KR20090122882A - Substrate processing device, substrate processing method and storage medium - Google Patents

Abstract

PURPOSE: A substrate treating apparatus, a substrate treating method, and a storage medium are provided to maintain a gas inside a chamber into a temperature lower than a temperature of a chamber wall at a short time by supplying mist of a fluid state to an inner part of the chamber after heating the chamber wall in a drying unit. CONSTITUTION: A solution treating tub(6) stirs a cleaning solution of a substrate. A chamber wall(60) is formed inside a chamber(5). A heating part for the chamber wall heats the chamber wall. A fluid mist supply part supplies a mist of a fluid state to an inner part of the chamber. A drying gas supply part supplies a drying gas to an inner part of the chamber. A maintaining part(26) moves the substrate in between an inner part of the solution treating tub and an inner part of the chamber of the drying unit.

Description

Substrate processing apparatus, substrate processing method and storage medium {SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM}

The present invention provides a substrate processing apparatus and a substrate processing method, for example, in which a substrate such as a semiconductor wafer or a glass substrate for LCD is immersed in a cleaning liquid such as a chemical liquid or a rinse liquid, and then the substrate subjected to the cleaning is dried with a drying unit. And a storage medium, and more particularly, to a substrate processing apparatus, a substrate processing method, and a storage medium capable of improving the drying performance of a substrate in a drying unit.

In general, in a manufacturing process in a semiconductor manufacturing apparatus, a substrate (hereinafter referred to as a wafer) such as a semiconductor wafer or an LCD glass is sequentially immersed in a cleaning tank in which a cleaning liquid such as a chemical liquid or a rinse liquid is stored to perform cleaning. The washing treatment method is widely adopted. In addition, a dry gas made of vapor of an organic solvent having a volatility such as IPA (isopropyl alcohol) is brought into contact with the surface of the wafer or the like after washing, and the vapor of the dry gas is condensed or adsorbed onto the surface of the wafer or the like. BACKGROUND OF THE INVENTION A drying treatment method is known in which water is removed from a surface such as a wafer and dried by supplying an inert gas such as N ₂ gas (nitrogen gas) to a surface such as a wafer.

In the substrate processing apparatus which performs both this kind of cleaning processing method and a drying processing method, the cleaning tank which stores cleaning liquids, such as a chemical | medical solution and a rinse liquid, is provided, and the wafer immersed in the cleaning liquid of this cleaning tank above this cleaning tank is provided. A drying unit for drying is provided. The drying unit has a chamber wall that forms a chamber (drying chamber) therein, and the wafer immersed in the cleaning liquid in the cleaning tank is moved into the chamber of the drying unit, and drying gas is supplied into the chamber to dry the wafer. (For example, refer patent document 1, patent document 2, etc.).

In the conventional substrate processing apparatus shown in patent document 1, patent document 2, etc., a wafer etc. are first immersed in the cleaning liquid stored in the washing tank, and this wafer etc. are wash | cleaned. At this time, a high temperature N ₂ gas at a temperature higher than the temperature of the atmosphere outside the chamber wall is supplied into the chamber in advance, the inside of the chamber is filled with the hot gas, and the chamber wall is heated. Here, in order to heat the chamber wall, instead of supplying a high temperature N ₂ gas at a temperature higher than the atmospheric temperature outside the chamber wall into the chamber, a heater is provided in the chamber wall, and the chamber wall is heated by the heater. You may also do it. Even in this case, when the chamber wall is heated by the heater, the gas in the chamber is heated to become a high temperature gas by the heated chamber wall.

Thereafter, the wafer is pulled out of the cleaning liquid in the cleaning tank, moved into the chamber of the drying unit, and the chamber is closed by a shutter or the like. Then, a drying gas is supplied into the chamber, and the dry gas is brought into contact with a surface such as a wafer to condense or adsorb the vapor of the dry gas onto the surface of the wafer. Thereafter, an inert gas is supplied to a surface such as a wafer to remove and dry moisture on the surface of the wafer or the like.

[Patent Document 1] Japanese Unexamined Patent Application Publication No. 10-154688

[Patent Document 2] Japanese Patent Application Laid-Open No. 2007-5479

As described above, in the substrate processing apparatus, before the wafer is lifted from the cleaning liquid in the cleaning tank and moved into the chamber of the drying unit, a high temperature N ₂ gas having a temperature higher than the temperature of the atmosphere outside the chamber wall is previously supplied into the chamber. The chamber walls are filled with hot gas and the chamber walls are heated. The reason why the chamber wall is preheated before moving the wafer into the chamber is that, if the chamber wall temperature is low, the dry gas is cooled by the chamber wall and condensed when the dry gas is supplied into the chamber. This is because the amount of dry gas that is condensed or adsorbed on the surface of the substrate is reduced, and the drying performance on the wafer is inferior.

However, when the chamber wall is heated, the gas in the chamber also becomes a hot gas, so that the temperature of the wafer also rises when the wafer is pulled out of the cleaning liquid in the cleaning tank and moved into the chamber of the drying unit. When the temperature of the wafer rises, the amount of dry gas that is condensed or adsorbed on the surface of the wafer decreases, which may lower the drying performance of the wafer.

As described above, the inventor of the present application cools the dry gas by the chamber wall when the gas in the chamber is lower than the atmospheric temperature while maintaining the chamber wall at a high temperature when drying the wafer in the drying unit. It has been found that condensation can be prevented, and that the temperature of the wafer moved into the chamber can be suppressed from rising, thereby reducing the amount of dry gas condensed or adsorbed on the surface of the wafer. .

In addition, when the inside of the chamber is in a dry state due to the supply of a high temperature N ₂ gas into the chamber or the like before the wafer is lifted out of the cleaning liquid in the cleaning tank and moved into the chamber of the drying unit, the wafer is removed from the chamber of the drying unit. The moisture adhering to this wafer will naturally dry when it moves inside, and a water mark may form on the surface of the wafer.

The present invention has been made in view of this point, and prevents the amount of dry gas condensed or adsorbed on the surface of the substrate in the chamber of the drying unit from being reduced and water on the surface of the substrate when the substrate is moved into the chamber. It is an object of the present invention to provide a substrate processing apparatus, a substrate processing method, a program and a storage medium that can suppress the formation of marks and thereby improve the drying performance of the substrate in the drying unit.

