KR101724375B1 - Nano-structure forming apparatus - Google Patents

Nano-structure forming apparatus Download PDF

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Publication number
KR101724375B1
KR101724375B1 KR1020150094968A KR20150094968A KR101724375B1 KR 101724375 B1 KR101724375 B1 KR 101724375B1 KR 1020150094968 A KR1020150094968 A KR 1020150094968A KR 20150094968 A KR20150094968 A KR 20150094968A KR 101724375 B1 KR101724375 B1 KR 101724375B1
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South Korea
Prior art keywords
source
forming
nanostructure
substrate
process chamber
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KR1020150094968A
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Korean (ko)
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KR20170004519A (en
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윤성호
최병운
곽동훈
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(주)광림정공
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0038—Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Abstract

The present invention relates to a nanostructure forming apparatus using a sputtering method or an evaporation method and applying a source for forming a nano structure and a source for forming a thin film alternately or simultaneously so as to enhance adhesion while forming nanoparticles of a desired size on a substrate, A substrate holder for holding the substrate, at least one source for forming a nano structure provided in the process chamber, and a source for forming a thin film provided in the process chamber are provided in the process chamber, The adhesion of the structure can be improved.

Description

[0001] Nano-structure forming apparatus [0002]

The present invention relates to a nanostructure forming apparatus using a sputtering method and more particularly to a nanostructure forming apparatus using a sputtering method or an evaporation method and applying nanostructure forming source and thin film forming source alternately or simultaneously, And a nanostructure forming apparatus capable of enhancing an adhesive force while forming a nanostructure.

Dry deposition techniques, which are widely used in various fields of industry, generally use PVD (Physical Vapor Deposition) and gas state sources using solid-state sources according to the deposition principle. (Chemical Vapor Deposition) of a chemical vapor deposition type.

In addition, depending on the type of equipment for coating such a source material on a substrate (coated material), evaporation, sputtering, cathodic arc, ion beam assisted deposition (IBAD) Plasma enhanced chemical vapor deposition (PECVD), and the like. These devices may be used alone or in combination.

In the case of plasma enhanced chemical vapor deposition (PECVD), there are advantages of a rapid deposition rate and a small shadow region for the coating material. However, due to limitations on the supply of coating source and limitation of ionization degree, DLC (Diamond Like Carbon), TiN , TiCN, and furthermore, the physical properties of the thin film deposited by the low ionization energy are relatively low.

Cathodic arc method has advantages of high ionization rate and high productivity, but it has drawbacks such as a drop in surface roughness due to droplet formation and a limitation on various material evaporation.

Sputtering technology is a technique in which when an ionized atom is accelerated by an electric field to impinge on a target, the atoms constituting the target are protruded by the impact, and the protruding atoms are deposited on the surface of the substrate. This sputtering starts from the collision between the gas supplied to the chamber and the electrons generated from the cathode. In the process, an inert gas such as Ar is introduced into the vacuum chamber, and negative (-) voltage The electrons emitted from the cathode collide with the Ar gas atoms to ionize Ar.

That is, Ar + e - (primary) = Ar + + e - (primary) + e - (secondary)

When Ar is excited, electrons are released and energy is released. At this time, a glow discharge occurs and Ar + ions in the plasma, in which ions and electrons coexist, are attracted to the cathode (target) by a large potential difference When accelerated and collided with the target surface, neutral target atoms protrude to form a thin film on the substrate.

The sputtering technique as described above can form a variety of materials such as metals, alloys, compounds, and insulators, and the deposition rate is stable and similar in various other materials. In addition, it is advantageous in adhesion of thin film, advantageous for large-sized and uniform film formation, and excellent step coverage.

As such a sputtering technique, a DC sputtering apparatus, a high frequency (RF) sputtering apparatus, a magnetron sputtering apparatus provided with a magnetron in a gun, an ion beam assisted sputtering apparatus for maximizing adhesion, and a dual gun sputtering apparatus using two guns have been known.

However, most of the metal films formed under the conventional general sputtering process conditions are formed in the form of a thin film which follows volmer-weber shape consisting of three-dimensional nucleation, growth and island connection. In order to form a nanostructure on a substrate, there is a problem that metal and inert gas ions in the plasma generated during the sputtering process must be prevented from reaching the substrate with high kinetic energy. However, when the process pressure and the distance are increased in order to reduce the energy of the deposition material in the sputtering process for the nanostructure formation, the deposition rate is rapidly reduced.

