KR20190067567A - Apparatus for processing substrate - Google Patents

Abstract

Disclosed is a substrate processing apparatus. According to the present invention, the substrate processing apparatus, which vaporizes or dries substances on a substrate, includes: a main body (100) including a chamber (101) providing a substrate processing space; and a heating unit (200) heating the inside of the chamber (101), wherein a lower portion (BC) of the main body (100) has a shape in which a size of a flat cross sectional area becomes smaller from an upper end of the lower portion (BC) to a lower end of the lower portion (BC).

Description

[0001] APPARATUS FOR PROCESSING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus. More particularly, the present invention relates to an apparatus and a method for controlling a temperature of a main body of a main body, which includes a main body heat generating part for controlling a temperature of an inner side surface of the main body and an inclined angle to the shape of the main body, To a substrate processing apparatus capable of flowing condensed material along the inner surface of the main body.

A large amount of gas can be supplied and discharged inside the chamber in which the substrate is processed in the substrate processing apparatus used for manufacturing the display device or the semiconductor device. Such gas may be supplied to the chamber for the purpose of forming a thin film on the substrate, forming a pattern on the thin film on the substrate, ventilating the atmosphere inside the chamber, and the like, and may be discharged from the chamber to the outside.

In particular, in the process of manufacturing a flexible substrate, it is common to inject a solvent to separate the flexible substrate from the non-flexible substrate, and the solvent component injected or the solvent component contained in the flexible substrate is volatilized and discharged to the outside of the chamber have.

During the substrate processing process, there is a need to maintain a predetermined process temperature and process pressure inside the chamber. However, due to the temperature and pressure difference between the chamber and the inside of the chamber, the solvent component or gas may condense on the chamber inner wall. The condensed gas may be repeatedly vaporized and condensed in a repeated substrate processing process, reacted with gases of other chemical components, or degenerated under certain temperature conditions, thereby further contaminating the chamber inner wall.

As a result, the conventional substrate processing apparatus has a problem that the contaminated material on the inner wall of the chamber is re-evaporated during the subsequent substrate processing process and flows on the substrate to contaminate the substrate, thereby lowering the reliability of the product and lowering the yield.

Further, in the conventional substrate processing apparatus, there is a problem that the contaminated material is washed in the inner wall of the chamber, or the contaminated chamber wall itself needs to be replaced, thereby increasing the production cost of the product.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate processing apparatus capable of maintaining an inner wall of a main body at a predetermined temperature so that gas is not condensed on the inner wall of the main body.

It is another object of the present invention to provide a substrate processing apparatus in which the shape of a main body is changed so that a condensed material flows down on an inner wall of a chamber.

It is another object of the present invention to provide a substrate processing apparatus capable of rapidly maintaining the inner wall of a main body at a desired temperature by simultaneously using a temperature controller and a main body heat generating portion.

It is another object of the present invention to provide a substrate processing apparatus and a method for preventing condensation of volatile substances that can increase the reliability and yield of a product by keeping the chamber inner wall free from contamination.

According to an aspect of the present invention, there is provided a substrate processing apparatus for vaporizing or drying a substance on a substrate, comprising: a body including a chamber for providing a substrate processing space; A heating unit for heating the inside of the chamber; And a main body heat generating portion disposed on at least one of an edge where the inner surface of the main body contacts the upper surface of the main body or an edge where the inner surface of the main body contacts the lower surface of the main body, And has a shape in which the size of the flat area decreases from the upper end to the lower end.

The upper portion of the main body may have a shape in which the size of the flat area decreases from the upper lower end to the upper upper end.

The main body heat generating portion may be further disposed on at least one of the uppermost edge of the main body or the lowermost edge of the main body.

The body may have a hexagonal shape in a positive section.

The upper portion of the main body or the lower portion of the main body may be pyramid-shaped.

The material can be collected at the bottom of the body by being agglomerated at the inner side of the body and flowing down along the inner side.

The main body heat generating portion may maintain the temperature of the inner surface of the main body at 50 ° C to 250 ° C so that the material on the substrate to be vaporized or dried in the chamber is not condensed on the inner surface of the main body.

And a temperature control unit disposed on an outer surface of the main body and controlling a temperature of an inner surface of the main body, wherein an entrance and an entrance through which the substrate enters and exits are formed on a front surface of the main body, The door may be provided with a means for controlling the temperature of the door.