The substrate processing apparatus of this invention is a liquid processing tank which stores the cleaning liquid of a board | substrate, and a drying unit arrange | positioned in the vicinity of the said liquid processing tank, The chamber wall which forms a chamber inside, The chamber wall heating part for heating the said chamber wall And a drying unit having a fluid mist supply unit supplying a mist of fluid in the chamber and a dry gas supply unit supplying a dry gas into the chamber, and holding the substrate so that the substrate is in the liquid processing tank and the chamber of the drying unit. As a control part for moving between the holding part and the said chamber wall heating part, the said fluid mist supply part, the said dry gas supply part, and the said holding part, a board | substrate is first immersed in the washing | cleaning liquid stored in the said liquid processing tank, and then the said drying is carried out. The chamber wall is heated by the chamber wall heating unit in the unit, and then the fluid mist is supplied by the fluid mist supply unit. Is supplied into the chamber, and then the holding portion moves the substrate from the liquid treatment tank into the chamber of the drying unit, during or during the substrate of the drying unit, And a control unit for controlling the chamber wall heating unit, the fluid mist supply unit, the dry gas supply unit, and the holding unit to supply a dry gas into the chamber by a dry gas supply unit.

Moreover, the substrate processing method of this invention is a substrate processing method in the substrate processing apparatus containing the liquid processing tank which stores the cleaning liquid of a board | substrate, and the drying unit arrange | positioned in the vicinity of the said liquid processing tank, Comprising: A step of immersing a substrate, a step of heating a chamber wall forming a chamber therein in the drying unit, a step of supplying a mist of fluid into the chamber of the drying unit after the chamber wall is heated; After supplying a mist of fluid into the chamber, the substrate is moved from the liquid processing tank to the chamber, and the substrate is moved from the liquid processing tank to the chamber of the drying unit, or the substrate is moved. After moving from the liquid treatment tank to the chamber of the drying unit, supplying a dry gas into the chamber. The.

According to the substrate processing apparatus and substrate processing method of the present invention, first, the chamber wall is heated in a drying unit, and then the gas in the mist chamber of the fluid is cooled by supplying a mist of the fluid into the chamber, and then the substrate Is moved from the liquid treatment tank to the chamber of the drying unit. Then, the substrate is dried by supplying a drying gas into the chamber.

In this manner, after the chamber wall is heated in the drying unit, the gas in the chamber is kept in the chamber for a short time while the chamber wall is kept at a high temperature by cooling the gas in the mist chamber of the fluid by supplying a mist of the fluid into the chamber. It can be made lower than temperature.

Therefore, while preventing the dry gas from being cooled by the chamber wall and condensing, the temperature of the substrate to be moved into the chamber is suppressed from rising, and the amount of dry gas condensed or adsorbed on the surface of the substrate is reduced. You can prevent throwing away. Thereby, the drying performance with respect to the board | substrate in a drying unit can be improved.

It is also possible to pre-humidify the interior of the chamber by supplying a mist of fluid into the chamber before the substrate is moved into the chamber of the drying unit. For this reason, since the inside of a chamber is humidified when a board | substrate is moved into a chamber, it can suppress that the moisture adhered to a board | substrate naturally dries before a dry gas condenses or adsorb | sucks on the surface of a board | substrate. As a result, it is possible to suppress the formation of a watermark on the surface of the substrate immediately after the substrate is moved into the chamber.

In the substrate processing apparatus of the present invention, it is preferable that the temperature of the mist of the fluid supplied into the chamber by the fluid mist supply part is approximately equal to or lower than the temperature of the atmosphere outside of the chamber wall. Do.

In the substrate processing apparatus of this invention, it is preferable that the mist of the fluid supplied into the said chamber by the said fluid mist supply part is the mist of the fluid which consists of pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof.

In the substrate processing apparatus of this invention, it is preferable that the said fluid mist supply part has a two-fluid nozzle, and the mist of a fluid is produced | generated by this two-fluid nozzle. Alternatively, the fluid mist supply part may have a collision type mist generator, and the collision mist generator may be configured to generate fluid mist.

In the substrate processing apparatus of the present invention, the drying unit further has a cooling gas supply unit for supplying a cooling gas, which is a gas having a temperature lower than the temperature of the atmosphere outside of the chamber wall, into the chamber, wherein the control unit is configured in the drying unit. After the chamber wall is heated by the chamber wall heating portion, before the substrate is moved from the liquid processing tank to the chamber of the drying unit by the holding portion, a cooling gas is supplied by the cooling gas supply portion to the chamber. It is preferable to control the cooling gas supply part to supply the inside.

In the substrate processing apparatus of the present invention, it is preferable that the fluid mist supply part intermittently supply the mist of the fluid into the chamber.

In the substrate processing apparatus of this invention, it is preferable that the said control part controls the said fluid mist supply part so that the supply amount of the mist of the fluid in the chamber by the said fluid mist supply part may not exceed predetermined amount.

In the substrate processing apparatus of this invention, it is preferable that the said chamber wall heating part is a heating gas supply part which supplies the gas of temperature higher than the temperature of the atmosphere outside of the said chamber wall in the said chamber. Alternatively, the chamber wall heating unit may be a heater provided in the chamber wall.

In the substrate processing apparatus of this invention, it is preferable that the dry gas supplied into the said chamber by the said dry gas supply part consists of vapor of the organic solvent.

In the substrate processing method of the present invention, it is preferable that the temperature of the mist of the fluid supplied into the chamber is approximately equal to or lower than the temperature of the atmosphere outside of the chamber wall.

In the substrate processing method of the present invention, the mist of the fluid supplied into the chamber is preferably a mist of the fluid consisting of pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof.

In the substrate processing method of the present invention, after heating the chamber wall, before moving the substrate from the liquid processing tank to the chamber of the drying unit, the temperature lower than the temperature of the atmosphere outside the chamber wall. It is preferable to further include a step of supplying a cooling gas which is a gas into the chamber.

In the substrate processing method of the present invention, in the step of supplying the mist of the fluid into the chamber, it is preferable to intermittently supply the mist of the fluid into the chamber.

In the substrate processing method of the present invention, in the step of supplying the mist of the fluid into the chamber, the supply amount of the mist of the fluid into the chamber is preferably not more than a predetermined amount.

In the substrate processing method of the present invention, when the chamber wall is heated, a gas having a temperature higher than the atmospheric temperature outside of the chamber wall is supplied into the chamber, and the chamber wall is supplied by the gas supplied into the chamber. It is preferable to heat. Or when heating the said chamber wall, it is preferable to heat the said chamber wall by the heater provided in this chamber wall.

The storage medium of the present invention is a storage medium in which a program that can be executed by a control computer of a substrate processing apparatus including a liquid processing tank for storing a cleaning liquid of a substrate and a drying unit disposed in the vicinity of the liquid processing tank is stored. Wherein the control computer controls the substrate processing apparatus to execute the substrate processing method, wherein the substrate processing method includes the steps of immersing the substrate in the cleaning liquid stored in the liquid processing tank, and in the drying unit, Heating the chamber wall forming the chamber therein; heating the chamber wall; supplying a mist of fluid into the chamber of the drying unit; and supplying a mist of fluid into the chamber; Moving the substrate from the liquid processing tank to the chamber; and moving a substrate from the liquid processing tank to the drying unit. During the moving member to the inside, or after moving to the chamber of the drying unit the substrate from the inside of the liquid treatment tank, characterized in that, including a step of supplying a drying gas into the chamber.

