CN113005414A - Magnetron sputtering coating method and device - Google Patents
Magnetron sputtering coating method and device Download PDFInfo
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- CN113005414A CN113005414A CN202110201011.6A CN202110201011A CN113005414A CN 113005414 A CN113005414 A CN 113005414A CN 202110201011 A CN202110201011 A CN 202110201011A CN 113005414 A CN113005414 A CN 113005414A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
Abstract
The invention discloses a magnetron sputtering coating method and a device, wherein the magnetron sputtering coating method comprises the following steps: ionizing the working gas to form gas positive ions and gas negative ions between the target and the substrate; bombarding the target material by positive gas ions, and moving target material atoms away from the target material and towards the direction close to the substrate; the isolation magnetic field isolates positive air ions close to the substrate, so that the positive air ions are reduced from permeating into the film when the film is formed on the surface of the substrate; the magnetron sputtering film coating method and the device provided by the invention have the advantages that the isolation magnetic field is arranged between the target and the substrate, the isolation magnetic field can block positive gas ions, the penetration of the positive air ions into the film during film formation on the surface of the substrate is reduced, and the quality of the film is improved.
Description
Technical Field
The invention relates to the technical field of coating equipment, in particular to a magnetron sputtering coating method and device.
Background
Magnetron sputtering coating is a coating technology which takes a coating material as a target cathode, bombards a target material by utilizing argon ions to generate cathode sputtering, and sputters target material atoms onto a workpiece to form a deposition layer. The magnetron sputtering coating has the advantages that: the film layer has strong adhesive force; the film layer has compact structure and good corrosion resistance; the coating has the winding and plating performance and can coat a film on the surface of a part with a complex shape; the film forming rate is high, and can be equivalent to the rate of evaporation coating, and a thick film can be coated. However, in the magnetron sputtering coating process, not only neutral gas molecules but also gas positive ions reach the substrate, the gas molecules are adsorbed on the surface of the film, and the positive ions can also penetrate into the film to a certain depth, so that the gas content in the deposited film is high, and the film quality is influenced.
Disclosure of Invention
The invention aims to solve the problem that the film subjected to sputtering coating in the prior art has high gas content, and provides a magnetron sputtering coating method and a magnetron sputtering coating device, which are used for reducing the gas content in the obtained film and improving the quality of the film.
In order to achieve the purpose, the invention adopts the following technical scheme:
a magnetron sputtering coating method comprises the following steps:
s1: ionizing the working gas to form gas positive ions and gas negative ions between the target and the substrate;
s2: bombarding the target material by positive gas ions, and moving target material atoms away from the target material and towards the direction close to the substrate;
s3: the isolation magnetic field isolates positive air ions close to the substrate, so that the positive air ions are reduced from permeating into the film when the film is formed on the surface of the substrate;
s4: target atoms are deposited on the substrate.
The invention also discloses a magnetron sputtering coating device based on the magnetron sputtering coating method, the magnetron sputtering coating device comprises a coating box, a back plate and a substrate carrier which are arranged in parallel and used for bearing the target material are arranged in the coating box, an isolation magnetic field generator is arranged between the back plate and the substrate carrier and used for generating an isolation magnetic field, the back plate is connected with the cathode of the electrode, the other side surface of the back plate, which bears the target material, is provided with a magnetic field, and the coating box is provided with a vacuum tube used for pumping the coating box into a vacuum state and an air inlet tube used for feeding working gas. And a cooling water pipe is arranged in the substrate carrier and used for cooling the substrate, and a water inlet and a water outlet of the cooling water pipe are fixedly arranged on the wall of the film coating tank.
When coating, firstly, the coating box needs to be vacuumized, then working gas enters the coating box from the gas inlet pipe to be ionized to form gas positive ions and gas negative ions, the gas positive ions bombard the target on the back plate under the attraction of the cathode, target atoms leave the target and move towards the direction close to the substrate, and the target atoms are deposited on the substrate to form a film. In the process, the isolating magnetic field generated by the isolating magnetic field generator blocks positive ions of the gas.
Specifically, the isolation magnetic field is provided with an edge line parallel to the substrate carrier, and when the substrate is mounted on the substrate carrier, the minimum distance L between the edge line and the substrate is matched with the magnetic field intensity B of the isolation magnetic field E, so that positive ions in the gas cannot reach the substrate.
Further, the matching relationship between the minimum distance L between the edge line and the substrate and the magnetic field strength B is as follows:
wherein m is the mass of the positive gas ions, q is the charge amount of the positive gas ions, and Vo is the standard speed Vo of the positive gas ions entering the isolation magnetic field.
When the positive gas ions enter the isolation magnetic field from the edge line of the isolation magnetic field at a speed less than the standard speed Vo, the positive gas ions are subjected to the lorentz force to make circular motion, and no matter how many the bias angles of the positive gas ions are, the positive gas ions cannot reach the substrate.
In the coating process, because the speeds of positive ions of gas in the coating box approaching the substrate are different, the value of the standard speed Vo needs to keep the effectiveness of the isolation magnetic field.
