CN101307430A - Energy filtrated magnetron sputtering plating method and apparatus for applying the method - Google Patents
Energy filtrated magnetron sputtering plating method and apparatus for applying the method Download PDFInfo
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- CN101307430A CN101307430A CNA2008101404971A CN200810140497A CN101307430A CN 101307430 A CN101307430 A CN 101307430A CN A2008101404971 A CNA2008101404971 A CN A2008101404971A CN 200810140497 A CN200810140497 A CN 200810140497A CN 101307430 A CN101307430 A CN 101307430A
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Abstract
The invention discloses an energy filtration magnetron sputtering coating method and a device for implementing the method. The method is as follows: a conductive filter screen which is connected with an anode is arranged between the surface of a substrate to be coated and sputtering target materials; ions generated by bombarded cathodic sputtering target materials during the sputtering coating process are filtered by the conductive filter screen and then sent to the coating growth surface of the substrate to be coated on the anode; when the ions generated by the sputtering target materials pass through the conductive filter screen, the conductive filter screen with high anode potential absorbs high-energy electrons in the ions and repels high-energy positive ions in the ions. The device can arrange the conductive filter screen with the high anode potential on an outer cover of the substrate on the basis of the prior device so as to inhibit the damage of high-energy particle bombardment on the substrate during the process of preparing a film by the magnetron sputtering technology, and surface grains of the prepared film are made to be more fine and more uniform and have higher flatness. Moreover, the device can be formed by modifying the prior device, is not large in modification and is easy to realize.
Description
Technical field
The present invention relates to the magnetron sputtering technology field, especially a kind of energy filtrated magnetron sputtering plating method and implement the energy filtrated magnetron sputtering plating device of this method.
Background technology
Magnetron sputtering plating is a kind of important film preparing technology, is widely used in scientific research and industrial production.For example, can utilize magnetron sputtering coating method to prepare various metals, semi-conductor and sull, at industrial production ITO transparent conducting glass etc.Magnetron sputtering plating is to utilize energetic ion bombardment target material surface in a vacuum, makes the target particle that is pounded prepare the technology of film in the substrate surface deposition.This technology has many good qualities, and for example can produce the film of high-melting-point material easily; But the even film forming of big area; Sedimentation rate is big; Power efficiency is high.But this technology also has its limitation, at first prepares in the process of film with this technology because the bombardment effect meeting of high energy particle causes damage to the existing not rete of anti-bombardment the on the substrate of not anti-bombardment or the substrate, causes material modification; Secondly the film surface appearance of this technology preparation is often more coarse, can not satisfy the needs of some application.These drawbacks limit the use range of this technology.For example, can cause damage to organic luminous layer when preparing as top anodic ito thin film with magnetron sputtering technique in the top radiation organic EL part (TOLED), cause device luminosity decline or not luminous; Some occasion could be used after need polishing the ito thin film on ito glass surface.
Summary of the invention
The object of the present invention is to provide and to carry out the energy filtrated magnetron sputtering plating method that kinetic energy weakens to the energetic ion that sputtering target material sends, the energy filtrated magnetron sputtering plating device of this method of enforcement is provided simultaneously.
Technical scheme of the present invention is: energy control magnetron sputtering coating method:
(1) between the film growth surface of substrate to be coated and sputtering target material, is provided with the conducting filtration net that in the sputter coating process, has the anode noble potential;
(2) be sent to the plated film growth surface of the substrate to be coated at anode place behind the ion process conducting filtration net filtration that the cathode sputtering target that is bombarded is produced again, the ion that sputtering target material produced has conducting filtration net attraction high-energy electron, the repulsion high energy positive ion wherein wherein of anode noble potential through the conducting filtration net time.
Is connected as anodic substrate fabricated section conduction in described conducting filtration net and the plated film, the conducting filtration guard keeps off the periphery of the substrate installation place that is arranged at the substrate erecting frame.
Described conducting filtration net is metallic substance or conductive non-metals material.
Be provided with between the substrate installation place of substrate support and sputtering target material and can cover the conducting filtration net that retaining needs the film growth surface of plated film substrate, described conducting filtration net conduction is connected on the anode assembly that has the anode noble potential in the sputter coating process.
Described anode assembly is the anodic substrate support.
Described conducting filtration net is metallic substance or conductive non-metals material.
Method of the present invention is to be covered with the high energy particle that the conducting filtration net that has the anode noble potential attracts or repel opposed polarity outside substrate to be coated, influence the motion of energetic ion, thereby suppress magnetron sputtering technique and prepare the damage that high-energy particle bombardment causes substrate in the thin-film process, and making the film surface crystal grain of preparing more tiny, even, planeness is higher; The conducting filtration net can be selected the non-metallic material of metal or conduction.Device of the present invention can cover the conducting filtration net that retaining needs the plated film substrate surface in the outer setting of substrate support on the basis of original device, to reduce the damage that the high-energy particle bombardment substrate is caused in coating process of existing magnetic control sputtering film plating device; The present invention can improve the quality and the performance of film on substrate, and the ito thin film transmittance of for example preparing is higher; TiO
2The wetting angle of film reduces, and wetting ability is stronger, and the enforcement of method of the present invention and device can be changed by conventional apparatus and form, and has to change little, easy advantage such as realization.
