CN107022742A - A kind of filming equipment of high target utilization - Google Patents
A kind of filming equipment of high target utilization Download PDFInfo
- Publication number
- CN107022742A CN107022742A CN201610065026.3A CN201610065026A CN107022742A CN 107022742 A CN107022742 A CN 107022742A CN 201610065026 A CN201610065026 A CN 201610065026A CN 107022742 A CN107022742 A CN 107022742A
- Authority
- CN
- China
- Prior art keywords
- power supply
- coil
- target
- tubular target
- plated film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
Abstract
The present invention provides a kind of filming equipment of high target utilization, is related to a kind of vacuum sputtering coating technical field.The invention includes vacuum chamber, wherein, also include tubular target, grid bias power supply, DC coil power supply and plated film power supply, tubular target is arranged in vacuum chamber, grid bias power supply, DC coil power supply and plated film power supply are arranged at outside vacuum room, water cooled coil is wound with tubular target, the first work stage is provided with above tubular target, second workpiece platform is provided with below tubular target, grid bias power supply is connected with the first work stage, DC coil power supply is connected with water cooled coil, and plated film power supply is connected with tubular target.Target utilization is greatly improved in the present invention, plated film speed is improved, while the magnetic field bound electron movement locus produced by magnet coil, extends the motion path of electronics and membrane material ion, further increase electronics and membrane material atom or molecular collision probability, so as to improve ionization level.
Description
Technical field
The present invention relates to a kind of vacuum sputtering coating technical field, more particularly to a kind of high target
The filming equipment of utilization rate.
Background technology
Vacuum sputtering equipment has been widely applied in semiconductor related industry, for example, touched
Transparent conductive film in control display panel can be made using vacuum sputtering equipment.Specifically, very
Empty sputter is the one kind for belonging to physical vapour deposition (PVD) (PVD) technology, is commonly utilized in semiconductor machining
Apply in film forming program, between the yin, yang electrode in its sputter target source in vacuum cavity high voltage with
By inert gas (such as argon gas) High temperature ion chemical conversion plasma (plasma), and in plasma from
Son can bombard sputtered target material so that the atom or molecule of sputtered target material, which splash, to be flown out and deposit, is attached to work
To form film on part surface.
The content of the invention
Weak point present in regarding to the issue above, the present invention provides a kind of high target utilization
Filming equipment, makes it that target utilization is greatly improved, and plated film speed is improved, while passing through magnet coil
The magnetic field bound electron movement locus of generation, extends the motion path of electronics and membrane material ion, enters one
Step increase electronics and membrane material atom or molecular collision probability, so as to improve ionization level.
In order to solve the above problems, the present invention provides a kind of filming equipment of high target utilization, bag
Vacuum chamber is included, wherein, in addition to tubular target, grid bias power supply, DC coil power supply and plated film power supply,
The tubular target is arranged in the vacuum chamber, the grid bias power supply, the DC coil power supply and
The plated film power supply is arranged at outside the vacuum room, and water cooled coil is wound with the tubular target,
It is provided with above the tubular target below the first work stage, the tubular target and is provided with second
Work stage, the grid bias power supply is connected with first work stage, and the grid bias power supply passes through described
The electronics that one work stage loads inside back bias voltage, the tubular target to sample is accelerated by the effect of electric field
To sample motion, the DC coil power supply is connected with the water cooled coil, the DC coil power supply
Open the after-applied magnetic field orthogonal with direction of an electric field with the coil water-cooling system, electronics in electric field force and
Spinned under the collective effect of Lorentz force in pipe motion, the plated film power supply and the tubular target
Connection, opens the plated film power supply, and a back bias voltage for being more than sample is applied to the tubular target,
Make Ar+Accelerate to bombard to tube wall, target atom is sputtered out.
It is preferred that, the upper end of the vacuum chamber is provided with air admission hole, and the air admission hole is filled with the air inlet
Connection is put, inlet duct is filled with working gas Ar into the vacuum chamber by air admission hole, reaches it
Suitable vacuum.
It is preferred that, the bottom of the vacuum chamber is provided with aspirating hole, and the aspirating hole is filled with the pumping
Connection is put, the air extractor is evacuated to the vacuum chamber, and the vacuum chamber reaches body vacuum
Degree.
