TWI413201B - A substrate processing apparatus, a substrate processing method, a program and a memory medium - Google Patents

Abstract

PURPOSE: A substrate treating apparatus, a substrate treating method, and a storage medium are provided to maintain a gas inside a chamber into a temperature lower than a temperature of a chamber wall at a short time by supplying mist of a fluid state to an inner part of the chamber after heating the chamber wall in a drying unit. CONSTITUTION: A solution treating tub(6) stirs a cleaning solution of a substrate. A chamber wall(60) is formed inside a chamber(5). A heating part for the chamber wall heats the chamber wall. A fluid mist supply part supplies a mist of a fluid state to an inner part of the chamber. A drying gas supply part supplies a drying gas to an inner part of the chamber. A maintaining part(26) moves the substrate in between an inner part of the solution treating tub and an inner part of the chamber of the drying unit.

Description

Substrate processing device, substrate processing method, program, and memory medium

The present invention relates to a substrate processing apparatus which immerses a substrate such as a semiconductor wafer or a glass substrate for LCD in a cleaning liquid such as a chemical liquid or an eluent, and then dries the substrate which has been subjected to the cleaning by a drying unit. The substrate processing method, the program, and the memory medium are, in particular, a substrate processing apparatus, a substrate processing method, a program, and a memory medium that can improve the drying performance of the substrate in the drying unit.

In general, in a manufacturing process in a semiconductor manufacturing apparatus, a substrate such as a semiconductor wafer or a glass for LCD (hereinafter referred to as a wafer) is sequentially immersed in a cleaning liquid such as a chemical liquid or an eluent. A washing treatment method in which the tank is washed and washed is widely used. In addition, a dry gas composed of a vapor of a volatile organic solvent such as IPA (isopropyl alcohol) is brought into contact with the surface of the cleaned wafer or the like to condense or adsorb the vapor of the dry gas on the surface of the wafer or the like. Thereafter, an inert gas such as N ₂ gas (nitrogen gas) is supplied to the surface of the wafer or the like, and a drying treatment method for removing and drying moisture on the surface of the wafer or the like is known.

In the substrate processing apparatus which performs both the cleaning processing method and the drying processing method, a cleaning tank for storing a cleaning liquid such as a chemical liquid or a rinse liquid is provided, and the cleaning tank is provided above the cleaning tank. A drying unit that dries the wafer immersed in the cleaning liquid of the cleaning tank. The drying unit has a chamber wall in which a chamber (drying chamber) is formed inside, and the wafer of the cleaning liquid immersed in the cleaning tank is moved into a chamber of the drying unit, and is supplied in the chamber. Drying of the wafer is performed by drying the gas (see, for example, Patent Documents 1, 2, etc.).

In the conventional substrate processing apparatus shown in the patent documents 1 and 2, first, a wafer or the like is immersed in a cleaning liquid stored in a cleaning tank, and the wafer or the like is washed. At this time, high-temperature N ₂ gas having a temperature higher than the atmospheric temperature outside the chamber wall is supplied to the chamber in advance, the chamber is filled with the high-temperature gas, and the chamber wall is heated. Here, in order to heat the chamber wall, a heater may be provided on the chamber wall to heat the chamber wall by the heater instead of a high temperature which is higher than the temperature of the atmosphere outside the chamber wall. N ₂ gas is supplied into the chamber. At this time, also when the chamber wall is heated by the heater, the gas system in the chamber is heated by the heated chamber wall to form a high temperature gas.

Thereafter, the wafer is pulled up from the cleaning liquid in the cleaning tank and moved into the chamber of the drying unit, and the chamber is sealed in a sealed state by a door or the like. Next, a dry gas is supplied into the chamber, and the dry gas is brought into contact with the surface of the wafer or the like, whereby the vapor of the dry gas is condensed or adsorbed on the surface of the wafer. Thereafter, the inert gas is supplied to the surface of the wafer or the like to remove and dry the moisture on the surface of the wafer or the like.

(Patent Document 1) Japanese Patent Laid-Open No. Hei 10-154688

(Patent Document 2) Japanese Patent Laid-Open Publication No. 2007-5479

In the substrate processing apparatus as described above, the temperature of the atmosphere outside the chamber wall is higher than when the wafer is pulled up from the cleaning liquid in the cleaning tank and moved to the chamber of the drying unit. The high temperature N ₂ gas of the temperature is supplied to the chamber in advance, the chamber is filled with the high temperature gas, and the chamber wall is heated. In order to preheat the chamber wall before moving the wafer into the chamber, if the temperature of the chamber wall is low, when dry gas is supplied into the chamber, the dry gas is passed through the chamber wall After cooling and condensing, the amount of dry gas condensed or adsorbed on the surface of the wafer is reduced, and the drying performance of the wafer is deteriorated.

However, if the chamber wall is heated, the gas in the chamber is also formed as a high-temperature gas, so when the wafer is pulled up by the cleaning liquid in the cleaning tank and moved to the chamber of the drying unit, the crystal The temperature of the circle will also rise. If the wafer temperature rises, the amount of dry gas condensed or adsorbed on the surface of the wafer is reduced, and there is a fear that the drying performance of the wafer is lowered.

As described above, the inventors of the present invention found that when the wafer is dried in the drying unit, the chamber wall is maintained at a high temperature, and when the gas in the chamber is formed to a temperature lower than the atmospheric temperature, the dry gas can be prevented from being borrowed. It is cooled and condensed by the chamber wall, and the temperature rise of the wafer moved into the chamber can be suppressed, and the amount of dry gas condensed or adsorbed on the surface of the wafer can be prevented from being reduced.

Further, in a stage before the wafer is pulled up from the cleaning liquid in the cleaning tank and moved to the chamber of the drying unit, the chamber is formed into a dry chamber by supplying high-temperature N ₂ gas into the chamber or the like. In the state, when the wafer is moved into the chamber of the drying unit, the moisture adhering to the wafer is naturally dried, and a watermark is formed on the surface of the wafer.

The present invention has been made in view of the circumstances as described above, and an object thereof is to provide a method of preventing a decrease in the amount of dry gas which is condensed or adsorbed on a surface of a substrate in a chamber of a drying unit, and suppressing the movement of the substrate into the chamber. A watermark is formed on the surface of the substrate, whereby the substrate processing apparatus, the substrate processing method, the program, and the memory medium for improving the drying performance of the substrate in the drying unit can be improved.

A substrate processing apparatus according to the present invention includes: a cleaning tank for storing a cleaning liquid for a substrate; and a drying unit that is a drying unit disposed in the vicinity of the cleaning tank and has a chamber in which a chamber is formed inside. a chamber wall, a chamber wall heating portion for heating the chamber wall, a fluid mist supply portion for supplying a fluid mist in the chamber, and a dry gas supply portion for supplying a dry gas in the chamber; a holding portion for holding the substrate And moving the substrate between the cleaning chamber and the chamber of the drying unit; and the control unit is configured to perform the chamber wall heating unit, the fluid mist supply unit, the drying gas supply unit, and the holding unit The control unit first controls the substrate to be immersed in the cleaning liquid stored in the cleaning tank, and then the chamber wall is heated by the chamber wall heating unit in the drying unit, and then supplied by the fluid mist. The fluid mist is supplied into the chamber, and then the substrate is moved from the inside of the cleaning tank to the chamber of the drying unit by the holding portion, during which the substrate is After moving into the chamber of the drying unit, the chamber wall heating unit, the fluid mist supply unit, the drying gas supply unit, and the holding are performed by supplying dry gas to the chamber through the drying gas supply unit. Departmental control.

