CN1380439A - Hall type ion auxiliary evaporation source - Google Patents
Hall type ion auxiliary evaporation source Download PDFInfo
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- CN1380439A CN1380439A CN 02116688 CN02116688A CN1380439A CN 1380439 A CN1380439 A CN 1380439A CN 02116688 CN02116688 CN 02116688 CN 02116688 A CN02116688 A CN 02116688A CN 1380439 A CN1380439 A CN 1380439A
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Abstract
The Hall type ionic auxiliary evaporator source is formed from cathode filament, anode, gas supply system and magnetic circuit, etc. It is characterized by that the evaporator source is mounted on a vacuum chamber wall which is not described in detail by means of flange back plate, in the upper portion of the evaporator source the cathode filament capable of transmitting thermal electronics is mounted, said filament is insulated from ion source and other component by means of ceramic partition insulator, in the lower portion of discharge chamber the anode is mounted, on the anode a crucible for loading membrane material is placed, the bottom portion of said crucible is equipped with a water cooling chamber, and said anode is connected with lower gas-distributing plate by means of screw, and on the gas-distributing plate the ring gas-distributing channel can be formed.
Description
Technical field:
The invention belongs to vacuum coating film equipment a kind of Hall type ion auxiliary evaporation source particularly is provided
Background technology:
Tradition evaporation coating device is with resistance or electron beam coating materials to be heated to vaporization temperature under vacuum condition, makes its evaporation and be deposited on to form film on the substrate to reach the purpose of plated film.Because the energy that is evaporated the coating materials atom is low, poor adhesive force, the density of institute's coatings are low, and the character of film is affected by environment greatly, easily come off, instability.In addition, during electron beam evaporation, the grid voltage of electron beam gun is 6000-10000V, causes the electrion sparking easily, influences the quality of film.
In order to lower the operating voltage of evaporation source, avoid the sparking of electron beam gun electrion, invention hollow cathode type evaporation source patents such as Joseph D.Zeren, " SELF-CONTAINED HOT-HOLLOWCATHODE GUN SOURCE ASSEMBLY ", United States Patent (USP), 4620081, its main contents as shown in Figure 1, hollow cathode type evaporation source 1 partly is made up of crucible 7,8, deflection pole, solenoid 2, hollow cathode 3 and horizontal deflection coil 4 etc.
The top of evaporation source is a crucible body, constructs two or more crucibles 7,8 in the above, is side magnetic poles (be parallel to drawing, area covers whole evaporation source) made from high permeability material in the evaporation source both sides, forms the deflection magnetic circuit with solenoid 2.Solenoid 2 produces magnetic line of force, by the magnetic field of magnetic pole generation in unspecified both sides perpendicular to drawing.The electron beam 6 that hollow cathode 3 produces deflects under the effect in magnetic field, project in the crucible 7, the coating materials in the crucible is heated by electron beam, when the power density of electron beam reaches certain value, coating materials evaporation in the crucible, its atom or atomic group are deposited on and are formed film on plating substrate or the workpiece.
In the front portion of evaporation source electron beam is installed and is moved horizontally coil 4 and magnetic circuit 5, adjust its magneticstrength, can change the front and back position of electron beam, electron beam spot is changed between crucible 7 or crucible 8, can be coated with the multilayer film of differing materials like this.
In order to guarantee hollow cathode type evaporation source works better, crucible body and hollow cathode must effectively be cooled off.
The hollow cathode type evaporation source is that with the key distinction in electron gun evaporation source the kinetic energy of electronics is different.The sparking voltage of hollow cathode is below 100 volts, the just thermoelectron of generation, and kinetic energy is very low, if make the coating materials evaporation in the crucible, main line by the increase electron beam is generally in 50-500 ampere scope.And the electron accelerating voltage in electron gun evaporation source is in the 6000-10000 volt range, so electronics has very high kinetic energy, and the line of electron beam can make the coating materials rapid evaporation less than 2 amperes like this.
No matter above which kind of evaporation source, coating materials is that the form with atom or atomic group is evaporated, because atom or atomic group do not have electric charge, so apply bias voltage on by plating substrate or workpiece, to its not effect, promptly can not increase the kinetic energy of atom or atomic group by bias voltage.For this reason, improve character such as adhesion of thin film and density by the method evaporation atom of heated substrate or workpiece or the energy of atomic group in case of necessity.Yet when the fusing point of substrate is lower, as CR39 resin eyeglass etc., the effect of plated film is difficult to meet the demands.
