KR102243270B1 - Apparatus for processing substrate - Google Patents

Abstract

A substrate processing apparatus is disclosed. A substrate processing apparatus according to the present invention is a substrate processing apparatus for vaporizing or drying a material on a substrate, and a body 100 including a chamber 101 providing a substrate processing space and a heat generating heat for heating the inside of the chamber 101 A portion 200 is included, and the lower portion BC of the main body 100 has a shape in which the size of the flat cross-sectional area decreases from the upper portion of the lower portion BC to the lower portion of the lower portion BC.

Description

Substrate processing equipment {APPARATUS FOR PROCESSING SUBSTRATE}

The present invention relates to a substrate processing apparatus. More specifically, a main body heating part for controlling the temperature of the inner side of the main body is provided, and an inclined angle is applied to the shape of the main body to prevent condensation of the substrate processing gas or volatile substances on the inner wall of the main body, and when condensed In the above, it relates to a substrate processing apparatus in which the condensed material can flow down along the inner surface of the main body.

In a substrate processing apparatus used in manufacturing a display device or a semiconductor device, a large amount of gas may be supplied and discharged into a chamber in which a substrate is processed. Such gas may be supplied to the inside of the chamber for the purpose of forming a thin film on the substrate, forming a pattern on the thin film on the substrate, or ventilating the atmosphere inside the chamber, and may be discharged from the chamber to the outside.

In particular, in the process of manufacturing a flexible substrate, it is common to inject a solvent to separate the flexible substrate from the non-flexible substrate, and the injected solvent component or the solvent component contained in the flexible substrate may be volatilized and discharged to the outside of the chamber. have.

During the substrate treatment process, there is a need to maintain a predetermined process temperature and process pressure inside the chamber. However, a phenomenon in which a solvent component or gas is condensed on the inner wall of the chamber may occur due to a difference in temperature and pressure between the outside of the chamber and the inside of the chamber. The condensed gas may further contaminate the inner wall of the chamber by repeating evaporation and condensation in repeated substrate treatment processes, reacting with gases of other chemical components, or deteriorating under a specific temperature environment.

As a result, in the conventional substrate processing apparatus, the contaminated material on the inner wall of the chamber re-evaporates during a subsequent substrate processing process and flows onto the substrate to contaminate the substrate, thereby reducing the reliability of the product and lowering the yield.

Further, in the conventional substrate processing apparatus, there is a problem in that a contaminated material on the inner wall of the chamber needs to be cleaned or the contaminated chamber wall itself needs to be replaced, so that the production cost of the product is increased.

An object of the present invention is to provide a substrate processing apparatus capable of maintaining an inner wall of a body at a predetermined temperature so that gas does not condense on the inner wall of the body, as conceived to solve the problems of the prior art as described above.

In addition, an object of the present invention is to provide a substrate processing apparatus in which a shape of a main body is changed so that a material condensed on an inner wall of a chamber can flow down.

Another object of the present invention is to provide a substrate processing apparatus capable of rapidly maintaining an inner wall of a body at a desired temperature by simultaneously using a temperature controller and a body heating unit.

In addition, an object of the present invention is to provide a substrate processing apparatus and a method for preventing condensation of volatile substances, which can increase product reliability and yield by keeping the inner wall of the chamber free from contamination.

In order to achieve the above object, a substrate processing apparatus according to an embodiment of the present invention is a substrate processing apparatus for vaporizing or drying a material on a substrate, comprising: a main body including a chamber providing a substrate processing space; A heating unit that heats the inside of the chamber; And a body heating unit disposed at at least one of an edge contacting the inner surface of the body and the upper surface of the body, or an edge contacting the inner surface of the body and the lower surface of the body, wherein the lower portion of the body is It is characterized in that it has a shape in which the size of the flat sectional area decreases from the top to the bottom of the bottom.

The upper portion of the main body may have a shape in which a size of a flat cross-sectional area decreases from an upper lower end to an upper upper end.

The body heating unit may be further disposed at at least one of an uppermost edge of the body or a lowermost edge of the body.

The main body may have a hexagonal shape in its front cross-section.

An upper portion of the main body or a lower portion of the main body may have a pyramid shape.

The material is aggregated on the inner side of the main body and flows down along the inner side, so that the material may be collected at the lower end of the main body.

The main body heating unit may maintain a temperature of the inner surface of the main body at 50° C. to 250° C. so that the material on the substrate vaporized or dried in the chamber is not condensed on the inner surface of the main body.

