CN112877662B - Magnetron sputtering equipment - Google Patents

Magnetron sputtering equipment Download PDF

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Publication number
CN112877662B
CN112877662B CN202110040061.0A CN202110040061A CN112877662B CN 112877662 B CN112877662 B CN 112877662B CN 202110040061 A CN202110040061 A CN 202110040061A CN 112877662 B CN112877662 B CN 112877662B
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cathode
anode
sputtering
gas supply
magnetron sputtering
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CN112877662A (en
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黄旭
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TCL China Star Optoelectronics Technology Co Ltd
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TCL China Star Optoelectronics Technology Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The application discloses magnetron sputtering equipment, it mainly includes the sputtering chamber, the cathode part, the anode portion, magnetic pole portion and air feed portion, cathode part and anode portion set up in the sputtering chamber, magnetic pole portion is used for forming electron magnetic deflection field between cathode part and anode portion, air feed portion communicates with the sputtering chamber in order to provide process gas, when carrying out the sputtering operation, cathode part and anode portion are relative and parallel arrangement, in the region between cathode part and the anode portion, the process gas concentration in the region that is close to anode portion is higher than the process gas concentration in the region that is close to cathode portion, this magnetron sputtering equipment has that whole sputter rate is high, the coating film effect is ideal, harm little advantage to the base plate.

Description

Magnetron sputtering equipment
Technical Field
The invention relates to the technical field of magnetron sputtering, in particular to magnetron sputtering equipment.
Background
Magnetron sputtering belongs to the Physical Vapor Deposition (PVD) technology, and is widely applied to various fields as a coating method, for example, in the field of microelectronics, and the magnetron sputtering technology is one of important means for producing products such as integrated circuits, display panels, thin-film solar cells and the like. In the production process of display panels, magnetron sputtering techniques can be used to deposit metal film layers on substrates. The principle of preparing the film by adopting the magnetron sputtering technology is as follows: under the action of a sputtering power supply, forming an electric field in the sputtering chamber, wherein the electric field ionizes process gas atoms (such as argon atoms) in the sputtering chamber to generate plasma, and the plasma contains positively charged ions (such as argon ions) and electrons; the sputtering power supply endows the surface of the target with negative voltage, so that under the action of the negative voltage, positive ions are accelerated to fly to the target and bombard the target, the target releases atoms after being bombarded, and the atoms are deposited on the surface of the substrate to form a film layer; the magnetic field is typically used to change the direction of motion of the electrons to constrain and lengthen the trajectory of the electrons, thereby enhancing the effective bombardment of the target.
At present, in order to improve the light Emitting efficiency of an organic light-Emitting Diode (OLED) display panel, a cathode of an OLED is converted from a conventional single-layer structure into a multi-layer structure, where the multi-layer structure includes a metal oxide layer and a metal layer, and the conventional single-layer structure is mainly manufactured by an evaporation process, but the manufacturing of the OLED cathode having the multi-layer structure by the evaporation process has problems of high cost and low efficiency, so that the industry tends to use a magnetron sputtering process instead of the evaporation process to manufacture the OLED cathode having the multi-layer structure.
However, it has been found in the prior art that the metal layer and/or the metal oxide layer prepared on the organic light-emitting layer by using the existing magnetron sputtering apparatus may cause damage to the organic light-emitting layer, for example: tris (8-hydroxyquinoline) aluminium (Alq)3) Is an OLEDOptical material and electron transport material, for Alq3Argon ion bombardment at low energy (100ev) followed by X-ray Photoelectron Spectroscopy (XPS) showing Alq Spectroscopy3The N-Al bond and the C-O-Al bond of (A) are broken, and there occur problems that a quenching effect and an OLED are broken, and further, as the density of argon ions is changed from 6.0X 1013ions/cm2Lifting to 8.0X 1014ions/cm2，Alq3Each chemical bond within has a different degree of disruption. The reason for this is that target atoms generated by sputtering fly to the substrate surface at a high speed to form a film, and the high-energy target atoms damage the substrate surface.
