coating apparatus 100 to prepare the film on the surface of the substrate 600 by chemical vapor deposition.

In step S03, in particular, the power supply device 50 can provide a radio frequency and/or high voltage pulse bias to act on the gas in the chamber 101, wherein the power supply device 50 discharges the gas to be ionized and the reaction raw material gas in the chamber 101 by providing a radio frequency electric field so as to make the chamber 101 in a plasma environment and the reaction raw material gas in a high energy state. The power supply device 50 generates a strong electric field in the chamber 101 by supplying a strong voltage in a high-voltage pulse bias, so that the active particles in a high-energy state are subjected to the strong electric field to accelerate deposition on the surface of the substrate 600, and an amorphous carbon network structure is formed. The power supply device 50 forms the DLC film on the surface of the substrate 600 by providing a state of a low voltage or a null voltage in a high voltage pulse bias, so that the amorphous carbon network structure deposited on the surface of the substrate 600 is subjected to a free relaxation, and the carbon structure is thermodynamically transformed to a stable phase-bent graphene sheet layer structure and is embedded in the amorphous carbon network.

It is worth mentioning that in the step S03, the gas source pipeline 21 can be closed to stop the filling of the chamber 101 with the gas to be ionized, or the flow rate of the gas to be filled into the chamber 101 can be preset within a reasonable range. The hydrogen pipe 22 can be closed so as not to stop or halfway stop filling the chamber 101 with hydrogen, or the gas flow rate of hydrogen to be filled into the chamber 101 through the hydrogen pipe 22 can be preset within a reasonable range. The reaction material pipe 23 can be controlled to be opened and closed, wherein the flow rate of the gas for filling the reaction material into the chamber 101 through the reaction material pipe 23 can be preset within a reasonable range. The doping raw material pipe 24 can be closed so as not to stop or halfway stop the filling of the doping element reaction raw material into the chamber 101, or the gas flow rate of the doping element reaction raw material filled into the chamber 101 through the doping raw material pipe 24 can be preset within a reasonable range.

It is to be understood that the ratio of the flow rates of the gas to be ionized, such as nitrogen or argon, the hydrogen gas, the reaction raw material gas, or the doping element reaction raw material gas, which is filled in the chamber 101, determines the atomic ratio in the DLC film, thereby affecting the quality of the DLC film. By presetting parameters such as the power or voltage of the radio frequency and/or pulse bias voltage provided by the power supply device 50, the regulation and control of relevant parameters such as the temperature, the ionization rate or the deposition rate in the film coating process can be realized, or by presetting the power supply time of the power supply device 50, the phenomena of thin DLC film, poor hardness performance and the like caused by too short film coating time or the phenomena of influence on transparency and the like caused by thick DLC film caused by too long film coating time are prevented.

That is, in the step S03, the DLC films having different hydrogen contents can be prepared without filling the chamber 101 with hydrogen gas at different flow rates or with a certain amount of hydrogen gas filled in the chamber 101. It can be understood that DLC films with higher hydrogen content are compared to hydrogen contentThe DLC film with lower content has higher lubricity and transparency, and in the step S03, a certain amount of hydrogen is filled into the chamber 101 to facilitate SP in the coating process³The formation of the bond may increase the hardness of the DLC film to some extent, but the hardness of the DLC film gradually decreases as the hydrogen content further increases, so that a predetermined amount of hydrogen gas may be selectively charged into the chamber 101 through the hydrogen pipe 22 in step S03 according to different coating requirements.

Accordingly, in the step S03, a certain amount of the specified doping element reaction material can be selectively charged into the chamber 101 through the doping material pipe 24. For example, the chamber is filled with a reaction raw material containing fluorine, so that the DLC film produced has higher film layer hydrophobic effect and transparency, but when the fluorine atom content exceeds 20%, the hardness of the DLC film is significantly reduced (lower than mohs hardness 4H).

S04, when the coating time of step S03 is over, the on-off valves of the gas source pipeline 21, the hydrogen pipeline 22, the reactant material pipeline 23 and the doping material pipeline 24 of the delivery pipeline 20 are all closed, and the power supply device 50 and the air exhaust device 30 are closed. As shown in fig. 8, further, the conveying pipeline 20 further includes an air conveying pipeline 25, wherein the chamber 10 further has at least one air inlet 14 communicating with the chamber 101, wherein the air conveying pipeline 25 communicates with the air inlet 14 of the chamber 101, wherein the air conveying pipeline 25 is used for filling air into the chamber 101 to make the chamber 101 in a normal pressure state. Namely, a certain amount of air is filled into the chamber 101 through the air delivery pipe 25 to return the chamber 101 to a normal pressure state, so that the staff can open the chamber 101 and take out the substrate 600, and the coating process is finished. In the whole coating process, the coating equipment 100 has good process controllability in the DLC film preparation process, and is beneficial to quickly preparing the target DLC film.