According to the substrate processing apparatus, the substrate processing method, and the storage medium of the present invention, the drying performance of the substrate in the drying unit can be improved.

EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described with reference to drawings. 1-4 is a figure which shows the substrate processing apparatus which concerns on this embodiment. 1 is a schematic diagram which shows schematic structure of the substrate processing apparatus which concerns on one Embodiment of this invention, and FIG. 2 is a schematic diagram which looked at the substrate processing apparatus shown in FIG. 1 from the side. 3 is explanatory drawing which shows schematic structure of the fluid mist nozzle of the substrate processing apparatus shown in FIG. 4 is a flowchart showing the operation of the chemical liquid treatment, the cleaning treatment and the drying treatment of the substrate by the substrate processing apparatus shown in FIG. 1.

In the present embodiment, for example, a plurality of semiconductor wafers (hereinafter also referred to simply as "wafers") in which a circuit pattern predetermined by photolithography is formed are collectively processed with a predetermined chemical liquid, and thereafter pure water (DIW). ), And an example of an apparatus such as performing a drying process and further performing a drying process will be described.

1 and 2 are diagrams showing a schematic structure of the substrate processing apparatus 1. The substrate processing apparatus 1 is provided above the liquid processing part 2 and the liquid processing part 2 which perform the chemical liquid process and the cleaning process of the wafer W, and the cleaning process by this liquid processing part 2 is complete | finished. The drying processing part 3 which dries one wafer W is included. Herein, the liquid processing unit 2 is formed by a predetermined chemical liquid (eg, diluted aqueous hydrofluoric acid solution (DHF), ammonia-hydrogen peroxide (APF), sulfuric acid-hydrogen peroxide (SPM), etc.) with respect to the wafer W. The treatment is performed, and thereafter, the washing treatment is performed by pure water (DIW). Moreover, the wafer which can hold | maintain the some wafer W in the substrate processing apparatus 1, and is movable (lifting) between the liquid processing part 2 and the drying process part 3 by the lifting mechanism 7. The guide 4 is provided. A fan filter unit (FFU, not shown) is provided above the substrate processing apparatus 1, and clean air is supplied to the substrate processing apparatus 1 as a downflow by the fan filter unit.

As shown in FIG. 2, the wafer guide 4 includes a holding part 26 and a holding part which can hold up to 50 wafers W side by side at regular intervals in a horizontal direction, for example, in a substantially vertical posture. It has the support part 27 which supports 26. This strut part 27 penetrates the cover part 60b of the chamber wall 60 which forms the chamber 5 inside.

The liquid processing part 2 has the box 13 and the liquid processing tank 6 accommodated in this box 13. The liquid processing tank 6 includes an inner tank 30, an intermediate tank 31 formed to surround the opening of the upper portion of the inner tank 30, and an outer tank formed to surround the opening of the intermediate tank 31 ( 32). The inner tank 30 stores chemical liquids and pure water alternately appropriately, and immerses the wafer W in the chemical liquid or the pure water to perform chemical liquid treatment and cleaning treatment, respectively.

The inside of the inner tank 30 is provided with the process liquid discharge nozzle 35 for discharging a chemical liquid or pure water in the inner tank 30, and the density sensor 57 for measuring the density | concentration of a chemical liquid, respectively. The processing liquid supply line 56 attached to the processing liquid discharge nozzle 35 is branched into the pure water supply line 52 and the chemical liquid supply line 55. Pure water is supplied to the processing liquid discharge nozzle 35 from the pure water supply source 90 through the pure water supply line 52 and the processing liquid supply line 56 via the opening / closing valve 53. In addition, the chemical liquid is supplied to the processing liquid discharge nozzle 35 from the chemical liquid supply source 91 via the chemical liquid supply line 55 and the processing liquid supply line 56 via the opening / closing valve 54.

The drainage pipe 36 in which the opening / closing valve 37 was interposed is connected to the bottom part of the inner tank 30. By opening this open / close valve 37, the chemical liquid and the pure water stored in the inner tank 30 can be discharged into the box 13. In addition, a drain pipe 18 having an opening / closing valve 19 interposed therebetween is provided at the bottom of the box 13, and the chemical liquid and the pure water can be discharged from the box 13. In addition, the box 13 is provided with an exhaust pipe 29 for exhausting the atmosphere gas in the box 13, and the vapor of the chemical liquid can be exhausted by the exhaust pipe 29.

The intermediate bath 31 receives the chemical liquid and the pure water which overflowed from the upper surface opening of the inner tank 30. The intermediate tank 31 is provided with a drainage tube 41 for discharging the chemical liquid or pure water from the intermediate tank 31, and a trap 42 is connected to the drainage tube 41. In the trap 42, the chemical liquid and the pure water discharged through the drainage pipe 41 are stored at a constant height. Further, a drain pipe 43 is further connected to the trap 42, and the chemical liquid and pure water stored in the trap 42 can be discharged into the box 13 by the drain pipe 43.

Pure water is always stored in the outer tank 32. Moreover, as shown in FIG. 1, the annular sealing board 46 is provided, and the lower part of this sealing board 46 is immersed in the pure water stored in the outer tank 32. As shown in FIG. In addition, the upper end of the seal plate 46 is in close contact with the lower plate of the shutter box 11 disposed above the outer tank 32. By this structure, the outer tank 32 has a sealing function using pure water, and the atmosphere in the inner tank 30 does not leak to the outside.

The drying processing unit 3 is provided with a chamber 5 for accommodating the wafer W and a chamber wall 60 for forming the chamber 5 therein. The chamber wall 60 has the substantially cylindrical cylinder part 60a and the dome-shaped lid part 60b which opens and closes the upper surface opening of the cylinder part 60a. The lower opening of the cylinder portion 60a is hermetically communicated with the opening formed in the upper plate of the shutter box 11.

The lid portion 60b of the chamber wall 60 is capable of lifting up and down by a lifting mechanism (not shown). As shown in FIG. 1, the lower end surface of the lid portion 60b is placed on the upper end of the cylinder portion 60a. By contacting the provided air seal ring 63, the chamber 5 is sealed by the chamber wall 60. Moreover, in the state which moved the cover part 60b to the upper side of the position shown in FIG. 1 (that is, the state which opened the chamber 5), the exterior of the substrate processing apparatus 1 and the inside of the drying process part 3 It is possible to carry in and out of the wafer W in between. More specifically, in the state where the holding part 26 of the wafer guide 4 is placed above the cylindrical part 60a, the wafer W is held between the holding part 26 and an external conveying apparatus (not shown). It is supposed to carry out delivery.