Wherein the temperature control unit maintains the temperature of the inner surface of the body at 50 to 250 DEG C so that the substance on the substrate to be vaporized or dried in the chamber is not condensed on the inner surface of the body, The adjusting means may maintain the temperature of the portion of the main body in contact with the door and the entrance so that the material does not condense in the portion of the main body in contact with the door and the entrance.

The material may be a volatile material that is vaporized at 50 ° C to 250 ° C.

The heating unit and the main body heat generating unit may include a bar-shaped heating element communicating from one side to the other side of the chamber.

A gas supply connected to one external side of the chamber to supply substrate processing gas into the chamber; And a gas discharge unit connected to the other outer side of the chamber and discharging the substrate processing gas in the chamber to the outside.

At least one of the gas supply unit and the gas discharge unit may further include a drain port for discharging the material.

A plurality of material discharge holes may be formed in at least one side surface of the chamber.

According to the present invention configured as described above, there is an effect that the inner wall of the main body can be maintained at a predetermined temperature so that gas is not condensed on the inner wall of the main body.

Further, according to the present invention, by changing the shape of the main body, there is an effect that the condensed material can flow down on the inner wall of the chamber.

Further, according to the present invention, the inner wall of the main body can be quickly maintained at a desired temperature by simultaneously using the temperature controller and the main body heat generating portion.

Further, according to the present invention, there is an effect that the reliability and yield of the product can be increased by keeping the chamber inner wall free from contamination.

1 is a perspective view showing the overall structure of a substrate processing apparatus according to an embodiment of the present invention.
2 is a front sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
3 is a schematic view showing the shape of the main body of the substrate processing apparatus according to the embodiment of the present invention.
4 is a schematic diagram illustrating operation of a temperature controller according to an embodiment of the present invention.
5 is a partially enlarged perspective view of a door and an entrance according to an embodiment of the present invention.
6 is a cross-sectional view illustrating a gas supply unit and a gas discharge unit according to an embodiment of the present invention.
FIG. 7 is a perspective view showing a state in which a discharge hole is formed in the substrate processing apparatus according to an embodiment of the present invention. FIG.
8 is a schematic view showing the shape of the main body of the substrate processing apparatus according to another embodiment of the present invention.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with an embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

In this specification, the substrate may be understood to include a substrate, a semiconductor substrate, a solar cell substrate, and the like used in a display device such as an LED and an LCD. Preferably, the substrate is a flexible substrate And the like.

In the present specification, the substrate processing step may be understood to include a deposition step, a heat treatment step, and the like. Preferably, the substrate processing step may include forming a flexible substrate on a non-flexible substrate, , Flexible substrate separation, and the like.

Also, in this specification, a substance on a substrate can be understood as a concept including both a substance in contact with the surface of the substrate and a substance that is not in contact with the surface of the substrate but exists on the upper side of the substrate.

Hereinafter, an inline thermal processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a front sectional view showing a substrate processing apparatus according to an embodiment of the present invention, and Fig. 3 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention. Fig. 2 is a schematic view showing the shape of the main body of the substrate processing apparatus according to the first embodiment;

1 to 3, the substrate processing apparatus according to the present embodiment may include a main body 100, a heating unit 200, and a main body heating unit 250.

The main body 100 constitutes a chamber 101 which is a closed space in which a substrate (not shown) is loaded and processed. The material of the main body 100 may be at least one of quartz, stainless steel, aluminum, graphite, silicon carbide, or aluminum oxide.

A plurality of substrates may be disposed in the chamber 101. The plurality of substrates may be disposed at regular intervals and may be supported in a substrate holder (not shown), or may be placed in a boat (not shown) and disposed inside the chamber 101.

An entrance 115, which is a passage through which the substrate is loaded / unloaded, may be formed on one surface (e.g., a front surface) of the main body 100. The entrance 115 may be formed on only one side (e.g., the front side) of the main body 100, or on the opposite side (e.g., the back side).

The door 110 may be installed on one side of the main body 100 (that is, the side on which the entrance 115 is formed). The door can be slidably mounted in the front-rear direction, the left-right direction, or the vertical direction. The door 110 can open and close the entrance 115 and can open and close the chamber 101 depending on whether the entrance 115 is open or closed. A sealing member 116 such as an O-ring is provided between the door 110 and the surface of the main body 100 where the door 115 is formed so that the door 115 is completely sealed by the door 110. [ See Fig. 5] may be interposed.