An example of a technique related to such a sputtering apparatus is disclosed in patent documents and the like.

For example, Patent Document 1 discloses a vacuum chamber, a substrate disposed in the vacuum chamber, a first magnetron sputtering source disposed in the vacuum chamber and supplying a first material to be deposited on the substrate surface, A second magnetron sputtering source for supplying a second material to be deposited onto the substrate surface, the second magnetron sputtering source comprising a first magnetron sputtering source and a dual magnetron sputtering source, And a second magnetron sputtering source disposed in the chamber to supply an ion beam onto the substrate at a location between a supply position of the first magnetron sputtering source and a supply position of the second material supplied to the substrate by the second magnetron sputtering source, An ion beam source for controlling the characteristics of the first magnetron, A bipolar power source unit for supplying a pulse power source having a polarity alternating to the sputtering source and a second magnetron sputtering source, and an ion beam power source for supplying a pulsed power source having the same period as the pulse power source supplied by the bipolar power source unit to the ion beam source, Forming apparatus.

In addition, Patent Document 2 discloses a process chamber in which a deposition space for a substrate to be deposited is formed and a substrate loading unit for loading the substrate into the deposition space is provided. The process chamber is provided at one side of the substrate loading unit in the process chamber, An ion beam source unit for irradiating an ion beam to form a diamond-like carbon (DLC) thin film on the substrate, and an ion beam source unit arranged symmetrically with the ion beam source unit with respect to the substrate loading unit in the process chamber, And a sputtering unit for forming an intermediate layer on the substrate before forming the diamond-like carbon thin film on the substrate, wherein the ion beam source unit comprises a cathode and an anode for ionizing through the flow of the introduced gas, , Wherein the surface to be vaporized of the substrate is the sputtering unit or the sputtering unit The substrate loading portion is rotatably coupled to the process chamber so as to face the ion beam source unit.

Patent Document 3 discloses a cylindrical magnetron sputtering system capable of sputtering a chamber and a target to emit nanoparticles, a vacuum pumping system for maintaining the inside of the chamber in a vacuum state, an argon gas injection system for injecting argon gas into the chamber, Apparatus, a fluid reservoir in which a fluid is stored, a drum rotating so as to form a fluid film on the surface, a cooling system for cooling the fluid and the sputtering system, and a flow rate of argon gas, voltage, voltage, distance between the sputtering target and the drum, oleic acid, the nanoparticles sputtered from the target being deposited on the fluid film of the drum.

Patent Document 4 discloses a sputtering apparatus in which a copper substrate is mounted in a vacuum chamber to ionize an argon-oxygen mixed gas and collide with a copper substrate in an argon-oxygen plasma state to produce copper oxide nanoparticles and nanorods; A device for controlling the flow rate and pressure of an argon-oxygen mixed gas, a device for controlling the angle of the copper substrate with respect to the temperature, the position, the argon-oxygen mixed gas and the heating device for heating and maintaining the temperature of the copper substrate, Lt; RTI ID = 0.0 > nanoparticles < / RTI > comprising copper oxide nanoparticles.

Patent Document 5 discloses a method of depositing an antimicrobial layer of a material on a substrate, comprising the steps of: generating a cloud of charged nanoparticles of an antimicrobial material; and electrostatically accelerating the nanoparticles toward the substrate .

Korean Registered Patent No. 10-0480357 (registered on Mar. 23, 2005) Korean Registered Patent No. 10-1309984 (registered on September 11, 2013) Korean Patent Publication No. 2005-0047175 (published May 20, 2005) Korean Patent Publication No. 2007-0096400 (published on October 22, 2007) International Patent Publication No. WO 2007/034167 (published on Mar. 29, 2007)

However, in the above-mentioned Patent Documents 1 and 2, since the material to be deposited reaches the substrate with sufficient energy to form a dense film, it is difficult to form a nanostructure.

In addition, the nanostructure forming apparatuses described in Patent Document 3 and Patent Document 4 are disadvantageous in that the structure is complicated, the deposition rate and deposition efficiency are low, and it is difficult to make it large-sized, which is difficult to apply to mass-produced products.

In addition, in the technique disclosed in Patent Document 5, since a separate vacuum pumping system for providing a pressure difference must be mounted, the manufacturing cost is relatively increased, and there is a loss of the evaporation material even through the pumping line for the differential pressure, There was a downside to this.

