KR102423269B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus capable of preventing a substrate processing gas or volatile material from being condensed on an inner wall of a chamber during a substrate processing process, comprising: a chamber in which an internal space capable of processing a substrate is formed; at least one of a gas inlet for supplying a process gas to the internal space of and a first heater disposed in a shape to heat the inner wall or the inner space of the chamber, wherein the first heater includes a heat insulating member formed of a plate-shaped heat insulating material and a first formed on one surface of the heat insulating member It may include a heating element.

Description

Substrate processing apparatus

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of preventing a substrate processing gas or a volatile material from being condensed on an inner wall of a chamber during a substrate processing process.

In a substrate processing apparatus used for manufacturing a display device or a semiconductor device, a large amount of processing gas may be supplied and discharged into a chamber in which a substrate is processed. The processing gas may be supplied into the chamber and discharged from the chamber for the purpose of forming a thin film on the substrate, forming a pattern on the thin film on the substrate, and ventilating an atmosphere inside the chamber.

During the substrate processing process, the inner wall of the chamber may be contaminated by the processing gas supplied into the chamber or the gas volatilized from the substrate. During the substrate processing process, it is necessary to maintain a predetermined process temperature and process pressure inside the chamber. At this time, a phenomenon in which gas is condensed on the inner wall of the chamber may occur due to a temperature and pressure difference between the outside of the chamber and the inside of the chamber. The condensed gas may further contaminate the inner wall of the chamber by repeating evaporation and condensation in the repeated substrate processing process, reacting with gases of other chemical components, or degenerating under a specific temperature environment.

Accordingly, in the conventional substrate processing apparatus, the contaminated material condensed on the inner wall of the chamber re-evaporates during the subsequent substrate processing process and flows into the substrate to contaminate the substrate, thereby reducing product reliability and reducing yield. There was a problem. In addition, the conventional substrate processing apparatus has a problem of cleaning the condensed material condensed on the inner wall of the chamber or replacing the chamber wall itself, thereby increasing the production cost of the product.

The present invention is to solve various problems, including the above problems, by maintaining the inner wall of the chamber at a predetermined temperature to prevent gas from condensing on the inner wall of the chamber, and by keeping the inner wall of the chamber uncontaminated. An object of the present invention is to provide a substrate processing apparatus capable of increasing quality reliability and yield of a substrate to be processed inside. However, these problems are exemplary, and the scope of the present invention is not limited thereto.

According to one aspect of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus may include: a chamber in which an internal space capable of processing a substrate is formed; a gas inlet for supplying a process gas to the interior space of the chamber; a gas outlet for discharging the process gas of the inner space to the outside; and at least one of the first heaters disposed inside the chamber in a shape surrounding the inner space to heat the inner wall or the inner space of the chamber, wherein the first heater is a plate-shaped insulator Insulation member formed of; and a first heating element formed on one surface of the heat insulating member.

In the substrate processing apparatus, the first heater may be disposed such that the one surface of the heat insulating member on which the first heating element is formed faces the inner space.

In the substrate processing apparatus, the first heater may be disposed such that the one surface of the heat insulating member on which the first heating element is formed faces the inner wall of the chamber.

In the substrate processing apparatus, the first heater may further include a second heating element formed on the other surface facing the one surface of the heat insulating member, wherein the one surface of the heat insulating member on which the first heating element is formed is disposed in the chamber. It may be arranged to face the inner wall, and the other surface of the heat insulating member on which the second heating element is formed faces the inner space.

In the substrate processing apparatus, in the first heater, the heat insulating member or the first heating element may be in direct contact with the inner wall of the chamber.

In the substrate processing apparatus, the first heater heats and maintains the temperature of the inner wall of the chamber to 50 to 250 degrees, so that the reactant material on the substrate vaporized or dried in the chamber is applied to the inner wall of the chamber. It may further include a control unit for controlling the first heater to prevent condensation.

In the substrate processing apparatus, the reaction material may be a volatile material that is vaporized at 50 to 250 degrees.

In the substrate processing apparatus, the first heater may transfer and coat a heating material to a thickness of 10 mm or less on the one surface of the heat insulating member to form the first heating element.

In the substrate processing apparatus, the gas inlet may be connected to one external side of the chamber, and the gas outlet may be connected to the other external side of the chamber.

