CN107210245B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN107210245B
CN107210245B CN201580072720.1A CN201580072720A CN107210245B CN 107210245 B CN107210245 B CN 107210245B CN 201580072720 A CN201580072720 A CN 201580072720A CN 107210245 B CN107210245 B CN 107210245B
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Prior art keywords
chamber
substrate processing
wall
substrate
gas
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CN107210245A (en
Inventor
李炳一
朴暻完
康浩荣
朴俊圭
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YUANYI IPS CORP
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Wonik IPS Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

Disclosed is a substrate processing apparatus. The substrate processing apparatus according to the present invention includes: a gas inlet (300) for supplying a substrate processing gas into the chamber (101); a gas outlet (400) for discharging the substrate processing gas in the chamber (101) to the outside; a heater (200) which is arranged in the chamber (101) and heats the interior of the chamber (101); a temperature controller (500) disposed at an outer side surface of the chamber (101) for controlling a temperature of a chamber wall, wherein the temperature controller (500) maintains a temperature of an inner wall of the chamber (101) at 50 ℃ to 250 ℃ to prevent substances on the substrate vaporized or dried in the chamber from condensing on the inner wall of the chamber (101).

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus. More particularly, the present invention relates to a substrate processing apparatus including a temperature controller for controlling a temperature of a chamber wall, which can maintain a temperature of an inner wall of the chamber at a predetermined temperature to prevent condensation of a substrate processing gas or a volatile substance on the inner wall of the chamber.
Background
In a substrate processing apparatus used in manufacturing a display device or a semiconductor device, a large amount of gas is supplied and exhausted from a chamber for processing a substrate. These gases may be supplied to the inside of the chamber and exhausted from the chamber to the outside for the purpose of forming a thin film on a substrate, forming a pattern on a thin film on a substrate, or ventilating the atmosphere inside the chamber.
During substrate processing, the inner walls of the chamber may be contaminated by gases supplied to the interior of the chamber or gases volatilized from the substrate. In the substrate processing step, the inside of the chamber needs to be maintained at a predetermined process temperature and process pressure, and at this time, gas condenses on the inner wall of the chamber due to a temperature difference and a pressure difference between the outside of the chamber and the inside of the chamber. The condensed gas is repeatedly evaporated and condensed in the substrate processing process, reacts with other chemical components, or is deteriorated in a specific temperature environment, thereby further contaminating the inner wall of the chamber.
As a result, in the conventional substrate processing apparatus, the contaminants on the inner wall of the chamber are evaporated again in the subsequent substrate processing process and flow onto the substrate to contaminate the substrate, thereby reducing the reliability of the product and the yield.
In addition, the conventional substrate processing apparatus needs to wash contaminants on the inner wall of the chamber or replace the chamber wall itself, and thus, the production cost of the product is increased.
Disclosure of Invention
Technical problem to be solved by the invention
The present invention has been made to solve all the problems of the prior art described above, and an object of the present invention is to provide a substrate processing apparatus which maintains a predetermined temperature of an inner wall of a chamber, thereby preventing condensation of gas on the inner wall of the chamber.
Another object of the present invention is to provide a substrate processing apparatus that can prevent contamination of the inner wall of the chamber and improve the reliability and yield of products.
Technical scheme for solving problems
In order to achieve the above object, a substrate processing apparatus according to an embodiment of the present invention includes: an inlet port (inlet) for supplying substrate processing gas into the chamber; an air outlet (outlet) for discharging the substrate processing gas in the chamber to the outside; a heater disposed in the chamber for heating the inside of the chamber; and a temperature controller disposed at an outer side surface of the chamber to control a temperature of a chamber wall, wherein the temperature controller maintains a temperature of an inner wall of the chamber at 50 ℃ to 250 ℃ to prevent the substance from condensing on the inner wall of the chamber.
In order to achieve the above object, a method for preventing condensation of a volatile substance according to an embodiment of the present invention is characterized in that a temperature controller for controlling a temperature of a chamber wall maintains a temperature of an inner wall of the chamber at 50 to 250 ℃ in a substrate processing apparatus to prevent a substance on a substrate vaporized or dried in the chamber from condensing on the inner wall of the chamber.