On the other hand, the reinforcing rib 120 can be coupled to the outer surface of the main body 100. The main body 100 may be damaged or deformed due to strong pressure or high temperature from the inside during the process. Therefore, the durability of the main body 100 can be improved by combining the reinforcing ribs 120 on the outer surface of the main body 100. Optionally, the reinforcing ribs 120 may be joined to only a portion of the outer surface or the outer surface.

The heat generating unit 200 includes a main heat generating unit 210 that heats the inside of the chamber 101 and functions to directly heat the substrate and an auxiliary And may include a heating unit 220.

The main heat generating unit 210 may be disposed at regular intervals in a direction perpendicular to the loading / unloading direction of the substrate (not shown), that is, in the front-rear direction of the main body 100, As shown in FIG. The auxiliary heating unit 220 is spaced vertically from the inner wall of the chamber 101 in the direction parallel to the loading / unloading direction of the substrate (not shown) And can be arranged.

The main heating unit 210 may include a plurality of heating elements 211 and terminals 212 provided at both ends of the heating elements 211. The auxiliary heating element 220 may also include a plurality of heating elements 221, And a terminal 222 provided at both ends of the heating element 221 of the heating element 221. The number of the heating elements 211 and 221 may be variously changed according to the size of the main body 100, the size and number of the substrates.

The heating elements 211 and 221 have a bar shape communicating from one side to the other side of the chamber 101 and may be formed by inserting a heating material into the quartz tube. The heating element 211 of the main heating part 210 may be communicated from the left side to the right side of the chamber 101 and the heating element 221 of the auxiliary heating part 220 may be connected to the outside of the chamber 115, And can be communicated from the front surface to the rear surface of the housing 101. The terminals 212 and 222 are supplied with power from an external power source (not shown) to generate heat from the heating elements 211 and 221.

Accordingly, the entire surface of the substrate 10 can be uniformly heated by the heat generating units 200 disposed at the upper and lower portions, thereby improving the reliability of the substrate processing process.

The main body of the conventional substrate processing apparatus generally has a cubic or rectangular parallelepiped shape. Since the front, rear, left and right sides of the body are formed perpendicular to the surface of the body, droplets (or condensed gases, substances) condensed by the gravity acting even when the material is condensed on this side can flow down. However, since the upper and lower surfaces of the body are formed parallel to the paper surface, they do not flow along the inner surface of the body if the material is condensed on this surface. That is, the droplet remains on the lower surface of the main body, and can not be discharged along the discharge port on the lower surface of the main body. In this case, in the substrate processing process where the condensed material is repeated, the inner wall of the chamber may be further contaminated by repeating evaporation and condensation, reacting with gases of other chemical components, or altering under a specific temperature environment.

2 and 3) of the main body 100 is smaller in size from the upper end BC1 of the lower portion BC to the lower end BC2 of the lower portion BC, And has a loose shape. The flat section is an xy plane and means that the width of the upper end BC1 of the lower portion BC1 of the main body 100 is larger than the width of the lower end BC2 of the lower portion BC of the main body 100 in the x-y plane. In other words, the lower surface of the main body 100 is not parallel to the paper surface, and at least one surface 100b constituting the front and rear left and right side surfaces 100a of the main body 100 and the bottom portion BC of the main body 100 are vertical And is formed to be inclined.

An angle (inclined angle) between the front, rear, left and right side surfaces 100a of the main body 100 and at least one surface 100b constituting the lower portion BC of the main body 100 may be 90 ° to 180 ° . However, if the angle is too close to 90 degrees, a condensed droplet may remain on the lower surface substantially like the conventional hexahedral body 100, and if the angle is close to 180 degrees, the height of the body 100 becomes unnecessarily high It is preferable to form an angle (a) of about 100 ° to 160 °, and more preferably an angle of 120 °.

The bottom portion BC of the main body 100 may be pyramid-shaped and the bottom portion 100a of the main body 100 may be divided into four portions, (BC) may have a quadrangular pyramid shape.

Alternatively, in order to satisfy the shape condition of the main body 100 without being a pyramid, the main body 100 may have a hexagonal shape in the forward end face. That is, it can have a hexagonal column standing up. In the present specification, a description will be given on the assumption that the main body 100 has a hexagonal front face. The hexagonal shape of the main body 100 means that the upper portion TC of the main body 100 has the same shape as the lower portion BC.

On the other hand, the surface roughness of the inner surface of the main body 100 can be made to be Ra 1.0 탆 or less so that the condensed droplets can flow down more easily. The surface roughness can be controlled by polishing. When the surface roughness Ra is 1.0 탆 or less, the effect of heat reflection on the inner surface of the main body 100 can be expected.