In addition, the substrate processing method of the present invention includes a cleaning tank for storing a cleaning liquid for a substrate, and a substrate processing method in a substrate processing apparatus of a drying unit disposed in the vicinity of the cleaning tank, and is characterized in that There is a process of immersing a substrate in a cleaning liquid stored in the cleaning tank; in the drying unit, heating a chamber wall in which a chamber is formed inside; after heating the chamber wall, a process of supplying a fluid mist in a chamber of the drying unit; after the fluid mist is supplied into the chamber, moving the substrate from the inside of the cleaning chamber to the chamber; and moving the substrate from the cleaning tank to After the chamber of the drying unit is moved, or after the substrate is moved from the inside of the cleaning tank to the chamber of the drying unit, the drying gas is supplied into the chamber.

According to the substrate processing apparatus and the substrate processing method of the present invention, first, the chamber wall is heated in the drying unit, and then the fluid mist is supplied into the chamber, whereby the gas in the chamber is cooled by the fluid mist, and then the substrate is made. Moved from the inside of the washing tank to the chamber of the drying unit. Next, the substrate is dried by supplying a dry gas in the chamber.

As described above, after the chamber wall is heated in the drying unit, the fluid mist is supplied into the chamber, whereby the gas in the chamber is cooled by the fluid mist, whereby the chamber wall can be maintained at a high temperature while the chamber is maintained. The indoor gas is formed to a temperature lower than the temperature of the chamber wall in a short time.

Therefore, while preventing the drying gas from being cooled by the chamber wall and being condensed, the temperature of the substrate moved into the chamber is prevented from rising, and the amount of drying gas which is condensed or adsorbed on the surface of the substrate can be prevented from being reduced. Thereby, the drying performance of the substrate in the drying unit can be improved.

Further, a fluid mist is supplied into the chamber before the substrate is moved into the chamber of the drying unit, whereby the chamber can be pre-humidified in advance. Therefore, when the substrate is moved into the chamber, the chamber is humidified, so that the moisture adhering to the substrate before the drying gas is condensed or adsorbed on the substrate surface can be naturally dried. Thereby, it is possible to suppress the formation of a watermark on the surface of the substrate after the substrate is moved into the chamber.

In the substrate processing apparatus of the present invention, the temperature of the fluid mist supplied into the chamber by the fluid mist supply unit is preferably substantially the same as or higher than the temperature of the atmosphere outside the chamber wall. low.

In the substrate processing apparatus of the present invention, the fluid mist supplied into the chamber by the fluid mist supply portion is preferably pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof. The fluid mist formed.

In the substrate processing apparatus of the present invention, preferably, the fluid mist supply unit has a two-fluid nozzle, and the fluid mist is generated by the two-fluid nozzle. Alternatively, the fluid mist supply unit may have a collision type mist generator, and the collision mist generator generates a fluid mist.

In the substrate processing apparatus of the present invention, it is preferable that the drying unit further has a cooling gas supply unit that supplies a cooling gas belonging to a gas having a temperature lower than an atmospheric temperature outside the chamber wall to the chamber. The control unit is configured to heat the chamber wall by the chamber wall heating unit in the drying unit, and move the substrate from the inside of the cleaning tank to the chamber of the drying unit by the holding portion, The cooling gas supply unit controls the cooling gas supply unit such that the cooling gas is supplied into the chamber.

In the substrate processing apparatus of the present invention, it is preferable that the fluid mist supply unit intermittently supplies the fluid mist in the chamber.

In the substrate processing apparatus of the present invention, it is preferable that the control unit performs the fluid mist so that the supply amount of the fluid mist supplied into the chamber by the fluid mist supply unit does not exceed a predetermined amount set in advance. Control of the supply department.

In the substrate processing apparatus of the present invention, it is preferable that the chamber wall heating portion supplies a gas having a temperature higher than an atmospheric temperature outside the chamber wall to a heating gas supply portion in the chamber. Alternatively, the chamber wall heating portion may be a heater provided on the chamber wall.

In the substrate processing apparatus of the present invention, it is preferable that the drying gas system supplied to the chamber by the drying gas supply unit is composed of vapor of an organic solvent.

In the substrate processing method of the present invention, it is preferable that the temperature of the fluid mist supplied into the chamber is substantially the same as or lower than the temperature of the atmosphere outside the chamber wall.

In the substrate processing method of the present invention, it is preferable that the fluid mist supplied into the chamber is a fluid mist composed of pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof.

In the substrate processing method of the present invention, preferably, after the chamber wall is heated, the substrate is moved from the inside of the cleaning tank to the chamber of the drying unit, and the ratio is located in the chamber wall. An external atmosphere is a process in which a cooling gas of a gas having a low temperature is supplied to the chamber.

In the substrate processing method of the present invention, it is preferable that the fluid mist is intermittently supplied into the chamber during the process of supplying the fluid mist into the chamber.

In the substrate processing method of the present invention, preferably, in the process of supplying the fluid mist into the chamber, the supply amount of the fluid mist in the chamber does not exceed a predetermined amount.

In the substrate processing method of the present invention, preferably, when the chamber wall is heated, a gas having a temperature higher than an atmospheric temperature outside the chamber wall is supplied into the chamber, and is supplied to the chamber. The gas in the chamber heats the wall of the aforementioned chamber. Alternatively, it is preferred to heat the chamber wall by heating a wall provided in the chamber wall while heating the chamber wall.

The program of the present invention is a program that can be executed by a control computer including a cleaning tank having a cleaning liquid for storing a substrate and a substrate processing device disposed in a drying unit in the vicinity of the cleaning tank, and is characterized in that: In the substrate processing method, the substrate processing method includes a process of immersing the substrate in a cleaning liquid stored in the cleaning tank, and executing the program by the control computer controlling the substrate processing apparatus; In the drying unit, a process of heating a chamber wall in which a chamber is formed; after heating the chamber wall, supplying a fluid mist in a chamber of the drying unit; after supplying a fluid mist in the chamber a process of moving the substrate from the inside of the cleaning chamber into the chamber; and moving the substrate from the inside of the cleaning chamber to the chamber of the drying unit, or moving the substrate from the inside of the cleaning tank to the foregoing After the chamber of the drying unit, the drying gas is supplied to the chamber.

The memory medium of the present invention stores a memory medium that can be executed by a control computer including a cleaning tank having a cleaning liquid for storing a substrate and a substrate processing device of a drying unit disposed in the vicinity of the cleaning tank. In the substrate processing method, the substrate processing method is performed by the control computer controlling the substrate processing apparatus by performing the program, and the substrate processing method includes: immersing the substrate in the cleaning tank to be stored in the cleaning tank Engineering of a liquid; in the drying unit, a process of heating a chamber wall that internally forms a chamber; and after heating the chamber wall, supplying a fluid mist in a chamber of the drying unit; After the fluid mist is supplied indoors, the substrate is moved into the chamber from the cleaning chamber; and the substrate is moved from the inside of the cleaning tank to the chamber of the drying unit, or the substrate is washed. After the inside of the tank is moved into the chamber of the drying unit, the drying gas is supplied to the chamber.