Fig. 4, Fig. 5 are respectively the SEM photo that uses traditional magnetron sputtering technology and use the Ti film surface topography that the energy filtrated magnetron sputtering plating technology prepares under the same deposition condition, can find out that the Ti film crystal grain for preparing among Fig. 5 is tiny evenly, the surface is very smooth smooth.
Fig. 6, structure shown in Figure 7 are Glass/Al/Alq
3The top radiation organic EL part of/TPD/ITO (Top-emitting Organic Light-emitting Diodes, TOLED) in, ITO top anode is to use traditional magnetically controlled DC sputtering device and energy filtrated magnetron sputtering plating technology and installs finally prepd.The ito thin film surface SEM photo that existing method and the inventive method are prepared respectively is respectively as Fig. 6, shown in Figure 7, and by finding out among the figure, the ito thin film surface microstructure of energy filtrated magnetron sputtering plating technology preparation is little, the interface is clear; The SEM photo in the TOLED device transverse section that existing method and the inventive method are prepared respectively is respectively as Fig. 8, shown in Figure 9, existing method and the inventive method are prepared the illumination effect of TOLED device respectively respectively as Figure 10, shown in Figure 11, by finding out among the figure, TOLED device luminosity under same drive voltage of energy filtrated magnetron sputtering plating technology preparation improves greatly.
Description of drawings
Fig. 1 is the structural representation of energy filtrated magnetron sputtering plating device of the present invention;
Fig. 2 is the microgram of conducting filtration net example grid 1 of the present invention;
Fig. 3 is the microgram of conducting filtration net example grid 2 of the present invention;
Fig. 4 is the Ti film surface SEM photo of existing magnetically controlled sputter method preparation;
Fig. 5 is the Ti film surface SEM photo of energy filtrated magnetron sputtering method preparation of the present invention;
Fig. 6 is the SEM photo on the existing magnetically controlled sputter method ito thin film surface of preparing;
Fig. 7 is the SEM photo on the energy filtrated magnetron sputtering method of the present invention ito thin film surface of preparing;
Fig. 8 is the SEM photo in the existing magnetically controlled sputter method TOLED device transverse section of preparing;
Fig. 9 is the SEM photo in the energy filtrated magnetron sputtering method of the present invention TOLED device transverse section of preparing;
Figure 10 is the illumination effect of the TOLED device prepared of existing magnetically controlled sputter method;
Figure 11 is the illumination effect of the TOLED device prepared of energy filtrated magnetron sputtering method of the present invention.
Embodiment
As shown in Figure 1, energy filtrated magnetron sputtering plating device of the present invention, comprise the substrate support 1 and the sputtering target material 4 that are oppositely arranged in the vacuum chamber 5, vacuum chamber 5 has inlet and outlet mouth 6,7, and installing needs the substrate 2 of plated film on the opposite face of substrate support 1 and sputtering target material 4, and sputtering target material 4 is a negative electrode, substrate support 1 is an anode, sputtering target material 4 also is provided with the magnet that can produce magnetic field behind, and above content is the public technology of existing magnetic control sputtering film plating device, and its detail no longer describes in detail herein.Innovation part of the present invention is: be provided with the conducting filtration net 3 of the opposite face that can cover grade substrate 2 and sputtering target material 4 in the vacuum chamber 5 between substrate support 1 and sputtering target material 4, conducting filtration net 3 is connected with anodic substrate support 1 conduction.The material of conducting filtration net 3 can be selected metal or conductive non-metals material for use.
As Fig. 2, shown in Figure 3, two object lessons of conducting filtration net 3 have been provided among the figure.Grid specification 1: mesh is 555 μ m, unit surface mesh count 2.28 * 10 for circular, mesh diameter
6/ m
2, conducting filtration grid thickness 100 μ m; Grid specification 2: mesh is that strip, mesh area are 475 * 130 μ m
2, unit surface mesh count 3.37 * 10
6/ m
2, conducting filtration grid thickness 100 μ m.
During energy filtrated magnetron sputtering plating device busy of the present invention, the high energy particle that sputtering target material 4 sends mainly is electronics and other some positive ions.Have higher current potential because conducting filtration net 3 is connected with anodic substrate support 1, thereby the charged particle from the opposed polarity in the plasma body is had attraction or repulsive interaction respectively.When electronics near the time, conducting filtration net 3 can be attracted to conducting filtration net 3 with most high-energy electrons and get on; And for the positive ion of high energy, conducting filtration net 3 has repulsive interaction to them, and they are being reduced greatly by the energy behind the conducting filtration net 3.Thereby conducting filtration net 3 plays the effect of filtering high energy particle, avoided high energy particle to the excessive bombardment of substrate 2 and the mistake high temperature rise of the caused substrate 2 of particle bombardment.