According to another aspect of the present invention, a substrate processing apparatus is provided. The substrate processing apparatus may include: a chamber in which an internal space capable of processing a plurality of substrates is formed; a gas inlet for supplying a process gas to the interior space of the chamber; a gas outlet for discharging the process gas of the inner space to the outside; at least one first heater disposed in a shape surrounding the inner space from the inside of the chamber to heat the inner wall or the inner space of the chamber; and a plurality of second heaters disposed between the plurality of substrates to heat the substrates, wherein the first heater and the second heater include: a heat insulating member formed of a plate-shaped heat insulating material; and a first heating element formed on one surface of the heat insulating member.

In the substrate processing apparatus, a plurality of the second heaters are formed between the plurality of substrates to respectively form heating regions of the plurality of substrates in the internal space, and to independently control the temperature of each of the heating regions. It may further include; a control unit for controlling the second heater so as to do so.

In the substrate processing apparatus, the second heater may be disposed such that the one surface of the heat insulating member on which the first heating element is formed faces the upper substrate.

In the substrate processing apparatus, the second heater may be disposed such that the one surface of the heat insulating member on which the first heating element is formed faces the substrate positioned below.

In the substrate processing apparatus, the second heater may further include a second heating element formed on the other surface facing the one surface of the insulation member, wherein the one surface of the insulation member on which the first heating element is formed is located upward. It may be arranged to face the substrate, and the other surface of the heat insulating member on which the second heating element is formed faces the substrate located below.

In the substrate processing apparatus, the second heater includes a plurality of fins protruding from an upper surface of the second heater so as to support the substrate to be spaced apart from the one surface of the heat insulating member on which the first heating element is formed. of the substrate support pin; may further include.

According to the substrate processing apparatus according to an embodiment of the present invention made as described above, by maintaining the inner wall of the chamber at a predetermined temperature to prevent gas from being condensed on the inner wall of the chamber, and by keeping the inner wall of the chamber uncontaminated. It is possible to implement a substrate processing apparatus having an effect of increasing the quality reliability and yield of the substrate processed in the chamber. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view schematically illustrating embodiments of a chamber inner wall and a first heater of a portion 'II' of the substrate processing apparatus of FIG. 1 .
3 and 4 are cross-sectional views schematically illustrating a first heater of the substrate processing apparatus of FIG. 1 .
5 is a cross-sectional view schematically illustrating a substrate processing apparatus according to another exemplary embodiment of the present invention.

Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows It is not limited to an Example. Rather, these embodiments are provided so as to more fully and complete the present disclosure, and to fully convey the spirit of the present invention to those skilled in the art. In addition, in the drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically illustrating ideal embodiments of the present invention. In the drawings, variations of the illustrated shape can be envisaged, for example depending on manufacturing technology and/or tolerances. Accordingly, embodiments of the inventive concept should not be construed as limited to the specific shape of the region shown in the present specification, but should include, for example, changes in shape caused by manufacturing.

In this specification, the substrate may be understood to include all substrates such as substrates, semiconductor substrates, and solar cell substrates used in display devices such as LEDs and LCDs, and is preferably used in flexible display devices. It can be understood to mean a flexible substrate that becomes

In addition, in the present specification, the substrate processing process may be understood to include a deposition process, a heat treatment process, and the like, preferably forming a flexible substrate on a non-flexible substrate, forming a pattern on a flexible substrate , may be understood to mean a process such as separation of the flexible substrate.

1 is a cross-sectional view schematically illustrating a substrate processing apparatus 100 according to an embodiment of the present invention. In addition, FIG. 2 is a cross-sectional view schematically illustrating embodiments of the inner wall 11 and the first heater 40 of the chamber 10 of part 'II' of the substrate processing apparatus 100 of FIG. 1 , and FIGS. 3 and FIG. 4 is a cross-sectional view schematically illustrating the first heater 40 of the substrate processing apparatus 100 of FIG. 1 .

First, as shown in FIG. 1 , a substrate processing apparatus 100 according to an exemplary embodiment includes a chamber 10 , a gas inlet 20 , and a gas outlet 30 . ), a first heater 40 and a control unit (not shown) may be included.

As shown in FIG. 1 , in the chamber 10 , an internal space A capable of processing at least one substrate S may be formed. More specifically, the chamber 10 has an internal space A that can be processed by loading the substrate S therein, and the material of the chamber 10 body is quartz, stainless steel (SUS). ), aluminum, graphite, silicon carbide, or aluminum oxide may be at least one.

