CN219315043U - Transparent conductive oxide film deposition equipment - Google Patents
Transparent conductive oxide film deposition equipment Download PDFInfo
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- CN219315043U CN219315043U CN202320295611.8U CN202320295611U CN219315043U CN 219315043 U CN219315043 U CN 219315043U CN 202320295611 U CN202320295611 U CN 202320295611U CN 219315043 U CN219315043 U CN 219315043U
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Abstract
The utility model discloses transparent conductive oxide film deposition equipment, which comprises a vacuum chamber, a hollow cathode ion gun arranged outside the vacuum chamber, and a vacuumizing system capable of vacuumizing the vacuum chamber, wherein a substrate bearing plate and a focusing water-cooling crucible assembly are arranged in the vacuum chamber, and an argon protection system is arranged outside the vacuum chamber, and comprises an argon generating source arranged outside the vacuum chamber, a first argon gas guide pipe arranged between the argon generating source and the hollow cathode ion gun, and a second argon gas guide pipe which is introduced into the bottom of the vacuum chamber by the argon generating source; the device utilizes the hollow cathode arc discharge technology, generates cathode glow discharge and a large amount of hot electrons by ionizing argon through hundred volts in a vacuum environment in a vacuum chamber, then immediately converts the cathode glow discharge into arc discharge, and directionally bombards a film material under the action of an electric field and a deflection magnetic field by high-density electron beams so as to melt and evaporate the film material, and finally deposits a film layer on a substrate.
Description
Technical Field
The utility model relates to the technical field of film material preparation devices, in particular to transparent conductive oxide film deposition equipment.
Background
Transparent conductive oxide films are one of the basic elements in various optoelectronic devices such as solar cells, photodetectors, light emitting diodes, flat panel displays. An ideal TCO film should have high visible light transmittance and large area conductivity while being stable in performance. Recently, with the advent of wearable electronics and folding screen smartphones, TCO films should also have a transparent conductive oxide film preparation device mechanical strength and flexibility.
The most common TCO films such as FTO, ITO are widely used as bottom electrode of solar cells due to their excellent conductivity and transmittance. However, these TCO films are usually prepared by a high-energy sputtering process, such as when used as a top electrode, which is inevitably damaging to the active layer of the device, such as the transparent conductive oxide film preparation apparatus disclosed in the patent document with publication No. CN201339060Y, and the TCO film is prepared by a high-energy sputtering process, which is also easily damaging to the active layer of the device.
Disclosure of Invention
In view of the above, an object of the present utility model is to provide a transparent conductive oxide thin film deposition apparatus that can reduce damage to an active layer of a device at the time of preparation of a transparent conductive oxide thin film.
The utility model adopts the technical proposal for solving the technical problems that:
the transparent conductive oxide film deposition equipment comprises a vacuum chamber, a hollow cathode ion gun arranged outside the vacuum chamber, and a vacuumizing system capable of vacuumizing the vacuum chamber, wherein a substrate bearing plate for placing a substrate and a focusing water-cooling crucible assembly arranged at the bottom of the vacuum chamber are arranged in the vacuum chamber; the hollow cathode ion gun is used as an electron emission source and is combined with the focusing water-cooled crucible assembly used as a positive electrode to form a discharge magnetic field so as to coat a substrate arranged on the substrate bearing plate.
In a preferred embodiment of the present utility model, the vacuum chamber is provided with a driving device capable of driving the substrate carrying plate to rotate, and the driving device includes a driving motor disposed on the vacuum chamber, and a rotating shaft connected between the driving motor and the substrate carrying plate.
In a preferred embodiment of the present utility model, a workpiece baffle is disposed in the vacuum chamber and below the substrate carrier plate, a rotating member is disposed on the vacuum chamber, and the workpiece baffle is disposed at the lower end of the rotating member.
In a preferred embodiment of the present utility model, an insulating member is provided between the rotating shaft and the vacuum chamber to separate them from each other.
In a preferred scheme of the utility model, the focusing water-cooling crucible assembly comprises a water-cooling crucible and a water-cooling focusing box, wherein a magnet capable of forming a magnetic field focusing interval and a coil capable of forming an electromagnetic field focusing interval are arranged in the water-cooling focusing box.