Since the body 100 has a shape in which the size of the flat surface area decreases from the upper end BC1 of the lower portion BC to the lower end BC2 of the lower portion BC, And the lower surface 100b of the main body 100 are formed to be inclined without being perpendicular to each other so that liquid droplets condensed on the inner surface of the main body 100 can be collected in the lower portion BC of the main body 100. [ The droplets condensed on the front, rear, left, and right inner sides of the main body 100 flow downward due to gravity, and are continuously inclined by gravity at the boundary between the front, rear, left and right side surfaces 100a and 100b of the main body 100 It is possible to flow along the lower surface 100b formed. Thus, the droplet can be collected at the lower end of the main body 100. The collected droplets can be discharged to the outside through the discharge means 130 and the pumping means (not shown) formed at the lower end of the main body 100, and can be reused or discarded.

On the other hand, the upper surface TC of the main body 100 may have a shape in which the size of the flat surface area decreases from the lower TC2 of the upper portion TC to the upper portion TC1 of the upper portion TC. In other words, the upper surface of the main body 100 is not parallel to the ground surface, and at least one surface 100c constituting the upper portion TC of the main body 100 and the front, rear, left and right side surfaces 100a of the main body 100 are perpendicular And can be formed by inclining.

An angle (inclined angle) b (angle formed by the front, rear, left and right side surfaces 100a of the main body 100 and at least one surface 100c constituting the upper portion TC of the main body 100) may be 90 ° to 180 ° . However, if the angle is too close to 90 °, a liquid droplet condensed in a substantially similar manner to the conventional hexahedral body 100 may remain on the upper surface, and if the angle is close to 180 °, the height of the body 100 may unnecessarily increase Lt; / RTI > Particularly, when the droplet condensed near 90 ° is left on the upper surface of the main body 100 and falls down on the substrate during the substrate processing process, the substrate may be contaminated. Therefore, the angle b formed by the front, rear, left and right side surfaces 100a of the main body 100 and at least one surface 100c constituting the upper surface of the main body 100 preferably has an angle of about 100 ° to 160 ° , And it is more preferable to form an angle of 120 [deg.].

Considering that the side surface 100a of the main body 100 is composed of four surfaces in the front, back, left, and right directions, the upper portion TC of the main body 100 may be pyramid- (TC) may be in the shape of a quadrangular pyramid.

The front and rear left and right side surfaces 100a and 100b of the main body 100 have a shape in which the size of the flat area decreases from the lower end TC2 of the upper body TC to the upper end TC1 of the upper body TC, And the upper surface 100c of the main body 100 are inclined without being perpendicular to each other so that liquid droplets condensed inside at least one surface 100c constituting the upper portion TC of the main body 100 100, respectively. That is, the liquid droplets condensed on the inside of at least one surface 100c constituting the upper portion TC of the main body 100 do not directly fall down onto the substrate but flow down along the inside, Passes through the side surface 100a, flows down to the lower end of the main body 100, and can be collected. The collected droplets can be discharged to the outside through the discharge means 130 and the pumping means (not shown) formed at the lower end of the main body 100, and can be reused or discarded.

The substrate processing apparatus of the present invention is characterized in that main heaters 250 (250a, 250c, and 250d) are disposed at corner portions where a surface of the main body 100 is in contact with a surface. More specifically, the edge of the boundary where the inner surface 100a of the main body 100 and the upper surface 100c of the main body 100 are in contact with each other or the inner surface 100a of the main body 100 and the bottom of the main body 100, And main heaters 250c and 250d are disposed on at least one of the corner portions of the boundary where the surface 100b contacts.

When the top surface of the main body 100 has a hexagonal shape, the top edge (TC1 corner of the upper portion TC) or the bottom edge BC2 of the bottom edge BC2 of the main body 100 The main body heat generating portions 250a and 250b may be disposed.

The main heater 250 may function to control the temperature of the inner wall of the main body 100 by heating the inner surfaces 100a, 100b, and 100c of the main body 100, rather than heating the inside of the chamber 101. [ By controlling the temperature of the inner wall of the main body 100, volatile substances to be described later can be present in a gaseous state without being condensed on the inner wall of the main body 100. Preferably, the main body heater 250 can maintain the inner wall temperature of the main body 100 at 50 ° C to 250 ° C.