In the chamber 5, the IPA steam nozzle 71 for supplying the vapor of IPA (isopropyl alcohol) in the chamber 5 is arrange | positioned. A pipe 21 is connected to the IPA steam nozzle 71, and the pipe 21 is connected to the IPA supply source 92. And the opening / closing valve 82 provided in the piping 21 is opened, and the IPA of a predetermined flow volume is sent from the IPA supply source 92 to the heater 22 by operating the flow control valve 84. The IPA vapor is generated by heating the IPA with the heater 22. The IPA vapor generated in this way is injected into the chamber 5 from the IPA steam nozzle 71.

As the IPA steam nozzle 71, for example, a cylindrical shape is used, and a steam injection port is preferably used having a structure formed at regular intervals in its longitudinal direction (direction perpendicular to the ground in Fig. 1). IPA steam nozzle 71 is arrange | positioned so that IPA steam injected from a steam injection port may be injected obliquely upward without directly contacting the wafer W accommodated in chamber 5. The IPA vapor injected from the IPA vapor nozzle 71 rises toward the upper part of the inner circumferential surface of the cover portion 60b of the chamber wall 60 through the upper left and right sides of the wafer W shown in FIG. 1. Then, it joins and descends in the upper center of the cover part 60b, flows in between the wafers W as shown in FIG. 2, and flows down along the surface of the wafer W. As shown in FIG.

In addition, inside the chamber 5, an N ₂ gas nozzle 72 for injecting N ₂ gas (nitrogen gas) heated to a predetermined temperature into the chamber 5 is provided. From as shown in Figure 1, N ₂ gas supply source 93 is adapted to be supplied to the heater 24 by the N ₂ gas at room temperature for operating the on-off valve (86). And, in the N ₂ is Suga advance becomes heated to a predetermined temperature, the heated N ₂ gas from a N ₂ gas nozzle 72 through the N ₂ gas supply line 25, the chamber 5 by the heater 24 It is possible to spray.

As the N ₂ gas nozzle 72, one having the same structure as the IPA steam nozzle 71 is suitably used. Specifically, the N ₂ gas nozzle 72 is preferably disposed such that the N ₂ gas injected from the gas injection port is injected obliquely upward without directly contacting the wafer W accommodated in the chamber 5. N N ₂ gas ejected from the _second gas nozzle 72, passes through the upper right above the left side of the wafer (W), and rising towards the upper inner peripheral surface of the cover portion (60b), joined at the top center of the cover portion (60b) It descends and flows in between the wafers W as shown in FIG. 2, and flows down along the surface of the wafer W. As shown in FIG.

In the chamber 5, a cooling gas nozzle 74 for injecting cooling gas into the chamber 5 is provided. As shown in FIG. 1, the cooling gas nozzle 74 is connected to the gas supply pipe 23. A cooling mechanism 85 is provided in the gas supply pipe 23, and an N ₂ gas supply source 94 is provided at an upstream end of the gas supply pipe 23. And, N ₂ from a gas source (94) is adapted to be supplied to the cooling mechanism 85 by operating the the N ₂ gas at room temperature on-off valve (83). In the cooling mechanism 85, the N ₂ gas is cooled to a temperature lower than the temperature of the atmosphere outside of the chamber wall 60 (specifically, 15 ° C. to 20 ° C.), and the cooled gas (cooling N ₂ gas). Is injected into the chamber 5 by the cooling gas nozzle 74.

As the cooling gas nozzle 74, for example, one having a cylindrical shape and having a structure in which the gas injection ports are formed at regular intervals in the longitudinal direction (the direction perpendicular to the ground in Fig. 1) is suitably used. The cooling gas nozzle 74 is provided near the upper center of the lid portion 60b of the chamber wall 60, and the cooling gas nozzle 74 is disposed above the IPA steam nozzle 71. In addition, the gas injection port of the cooling gas nozzle 74 is directed downward vertically. As a result, the cooling N ₂ gas is supplied from the cooling gas nozzle 74 in the chamber 5 downward in the vertical direction.

In addition, as shown in FIG. 2, in the chamber 5, a fluid mist nozzle 75 for supplying a mist of fluid into the chamber 5 is provided. This fluid mist nozzle 75 is comprised with two fluid nozzles, for example. Here, the mist of the fluid supplied from the fluid mist nozzle 75 into the chamber 5 consists of the mist of the fluid which consists of pure water, IPA, HFE (hydrofluoroether), or a mixture thereof. In addition, the temperature of the mist of the fluid supplied from the fluid mist nozzle 75 into the chamber 5 is about the same as or lower than the temperature of the atmosphere outside the chamber wall 60.

The fluid mist nozzle 75 includes an N ₂ gas supply pipe 20a for supplying N ₂ gas to the fluid mist nozzle 75, and pure water, IPA, or HFE (hydrofluoro) to the fluid mist nozzle 75. The fluid supply pipe 20b for supplying the fluid which consists of ether) or a mixture thereof is respectively connected. In addition, an N ₂ gas supply source 95 is connected to an upstream end of the N ₂ gas supply pipe 20a, and an opening / closing valve 87 is provided in the N ₂ gas supply pipe 20a. On the other hand, the fluid supply source 96 is connected to the upstream end part of the fluid supply pipe 20b, and the opening / closing valve 88 is provided in this fluid supply pipe 20b.

The structure of the fluid mist nozzle 75 which consists of two fluid nozzles is demonstrated more concretely with reference to FIG. Here, a two-fluid nozzle generally means the nozzle of the system which produces | generates a micro droplet mist by mixing gas and a liquid, and sprays this mist. In the present embodiment, the fluid mist nozzle 75, through the fluid supply line (20b) and the fluid is supplied, such as pure water or IPA, is such that N ₂ gas is supplied from an N ₂ gas feed pipe (20a). Fluid mist nozzle 75 may have a nozzle body (75a) of substantially cylindrical shape formed of e.g. a fluororesin, in the interior of the nozzle body (75a), N ₂ N ₂ gas, such as communicating with the gas supply pipe (20a) The fluid flow path 75c which communicates with the flow path 75b and the fluid supply pipe 20b is provided, respectively. These N ₂ gas flow paths 75b and the fluid flow paths 75c join at a tertiary type confluence portion 75d inside the nozzle body 75a, and the discharge port of the fluid mist nozzle 75 from the confluence portion 75d. The inner flow path is further formed up to 75e.

In such a fluid mist nozzle 75, the nozzle body (75a) in, N ₂ gas and N ₂ gas sent to the N ₂ gas flow path (75b) from the supply pipe (20a), the fluid flow path (75c) from the fluid line (20b) The fluid sent to collide with the confluence at the confluence 75d, thereby forming a mist of the fluid at the confluence 75d so that the mist of the fluid is sprayed from the discharge port 75e onto the wafer W. have.