Disclosure of Invention
Aiming at the defects of the prior art, the embodiment of the application provides magnetron sputtering equipment, and aims to solve the problem that the existing magnetron sputtering equipment is damaged due to the fact that a film is coated on an organic light emitting layer of an OLED.
The application provides a magnetron sputtering device, magnetron sputtering device includes:
a sputtering chamber;
a cathode portion disposed in the sputtering chamber;
an anode portion provided in the sputtering chamber;
a magnetic pole section including a first magnetic pole and a second magnetic pole of opposite polarities to form an electron deflection magnetic field between the cathode section and the anode section; and
a gas supply portion communicating with the sputtering chamber to supply a process gas;
wherein, when performing a sputtering operation, the cathode section is disposed opposite and parallel to the anode section, and in a region between the cathode section and the anode section, a process gas concentration of a region near the anode section is higher than a process gas concentration of a region near the cathode section.
In some embodiments of the present application, when performing a sputtering operation, a process gas concentration of a region between the anode portion and the cathode portion decreases stepwise in a direction in which the anode portion is directed toward the cathode portion.
In some embodiments of the present application, the gas supply portion includes a plurality of gas supply ports provided in the sputtering chamber, and when performing sputtering operation, the anode portion is directed in a direction of the cathode portion, and a process gas flow rate of the plurality of gas supply ports is stepwise decreased progressively.
In some embodiments of the present application, a cross-sectional area of the gas supply port is stepwise decreased in a direction in which the anode portion is directed to the cathode portion when a sputtering operation is performed.
In some embodiments of the present application, the gas supply part includes a plurality of gas supply ports provided on the sputtering chamber, the plurality of gas supply ports are divided into a first gas supply port having a first cross-sectional area and a second gas supply port having a second cross-sectional area, and the first cross-sectional area is greater than the second cross-sectional area; when a sputtering operation is performed, the first gas supply port is close to the anode portion.
In some embodiments of the present application, the cathode portion includes:
a cathode plate; and
the target is arranged on the cathode plate.
In some embodiments of the present application, the magnetic pole portion is disposed adjacent to the cathode portion.
In some embodiments of the present application, the anode part includes: and the base station is used for bearing the substrate to be sputtered.
In some embodiments of the present application, the magnetron sputtering apparatus further comprises: and the driving component is in driving connection with the base platform so as to drive the base platform to move.
In some embodiments of the present application, the magnetron sputtering apparatus further comprises: the vacuum pumping system is communicated with the sputtering chamber; the vacuum pumping system comprises an air pump and a pumping hole, wherein the pumping hole is formed in the sputtering chamber, and the air pump is communicated with the pumping hole.
The application provides a magnetron sputtering equipment, when carrying out the sputtering operation, construct gradient formula process gas atmosphere field through the region between this magnetron sputtering equipment's anode portion and negative pole portion, make the region that is close to the target have low atmospheric pressure in order to realize high sputtering rate, the region that is close to the treating coating film surface of base plate has high atmospheric pressure in order to realize high barrier rate, the target atom that the sputtering produced is lower at the treating coating film surface deposit kinetic energy of base plate, thereby effectively reduce the damage to the base plate, especially reduce the damage to organic rete on the base plate, this magnetron sputtering equipment has that whole sputtering rate is high, the coating film effect is ideal, little advantage is damaged to the base plate.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments will be briefly introduced below.
Fig. 1 is a schematic structural diagram of a magnetron sputtering apparatus provided in an embodiment of the present application when a sputtering operation is not performed.
Fig. 2 is a schematic structural diagram of a magnetron sputtering device according to an embodiment of the present application when performing a sputtering operation.
Fig. 3 is a schematic view of the distribution of the gas supply ports on the top surface in fig. 1 and 2.
Figure 4 is a schematic view of the distribution of the gas supply ports on the top surface as provided by another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
An embodiment of the present application provides a magnetron sputtering apparatus, as shown in fig. 1 and fig. 2, the magnetron sputtering apparatus 100 mainly includes: sputtering chamber 1, negative pole portion 2, anode portion 3, magnetic pole portion 4, air feed portion 5, vacuum pumping system 6 and drive assembly 7, negative pole portion 2 and anode portion 3 set up respectively in sputtering chamber 1, and magnetic pole portion 4 sets up adjacent with sputtering chamber 1, and air feed portion 5 and vacuum pumping system 6 are linked together with sputtering chamber 1 respectively, and drive assembly 7 is connected with anode portion 3 drive.