Particularly, a shape in which the size of the flat area decreases from the upper end BC1 of the lower portion BC of the main body 100 to the lower end BC2 of the lower portion BC, When the top surface of the main body 100 has a hexagonal shape, heat is uniformly transmitted to the corner portion, and a large amount of volatile substances are condensed . Therefore, it is preferable that the main heater 250 be disposed concentrically at the corner portion or the bent portion of the main body 100. [

In addition, the main heater 250 may be further disposed on the upper side 100c and the lower side 100b, which have a large area in the inner surface of the main body 100 and are highly likely to contain volatile substances on the inner wall. In addition, one main body heat generating part 250 can be disposed for each corner, and a plurality of main body heat generating parts 250 can be arranged intensively.

The main heater 250 may have a bar shape communicating from one side to the other side of the main body 100 like the heater 200 and may have a shape in which a heating material is inserted into the quartz tube, (251) and a terminal (252). The main heater 250 is disposed in a direction perpendicular to the loading / unloading direction of the substrate 10 (the same direction as the main heater 210), but the present invention is not limited thereto, It is possible to freely arrange it within the range where it is disposed at the corner portion.

Referring to FIGS. 1 and 2 again, the substrate processing apparatus may further include a gas supply unit 300 and a gas discharge unit 400.

The gas supply part 300 is connected to one external side (for example, the left side) of the chamber 101 (or the main body 100), and the gas discharge part 400 is connected to the chamber 101 (or the main body 100) (E.g., the right side) of the outer frame.

The gas supply unit 300 may provide a passage for supplying substrate processing gas into the interior of the chamber 101. The gas supply unit 300 includes a gas supply pipe 320 connected to the gas storage unit (not shown) and supplied with the substrate process gas, and a plurality of gas discharge pipes 310 formed at regular intervals in the gas supply pipe 320 . The gas discharge pipe 310 can be connected to the inside of the chamber 101 through the main body 100 and the substrate processing gas can be supplied to the chamber 101 through the gas discharge hole 311 formed at the end of the gas discharge pipe 310, As shown in FIG.

The gas discharge portion 400 may provide a passage for discharging the substrate processing gas inside the chamber 101 to the outside. The gas discharge unit 400 includes a gas discharge pipe 420 connected to an external gas discharging facility (not shown) for discharging substrate processing gas and a plurality of gas discharge pipes 410 ). The gas discharge pipe 410 may be connected to the inside of the chamber 101 through the main body 100 and may be connected to the outside of the chamber 101 through the gas discharge hole 411 formed at the end of the gas discharge pipe 410 Can be discharged.

When the plurality of substrates 10 are accommodated in the chamber 101, the gas discharge hole 311 (or the gas discharge pipe 310) and the gas discharge hole 411 (or the gas discharge pipe 410) It is preferable that the gas is uniformly supplied to the substrate and positioned at a distance between the substrate disposed in the chamber 101 and the substrate adjacent to the upper or lower portion so that the substrate processing gas can be easily sucked and discharged to the outside .

In accordance with an embodiment of the present invention, the substrate processing apparatus processes a flexible substrate used in a flexible display device.

Generally, the manufacturing process of the flexible substrate can be divided into a step of forming a flexible substrate on the non-flexible substrate, a step of forming the pattern on the flexible substrate, and a step of separating the flexible substrate from the non-flexible substrate.

The flexible substrate is formed by forming a film composed of polyimide or the like on a non-flexible substrate such as glass or plastic, curing the substrate by heat treatment, and then injecting the solvent into a substance that adheres to the non-flexible substrate and the flexible substrate, Or the adhesive material is decomposed to separate the flexible substrate from the non-flexible substrate.

At this time, the solvent component to be injected or the solvent component contained in the flexible substrate during the process of forming the flexible substrate may be volatilized and may be discharged to the outside of the chamber 101 through the gas discharge unit 400. However, A predetermined portion of the inner wall of the chamber 101 may be formed with a low temperature on the inner wall of the chamber 101 so that the material can not volatilize and be condensed due to a difference in temperature and pressure inside the chamber 101. As a result, the solvent component condensed on the inner wall of the chamber 101 may cause a problem of contaminating the chamber 101 or contaminating the substrate 10 in a subsequent process. In one example, the material present on at least a portion of the surface of the substrate 10 may be a volatile material, such as a solvent, and may be a material that is vaporized at 50 ° C to 250 ° C. Such a material may preferably be N-methyl-2-pyrrolidone (NMP), or may be a volatile substance such as IPA, Acetone, and PGMEA (Propylene Glycol Monomethyl Ether Acetate).