At least one substrate S may be disposed inside the chamber 10 . For example, the substrate S is spaced apart from the bottom surface of the chamber 10 by a predetermined distance by a plurality of substrate support pins 12 formed to protrude from the bottom surface of the chamber 10 in a pin shape. It may be supported to be disposed in the center of the inner space (A).

Also, although not shown, the chamber 10 may have an entrance that is a passage for loading or unloading the substrate S on one surface thereof, and the entrance may be formed only on one surface of the chamber 10, and one surface and It may also be formed on the other surface facing each other. In this case, a door may be installed in the doorway, and the door may be slidably installed in the front-back direction, left-right direction, or up-down direction to open and close the doorway.

As shown in FIG. 1 , the gas inlet 20 supplies the processing gas to the internal space A of the chamber 10 , and the gas outlet 30 supplies the processing gas to the internal space A of the chamber 10 . can be discharged outside. For example, the gas inlet 20 may be connected to one external side of the chamber 10 , and the gas outlet 30 may be connected to the other external side of the chamber 10 in a direction facing the gas inlet 20 . have.

More specifically, the gas inlet 20 is connected to a gas storage unit (not shown) to provide a passage for supplying a processing gas capable of processing the substrate S to the internal space A of the chamber 10 . can The gas outlet 30 may be connected to an external gas discharge facility (not shown) to provide a passage for discharging the process gas of the internal space A of the chamber 10 to the outside.

At this time, the gas inlet 20 and the gas outlet 30 uniformly supply the processing gas to the substrate S when the substrate S is accommodated in the inner space A of the chamber 10 , In order to easily suck the process gas and discharge it to the outside, it is located on the upper surface and the lower surface of the chamber 10 , respectively, so as to face each other with respect to the substrate S disposed in the inner space A of the chamber 10 . It may be desirable to form

As shown in Figure 1, the first heater 40, at least one is disposed in a shape surrounding the inner space (A) on the inside of the chamber 10, the inner wall 11 or The inner space (A) can be heated. More specifically, the first heater 40 may include a heat insulating member P formed of a plate-shaped heat insulating material and a first heating element H1 formed on one surface of the heat insulating member P.

At this time, the first heater 40 easily heats and maintains the temperature of the inner wall 11 of the chamber 10 in a predetermined temperature range to vaporize or dry the reactant material on the substrate S in the chamber 10 . It may be arranged in various forms to prevent condensation on the inner wall 11 of the chamber 10 .

For example, as shown in (a) of FIG. 2 , the first heater 40 may be disposed such that the one surface of the heat insulating member P on which the first heating element H1 is formed faces the internal space A. have. In addition, as shown in (b) of Figure 2, the first heater 40, the one side of the heat insulating member (P) formed with the first heating element (H1) the inner wall 11 of the chamber 10 It can be arranged to face. In this case, the first heater 40 may be formed to be spaced apart from the inner wall 11 of the chamber 10 by a predetermined distance, and in addition, as shown in FIGS. The heat insulating member P or the first heating element H1 of the heater 40 may be disposed to directly contact the inner wall 11 of the chamber 10 .

In addition, as shown in (e) of FIG. 2, the first heater 40 further includes a second heating element H2 formed on the other surface facing the one surface of the heat insulating member P, the heat insulating member A first heating element (H1) and a second heating element (H2) may be formed on both surfaces of (P). Accordingly, the one surface of the heat insulating member P on which the first heating element H1 is formed faces the inner wall 11 of the chamber 10, and the other surface of the heat insulating member P on which the second heating element H2 is formed. It may be arranged to face the inner space (A). At this time, the first heater 40 may be formed to be spaced apart from the inner wall 11 of the chamber 10 by a predetermined distance. The first heating element H1 may be disposed to directly contact the inner wall 11 of the chamber 10 .

3 and 4 , the first heater 40 may transfer-coat a heating material to a thickness of 10 mm or less on the one surface of the heat insulating member P to form the first heating element H1. . In addition, although not shown, the second heating element H2 may also be formed by transferring a heating material to the other surface of the heat insulating member P to a thickness of 10 mm or less.