The substrate drying apparatus, the substrate processing method, the program, and the memory medium of the present invention can improve the drying performance of the substrate in the drying unit.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 1 to Fig. 4 are views showing a substrate processing apparatus of the present embodiment. 1 is a schematic view showing a schematic structure of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic view of the substrate processing apparatus shown in FIG. 1 viewed from the side. In addition, FIG. 3 is an explanatory view showing a schematic structure of a fluid mist nozzle of the substrate processing apparatus shown in FIG. In addition, FIG. 4 is a flowchart showing an operation of the chemical liquid processing, the cleaning processing, and the drying processing of the substrate by the substrate processing apparatus shown in FIG. 1 .

In the present embodiment, a plurality of semiconductor wafers (hereinafter simply referred to as "wafers") having a predetermined circuit pattern formed by photolithography, for example, by a predetermined chemical liquid collective processing, are exemplified, and then borrowed. A device such as washing with pure water (DIW) and drying treatment.

1 and 2 are schematic structural views showing the substrate processing apparatus 1. The substrate processing apparatus 1 includes a liquid processing unit 2 that performs a chemical liquid treatment or a cleaning process of the wafer W, and a crystal that is disposed above the liquid processing unit 2 and that has been subjected to the cleaning treatment in the liquid processing unit 2 The drying process unit 3 which dries the circle W. Here, the liquid processing unit 2 performs the predetermined chemical liquid (for example, dilute hydrofluoric acid aqueous solution (DHF), ammonia-hydrogen peroxide water (APF), sulfuric acid-hydrogen peroxide water (SPM), etc.) on the wafer W. The treatment is followed by washing with pure water (DIW). Further, the substrate processing apparatus 1 can hold the plurality of wafers W, and is provided with the wafer guides 4 that are moved (lifted and lowered) between the liquid processing unit 2 and the drying processing unit 3 by the elevating mechanism 7. A fan filter unit (FFU, not shown) is disposed above the substrate processing apparatus 1. By the fan filter unit, the cleaned air is supplied as a downward flow in the substrate processing apparatus 1.

As shown in FIG. 2, the wafer guide 4 has a holding portion 26 which can be arranged in a substantially vertical posture and which is arranged at a constant interval in the horizontal direction and holds, for example, a wafer W of at most 50 pieces; and a support holding portion 26; Pillar part 27. The pillar portion 27 penetrates the lid portion 60b of the chamber wall 60 in which the chamber 5 is formed.

The liquid processing unit 2 includes a casing 13 and a liquid processing tank 6 housed in the casing 13. The liquid processing tank 6 has an inner tank 30, an intermediate tank 31 formed to surround the upper opening of the inner tank 30, and an outer tank 32 formed to surround the opening of the intermediate tank 31. The inner tank 30 alternately stores the chemical liquid and the pure water alternately, and the wafer W is immersed in the chemical liquid or the pure water to perform the chemical liquid treatment or the washing treatment.

Inside the inner tank 30, there are respectively provided a treatment liquid discharge nozzle 35 for discharging the chemical liquid or pure water in the inner tank 30, and a concentration sensor 57 for measuring the concentration of the chemical liquid. The processing liquid supply line 56 attached to the processing liquid discharge nozzle 35 is branched into a pure water supply line 52 and a chemical liquid supply line 55. In the treatment liquid discharge nozzle 35, pure water is supplied from the pure water supply source 90 through the pure water supply line 52 and the treatment liquid supply line 56 which are provided with the on-off valve 53. Further, the processing liquid discharge nozzle 35 is supplied with the chemical liquid from the chemical liquid supply source 91 through the chemical liquid supply line 55 and the processing liquid supply line 56 which are provided in the opening and closing valve 54.

A drain pipe 36 interposed between the opening and closing valve 37 is connected to the bottom of the inner tank 30. Then, by opening the opening and closing valve 37, the chemical liquid or the pure water stored in the inner tank 30 can be discharged into the casing 13. Further, a drain pipe 18 through which the opening and closing valve 19 is interposed is provided in the lower portion of the casing 13, and the liquid medicine or pure water can be discharged from the casing 13. Further, the casing 13 is provided with an exhaust pipe 29 for discharging the ambient gas in the casing 13, and the vapor of the chemical liquid or the like can be exhausted by the exhaust pipe 29.

The intermediate groove 31 is connected to a chemical liquid or pure water overflowing from the upper opening of the inner groove 30. A drain pipe 41 for discharging the chemical liquid or pure water from the intermediate tank 31 is provided in the intermediate tank 31, and a trap 42 is connected to the drain pipe 41. The liquid medicine or pure water discharged through the liquid discharge pipe 41 is stored in the collector 42 at a certain height. Next, a drain pipe 43 is additionally connected to the collector 42, and the chemical liquid or pure water stored in the collector 42 can be discharged into the casing 13 through the drain pipe 43.

Pure water is often stored in the outer tank 32. Further, as shown in Fig. 1, an annular seal plate 46 is provided, and the lower portion of the seal plate 46 is immersed in pure water stored in the outer groove 32. Further, the upper end of the sealing plate 46 is in close contact with the lower plate of the door pocket 11 disposed above the outer groove 32. According to the configuration as described above, the outer groove 32 has a sealing function using pure water, and the environment inside the inner groove 30 does not leak to the outside.

The drying processing unit 3 is provided with a chamber 5 for accommodating the wafer W and a chamber wall 60 for forming the chamber 5 therein. The chamber wall 60 has a substantially cylindrical tubular portion 60a and a dome-shaped cover portion 60b that opens and closes the upper opening of the tubular portion 60a. The lower opening of the tubular portion 60a is in airtight communication with the opening formed in the upper plate of the door pocket 11.

The lid portion 60b of the chamber wall 60 is lifted and lowered by a lifting mechanism (not shown). As shown in Fig. 1, the lower end surface of the lid portion 60b abuts against the air seal ring 63 provided at the upper end of the barrel portion 60a. Thereby, the chamber 5 is sealed by the chamber wall 60. Further, in a state where the lid portion 60b is moved to the upper side of the position shown in FIG. 1 (that is, a state in which the chamber 5 is opened), it is possible to perform between the outside of the substrate processing apparatus 1 and the inside of the drying processing unit 3. The wafer W is moved in and out. More specifically, in a state in which the holding portion 26 of the wafer guide 4 protrudes upward from the tubular portion 60a, the wafer W is performed between the holding portion 26 and an external transfer device (not shown). Received.

An IPA vapor nozzle 71 for supplying IPA (isopropyl alcohol) vapor into the chamber 5 is disposed in the chamber 5. A pipe 21 is connected to the IPA steam nozzle 71, and the pipe 21 is connected to the IPA supply source 92. Next, the opening and closing valve 82 provided in the pipe 21 is opened, and the flow rate control valve 84 is operated, whereby the IPA of the predetermined flow rate is sent to the heater 22 by the IPA supply source 92. Next, the IPA is heated by the heater 22, whereby IPA vapor is generated. The IPA vapor that occurs as indicated above is injected into the chamber 5 by the IPA vapor nozzle 71.