Accordingly, when the gas in the chamber 101 including the solvent is condensed on the inner wall of the chamber 101, the condensed droplet does not remain on the inner wall of the chamber 101 (or on the inner wall of the main body 100) (A, b) inclined to the shape of the main body 100 so as to be collected at the lower end of the main body 100 in such a manner that the main body 100 is allowed to flow down.

According to the present invention, the condensed material can flow out to the outside through a simple configuration in which the shape of the main body 100 is changed, thereby keeping the chamber inner wall free from contamination, thereby improving the reliability and yield of the product have.

In addition, the inner wall temperature of the main body 100 is maintained so that the gas does not condense so that the condensed liquid droplet is discharged to the outside even in a gaseous state without remaining in the inner wall of the chamber 101. By placing the main heater section 250 in the corner portion of the main body 100 where condensed droplets are more concentrated, the condensed droplets are volatilized into a gaseous state, thereby keeping the inner wall of the chamber uncontaminated, It is possible to increase the reliability and yield.

The substrate processing apparatus of the present invention may further include a temperature control unit 500 for controlling the temperature of the wall of the main body 100 or the inside of the chamber 101 after the substrate processing process or the substrate processing process, And can be operated.

The temperature control unit 500 may be disposed adjacent to the outer surface of the main body wall or spaced apart from the outer surface of the main body wall by a predetermined distance and may be disposed in a zigzag fashion such as a pipe through which a heat medium or a refrigerant . The temperature control unit 500 controls the temperature of the inner wall of the main body 100 to a predetermined value so that the substance volatized on the substrate 10 during the substrate processing process and the substances supplied to and discharged from the chamber 101 are not condensed on the inner wall of the main body 100, Lt; RTI ID = 0.0 > temperature. ≪ / RTI > Preferably, the inner wall temperature of the main body 100 can be maintained at 50 캜 to 250 캜.

The temperature control unit 500 may be disposed on all the outer surfaces of the main body 100. The temperature control unit 500 may be disposed on the outer surface of the main body 100 such that the temperature of the inner wall of the main body 100 is maintained at a predetermined temperature, The arrangement of the temperature control unit 500 may be omitted on some outer surfaces.

4 is a schematic diagram showing the operation of the temperature controller 500 according to an embodiment of the present invention.

Referring to FIG. 4, a 3-way valve (3WV) may be installed between the temperature controller 500, the main body wall heating module 600 and the main body wall cooling module 700. The main body wall heating module 600 can be understood as an apparatus for heating and supplying the coolant including a heat exchanger capable of instantly raising the temperature of the process cooling water PCW, Can be understood as an apparatus for supplying cooling water.

As an example, in the substrate processing process, the substrate processing temperature inside the chamber 101 (or the main body 100) may rise step by step from 80 占 폚 to 150 占 폚, 150 占 폚 to 250 占 폚, 250 占 폚 to 350 占 폚, . At the beginning of the substrate processing, the substrate processing temperature inside the chamber 101 is about 80 DEG C, so that the temperature of the inner wall of the main body 10 may be lower than 60 to 80 DEG C and the volatile substance having the evaporation zone of about 80 to 150 DEG C The NMP is likely to be condensed on the inner wall of the main body 100. Accordingly, at the initial stage of the substrate processing, by controlling the three-way valve 3WV to supply the cooling water from the main body wall heating module 600 to the temperature control unit 500 (P1), the temperature of the main wall is reduced to the minimum evaporation zone of the NMP It can be maintained at 80 DEG C or higher.

The main body heat generating unit 250 can control the temperature of the main body wall more quickly than the temperature control unit 500 and can effectively prevent volatile substances from condensing on the inner wall of the main body 100. That is, the temperature of the main body wall can be maintained at 80 ° C or more, which is the minimum evaporation zone of NMP, by controlling the main body heat generating unit 250. Of course, it is also possible to use a combination of the main body heat generating unit 250 and the temperature controller 500.