1, since the nanostructure forming apparatus and the sputtering apparatus are deposited in a nanostructure form, the nanostructure forming apparatus and the sputtering apparatus have a disadvantage in that the adhesion between nanoparticles is weak. Therefore, for example, Peeling occurred and the application thereof was limited.

An object of the present invention is to provide a nanostructure forming apparatus capable of improving the adhesion of a nanostructure by alternately or simultaneously applying a source for forming a nanostructure and a source for forming a thin film, will be.

Another object of the present invention is to provide a nanostructure forming apparatus for forming a nanostructure capable of increasing a sputtering process pressure, increasing a deposition rate, and forming nanoparticles of a desired size by introducing a gas flow sputtering process technology will be.

It is another object of the present invention to provide a nanostructure forming apparatus for forming a nanostructure capable of preventing a deposition loss of a deposition material generated in a nanostructure forming apparatus.

According to an aspect of the present invention, there is provided a nanostructuring apparatus for forming a nanostructure on at least one substrate, comprising: a process chamber provided with the substrate; A substrate holder for holding the substrate, at least one source for forming a nano structure provided in the process chamber, and a source for forming a thin film provided in the process chamber.

In the apparatus for forming a nanostructure according to the present invention, the substrate holder is provided below the process chamber.

In the nanostructure forming apparatus according to the present invention, the substrate holder is provided at an upper portion of the process chamber.

In the nanostructure forming apparatus according to the present invention, one or more sources for forming the nanostructure may be provided.

In the nanostructure forming apparatus according to the present invention, the nanostructure forming source and the thin film forming source simultaneously operate toward the substrate.

In the nanostructure forming apparatus according to the present invention, the nanostructure forming source and the thin film forming source alternately operate toward the substrate.

In the nanostructure forming apparatus according to the present invention, the substrate may be raised, lowered or rotated by a motor coupled to the substrate holder.

The nanostructure forming apparatus according to the present invention may further include a sensor provided in the process chamber and sensing a thickness of the nanoparticles and the thin film formed on the substrate.

Further, in the nanostructure forming apparatus according to the present invention, the source for forming the nanostructure includes a pressure control unit for controlling the pressure in the source for forming the nanostructure, and the pressure of the process chamber and the pressure of the source for forming the nanostructure are Respectively.

Further, in the nanostructure forming apparatus according to the present invention, the source for forming the nanostructure is formed in a hopper shape, and the pressure control unit includes at least one pressure control ring member and a control member for controlling the pressure in the at least one pressure control ring member, Wherein the control unit controls the amount of gas supplied into each pressure control ring or the amount of gas exhausted to vary the pressure in the at least one pressure control ring.

As described above, according to the nanostructure forming apparatus of the present invention, it is possible to improve the adhesion of the nanostructure deposited on the substrate by alternately or simultaneously operating the source for forming the thin film and the source for forming the nanostructure Loses.

In addition, according to the nanostructure forming apparatus of the present invention, since only a source for forming a nanostructure can be added to existing equipment, compatibility with existing equipment, that is, a process pressure band (sputter number ~ (10 -4 Torr or less, 10 -4 Torr or less, generally 10 -6 Torr) is maintained, and only a source for forming a nano structure is added to form a nanostructure having excellent adhesion.

In addition, according to the nanostructure forming apparatus of the present invention, since the deposition material generated in the source for forming the nanostructure flows into the source for forming the nanostructure at a relatively high rate, the effect of using the target can be improved .

According to the nanostructure forming apparatus of the present invention, more than one pressure control ring member can be controlled at different pressures to achieve a more uniform and precise process, and the sizes of the inlet and outlet of the pressure control ring can be easily adjusted. It is possible to reduce the cost for adjustment.

1 is a SEM photograph of a nanostructure deposited on a substrate by a conventional sputtering apparatus for forming a nanostructure,
2 is a schematic diagram of a nanostructure forming apparatus according to an embodiment of the present invention,
FIG. 3 is a schematic view of a source for forming a nanostructure shown in FIG. 2,
4 is a cross-sectional view of a nanostructure deposited on a substrate by the nanostructure forming apparatus according to the present invention,
5 is a view showing the configuration of the pressure control unit shown in Fig. 3,
Fig. 6 is a cross-sectional view showing an example of the shape of the pressure control ring shown in Fig. 5
7 is a schematic diagram of a nanostructure forming apparatus according to another embodiment of the present invention.