For the sticking power, the density that increase evaporation coating and improve its physical properties, in the electron beam evaporation process, use ion source that substrate is plated before and online bombardment, realize cleaning before the plating and the purpose of ion assisted deposition.Now a kind of ion source that generally uses is the patent of at first being invented the end hall ion source by Kaufman, " END-HALL ION SOURCE ", U.S. Patent number, 4862032, its major technique thes contents are as follows:
End hall ion source 20 by the negative electrode 22 (electron source that comprises filament, hollow cathode or other types) of emitting electrons, receive electronics and launch ionic anode 25, magnetic circuit 26 and gas distribution system 21 and form.Magnetic circuit forms magnetic field as shown in Figure 2 in the anode discharge district, magnetic line of force is sent through region of discharge by the magnetic pole of negative electrode bottom and enters top pole 27.In ion source when work,, working gas (as argon gas) and reactant gases (as oxygen) are fed in the anode discharge district 24 by qi-emitting hole 21.Meanwhile, cathode filament is heated to the thermal electron emission temperature, and anode is subjected to positive potential.Under effect of electric field, the portions of electronics of cathode filament emission bumps with gas atom or molecule in region of discharge along the mode anode migration of magnetic line of force with spiral motion, and with its ionization.The electronics that produces in the ionization process continues the anode migration, form plasma body ejaculation ion source after the portions of electronics neutralization that the ion that produces will be accelerated and produce with cathode filament under the effect of Hall field, plasma body with certain energy directly bombards substrate and plates preceding cleaning, or bombardment film surface and film surface atom carry out energy exchange and carry out Ion Aided Film Coating.
Summary of the invention
The invention provides the evaporation source with ionization function, the atom of evaporation or molecule and ion bump and carry out energy exchange, obtain higher-energy, thereby increase adhesion of thin film and density etc.
This evaporation source can be used for plating preceding cleaning, when being coated with non-metallic film with the metal coating materials, can be with in the direct feed-in evaporation source of reactant gases and make its ionization, thus react plated film, increase level of response.
The present invention is made up of parts such as cathode filament 31, anode 32, airing system, magnetic circuits, and evaporation source is installed on the vacuum-chamber wall by flange backboard 36.
Be equipped with on the top of evaporation source and can launch thermionic cathode filament 31, filament can have the material manufacturing of high thermal electron emission rate with tungsten, tantalum etc., and filament is by ceramic insulation pad 37 and the insulation of ion source miscellaneous part.
In discharge chamber 38 bottoms anode 32 has been installed, is constructed the crucible 39 that loads coating materials on anode, crucible bottom has water cooling chamber 40, and anode is connected with the air distribution plate 42 of bottom by bolt 41.On air distribution plate, construct ring-like cloth air drain 43, have along the equally distributed air vent 44 of circumference at cloth air drain top.Working gas (as argon gas) and reactant gases (as oxygen) are entered in the ring shaped slot by air-supply duct 33, then by air vent along the air feed in discharge chamber of direction shown in the figure.In addition, on air distribution plate, also construct the water-in 34 and the water outlet 35 of water coolant.Water coolant enters into cooling trough by inlet channel, is flowed out by water outlet after circulation and anode heat exchange, and is sufficiently cooled to guarantee crucible, avoids crucible and other parts to be burnt.Overheated in order to prevent outer magnetic pole and top pole from being bombarded, can carry out water-cooled to it, as shown in Figure 3, the top pole superstructure has gone out water-cooling groove 51, and feeding recirculated water in water-cooling groove can effectively cool off magnetic pole.
In the bottom of air distribution plate 42 is insulating washer 46 and metal washer 45, and their effect is that magnet 48 can be placed in maintenance air distribution plate and the space of carrying on the back 47 of magnetic poles, and makes anode 32 and air distribution plate 42 and 36 insulation of flange backboard.
The magnetic circuit of evaporation source is made up of back of the body magnetic pole 47, magnet 48, outer magnetic pole 49 and top pole 50, and the Distribution of Magnetic Field that this magnetic circuit forms in discharge chamber as shown in Figure 3.The Distribution of Magnetic Field that this magnetic circuit forms in discharge chamber can converge in the crucible electronics, is 0.02 to 0.08T (tesla) at crucible surface magnetic field magnetic induction density vertically.