Preferably, the method for obtaining the standard speed Vo comprises the following steps:
a1: measuring the positive ion velocity V of the gas at a distance L from the surface of the substrate to form a data total database M related to the numerical value of the positive ion velocity V of the gas;
a2: and taking out the numerical value dense numerical value section G in the data total library M, and taking the maximum numerical value speed Vmax in the dense numerical value section G as the standard speed Vo of the isolated magnetic field.
By acquiring the standard speed Vo, the isolation magnetic field can intercept a large amount of positive gas ions.
The invention has the beneficial effects that: according to the magnetron sputtering coating method and device, the isolation magnetic field is arranged between the target material and the substrate, and can block positive gas ions, so that the positive air ions are prevented from permeating into the film when the film is formed on the surface of the substrate, and the quality of the film is improved.
The invention can be improved on the prior magnetron sputtering coating device, and has the advantages of low implementation cost, obvious effect and high application value.
Drawings
FIG. 1 is a diagram of the steps of the magnetron sputtering coating method;
FIG. 2 is a schematic structural view of the magnetron sputtering coating device;
FIG. 3 is a schematic diagram showing the distribution of an isolated magnetic field near a substrate of the magnetron sputtering coating device;
FIG. 4 is a diagram of the motion trajectory (normal bias angle) of positive gas ions in an isolated magnetic field;
FIG. 5 is a diagram of the motion trajectory (maximum bias angle) of positive gas ions in an isolated magnetic field;
fig. 6 is a step chart of the method of obtaining the standard speed Vo.
In the figure: 1. coating a film box; 2. a cathode; 3. a magnet; 4. a back plate; 5. a target material; 6. an air inlet pipe; 7. a vacuum tube; 8. an isolated magnetic field generator; 9. a substrate; 10. a substrate carrier.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
Referring to fig. 1, a magnetron sputtering coating method includes the following steps:
s1: ionizing the working gas to form gas positive ions and gas negative ions between the target and the substrate;
s2: bombarding the target material by positive gas ions, and moving target material atoms away from the target material and towards the direction close to the substrate;
s3: the isolation magnetic field isolates positive air ions close to the substrate, so that the positive air ions are reduced from permeating into the film when the film is formed on the surface of the substrate;
s4: target atoms are deposited on the substrate.
Example 2
A magnetron sputtering coating device based on the magnetron sputtering coating method in embodiment 1, refer to fig. 2, the magnetron sputtering coating device includes a coating box 1, a back plate 4 and a substrate carrier 10 which are arranged in parallel and used for bearing a target 5 are arranged inside the coating box 1, an isolation magnetic field generator 8 is arranged between the back plate 4 and the substrate carrier 10, refer to fig. 3, the isolation magnetic field generator 8 is used for generating an isolation magnetic field, the back plate 4 is connected with a cathode 2 of an electrode, the back plate 4 is provided with a magnetic field 3 on the other side surface bearing the target 5, the coating box 1 is provided with a vacuum tube 7 for vacuumizing the coating box 1 and an air inlet tube 6 for feeding working gas, and the working gas in this embodiment is argon gas.
When coating, firstly, the coating box 1 needs to be vacuumized, then working gas enters the coating box 1 from the gas inlet pipe 6 to be ionized to form gas positive ions and gas negative ions, the gas positive ions bombard the target 5 on the back plate 4 under the attraction of a cathode, atoms of the target 5 move away from the target 5 to the direction close to the substrate 9, and the target atoms are deposited on the substrate 9 to form a film. In the process, the isolating magnetic field generated by the isolating magnetic field generator 8 blocks positive gas ions.
Specifically, the isolation magnetic field is provided with edge lines parallel to the substrate carrier 10, and when a substrate is mounted on the substrate carrier 10, the minimum distance L between the edge lines and the substrate is matched with the magnetic field strength B of the isolation magnetic field E, so as to keep the positive ions of the gas from reaching the substrate 9.
Further, the matching relationship between the minimum distance L between the edge line and the substrate and the magnetic field strength B is as follows:
wherein m is the mass of the positive gas ions, q is the charge amount of the positive gas ions, and Vo is the standard speed Vo of the positive gas ions entering the isolation magnetic field.
When positive gas ions enter the isolating magnetic field from the edge line of the isolating magnetic field at a speed less than the standard speed Vo, the positive gas ions are subjected to Lorentz force to make circular motion, because of the fact that the positive gas ions are subjected to the Lorentz force
The L is greater than 2R. Referring to fig. 4 and 5, fig. 4 shows positive gas ions entering the isolation magnetic field at a general bias angle, and exiting the isolation magnetic field after passing through an arc in the isolation magnetic field; fig. 5 shows that positive gas ions enter the isolation magnetic field at the maximum bias angle, and exit the isolation magnetic field after passing through a full arc in the isolation magnetic field, that is, the positive gas ions cannot reach the substrate 9 no matter how much the bias angle of the positive gas ions is.
