CN205635764U - Physics chemical vapor deposition system - Google Patents
Physics chemical vapor deposition system Download PDFInfo
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- CN205635764U CN205635764U CN201620278160.7U CN201620278160U CN205635764U CN 205635764 U CN205635764 U CN 205635764U CN 201620278160 U CN201620278160 U CN 201620278160U CN 205635764 U CN205635764 U CN 205635764U
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Abstract
The utility model discloses a physics chemical vapor deposition system, including vacuum cavity part, plasma reinforcing negative pole, magnetron sputtering negative pole, cage work rest system and air -bleed system, vacuum cavity part, plasma reinforcing negative pole and magnetron sputtering negative pole are all fixed in cage work rest system, air -bleed system and vacuum cavity part fixed connection, this physics chemical vapor deposition composite membrane layer coating film system device with the design of magnetron sputtering deposition and low pressure plasma reinforcing chemical vapor deposition in same vacuum cavity, magnetron sputtering deposition coating film and low pressure plasma reinforcing chemical vapor deposition coating film can hocket, in the rete deposit of two kinds of technologies of the surface of same substrate completion to can obtain the complex function rete.
Description
Technical field
This utility model relates to composite membrane coating technique field, is specially a kind of physical chemistry gas-phase deposition system.
Background technology
Magnetron sputtering plating ultimate principle is under the vacuum condition of applying argon gas, making argon carry out glow discharge, at this moment ar atmo is ionized into argon ion, and argon ion is under the effect of electric field force, accelerating the cathode targets that bombardment makes with plating material, target can be sputtered out and deposit to surface of the work.If employing direct current glow discharge, claim d.c. sputtering, the title radio-frequency sputtering that radio frequency glow discharge causes.The title magnetron sputtering that magnetic-control glow discharge causes.
Plasma chemical vapor deposition technique is to utilize the particle kinetic energy in plasma to excite to heal gas phase reaction, the matrix material (less than 600 DEG C) that temperature is relatively low deposits, chemical gas ionization is made due to the collision of high energy particle in the plasma, reducing the temperature of chemical deposition, this depositional mode can carry out coated film deposition the temperature of 300 DEG C.The temperature of the thin film such as chemical vapour deposition technique depositing Ti C of employing routine, TiN, TiCN is typically at 1200 DEG C, 900 DEG C, 1000 DEG C, and using PECVD is that temperature is generally 700 DEG C, 520 DEG C and 550 DEG C.This technology is applied to the deposited on substrates SiO2 at semi-conducting material the earliest, and present plasma enhanced chemical vapor deposition expanded application is in the preparation of non-crystalline silicon, amorphous carbon and diamond thin.
Magnetron sputtering technique and PECVD are two kinds of ripe widely used function film deposition techniques, but the difference of the sedimentary condition due to two kinds of methods, carries out the composite deposition of two kinds of technology in being difficult to be concurrently present in same vacuum cavity；In actual design of product function, the performance of performance and plasma enhanced chemical vapor deposition film layer in order to realize magnetron sputtering film layer is combined, need at different time, two kinds of coated film deposition technology to be carried out composite film deposition in same cavity, to obtain the special property of composite function film layer.
Utility model content
The purpose of this utility model is to provide a kind of physical chemistry gas-phase deposition system, and it can effectively solve the problem that problem present in background technology.
For achieving the above object, this utility model following technical scheme of offer: a kind of physical chemistry gas-phase deposition system, strengthen negative electrode, magnetic control sputtering cathode, cage work rest system and vacuum acquiring system including vacuum cavity part, plasma；Described vacuum cavity part, plasma strengthen negative electrode and magnetic control sputtering cathode is each attached in cage work rest system；Described vacuum acquiring system is fixing with vacuum cavity part to be connected.
Further, described vacuum cavity part includes vacuum cavity door, chamber door hinge, vacuum chamber body, high-vacuum tube bleeding point, coarse vacuum bleeding point, chamber vacuum detection mouth, overhead gage and lower baffle plate；Described vacuum cavity door is connected by chamber door hinge and vacuum chamber body are fixing；Described vacuum chamber body lower end offers high-vacuum tube bleeding point and coarse vacuum bleeding point；Described overhead gage is positioned at above vacuum chamber body and offers chamber vacuum detection mouth；Described lower baffle plate is positioned at below vacuum chamber body.