Further comprising a temperature control unit disposed on the outer surface of the main body to control the temperature of the inner surface of the main body, the front surface of the main body is formed with an entrance through which the substrate enters and exits, a door for opening and closing the entrance is installed, the A means for controlling the temperature of the door may be installed on the door.

The temperature control unit maintains the temperature of the inner surface of the main body at 50°C to 250°C so that the material on the substrate vaporized or dried in the chamber is not condensed on the inner surface of the main body, and the temperature of the door The adjusting means may maintain a temperature of a portion of the main body in contact with the door and the door at 50°C to 250°C so that the material does not condense on a portion of the main body in contact with the door and the door.

The material is a volatile material and may be a material vaporized at 50°C to 250°C.

The heating part and the main body heating part may include a heating element having a bar shape that communicates from one side of the chamber to the other side.

A gas supply unit connected to an outer side of the chamber to supply a substrate processing gas into the chamber; And a gas discharge unit connected to the other side of the chamber to discharge the substrate processing gas in the chamber to the outside.

At least one of the gas supply unit and the gas discharge unit may further include a drain port for discharging the material.

A plurality of material discharge holes may be formed on at least one side of the chamber.

According to the present invention configured as described above, there is an effect of maintaining the inner wall of the body at a predetermined temperature so that gas does not condense on the inner wall of the body.

In addition, according to the present invention, by changing the shape of the main body, there is an effect that the material condensed on the inner wall of the chamber can flow down.

In addition, according to the present invention, by using the temperature controller and the body heating unit at the same time, there is an effect that the inner wall of the body can be quickly maintained at a desired temperature.

In addition, according to the present invention, by keeping the inner wall of the chamber free from contamination, there is an effect of increasing the reliability and yield of the product.

1 is a perspective view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention.
2 is a front cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
3 is a schematic diagram showing a shape of a main body of a substrate processing apparatus according to an exemplary embodiment of the present invention.
4 is a schematic diagram showing the operation of the temperature controller according to an embodiment of the present invention.
5 is a partially enlarged perspective view of a door and an entrance according to an embodiment of the present invention.
6 is a cross-sectional view illustrating a gas supply unit and a gas discharge unit according to an exemplary embodiment of the present invention.
7 is a perspective view showing a form in which discharge holes are formed in the substrate processing apparatus according to an exemplary embodiment of the present invention.
8 is a schematic diagram showing a shape of a main body of a substrate processing apparatus according to another embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION The detailed description of the present invention described below refers to the accompanying drawings, which illustrate specific embodiments in which the present invention may be practiced. These embodiments are described in detail sufficient to enable a person skilled in the art to practice the present invention. It should be understood that the various embodiments of the present invention are different from each other, but need not be mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the present invention in relation to one embodiment. In addition, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the present invention. Accordingly, the detailed description to be described below is not intended to be taken in a limiting sense, and the scope of the present invention, if appropriately described, is limited only by the appended claims, along with all ranges equivalent to those claimed by the claims. In the drawings, similar reference numerals refer to the same or similar functions over various aspects, and the length, area, thickness, and the like may be exaggerated and expressed for convenience.

In the present specification, the substrate may be understood to include a substrate used for display devices such as LEDs and LCDs, a semiconductor substrate, a solar cell substrate, and the like, and preferably a flexible substrate used for a flexible display device. It can be understood as meaning of.

In addition, in the present specification, the substrate processing process may be understood to include a deposition process, a heat treatment process, etc., and preferably, a flexible substrate is formed on a non-flexible substrate, and a pattern is formed on the flexible substrate. , It may be understood to mean a process such as separation of a flexible substrate.

In addition, in the present specification, the material on the substrate may be understood as a concept including both a material that is in contact with the surface of the substrate and a material that does not contact the surface of the substrate but exists on the upper side of the substrate.

Hereinafter, an in-line heat treatment apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a front cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention, and FIG. 3 is a diagram illustrating an embodiment of the present invention. It is a schematic diagram showing the shape of the main body of the substrate processing apparatus according to the present invention.

1 to 3, the substrate processing apparatus according to the present embodiment may include a main body 100, a heating unit 200, and a main body heating unit 250.

The main body 100 constitutes a chamber 101, which is an enclosed space in which a substrate (not shown) is loaded and processed. The material of the body 100 may be at least one of quartz, stainless steel (SUS), aluminum, graphite, silicon carbide, or aluminum oxide.

A plurality of substrates may be disposed inside the chamber 101. The plurality of substrates may be disposed at regular intervals, respectively, and may be supported by a substrate holder (not shown), or may be seated on a boat (not shown) and disposed inside the chamber 101.