In the chamber 5, an exhaust nozzle 73 for discharging the atmosphere gas in the chamber 5 is finished, and the exhaust nozzle 73 is subjected to natural exhaust from the chamber 5. A natural exhaust line 49 for carrying out and a forced exhaust line 48 for carrying out forced exhaust from the chamber 5 are provided. The exhaust nozzle 73 has a cylindrical shape and has a structure in which a slit-shaped intake port of a predetermined length for blowing gas in the chamber 5 is formed at regular intervals in the longitudinal direction thereof (the direction perpendicular to the ground in FIG. 1). Having is suitably used.

The local exhaust device 8 is attached to the apex of the lid portion 60b of the chamber wall 60. The local exhaust device 8 deforms and expands when air, N ₂ gas, or the like is supplied, and adheres to the periphery of the wafer guide 4 so that the local exhaust device 8 is between the support portion 27 and the lid portion 60b of the wafer guide 4. It has an air seal ring (not shown) which seals the clearance gap of.

The atmosphere of the liquid processing tank 6 provided in the liquid processing unit 2 and the atmosphere of the chamber 5 provided in the drying processing unit 3 are isolated by the shutter 10 that is slidably disposed in the horizontal direction in the middle thereof. Or it is possible to communicate. The shutter 10 is accommodated in the shutter box 11 when the liquid processing is performed in the liquid processing tank 6 and when the wafer W is moved between the liquid processing tank 6 and the chamber 5. The atmosphere of the liquid processing tank 6 and the atmosphere of the chamber 5 are in communication. On the other hand, in a state where the shutter 10 is disposed directly below the cylinder portion 60a of the chamber wall 60, the seal ring 15 provided on the upper surface of the shutter 10 contacts the lower end of the cylinder portion 60a. As a result, the opening of the lower surface of the chamber 5 is hermetically closed. Moreover, the exhaust pipe 16 is provided in the shutter box 11 through the opening / closing valve 17, and the atmosphere in the shutter box 11 can be exhausted.

Moreover, the control part 99 which controls each component mentioned above is provided in the substrate processing apparatus 1. This control part 99 is connected to each component of the substrate processing apparatus 1, and each operation | movement (specifically, elevating the cover part 60b of the chamber wall 60, wafer guide 4, for example) is carried out. ), The slide of the shutter 10, the opening / closing of each of the opening and closing valves 82, 83, 86, 87, 88 and the like. Although the control content by the control part 99 is as showing in the flowchart which shows the flow of a series of operation | movement of the substrate processing apparatus 1 in FIG. 4, the detail is mentioned later. In the present embodiment, the control unit 99 includes a keyboard for the process manager to perform command input operations and the like for managing the substrate processing apparatus 1, a display for visualizing and displaying the operation status of the substrate processing apparatus 1, and the like. The data input / output part 97 which consists of these is connected. In addition, the control unit 99 includes a control program for realizing various processes executed in the substrate processing apparatus 1 by control by the control unit 99, and each component of the substrate processing apparatus 1 according to processing conditions. A storage medium 98 in which a program (i.e., a recipe) for executing a process is stored is connected. The storage medium 98 may be composed of a memory such as a ROM or a RAM, a disk-type storage medium such as a hard disk, a CD-ROM, a DVD-ROM, or other known storage medium.

Then, if necessary, an arbitrary recipe is called from the storage medium 98 by the instruction from the data input / output unit 97 and executed by the control unit 99, thereby controlling the substrate processing apparatus ( The desired process in 1) is performed.

Next, the processing method of the wafer W using the substrate processing apparatus 1 as mentioned above is demonstrated. 4 is a flowchart showing operations of a chemical liquid treatment, a cleaning treatment, and a drying treatment of the wafer W. FIG. In addition, the series of chemical liquid processing, washing processing, and drying processing as shown below, according to the program (recipe) stored in the storage medium 98, the control unit 99, each component of the substrate processing apparatus 1 By controlling it.

Initially, the liquid treatment tank 6 and the chamber 5 are isolated by the shutter 10 (step 1a), and the inside of the chamber 5 is filled with N ₂ gas, and its internal pressure is equal to atmospheric pressure. State (step 1b). On the other hand, the predetermined chemical liquid is stored in the inner tank 30 of the liquid processing tank 6 (step 1c). In this state, the holding part 26 of the wafer guide 4 is arrange | positioned at the drying process part 3.

Then, the lid portion 60b of the chamber wall 60 is raised, and the holding portion 26 of the wafer guide 4 is placed above the cylinder portion 60a of the chamber wall 60 to form the chamber 5. The supply of N ₂ gas into the inside is stopped, and 50 wafers W are transferred from the external substrate transfer device (not shown) to the holding part 26 of the wafer guide 4 (step 2). Subsequently, the wafer guide 4 is lowered to accommodate the wafer W in the chamber 5, and the lid portion 60b is lowered. At this time, the upper surface of the cylinder part 60a is made to open slightly. Thereafter, while the forced exhaust is performed from the exhaust nozzle 73, the shutter 10 is slid so that the liquid processing tank 6 and the chamber 5 communicate with each other (step 3).

In this way, even when the shutter 10 is opened, the downflow from the fan filter unit FFU (not shown) flows into the chamber 5 and is directed toward the exhaust nozzle 73 from the upper opening of the cylinder portion 60a. Since the flow of clean air is formed, it is possible to prevent the atmosphere of the chemical liquid stored in the inner tank 30 from rising toward the chamber 5.

Subsequently, the wafer guide 4 is further lowered, and the held wafer W is immersed in the chemical liquid stored in the inner tank 30 for a predetermined time (step 4). When the processing of the wafer W by this chemical liquid is completed, pure water is supplied into the inner tank 30 from the processing liquid discharge nozzle 35 while the wafer W is immersed in the inner tank 30, and the inner tank The chemical liquid in 30 is replaced with pure water, and the wafer W is cleaned (step 5). At this time, the chemical liquid and the pure water which overflowed from the inner tank 30 are received by the intermediate tank 31, and are drained through the drain pipe 41, the trap 42, and the drain pipe 43. The chemical liquid in the inner tank 30 may be replaced with the pure water by discharging the chemical liquid into the box 13 through the drainage pipe 36, and then supplying pure water to the inner tank 30.

Whether or not the chemical liquid in the inner tank 30 is replaced with pure water can be determined by the measured value of the concentration sensor 57. When the chemical liquid in the inner tank 30 is replaced with pure water by the measured value of the concentration sensor 57, and the chemical liquid is discharged from the inner tank 30, it is switched from the forced exhaust line 48 to the natural exhaust line 49. Then, the lid portion 60b is lowered to close the upper surface of the barrel portion 60a. When the upper surface of the cylinder portion 60a is closed, the gap between the support portion 27 of the wafer guide 4 and the lid portion 60b is sealed by an air seal ring (not shown) in the local exhaust device 8. do. Thereby, it is possible to prevent the atmospheric gas in the chamber 5 from leaking to the outside. Further, by supplying the N ₂ gas heated to a predetermined temperature N ₂ gas from the nozzle 72 into the chamber 5, to keep the chamber 5 to the heated N ₂ gas atmosphere (step 6). As a result, the inside of the chamber 5 is warmed and the chamber wall 60 is warmed, whereby condensation of the IPA vapor in the chamber wall 60 can be suppressed when the IPA vapor is supplied into the chamber 5 thereafter.