Further, described plasma enhancing negative electrode includes plasma feeder, plasma cathode plate, cathode block and plasma cathode cover；Described plasma cathode plate and the fixing connection of cathode block；Described plasma cathode cover is fixed on the outside of cathode block；Described plasma feeder is fixed on plasma cathode cover.
Further, described magnetic control sputtering cathode includes magnetic control sputtering cathode seat, magnetic control sputtering cathode plate, magnetron sputtering magnetic pole seat, magnetic control feeder and magnetic control sputtering cathode cover with magnetic pole；Described magnetic control sputtering cathode seat and the fixing connection of magnetic control sputtering cathode plate；The described magnetron sputtering magnetic pole seat with magnetic pole is fixing with magnetic control sputtering cathode plate to be connected；Described magnetic control sputtering cathode cover is positioned at the outside of magnetic control sputtering cathode seat；Described magnetic control feeder is fixing with magnetic control sputtering cathode cover to be connected.
Further, described cage work rest system includes mounting seat, load-bearing bearing, power introducing device and substrate heating equipment under mounting seat on rotary support, work rest, work rest rotary shaft, work rest；Described work rest rotary shaft upper end connects mounting seat on rotary support and work rest, and lower end connects mounting seat under work rest；Described load-bearing bearing and the fixing connection of power introducing device；Described substrate heating equipment is fixed in vacuum cavity part.
Further, described vacuum acquiring system includes that molecular pump, molecular pump connect angle valve, coarse vacuum exhaust tube, coarse vacuum extraction valve, pumping speed regulation valve, forepumping pipe, pipeline vacuum detection mouth, forepumping valve, lobe pump, fore line valve and mechanical pump；Described molecular pump connects angle valve by molecular pump and is connected on coarse vacuum exhaust tube；Described pumping speed regulation valve and coarse vacuum extraction valve are connected in parallel on coarse vacuum exhaust tube；Coarse vacuum exhaust tube is by coarse vacuum extraction valve and forepumping pipe airtight connection；Described forepumping pipe is provided with vacuum detecting mouth；Described forepumping valve is arranged on lobe pump；Described lobe pump is connected with mechanical pump by fore line valve.
Further, described plasma enhancing negative electrode has two sets, and is arranged symmetrically on the wall of vacuum cavity part, and its working vacuum is between 10-10000pa.
Further, described magnetic control sputtering cathode has two sets, and is arranged symmetrically on the wall of vacuum cavity part, and its working vacuum is between 0.01-10pa.
Preferably, whole vacuum cavity can be bled and be reached 3 × 10 by described vacuum acquiring system-4The end vacuum of Pa.
Preferably, the junction of described vacuum acquiring system and vacuum cavity part is provided with sealing ring.
Compared with prior art, the beneficial effects of the utility model are: magnetron sputtering deposition and low pressure plasma are strengthened chemical gaseous phase deposition design in same vacuum cavity by this physical chemistry vapour deposition composite film coating system device, magnetron sputtering deposition plated film and low pressure plasma strengthen chemical gaseous phase deposition plating can be alternately, the film deposition of two kinds of Technologies is completed such that it is able to obtain composite function film layer on the surface of same base material.