The IPA vapor nozzle 71 has, for example, a cylindrical shape, and is preferably used in a structure having a vapor ejection opening formed at a constant interval in the longitudinal direction (the direction perpendicular to the paper surface in Fig. 1). The IPA vapor nozzle 71 is configured such that the IPA vapor ejected from the vapor ejection port does not directly hit the wafer W accommodated in the chamber 5 and is ejected obliquely upward. Then, the IPA vapor injected by the IPA vapor nozzle 71 rises toward the upper peripheral surface of the lid portion 60b of the chamber wall 60 through the upper left and upper right of the wafer W shown in Fig. 1, and thereafter, in the lid portion. The upper center of 60b merges and descends, and flows into the wafers W as shown in Fig. 2, and flows down the surface of the wafer W.

Further, an N ₂ gas nozzle 72 for injecting N ₂ gas (nitrogen gas) heated to a predetermined temperature into the chamber 5 is provided inside the chamber 5. As shown in Fig. 1, the N ₂ gas supply source 93 supplies the room temperature N ₂ gas to the heater 24 by operating the on-off valve 86. Next, the N ₂ gas is heated to a predetermined temperature by the heater 24, and the heated N ₂ gas is ejected into the chamber 5 by the N ₂ gas nozzle 72 through the N ₂ body supply line 25.

The N ₂ gas nozzle 72 is suitably used in the same configuration as the IPA vapor nozzle 71. Specifically, N ₂ gas line to the nozzle 72 by the gas injection port is injected N ₂ gas not directly hit is accommodated in the chamber 5 toward the wafer W upward obliquely arranged as to be sprayed good. The N ₂ gas system jetted by the N ₂ gas nozzle 72 rises toward the inner peripheral surface of the lid portion 60b through the upper left and upper right sides of the wafer W, merges at the upper center of the lid portion 60b, and descends, and flows into the second portion. The wafers W shown in the figure flow down each other along the surface of the wafer W.

Further, a cooling gas nozzle 74 for injecting cooling gas into the chamber 5 is provided in the chamber 5. As shown in FIG. 1, the cooling gas nozzle 74 is connected to the gas supply pipe 23. A cooling mechanism 85 is interposed in the gas supply pipe 23, and an N ₂ gas supply source 94 is provided at an upstream end of the gas supply pipe 23. Next, the N ₂ gas supply source 94 supplies the room temperature N ₂ gas to the cooling mechanism 85 by operating the on-off valve 83. In the cooling mechanism 85, the N ₂ gas system is cooled to a temperature lower than the temperature of the atmosphere outside the chamber wall 60 (specifically, for example, 15 to 20 ° C), and the cooled gas (cooling the N ₂ gas) ) is injected into the chamber 5 by the cooling gas nozzle 74.

The cooling gas nozzle 74 has, for example, a cylindrical shape, and is preferably used in a structure having a gas injection port formed at a constant interval in the longitudinal direction (the direction perpendicular to the paper surface in Fig. 1). Further, the cooling gas nozzle 74 is provided near the center of the upper portion of the lid portion 60b of the chamber wall 60, and the cooling gas nozzle 74 is disposed above the IPA vapor nozzle 71. Further, the gas injection port of the cooling gas nozzle 74 is directed downward in the vertical direction. Thereby, in the chamber 5, the cooling gas nozzle 74 supplies the cooled N ₂ gas to the lower side in the vertical direction.

Further, as shown in Fig. 2, a fluid mist nozzle 75 for supplying a mist of fluid into the chamber 5 is provided in the chamber 5. The fluid mist nozzle 75 is composed of, for example, a two-fluid nozzle. Here, the fluid mist supplied into the chamber 5 by the fluid mist nozzle 75 is formed as a mist of a fluid composed of pure water, IPA, HFE (hydrofluoroether), or a mixture thereof. Further, the temperature of the fluid mist supplied into the chamber 5 by the fluid mist nozzle 75 is substantially the same as or lower than the atmospheric temperature outside the chamber wall 60.

The fluid mist nozzles 75 are respectively connected to an N ₂ gas supply pipe 20a for supplying N ₂ gas to the fluid mist nozzles 75; and for supplying the fluid mist nozzles 75 with pure water or IPA, or HFE (hydrogen fluoride) A fluid supply tube 20b of a fluid composed of an ether or a mixture of the above. Further, the N ₂ gas supply pipe 20a upstream end portion is connected to N ₂ gas supply source 95, the N ₂ gas supply pipe 20a is provided via on-off valve 87. On the other hand, a fluid supply source 96 is connected to the upstream end of the fluid supply pipe 20b, and an opening and closing valve 88 is interposed in the fluid supply pipe 20b.

The configuration of the fluid mist nozzle 75 composed of the two-fluid nozzle will be described in more detail with reference to FIG. Here, the two-fluid nozzle is generally a nozzle that mixes a gas with a liquid to generate a mist of fine droplets and sprays the mist. In the present embodiment, the supply line 20b is supplied with pure water or other fluid through the fluid pipe IPA fluid mist nozzle 75, and the N ₂ gas supplied from the pipe 20a is supplied with N ₂ gas. The fluid mist nozzle 75 has, for example, a substantially cylindrical nozzle body 75a formed of a fluororesin, and an N ₂ gas flow path 75b communicating with the N ₂ gas supply pipe 20a is provided inside the nozzle body 75a; A fluid flow path 75c that communicates with the fluid supply pipe 20b. The N ₂ gas flow path 75b and the fluid flow path 75c are joined by three confluent merging portions 75d located inside the nozzle body 75a, and the internal flow is additionally formed by the merging portion 75d to the discharge port 75e of the fluid mist nozzle 75. road.

In the above shown fluid mist nozzle 75, based in the nozzle body 75a, the N ₂ gas supply pipe 20a is supplied to the N ₂ gas N ₂ gas flow passage 75b, and supplied from the fluid pipe 20b and is supplied to the fluid flow The fluid of the path 75c collides and mixes at the merging portion 75d, whereby a mist of the fluid is formed in the merging portion 75d, and the mist of the fluid is sprayed on the wafer W by the discharge port 75e.

Further, an exhaust nozzle 73 for discharging the ambient gas in the chamber 5 is provided inside the chamber 5, and the exhaust nozzle 73 is provided with a natural exhaust line for performing natural exhaust from the chamber 5. 49; and a forced exhaust line 48 for performing forced exhaust from the chamber 5. The exhaust nozzle 73 has a cylindrical shape, and is preferably used in a slit type suction port having a certain length for taking in a gas in the chamber 5 toward the longitudinal direction thereof (Fig. 1) A construct formed at regular intervals in a direction perpendicular to the plane of the paper.