Effects of the invention
According to the present invention configured as described above, the inner wall of the chamber is maintained at a predetermined temperature, thereby preventing the gas from condensing on the inner wall of the chamber.
In addition, the invention keeps the inner wall of the chamber from being polluted, thereby improving the reliability and the yield of products.
Drawings
Fig. 1 is a perspective view showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a front cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
Fig. 3 is a side sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 4 is a schematic diagram showing an operation of the temperature controller according to the embodiment of the present invention.
Fig. 5 is a sectional view showing an air inlet and an air outlet according to an embodiment of the present invention.
Fig. 6 is a perspective view showing a state in which a substance discharge hole is formed in the substrate processing apparatus according to the embodiment of the present invention.
Reference numerals
10: substrate
11: substrate support
100: main body
101: chamber
110: door with a door panel
120: reinforcing rib
200: heating device
210: main heater
220: auxiliary heater
300: air inlet
400: air outlet
500: temperature controller
600: chamber wall heating module
700: chamber wall cooling module
Detailed Description
For the following detailed description of the invention, reference is made to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It is to be understood that the various embodiments of the invention, although different from one another, are not necessarily mutually exclusive. For example, particular shapes, structures and characteristics described herein may be associated with one embodiment and may be implemented with other embodiments without departing from the spirit and scope of the present invention. It is to be understood that the location or arrangement of individual elements within each disclosed embodiment may be modified without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and all equivalents thereof. Like reference numerals in the drawings denote the same or similar functions in various aspects, and it is possible to enlarge the length as well as the area, thickness, etc. and the shape thereof for convenience.
In this specification, the substrate may be understood as all substrates including a substrate for a display device such as an LED or an LCD, a semiconductor substrate, a solar cell substrate, and the like, and may be preferably understood as a Flexible substrate for a Flexible (Flexible) display device.
In the present specification, the substrate processing step may be understood as including a vapor deposition step, a heat treatment step, and the like, and may preferably be understood as a step of forming a Flexible substrate on a Non-Flexible (Non-Flexible) substrate, forming a pattern on the Flexible substrate, separating the Flexible substrate, and the like.
Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings.
Fig. 1 is a perspective view showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention, fig. 2 is a front sectional view showing the substrate processing apparatus according to the embodiment of the present invention, and fig. 3 is a side sectional view showing the substrate processing apparatus according to the embodiment of the present invention.
Referring to fig. 1 to 3, the substrate processing apparatus according to the present embodiment may include a main body 100, a heater 200, an inlet (inlet)300, an outlet (outlet)400, and a temperature controller 500.
The main body 100 constitutes a chamber 101, and the chamber 101 is a closed space in which the substrate 10 is loaded and processed. The material of the body 100 may be at least one of Quartz (Quartz), stainless steel (SUS), aluminum (aluminum), Graphite (Graphite), Silicon carbide (Silicon carbide), or aluminum oxide (aluminum oxide).
A plurality of substrates 10 (see fig. 2) may be disposed inside the chamber 101. The plurality of substrates 10 may be disposed at regular intervals, and may be supported by a substrate holder 11 (see fig. 2) or disposed in a boat (not shown) inside the chamber 101.
A port 115 may be formed at one surface (e.g., a front surface) of the main body 100, and the port 115 is a passage through which the substrate 10 is loaded/unloaded. The access opening 115 may be formed only on one surface (e.g., front surface) of the main body 100, or may be formed on the opposite surface (e.g., rear surface).
The door 110 may be provided on one surface (i.e., a surface on which the doorway 115 is formed) of the main body 100. The door may be provided to be slidable in a front-rear direction, a left-right direction, or an up-down direction. The door 110 may open and close the doorway 115, or the chamber 101 may be opened and closed by opening and closing the doorway 115. A sealing member (not shown) such as an O-ring (O-ring) may be interposed between the door 110 and the surface of the body 100 on which the doorway 115 is formed, so that the doorway 115 is completely sealed by the door 110.