Accompanying drawing explanation
Fig. 1 is top view of the present utility model；
Fig. 2 is side view of the present utility model；
Fig. 3 is vacuum cavity top partial view diagram of the present utility model；
Fig. 4 is vacuum cavity partial side elevation view of the present utility model；
Fig. 5 is plasma enhancing cathode construction schematic diagram of the present utility model；
Fig. 6 is magnetic control sputtering cathode structural representation of the present utility model；
Fig. 7 is cage work rest side view of the present utility model；
Fig. 8 is cage work rest top view of the present utility model；
Fig. 9 is vacuum acquiring system structural representation of the present utility model；
In reference: 1. vacuum cavity part；2. plasma strengthens negative electrode；3. magnetic control sputtering cathode；4. cage work rest system；5. vacuum acquiring system；101. vacuum cavity doors；102. chamber door hinges；103. vacuum chamber bodies；104. high-vacuum tube bleeding points；105. coarse vacuum bleeding points；106. chamber vacuum detection mouths；107. overhead gage；108. lower baffle plate；201. plasma feeders；202. plasma cathode plates；203. cathode block；204. plasma cathode covers；301. magnetic control sputtering cathode seats；302. magnetic control sputtering cathode plates；303. with the magnetron sputtering magnetic pole seat of magnetic pole；304. magnetic control feeders；305. magnetic control sputtering cathode covers；401. rotary support；Mounting seat on 402. work rests；403. work rest rotary shafts；Mounting seat under 404. work rests；405. load-bearing bearings；406. power introducing devices；407. substrate heating equipment；501. molecular pump；502. molecular pumps connect angle valve；503. coarse vacuum exhaust tubes；504. coarse vacuum extraction valves；505. pumping speed regulation valves；506. forepumping pipes；507. pipeline vacuum detection mouths；508. forepumping valves；509. lobe pump；510. fore line valve；511. mechanical pump；A. sealing ring.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is clearly and completely described, it is clear that described embodiment is only a part of embodiment of this utility model rather than whole embodiments.Based on the embodiment in this utility model, all other embodiments that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of this utility model protection.
Fig. 1-9, a kind of technical scheme of this utility model offer: a kind of physical chemistry gas-phase deposition system are provided, strengthen negative electrode 2, magnetic control sputtering cathode 3, cage work rest system 4 and vacuum acquiring system 5 including vacuum cavity part 1, plasma；Described vacuum cavity part 1, plasma strengthen negative electrode 2 and magnetic control sputtering cathode 3 is each attached in cage work rest system 4；Described vacuum acquiring system 5 is fixing with vacuum cavity part 1 to be connected.
Further, described vacuum cavity part 1 includes vacuum cavity door 101, chamber door hinge 102, vacuum chamber body 103, high-vacuum tube bleeding point 104, coarse vacuum bleeding point 105, chamber vacuum detection mouth 106, overhead gage 107 and lower baffle plate 108；Described vacuum cavity door 101 is connected by chamber door hinge 102 is fixing with vacuum chamber body 103；Described vacuum chamber body 103 lower end offers high-vacuum tube bleeding point 104 and coarse vacuum bleeding point 105；Described overhead gage 107 is positioned at above vacuum chamber body 103 and offers chamber vacuum detection mouth 106；Described lower baffle plate 108 is positioned at below vacuum chamber body 103.
Further, described plasma enhancing negative electrode 2 includes plasma feeder 201, plasma cathode plate 202, cathode block 203 and plasma cathode cover 204；Described plasma cathode plate 202 and the fixing connection of cathode block 203；Described plasma cathode cover 204 is fixed on the outside of cathode block 203；Described plasma feeder 201 is fixed on plasma cathode cover 204.
Further, described magnetic control sputtering cathode 3 includes magnetic control sputtering cathode seat 301, magnetic control sputtering cathode plate 302, magnetron sputtering magnetic pole seat 303, magnetic control feeder 304 and magnetic control sputtering cathode cover 305 with magnetic pole；Described magnetic control sputtering cathode seat 301 and the fixing connection of magnetic control sputtering cathode plate 302；The described magnetron sputtering magnetic pole seat 303 with magnetic pole is fixing with magnetic control sputtering cathode plate 302 to be connected；Described magnetic control sputtering cathode cover 305 is positioned at the outside of magnetic control sputtering cathode seat 301；Described magnetic control feeder 304 is fixing with magnetic control sputtering cathode cover 305 to be connected.
Further, described cage work rest system 4 includes mounting seat 404, load-bearing bearing 405, power introducing device 406 and substrate heating equipment 407 under mounting seat 402 on rotary support 401, work rest, work rest rotary shaft 403, work rest；Described work rest rotary shaft 403 upper end connects mounting seat 402 on rotary support 401 and work rest, and lower end connects mounting seat 404 under work rest；Described load-bearing bearing 405 and the fixing connection of power introducing device 406；Described substrate heating equipment 407 is fixed in vacuum cavity part 1.