In a preferred embodiment of the present utility model, the water-cooled crucible is made of oxygen-free copper and stainless steel, and the water-cooled focusing box is made of stainless steel.
In a preferred scheme of the utility model, the focusing water-cooled crucible assembly is connected with the positive electrode of the power supply, and a resistor protection is arranged between the focusing water-cooled crucible assembly and the positive electrode of the power supply.
In a preferred scheme of the utility model, the vacuumizing system comprises a main pump capable of vacuumizing the vacuum chamber, a vacuumizing pipeline is arranged between the main pump and the vacuum chamber, a diaphragm valve and a gate valve are arranged on the vacuumizing pipeline, an air charging pipeline is arranged on the outer side of the vacuum chamber, and an air charging valve is arranged on the air charging pipeline.
In a preferred scheme of the utility model, the vacuumizing system comprises a mechanical pump connected with the vacuum chamber and the main pump respectively, a first connecting pipeline is arranged between the mechanical pump and the vacuum chamber, a second connecting pipeline is arranged between the mechanical pump and the main pump, a pre-vacuumizing valve is arranged on the first connecting pipeline, and a backing valve is arranged on the second connecting pipeline.
In a preferred embodiment of the present utility model, a vacuum gauge capable of measuring the vacuum degree in the vacuum chamber is provided outside the vacuum chamber.
The beneficial effects of the utility model are as follows: the utility model relates to a transparent conductive oxide film deposition device, which comprises a vacuum chamber module, a hollow cathode ion gun, a vacuumizing system and an argon gas guide pipe, wherein the hollow cathode arc discharge technology is utilized to ionize argon gas by hundred volts to generate cathode glow discharge and a large amount of hot electrons in a vacuum environment in the vacuum chamber, then the cathode glow discharge and the hot electrons are immediately converted into arc discharge, and high-density electron beams directionally bombard a film material under the action of an electric field and a deflection magnetic field to melt and evaporate the film material, and finally a film layer is deposited on a substrate.
Drawings
FIG. 1 is a schematic view of a transparent conductive oxide film deposition apparatus according to the present utility model;
FIG. 2 is a schematic view of a vacuum chamber module in a transparent conductive oxide film deposition apparatus according to the present utility model;
fig. 3 is a schematic view of a vacuum pumping system in a transparent conductive oxide thin film deposition apparatus according to the present utility model.
Detailed Description
The technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings.
Referring to fig. 1 to 3, a transparent conductive oxide thin film deposition apparatus includes a vacuum chamber module 1, the vacuum chamber module 1 includes a vacuum chamber 101, a substrate coating mechanism 102 disposed on the vacuum chamber 101, and a focusing water-cooled crucible assembly 103 disposed at the bottom of the vacuum chamber 101, a hollow cathode ion gun 104 is installed outside the vacuum chamber 101, and a vacuum pumping system 2 for evacuating the interior of the vacuum chamber 101, the substrate coating mechanism 102 includes a substrate carrying plate 112 disposed in the vacuum chamber 101 and used for placing a substrate. An argon protection system 3 is arranged outside the vacuum chamber 101, the argon protection system 3 comprises an argon generating source 301 arranged outside the vacuum chamber 101, a first argon gas guide pipe 302 arranged between the argon generating source 301 and the hollow cathode ion gun 104, and a second argon gas guide pipe 303 which is introduced into the bottom of the vacuum chamber 101 from the argon generating source, when the vacuum chamber 101 is vacuumized through the vacuumizing system 2, partial air (especially the air at the bottom of the vacuum chamber 101) can not be pumped out, and therefore, the second argon gas guide pipe 303 is introduced into the bottom of the vacuum chamber 101, the argon has higher density than the air, and the air is jacked up, so that the vacuumizing system 2 can basically pump out the air, thereby avoiding the reaction materials in the focusing water-cooled crucible assembly 103 from reacting with the air to influence the quality of the TCO film and protecting the focusing water-cooled crucible assembly 103 when the TCO film is prepared; meanwhile, under some special film preparation processes, argon needs to be introduced into the focusing water-cooled crucible assembly 103, so that the operation can be finished through the branch guide pipe 302, the universality and the practicability of the equipment are improved, and the first argon guide pipe 302 and the second argon guide pipe 303 are respectively provided with a switch valve.