On the other hand, a reinforcing rib 120 may be combined on the outer side of the body 100. In the process, the inside of the main body 100 is damaged or deformed by the influence of a strong pressure or a high temperature. Therefore, the durability of the body 100 can be improved by coupling the reinforcing ribs 120 to the outer side surface of the body 100. If necessary, the reinforcing rib 120 may be incorporated only in a specific outer side face or a part of the outer side face.
The heater 200 may include: a main heater 210 for heating the inside of the chamber 101 to form a substrate processing atmosphere and directly heating the substrate 10; and a sub-heater 220 for preventing heat loss inside the chamber 101.
The main heaters 210 may be disposed at regular intervals in a direction perpendicular to the direction of loading/unloading the substrates 10, and may be disposed at regular intervals in a perpendicular direction along the stacking direction of the substrates 10. The sub-heaters 220 may be disposed on the inner wall of the chamber 101 in a direction parallel to the direction of loading/unloading the substrates 10, and spaced apart at regular intervals in the vertical direction along the stacking direction of the substrates 10.
The main heater 210 may include a plurality of heating elements 211 and terminals 212 provided at both ends of each heating element 211, and the sub-heater 220 may similarly include a plurality of heating elements 221 and terminals 222 provided at both ends of each heating element 221. The number of the heating elements 211, 221 may be variously changed according to the size of the main body 100, the size and the number of the substrates 10.
The heating elements 211 and 221 may have a bar shape communicating from one side surface of the chamber 101 to the other side surface, and may be in a state where a heating substance is inserted into the quartz tube. For example, the heating element 211 of the main heater 210 may communicate with the right side surface of the chamber 101, and the heating element 221 of the sub heater 220 may communicate with the rear surface of the chamber 101 from the front surface thereof excluding the portion of the inlet/outlet 115. The terminals 212 and 222 can receive electric power from an external power supply (not shown) to generate heat from the heating elements 211 and 221.
Therefore, the heaters 200 disposed above and below the substrate 10 can uniformly heat all surfaces of the substrate 10, thereby improving the reliability of the substrate processing process.
Referring again to fig. 1 to 3, the air inlet 300 may be connected to one side (e.g., a left side) of the outside of the chamber 101 (or the body 100), and the air outlet 400 may be connected to the other side (e.g., a right side) of the outside of the chamber 101 (or the body 100).
The gas inlet 300 may provide a passage for supplying a substrate processing gas toward the interior of the chamber 101. The air inlet 300 may include: a gas supply pipe 320 connected to a gas storage part (not shown) for receiving a substrate processing gas; and a plurality of gas inlet pipes 310 formed perpendicular to the gas supply pipe 320 and spaced apart from each other. The gas inlet pipe 310 may penetrate the body 100 and be connected to the inside of the chamber 101, and supply a substrate processing gas to the inside of the chamber 101 through a gas inlet hole 311 formed at an end of the gas inlet pipe 310.
The gas outlet 400 may provide a passage for externally discharging the substrate process gas inside the chamber 101. The air outlet 400 may include: a gas exhaust pipe 420 connected to an external gas exhaust facility (not shown) to exhaust the substrate processing gas; and a plurality of outlet pipes 410 which are perpendicular to the gas outlet pipe 420 and are formed at intervals from each other. The outlet pipe 410 may penetrate the body 100 and be connected to the inside of the chamber 101, and discharge gas from the inside of the chamber 101 to the outside through an outlet hole 411 formed at an end of the outlet pipe 410.
Preferably, the gas inlet holes 311 (or the gas inlet pipe 310) and the gas outlet holes 411 (or the gas outlet pipe 410) are respectively located in a gap between the substrate 10 disposed in the chamber 101 and an adjacent substrate 10 at an upper portion or a lower portion, so that when the chamber 101 receives a plurality of substrates 10, the substrate process gas can be uniformly supplied to the substrate 10 and easily sucked and discharged to the outside.
Referring again to fig. 1 to 3, the substrate processing apparatus of the present invention includes: the temperature controller 500 is disposed on the outer surface of the chamber 101 and controls the temperature of the chamber wall.