Under above-mentioned magneticstrength, establish electricity that electronics is parallel to magnetic field and lead and be σ
∥, lead perpendicular to the electricity in magnetic field and to be σ
⊥, then
σ
∥/σ
⊥＝?(ω/υ)
2
Here ω is an electron gyro-frequency, and υ is the electronic impact probability.Have according to the female diffusion model of glass:
σ
∥/σ
⊥＝256，
Be σ
∥＞＞σ
⊥
This shows that the electricity of electronics in magnetic field led has directivity, be parallel to the magnetic field electricity and lead very greatly that resistance is very little, and perpendicular to magnetic field, it is very little that electricity is led, resistance is very big.DISTRIBUTION OF MAGNETIC FIELD has decisive influence to the migratory direction of electronics like this, and magnetic line of force will produce strong constraint to electronic motion, and electronics is moved in the mode of circling round along magnetic line of force.
In evaporation source region of discharge of the present invention, the magnetic line of force that top pole 50 is sent is assembled to magnet 48 tops, forms taper and focuses on shape magnetic field.In such magnetic field, the electronics of being launched by cathode filament 31 will converge to crucible 39 along magnetic line of force, and the electronics that is produced with the gas atom collision in moving process forms the stronger electron beam directive crucible of density, the coating materials in the heating crucible.
The principle of work of evaporation source is as follows:
At first vacuum chamber is evacuated to background pressure (for example 5 * 10
-3Pa), working gas is fed air-supply duct, make the pressure of discharge chamber reach geseous discharge pressure (for example 2 * 10
-1Pa).Cathode filament is subjected to ground potential, and anode imposes positive voltage, and negative electrode and anode formation loop.Meanwhile, the hot-cathode filament is applied direct current or alternating current, make it to be heated to the thermal electron emission temperature, after a great deal of thermal electron emission, thermoelectron will move to crucible in the mode of spiral motion along magnetic line of force under effect of electric field.Electronics and gas atom or molecule bump in this process, make the atom or the molecule generation ionization of gas, produce a large amount of ion and electronics.Wherein the electronics continuation is moved and is bombarded crucible to crucible and produces a large amount of heats, and when the coating materials in the crucible is heated to vaporization temperature, the atom of coating materials or atomic group will evaporate from crucible, and the atom or the atomic group that are deposited on substrate will condense the formation film.
When working, this evaporation source can produce different kinds of ions, at first working gas (as argon gas) atom produces argon ion after by ionization, and the second, if the gas feed-in that responds also will be produced ion by ionization, the 3rd, the atom or the atomic group that are evaporated out coating materials are also produced ion with part by ionization.These ions upwards quicken and move to substrate with certain energy then under the effect of Hall field, and the ion that working gas produced will bombard substrate, thereby realize the purpose of Ion Aided Film Coating.Other ion formation film that reacts in the time of will or arriving substrate before arriving substrate reaches the purpose of reaction plated film.
The vaporator rate of evaporation source is directly proportional with the power that reaches the anodic electron beam, supposes I
NeFor arriving anodic electronic beam current, V
dBe sparking voltage, the power P that then arrives the anodic electron beam can be expressed as:
P?∝?I
neV
d
Under the constant situation of other conditions, anodic current increases, and vaporator rate increases; Anode voltage increases, and vaporator rate increases.
When the fusing point that is evaporated the metal coating materials was higher than the fusing point of filament, the coating materials of evaporation can be deposited on the filament surface, caused filament to poison, and made the filament can not the normal transmission thermoelectron, caused evaporation source not work.In this case, can adopt the electron source (as the hollow cathode electron source) of other form, this electron source is placed in a side of evaporation source, make electron source not be deposited, to guarantee the electron source works better.
By a kind of evaporation source of the present invention's design, ionogenic diameter is 146mm, and top pole bore (internal diameter) is 66mm, and the height of discharge chamber is 25mm, and magnet diameter is 26mm, and the vertical component of the magnetic induction density in magnetic field, discharge chamber central position is 0.045T.
When argon flow amount is 5.0sccm, cathode filament is a tungsten filament, and diameter is 0.6mm, and heater current is 27.3A, and pressure in vacuum tank is 5 * 10
-2During Pa, the relation of its anode voltage and electric current as shown in Figure 4.This shows that the evaporation source typical operating conditions is voltage 100-1000 volt, electric current 0-10 ampere.Such working conditions has been avoided high-voltage discharge, makes the evaporation source can steady operation.
The invention is not restricted to axisymmetric circular evaporation source, evaporation source of the present invention can be different shapes, and as with shown in Figure 3, but evaporation source is along extending in work range perpendicular to the symmetry axis direction, can form " mouth " type or " O " type structure, development length is 80-2000mm.