The sputtering chamber 1 is a reaction chamber in which the substrate coating is performed in the magnetron sputtering apparatus 100. The shape and size of the sputtering chamber 1 are not particularly limited and can be selected according to actual needs.
The cathode portion 2 mainly includes a cathode plate 21 and a target 22, the target 22 is disposed on the cathode plate 21, and the cathode plate 21 and the target 22 are electrically connected. The material of the cathode plate 21 may be, for example, copper (Cu) or other conductive material. It should be noted that the cathode plate 21 and the target 22 can be attached to each other, and the two are electrically connected directly; the cathode plate 21 and the target 22 may not be attached to each other, other structural members may be disposed between the cathode plate 21 and the target 22, and the cathode plate 21 and the target 22 are electrically connected through a medium. In the present embodiment, it is preferable that the cathode portion 2 is fixed to an inner wall of the sputtering chamber 1, and the cathode plate 21 and the target 22 are attached.
The anode portion 3 includes an anode plate 31 and a base 32, and the base 32 is provided on the anode plate 31. The material of the anode plate 31 may be copper (Cu), for example, or other conductive material. The base 32 is used for bearing the substrate 8 to be sputtered, and the base 32 is provided with a fixing structure for limiting the position of the substrate 8 on the base 32, so that the influence of the position change of the substrate 8 in the sputtering process on the coating effect is avoided. The base 32 can also heat the substrate 8.
Referring to fig. 1, when the sputtering operation is not performed, the anode portion 3 is parallel to another inner wall of the sputtering chamber 1, such that the cathode portion 2 and the anode portion 3 form an included angle of 90 degrees, and the side of the base platform 32 for placing the substrate 8 faces upward. With reference to fig. 2, during the sputtering operation, under the driving action of the driving element 7, the anode portion 3 rotates clockwise 90 degrees to be opposite to and parallel to the cathode portion 2, and the substrate 8 is opposite to the target 22; the distance D between the substrate 8 and the target 22 is kept constant throughout the sputtering process, and the value of D can be set to an optimum value for obtaining desired process effects such as film uniformity, deposition rate, etc., according to specific needs. The drive assembly 7 may be, for example, a motor.
It should be noted that the positions of the cathode portion 2 and the anode portion 3 in the sputtering chamber 1 are not particularly limited, and only need to satisfy that, when a sputtering operation is performed, the cathode portion 2 and the anode portion 3 are arranged oppositely and in parallel, and the target 22 and the surface to be coated of the substrate 8 are arranged oppositely, so that target atoms are released after the target 22 is bombarded by plasma, and the target atoms fly to the substrate 8 and deposit to form a film layer on the surface to be coated of the substrate 8.
It can be understood by those skilled in the art that the magnetron sputtering apparatus 100 provided by the embodiment of the present application should further include a sputtering power source (not shown) for forming an electric field in the sputtering chamber 1. Specifically, the output terminal of the sputtering power supply is electrically connected to the cathode plate 21, and the anode plate 31 is grounded. The sputtering power supply may include a direct current power supply, an intermediate frequency power supply, or a radio frequency power supply.
In the embodiment of the present application, the target 22 is made of a conductive material, such as metal, metal oxide, etc., the sputtering power source is a dc power source, the cathode plate 21 and the target 22 are tightly attached, and the sputtering power source provides dc voltage and current to the loop formed by the cathode plate 21 and the anode plate 31. Due to the electrical conduction between the cathode plate 21 and the target 22, the sputtering power source can output sputtering power to the target 22, so that the plasma formed in the sputtering chamber 1 bombards the target 22, and the target 22 can transfer positive charges obtained from the ion bombardment process to the cathode plate 21 in close contact therewith.