Specifically, the hollow cathode ion gun 104 includes a water-cooled support, a cathode tantalum tube, a cathode radiation cap, a first auxiliary anode, a ring-shaped permanent magnet, a second auxiliary anode, and a large and small magnetic field coil, wherein the cathode tantalum tube as a cathode is an electron emission source, and further is combined with a focused water-cooled crucible assembly 103 evaporation source of a positive electrode below the vacuum chamber 101 to form a corresponding discharge magnetic field, so as to coat a substrate placed on the workpiece rotating mechanism 102.
In this solution, the substrate coating mechanism 102 further includes a driving device disposed on the vacuum chamber 101 and capable of driving the substrate carrying plate 112 to rotate, where the driving device includes a driving motor 114 disposed on the vacuum chamber 101 and a rotating shaft 111 connected between the driving motor and the substrate carrying plate 112, substrate brackets are disposed on two sides of the workpiece connecting plate 112, and the driving motor 114 is a speed reducing driving motor, so that the substrate carrying plate 112 is driven to rotate by this, so that the prepared TCO film is more uniform.
Preferably, the substrate coating mechanism 102 includes a workpiece baffle 113 disposed in the vacuum chamber 101 and below the substrate carrying plate 112, a rotating member 115 is disposed on the vacuum chamber 101, the workpiece baffle 113 is disposed at the bottom end of the rotating member 115, and the bottom of the workpiece connecting plate 112 is completely blocked by the workpiece baffle 113. The rotating member 115 may be connected to the workpiece baffle 113 through a connecting shaft provided thereon, and by manually rotating the upper end of the rotating member 115, the workpiece baffle 113 is rotated away from the workpiece connecting plate 112 and is not shielded, so that the substrate on the workpiece connecting plate 112 starts to be coated; of course, the rotating member 115 may be mechanically driven, and the motor may be used to drive the rotation of the connecting shaft. Thus, when the hollow cathode ion gun 104 and the focusing water-cooled crucible assembly 103 do not enter the working state, the baffle plate can effectively prevent the film material evaporated from the focusing water-cooled crucible assembly 103 from polluting the workpiece. Further, an insulating member for separating the rotation shaft 111 from the vacuum chamber 101 is provided between the rotation shaft and the vacuum chamber, and the insulating member may be an insulating collar made of plastic or silica gel.
In this embodiment, the focusing water-cooled crucible assembly 103 includes a water-cooled crucible 121 and a water-cooled focusing box 122, wherein the bypass conduit 302 is located above the water-cooled crucible 121 to introduce argon into the water-cooled crucible 121. Specifically, the water-cooled focusing box 122 is provided with a fan-shaped magnet capable of forming a magnetic field focusing region and a coil capable of forming an electromagnetic field focusing region, and the coil comprises a focusing coil power supply and a deflection coil. Wherein, the water-cooled crucible 121 is formed by vacuum brazing and welding oxygen-free copper and stainless steel; the water-cooled focusing box 122 is formed by welding stainless steel materials through argon arc welding.
In this embodiment, the focusing water-cooled crucible assembly 103 is connected to the positive electrode of the power supply, and has a resistor protection therebetween, so as to serve as an auxiliary anode of the water-cooled crucible 121, and serve to attract the electron beam and protect the water-cooled crucible 121.
In this scheme, the vacuumizing system includes a main pump 201 capable of vacuumizing the vacuum chamber 101, a vacuumizing pipe 212 is disposed between the main pump 201 and the vacuum chamber 101, and a diaphragm valve 203 and a gate valve 202 are disposed on the vacuumizing pipe 212; also, an air charging pipe 211 is provided outside the vacuum chamber 101, and an air charging valve 207 is provided on an air charging pipe 212, and the main pump 201 may be a CF200 molecular pump. Further, the vacuum pumping system further comprises a mechanical pump 204 connected with the vacuum chamber 101 and the main pump 201 respectively, a first connecting pipeline 213 is arranged between the mechanical pump 204 and the vacuum chamber 101, a second connecting pipeline 214 is arranged between the same mechanical pump 204 and the main pump 201, a pre-pumping valve 205 is arranged on the first connecting pipeline 213, and a pre-stage valve 206 is arranged on the second connecting pipeline 214.