The main body wall heating module 600 is operated when the substrate processing temperature inside the chamber 101 is 300 DEG C or less and the 3-way valve 3WV is operated when the substrate processing temperature inside the chamber 101 exceeds 300 DEG C (P2) by supplying cooling water from the main body wall cooling module 700 to the temperature control unit 500. The temperature of the main wall can be maintained at 80 ° C or more, which is the minimum evaporation zone of NMP. Of course, if the substrate processing temperature in the chamber 101 exceeds 300 ° C, the temperature of the main body wall may be 80 ° C or more even if the cooling water is not supplied to the temperature control unit 500. However, It is necessary to properly supply the cooling water to the temperature control unit 500 through the main body wall cooling module 700 because the wall of the main body may be distorted or broken when the temperature exceeds 80 to 250 ° C . In other words, if the substrate processing temperature inside the chamber 101 is 300 ° C or lower, the main body wall heating module 600 is operated. If the substrate processing temperature inside the chamber 101 exceeds 300 ° C, The temperature of the inner wall of the main body 100 can be maintained at 50 ° C to 250 ° C.

5 is a partially enlarged perspective view of a door 110 and an entrance 115 according to an embodiment of the present invention.

Referring to FIG. 5, the door 110 may be provided with a means for controlling the temperature of the door 110. Hereinafter, the door heating unit 230, which is a wire heater and a plate heater, is assumed to be a temperature control unit of the door 110, but the present invention is not limited thereto, and a known technology for controlling the temperature of the door 110 may be applied .

The door 110 may be installed on one surface of the main body 100 (that is, the surface on which the entrance 115 is formed) through the sealing member 116 so that the entrance 115 can be sealed. The portion IC of the main body 100 in which the drawing 110 and the entrance 115 are in contact with each other, that is, the interfacial portion IC, is increased by a temperature difference between the outside of the chamber 101 and the inside of the chamber 101, Materials, etc. may condense. Of course, condensed droplets can flow down along the inner surface of the main body 100, but there is a high possibility that a droplet will remain in the interface portion IC due to a large amount.

Therefore, by providing the door 110 with the means for regulating the temperature of the door 110, that is, the door heating body 230, the door 110 can be prevented from being in contact with the portion IC of the main body 100, Heat can be generated to maintain the temperature between 50 ° C and 250 ° C. Since the temperature of 50 to 250 占 폚 is maintained, gas and material can be vaporized on the inner wall of the chamber 101 without condensation. Thus, there is an effect that contaminants in the portion (IC) of the main body 100 where the door 110, which is likely to remain a droplet, and the entrance 115 are in contact with each other can be prevented.

Meanwhile, the substrate processing apparatus of the present invention may further comprise means for discharging the condensed gas. The following description will be made with reference to Figs. 6 and 7. Fig.

6 is a cross-sectional view illustrating a gas supply unit 300 and a gas discharge unit 400 according to an embodiment of the present invention. 6 (a) shows a gas supply part 300, and FIG. 6 (b) shows a gas discharge part 400. FIG.

The gas supply part 300 and the gas discharge part 400 connected to the outer side surface (for example, the left side surface) and the outer side surface (for example, the right side surface) of the chamber 101 are affected by the low external temperature, Can easily be condensed. The condensed gas is condensed in the pipe of the gas supply unit 300 and is discharged into the chamber 101 together with the supply of the substrate processing gas during the substrate processing process, thereby causing contamination of the substrate.

6 (a), the gas supply unit 300 may further include a drain port 330 capable of discharging the condensed gas (or condensed volatile substance) . The drain port 330 may be a passage through which condensed droplets flow, or may be connected to a pump (not shown) to have a suction function to suck air. The gas may be supplied through the gas supply pipe 320 and the condensed gas may be discharged through the drain port 330 in the gas supply unit 300.

The gas discharge unit 400 may also have a drain port (not shown) connected to the gas discharge pipe 420 in the same manner as the gas supply unit 300.

6 (b), since the gas discharging unit 400 serves to discharge the gas inside the chamber 101 to the outside, the gas discharging unit 400 is provided with a drain port (not shown) The gas inside the chamber 101 is discharged (g) to the outside so that the end portion 430 of the gas discharge pipe 420 can also serve as a drain port without condensation Gas (d) can be discharged to the outside.

FIG. 7 is a perspective view showing a state where a discharge hole 140 (140a, 140b, 140c) is formed in a substrate processing apparatus according to an embodiment of the present invention.

7, the left and right sides of the chamber 101 in which at least one side of the chamber 101, specifically the gas supply unit 300 and the gas discharge unit 400 described with reference to FIG. 5, A plurality of exhaust holes 140 (140a, 140b, 140c) may be formed on the side excluding the side surface. The discharge hole 140 may be connected to an externally disposed pumping means (not shown) to effectively discharge the condensed material inside the chamber 101.