The magnetic pole part 4 comprises a chamber 41, a first magnetic pole 42, a second magnetic pole 43 and a magnetic shoe 44, the chamber 41 is arranged adjacent to the sputtering chamber 1, and a common wall is arranged between the chamber 41 and the sputtering chamber 1, and the cathode part 2 is fixed on the common wall; the first magnetic pole 42, the second magnetic pole 43 and the magnetic shoe 44 are all disposed in the chamber 41, and the first magnetic pole 42 and the second magnetic pole 43 are disposed on the magnetic shoe 44 at intervals. The first and second magnetic poles 42 and 43 are opposite in polarity to form an electron deflecting magnetic field between the cathode portion 2 and the anode portion 3, thereby changing the moving direction of electrons in the plasma to confine and elongate the moving trajectory of the electrons, thereby enhancing effective bombardment of the target 22. The first magnetic pole 42 can be an N pole, and the corresponding second magnetic pole 43 can be an S pole; the first magnetic pole 42 may be S pole and the corresponding second magnetic pole 43 may be N pole
The position of the magnetic pole portion 4 is not particularly limited, and the magnetic pole portion 4 may be provided outside the sputtering chamber 1 or inside the sputtering chamber 1, so long as the magnetic pole portion 4 is close to the cathode portion 2. Further, the magnetic pole portion 4 includes at least two magnetic poles with opposite polarities, but the number of the magnetic poles is not particularly limited, and the magnetic pole portion 4 may include more than three magnetic poles with opposite polarities of adjacent magnetic poles, for example: magnetic pole portion 4 includes first N utmost point magnetic pole, first S utmost point magnetic pole and the second N utmost point magnetic pole that sets up in proper order, as again: the magnetic pole portion 4 includes a first N-pole magnetic pole, a first S-pole magnetic pole, a second N-pole magnetic pole, a second S-pole magnetic pole, a third N-pole magnetic pole, and a third S-pole magnetic pole, which are sequentially disposed.
The gas supply portion 5 includes a plurality of gas supply ports 51 and a plurality of gas transmission pipes 52, the plurality of gas supply ports 51 are disposed on the top surface 11 of the sputtering chamber 1, and each of the gas supply ports 51 is connected to a gas generating device (not shown) through the gas transmission pipe 52, so that a process gas generated by the gas generating device enters the sputtering chamber 1 through the gas transmission pipe 52 and the gas supply ports 51, and the process gas may be, for example, an inert gas such as argon (Ar), nitrogen (N), helium (He), or the like.
When a sputtering operation is performed, the cathode section 2 and the anode section 3 are arranged in parallel to face each other with the ceiling surface 11 as a projection surface, the forward projection of the substrate 8 to be sputtered on the ceiling surface 11 is a first projection 81, the forward projection of the target 22 on the ceiling surface 11 is a second projection 221, and the plurality of air supply ports 51 are located between the first projection 81 and the second projection 221. The number and shape of the air supply ports 51 are not particularly limited, and may be selected according to actual needs.
During the sputtering operation, the gas concentration in the region between the cathode section 2 and the anode section 3 is not uniform, and the process gas concentration in the region near the anode section 3 is greater than the process gas concentration in the region near the cathode section 2, and this is designed to: under the specific conditions of temperature and volume, the pressure intensity of the process gas in the area close to the cathode part 2 is low, the dissociation effect of the process gas is ideal, the maximum dissociation degree can be achieved, and the effective bombardment of positive ions generated by the dissociation of the process gas on the target 22 is enhanced, so that the current density on the surface of the target 22 is improved, the voltage on the surface of the target 22 is reduced, and the kinetic energy or momentum of target atoms released after bombardment is reduced; the process gas pressure in the region close to the anode portion is higher, so that the mean free path of the target atoms flying to the substrate 8 is reduced, and the target atoms can fly to the substrate 8 at a lower speed after transferring part of their momentum to the process gas atoms (such as argon atoms) and deposit a film on the surface to be coated of the substrate 8, thereby effectively reducing the damage to the substrate 8, for example, the damage to the organic light emitting layer of the OLED substrate can be reduced.
Based on this, the cross-sectional area of the gas supply port 51 near the anode portion 3 is larger than the cross-sectional area of the gas supply port 51 near the cathode portion 2, and the flow rate of the process gas corresponding to the gas supply port 51 near the anode portion 3 is larger than the flow rate of the process gas corresponding to the gas supply port 51 near the cathode portion 2, so that the region between the cathode portion 2 and the anode portion 3 has at least two process gas concentrations, and the process gas concentration in the region near the anode portion 3 is larger than the process gas concentration in the region near the cathode portion 2.