More specifically, as shown in FIG. 3 , the first heating element H1 is formed of a heat-insulating member P in the form of a heating wire having a uniform pattern shape so that heat can be uniformly generated in the entire region of the heat-insulating member P. It may be transfer-coated on the one surface. For example, the first heating element H1 has the pattern shape in which “∪” and “∩” are continuously repeated, “┓” shape and “┏” shape are sequentially and continuously repeated in a zigzag shape, a straight shape, etc. It can be formed in various ways.

The first heating element H1 formed in the form of a hot wire having the predetermined pattern shape is formed in a plate shape such as a rectangular cross section, so that heat transfer can be efficiently performed. In addition, the heating material constituting the first heating element H1 is Kanthal, nickel-chromium alloy (Ni-Cr alloy), graphite, carbon composite, silicon carbide, or molybdenum ( Mo) may be formed by a combination of at least any one of.

Therefore, the first heating element (H1) transfer-coated on the entire area of the one surface of the heat insulating member (P) in the form of a heating wire having a constant pattern shape receives power from an external power supply device (not shown) to receive power from the heat insulating member ( P) can be uniformly heated in the entire area. In this case, the first heating element H1 may be configured with one hot wire to generate heat, or may be configured with a plurality of heat wires to generate heat. When the first heating element H1 is composed of one heating wire, there may be advantages of a simple configuration of a terminal for connection with the power supply device and low power consumption. and can have the advantage of being easy to maintain.

In addition, the controller (not shown) is electrically connected to apply a control signal to the first heater 40 so that the first heater 40 lowers the temperature of the inner wall 11 of the chamber 10 by 50 degrees. To prevent the reaction material on the substrate (S) vaporized or dried in the chamber (S) from being condensed on the inner wall (11) of the chamber (10) by heating and maintaining to 250 degrees, the first heater (40) can control Here, the reaction material may be a volatile material that is vaporized at 50 to 250 degrees.

For example, if it is assumed that the substrate S processed by the substrate processing apparatus 100 according to the embodiment is a flexible substrate used in the flexible display apparatus, then the first heater 40 and the control are performed during the substrate processing process. The function of the control unit to be described in detail is as follows.

In general, the manufacturing process of the flexible substrate S may be divided into a process of forming a flexible substrate on the non-flexible substrate, a process of forming a pattern on the flexible substrate, and a process of separating the flexible substrate from the non-flexible substrate. A flexible substrate is formed by forming a film made of polyimide, etc. on a non-flexible substrate such as glass or plastic, curing it by heat treatment, and then injecting a solvent into the material bonding the non-flexible substrate and the flexible substrate to weaken the adhesive force. or by disassembling the adhesive material to separate the flexible substrate from the non-flexible substrate.

At this time, the solvent component to be injected or the solvent component included in the flexible substrate S during the formation process of the flexible substrate S is volatilized and discharged to the outside of the chamber 10 through the gas outlet 30, Due to the temperature and pressure difference between the outside and the inside of the chamber 10, at least a portion of the inner wall 11 of the chamber 10 may be formed at a temperature low enough to be condensed without volatilization of the above material. For this reason, the solvent component condensed on the inner wall 11 of the chamber 10 may contaminate the inside of the chamber 10 or contaminate another flexible substrate S in a subsequent process. Accordingly, in the substrate processing apparatus 100 according to an embodiment of the present invention, the gas in the internal space A of the chamber 10 including the solvent is not condensed on the inner wall 11 of the chamber 10 and is converted into a gaseous state. It is characterized in that the temperature of the inner wall 11 of the chamber 10 can be maintained to such a degree that the gas is not condensed so that all can be discharged to the outside.

For example, the material included on the substrate S is a volatile material such as a solvent, and may be a material that is vaporized at 50°C to 250°C. The material may be preferably NMP (n-methyl-2-pyrrolidone), and may be a volatile material such as IPA, acetone, or PGMEA (Propylene Glycol Monomethyl Ether Acetate).

Therefore, in order to induce the volatile materials to be discharged by maintaining a gaseous state without being condensed on the inner wall 11 of the chamber 10, the chamber 10 is controlled by the first heater 40 and the control unit controlling the same. The temperature of the inner wall 11 may be heated and maintained at a temperature at which the volatile materials can be vaporized.