It is preferred that, the water cooled coil includes coil and coil water-cooling system.
It is preferred that, winding mechanism, the winding mechanism automatic winding are provided with the second workpiece platform
The workpiece that plated film in work stage terminates, makes workpiece continuous coating in the tubular target.
It is preferred that, the coil is magnet coil, and the magnet coil is permanent magnet.
Compared with prior art, the present invention has advantages below：
The present invention makes plasma only occur in sample and tubular target by applying back bias voltage to sample
Pipe in, so only few target atom or ion can be outside dischargers, and most target grains
Son is deposited on sample or come back on target, and target utilization is so greatly improved, and improves plated film
Speed；The magnetic field bound electron movement locus that is produced by magnet coil simultaneously, make electronics and membrane material from
The motion path extension of son, further increases electronics and membrane material atom or molecular collision probability, so as to carry
High ionization level；Sample can also be cleaned with tubular target inwall simultaneously, strengthen cleaning performance；
In addition, the filming equipment is that plated film is carried out in tubular target, therefore target particle encloses sample completely
Product, make the optional position of sample surfaces can be by plated film, solving traditional filming equipment can only plate single
Plane or the diffractive not high problem of plated film, can be coated with the workpiece of complex contour.
Brief description of the drawings
Fig. 1 is embodiments of the invention structural representation.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to
Accompanying drawing is described in further detail with example to the present invention, but example is not as to the present invention
Restriction.
As shown in figure 1, embodiments of the invention include vacuum chamber 1, wherein, in addition to tubular target
Material 2, grid bias power supply 3, DC coil power supply 4 and plated film power supply 5, tubular target 2 are arranged on
In vacuum chamber 1, grid bias power supply 3, DC coil power supply 4 and plated film power supply 5 are arranged at vacuum
Outside room 1, water cooled coil 8 is wound with tubular target 2, the top of tubular target 2 is provided with
One work stage 9, the lower section of tubular target 2 is provided with second workpiece platform 10, grid bias power supply 3 and
One work stage 9 is connected, and grid bias power supply 3 loads back bias voltage, pipe by the first work stage 9 to sample
Electronics inside shape target 2 is accelerated to sample motion by the effect of electric field, DC coil power supply 4 with
Water cooled coil 8 is connected, and DC coil power supply 4 opens after-applied and electric field side with coil water-cooling system
To orthogonal magnetic field, electronics is spinned fortune under the collective effect of electric field force and Lorentz force in pipe
Dynamic, plated film power supply 5 is connected with tubular target 2, is opened plated film power supply 5, is applied to tubular target 2
Plus a back bias voltage for being more than sample, make Ar+Accelerate to bombard to tube wall, target atom is sputtered
Come.
The upper end of vacuum chamber 1 is provided with air admission hole, and air admission hole is connected with inlet duct 7, air inlet dress
Put 7 and working gas Ar is filled with into vacuum chamber 1 by air admission hole, it is reached suitable vacuum
Degree.
The bottom of vacuum chamber 1 is provided with aspirating hole, and aspirating hole is connected with air extractor 6, pumping dress
Put 6 pairs of vacuum chambers 1 to be evacuated, vacuum chamber 1 reaches body level of vacuum.Water cooled coil 8 is wrapped
Include coil and coil water-cooling system.Coil is magnet coil, and magnet coil is permanent magnet.
Winding mechanism is provided with second workpiece platform 10, winding mechanism automatic winding is arranged on work stage
On the workpiece that terminates of plated film, make workpiece continuous coating in tubular target 2.