In one embodiment of the present application, as shown in fig. 2 and 3, the plurality of air supply ports 51 are arranged in a matrix form in a plurality of rows and columns on the top surface 11, the air supply ports 51 have a circular cross-section, and the cross-sectional area of each air supply port 51 in each column is the same. In the direction H of the first projection 81 directed towards the second projection 221, the cross-sectional area of the respective gas supply opening 51 in each row decreases stepwise, so that in the direction of the anode portion 3 directed towards the cathode portion 2, the process gas concentration in the region between the anode portion 3 and the cathode portion 2 decreases stepwise, i.e.: the region between the anode section 3 and the cathode section 2 is formed with a gradient atmosphere field of process gas.
In another embodiment of the present application, as shown in fig. 4, the plurality of air supply ports 51 are arranged in a matrix form in a plurality of rows and columns on the top surface 11, the air supply ports 51 have a circular cross-section, and the cross-sectional area of each air supply port 51 in each column is the same. The plurality of gas supply ports 51 are divided into a first gas supply port 511 having a first cross-sectional area and a second gas supply port 512 having a second cross-sectional area, and the first cross-sectional area is larger than the second cross-sectional area. The three rows of air supply ports adjacent to the first projection 81 correspond to the first air supply ports 511, and the six rows of air supply ports adjacent to the second projection 221 correspond to the second air supply ports 512. Thus, when performing a sputtering operation, the region between the cathode section (not shown) and the anode section (not shown) has only two process gas concentrations, and the process gas concentration near the anode section is greater than the process gas concentration near the cathode section, and the gas pressure in the region near the anode section is greater than the gas pressure in the region near the cathode section under certain temperature and volume conditions.
With continued reference to fig. 1 and 2, a vacuum pumping system 6 is used to pump gases within the sputtering chamber 1 to create a background vacuum for the sputtering chamber 1 to maintain a process gas atmosphere field within the sputtering chamber 1. The vacuum pumping system 6 comprises a first air pump 61, a second air pump 62, a first pumping hole 63 and a second pumping hole 64, wherein the first pumping hole 63 and the second pumping hole 64 are arranged on the bottom 12 of the sputtering chamber 1 at intervals, the first pumping hole 63 is communicated with the first air pump 61, and the second pumping hole 64 is communicated with the second air pump 62. The first air pump 61 can produce a first vacuum degree for the sputtering chamber 1, the second air pump 61 can produce a second vacuum degree for the sputtering chamber 1, the second vacuum degree is higher than the first vacuum degree, and in an actual sputtering process, the first air pump 61 or the second air pump 62 can be selectively started according to actual needs to meet different vacuum degree requirements.
It should be noted that the number, type and position of the air pumps in the vacuum pumping system 6, and the number, shape and position of the pumping ports are not specifically limited, and can be selected according to actual needs.
The process of the magnetron sputtering device 100 according to the embodiment of the present application for performing the coating operation is as follows:
s1, placing the substrate 8 to be coated on the base table 32, wherein the surface of the substrate 8 to be coated faces upwards;
s2, starting the driving assembly 7 to drive the anode part 3 to rotate 90 degrees clockwise, so that the anode part 3 is opposite to and parallel to the cathode part 2, and the surface to be coated of the substrate 8 is opposite to the target 22;
s3, starting the vacuum pumping system 6 to enable the sputtering chamber 1 to have a preset vacuum degree;
s4, introducing process gas into the sputtering chamber 1, so that a process gas atmosphere field is formed in the region between the anode part 3 and the cathode part 2, and the concentration of the process gas in the region close to the anode part 3 is higher than that in the region close to the cathode part 2;
s5, the sputtering power is turned on, so that a loop is formed between the anode portion 3 and the cathode portion 2 to perform the sputtering process.