These and other objects and novel features of the present invention will become more apparent from the description of the present specification and the accompanying drawings.

The term " substrate " used in the present invention includes not only a substrate such as a conventional semiconductor substrate, but also a term including a tool, a medical instrument, a material, and the like that is mounted on a substrate holder and coated with a target nanoparticle .

Hereinafter, a specific configuration of the present invention will be described with reference to FIG. 2 and FIG.

FIG. 2 is a schematic view of a nanostructure forming apparatus according to an embodiment of the present invention, FIG. 3 is a view of the source for forming a nanostructure shown in FIG. 2, and FIG. 4 is a cross- Sectional view of a nanostructure deposited on a substrate.

2, a nanostructure forming apparatus according to an embodiment of the present invention is a nanostructure forming apparatus for forming a nanoparticle structure on at least one substrate. The nanostructure forming apparatus includes a process chamber (not shown) 100), at least one nanostructure forming source (200) provided in the process chamber, and a source (300) for forming a thin film provided in the process chamber (100). The source 200 for forming a nano structure and the source 300 for forming a thin film may be flat or cylindrical for large area deposition.

The process chamber 100 includes a substrate holder 110 capable of heating, cooling, up-and-down moving, and rotatable like a conventional sputtering chamber, a substrate 120 mounted on the substrate holder 110, Ar , A gas supply port 130 for supplying inert and reactive gases such as He and N 2 , and a gas discharge port 140.

A substrate holder 110 provided in the process chamber 100 and holding the substrate 120 is provided in a lower central portion of the process chamber 100 as shown in FIG. The substrate holder 110 is mounted on the substrate holder 120 by a motor coupled to the substrate holder 110 such that the substrate 120 can be lifted, lowered, or rotated. That is, the substrate 120 can be raised, lowered, or rotated in a state where it is mounted on the substrate holder 110, and only the substrate 120 itself in the substrate holder 110 As shown in Fig.

A detailed configuration used in a conventional nanostructure forming apparatus such as a vacuum pumping apparatus for vacuum formation and maintenance of the process chamber 100 and valves for pressure control, which are connected to the gas exhaust port 140, are omitted.

The source 200 for forming the nano structure is provided in the process chamber 100 and the target 230 is provided in the source 200 for forming the nano structure as shown in FIG. Although the source 200 for forming a nanostructure is illustrated in FIG. 2 for the sake of convenience, the present invention is not limited thereto. The source 200 for forming the nanostructures may be provided according to the type of the nanoparticles to be deposited on the substrate. have.

The target 230 may be formed of a metal material, a nonconductor, or the like corresponding to the nanoparticles to be deposited on the substrate 120, and is not particularly limited to any one metal.

A sputter gun for sputtering is mounted on the upper part of the source 200 for forming a nano structure and a pressure control unit 400 provided continuously to the source 200 for forming a nano structure and having a chamber function is provided do.

That is, in order to form the nanostructured metal thin film according to the present invention, a source 200 for forming a nanostructure and a pressure control unit 400 are provided in the process chamber 100 to perform kinetic energy control of the material.

In FIG. 2, the pressure P1 of the source 200 for forming a nano structure and the pressure P2 of the process chamber 100 are different from each other. Through the gas flow caused by the pressure difference between P1 and P2, The nanostructure deposition material produced in the deposition chamber 200 can be rapidly transferred to the process chamber 100 to improve the deposition rate. The pressure of the process chamber 100 may be less than several hundreds of mTorr, and the pressure of the source 200 may be in the range of 50 mTorr to several Torr.

As shown in FIG. 3, the sputter gun includes a magnetron source part 210 made of a magnet and a Cu plate, a shield part 220 made of a ring for sealing, A power supply line 241, a cooling water supply line 242, and a cooling water supply line 244 are connected to the operation unit 240. The target 240 is connected to the magnetron source unit 210, The cooling water discharge line 243 is fastened.

Since the sputter gun can easily apply a sputter gun applied to a conventional nanostructure forming apparatus, a detailed description thereof will be omitted.