An entrance 115, which is a passage through which a substrate is loaded/unloaded, may be formed on one surface (for example, the front surface) of the main body 100. The entrance 115 may be formed only on one side [for example, the front side] of the main body 100, and may also be formed on the opposite side [for example, the rear side].

The door 110 may be installed on one side of the main body 100 (ie, the side on which the entrance 115 is formed). The door may be installed to be slidable in the front-rear direction, the left-right direction or the vertical direction. The door 110 can open and close the entrance 115, and the chamber 101 can of course be opened or closed depending on whether the entrance 115 is opened or closed. In addition, a sealing member 116 such as an O-ring (O-ring) between the door 110 and the surface on which the entrance 115 of the main body 100 is formed so that the entrance 115 is completely sealed by the door 110 5] may be interposed.

Meanwhile, the reinforcing rib 120 may be coupled to the outer surface of the main body 100. The body 100 may be damaged or deformed under the influence of strong pressure or high temperature inside during the process. Therefore, by coupling the reinforcing ribs 120 on the outer surface of the main body 100, durability of the main body 100 may be improved. If necessary, the reinforcing ribs 120 may be combined only on a specific outer surface or a part of the outer surface.

The heating unit 200 heats the inside of the chamber 101 to create a substrate processing atmosphere, and a main heating unit 210 that directly heats the substrate and an auxiliary function that prevents heat loss inside the chamber 101. It may include a heating unit 220.

The main heating unit 210 may be disposed in a direction perpendicular to the loading/unloading direction of the substrate (not shown), that is, in the front-rear direction of the main body 100, having a predetermined distance, and is perpendicular to the stacking direction of the substrate. It can be arranged at regular intervals. The auxiliary heating unit 220 has a regular interval in a direction parallel to the loading/unloading direction of the substrate (not shown), that is, in the left and right direction of the main body 100 along the stacking direction of the substrate on the inner wall of the chamber 101. Can be placed while having.

The main heating unit 210 may include a plurality of heating elements 211 and terminals 212 installed at both ends of each of the heating elements 211, and the auxiliary heating elements 220 may also include a plurality of heating elements 221 and each It may include terminals 222 installed at both ends of the heating element 221 of. The number of heating elements 211 and 221 may be variously changed according to the size of the body 100 and the size and number of substrates.

The heating elements 211 and 221 have a bar shape that communicates from one side of the chamber 101 to the other side, and may have a form in which a heating material is inserted into the quartz tube. For example, the heating element 211 of the main heating part 210 may be in communication from the left side to the right side of the chamber 101, and the heating element 221 of the auxiliary heating part 220 is a chamber excluding the entrance 115 part. It can communicate from the front of 101 to the rear. The terminals 212 and 222 receive power from an external power source (not shown) to generate heat in the heating elements 211 and 221.

Accordingly, the entire surface of the substrate 10 can be uniformly heated by the heating units 200 disposed above and below, thereby improving the reliability of the substrate processing process.

The main body of a conventional substrate processing apparatus generally has a shape of a cube or a rectangular parallelepiped. Since the front, rear, left and right sides of the main body are formed perpendicular to the ground, condensed droplets (or condensed gas, material) can flow down by gravity acting even if the material is condensed on this side. However, since the upper and lower surfaces of the main body are formed parallel to the ground, if the material is condensed on this surface, it does not flow down along the inner surface of the main body. That is, droplets remain on the lower surface of the main body, and cannot be discharged along the outlet of the lower surface of the main body. In this case, in a substrate treatment process in which the condensed material is repeated, evaporation and condensation are repeated, reacting with gases of other chemical components, or deterioration under a specific temperature environment, thereby further contaminating the inner wall of the chamber.

Therefore, in the present invention, the size of the flat cross-sectional area decreases as the lower part BC (refer to FIGS. 2 and 3) of the main body 100 goes from the upper part BC1 of the lower part BC to the lower part BC2 of the lower part BC. It is characterized in that it has a losing shape. The flat cross-section is an x-y plane, which means that the area of the x-y plane of the upper part BC1 of the lower part BC of the main body 100 is larger than the area of the x-y plane of the lower part BC and the lower part BC2 of the main body 100. In other words, the lower surface of the main body 100 is not parallel to the ground, and at least one surface 100b constituting the front, rear, left and right sides 100a of the main body 100 and the lower part BC of the main body 100 is vertical. It is not characterized in that it is formed in an inclined manner.