In the present embodiment, the course of work is as follows：
The air extractor 6 for starting vacuum system is evacuated to vacuum chamber 1, and vacuum chamber 1 reaches this
After body vacuum, working gas Ar is filled with to vacuum chamber 1, suitable vacuum is reached, to sample
The electronics that product load inside back bias voltage, tubular target 2 is accelerated to sample motion by the effect of electric field,
DC coil power supply 4 and coil water-cooling system are opened simultaneously, apply the magnetic orthogonal with direction of an electric field
, electronics is spinned motion under the collective effect of electric field force and Lorentz force in pipe, is extended
Electron movement path, makes electronics be touched in motion process with working gas Ar atoms and electronics
The probability hit is greatly increased, more Ar+Attracted to accelerate bombardment workpiece surface by sample, enhance
Sample clean effect, can remove the pollutant or oxide of workpiece surface, be conducive to improve workpiece with
The adhesive force of membrane material atom or molecule.After cleaning terminates, plated film power supply 5 is opened, to tubular target
2 apply a back bias voltage for being more than sample, make Ar+Accelerate to bombard to tube wall, target atom is splashed
Shoot out, the target atom being sputtered continues by electronics and Ar+Be ionized after bombardment for target just from
Son, substantial amounts of target cation is attracted by the back bias voltage of sample and target inside pipe wall, and acceleration is deposited on sample
On product or target inside pipe wall is returned to, drastically increase target utilization.Because plasma only occurs
In the inwall of tubular target 2, therefore in the space of very little, not by neighbouring electron ionization
Ar atoms and membrane material atom or molecule are ionized again, ionize out more Ar+, membrane material cation with
Secondary electron, substantially increases the ionization rate of Ar atoms and membrane material atom or molecule.
The present invention is by applying back bias voltage to sample, the electricity of exchange being wound outside tubular target 2
Magnetic coil, makes plasma only occur in sample with the pipe of tubular target 2, so only having few
Target atom or ion can be outside discharger, and most target particle depositions are on sample or again
Newly return on target, target utilization is so greatly improved, improve plated film speed.Pass through electricity simultaneously
The magnetic field bound electron movement locus that magnetic coil is produced, prolongs the motion path of electronics and membrane material ion
It is long, further increase electronics and membrane material atom or molecular collision probability, so as to improve ionization level.Together
When sample can also be cleaned with the inwall of tubular target 2, strengthen cleaning performance；In addition, should
Filming equipment is that plated film is carried out in tubular target 2, therefore target particle encloses sample completely,
Make the optional position of sample surfaces can be by plated film, solving traditional filming equipment can only plate single flat
Face or the diffractive not high problem of plated film, can be coated with the workpiece of complex contour.In addition, if sample
Product are long filament shape, can also install winding mechanism additional in the two ends of sample clamping, i.e. work stage,
Form continuous coating mechanism.It is the effect for reaching accurate control magnetic flux simultaneously, magnet coil can be adopted
Use permanent magnet.
The foregoing description of the disclosed embodiments, enable professional and technical personnel in the field realize or
Use the present invention.A variety of modifications to these embodiments for those skilled in the art will
Be it will be apparent that generic principles defined herein can not depart from the present invention spirit or
In the case of scope, realize in other embodiments.Therefore, the present invention is not intended to be limited to this
These embodiments shown in text, and be to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (6)
1. a kind of filming equipment of high target utilization, including vacuum chamber, it is characterized in that, also include tubular target, grid bias power supply, DC coil power supply and plated film power supply, the tubular target is arranged in the vacuum chamber, the grid bias power supply, the DC coil power supply and the plated film power supply are arranged at outside the vacuum room, water cooled coil is wound with the tubular target, the first work stage is provided with above the tubular target, second workpiece platform is provided with below the tubular target, the grid bias power supply is connected with first work stage, the grid bias power supply loads back bias voltage by first work stage to sample, electronics inside the tubular target is accelerated to sample motion by the effect of electric field, the DC coil power supply is connected with the water cooled coil, the DC coil power supply opens the after-applied magnetic field orthogonal with direction of an electric field with the coil water-cooling system, electronics is spinned motion under the collective effect of electric field force and Lorentz force in pipe, the plated film power supply is connected with the tubular target, open the plated film power supply, apply a back bias voltage for being more than sample to the tubular target, make Ar+Accelerate to bombard to tube wall, target atom is sputtered out.
2. the filming equipment of high target utilization as claimed in claim 1, it is characterized in that, the upper end of the vacuum chamber is provided with air admission hole, the air admission hole is connected with the inlet duct, inlet duct is filled with working gas Ar into the vacuum chamber by air admission hole, it is reached suitable vacuum.
3. the filming equipment of high target utilization as claimed in claim 2, characterized in that, the bottom of the vacuum chamber is provided with aspirating hole, the aspirating hole is connected with the air extractor, the air extractor is evacuated to the vacuum chamber, and the vacuum chamber reaches body level of vacuum.