4, the substrate 120 provided in the lower central portion of the process chamber 100 may be subjected to sputtering process conditions in the source 200 for forming a nanostructure, for example, Depending on the control conditions, the pressure conditions inside the process chamber 100, and the position of the substrate holder 110, nanoparticles controlled in shape and size of the nanostructure and particles generated by the source 300 for forming a thin film are deposited.

3, the nano structure forming source 200 is formed in a hopper shape inclined toward the process chamber 100, and the outlet part of the nano structure forming source 200 is circular, But the present invention is not limited thereto, and may be applied in a rectangular shape depending on the application.

By providing the nano structure forming source 200 in the form of a hopper, the deposition material can be easily transferred to the process chamber 100 while preventing loss of the deposition material generated in the nano structure forming source 200 Can be transported.

In addition, the nanostructure forming source 200 is provided with a source inert and reactive gas supply unit 250 and a source cooling water supply and discharge unit 260 for controlling the pressure in the chamber.

That is, in the present invention, a source inert and reactive gas supply unit 250 is provided separately from the gas supply port 130 and the gas discharge port 140 provided in the process chamber 100, and the cooling water supply line 242 provided in the sputter gun, And the cooling water supply and discharge unit 620 for the source are provided separately from the cooling water discharge line 243 to control the pressure in the source 200 for forming the nano structure so that the pressure P2 of the process chamber 100 and the pressure P2 for forming the nano structure The pressure P1 of the source 200 can be controlled to be different from each other.

The pressure control is performed by a control unit including a mass flow controller (MFC) under predetermined conditions according to the size of the nanoparticles to be deposited on the substrate 120, the type of the target 230, and the like.

As shown in FIG. 3, the sputter gun is mounted on an upper portion of a source 200 for forming a nano structure, and the stator gun has a power source for applying DC, RF, pulse DC, and MF power to the magnetron source 210 as a cathode An operating portion 240 having a supply portion, a cooling water supply portion, and a motor capable of moving the target 230 up and down is provided.

The thin film forming source 300 provided in the process chamber 100 is a magnetron sputtering apparatus having a magnetron on a gun 310. The gun includes a power supply unit for applying DC, RF, pulsed DC, and MF power to the magnetron as a cathode, A cooling water supply unit, and a motor capable of moving the target 320 up and down. Since the thin film forming source 300 is a conventional sputtering apparatus, a detailed description thereof will be omitted.

In the apparatus for forming a nanostructure according to the present invention, it is preferable that the source 200 for forming a nano structure and the source 300 for forming a thin film simultaneously operate toward the substrate 120. As shown in FIG. 4, the nano structure forming source 200 and the thin film forming source 300 operate simultaneously to form nanoparticles 121 and 122, respectively, The thin film particles generated by the thin film forming source 300 may be deposited on the substrate 120 to increase the adhesion of the nanoparticles.

In the above description, the nanostructure forming source 200 and the thin film forming source 300 operate at the same time. However, the present invention is not limited thereto, and the nanostructure forming source 200 and the thin film forming source 300 may be alternately operated toward the substrate 120. In this case, Adhesion of the nanoparticles can be increased by adopting such a structure.

3, the pressure control unit 400 includes at least one pressure control ring member 410, a control unit 420 that controls the pressure in the at least one pressure control ring member 410, 420 and a plurality of connection tubes 430 connected to the at least one pressure control ring member 410, respectively.

The one or more pressure control ring members 410 are successively provided corresponding to the outlet portion of the source 200 for forming the nanostructure, and in FIG. 3, two pressure control ring members 410 are shown, One or three or more particles may be provided corresponding to the particle size.

In the apparatus for forming a nanostructure according to the present invention, the respective pressures within the at least one pressure control ring member 410 and the source 200 for forming the nanostructure are configured to be different from each other.

The configuration of the pressure control ring member 410 and the control unit 420 will be described with reference to FIG.

5 is a view showing a configuration of the pressure control unit shown in Fig.

5, the pressure control ring member 410 is provided at a substantially central portion of the pressure control ring 411, the pressure control ring 411, and is made of an inert and reactive gas An orifice 412 for varying the pressure inside the pressure control ring 411 by supplying or exhausting the pressure control ring 411 is provided. The pressure control ring 411 is provided with a protrusion 413 at an upper portion of the pressure control ring 411 so that one or more pressure control rings can be easily coupled to the pressure control ring 411. A protrusion 413 is formed at a lower portion of the pressure control ring 411 A fastening groove 414 to be inserted is provided.