An angle (inclined angle; a) formed between the front and rear sides 100a of the main body 100 and at least one surface 100b constituting the lower portion BC of the main body 100 may be 90° to 180°. . However, if it is too close to 90°, condensed droplets may remain on the lower surface substantially like the conventional hexahedral body 100, and if it is close to 180°, there is a problem that the height of the main body 100 is unnecessarily increased. Since it may occur, it is preferable to achieve an angle (a) of about 100° to 160°, and more preferably achieve an angle of 120°.

The shape of the lower part BC of the main body 100 may be represented by a pyramid shape, and considering that the side surface 100a of the main body 100 is composed of four front, rear, left and right sides, the lower part of the main body 100 The shape of (BC) may be a square pyramid shape.

Alternatively, in order to satisfy the shape condition of the main body 100 without being a pyramid, the front end surface of the main body 100 may have a hexagonal shape. In other words, it may have a shape in which a hexagonal column is erected. In this specification, it is assumed that the front cross-section of the main body 100 is a hexagonal shape. The shape in which the front cross-section of the main body 100 is hexagonal means that the shape of the upper part TC of the main body 100 to be described later also has the same shape as the lower part BC.

On the other hand, the surface roughness of the inner surface of the main body 100 may be formed to Ra 1.0 μm or less so that the condensed droplets can flow down more easily. The surface roughness can be controlled through polishing, and when the surface roughness is Ra 1.0 μm or less, a heat reflection effect on the inner surface of the main body 100 can be expected.

Since the main body 100 has a shape in which the size of the flat sectional area decreases from the upper end BC1 of the lower part BC to the lower end BC2 of the lower part BC, that is, the front and rear sides 100a of the main body 100 ) And the lower surface 100b of the main body 100 are formed to be inclined rather than vertical, the droplets condensed on the inner surface of the main body 100 may be collected in the lower part BC of the main body 100. The condensed droplets on the front, rear, left and right inner surfaces of the main body 100 flow down by gravity, and at the boundary between the front and rear, left and right sides 100a and the lower surface 100b of the main body 100, they are continuously inclined by gravity. It can flow down along the formed lower surface (100b). Thus, droplets may be collected to the lower end of the main body 100. The collected droplets may be discharged to the outside through a discharge means 130 formed at the lower end of the main body 100 and a pumping means (not shown) to be reused or discarded.

Meanwhile, the top (TC) of the main body 100 may have a shape in which the size of the flat cross-sectional area decreases from the top (TC) bottom (TC2) to the top (TC) top (TC1). In other words, the upper surface of the main body 100 is not parallel to the ground, and at least one surface 100c constituting the front, rear, left and right sides 100a of the main body 100 and the upper part TC of the main body 100 is vertical. Does not, and may be formed in an inclined manner.

An angle (inclined angle; b) formed between the front and rear sides 100a of the main body 100 and at least one surface 100c constituting the upper portion TC of the main body 100 may be 90° to 180°. . However, if it is too close to 90°, condensed droplets may remain on the upper surface substantially like the conventional hexahedral body 100, and if it is close to 180°, the height of the main body 100 is unnecessarily increased. Can occur. Particularly, if the condensed droplets close to 90° remain on the upper surface of the main body 100 and fall during the substrate processing process and fall on the substrate, the substrate may be contaminated. Therefore, the angle (b) formed by the front and rear, left and right sides (100a) of the body (100) and at least one surface (100c) constituting the upper surface of the body (100) is preferably an angle of about 100 ° to 160 °. And, it is more preferable to achieve an angle of 120°.

The shape of the upper part TC of the main body 100 may be represented by a pyramid shape, and considering that the side surface 100a of the main body 100 is composed of four front, rear, left and right sides, the upper part of the main body 100 The shape of (TC) may be a square pyramid shape.

Since the size of the flat cross-sectional area decreases from the lower portion TC2 of the upper portion TC of the main body 100 to the upper portion TC1 of the upper portion TC, that is, the front, rear, left and right sides 100a of the main body 100 ) And the upper surface 100c of the main body 100 are formed inclined rather than vertically, the droplet condensed on the inside of at least one surface 100c constituting the upper part TC of the main body 100 is the main body ( It can flow down along the inside of 100). That is, droplets condensed on the inner side of at least one surface 100c constituting the upper portion TC of the main body 100 do not fall directly onto the substrate, but flow down along the inner side, and inside the front and rear, left and right sides of the main body 100 Passing through the side surface (100a), flows down to the lower end of the main body 100 may be collected. The collected droplets may be discharged to the outside through a discharge means 130 formed at the lower end of the main body 100 and a pumping means (not shown) to be reused or discarded.