The temperature controller 500 may be disposed adjacent to or spaced apart from the outer surface of the chamber wall by a predetermined distance, and preferably, a pipe or the like capable of flowing a heating medium or a cooling medium is disposed in a zigzag shape. The temperature controller 500 functions to maintain the temperature of the inner wall of the chamber 101 at a predetermined temperature to prevent substances volatilized from the substrate 10 in the substrate processing process, substances supplied to the chamber 101 and discharged, and the like from condensing on the inner wall of the chamber 101. Preferably, the temperature of the inner wall of the chamber 101 is maintained at 50 to 250 ℃.
The temperature controller 500 may be disposed on the upper side 510, left and right sides 520 of the chamber wall: 520a and 520b, a lower portion 530, and front and rear doors 540 and 550, but the temperature controller 500 may not be disposed on a part of the outer side surface of the chamber 101 in order to maintain the temperature of the inner wall of the chamber 101 within a predetermined temperature range.
As an example, if the flexible substrate 10 used for the flexible display device is processed by the substrate processing apparatus of the present invention, the function of the temperature controller 500 during the substrate processing will be described in detail as follows.
In general, the manufacturing process of the flexible substrate 10 may be divided into a process of forming a flexible substrate on a non-flexible substrate, a process of forming a pattern on a flexible substrate, and a process of separating a flexible substrate from a non-flexible substrate.
A flexible substrate can be completed by forming a film made of Polyimide (Polyimide) or the like on a non-flexible substrate such as glass or plastic, curing the film by heat treatment, injecting a solvent into a substance for bonding the non-flexible substrate and the flexible substrate to weaken the adhesive force or decompose the adhesive substance, and separating the flexible substrate from the non-flexible substrate.
At this time, the injected solvent component or the solvent component contained in the flexible substrate volatilizes during the formation of the flexible substrate and may be discharged to the outside of the chamber 101 through the gas outlet 400, but the temperature of the inner wall of the chamber 101 may be low, so that the above-mentioned substances may be condensed at a certain portion of the inner wall of the chamber 101 due to the temperature difference and the pressure difference between the outside of the chamber 101 and the inside of the chamber 101 and may not volatilize. As a result, there may occur a problem that the solvent components condensed on the inner wall of the chamber 101 contaminate the chamber 101 or contaminate the substrate 10 in a subsequent process. Therefore, the substrate processing apparatus according to the present invention is characterized in that the temperature of the inner wall of the chamber 101 is maintained to a degree that prevents the gas from condensing so that the gas in the chamber 101 containing the solvent is not condensed on the inner wall of the chamber 101 but is discharged to the outside in a gaseous state.
As an example, the substance contained on the substrate 10 may be a volatile substance such as a solvent, which is a substance that is vaporized at 50 to 250 ℃. Preferably, such a substance may be NMP (N-methyl-2-pyrrolidone: N-methyl-2-pyrrolidone), or a volatile substance such as IPA, Acetone (Acetone), PGMEA (Propylene Glycol Monomethyl ether acetate: Propylene Glycol Monomethyl ether acetate).
In order to discharge the substance while maintaining a gaseous state without condensing the substance inside the chamber 101, it is a matter of course to maintain the temperature of the inner wall of the chamber 101 at a temperature at which the substance can be vaporized. For this, the chamber wall heating module 600 and the chamber wall cooling module 700 may be connected on the temperature controller 500.
Fig. 4 is a schematic diagram showing an operation of the temperature controller 500 according to the embodiment of the present invention.
Referring to fig. 4, a three-way valve (3 WV: 3way valve) may be provided in the middle of the temperature controller 500, the chamber wall heating module 600, and the chamber wall cooling module 700. The chamber wall heating module 600 includes a heat exchanger capable of instantaneously raising the temperature of Cooling Water (PCW), which may be understood as a device for heating and supplying the Cooling Water, and the chamber wall Cooling module 700 may be understood as a device for supplying the Cooling Water.