Evaporation source of the present invention promptly can be used to the evaporate metal films so material and is coated with metallic film, also can come the evaporated metal coating materials to be coated with nonmetal film with the mode of reaction plated film.Feed reactant gases (as oxygen, nitrogen) and working gas (as argon gas) in the discharge chamber simultaneously, metal coating materials atom that is evaporated or atomic group will react with atom, the ion of reactant gases to generate nonmetal molecule and be deposited on substrate surface and form film, and the composition of film can be controlled by the supply flow rate that changes reactant gases.
Evaporation source of the present invention promptly can be used to evaporation coating, also can be used for substrate is plated preceding cleaning, the discharge power of evaporation source is reduced to coating materials be not evaporated, and promptly can clean with the ion pair substrate of evaporation source discharge generation.If will place refractory metal or graphite in the crucible of evaporation source, evaporation source can be used as ion source, substrate is carried out high strength clean.
The integrated design of functions such as cleaning before evaporation source of the present invention has been realized plating, evaporation and ion are auxiliary can be saved the device fabrication cost, has increased adhesion of thin film and density etc., has improved film quality.
Under medium voltage and electric current, work, be beneficial to high-power steady operation.With the direct feed-in evaporation source of reactant gases and make its ionization, be coated with non-metallic film with reacting with metal coating materials atom or atomic group, be beneficial to the stoicheiometry that increases level of response and control film.
Description of drawings
Fig. 1 is a hollow cathode type evaporation source synoptic diagram.Hollow cathode type evaporation source 1, deflection solenoid 2, hollow cathode 3, electron beam move horizontally coil 4, and electron beam moves horizontally magnetic pole 5, electron beam 6, crucible 7, crucible 8
Fig. 2 is an end hall ion source synoptic diagram.End hall ion source 20, qi-emitting hole 21, magnetic line of force 23 in the cathode filament 22, region of discharge, region of discharge 24, anode 25, outer magnetic pole 26, top pole 27
Fig. 3 is a Hall type ion assisting ion of the present invention source synoptic diagram.Cathode filament 31, anode 32,33-steam line, 34-water-in, the 35-water outlet, 36-flange backboard, 37-ceramic insulation pad, 38-region of discharge, the 39-crucible, 40-water-cooling groove, 41-anode standing bolt, 42-air distribution plate, 43-cloth air drain, qi-emitting hole 44, sealing-ring 45, insulating washer 46, back of the body magnetic pole 47, magnet 48, outer magnetic pole 49, top pole 50, water-cooling groove 51.
The relation of anodic electric current and voltage when Fig. 4 is the work of Hall type ion assisting ion source
Claims (3)
1, a kind of Hall type ion auxiliary evaporation source is made up of parts such as cathode filament (31), anode (32), airing system, magnetic circuits, and it is characterized in that: evaporation source is installed on the unspecified vacuum-chamber wall by flange backboard (36); Be equipped with on the top of evaporation source and can launch thermionic cathode filament (31), filament can have the material manufacturing of high thermal electron emission rate with tungsten, tantalum, and filament is by ceramic insulation pad (37) and the insulation of ion source miscellaneous part; In discharge chamber (38) bottom anode (32) has been installed, is constructed the crucible (39) that loads coating materials on anode, crucible bottom has water cooling chamber (40), and anode is connected with the air distribution plate (42) of bottom by bolt (41); On air distribution plate, construct ring-like cloth air drain (43), have along the equally distributed air vent of circumference (44) at cloth air drain top; Working gas and reactant gases are entered in the ring shaped slot by air-supply duct (33), then by air vent along the air feed in discharge chamber of direction shown in the figure; In addition, on air distribution plate, also construct the water-in (34) and the water outlet (35) of water coolant; Water coolant enters into cooling trough by inlet channel, is flowed out by water outlet after circulation and anode heat exchange, and is sufficiently cooled to guarantee crucible, avoids crucible and other parts to be burnt; Overheated in order to prevent outer magnetic pole and top pole from being bombarded, can carry out water-cooled to it, the top pole superstructure has gone out water-cooling groove (51), and feeding recirculated water in water-cooling groove can effectively cool off magnetic pole.