It can be seen that, in the whole coating process, the chamber 101 can be always in a normal temperature or low temperature state, that is, the coating apparatus 100 can complete coating at normal temperature or low temperature, the required time is short, and cost saving is facilitated. That is, the coating apparatus 100 can be used to coat some substrates that are not resistant to high temperature, so that the substrates are not easily damaged during the coating process. Compared with a method for realizing coating by means of physical vapor deposition such as magnetron sputtering, the coating equipment 100 of the invention can always keep the substrate 600 in a relatively low temperature state in the whole coating process without excessively increasing the temperature of the substrate 600.

Preferably, the coating apparatus 100 further includes a tail gas processing device 70, wherein the tail gas processing device 70 is connected to the pumping line 40, wherein the tail gas processing device 70 is configured to process and discharge the gas pumped by the pumping device 30, wherein the tail gas processing device 70 includes, but is not limited to, performing a recycling process or a non-pollution process on a reaction raw material such as nitrogen, an inert gas, hydrogen, a hydrocarbon gas, or an auxiliary gas doped with an element, and then discharging the reaction raw material or the auxiliary gas to the outside to prevent environmental pollution and enable recycling.

As shown in fig. 3, further, the first vacuum pump 31 is implemented as a molecular pump, wherein the second vacuum pump 32 includes a roots pump 321 and a dry pump 322, and wherein the pumping port 11 of the chamber 101, the first vacuum pump 31, the roots pump 321, the dry pump 322 and the exhaust gas treatment device 70 are all communicated with each other through the pumping line 40. Specifically, the gas in the chamber 101 is pumped out by the dry pump 322, the roots pump 321 and the molecular pump in sequence, that is, the second vacuum pump 32 is used as a pre-pump to pump out the chamber 101 first, wherein the first vacuum pump 31 is used as a secondary pump to further pump out the chamber 101, and wherein the gas pumped out in the chamber 101 is processed or recovered by the exhaust gas processing device 70 and then discharged to the outside.

It is noted that the second vacuum pump 32 comprises at least one mechanical pump and acts as a backing pump for evacuating the chamber 101, wherein the molecular pump further evacuates the chamber as a secondary pump to maintain the pressure in the chamber 101 as low as possible.

In this embodiment, the model number of the pipe between the chamber 101 and the roots pump 321 is DN100, interface IOS 100. The model parameter of the pipeline between the roots pump 321 and the dry pump 322 is DN63, and the interface is not limited. The model parameter of the pipeline of the tail gas treatment device 70 is NB32, and the interface is not limited. It should be understood by those skilled in the art that the specifications of the pipe between the chamber 101 and the roots pump 321, the pipe between the roots pump 321 and the dry pump 322, and the pipe of the exhaust gas treatment device 70 can be preset according to the actual coating requirements, and are not limited herein.

As shown in fig. 9, the power supply device 50 further comprises a radio frequency power source 51 and a pulse power source 52, wherein the radio frequency power source 51 generates a radio frequency electric field in the chamber 101 of the chamber 10 by directly loading on the electrode plate to act on the gas in the chamber 101, and wherein the pulse power source 52 is used for providing a high voltage pulse bias to act on the gas in the chamber 101. Specifically, during coating, the rf power source 51 discharges a gas such as nitrogen or an inert gas and a gas such as the reaction raw material gas in the chamber 101 by providing an rf electric field so that the chamber 101 is in a plasma environment and the reaction raw material gas is in a high-energy state. The pulse power supply 52 generates a strong electric field in the chamber 101 by supplying a strong voltage in a high-voltage pulse bias, so that the active particles (i.e., positive ions) in a high-energy state are directionally accelerated to deposit on the surface of the substrate 600 by the strong electric field and form an amorphous carbon network structure, and the pulse power supply 52 forms the DLC film on the surface of the substrate 600 by supplying a null voltage or a low-voltage state in a high-voltage pulse bias, so that the amorphous carbon network structure deposited on the surface of the substrate 600 is subjected to free relaxation and the carbon structure is thermodynamically transformed to a stable phase, i.e., a bent graphene sheet layer structure, and is embedded in the amorphous carbon network.