For example, the substrate processing temperature in the chamber 101 may be increased in stages, i.e., from 80 ℃ to 150 ℃, from 150 ℃ to 250 ℃, and from 250 ℃ to 350 ℃ during the substrate processing step. At the initial stage of the substrate processing, the temperature of the substrate processing inside the chamber 101 is about 80 ℃, and therefore, NMP, which is one of the volatile substances, may be relatively low at a temperature lower than 60 ℃ to 80 ℃ and the evaporation zone is about 80 ℃ to 150 ℃, and may be highly condensed on the inner wall of the chamber 101. Therefore, the three-way valve (3WV) is controlled at the initial stage of the substrate processing, the cooling water is heated by the chamber wall heating module 600 and supplied to the temperature controller 500(P1), and thereby the temperature of the chamber wall can be maintained at 80 ℃ or more, which is the lowest evaporation zone of NMP.
The chamber wall heating module 600 is activated when the substrate processing temperature inside the chamber 101 is below 300 ℃, and when the substrate processing temperature inside the chamber 101 is above 300 ℃, the three-way valve (3WV) is controlled to supply cooling water (P2) from the chamber wall cooling module 700 to the temperature controller 500, so that the temperature of the chamber wall can be maintained above 80 ℃ which is the lowest evaporation zone of NMP. Of course, if the temperature of the substrate processing inside the chamber 101 is higher than 300 ℃, the temperature of the chamber wall can reach 80 ℃ or higher without supplying the cooling water to the temperature controller 500, but if the temperature of the chamber wall is excessively increased to be higher than 80 ℃ to 250 ℃ of the evaporation zone of NMP, the problem of the chamber wall being twisted or damaged may occur, and therefore, it is necessary to appropriately supply the cooling water to the temperature controller 500 through the chamber wall cooling module 700. In other words, the chamber wall heating module 600 is activated when the substrate processing temperature inside the chamber 101 is below 300 ℃, and the chamber wall cooling module 700 is activated when the substrate processing temperature inside the chamber 101 is above 300 ℃, so that the temperature of the inner wall of the chamber 101 can be maintained at 50 ℃ to 250 ℃.
As described above, the substrate processing apparatus of the present invention includes the temperature controller 500 to maintain the temperature of the inner wall of the chamber 101 at a predetermined temperature (i.e., the evaporation temperature of the gas) to prevent the gas from condensing on the inner wall of the chamber 101. In addition, since the gas is not condensed on the inner wall of the chamber 101 but all of the gas is discharged to the outside of the chamber 101, the inner wall of the chamber 101 is not contaminated, and reliability and yield of the product can be improved.
On the other hand, the substrate processing apparatus of the present invention may further include means for discharging condensed gas. Next, description will be given with reference to fig. 5 and 6.
Fig. 5 is a sectional view showing the air inlet 300 and the air outlet 400 according to an embodiment of the present invention. Fig. 5 (a) shows the air inlet 300, and fig. 5 (b) shows the air outlet 400.
The gas may be prevented from condensing on the inner wall of the chamber 101 by the temperature controller 500, but the gas inlet 300 and the gas outlet 400 connected to one side (e.g., the left side) and the other side (e.g., the right side) of the outside of the chamber 101 may be affected by the low temperature of the outside, and the gas may be easily condensed. The condensed gas is once condensed on the pipe of the gas inlet 300, and then discharged into the chamber 101 together with the substrate processing gas supplied thereto when the substrate processing process is performed, thereby possibly contaminating the substrate 10.
Therefore, as shown in fig. 5 (a), the gas inlet 300 may further include a drain port 330 capable of discharging condensed gas (or condensed volatile substances). The drain port 330 may simply be a passage for discharging condensed liquid substances, or may have a suction (suction) function for sucking air by being connected to a pump (not shown) or the like. The gas (g in the drawing) may be supplied through the gas supply pipe 320, and the gas condensed inside the gas inlet 300, etc. may be discharged through the discharge port 330 (d in the drawing).
Similarly to the gas inlet 300, the gas outlet 400 may have a structure in which a discharge port (not shown) is connected to the gas discharge pipe 420.
On the other hand, as shown in fig. 5 b, the gas outlet 400 functions to discharge the gas inside the chamber 101 to the outside (g in the drawing), and thus, the gas inside the chamber 101 (g in the drawing) is discharged to the outside and the gas condensed inside the gas outlet 400 and the like (d in the drawing) can be simultaneously discharged to the outside, so that it is not necessary to separately provide a drain port (not shown) and the end 430 of the gas discharge pipe 420 functions as a drain port.