100b, and 100c of the main body 100, although the droplets condensed in the inside 100a, 100b, and 100c of the main body 100 may flow downward along the inside 100a, 100b, and 100c by gravity, Lt; RTI ID = 0.0 > 100c. ≪ / RTI > Accordingly, even if a plurality of discharge holes 140 are formed on the inner surfaces 100a, 100b and 100c so that the gas is condensed and remains on the inner wall of the chamber 101, The contamination of the inner wall of the chamber 101 can be prevented more effectively, and the reliability and yield of the product can be further increased.

8 is a schematic view showing the shape of a main body 100 of a substrate processing apparatus according to another embodiment of the present invention.

The substrate processing apparatus of the present invention has a shape such that the bottom area BC of the main body 100 has a reduced area in the area from the lower end BC1 to the lower end BC2, If the condensed droplet is allowed to flow downward along the inner side of the main body 100 by the gravity, it is possible to reduce the size of the area There is no limitation. It may be configured not only as a hexagonal positive section but also as an octagonal or more polygonal section as shown in Fig.

The main heater 250 (250a, 250b, 250c, 250d) may be disposed at an edge portion where the surface of the main body 100 is in contact with the surface.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

100:
101: chamber
110: Door
120: reinforcing rib
130: discharge means
140: Exhaust hole
200:
210: Main heating part
220: auxiliary heating part
230: Door heating part
250:
300: gas supply part
400: gas discharge portion
500: cooling section
BC: Lower part of main body
BC1: Lower part of main body
BC2: Lower part of main body lower part
TC: Body top
TC1: upper body top
TC2: Lower part of main body
a, b: angle

Claims (14)

A substrate processing apparatus for vaporizing or drying a substance on a substrate,
A body including a chamber for providing a substrate processing space;
A heating unit for heating the inside of the chamber; And
Wherein the main body heat generating portion is disposed at an edge where the inner surface of the main body contacts the upper surface of the main body or at an edge where the inner surface of the main body and the lower surface of the main body come into contact with each other,
/ RTI >
Wherein the lower portion of the main body has a shape in which the size of the flat surface area decreases from the lower end to the lower end. The method according to claim 1,
Wherein an upper portion of the main body has a shape in which the size of a flat area decreases from an upper lower end to an upper upper end. 3. The method of claim 2,
Wherein the main body heat generating portion is further disposed on at least one of the uppermost edge of the main body or the lowermost edge of the main body. The method according to claim 1,
Wherein the main body has a hexagonal shape in the front section. 3. The method of claim 2,
Wherein an upper portion of the main body or a lower portion of the main body has a pyramid shape. The method according to claim 1,
Wherein the material is collected at the lower end of the body by being agglomerated at the inner side of the body and flowing down along the inner side. The method according to claim 1,
Wherein the main body heat generating portion maintains the temperature of the inner surface of the main body at 50 to 250 DEG C so that the material on the substrate to be vaporized or dried in the chamber is not condensed on the inner surface of the main body. The method according to claim 1,
And a temperature control unit disposed on an outer surface of the main body and controlling the temperature of the inner surface of the main body,
A door for opening and closing the door is provided on the front surface of the main body,
Wherein the door is provided with a means for controlling the temperature of the door. 9. The method of claim 8,
Wherein the temperature control unit maintains the temperature of the inner surface of the body at 50 DEG C to 250 DEG C so that the substance on the substrate that is vaporized or dried in the chamber is not condensed on the inner surface of the body,
The temperature of the door is controlled to maintain the temperature of the portion of the main body in contact with the door and the door at 50 to 250 DEG C so that the material is not condensed in the portion of the main body in contact with the door and the doorway The substrate processing apparatus. 10. The method according to claim 7 or 9,
Wherein the material is a volatile material that is vaporized at 50 占 폚 to 250 占 폚. The method according to claim 1,
Wherein the heating unit and the main body heat generating unit include bar-shaped heating elements communicating from one side to the other side of the chamber. The method according to claim 1,
A gas supply connected to one external side of the chamber to supply substrate processing gas into the chamber; And
A gas discharge port connected to the other outer side surface of the chamber for discharging the substrate processing gas in the chamber to the outside,
Wherein the substrate processing apparatus further comprises: 13. The method of claim 12,
Wherein at least one of the gas supply unit and the gas discharge unit further comprises a drain port for discharging the substance. The method according to claim 1,
And a plurality of material discharge holes are formed on at least one side surface of the chamber.

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