Specifically, under the action of the sputtering power supply, an electric field is formed between the anode portion 3 and the cathode portion 2, and the electric field ionizes process gas atoms (e.g., argon atoms) in the sputtering chamber to generate plasma, which contains positively charged ions (e.g., argon ions) and electrons. The sputtering power supply gives a negative voltage to the surface of the target 22, and under the action of the negative voltage, the positive ions accelerate to fly to the target 22 and bombard the target 22, target atoms are released after the target 22 is bombarded, and the target atoms move towards the substrate 8 and are finally deposited on the surface to be coated of the substrate 8 to form a film. For the magnetron sputtering apparatus 100 of the embodiment of the present application, a gradient process gas atmosphere field is configured in a region between the anode portion 3 and the cathode portion 2, a region close to the target 22 has a low gas pressure to achieve a high sputtering rate, a region close to the surface to be coated of the substrate 8 has a high gas pressure to achieve a high blocking rate, kinetic energy of deposition of target atoms generated by sputtering on the surface to be coated of the substrate 8 is low, so as to reduce damage to the substrate 8, and particularly reduce damage to an organic film layer on the substrate 8, and the magnetron sputtering apparatus 100 has the advantages of high overall sputtering rate, ideal coating effect, and small damage to the substrate.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and a part which is not described in detail in a certain embodiment may refer to the detailed descriptions in the other embodiments, and is not described herein again.
The magnetron sputtering apparatus provided in the embodiments of the present application is described in detail above, and the principles and embodiments of the present invention are explained herein by using specific examples, and the above description of the embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (10)

1. A magnetron sputtering apparatus, characterized in that the magnetron sputtering apparatus comprises:
a sputtering chamber;
a cathode portion disposed in the sputtering chamber;
an anode portion provided in the sputtering chamber;
a magnetic pole section including a first magnetic pole and a second magnetic pole of opposite polarities to form an electron deflection magnetic field between the cathode section and the anode section; and
a gas supply portion communicating with the sputtering chamber to supply a process gas;
wherein, when performing a sputtering operation, the cathode section is disposed opposite and parallel to the anode section, and in a region between the cathode section and the anode section, a process gas concentration of a region near the anode section is higher than a process gas concentration of a region near the cathode section.
2. The magnetron sputtering apparatus according to claim 1, wherein a process gas concentration of a region between the anode portion and the cathode portion is stepwise decreased in a direction in which the anode portion is directed toward the cathode portion when performing a sputtering operation.
3. The magnetron sputtering apparatus according to claim 2, wherein the gas supply portion includes a plurality of gas supply ports provided on the sputtering chamber, and a flow rate of the process gas of the plurality of gas supply ports is stepwise decreased in a direction in which the anode portion is directed toward the cathode portion when sputtering operation is performed.
4. The magnetron sputtering apparatus according to claim 3, wherein a cross-sectional area of the gas supply port is stepwise decreased in a direction in which the anode portion is directed toward the cathode portion when a sputtering operation is performed.
5. The magnetron sputtering apparatus according to claim 1, wherein the gas supply portion includes a plurality of gas supply ports provided on the sputtering chamber, the plurality of gas supply ports being divided into a first gas supply port having a first cross-sectional area and a second gas supply port having a second cross-sectional area, and the first cross-sectional area being larger than the second cross-sectional area; when a sputtering operation is performed, the first gas supply port is close to the anode portion.
6. The magnetron sputtering apparatus according to any one of claims 1 to 5, wherein the cathode portion includes:
a cathode plate; and
the target is arranged on the cathode plate.
7. The magnetron sputtering apparatus according to claim 6, wherein the magnetic pole portion is disposed adjacent to the cathode portion.
8. The magnetron sputtering apparatus according to any one of claims 1 to 5, wherein the anode portion includes: and the base station is used for bearing the substrate to be sputtered.
9. The magnetron sputtering apparatus of claim 8, further comprising: and the driving component is in driving connection with the base platform so as to drive the base platform to move.
10. The magnetron sputtering apparatus according to any one of claims 1 to 5, further comprising: the vacuum pumping system is communicated with the sputtering chamber; the vacuum pumping system comprises an air pump and a pumping hole, wherein the pumping hole is formed in the sputtering chamber, and the air pump is communicated with the pumping hole.
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