After supplying the heated N ₂ gas into the chamber 5, the mist of the fluid is supplied into the chamber 5 by the fluid mist nozzle 75 (step 7a). At this time, the temperature of the mist of the fluid supplied into the chamber 5 is substantially equal to or lower than the temperature of the atmosphere outside the chamber wall 60. In addition, the mist of the fluid is intermittently supplied into the chamber 5. In other words, the mist of the fluid is supplied into the chamber 5 in such a manner that the supply and the stop of the mist of the fluid in the chamber 5 are alternately repeated. Moreover, the control part 99 controls the opening / closing valve 83 so that the supply amount of the mist of the fluid in the chamber 5 by the fluid mist nozzle 75 may not exceed predetermined amount. Here, the preset amount is stored in the storage medium 98.

In this way, the inside of the chamber 5 is humidified by supplying a mist of fluid into the chamber 5. Further, at the same time as supplying the mist of the fluid into the chamber 5, the cooling gas is supplied into the chamber 5 by the cooling gas nozzle 74 (step 7b). As such, the mist of the fluid is supplied into the chamber 5 by the fluid mist nozzle 75 and the cooling gas is supplied into the chamber 5 by the cooling gas nozzle 74, so that the gas in the chamber 5 is cooled. Thus, the temperature of the gas in the chamber 5 is lower than the temperature of the chamber wall 60.

Thereafter, the pulling of the wafer guide 4 is started to accommodate the wafer W in the chamber 5 (step 8). In this step 8, since the wafer W is pulled up in the humidified chamber 5, the moisture adhered to the wafer W does not naturally dry, so that a watermark is formed on the wafer W in this step. Nothing happens.

When the wafer W rises to the position accommodated in the chamber 5, the pulling of the wafer guide 4 is stopped, and the shutter 10 is closed to isolate the liquid treatment tank 6 and the chamber 5 (step). 9). Then, when the wafer W is held at a predetermined position in the chamber 5, the supply of IPA vapor into the chamber 5 is started (step 10).

By this step 10, pure water adhering to the surface of the wafer W is replaced with IPA. At this time, since the change in the surface tension of the liquid on the surface of the wafer W is gentle, the thickness of the liquid film does not occur, and the balance of the surface tension due to the convex portion of the circuit pattern provided on the wafer W also collapses. Since it is difficult, occurrence of pattern collapse can be prevented. In addition, by drying substantially simultaneously in the surface of the wafer W in this way, formation of a watermark can be suppressed.

When a liquid film of IPA is formed on the surface of the wafer W by supplying the IPA vapor at a predetermined time, the supply of the IPA vapor into the chamber 5 is stopped (step 11), and the drying process of the wafer W is continued. Do it. This drying process, for example, supplies N ₂ gas heated to a predetermined temperature into the chamber 5 to volatilize and evaporate IPA from the surface of the wafer W (step 12), and then to remove N ₂ gas at room temperature. The wafer 5 can be supplied into the chamber 5 to cool the wafer W to a predetermined temperature (step 13).

In addition, in these steps 12 and 13, by uniformly volatilizing the IPA of the surface of the wafer W, the balance of the surface tension along the convex portions of the circuit patterns provided on the wafer W is difficult to collapse, and hence It can suppress occurrence. In addition, since drying is performed in the state where only IPA exists on the surface of the wafer W, formation of a watermark can also be suppressed.

When the drying of the wafer W is completed, the seal by the air sealing ring of the local exhaust device 8 is released, and the lid portion 60b of the chamber wall 60 is raised upward, and at the same time, the wafer guide is performed. (4) is raised and the wafer W is placed above the cylinder portion 60a of the chamber wall 60 (step 14). At this time, the supply of the N ₂ gas from the N ₂ gas nozzle 72 is stopped, and the clean air from the fan filter unit FFU is introduced into the chamber 5 through the forced exhaust line 48. Subsequently, the substrate conveyance apparatus which is not shown from the outside accesses the wafer guide 4, and carries out the wafer W from the substrate processing apparatus 1 (step 15). In this way, the process of the series of wafers W in the substrate processing apparatus 1 is completed.

As described above, according to the substrate processing apparatus 1 and the substrate processing method of the present embodiment, the wafer W is immersed in the pure water stored in the inner tank 30 in the liquid processing unit 2, and further, the drying processing unit 3. ), The chamber wall 60, which forms the chamber 5 therein, is heated, the chamber wall 60 is heated, the mist of the fluid is supplied into the chamber 5, and then the wafer W is It moves from the inner tank 30 to the inside of the chamber 5. After the wafer W is moved from the inner tank 30 to the inside of the chamber 5, IPA vapor is supplied into the chamber 5 to dry the wafer W.

In this manner, after the chamber wall 60 is heated in the drying processing unit 3, the chamber wall 60 is cooled by cooling the gas in the mist chamber 5 of the fluid by supplying a mist of the fluid into the chamber 5. The gas in the chamber 5 can be made lower than the temperature of the chamber wall 60 in a short time, keeping the temperature at high temperature.

For this reason, while preventing the IPA vapor from being cooled and condensed by the chamber wall 60, the temperature of the wafer W moved into the chamber 5 is suppressed from rising and the surface of the wafer W is increased. It can prevent that the quantity of IPA which condenses or adsorb | sucks to is reduced. Thereby, the drying performance with respect to the wafer W in the drying process part 3 can be improved.

In addition, the inside of the chamber 5 can be humidified in advance by supplying a mist of fluid into the chamber 5 before the wafer W is moved into the chamber 5 of the drying processing unit 3. For this reason, when the wafer W is moved into the chamber 5, since the inside of the chamber 5 is humidified, moisture adhered to the wafer W before the IPA condenses or adsorbs on the surface of the wafer W is absorbed. Natural drying can be suppressed. As a result, it is possible to suppress formation of a watermark on the surface of the wafer W immediately after the wafer W is moved into the chamber 5.

In addition, in this embodiment, the temperature of the mist of the fluid supplied in the chamber 5 is about the same as the temperature of the atmosphere which is outside of the chamber wall 60, or is lower than this temperature of the atmosphere. For this reason, after the chamber wall 60 is heated by the drying processing part 3, when the mist of fluid is supplied into the chamber 5, the gas in the chamber 5 is maintained, maintaining the chamber wall 60 at high temperature. The temperature can be reliably lower than the temperature of the chamber wall 60.