The pressure control ring member 410 can be formed in multiple stages corresponding to the size of the nanoparticles to be deposited on the substrate 120 by fitting the projection 413 into the engagement groove 414. [ To this end, it is preferable to provide a coupling groove corresponding to the protrusion 413 at the lower end of the hopper shape of the source 200 for forming a nano structure.

The control unit 420 controls the amount of gas supplied to the orifice 412 through each connection pipe 430 or the amount of gas supplied to the orifice 412 in order to variably control the respective pressures in the at least one pressure control ring member 410 A mass flowmeter for adjusting the amount of fluid, and a valve system.

Meanwhile, inert and reactive gases supplied to the pressure control ring member 410 use an inert gas such as Ar and He supplied to the process chamber 100 and the source 200 for forming a nanostructure, It is also possible to supply a gas different from the inert and reactive gases supplied to the process chamber 100 and the source 200 for forming the nanostructures depending on the kind of the nanoparticles.

Next, the structure of the pressure control ring 411 applied to the present invention will be described with reference to Fig.

6 is a cross-sectional view showing an example of the shape of the pressure control ring shown in Fig.

The inside of the pressure control ring 411 according to the present invention may have the same shape as the inner ring at the inlet and the outlet at the same time as the ordinary ring. However, the pressure control ring 411 may be narrower (Fig. 6A), a shape widening from the inlet to the outlet (Fig. 6B), a shape in which the central portion is recessed (Figs. 6C and 6E) (Figs. 6 (d) and 6 (f)).

As described above, the pressure control ring 411 is provided and the pressure inside the pressure control ring 411 is controlled to control the flow of the gas to control the deposition rate, and the desired size of nanoparticles Can be deposited.

Next, another example of the nanostructure forming apparatus according to the present invention will be described with reference to FIG.

FIG. 7 is a schematic view of a nanostructure forming apparatus according to another embodiment of the present invention. The same reference numerals are given to the same components as those shown in FIG. 2, and a repetitive description thereof will be omitted.

7, the substrate holder 110 is provided on the upper part of the process chamber 110, unlike the embodiment shown in FIG.

A plurality of substrates 120 are mounted on the substrate holder 110 and the substrate holder 120 is mounted on the substrate holder 110 such that the substrate 120 can be lifted up or down or rotated by a motor coupled to the substrate holder 110 . That is, the plurality of substrates 120 can be raised, lowered, or rotated while being mounted on the substrate holder 110, and a plurality of substrates (not shown) 120 may be provided to rotate.

Since the substrate holder 110 is provided on the upper portion of the process chamber 110 as described above, the outlet of the source 200 for nanostructure formation is provided to face the substrate holder 110.

In the embodiment shown in FIG. 7, the source 300 for forming a thin film includes a power supply portion for applying DC power to a boat 330 provided with a target as a cathode. Since the thin film forming source 300 is a conventional evaporator, a detailed description thereof will be omitted.

A sensor 160 is provided in the process chamber 100 to sense the thickness of the nanoparticles and the thin film deposited on the substrate 120 by the sensor 160. Although the structure in which one sensor is provided is illustrated in FIG. 7, the present invention is not limited thereto. A plurality of sensors 160 may be provided in the process chamber 110.

In the embodiment shown in FIG. 7, similarly to the embodiment shown in FIG. 2, the source 200 for forming the nanostructures and the source 300 for forming the thin film can be flat or cylindrical Although a source 200 for forming a nanostructured structure is illustrated in FIG. 1, a source 200 for forming a nanostructure may be provided according to the type of nanoparticles to be deposited on the substrate 120, the size of the substrate 120, .

Although the present invention has been described in detail with reference to the above embodiments, it is needless to say that the present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

By using the apparatus for forming a nanostructure for forming a nanostructure according to the present invention, the adhesion of the nanostructure deposited on the substrate can be improved.