The rf power source 51 may also be used as a plasma matching power source, wherein the rf power source 51 comprises an rf power source, an impedance matcher, and an impedance power meter, and the rf power source 51 is installed in the cavity 10 to provide an rf electric field acting on the gas in the chamber 101. The radio frequency power supply 51 preferably provides radio frequency power at 13.56 MHz.

Further, the rf power source 51 forms the rf electric field in the chamber 101 of the chamber 10 by directly applying the rf voltage to an electrode plate disposed on the chamber 10, so as to act on the gas in the chamber 101, thereby satisfying the requirement of coating. Alternatively, the rf power source 51 may also be implemented to generate an alternating magnetic field in the chamber 101 through inductive coupling of a coil, i.e. as an ICP, so as to ensure that the gas in the chamber 101 is ionized sufficiently and uniformly by the rapidly changing magnetic field, and the coating requirement of the coating apparatus 100 can also be met, without limitation.

Preferably, the pulse power source 52 is implemented as a unidirectional negative pulse power source, wherein the pulse power source 52 has a negative terminal 521 and a positive terminal 522, wherein the negative terminal 521 is electrically connected to the electrode holder 60 and provides a negative voltage, wherein the positive terminal 522 is electrically connected to the chamber 10 and is at a positive or zero potential, wherein the electrode holder 60 and the chamber 10 are both made of an electrically conductive material, such as a metallic material, and wherein the electrode holder 60 is insulated from the chamber 10. That is, in the process of coating, the whole electrode holder 60 is a negative electrode and has a negative voltage, the whole chamber 10 is grounded as a positive electrode, and the electrode holder 60 and the chamber 10 are insulated from each other, so that the whole chamber 101 is in a strong electric field, and since the substrate 600 is placed on the electrode holder 60, active particles in a high-energy state are accelerated to be deposited on the surface of the substrate 600 under the action of the strong electric field, thereby realizing coating.

The pulse power source 52 ionizes the gas in the chamber 101 by glow discharge effect, and has directional drawing acceleration effect on the positive ions in the chamber 101, so that the positive ions accelerate deposition on the surface of the substrate 600 with bombardment effect, thereby preparing the dense and high-hardness DLC film on the surface of the substrate 600.

It can be seen that, since the whole electrode holder 60 is a negative end, the electrode holder 60 can provide a space as large as possible for installing and arranging a large number of substrates 600, and a single coating process can complete coating on all the substrates 600 on the electrode holder 60, thereby realizing large-area coating and large-scale production of DLC films.

It is worth mentioning that, in the step S03, the rf power source 51 and the pulse power source 52 jointly provide a voltage to act on the gas in the chamber 101, wherein the low-power rf discharge provided by the rf power source 51 maintains the plasma environment in the chamber 101 and suppresses the arc discharge phenomenon during the high-voltage discharge (since the arc discharge is a discharge form in which glow discharge is further enhanced, the instantaneous current may reach several tens or even several hundreds of amperes or more, and the high current will damage the substrate through the substrate surface, so that the suppression of the arc discharge phenomenon is required during the plating process in order to ensure the safety of the substrate 600). Meanwhile, the pulse power source 52 increases the energy of the positive ions reaching the surface of the substrate 600 to produce the dense and transparent DLC film.

It should be noted that the power supply device 50 in the preferred embodiment is composed of the rf power supply 51 and the pulse power supply 52 together, so as to meet the coating requirement. In an alternative case, the power supply device 50 may also be implemented as only one of the rf power supply 51 or the pulse power supply 52 according to different coating requirements, so as to meet the coating requirements. It should be understood by those skilled in the art that the power supply device 50 may be implemented as other power sources such as a microwave power source to meet the coating requirement, and is not limited herein.

It should be noted that, according to the coating requirements of different substrates, the rf voltage power and the power supply time of the rf power supply 51 can be adjusted and preset, wherein the rf voltage power of the rf power supply 51 is preferably 10-800W, and accordingly, the pulse bias voltage, the pulse frequency, the duty cycle and the power supply time provided by the pulse power supply 52 can be adjusted and preset, wherein the voltage of the pulse bias voltage provided by the pulse power supply 52 is-100V to-5000V, the pulse frequency is 20-300KHz, and the duty cycle is 10% -80%, which is not limited herein.