In addition, if the temperature of the gas in the chamber 5 becomes lower than the temperature of the chamber wall 60, the temperature of the mist of the fluid supplied into the chamber 5 will be equal to the temperature of the atmosphere outside the chamber wall 60. It is not limited to what is substantially the same or lower than this atmospheric temperature. That is, even if the temperature of the mist of the fluid supplied into the chamber 5 is higher than the temperature of the atmosphere outside of the chamber wall 60, when the temperature of the mist of the fluid is lower than the temperature of the heated chamber wall 60, such a mist of the fluid is chambered. There is no problem even if it supplies in (5).

In addition, in this embodiment, the mist of the fluid supplied into the chamber 5 consists of the mist of the fluid which consists of pure water, IPA, HFE, or a mixture thereof. However, as long as the humidification in the chamber 5 can be performed and the gas in the chamber 5 can be cooled, the mist of the fluid supplied into the chamber 5 is not limited to this.

In addition, the fluid mist nozzle 75 is comprised by a two-fluid nozzle. When the mist of the fluid is generated using such a two-fluid nozzle, the diameter of the mist of the fluid can be reduced, and since the mist of the fluid is easy to vaporize, the cooling of the gas in the chamber 5 can be further promoted. Can be. However, the fluid mist nozzle 75 is not limited to the two-fluid nozzle, and instead, for example, a collision mist generator may be used. Even when such a collision type mist generator is used, the diameter of the mist of the generated fluid can be made small.

In addition, after the chamber wall 60 is heated, before the wafer W is moved from the inner tank 30 to the inside of the chamber 5, the temperature lower than the atmospheric temperature outside the chamber wall 60 is obtained. The cooling N ₂ gas, which is a gas, is supplied into the chamber 5. As a result, the gas in the chamber 5 can be replaced with the cooling N ₂ gas. Therefore, the gas in the chamber 5 is lower than the atmospheric temperature while maintaining the chamber wall 60 at a high temperature. You can do it with temperature. However, for supplying the cooling N ₂ gas into the chamber 5 is not required and may be omitted to supply the cooling gas of N ₂ into the chamber (5).

In addition, when the mist of the fluid is supplied into the chamber 5, the mist of the fluid is intermittently supplied into the chamber 5. Here, when the mist of fluid is continuously supplied into the chamber 5, there exists a possibility that the mist of fluid may condensate in the chamber wall 60, However, in this embodiment, the mist of the fluid is intermittently in the chamber 5 here. Since the condensation is supplied to the condensate, condensation of the mist of the fluid can be prevented.

In addition, when supplying the mist of a fluid in the chamber 5, the mist of the fluid is supplied in the chamber 5 so that the supply amount of the mist of the fluid in the chamber 5 may not exceed predetermined amount. Here, when the supply amount of the mist of the fluid in the chamber 5 becomes excess, the supply amount of the mist of this fluid will exceed the amount of saturated water vapor in the chamber 5, and the mist of the fluid will condense by this excess amount. There is concern. However, in this embodiment, since the supply amount of the mist of the fluid in the chamber 5 does not exceed a preset amount (for example, the amount of saturated water vapor in the chamber 5), condensation of such a mist of the fluid is prevented. can do.

In addition, the substrate processing apparatus 1 and substrate processing method which concern on this invention are not limited to the said form, A various change can be added. For example, instead of moving the wafer W from the inner tank 30 into the chamber 5, and then supplying the IPA vapor from the IPA vapor nozzle 71 into the chamber 5, the wafer W is moved inside. The IPA steam may be supplied from the IPA steam nozzle 71 into the chamber 5 while moving from the tank 30 to the chamber 5.

In addition, as shown in FIG. 5, a heater 61 for heating the chamber wall 60 may be provided in the chamber wall 60 of the drying processing unit 3. This heater 61 is controlled by the control part 99.

In the substrate processing apparatus 1 as shown in FIG. 5, when the wafer 5 is heated in the chamber 5 and the chamber wall 60 before moving the wafer W into the chamber 5 of the drying processing unit 3. Instead of supplying the N ₂ gas heated to a predetermined temperature from the N ₂ gas nozzle 72 into the chamber 5, the chamber wall 60 is directly heated by the heater 61. As a result, the temperature of the chamber wall 60 is increased, and the gas in the chamber 5 is heated by the chamber wall 60.

Instead of supplying the N ₂ gas heated at a predetermined temperature from the N ₂ gas nozzle 72 into the chamber 5, a method of using the heater 61 as shown in FIG. 5 is also used. The chamber 5 and the chamber wall 60 can be warmed, thereby eliminating liquid pooling in the chamber 5.

Moreover, as another structure of the substrate processing apparatus 1, the liquid processing tank 6 may be provided in the inside of the chamber wall 60 of the drying process part 3 as shown in FIG. Also in this case, the wafer guide 4 performs reciprocating movement between the position in the liquid processing tank 6 and the position of the chamber 5 above this liquid processing tank 6. And when the wafer guide 4 is moved in the liquid processing tank 6, the wafer W hold | maintained in this wafer guide 4 is immersed in the chemical liquid or pure water in the liquid processing tank 6, On the other hand, when the wafer guide 4 is moved upward from the liquid processing tank 6, the wafer W held by the wafer guide 4 is accommodated in the chamber 5.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic diagram which shows schematic structure of the substrate processing apparatus which concerns on one Embodiment of this invention.

It is a schematic diagram which looked at the substrate processing apparatus shown in FIG. 1 from the side.

3 is an explanatory diagram showing a schematic structure of a fluid mist nozzle of the substrate processing apparatus shown in FIG. 2;

4 is a flowchart showing operations of a chemical liquid treatment, a washing treatment, and a drying treatment of the substrate by the substrate processing apparatus shown in FIG. 1.

5 is a schematic diagram showing a schematic structure of another substrate processing apparatus according to the present invention.

6 is a schematic diagram showing a schematic structure of still another substrate processing apparatus according to the present invention.