100: Process chamber
200: source for nanostructuring
300: source for forming a thin film
400: pressure control unit

Claims (10)

A nanostructure forming apparatus for forming a structure of nanoparticles on at least one substrate and improving the adhesion of the nanostructure,
A process chamber in which the substrate is provided,
A substrate holder provided in the process chamber and holding the substrate,
At least one nanostructure forming source provided in the process chamber and
And a thin film forming source provided in the process chamber,
Wherein the source for forming the nanostructure comprises a pressure control unit for controlling the pressure in the source for forming the nanostructure,
The source for forming the nanostructure is formed in a hopper shape,
Wherein the pressure control unit includes at least two pressure control ring members and a control unit for controlling a pressure in each of the at least two pressure control ring members,
Wherein the at least two pressure control ring members are provided successively corresponding to an outlet portion of the source for forming the nano structure,
Wherein the at least two pressure control ring members each include a pressure control ring and an orifice for varying the pressure inside the pressure control ring. The method of claim 1,
Wherein the substrate holder is disposed under the process chamber. The method of claim 1,
Wherein the substrate holder is provided on top of the process chamber. 3. The method according to claim 2 or 3,
Wherein at least one source for forming the nano structure is provided. 5. The method of claim 4,
Wherein the nanostructure forming source and the thin film forming source simultaneously operate toward the substrate. 5. The method of claim 4,
Wherein the nanostructure forming source and the thin film forming source alternately operate toward the substrate. 5. The method of claim 4,
Wherein the substrate is raised, lowered, or rotated by a motor coupled to the substrate holder. 4. The method of claim 3,
Further comprising: a sensor provided in the process chamber for sensing the thickness of the nanoparticles and the thin film formed on the substrate. The method of claim 1,
Wherein the pressure of the process chamber and the pressure of the source for forming the nanostructures are different from each other. The method of claim 9,
Wherein the control unit controls the amount of gas fed into each pressure control ring or the amount of gas exhausted to vary the pressure in the at least two pressure control rings.
KR1020150094968A 2015-07-03 2015-07-03 Nano-structure forming apparatus KR101724375B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190012830A (en) * 2017-07-28 2019-02-11 한국생산기술연구원 3D vacuum deposition printer system and 2D-3D composite material from the system

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018221779A1 (en) 2018-12-14 2020-06-18 Mando Corporation Master cylinder assembly for a brake system
KR102190711B1 (en) * 2018-12-26 2020-12-15 (주)광림정공 Structure and manufacturing method for substrate of surface enhanced raman scattering of nanoporous-structure using a plurality of sources for nano-structure
KR102274582B1 (en) * 2019-12-27 2021-07-08 (주)광림정공 Structure and manufacturing method for substrate of surface enhanced raman scattering with partial hydrophilic

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480357B1 (en) * 2002-07-10 2005-03-30 아이티엠 주식회사 Film deposition apparatus having dual magnetron sputtering system and ion beam source which are synchronized
WO2007034167A2 (en) * 2005-09-20 2007-03-29 Mantis Deposition Limited Antibacterial surface coatings
JP2009500522A (en) 2005-07-07 2009-01-08 シーメンス アクチエンゲゼルシヤフト Method and apparatus for producing a layer with nanoparticles on a substrate
KR101136302B1 (en) * 2010-11-16 2012-04-19 주식회사 케이씨텍 Atomic layer deposition apparatus and method to detect plasma thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050047175A (en) 2003-11-17 2005-05-20 부산대학교 산학협력단 A method for making nanofluids in use of the sputtering, and its making apparatus
KR20070096400A (en) 2006-03-24 2007-10-02 장기완 Sputtering apparatus for fabricating copper oxide nanorods and nanoparticles using ar-o mixture gas
KR101309984B1 (en) 2011-09-26 2013-09-17 한국생산기술연구원 Apparatus and method to deposition substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100480357B1 (en) * 2002-07-10 2005-03-30 아이티엠 주식회사 Film deposition apparatus having dual magnetron sputtering system and ion beam source which are synchronized
JP2009500522A (en) 2005-07-07 2009-01-08 シーメンス アクチエンゲゼルシヤフト Method and apparatus for producing a layer with nanoparticles on a substrate
WO2007034167A2 (en) * 2005-09-20 2007-03-29 Mantis Deposition Limited Antibacterial surface coatings
KR101136302B1 (en) * 2010-11-16 2012-04-19 주식회사 케이씨텍 Atomic layer deposition apparatus and method to detect plasma thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190012830A (en) * 2017-07-28 2019-02-11 한국생산기술연구원 3D vacuum deposition printer system and 2D-3D composite material from the system
KR101980341B1 (en) * 2017-07-28 2019-05-20 한국생산기술연구원 3D vacuum deposition printer system and 2D-3D composite material from the system

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