Further, described vacuum acquiring system 5 includes that molecular pump 501, molecular pump connect angle valve 502, coarse vacuum exhaust tube 503, coarse vacuum extraction valve 504, pumping speed regulation valve 505, forepumping pipe 506, pipeline vacuum detection mouth 507, forepumping valve 508, lobe pump 509, fore line valve 510 and mechanical pump 511；Described molecular pump 501 connects angle valve 502 by molecular pump and is connected on coarse vacuum exhaust tube 503；Described pumping speed regulation valve 505 and coarse vacuum extraction valve 504 are connected in parallel on coarse vacuum exhaust tube 503；Coarse vacuum exhaust tube 503 is by coarse vacuum extraction valve 504 and forepumping pipe 506 airtight connection；Described forepumping pipe 506 is provided with vacuum detecting mouth 507；Described forepumping valve 508 is arranged on lobe pump 509；Described lobe pump 509 is connected with mechanical pump 511 by fore line valve 510.
Further, described plasma enhancing negative electrode 2 has two sets, and is arranged symmetrically on the wall of vacuum cavity part 1, and its working vacuum is between 10-10000pa.
Further, described magnetic control sputtering cathode 3 has two sets, and is arranged symmetrically on the wall of vacuum cavity part 1, and its working vacuum is between 0.01-10pa.
Preferably, whole vacuum cavity can be bled and be reached 3 × 10 by described vacuum acquiring system 5-4The end vacuum of Pa.
Preferably, the junction of described vacuum acquiring system 5 and vacuum cavity part 1 is provided with sealing ring a.
Of the present utility model when design: this one physical chemistry gas-phase deposition system utilizes plasma to strengthen negative electrode 2 and produces plasma enhanced chemical vapor deposition film layer；Magnetron sputtering film layer is produced by magnetic control sputtering cathode 3；And then produce composite membrane in cage work rest system 4；Vacuum cavity part 1 and vacuum acquiring system 5 provide vacuum environment, it is ensured that plasma strengthens negative electrode 2 and the normal operation of magnetic control sputtering cathode 3.
Vacuum cavity part 1 is by vacuum chamber body 103；The vacuum chamber door 101 coordinated is sealed by chamber door hinge 102 with vacuum chamber body 103；Vacuum cavity part 1 base plate is offered high-vacuum tube bleeding point 104 and coarse vacuum bleeding point 105, and lower baffle plate 108 is installed；Vacuum chamber body 103 top board is welded with chamber vacuum detection mouth 106, and overhead gage 107 is installed.
Plasma enhancing negative electrode 2 seals, with cathode block 203, the plasma cathode plate 202 coordinated from cathode block 203, be fastenedly connected on vacuum chamber body 103 plasma cathode cover 204 and fastening form with the gas-phase deposition gaseous plasma feeder 201 that heals on plasma cathode cover.
Magnetic control sputtering cathode 3 is sealed, with magnetic control sputtering cathode seat 301, magnetic control sputtering cathode plate 302, the magnetron sputtering magnetic pole seat 303 with magnetic pole, the magnetic control sputtering cathode cover 305 being fastenedly connected on vacuum chamber body 103 and the fastening coordinated from magnetic control sputtering cathode seat 301 and forms with the gas-phase deposition gas magnetic control feeder 304 that heals on cathode shield.
Cage work rest system 4 drives dynamic introducing device 406 to drive the motion of the load-bearing bearing 405 being fastenedly connected therewith for power motor by conveyer belt, being formed cage work rest by mounting seat 404 under mounting seat 402, work rest rotary shaft 403 and work rest on rotary support 401, work rest to be fastenedly connected with load-bearing bearing movable face, work rest heater 407 is arranged on vacuum chamber body 103 and controlled heats outside work rest.
Vacuum acquiring system 5 is to be connected, by molecular pump, the coarse vacuum bleeding point 105 that angle valve 502 is connected on coarse vacuum exhaust tube 503, coarse vacuum extraction valve 504 is passed through corrugated tube and vacuum cavity part 1 by coarse vacuum exhaust tube 503 by two molecular pumps 501 being arranged in vacuum cavity part 1, molecular pump 501 to seal UNICOM；The circuit of bleeding being made up of pumping speed regulation valve 505 and pipeline is in parallel with coarse vacuum extraction valve 504, and is connected on coarse vacuum exhaust tube 503；Coarse vacuum exhaust tube 503 seals UNICOM by coarse vacuum extraction valve 504 and forepumping pipe 506, is provided with multiple-way duct vacuum detecting mouth 507 on forepumping pipe 506；Forepumping valve 508 is arranged on lobe pump 509；Lobe pump 509 is connected with mechanical pump 511 by fore line valve 510.