4. the filming equipment of high target utilization as claimed in claim 3, it is characterised in that the water cooled coil includes coil and coil water-cooling system.
5. the filming equipment of high target utilization as claimed in claim 4, it is characterized in that, winding mechanism is provided with the second workpiece platform, the workpiece that the plated film that the winding mechanism automatic winding is arranged in work stage terminates makes workpiece continuous coating in the tubular target.
6. the filming equipment of high target utilization as claimed in claim 5, it is characterised in that the coil is magnet coil, the magnet coil is permanent magnet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610065026.3A CN107022742A (en) | 2016-02-01 | 2016-02-01 | A kind of filming equipment of high target utilization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610065026.3A CN107022742A (en) | 2016-02-01 | 2016-02-01 | A kind of filming equipment of high target utilization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107022742A true CN107022742A (en) | 2017-08-08 |
Family
ID=59524734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610065026.3A Pending CN107022742A (en) | 2016-02-01 | 2016-02-01 | A kind of filming equipment of high target utilization |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107022742A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110205595A (en) * | 2019-06-12 | 2019-09-06 | 河北道荣新能源科技有限公司 | Intracavity magnetron sputtering apparatus and method |
| CN113151791A (en) * | 2021-03-15 | 2021-07-23 | 宁波赉晟新材料科技有限责任公司 | Method for quickly depositing silver coating on surface of electrical contact material |
| CN113198804A (en) * | 2021-04-30 | 2021-08-03 | 辽宁科技大学 | Method and apparatus for cleaning inner wall of slender pipeline by inert gas ionization |
| CN114686825A (en) * | 2020-12-30 | 2022-07-01 | 富联裕展科技(深圳)有限公司 | Method for controlling PVD coating |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255668A (en) * | 1988-04-01 | 1989-10-12 | Kobe Steel Ltd | Formation of film using coaxial magnetron sputtering device |
| CN1580319A (en) * | 2003-08-08 | 2005-02-16 | 应用菲林股份有限两合公司 | Cathode sputtering apparatus |
| CN101565818A (en) * | 2009-05-25 | 2009-10-28 | 苏州大学 | Sputter coating method |
| CN202543309U (en) * | 2011-12-16 | 2012-11-21 | 山东桑乐太阳能有限公司 | Magnetron sputtering cylindrical target |
| CN104109835A (en) * | 2013-04-17 | 2014-10-22 | 上海和辉光电有限公司 | Sputtering equipment and sputtering method |
-
2016
- 2016-02-01 CN CN201610065026.3A patent/CN107022742A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01255668A (en) * | 1988-04-01 | 1989-10-12 | Kobe Steel Ltd | Formation of film using coaxial magnetron sputtering device |
| CN1580319A (en) * | 2003-08-08 | 2005-02-16 | 应用菲林股份有限两合公司 | Cathode sputtering apparatus |
| CN101565818A (en) * | 2009-05-25 | 2009-10-28 | 苏州大学 | Sputter coating method |
| CN202543309U (en) * | 2011-12-16 | 2012-11-21 | 山东桑乐太阳能有限公司 | Magnetron sputtering cylindrical target |
| CN104109835A (en) * | 2013-04-17 | 2014-10-22 | 上海和辉光电有限公司 | Sputtering equipment and sputtering method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110205595A (en) * | 2019-06-12 | 2019-09-06 | 河北道荣新能源科技有限公司 | Intracavity magnetron sputtering apparatus and method |
| CN110205595B (en) * | 2019-06-12 | 2023-10-27 | 北京道荣新兴能源有限公司 | Inner cavity type magnetron sputtering equipment and method |
| CN114686825A (en) * | 2020-12-30 | 2022-07-01 | 富联裕展科技(深圳)有限公司 | Method for controlling PVD coating |
| CN113151791A (en) * | 2021-03-15 | 2021-07-23 | 宁波赉晟新材料科技有限责任公司 | Method for quickly depositing silver coating on surface of electrical contact material |
| CN113198804A (en) * | 2021-04-30 | 2021-08-03 | 辽宁科技大学 | Method and apparatus for cleaning inner wall of slender pipeline by inert gas ionization |
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Application publication date: 20170808 |
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| RJ01 | Rejection of invention patent application after publication |