Conducting filtration net in the foregoing description connects with the substrate support conduction and has the noble potential identical with the anodic substrate support, is to transform on the basis of original device for convenience like this; Other conducting wires can certainly be set with other anode components on conducting filtration net and the film coating apparatus or the outer anode of device is connected and make the conducting filtration netting gear be equipped with the anode noble potential, for example the substrate support of film coating apparatus and casing be by ground connection as anode, the conducting filtration net just can connect the anode noble potential possess relative (with respect to the sputtering target material of negative electrode) by ground connection or with casing; Be connected in differently though perhaps wire netting is drawn conduction by vacuum chamber separately, be still with respect to negative electrode on the electrode of noble potential with anode potential.This class is changed the simple replacement that belongs to technical solution of the present invention, should fall within protection scope of the present invention.
Claims (6)
1, energy control magnetron sputtering coating method is characterized in that:
(1) between the film growth surface of substrate to be coated and sputtering target material, is provided with the conducting filtration net that in the sputter coating process, has the anode noble potential;
(2) be sent to the plated film growth surface of the substrate to be coated at anode place behind the ion process conducting filtration net filtration that the cathode sputtering target that is bombarded is produced again, the ion that sputtering target material produced has conducting filtration net attraction high-energy electron, the repulsion high energy positive ion wherein wherein of anode noble potential through the conducting filtration net time.
2, energy filtrated magnetron sputtering plating method according to claim 1, it is characterized in that: is connected as anodic substrate fabricated section conduction in described conducting filtration net and the plated film, the conducting filtration guard keeps off the periphery of the substrate installation place that is arranged at the substrate erecting frame.
3, energy filtrated magnetron sputtering plating method according to claim 1 and 2 is characterized in that:
Described conducting filtration net is metallic substance or conductive non-metals material.
4, energy filtrated magnetron sputtering plating device, comprise the substrate support anode and the sputtering target material negative electrode that are oppositely arranged in the vacuum chamber, it is characterized in that: be provided with between the substrate installation place of substrate support and sputtering target material and can cover the conducting filtration net that retaining needs the film growth surface of plated film substrate, described conducting filtration net conduction is connected on the anode assembly that has the anode noble potential in the sputter coating process.
5, energy filtrated magnetron sputtering plating device according to claim 4 is characterized in that: described anode assembly is the anodic substrate support.
6, according to claim 4 or 5 described energy filtrated magnetron sputtering plating devices, it is characterized in that:
Described conducting filtration net is metallic substance or conductive non-metals material.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101404971A CN101307430A (en) | 2008-07-04 | 2008-07-04 | Energy filtrated magnetron sputtering plating method and apparatus for applying the method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101404971A CN101307430A (en) | 2008-07-04 | 2008-07-04 | Energy filtrated magnetron sputtering plating method and apparatus for applying the method |
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| CN101307430A true CN101307430A (en) | 2008-11-19 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102394210A (en) * | 2011-11-24 | 2012-03-28 | 深圳市创益科技发展有限公司 | Device and method used for preparing transparent conducting film of thin film solar cell |
| CN102024864B (en) * | 2009-09-16 | 2012-08-22 | 吴静怡 | Method for manufacturing solar module |
| CN103233208A (en) * | 2013-04-24 | 2013-08-07 | 上海交通大学 | Device and method for preparing micro nano-structure film by using ion beam sputtering method |
| CN106319455A (en) * | 2015-06-24 | 2017-01-11 | 英属开曼群岛商精曜有限公司 | Film plating system |
| CN108441835A (en) * | 2018-04-11 | 2018-08-24 | 京东方科技集团股份有限公司 | Magnetron sputtering apparatus, film build method, OLED preparation methods and display panel |
| CN113005414A (en) * | 2021-02-23 | 2021-06-22 | 湖南匡楚科技有限公司 | Magnetron sputtering coating method and device |
-
2008
- 2008-07-04 CN CNA2008101404971A patent/CN101307430A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024864B (en) * | 2009-09-16 | 2012-08-22 | 吴静怡 | Method for manufacturing solar module |
| CN102394210A (en) * | 2011-11-24 | 2012-03-28 | 深圳市创益科技发展有限公司 | Device and method used for preparing transparent conducting film of thin film solar cell |
| CN102394210B (en) * | 2011-11-24 | 2013-12-11 | 深圳市创益科技发展有限公司 | Device and method used for preparing transparent conducting film of thin film solar cell |
| CN103233208A (en) * | 2013-04-24 | 2013-08-07 | 上海交通大学 | Device and method for preparing micro nano-structure film by using ion beam sputtering method |
| CN103233208B (en) * | 2013-04-24 | 2016-04-13 | 上海交通大学 | Ion beam sputtering is utilized to prepare the method for micro nano structure film |
| CN106319455A (en) * | 2015-06-24 | 2017-01-11 | 英属开曼群岛商精曜有限公司 | Film plating system |
| CN108441835A (en) * | 2018-04-11 | 2018-08-24 | 京东方科技集团股份有限公司 | Magnetron sputtering apparatus, film build method, OLED preparation methods and display panel |
| CN113005414A (en) * | 2021-02-23 | 2021-06-22 | 湖南匡楚科技有限公司 | Magnetron sputtering coating method and device |
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Open date: 20081119 |