The referred to radio frequency plasma of described plasma enhancing strengthens；Described magnetron sputtering refers to magnetically controlled DC sputtering, medium frequency magnetron sputtering and rf magnetron sputtering.
Embodiment the most of the present utility model, for the ordinary skill in the art, being appreciated that in the case of without departing from principle of the present utility model and spirit and these embodiments can carry out multiple change, revise, replace and modification, scope of the present utility model is defined by the appended claims and the equivalents thereof.
Claims (5)
1. a physical chemistry gas-phase deposition system, strengthens negative electrode (2), magnetic control sputtering cathode (3), cage work rest system (4) and vacuum acquiring system (5) including vacuum cavity part (1), plasma；It is characterized in that: described vacuum cavity part (1), plasma strengthen negative electrode (2) and magnetic control sputtering cathode (3) is each attached in cage work rest system (4)；Described vacuum acquiring system (5) is fixing with vacuum cavity part (1) to be connected；
Described vacuum cavity part (1) includes vacuum cavity door (101), chamber door hinge (102), vacuum chamber body (103), high-vacuum tube bleeding point (104), coarse vacuum bleeding point (105), chamber vacuum detection mouth (106), overhead gage (107) and lower baffle plate (108)；Described vacuum cavity door (101) is connected by chamber door hinge (102) and vacuum chamber body (103) are fixing；Described vacuum chamber body (103) lower end offers high-vacuum tube bleeding point (104) and coarse vacuum bleeding point (105)；Described overhead gage (107) is positioned at vacuum chamber body (103) top and offers chamber vacuum detection mouth (106)；Described lower baffle plate (108) is positioned at vacuum chamber body (103) lower section；
Described plasma enhancing negative electrode (2) includes plasma feeder (201), plasma cathode plate (202), cathode block (203) and plasma cathode cover (204)；Described plasma cathode plate (202) and the fixing connection of cathode block (203)；Described plasma cathode cover (204) is fixed on the outside of cathode block (203)；Described plasma feeder (201) is fixed on plasma cathode cover (204)；
Described magnetic control sputtering cathode (3) includes magnetic control sputtering cathode seat (301), magnetic control sputtering cathode plate (302), magnetron sputtering magnetic pole seat (303), magnetic control feeder (304) and magnetic control sputtering cathode cover (305) with magnetic pole；Described magnetic control sputtering cathode seat (301) and the fixing connection of magnetic control sputtering cathode plate (302)；Described magnetron sputtering magnetic pole seat (303) with magnetic pole is fixing with magnetic control sputtering cathode plate (302) to be connected；Described magnetic control sputtering cathode cover (305) is positioned at the outside of magnetic control sputtering cathode seat (301)；Described magnetic control feeder (304) is fixing with magnetic control sputtering cathode cover (305) to be connected；
Described cage work rest system (4) includes mounting seat (404), load-bearing bearing (405), power introducing device (406) and substrate heating equipment (407) under mounting seat (402) on rotary support (401), work rest, work rest rotary shaft (403), work rest；Described work rest rotary shaft (403) upper end connects mounting seat (402) on rotary support (401) and work rest, and lower end connects mounting seat (404) under work rest；Described load-bearing bearing (405) and the fixing connection of power introducing device (406)；Described substrate heating equipment (407) is fixed in vacuum cavity part (1)；
Described vacuum acquiring system (5) includes that molecular pump (501), molecular pump connect angle valve (502), coarse vacuum exhaust tube (503), coarse vacuum extraction valve (504), pumping speed regulation valve (505), forepumping pipe (506), pipeline vacuum detection mouth (507), forepumping valve (508), lobe pump (509), fore line valve (510) and mechanical pump (511)；Described molecular pump (501) connects angle valve (502) by molecular pump and is connected on coarse vacuum exhaust tube (503)；Described pumping speed regulation valve (505) and coarse vacuum extraction valve (504) are connected in parallel on coarse vacuum exhaust tube (503)；Coarse vacuum exhaust tube (503) is by coarse vacuum extraction valve (504) and forepumping pipe (506) airtight connection；Described forepumping pipe (506) is provided with vacuum detecting mouth (507)；Described forepumping valve (508) is arranged on lobe pump (509)；Described lobe pump (509) is connected with mechanical pump (511) by fore line valve (510).