A partial exhaust device 8 is mounted at the apex portion of the cover portion 60b of the chamber wall 60. The local exhaust device 8 has a column portion that is deformed and expanded when air or N ₂ gas is supplied, and is in close contact with the periphery of the wafer guide 4, whereby the pillar portion of the wafer guide 4 is attached. An air seal ring (not shown) that seals the gap between the cover portion 60b and the cover portion 60b.

The environment of the liquid processing tank 6 provided in the liquid processing unit 2 and the environment of the chamber 5 provided in the drying processing unit 3 are the shutters 10 that can be slidably disposed in the horizontal direction in the middle. Is isolated or connected. The shutter 10 is housed in the door casing 11 and the liquid processing tank 6 when the liquid processing is performed in the liquid processing tank 6, and when the wafer W is moved between the liquid processing tank 6 and the chamber 5. The environment is in communication with the environment of the chamber 5. On the other hand, in a state where the shutter 10 is disposed directly under the cylindrical portion 60a of the chamber wall 60, the seal ring 15 provided on the upper surface of the shutter 10 abuts against the lower end of the cylindrical portion 60a, The lower opening of the hermetic occlusion chamber 5 is open. Here, the exhaust pipe 16 is provided in the door casing 11 with the opening and closing valve 17, and the environment inside the door casing 11 can be exhausted.

Further, the substrate processing apparatus 1 is provided with a control unit 99 that performs control of each of the above-described constituent elements. The control unit 99 is connected to each component of the substrate processing apparatus 1 to control the operation of each component (specifically, for example, the elevation of the lid portion 60b of the chamber wall 60, the lifting and lowering of the wafer guide 4, and the blocking Sliding of the door 10, opening and closing of the respective opening and closing valves 82, 83, 86, 87, 88, etc.). The control content in the control unit 99 is a flowchart showing a flow of a series of operations of the substrate processing apparatus 1 in Fig. 4, and the details thereof are supplemented. In the present embodiment, the control unit 99 is connected to a keyboard for inputting a command or the like by the engineering manager to manage the substrate processing apparatus 1, or a display for visually displaying the operation state of the substrate processing apparatus 1. The data input/output unit 97. Further, the control unit 99 is connected to the memory medium 98, which stores a control program for realizing various processes executed by the substrate processing apparatus 1 by the control by the control unit 99, for use in accordance with processing conditions. A program (ie, a prescription) that performs processing for each component of the substrate processing apparatus 1. The memory medium 98 can be constituted by a memory such as a ROM or a RAM, a hard disk, a disk-shaped memory medium such as a CD-ROM or a DVD-ROM, and other well-known memory media.

Then, if necessary, the memory unit 98 calls an arbitrary prescription and causes the control unit 99 to execute the instruction from the data input/output unit 97, thereby performing the desired processing of the substrate processing apparatus 1 under the control of the control unit 99. deal with.

Next, a processing method of using the wafer W of the substrate processing apparatus 1 as described above will be described. Fig. 4 is a flow chart showing the operation of the chemical liquid processing, the cleaning processing, and the drying processing of the wafer W. Here, one of the series of chemical liquid processing, the washing processing, and the drying processing shown below is performed by the control unit 99 controlling each component of the substrate processing apparatus 1 in accordance with a program (prescription) stored in the memory medium 98.

The liquid processing tank 6 and the chamber 5 are initially separated by the shutter 10 (STEP 1a), and the inside of the chamber 5 is filled with N ₂ gas, and the internal pressure thereof is formed in the same state as the atmospheric pressure (STEP 1b). On the other hand, a predetermined chemical liquid is stored in the inner tank 30 of the liquid processing tank 6 (STEP 1c). In this state, the holding portion 26 of the wafer guide 4 is disposed in the drying processing portion 3.

Next, the cover portion 60b of the chamber wall 60 is raised, and the holding portion 26 of the wafer guide 4 is extended toward the upper side of the cylindrical portion 60a of the chamber wall 60 to supply the N ₂ gas toward the inside of the chamber 5. When the external substrate transfer device (not shown) stops, 50 wafers W are received in the holding portion 26 of the wafer guide 4 (STEP 2). Next, the wafer guide 4 is lowered to accommodate the wafer W in the chamber 5, and the lid portion 60b is lowered. At this time, a state in which the upper surface of the cylindrical portion 60a is slightly opened is formed. Thereafter, while the forced discharge is performed by the exhaust nozzle 73, the shutter 10 is slid so that the liquid processing tank 6 communicates with the chamber 5 (STEP 3).

As a result, even if the shutter 10 is opened, the downward flow from the fan filter unit (FFU) (not shown) flows into the chamber 5, forming clean air from the upper opening of the cylinder portion 60a toward the exhaust nozzle 73. The flow of the clean air prevents the liquid chemical environment stored in the inner tank 30 from rising toward the chamber 5.

Next, the wafer guide 4 is further lowered, and the held wafer W is immersed in the chemical liquid stored in the inner tank 30 for a predetermined time (STEP 4). When the processing of the wafer W by the chemical solution is completed, that is, the pure water is supplied directly into the inner tank 30 by the processing liquid discharge nozzle 35 while the wafer W is immersed in the inner tank 30. The chemical solution in the inner tank 30 is replaced with pure water to perform the cleaning process of the wafer W (STEP 5). At this time, the chemical solution overflowed by the inner tank 30 and the pure water are blocked by the intermediate tank 31, and are discharged by the drain pipe 41, the collector 42, and the drain pipe 43. Here, the inner tank 30 is replaced with pure water by the chemical liquid, and the chemical liquid can be discharged to the casing 13 through the liquid discharge pipe 36, and then the pure water is supplied to the inner tank 30.

Whether or not the chemical solution in the inner tank 30 has been replaced with pure water can be determined based on the measured value of the concentration sensor 57. When the measured value of the concentration sensor 57 is used, the chemical liquid in the inner tank 30 is replaced with pure water, and the chemical liquid is discharged from the inner tank 30, that is, the forced exhaust line 48 is switched to the natural exhaust line 49. The lid portion 60b is lowered to close the upper surface of the barrel portion 60a. The upper surface of the barrel portion 60a is occluded, that is, in the local exhaust device 8, the gap between the post portion 27 of the wafer guide 4 and the lid portion 60b is sealed by an air seal ring (not shown). . Thereby, the environmental gas in the chamber 5 can be prevented from leaking to the outside. Further, N ₂ gas from the nozzle 72 has been heated to a predetermined temperature N ₂ gas is supplied into the chamber 5, that has been held in the heated N ₂ gas atmosphere (STEP6) within the chamber 5. Thereby, the inside of the chamber 5 is warmed, and the chamber wall 60 is warmed, and then when IPA vapor is supplied into the chamber 5, condensation of IPA vapor at the chamber wall 60 can be suppressed.

Next, after the supply of the heated N ₂ gas is performed in the chamber 5, the fluid mist is supplied into the chamber 5 by the fluid mist nozzle 75 (STEP 7a). At this time, the temperature of the fluid mist supplied into the chamber 5 is substantially the same as or lower than the atmospheric temperature outside the chamber wall 60. Further, the fluid mist is intermittently supplied into the chamber 5. That is, the fluid mist is supplied into the chamber 5 by a method in which the supply of the fluid mist in the chamber 5 and its stop are alternately repeated. Further, the control unit 99 controls the opening and closing valve 83 such that the supply amount of the fluid mist in the chamber 5 by the fluid mist nozzle 75 does not exceed a predetermined amount set in advance. Here, the predetermined amount set in advance is memorized in the memory medium 98.