2, according to the described Hall type ion auxiliary evaporation source of claim 1, it is characterized in that: be insulating washer (46) and metal washer (45) in the bottom of air distribution plate (42), their effect is to keep the space between air distribution plate and back of the body magnetic pole (47) can place magnet (48), and makes anode (32) and air distribution plate (42) and flange backboard (36) insulation; The magnetic circuit of evaporation source is made up of back of the body magnetic pole (47), magnet (48), outer magnetic pole (49) and top pole (50), the Distribution of Magnetic Field that this magnetic circuit forms in discharge chamber, electronics can be converged in the crucible, and magnetic field is 0.02 to 0.08T (tesla) at crucible surface magnetic field magnetic induction density vertically.
3, according to the described Hall type ion auxiliary evaporation source of claim 1, it is characterized in that: but evaporation source can form " mouth " type or " O " type structure along extending in work range perpendicular to the symmetry axis direction, and development length is 80-2000mm
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021166889A CN1160477C (en) | 2002-04-16 | 2002-04-16 | Hall type ion auxiliary evaporation source |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB021166889A CN1160477C (en) | 2002-04-16 | 2002-04-16 | Hall type ion auxiliary evaporation source |
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| CN1160477C CN1160477C (en) | 2004-08-04 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1303246C (en) * | 2004-07-06 | 2007-03-07 | 西安交通大学 | Metal ion source |
| CN100354589C (en) * | 2003-11-24 | 2007-12-12 | 深圳大学 | Vacuum smelting furnace |
| CN100463099C (en) * | 2004-12-08 | 2009-02-18 | 鸿富锦精密工业（深圳）有限公司 | Ion source |
| CN100481306C (en) * | 2003-12-22 | 2009-04-22 | 中国科学院半导体研究所 | Ion source device for low-energy ion beam material preparing method |
| CN101192497B (en) * | 2006-11-24 | 2010-09-29 | 鸿富锦精密工业（深圳）有限公司 | Ion source |
| CN101451230B (en) * | 2007-11-28 | 2011-06-01 | 上海华虹Nec电子有限公司 | Metal evaporation equipment |
| CN102543643A (en) * | 2010-12-27 | 2012-07-04 | 北京中科信电子装备有限公司 | Solid matter gasification device for ion source |
| CN109457222A (en) * | 2018-11-28 | 2019-03-12 | 合肥如真空设备有限公司 | High-temperature vacuum evaporates ionization coating apparatus and its operating method |
| CN110129739A (en) * | 2019-06-19 | 2019-08-16 | 广东腾胜科技创新有限公司 | The equipment that terbium or dysprosium are plated in magnetic material surface evaporation |
| CN115365083A (en) * | 2021-05-17 | 2022-11-22 | 亨泰光学股份有限公司 | Bidirectional anode plasma chemical vapor deposition coating equipment |
-
2002
- 2002-04-16 CN CNB021166889A patent/CN1160477C/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100354589C (en) * | 2003-11-24 | 2007-12-12 | 深圳大学 | Vacuum smelting furnace |
| CN100481306C (en) * | 2003-12-22 | 2009-04-22 | 中国科学院半导体研究所 | Ion source device for low-energy ion beam material preparing method |
| CN1303246C (en) * | 2004-07-06 | 2007-03-07 | 西安交通大学 | Metal ion source |
| CN100463099C (en) * | 2004-12-08 | 2009-02-18 | 鸿富锦精密工业（深圳）有限公司 | Ion source |
| CN101192497B (en) * | 2006-11-24 | 2010-09-29 | 鸿富锦精密工业（深圳）有限公司 | Ion source |
| CN101451230B (en) * | 2007-11-28 | 2011-06-01 | 上海华虹Nec电子有限公司 | Metal evaporation equipment |
| CN102543643A (en) * | 2010-12-27 | 2012-07-04 | 北京中科信电子装备有限公司 | Solid matter gasification device for ion source |
| CN109457222A (en) * | 2018-11-28 | 2019-03-12 | 合肥如真空设备有限公司 | High-temperature vacuum evaporates ionization coating apparatus and its operating method |
| CN110129739A (en) * | 2019-06-19 | 2019-08-16 | 广东腾胜科技创新有限公司 | The equipment that terbium or dysprosium are plated in magnetic material surface evaporation |
| CN115365083A (en) * | 2021-05-17 | 2022-11-22 | 亨泰光学股份有限公司 | Bidirectional anode plasma chemical vapor deposition coating equipment |
| CN115365083B (en) * | 2021-05-17 | 2024-06-11 | 亨泰光学股份有限公司 | Bidirectional anode plasma chemical vapor deposition coating equipment |
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| CN1160477C (en) | 2004-08-04 |
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