<Explanation of symbols for the main parts of the drawings>

1: substrate processing apparatus 2: liquid processing unit

3: dry processing part 4: wafer guide

5: chamber 6: liquid treatment tank

7: lifting mechanism 8: local exhaust system

10: shutter 11: shutter box

13: Box 15: seal ring

16: exhaust pipe 17: on-off valve

18: drain pipe 19: on-off valve

20a: N ₂ gas supply line 20b: fluid supply line

21: piping 22: heater

23: gas supply line 24: heater

25: N ₂ gas supply line 26: holding part

27: holding part 29: exhaust pipe

30: inner tank 31: intermediate tank

32: outer tank 35: treatment liquid discharge nozzle

36: drain pipe 37: on-off valve

41: drain tube 42: trap

43: drain tube 46: seal plate

48: forced exhaust line 49: natural exhaust line

52: pure water supply line 53: on-off valve

54: open / close valve 55: chemical liquid supply line

56: processing liquid supply line 57: concentration sensor

60: chamber wall 60a: barrel portion

60b: cover 61: heater

63: air seal ring 71: IPA steam nozzle

72: N ₂ gas nozzle 73: exhaust nozzle

74: cooling gas nozzle 75: fluid mist nozzle

75a: nozzle body 75b: N ₂ gas flow path

75c: fluid flow path 75d: confluence

75e: discharge port 83: on-off valve

84: flow control valve 85: cooling mechanism

86: on-off valve 87: on-off valve

88: on-off valve 90: pure water source

91: chemical supply source 92: IPA supply source

93: N ₂ gas source 94: N ₂ gas source

95: N ₂ gas source 96: fluid source

97: data input / output unit 98: storage medium

99: control unit

Claims (20)

A liquid treatment tank for storing the cleaning liquid of the substrate, A drying unit disposed in the vicinity of the liquid processing tank, comprising: a chamber wall for forming a chamber therein, a chamber wall heating unit for heating the chamber wall, a fluid mist supply unit for supplying a mist of fluid in the chamber, and a drying unit in the chamber A drying unit having a dry gas supply unit for supplying a gas, A holding part for holding the substrate to move the substrate between the liquid treatment tank and the chamber of the drying unit; A control unit for controlling the chamber wall heating unit, the fluid mist supply unit, the dry gas supply unit, and the holding unit, first immersing a substrate in a cleaning liquid stored in the liquid processing tank, and then, in the drying unit, in the chamber wall heating unit. By heating the chamber wall, and then supplying the mist of fluid into the chamber by the fluid mist supply part, and then moving the substrate from the liquid treatment tank into the chamber of the drying unit by the holding part, In the meantime, or after moving the substrate into the chamber of the drying unit, the chamber wall heating portion, the fluid mist supply portion, the dry gas supply portion, and the holding to supply dry gas into the chamber by the dry gas supply portion. Control unit Substrate processing apparatus comprising a. The substrate according to claim 1, wherein the temperature of the mist of the fluid supplied into the chamber by the fluid mist supply unit is equal to or lower than the temperature of the atmosphere outside the chamber wall. Processing unit. The fluid mist of the fluid supplied to the said chamber by the said fluid mist supply part is a mist of the fluid which consists of pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof. Substrate processing apparatus. The substrate processing apparatus according to claim 1 or 2, wherein the fluid mist supply unit has a two-fluid nozzle, and the mist of the fluid is generated by the two-fluid nozzle. The substrate processing apparatus according to claim 1 or 2, wherein the fluid mist supply portion has a collision mist generator, and the mist of fluid is generated by the collision mist generator. The said drying unit further has a cooling gas supply part which supplies the cooling gas which is gas of temperature lower than the temperature of the atmosphere which is outside of the said chamber wall in the said chamber, The control unit, after the chamber wall is heated by the chamber wall heating unit in the drying unit, before the substrate is moved from the liquid processing tank to the chamber of the drying unit by the holding unit, the cooling gas. And controlling the cooling gas supply unit to supply a cooling gas into the chamber by a supply unit. The substrate processing apparatus of claim 1, wherein the fluid mist supply unit intermittently supplies the mist of the fluid into the chamber. The substrate processing apparatus according to claim 1 or 2, wherein the control unit controls the fluid mist supply unit such that the supply amount of the mist of the fluid into the chamber by the fluid mist supply unit does not exceed a preset amount. . The substrate processing apparatus according to claim 1 or 2, wherein the chamber wall heating unit is a heating gas supply unit that supplies a gas having a temperature higher than the temperature of the atmosphere outside the chamber wall into the chamber. The substrate processing apparatus of claim 1, wherein the chamber wall heating unit is a heater provided in the chamber wall. The substrate processing apparatus according to claim 1 or 2, wherein the dry gas supplied into the chamber by the dry gas supply unit is made of vapor of an organic solvent. A substrate processing method in a substrate processing apparatus including a liquid processing tank for storing a cleaning liquid of a substrate and a drying unit disposed in the vicinity of the liquid processing tank, Immersing the substrate in the cleaning liquid stored in the liquid treatment tank; Heating, in the drying unit, a chamber wall forming a chamber therein; After heating the chamber wall, supplying a mist of fluid into the chamber of the drying unit; Supplying a mist of fluid into the chamber, and then moving the substrate from the liquid processing tank to the chamber; Supplying a dry gas into the chamber while moving the substrate from within the liquid processing tank into the chamber of the drying unit or after moving the substrate from within the liquid processing tank to the chamber of the drying unit Substrate processing method comprising a. The substrate processing method according to claim 12, wherein the temperature of the mist of the fluid supplied into the chamber is equal to or lower than the temperature of the atmosphere outside of the chamber wall. The substrate processing method according to claim 12 or 13, wherein the mist of the fluid supplied into the chamber is a mist of a fluid consisting of pure water, isopropyl alcohol, hydrofluoroether, or a mixture thereof. The method according to claim 12 or 13, wherein after the chamber wall is heated, before the substrate is moved from the liquid processing tank to the chamber of the drying unit, the temperature is lower than the temperature of the atmosphere outside the chamber wall. And supplying a cooling gas, which is a gas of temperature, into the chamber. The substrate processing method according to claim 12 or 13, wherein in the step of supplying the mist of the fluid into the chamber, the mist of the fluid is intermittently supplied into the chamber. The substrate processing method according to claim 12 or 13, wherein in the step of supplying the mist of the fluid into the chamber, the supply amount of the mist of the fluid into the chamber does not exceed a preset amount. The gas according to claim 12 or 13, wherein, when heating the chamber wall, a gas having a temperature higher than the temperature of the atmosphere outside the chamber wall is supplied into the chamber, and the chamber is supplied by the gas supplied into the chamber. The substrate processing method characterized by heating a wall. The substrate processing method according to claim 12 or 13, wherein, when heating the chamber wall, the chamber wall is heated by a heater provided in the chamber wall. A control medium storing a program that can be executed by a control computer of a substrate processing apparatus including a liquid processing tank for storing a cleaning liquid of a substrate and a drying unit disposed near the liquid processing tank, wherein the control computer is executed by executing the program. In controlling the substrate processing apparatus to execute the substrate processing method, The substrate processing method, Immersing the substrate in the cleaning liquid stored in the liquid treatment tank; Heating, in the drying unit, a chamber wall forming a chamber therein; After heating the chamber wall, supplying a mist of fluid into the chamber of the drying unit; Supplying a mist of fluid into the chamber, and then moving the substrate from the liquid processing tank to the chamber; Supplying a dry gas into the chamber while moving the substrate from within the liquid processing tank into the chamber of the drying unit or after moving the substrate from within the liquid processing tank to the chamber of the drying unit Storage medium comprising a.

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