As described above, the inside of the chamber 5 is humidified by supplying the fluid mist into the chamber 5. Further, while the fluid mist is supplied into the chamber 5, the cooling gas is supplied into the chamber 5 by the cooling gas nozzle 74 (STEP 7b). As described above, the fluid mist is supplied into the chamber 5 by the fluid mist nozzle 75, and the cooling gas is supplied into the chamber 5 by the cooling gas nozzle 74, so that the gas in the chamber 5 is cooled. The temperature of the gas within the chamber 5 is lower than the temperature of the chamber wall 60.

Thereafter, in order to accommodate the wafer W in the chamber 5, the pull-up of the wafer guide 4 is started (STEP 8). In this STEP 8, in order to pull up the wafer W in the chamber 5 after the humidification, the moisture adhering to the wafer W does not naturally dry, so there is no crystal at this stage. The case where the circle W forms a watermark.

When the wafer W is accommodated in the chamber 5, the pull-up of the wafer guide 4 is stopped, and the shutter 10 is closed to isolate the liquid processing tank 6 from the chamber 5 (STEP 9). Next, when the wafer W is held at a predetermined position in the chamber 5, the supply of the IPA vapor in the chamber 5 is started (STEP 10).

With this STEP 10, pure water that has adhered to the surface of the wafer W is replaced with IPA. At this time, since the change in the surface tension of the surface liquid of the wafer W is moderated, the thickness of the liquid film does not become uneven, and the balance of the surface tension applied to the convex portion of the circuit pattern provided on the wafer W is hard to be broken. Therefore, the occurrence of pattern damage can be prevented. Further, as described above, drying is performed substantially simultaneously in the plane of the wafer W, whereby the formation of the watermark can be suppressed.

When the liquid film of IPA is formed on the surface of the wafer W by supplying the IPA vapor for a predetermined time, the supply of the IPA vapor into the chamber 5 is stopped (STEP 11), and then the drying process of the wafer W is performed. The drying treatment can volatilize and evaporate the IPA from the surface of the wafer W by, for example, supplying N ₂ gas heated to a predetermined temperature in the chamber 5 (STEP 12), and then supplying the room temperature N ₂ gas to the chamber. 5 is performed in the order of cooling the wafer W to a predetermined temperature (STEP 13).

In the STEPs 12 and 13 shown above, by uniformly volatilizing the IPA on the surface of the wafer W, the balance of the surface tension applied to the convex portion of the circuit pattern provided on the wafer W is hard to be broken. Suppress the occurrence of pattern damage. Further, since drying is performed in a state where only IPA exists on the surface of the wafer W, formation of a watermark can be suppressed.

After the drying of the wafer W is completed, the sealing by the air sealing ring of the local exhaust device 8 is released, and the cover portion 60b of the chamber wall 60 is raised upward, thereby substantially simultaneously making the wafer guide 4 ascending, the wafer W is projected toward the upper side of the cylindrical portion 60a of the chamber wall 60 (STEP 14). At this time, the supply of the N ₂ gas from the N ₂ gas nozzle 72 is stopped, and the clean gas from the fan filter unit (FFU) is introduced into the chamber 5 by the forced exhaust line 48. Next, the substrate transfer device (not shown) is externally accessed by the substrate guide 4, and the wafer W is carried out by the substrate processing apparatus 1 (STEP 15). As described above, the processing of one of the substrates W in the substrate processing apparatus 1 is completed.

As described above, in the substrate processing apparatus 1 and the substrate processing method of the present embodiment, the liquid processing unit 2 immerses the wafer W in the pure water stored in the inner tank 30, and in the drying processing unit 3 The chamber wall 60 that internally forms the chamber 5 is heated, and after the chamber wall 60 is heated, a fluid mist is supplied into the chamber 5, and thereafter, the wafer W is moved from the inner tank 30 into the chamber 5. Next, after the wafer W is moved from the inner tank 30 into the chamber 5, IPA vapor is supplied into the chamber 5 to dry the wafer W.

As described above, after the chamber wall 60 is heated in the drying treatment portion 3, the fluid mist is supplied into the chamber 5, whereby the gas in the chamber 5 is cooled by the fluid mist, whereby the chamber can be opened at one time. The wall 60 is maintained at a high temperature, and the gas in the chamber 5 is formed at a temperature lower than the temperature of the chamber wall 60 in a short time.

Therefore, it is possible to prevent the temperature of the wafer W moved into the chamber 5 from rising while preventing the IPA vapor from being cooled by the chamber wall 60, thereby preventing the amount of IPA condensed or adsorbed on the surface of the wafer W. reduce. Thereby, the drying performance of the wafer W in the drying treatment portion 3 can be improved.

Further, a fluid mist is supplied into the chamber 5 before the wafer W is moved into the chamber 5 of the drying processing portion 3, whereby the inside of the chamber 5 can be humidified in advance. Therefore, when the wafer W is moved into the chamber 5, the inside of the chamber 5 is humidified, so that it is possible to prevent the moisture adhering to the wafer W from drying naturally before the IPA is condensed or adsorbed on the surface of the wafer W. Thereby, it is possible to suppress the formation of a watermark on the surface of the wafer W after the wafer W is moved into the chamber 5.

However, in the present embodiment, the temperature of the fluid mist supplied into the chamber 5 is substantially the same as or lower than the atmospheric temperature outside the chamber wall 60. Therefore, when the chamber wall 60 is heated in the drying treatment unit 3, when the fluid mist is supplied into the chamber 5, the gas in the chamber 5 can be reliably formed while maintaining the chamber wall 60 at a high temperature. The temperature is lower than the temperature of the chamber wall 60.

Wherein, if the temperature of the gas in the chamber 5 is lower than the temperature of the chamber wall 60, the temperature of the fluid mist supplied into the chamber 5 is not limited to be substantially the same as or equal to the temperature of the atmosphere outside the chamber wall 60. The atmospheric temperature is low. That is, even if the temperature of the fluid mist supplied into the chamber 5 is higher than the temperature of the atmosphere outside the chamber wall 60, and is lower than the temperature of the chamber wall 60 after being heated, even if The fluid mist shown is supplied into the chamber 5 without any problem.

Further, in the present embodiment, the fluid mist supplied into the chamber 5 is formed as a fluid mist composed of pure water, IPA, HFE or a mixture thereof. However, if humidification in the chamber 5 can be performed and the gas in the chamber 5 can be cooled, the fluid mist supplied into the chamber 5 is not limited to the above.

Further, the fluid mist nozzle 75 is constituted by a two-fluid nozzle. When the fluid mist is generated by using the two-fluid nozzle as described above, the diameter of the fluid mist can be reduced, and the fluid mist is easily vaporized, so that the gas cooling in the chamber 5 can be further promoted. However, the fluid mist nozzle 75 is not limited to a two-fluid nozzle, and may be replaced with, for example, a collision type mist generator. Even in the case of using the collision type mist generator as shown above, the diameter of the fluid mist generated can be reduced.