Since the magnitude of the negative bias provided by the pulsed power supply 52 is directly related to the ionization rate of the gas in the chamber 101 and the mobility of positive ions to the surface of the substrate 600, the higher the negative voltage of the pulsed power supply 52 is, the higher the energy of the positive ions is, and thus the higher the hardness of the DLC produced. It should be noted that the higher the energy of bombardment of the positive ions on the surface of the base material 600, the higher the bombardment energy, the more micro-scale bombardment pits are generated on the surface of the base material 600, and the temperature increase of the surface of the base material 600 is accelerated, so that the negative voltage of the pulse power source 52 is not too high to prevent the temperature of the surface of the base material 600 from being excessively increased to damage the base material 600. In addition, the higher the pulse frequency of the pulse power source 52 is, the more the electric charges continuously accumulate on the surface of the insulating portion of the substrate 600 can be avoided, thereby achieving suppression of the large arc phenomenon and an increase in the deposition thickness limit of the DLC film.

Further, the coating apparatus 100 includes a temperature detector 80, wherein the temperature detector 80 is configured to detect and feedback a reaction temperature in the chamber 101 during the coating process, such as prompting a worker in a manner of displaying a picture or giving a voice alarm, so as to further ensure that the temperature of the substrate is not too high. Specifically, the temperature detector 80 has a thermocouple 81, wherein the thermocouple 81 is disposed at the electrode holder 60 at an equivalent position to the substrate 600, wherein the thermocouple 81 is capable of detecting the reaction temperature in the chamber 101, so that the temperature detector 80 determines whether the temperature threshold of the substrate 600 is exceeded or not according to the reaction temperature detected by the thermocouple 81, if the temperature threshold is exceeded, the temperature detector 80 feeds back an abnormal signal of an excessively high temperature to remind a worker to timely handle or suspend the coating apparatus 100, and if the temperature threshold is not exceeded, the reaction temperature on the surface of the substrate 600 is normal, that is, the substrate 600 is safe.

As shown in fig. 10, it is preferable that the electrode holder 60 is implemented as a structure of a plurality of metal plates, each of which is capable of holding a certain amount of the substrate 600, wherein the electrode holder 60 has at least one insulating member 61, wherein the insulating member 61 is disposed between the electrode holder 60 and the wall of the chamber 101 to insulate the electrode holder 60 from the chamber 10. Preferably, the insulating member 61 is implemented by an insulating material such as teflon.

In another implementation manner of the preferred embodiment, the chamber 10 is not connected to the pulse power source 52, wherein the electrode holder 60 is implemented to include a plurality of layers of metal plates, and adjacent layers are insulated from each other, wherein the positive terminal 522 and the negative terminal 521 of the pulse power source 52 are electrically connected to the metal plates of the electrode holder 60 at intervals, respectively, so that the adjacent metal plates of the electrode holder 60 are mutually positive and negative. Further, the pulse power source 52 can be implemented as a positive-negative bidirectional pulse power source, so that the metal plates of the electrode holder 60 form positive electrodes or negative electrodes alternately, and adjacent metal plates are always positive and negative, so that the substrate 600 can be placed on each layer of metal plate, and the DLC film can be plated on the surface of the substrate 600 on all the metal plates, and the DLC film has better quality.

Alternatively, the pulse power source 52 can also be implemented as a symmetrical bidirectional pulse power source, i.e., the positive voltage and the negative voltage provided by the pulse power source 52 have the same magnitude. Alternatively, the pulse power source 52 is implemented as an asymmetric bidirectional pulse power source, wherein the negative voltage value provided by the pulse power source 52 is greater than the positive voltage value to provide the DLC film quality, without limitation.

It should be noted that the shape and structure of the electrode holder 60 are not limited, and the shape and size or the number of the electrode holders 60 can be adjusted adaptively within the volume of the chamber 101. Preferably, the material of the chamber 10 is stainless steel. Further, the chamber 10 has an openable and closable sealing door 15 for a worker to open or close the chamber 101 for placing or removing the substrate 600 and the chamber 101.

Further, the electrode holder 60 is detachably supported in the chamber 101, so that the electrode holder 60 can be taken out of the chamber 101, so that a worker can pre-mount the substrate 600 on the electrode holder 60 from the outside, then place the electrode holder 60 in the chamber 101, and after a coating process is finished, the worker can take out the electrode holder 60 to take out all the substrates 600, so as to reduce damage to the substrates 600 as much as possible, ensure safety of the substrates 600, and facilitate cleaning of the chamber 101 and the electrode holder 60. In addition, the electrode holder 60 can be recycled, that is, the electrode holder 60 can be used to mount another batch of the substrates 600 again in the second coating process and then be placed in the chamber 101 for the second coating process, which is advantageous for mass production.