A kind of physical chemistry gas-phase deposition system the most according to claim 1, it is characterized in that: described plasma enhancing negative electrode (2) has two sets, and be arranged symmetrically on the wall of vacuum cavity part (1), its working vacuum is between 10-10000pa.
A kind of physical chemistry gas-phase deposition system the most according to claim 1, it is characterized in that: described magnetic control sputtering cathode (3) has two sets, and be arranged symmetrically on the wall of vacuum cavity part (1), its working vacuum is between 0.01-10pa.
A kind of physical chemistry gas-phase deposition system the most according to claim 1, it is characterised in that: whole vacuum cavity can be bled and be reached 3 × 10 by described vacuum acquiring system (5)-4The end vacuum of Pa.
A kind of physical chemistry gas-phase deposition system the most according to claim 1, it is characterised in that: the junction of described vacuum acquiring system (5) and vacuum cavity part (1) is provided with sealing ring (a).
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| CN201620278160.7U CN205635764U (en) | 2016-04-06 | 2016-04-06 | Physics chemical vapor deposition system |
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| CN201620278160.7U CN205635764U (en) | 2016-04-06 | 2016-04-06 | Physics chemical vapor deposition system |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624859A (en) * | 2018-07-18 | 2018-10-09 | 无锡爱尔华精机有限公司 | A kind of two-sided physical vapor deposition coating film equipment and its principle |
| CN109576678A (en) * | 2019-02-14 | 2019-04-05 | 拓米(成都)应用技术研究院有限公司 | A kind of preparation method of metal-macromolecule multi-layer compound film |
| CN109763107A (en) * | 2019-02-14 | 2019-05-17 | 拓米(成都)应用技术研究院有限公司 | It is a kind of to be used to prepare metal-macromolecule multi-layer compound film vacuum coating system |
| CN110965040A (en) * | 2019-12-04 | 2020-04-07 | 江苏菲沃泰纳米科技有限公司 | Coating equipment for preparing DLC (diamond-like carbon) and application thereof |
-
2016
- 2016-04-06 CN CN201620278160.7U patent/CN205635764U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108624859A (en) * | 2018-07-18 | 2018-10-09 | 无锡爱尔华精机有限公司 | A kind of two-sided physical vapor deposition coating film equipment and its principle |
| CN109576678A (en) * | 2019-02-14 | 2019-04-05 | 拓米(成都)应用技术研究院有限公司 | A kind of preparation method of metal-macromolecule multi-layer compound film |
| CN109763107A (en) * | 2019-02-14 | 2019-05-17 | 拓米(成都)应用技术研究院有限公司 | It is a kind of to be used to prepare metal-macromolecule multi-layer compound film vacuum coating system |
| CN109763107B (en) * | 2019-02-14 | 2021-03-02 | 拓米(成都)应用技术研究院有限公司 | Vacuum coating system for preparing metal-polymer multilayer composite film |
| CN110965040A (en) * | 2019-12-04 | 2020-04-07 | 江苏菲沃泰纳米科技有限公司 | Coating equipment for preparing DLC (diamond-like carbon) and application thereof |
| CN110965040B (en) * | 2019-12-04 | 2021-04-16 | 江苏菲沃泰纳米科技股份有限公司 | Coating equipment for preparing DLC (diamond-like carbon) and application thereof |
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Effective date of registration: 20230606 Address after: 430000 Wuhan University, Luojia Mountain, Wuchang, Wuhan, Hubei Province Patentee after: Gong Junbo Address before: 430075 building B1, R & D building, zone B, C and D, Wuhan National biological industry base project, 666 Gaoxin Avenue, Donghu hi tech Development Zone, Wuhan City, Hubei Province Patentee before: WUHAN KERUIDA VACUUM TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230718 Address after: Room 1003, Building B1, Phase 1, Chongwen Center, No. 792 Gaoxin Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 (Wuhan Area of Free Trade Zone) Patentee after: Luojia Advanced Equipment (Wuhan) Co.,Ltd. Address before: 430000 Wuhan University, Luojia Mountain, Wuchang, Wuhan, Hubei Province Patentee before: Gong Junbo |