Therefore, in the substrate processing apparatus 100 according to an embodiment of the present invention, the gas is supplied to the inner wall 11 of the chamber 10 by heating and maintaining the inner wall 11 of the chamber 10 to a predetermined temperature. It can be prevented from condensing. In addition, since the gas is not condensed on the inner wall 11 of the chamber 10 and can all be discharged to the outside of the chamber 10, the inner wall 11 of the chamber 10 is kept uncontaminated by the chamber 10 ) may have the effect of increasing the quality reliability and yield of the substrate (S) processed within.

5 is a cross-sectional view schematically illustrating a substrate processing apparatus 200 according to another exemplary embodiment of the present invention.

As shown in FIG. 5 , the substrate processing apparatus 200 according to another embodiment of the present invention includes a chamber 10 in which an internal space A capable of processing a plurality of substrates S is formed, and the chamber At least one of the chamber 10 includes a gas inlet 20 for supplying a process gas to the inner space A of 10 , a gas outlet 30 for discharging the process gas from the inner space A to the outside; ) disposed in a shape surrounding the inner space (A) from the inside, between the first heater 40 and the plurality of substrates (S) for heating the inner wall 11 or the inner space (A) of the chamber (10) It may include a plurality of second heaters 50 disposed on the substrate (S) for heating.

More specifically, the first heater 40 and the second heater 50 include a heat insulating member P formed of a plate-shaped heat insulating material and a first heating element H1 formed on one surface of the heat insulating member P. can do. Here, the second heater 50 includes components of the first heater 40 of the substrate processing apparatus 100 according to an embodiment of the present invention shown in FIGS. 1 to 4 described above, and its configuration and roles. This can be the same. Therefore, detailed description is omitted.

As shown in FIG. 5 , a plurality of second heaters 50 are formed between the plurality of substrates S, and are heated regions A1 , A2 , A3 of the plurality of substrates S in the internal space A, A4) is formed, and in this case, the controller may control the second heater 50 to independently control the temperature of each of the heating regions A1, A2, A3, and A4.

Here, the second heater 50 may be arranged in various forms to easily heat and maintain the plurality of substrates S at the same process temperature or different process temperatures.

For example, the second heater 50 may be disposed such that the one surface of the heat insulating member P on which the first heating element H1 is formed faces the upper substrate S. In addition, the second heater 50 may be disposed such that the one surface of the heat insulating member P on which the first heating element H1 is formed faces the substrate S located below it.

In addition, the second heater 50 further includes a second heating element (H2) formed on the other surface facing the one surface of the heat insulating member (P), the first heating element (H1) on both surfaces of the heat insulating member (P) and a second heating element H2 may be formed. Accordingly, the one surface of the heat insulating member P on which the first heating element H1 is formed faces the substrate S located above, and the other surface of the heat insulating member P on which the second heating element H2 is formed is located below. It may be disposed to face the substrate (S).

At this time, the second heater 50 supports the substrate S to be spaced apart from the one surface of the heat insulating member P on which the first heating element H1 is formed by a predetermined distance, so that each heating region A1, A2, A3, A plurality of substrate support pins 51 formed to protrude in a pin shape on the one surface may be included so that the substrate S can be supported in A4). Accordingly, a plurality of substrates (S) can be arranged in the center of each heating area (A1, A2, A3, A4) spaced apart from the second heater (50) by a predetermined distance by the substrate support pin (51), respectively. have.

Accordingly, in the substrate processing apparatus 200 according to another embodiment of the present invention, the inner wall 11 of the chamber 10 is heated and maintained at a predetermined temperature by the first heater 40 to It is possible to prevent the gas from being condensed on the inner wall 11 , and accordingly, the gas can be discharged to the outside of the chamber 10 without being condensed on the inner wall 11 of the chamber 10 , so that the chamber 10 ) can be maintained so that the inner wall 11 is not contaminated.

In addition, by forming the heating regions A1 , A2 , A3 , A4 of the plurality of substrates S in the internal space A by the second heater 50 , respectively, and independently controlling the temperature, the plurality of substrates S ) through the separation of heating zones, the influence with adjacent heating zones can be reduced, and the temperature control of each heating zone A1, A2, A3, and A4 can be facilitated.

Therefore, in the substrate processing apparatus 200 according to another embodiment of the present invention, a process time can be reduced by processing a plurality of substrates S at once in the chamber 10 , and the substrate processed in the chamber 10 . (S) may have the effect of increasing the quality reliability and yield.