For example, the parameters of the coating device 100 in the coating process are as follows: air intake amount: Ar/N₂/H₂/CH₄：50-500sccm，C₂H₂/O₂: 10-200 sccm; the vacuum degree of the chamber 101 before coating (i.e., the step S02): less than 2 x 10^-3Pa; during coating (i.e., at the stage of step S03), the vacuum degree of the coating chamber 101 is: 0.1-20 Pa; coating voltage: -300 to-3500V, duty cycle: 5-100%, frequency: 20-360 KHz; coating time: the DLC film has a thickness of less than 50 nm for 0.1-5 hrs, which is only exemplary and not intended to limit the present invention.

Further, the coating apparatus 100 further includes a housing 90, wherein the chamber 10, the conveying pipeline 20, the air pumping device 30, the air pumping pipeline 40, the power supply device 50, the tail gas treatment device 70, and the temperature detection device 80 can be mounted on the housing 90. Further, the housing 90 has a control panel, wherein the control panel is used for controlling the on/off or working state of the air extracting device 30 and the power supply device 50, and displaying the process and relevant parameters of the coating process of the coating equipment 100.

Further, the present embodiment also provides the DLC film, wherein the DLC film is prepared by the coating apparatus 100 and formed on the surface of the substrate 600. It is understood that the DLC film may be one or more DLC films formed on the surface of the substrate 600 by one or more times of coating by the coating apparatus 100.

It will be appreciated by persons skilled in the art that the embodiments of the invention described above and shown in the drawings are given by way of example only and are not limiting of the invention. The objects of the invention have been fully and effectively accomplished. The functional and structural principles of the present invention have been shown and described in the examples, and any variations or modifications of the embodiments of the present invention may be made without departing from the principles.

Claims

1. A coating apparatus for producing a DLC film on a substrate surface, wherein the coating apparatus comprises:

a chamber, wherein the chamber has a cavity;

a set of delivery lines;

at least one air extractor;

at least one air extraction pipeline;

a power supply device, wherein the power supply device comprises a pulse power supply; and

at least one electrode support, wherein the electrode support is arranged in the chamber for supporting the substrate, the electrode support comprises a plurality of layers of spaced metal plates, the substrate is supported on the metal plates, the electrode support is conductively connected to the pulse power supply to be used as an electrode, so that the coating equipment can prepare the DLC film on the surface of the substrate by means of chemical vapor deposition, the conveying pipeline is communicated with the chamber and is used for introducing gas raw materials into the chamber, and the gas suction device is communicated with the chamber through the gas suction pipeline and performs negative pressure operation on the chamber and controls the gas pressure in the chamber.

2. The plating apparatus according to claim 1, wherein the chamber has at least one pumping port, at least one gas inlet, and at least one material inlet port communicating with the chamber, wherein the delivery line comprises at least one gas source line and at least one reactant material line, wherein the pumping port is communicated with the pumping port, wherein the gas source line is communicated with the gas inlet port for introducing gas into the chamber, and wherein the reactant material line is communicated with the material inlet port for introducing reactant material into the chamber.

3. The plating device according to claim 2, further comprising a hydrogen gas pipe, wherein the hydrogen gas pipe and the reaction raw material pipe are communicated with the same feed port, or the hydrogen gas pipe and the reaction raw material pipe are communicated with the two feed ports, respectively.

4. The plating apparatus according to claim 2, wherein the delivery line further comprises a dopant source material pipe, wherein the dopant source material pipe is connected to the feed port for feeding a dopant element reaction source material into the chamber.

5. The plating apparatus according to claim 2, wherein the suction port is located in a middle portion of the chamber, and wherein the gas inlet and the feed port are both located in a side wall of the chamber.

6. The plating apparatus according to claim 1, wherein the evacuation device comprises at least a first vacuum pump and at least a second vacuum pump, wherein the second vacuum pump operates as a backing pump of the first vacuum pump cooperatively to perform a negative pressure operation on the chamber through the evacuation line and maintain a gas pressure within the chamber within a predetermined range.

7. The plating apparatus according to claim 6, wherein the pressure of the gas in the chamber is reduced to 0.01Pa or less.