In this embodiment, a vacuum gauge 208 is provided outside the vacuum chamber 101 to measure the vacuum degree of the vacuum chamber 101.
The working process of the transparent conductive oxide film deposition equipment is as follows:
the substrate is first attached to a carrier plate, which is secured to the substrate carrier of the workpiece connection plate 112, while a suitable amount of material to be coated is placed in the water-cooled crucible 121. The hatch door closing the vacuum chamber 101 opens the automatic vacuum pumping mode, and the mechanical pump 204, the pre-pumping valve 205, the backing valve 206, the gate valve 202 and the main pump 201 in the vacuum system are sequentially started to operate. After the pressure in the cavity of the vacuum chamber 101 is lower than 5 x 10 < -3 > Pa, the coating process can be ready to start.
The diaphragm valve 203 is opened to stabilize the pressure in the chamber of the vacuum chamber 101, and argon gas is introduced into the vacuum chamber 101 from the argon gas guide 301. After the pressure of the cavity of the vacuum chamber 101 is stable, the driving motor 114 is turned on to drive the workpiece connecting plate 112 to rotate, the focusing coil power supply, the deflection coil power supply and the water-cooling crucible focusing power supply are sequentially started, and the main power supply is turned on after all the three power supplies are confirmed to be turned on. When the normal glow, stable arc light and normal melting and evaporation of the film material in the vacuum chamber 101 are observed, the workpiece baffle 113 is opened to deposit a clean, firm and uniform film on the substrate.
The specific operation mode is as follows:
a clean 10cm x 10cm sodalime glass substrate was attached to a 16.6cm x 16.6cm area carrier plate that was mated with the workpiece connection plate 112, and the carrier plate was secured into the substrate holder of the workpiece connection plate 112. Specifically, a proper amount of IWO solid particles are put into the water-cooled crucible 121, and the bottom of the water-cooled crucible 121 is approximately fully covered. The door of the vacuum chamber 101 is closed, and then the automatic evacuation mode is started, and the mechanical pump 204, the pre-evacuation valve 205, the backing valve 206, the gate valve 202, and the main pump 201 in the evacuation system 2 are sequentially activated. After the cavity pressure is lower than 5X 10-3Pa, the diaphragm valve 203 is opened to stabilize the pressure in the cavity of the vacuum chamber 101, and then argon with the flow rate of 100ml/min is introduced through the argon gas guide pipe 301. After the pressure in the cavity of the vacuum chamber 101 is stable, the driving motor 114 is turned on, the workpiece connecting plate 112 is driven to rotate, the focusing coil power supply, the deflection coil power supply and the water-cooled crucible focusing power supply are sequentially turned on, and the main power supply is turned on after all the three power supplies are confirmed to be turned on. Specifically, the focus coil current, the deflection coil current, the water-cooled crucible focus current, and the main power supply current were set to 4.5A, 7.0A, 5.0A, and 40A, respectively. When the normal glow and stable arc light in the vacuum chamber 101 are observed and the IWO particles can be normally melted and evaporated, the workpiece baffle 113 is opened to start the coating process, the process time is set to 180s, and finally the IWO transparent conductive film with the thickness of 100nm and the sheet resistance of 20 ohm/sq can be obtained.
The above description is only a specific embodiment of the utility model and is not intended to limit the utility model in any way. The above embodiments are simply modified, replaced, etc. by those skilled in the art according to the technical substance of the present utility model, and still remain within the scope of the present utility model.
Claims (10)
1. The transparent conductive oxide film deposition equipment is characterized by comprising a vacuum chamber (101), a hollow cathode ion gun (104) arranged outside the vacuum chamber (101) and a vacuumizing system (2) capable of vacuumizing the inside of the vacuum chamber (101), wherein a substrate bearing plate (112) used for placing a substrate and a focusing water-cooling crucible assembly (103) arranged at the bottom of the vacuum chamber (101) are arranged in the vacuum chamber (101), an argon protection system (3) is arranged outside the vacuum chamber (101), and the argon protection system (3) comprises an argon gas generating source (301) arranged outside the vacuum chamber (101), a first argon gas guide pipe (302) arranged between the argon gas generating source (301) and the hollow cathode ion gun (104) and a second argon gas guide pipe (303) which is communicated with the bottom of the vacuum chamber (101) by the argon gas generating source; the hollow cathode ion gun (104) is used as an electron emission source and is combined with the focusing water-cooled crucible assembly (103) used as a positive electrode to form a discharge magnetic field so as to coat a substrate arranged on the substrate bearing plate (112).