Further, after the chamber wall 60 is heated, before the wafer W is moved from the inner tank 30 into the chamber 5, a gas belonging to a temperature lower than the temperature of the atmosphere outside the chamber wall 60 is supplied in the chamber 5. Cool the N ₂ gas. Thereby, the gas in the chamber 5 can be replaced by the cooling of the N ₂ gas, so that the chamber wall 60 can be further maintained at a high temperature while the gas in the chamber 5 is formed to be lower than the atmospheric temperature. temperature. However, it need not be cooled as shown in the N ₂ gas is supplied into the chamber 5, the cooling may be omitted supplying N ₂ gas to the inner chamber 5.

Further, when a fluid mist is supplied into the chamber 5, a fluid mist is intermittently supplied in the chamber 5. Here, when the fluid mist is continuously supplied to the chamber 5, the fluid mist may condense in the chamber wall 60. However, in the present embodiment, the fluid mist is intermittently supplied in the chamber 5, so that the fluid mist is intermittently supplied. The fluid mist condensation as shown above can be prevented.

Further, when the fluid mist is supplied in the chamber 5, the fluid mist is supplied into the chamber 5 in such a manner that the supply amount of the fluid mist in the chamber 5 does not exceed a predetermined amount set in advance. Here, when the supply amount of the fluid mist in the chamber 5 is excessive, the supply amount of the fluid mist exceeds the amount of saturated water vapor in the chamber 5, and the fluid mist may dew condensation with the excess portion. However, in the present embodiment, since the supply amount of the fluid mist in the chamber 5 is not exceeded by a predetermined amount (for example, the amount of saturated water vapor in the chamber 5), the fluid as described above can be prevented. The fog is condensation.

However, the substrate processing apparatus 1 and the substrate processing method of the present invention are not limited to the above-described aspects, and various modifications can be added. For example, the wafer W may be moved from the inside groove 30 to the inside of the chamber 5, and the IPA vapor is supplied from the IPA vapor nozzle 71 in the chamber 5 instead of moving the wafer W from the inside groove 30 to Within the chamber 5, IPA vapor is then supplied by the IPA vapor nozzle 71 in the chamber 5.

Further, as shown in Fig. 5, a heater 61 for heating the chamber wall 60 may be provided in the chamber wall 60 of the drying processing unit 3. This heater 61 is controlled by the control unit 99.

In the substrate processing apparatus 1 shown in FIG. 5, when the wafer W and the chamber wall 60 are warmed before moving the wafer W into the chamber 5 of the drying processing unit 3, The heater 61 directly heats the chamber wall 60 instead of supplying N ₂ gas heated to a predetermined temperature by the N ₂ gas nozzle 72 into the chamber 5. Thereby, the temperature of the chamber wall 60 becomes higher, and the gas in the chamber 5 is heated by the chamber wall 60.

Instead of supplying the N ₂ gas heated to a predetermined temperature by the N ₂ gas nozzle 72 into the chamber 5, the chamber 5 of the drying treatment portion 3 can also be used by the method of using the heater 61 shown in FIG. The inner and chamber walls 60 are warmed to relieve the volume of liquid within the chamber 5.

Further, in another configuration of the substrate processing apparatus 1, as shown in FIG. 6, the liquid processing tank 6 may be provided inside the chamber wall 60 of the drying processing unit 3. At this time, the position of the wafer guide 4 in the liquid processing tank 6 and the position of the chamber 5 above the liquid processing tank 6 reciprocate. Next, when the wafer guide 4 is moved into the liquid processing tank 6, the wafer W held by the wafer guide 4 is immersed in the liquid processing tank 6 or the pure water, and the other On the other hand, when the wafer guide 4 is moved upward by the liquid processing tank 6, the wafer W held by the wafer guide 4 is housed in the chamber 5.

1. . . Substrate processing device

2. . . Liquid handling department

3. . . Drying treatment department

4. . . Wafer guide

5. . . Chamber

6. . . Liquid treatment tank

7. . . Lifting mechanism

8. . . Local exhaust

10. . . Block door

11. . . Door box

13. . . Box

15. . . Sealing ring

16. . . exhaust pipe

17. . . Open and close valve

18. . . Drain tube

19. . . Open and close valve

20a. . . N ₂ gas supply pipe

20b. . . Fluid supply tube

twenty one. . . Piping

twenty two. . . Heater

twenty three. . . Gas supply pipe

twenty four. . . Heater

25. . . N ₂ gas supply line

26. . . Holding department

27. . . Pillar

29. . . exhaust pipe

30. . . Inner groove

31. . . Intermediate slot

32. . . Outer groove

35. . . Treatment liquid discharge nozzle

36. . . Drain tube

37. . . Open and close valve

41. . . Drain tube

42. . . collector

43. . . Drain tube

46. . . sealing plate

48. . . Forced exhaust line

49. . . Natural exhaust line

52. . . Pure water supply line

53. . . Open and close valve

54. . . Open and close valve

55. . . Liquid supply line

56. . . Treatment liquid supply line

57. . . Concentration sensor

60. . . Chamber wall

60a. . . Tube part

60b. . . Cover part

61. . . Heater

63. . . Air seal ring

71. . . IPA steam nozzle

72. . . N ₂ gas nozzle

73. . . Exhaust nozzle

74. . . Cooling gas nozzle

75. . . Fluid mist nozzle

75a. . . Nozzle body

75b. . . N ₂ gas flow path

75c. . . Fluid flow path

75d. . . Confluence

75e. . . Discharge

83. . . Open and close valve

84. . . Flow control valve

85. . . Cooling mechanism

86. . . Open and close valve

87. . . Open and close valve

88. . . Open and close valve

90. . . Pure water supply

91. . . Liquid supply

92. . . IPA supply source

93. . . N ₂ gas supply source

94. . . N ₂ gas supply source

95. . . N ₂ gas supply source

96. . . Fluid supply

97. . . Data input and output

98. . . Memory media

99. . . Control department

W. . . Substrate

Fig. 1 is a schematic view showing a schematic structure of a substrate processing apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic view of the substrate processing apparatus shown in Fig. 1 viewed from the side.

Fig. 3 is an explanatory view showing a schematic structure of a fluid mist nozzle of the substrate processing apparatus shown in Fig. 2.

Fig. 4 is a flow chart showing the operation of the chemical liquid processing, the cleaning processing, and the drying processing of the substrate by the substrate processing apparatus shown in Fig. 1.

Fig. 5 is a schematic view showing a schematic configuration of another substrate processing apparatus of the present invention.

Fig. 6 is a schematic view showing a schematic configuration of another substrate processing apparatus of the present invention.