In the coating process, because the speeds of positive gas ions in the coating box 1 approaching the substrate 9 are different, the value of the standard speed Vo needs to keep the effectiveness of the isolation magnetic field. Referring to fig. 6, in the present embodiment, the method for obtaining the standard speed Vo includes the following steps:
a1: measuring the positive ion velocity V of the gas at a distance L from the surface of the substrate to form a data total database M related to the numerical value of the positive ion velocity V of the gas;
a2: and taking out the numerical value dense numerical value section G in the data total library M, and taking the maximum numerical value speed Vmax in the dense numerical value section G as the standard speed Vo of the isolated magnetic field.
By acquiring the standard speed Vo by the method, the isolation magnetic field can intercept a large amount of positive ions of the gas, and the high effectiveness of isolation is kept.
In the magnetron sputtering coating device in the embodiment, the isolation magnetic field is arranged between the target and the substrate, and the isolation magnetic field can block positive gas ions, so that the positive air ions are prevented from permeating into the film when the film is formed on the surface of the substrate, and the quality of the film is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (5)
1. A magnetron sputtering coating method is characterized by comprising the following steps:
s1: ionizing the working gas to form gas positive ions and gas negative ions between the target and the substrate;
s2: bombarding the target material by positive gas ions, and moving target material atoms away from the target material and towards the direction close to the substrate;
s3: the isolation magnetic field isolates positive air ions close to the substrate;
s4: target atoms are deposited on the substrate.
2. The magnetron sputtering coating device based on the magnetron sputtering coating method according to claim 1, comprising a coating box (1), wherein a back plate (4) and a substrate carrier (10) which are arranged in parallel and used for bearing a target (5) are arranged in the coating box (1), an isolation magnetic field generator (8) is arranged between the back plate (4) and the substrate carrier (10), the back plate (4) is connected with a cathode (2) of an electrode, a magnetic field (3) is arranged on the non-bearing side of the back plate (4), and the coating box (1) is provided with a vacuum tube (7) for pumping the coating box (1) into a vacuum state and an air inlet tube (6) for feeding working gas.
3. The magnetron sputtering coating method and apparatus according to claim 1, wherein the isolation magnetic field is provided with edge lines parallel to the substrate carrier (10).
4. The magnetron sputtering coating method and apparatus according to claim 1, wherein when a substrate is mounted on the substrate carrier (10), the minimum distance L between the edge line and the substrate matches with the magnetic field strength B of the isolation magnetic field E, and the matching relationship between the distance L and the magnetic field strength B is as follows:
wherein m is the mass of the positive gas ions, q is the charge amount of the positive gas ions, and Vo is the standard speed Vo of the positive gas ions entering the isolation magnetic field.
5. The magnetron sputtering coating method and device as claimed in claim 4, wherein the standard speed Vo is obtained by the method comprising the following steps:
a1: measuring the positive ion velocity V of the gas at a distance L from the surface of the substrate to form a data total database M related to the numerical value of the positive ion velocity V of the gas;
a2: and taking out the numerical value dense numerical value section G in the data total library M, and taking the maximum numerical value speed Vmax in the dense numerical value section G as the standard speed Vo of the isolated magnetic field.
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| CN202110201011.6A CN113005414A (en) | 2021-02-23 | 2021-02-23 | Magnetron sputtering coating method and device |
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| CN202110201011.6A CN113005414A (en) | 2021-02-23 | 2021-02-23 | Magnetron sputtering coating method and device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0987839A (en) * | 1995-09-22 | 1997-03-31 | Semiconductor Energy Lab Co Ltd | Method and apparatus for thin film formation |
| CN101307430A (en) * | 2008-07-04 | 2008-11-19 | 郑州大学 | Energy filtrated magnetron sputtering plating method and apparatus for applying the method |
| JP2010251799A (en) * | 2002-12-06 | 2010-11-04 | Internatl Business Mach Corp <Ibm> | Apparatus and method for shielding wafer from charged particles during plasma etching |
| CN110438462A (en) * | 2019-07-24 | 2019-11-12 | 中山大学 | A kind of magnetic control sputtering device improving oxide semiconductor quality of forming film |
| CN111155067A (en) * | 2020-02-19 | 2020-05-15 | 三河市衡岳真空设备有限公司 | Magnetron sputtering equipment |
-
2021
- 2021-02-23 CN CN202110201011.6A patent/CN113005414A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0987839A (en) * | 1995-09-22 | 1997-03-31 | Semiconductor Energy Lab Co Ltd | Method and apparatus for thin film formation |
| JP2010251799A (en) * | 2002-12-06 | 2010-11-04 | Internatl Business Mach Corp <Ibm> | Apparatus and method for shielding wafer from charged particles during plasma etching |
| CN101307430A (en) * | 2008-07-04 | 2008-11-19 | 郑州大学 | Energy filtrated magnetron sputtering plating method and apparatus for applying the method |
| CN110438462A (en) * | 2019-07-24 | 2019-11-12 | 中山大学 | A kind of magnetic control sputtering device improving oxide semiconductor quality of forming film |
| CN111155067A (en) * | 2020-02-19 | 2020-05-15 | 三河市衡岳真空设备有限公司 | Magnetron sputtering equipment |
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