2. The transparent conductive oxide film deposition apparatus according to claim 1, wherein the vacuum chamber (101) is provided with a driving device capable of driving the substrate carrying plate (112) to rotate, and the driving device comprises a driving motor (114) arranged on the vacuum chamber (101), and a rotating shaft (111) connected between the driving motor and the substrate carrying plate (112).
3. The transparent conductive oxide film deposition apparatus according to claim 2, wherein a workpiece baffle plate (113) is disposed in the vacuum chamber (101) and below the substrate carrying plate (112), a rotating member (115) is disposed on the vacuum chamber (101), and the workpiece baffle plate (113) is disposed at a lower end of a bottom end of the rotating member (115).
4. A transparent conductive oxide film deposition apparatus according to claim 2, wherein an insulating member is provided between the rotation shaft (111) and the vacuum chamber (101) to separate them.
5. The transparent conductive oxide film deposition apparatus according to claim 1, wherein the focusing water-cooled crucible assembly (103) comprises a water-cooled crucible (121) and a water-cooled focusing box (122), and a magnet capable of forming a magnetic field focusing region and a coil capable of forming an electromagnetic field focusing region are disposed in the water-cooled focusing box (122).
6. The transparent conductive oxide film deposition apparatus as claimed in claim 5, wherein the water-cooled crucible (121) is made of oxygen-free copper and stainless steel material, and the water-cooled focusing box (122) is made of stainless steel material.
7. The transparent conductive oxide film deposition apparatus as claimed in claim 1, wherein the focusing water-cooled crucible assembly (103) is connected to a positive electrode of a power source with a resistor protection therebetween.
8. The transparent conductive oxide film deposition apparatus according to any one of claims 1 to 7, wherein the vacuum pumping system (2) comprises a main pump (201) capable of evacuating the vacuum chamber (101), a vacuum pumping pipe (212) is arranged between the main pump (201) and the vacuum chamber (101), a diaphragm valve (203) and a gate valve (202) are arranged on the vacuum pumping pipe (212), an air charging pipe (211) is arranged on the outer side of the vacuum chamber (101), and an air charging valve (207) is arranged on the air charging pipe (211).
9. The transparent conductive oxide film deposition apparatus according to claim 8, wherein the vacuum pumping system (2) comprises a mechanical pump (204) connected with the vacuum chamber (101) and the main pump (201), a first connecting pipeline (213) is arranged between the mechanical pump (204) and the vacuum chamber (101), a second connecting pipeline (214) is arranged between the mechanical pump (204) and the main pump (201), a pre-pumping valve (205) is arranged on the first connecting pipeline (213), and a backing valve (206) is arranged on the second connecting pipeline (214).
10. The transparent conductive oxide film deposition apparatus according to claim 9, wherein a vacuum gauge (208) capable of measuring the degree of vacuum in the vacuum chamber (101) is provided outside the vacuum chamber (101).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202320295611.8U CN219315043U (en) | 2023-02-21 | 2023-02-21 | Transparent conductive oxide film deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202320295611.8U CN219315043U (en) | 2023-02-21 | 2023-02-21 | Transparent conductive oxide film deposition equipment |
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| CN219315043U true CN219315043U (en) | 2023-07-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117758208A (en) * | 2023-12-26 | 2024-03-26 | 聚灿光电科技（宿迁）有限公司 | Coarsened ITO film layer preparation device and preparation method |
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2023
- 2023-02-21 CN CN202320295611.8U patent/CN219315043U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117758208A (en) * | 2023-12-26 | 2024-03-26 | 聚灿光电科技（宿迁）有限公司 | Coarsened ITO film layer preparation device and preparation method |
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