In addition, since the first heater 40 and the second heater 50 can be modularized to form a wall of the chamber 10 and a slot wall between each substrate S and the substrate S, the fabrication of the device It may have the effect of simplifying the process.

Although the present invention has been described with reference to the embodiment shown in the drawings, which is merely exemplary, it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

10: chamber
20: gas inlet
30: gas outlet
40: first heater
50: second heater
A: interior space
S: substrate
P: insulation member
H1: first heating element
H2: second heating element
100, 200: substrate processing apparatus

Claims (15)

A substrate processing apparatus comprising:
a chamber in which an internal space capable of processing a substrate is formed;
a gas inlet for supplying a process gas to the interior space of the chamber;
a gas outlet for discharging the process gas of the inner space to the outside; and
At least one of the first heaters disposed inside the chamber in a shape surrounding the inner space to heat the inner wall and the inner space of the chamber;
The first heater,
a heat insulating member formed of a plate-shaped heat insulating material;
a first heating element formed on one surface of the heat insulating member; and
a second heating element formed on the other surface facing the one surface of the heat insulating member;
includes
and wherein the one surface of the heat insulating member on which the first heating element is formed faces the inner wall of the chamber, and the other surface of the heat insulating member on which the second heating element is formed faces the inner space. delete delete delete The method of claim 1,
The first heater,
and the heat insulating member or the first heating element is in direct contact with the inner wall of the chamber. The method of claim 1,
The first heater heats and maintains the temperature of the inner wall of the chamber to 50 degrees to 250 degrees to prevent the reactant material on the substrate vaporized or dried in the chamber from condensing on the inner wall of the chamber a control unit for controlling the first heater;
Further comprising a substrate processing apparatus. 7. The method of claim 6,
The reactant is
A substrate processing apparatus, which is a volatile material that vaporizes at 50 to 250 degrees. The method of claim 1,
The first heater,
A substrate processing apparatus for forming the first heating element by transferring and coating a heating material to a thickness of 10 mm or less on the one surface of the heat insulating member. The method of claim 1,
The gas inlet is
It is connected to the outer side of the chamber,
The gas outlet is
connected to the other external side of the chamber. A substrate processing apparatus comprising:
a chamber in which an internal space capable of processing a plurality of substrates is formed;
a gas inlet for supplying a process gas to the interior space of the chamber;
a gas outlet for discharging the process gas of the inner space to the outside;
at least one first heater disposed in a shape surrounding the inner space from the inside of the chamber to heat the inner wall and the inner space of the chamber; and
a plurality of second heaters disposed between the plurality of substrates to heat the substrate;
The first heater,
a heat insulating member formed of a plate-shaped heat insulating material;
a first heating element formed on one surface of the heat insulating member; and
a second heating element formed on the other surface facing the one surface of the heat insulating member;
includes
The one surface of the heat insulating member on which the first heating element is formed faces the inner wall of the chamber, and the other surface of the heat insulation member on which the second heating element is formed faces the inner space,
The second heater,
a heat insulating member formed of a plate-shaped heat insulating material; and
a first heating element formed on one surface of the heat insulating member;
A substrate processing apparatus comprising a. 11. The method of claim 10,
The second heater,
A plurality is formed between the plurality of substrates to respectively form heating regions of the plurality of substrates in the inner space,
a control unit controlling the second heater to independently control the temperature of each of the heating regions;
Further comprising a substrate processing apparatus. 11. The method of claim 10,
The second heater,
and the one surface of the heat insulating member on which the first heating element is formed faces the substrate positioned above it. 11. The method of claim 10,
The second heater,
and the one surface of the heat insulating member on which the first heating element is formed faces the substrate positioned below. 11. The method of claim 10,
The second heater,
Further comprising; a second heating element formed on the other surface facing the one surface of the heat insulating member,
The substrate processing apparatus is disposed so that the one surface of the heat insulating member on which the first heating element is formed faces the upper substrate, and the other surface of the heat insulating member on which the second heating element is formed faces the substrate positioned below. 11. The method of claim 10,
The second heater is
a plurality of substrate support pins formed to protrude in a fin shape on the one surface to support the substrate to be spaced apart from the one surface of the heat insulating member on which the first heating element is formed;
Further comprising, a substrate processing apparatus.

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