1. . . Substrate processing device

2. . . Liquid handling department

3. . . Drying treatment department

4. . . Wafer guide

5. . . Chamber

6. . . Liquid treatment tank

10. . . Block door

11. . . Door box

20a. . . N ₂ gas supply pipe

20b. . . Fluid supply tube

26. . . Holding department

27. . . Pillar

30. . . Inner groove

36. . . Drain tube

37. . . Open and close valve

60. . . Chamber wall

60a. . . Tube part

60b. . . Cover part

63. . . Air seal ring

75. . . Fluid mist nozzle

87. . . Open and close valve

88. . . Open and close valve

95. . . N ₂ gas supply source

96. . . Fluid supply

W. . . Substrate

Claims (21)

A substrate processing apparatus comprising: a cleaning tank for storing a cleaning liquid for a substrate; and a drying unit configured to be a drying unit disposed in the vicinity of the cleaning tank, having a chamber wall in which a chamber is formed inside a chamber wall heating portion for heating the chamber wall, a fluid mist supply portion for supplying a fluid mist in the chamber, and a drying gas supply portion for supplying a dry gas in the chamber; and a holding portion for holding the substrate The substrate moves between the cleaning chamber and the chamber of the drying unit, and the control unit controls the chamber wall heating unit, the fluid mist supply unit, the dry gas supply unit, and the holding unit. The control unit first immerses the substrate in the cleaning liquid stored in the cleaning tank, and then heats the chamber wall by the chamber wall heating unit in the drying unit, and then the fluid mist supply unit The fluid mist is supplied into the chamber, and then the substrate is moved from the inside of the cleaning tank to the chamber of the drying unit by the holding portion, during which the substrate is moved After the chamber of the drying unit, the chamber gas heating unit, the fluid mist supply unit, the dry gas supply unit, and the holding unit are configured to supply dry gas to the chamber by the drying gas supply unit. control. The substrate processing apparatus according to claim 1, wherein the temperature of the fluid mist supplied to the chamber by the fluid mist supply unit is substantially the same as or higher than an atmospheric temperature of the outside of the chamber wall. The atmospheric temperature is low. The substrate processing apparatus according to claim 1, wherein the fluid mist supplied to the chamber by the fluid mist supply unit is made of pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof. The fluid mist formed. The substrate processing apparatus according to any one of claims 1 to 3, wherein the fluid mist supply unit has a two-fluid nozzle, and a fluid mist is generated by the two-fluid nozzle. The substrate processing apparatus according to any one of claims 1 to 3, wherein the fluid mist supply unit has a collision type mist generator, and the collision mist generator generates a fluid mist. The substrate processing apparatus according to any one of claims 1 to 3, wherein the drying unit further has a cooling gas supply of a gas belonging to a temperature lower than an atmospheric temperature outside the chamber wall. In the cooling gas supply unit in the chamber, the control unit moves the chamber wall by the chamber wall heating unit in the drying unit, and moves the substrate from the inside of the cleaning tank to the aforementioned by the holding unit Before the chamber of the drying unit, the cooling gas supply unit is controlled such that the cooling gas is supplied into the chamber by the cooling gas supply unit. The substrate processing apparatus according to any one of claims 1 to 3, wherein the fluid mist supply unit intermittently supplies a fluid mist in the chamber. The substrate processing apparatus according to any one of claims 1 to 3, wherein the control unit is configured by the fluid mist supply unit The control of the fluid mist supply unit is performed such that the supply amount of the fluid mist supplied into the chamber does not exceed a predetermined amount set in advance. The substrate processing apparatus according to the first aspect of the invention, wherein the chamber wall heating unit supplies a gas having a temperature higher than an atmospheric temperature outside the chamber wall to a heating gas supply unit in the chamber. The substrate processing apparatus according to claim 1, wherein the chamber wall heating portion is a heater provided in the chamber wall. The substrate processing apparatus according to claim 1, wherein the drying gas system supplied to the chamber by the drying gas supply unit is made of vapor of an organic solvent. A substrate processing method comprising: a cleaning tank for storing a cleaning liquid of a substrate; and a substrate processing method in a substrate processing apparatus of a drying unit disposed in the vicinity of the cleaning tank, wherein the substrate processing method is provided a process of immersing in a cleaning liquid stored in the cleaning tank; in the drying unit, heating a chamber wall in which a chamber is formed inside; after heating the chamber wall, in the drying unit a process of supplying a fluid mist in the chamber; a process of moving the substrate from the inside of the cleaning tank to the chamber after supplying the fluid mist in the chamber; and moving the substrate from the cleaning tank to the drying unit The process of supplying the dry gas in the chamber after the chamber is moved from the inside of the cleaning tank to the chamber of the drying unit. The substrate processing method of claim 12, wherein The temperature of the fluid mist supplied into the chamber is substantially the same as or lower than the temperature of the atmosphere outside the chamber wall. The substrate processing method according to claim 12, wherein the fluid mist supplied into the chamber is a fluid mist composed of pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof. The substrate processing method according to any one of claims 12 to 14, further comprising: a chamber for moving the substrate from the cleaning tank to the drying unit after heating the chamber wall Before the indoors, a cooling gas belonging to a gas having a temperature lower than the atmospheric temperature outside the chamber wall is supplied to the chamber. The substrate processing method according to any one of claims 12 to 14, wherein the fluid mist is intermittently supplied into the chamber in a process of supplying a fluid mist into the chamber. The substrate processing method according to any one of the items 12 to 14, wherein, in the process of supplying the fluid mist into the chamber, the supply amount of the fluid mist in the chamber does not exceed a predetermined amount. The predetermined amount set. The substrate processing method according to claim 12, wherein, when the chamber wall is heated, a gas having a temperature higher than an atmospheric temperature outside the chamber wall is supplied into the chamber, and is supplied Gas into the chamber heats the chamber wall. The substrate processing method of claim 12, wherein the chamber wall is heated by a heater provided on the chamber wall when the chamber wall is heated. A program that can be executed by a control computer including a cleaning tank having a cleaning liquid for storing a substrate and a substrate processing device disposed in a drying unit in the vicinity of the cleaning tank, characterized in that: In the execution of the program, the control computer controls the substrate processing apparatus to perform the substrate processing method, and the substrate processing method includes a process of immersing the substrate in the cleaning liquid stored in the cleaning tank; In the unit, a process of heating the chamber wall in which the chamber is formed; after heating the chamber wall, supplying a fluid mist in the chamber of the drying unit; after supplying the fluid mist in the chamber, a process of moving the substrate into the chamber by the inside of the cleaning tank; and moving the substrate from the inside of the cleaning chamber to the chamber of the drying unit, or moving the substrate from the cleaning chamber to the drying unit After the chamber, the drying gas is supplied to the chamber. A memory medium that memorizes a program that can be executed by a control computer including a cleaning tank having a cleaning liquid for storing a substrate, and a substrate processing device of a drying unit disposed in the vicinity of the cleaning tank. In the substrate processing method, the substrate processing method is configured to immerse the substrate in a cleaning liquid stored in the cleaning tank, by performing the program, and the control computer controls the substrate processing apparatus to perform the substrate processing method. Engineering; in the aforementioned drying unit, the chamber wall in which the chamber is formed inside is performed a heating process; a process of supplying a fluid mist in a chamber of the drying unit after heating the chamber wall; and a process of moving the substrate from the cleaning tank to the chamber after supplying the fluid mist in the chamber And a process of supplying a dry gas in the chamber while moving the substrate from the inside of the cleaning tank to the chamber of the drying unit or moving the substrate from the inside of the cleaning tank to the chamber of the drying unit. .