Fig. 6 is a view showing that a substance discharge hole (hole)130 is formed in a substrate processing apparatus according to an embodiment of the present invention: 130a, 130b, 130c, 130 d.
Referring to fig. 6, at least one side surface of the chamber 101, specifically, a side surface other than the left and right side surfaces of the chamber 101 on which the air inlet 300 and the air outlet 400 described with reference to fig. 5 are disposed, may be formed with a plurality of substance discharge holes 130: 130a, 130b, 130c, 130 d. The substance discharge hole may be connected to a pumping unit (not shown) disposed at the outside so as to effectively discharge the substance condensed inside the chamber 101.
The plurality of substance discharge holes 130 and the temperature controller 500 prevent the gas from condensing on the inner wall of the chamber 101, and even if the gas condenses, the gas can be discharged to the outside through the substance discharge holes 130, so that contamination of the inner wall of the chamber 101 can be more effectively prevented, and the reliability and yield of the product can be further improved.
As described above, the present invention has been described with reference to the preferred embodiments, but is not limited to the embodiments, and various changes and modifications can be made by those skilled in the art without departing from the spirit of the present invention. Such modifications and variations are considered to be within the scope of the claims of the present invention.

Claims (7)

1. A substrate processing apparatus, comprising:
an inlet port (inlet) for supplying substrate processing gas into the chamber;
an air outlet (outlet) for discharging the substrate processing gas in the chamber to the outside;
a heater disposed in the chamber for heating the inside of the chamber; and
a temperature controller disposed on an outer side surface of the chamber to control a temperature of the chamber wall,
when the processing temperature of the substrate in the chamber is below 300 ℃, a chamber wall heating module connected with the temperature controller is started, and a refrigerant is supplied to the temperature controller in a heating state;
when the processing temperature of the substrate in the chamber is higher than 300 ℃, a chamber wall cooling module connected with the temperature controller is started to supply a cooling medium to the temperature controller in a cooling state,
thereby maintaining the temperature of the inner wall of the chamber at 50 to 250 ℃ to prevent substances on the substrate vaporized or dried in the chamber from condensing on the inner wall of the chamber.
2. The substrate processing apparatus according to claim 1,
the substance is a volatile substance, which is gasified at 50 ℃ to 250 ℃.
3. The substrate processing apparatus according to claim 1,
the heater includes a rod-shaped heating element communicated from one side surface of the chamber to the other side surface.
4. The substrate processing apparatus according to claim 1,
a plurality of substrates are disposed within the chamber.
5. The substrate processing apparatus according to claim 1,
the air inlet is connected to one side of the outside of the chamber,
the air outlet is connected to the other side surface of the outside of the chamber.
6. The substrate processing apparatus according to claim 5,
at least one of the gas inlet or the gas outlet is further provided with a port for discharging the substance.
7. The substrate processing apparatus according to claim 1,
a plurality of substance discharge holes are formed at least one side of the chamber.
CN201580072720.1A 2014-11-18 2015-11-17 Substrate processing apparatus Active CN107210245B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020140161155A KR101661178B1 (en) 2014-11-18 2014-11-18 Apparatus for processing wafer
KR10-2014-0161155 2014-11-18
PCT/KR2015/012337 WO2016080729A1 (en) 2014-11-18 2015-11-17 Substrate processing apparatus

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CN107210245A CN107210245A (en) 2017-09-26
CN107210245B true CN107210245B (en) 2020-08-11

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WO (1) WO2016080729A1 (en)

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KR102313969B1 (en) * 2017-04-24 2021-10-19 주식회사 원익아이피에스 Apparatus for processing substrate
KR102243270B1 (en) * 2017-12-07 2021-04-22 주식회사 원익아이피에스 Apparatus for processing substrate
KR102423268B1 (en) * 2018-02-20 2022-07-21 주식회사 원익아이피에스 Apparatus for processing substrate
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