8. The plating apparatus according to claim 6, wherein an air pressure in the chamber is maintained at 0.01 to 100 Pa.

9. The plating device according to claim 6, wherein the first vacuum pump is implemented as a molecular pump, wherein the second vacuum pump is implemented as including a roots pump and a dry pump.

10. The plating apparatus according to claim 6, wherein the plating apparatus further comprises a tail gas treatment device, wherein the tail gas treatment device is connected to the gas exhaust line for treating and exhausting the gas exhausted by the gas exhaust device.

11. The plating apparatus according to claim 1, wherein the power supply device further comprises an rf power source that is conductively connected to an electrode plate to supply an rf voltage to the chamber.

12. The plating device according to claim 1, wherein the pulse power supply has a positive terminal and a negative terminal, wherein the negative terminal is electrically connected to the electrode holder and supplies a negative voltage, wherein the chamber is grounded, and the electrode holder is insulated from the chamber.

13. The plating device according to claim 1, wherein said pulse power supply has a positive terminal and a negative terminal, wherein said positive terminal and said negative terminal of said pulse power supply are electrically connected to each of the metal plates of said electrode holder, respectively, so that two adjacent metal plates of said electrode holder are positive and negative with each other.

14. The plating apparatus according to claim 11, wherein the power of the radio-frequency voltage of the radio-frequency power supply is 10 to 800W.

15. The plating apparatus according to any one of claims 11 to 13, wherein the pulse power supply supplies a pulse bias voltage of-100V to-5000V, a pulse frequency of 20 to 300KHz, and a duty ratio of 10% to 80%.

16. The plating device according to claim 11, wherein the pulse power supply is implemented as a unidirectional pulse power supply, a symmetric bidirectional pulse power supply, or an asymmetric pulse power supply.

17. The plating device according to any one of claims 1 to 14, wherein the plating device further comprises a housing, wherein the chamber, the delivery pipe, the air-extracting means, the air-extracting pipe, and the power-supplying means are mounted to the housing.

18. A DLC film coating method is characterized in that a DLC film is prepared on the surface of a substrate by a coating device based on hydrocarbon gas as a reaction raw material, and comprises the following steps:

(a) placing the substrate on a metal plate of an electrode holder in a chamber of the coating apparatus, wherein the electrode holder comprises a plurality of spaced layers of the metal plate and is conducted to a pulsed power supply for use as an electrode;

(b) performing a negative pressure generating operation on the chamber; and

19. The plating method according to claim 18, wherein said step (c) further comprises the steps of: (c.1) introducing gas into the chamber through a gas source pipeline, and providing voltage to act on the gas in the chamber so as to etch the surface of the substrate; and (c.2) introducing a reaction raw material gas into the chamber through at least one reaction raw material pipeline, and providing voltage to act on the gas in the chamber so as to prepare the DLC film on the surface of the substrate.

20. The plating method according to claim 19, wherein in the step (c), the gas is introduced into the chamber at a gas flow rate of 10sccm to 1000 sccm.

21. The plating method according to claim 19, wherein in the step (c), radio frequency discharge is performed in the chamber.

22. The plating method according to claim 21, wherein in the step (c), the pulse power supply supplies a pulse bias voltage of-100V to-5000V, a pulse frequency of 20 to 300KHz, and a duty ratio of 10% to 80%.

23. The plating method according to claim 21, wherein a negative terminal of the pulse power supply is electrically connected to the electrode holder, the chamber is grounded, and the electrode holder is insulated from the chamber.

24. The plating device according to claim 21, wherein a positive terminal and a negative terminal of the pulse power supply are electrically connected to the plurality of metal plates of the electrode holder, respectively, and two adjacent metal plates of the electrode holder are made positive and negative with each other.

25. The plating method according to claim 19, wherein in the step (c), an rf discharge is performed in the chamber to supply an rf voltage and a pulse voltage to the gas in the chamber simultaneously.

26. The plating method according to claim 23, wherein in the step (c), the power of the rf voltage of the rf power supply is 10-800W, the voltage of the pulsed power supply for providing the pulsed bias voltage is-100V to-5000V, the pulse frequency is 20-300KHz, and the duty ratio is 10% -80%.

27. The method according to claim 19, wherein the chamber is evacuated by a second vacuum pump cooperatively acting as a backing pump of the first vacuum pump.

28. The plating method according to claim 27, wherein an air pressure in the chamber is maintained at 0.01 to 100 Pa.

29. The plating method according to claim 27, wherein the second vacuum pump is implemented to include a dry pump and a roots pump, wherein the first vacuum pump is implemented to be a molecular pump.