On the other hand, the substrate processing apparatus of the present invention is characterized in that the main body heaters 250 (250a, 250c, 250d) are disposed at a corner portion where the surface of the main body 100 and the surface are in contact with each other. More specifically, the edge portion of the boundary between the inner surface 100a of the main body 100 and the upper surface 100c of the main body 100, or the inner surface 100a of the main body 100 and the lower part of the main body 100 It is characterized in that the main body heaters 250c and 250d are disposed on at least one of the edge portions of the boundary where the surface 100b is in contact with each other.

In addition, when the shape of the front end surface of the body 100 is a hexagonal shape, the uppermost edge of the body 100 (the upper end (TC1) edge of the upper part (TC)) or the lowermost edge (the lower end (BC2) edge of the lower part (BC)) The main body heating parts 250a and 250b may be disposed in ].

The body heater 250 may serve to regulate the temperature of the inner wall of the body 100 by heating the inner surfaces 100a, 100b, and 100c of the body 100 rather than heating the inside of the chamber 101. By adjusting the temperature of the inner wall of the main body 100, a volatile substance to be described later may not be condensed on the inner wall of the main body 100 and may exist in a gaseous state. Preferably, the main body heater 250 may maintain the temperature of the inner wall of the main body 100 at 50°C to 250°C.

In particular, the size of the flat sectional area decreases from the top (BC1) of the lower part (BC) of the main body (BC) to the lower part (BC2) of the lower part (BC), and the lower part (TC2) of the upper part (TC) of the main body 100 ) To the top (TC1) of the top (TC), the size of the flat cross-sectional area decreases, and when the shape of the front cross-section of the main body 100 is a hexagonal shape, heat is unevenly transmitted to the corners and a lot of volatile substances are condensed. Can be. Therefore, it is preferable that the main body heater 250 is intensively disposed at a corner portion or a curved portion of the main body 100.

In addition, the main body heater 250 may be additionally disposed on the upper side 100c and the lower side 100b, which have a large area among the inner side of the main body 100 and are likely to condense volatile substances on the inner wall. In addition, one main body heating unit 250 may be disposed for each corner, and a plurality of main body heating units 250 may be intensively disposed.

The body heater 250, like the heater 200, has a bar shape that communicates from one side of the body 100 to the other side, and may have a form in which a heating material is inserted into the quartz tube. 251 and a terminal 252 may be included. For example, in the present specification, the main heater 250 is shown to be disposed in a direction perpendicular to the loading/unloading direction of the substrate 10 (the same direction as the main heater 210), but is not limited thereto. It can be freely arranged within the range of being arranged at the corners.

Referring back to FIGS. 1 and 2, the substrate processing apparatus may further include a gas supply unit 300 and a gas discharge unit 400.

The gas supply unit 300 is connected to the outer one side [for example, the left side] of the chamber 101 (or the main body 100), and the gas discharge unit 400 is the chamber 101 (or the main body 100) It may be connected to the other side of the [for example, the right side].

The gas supply unit 300 may provide a passage for supplying a substrate processing gas into the chamber 101. The gas supply unit 300 includes a gas supply pipe 320 connected to a gas storage unit (not shown) to receive a substrate processing gas and a plurality of gas discharge pipes 310 formed to have a regular interval perpendicular to the gas supply pipe 320. Can include. The gas discharge pipe 310 may pass through the main body 100 and be connected to the inside of the chamber 101, and the substrate processing gas is supplied to the chamber 101 through a gas discharge hole 311 formed at the end of the gas discharge pipe 310. Can be supplied internally.

The gas discharge unit 400 may provide a passage for discharging the substrate processing gas inside the chamber 101 to the outside. The gas discharge unit 400 is connected to an external gas discharge facility (not shown) to discharge a substrate processing gas, and a plurality of gas discharge pipes 410 formed to have a regular interval perpendicular to the gas discharge pipe 420 ) Can be included. The gas discharge pipe 410 may pass through the main body 100 and be connected to the inside of the chamber 101, and gas is transferred from the inside of the chamber 101 to the outside through the gas discharge hole 411 formed at the end of the gas discharge pipe 410. Can be discharged.

The gas discharge hole 311 (or gas discharge pipe 310) and the gas discharge hole 411 (or gas discharge pipe 410), when a plurality of substrates 10 are accommodated in the chamber 101, substrate processing In order to uniformly supply the gas to the substrate and to easily suck in the substrate processing gas and discharge it to the outside, it is preferable to be positioned at a distance between the substrate disposed in the chamber 101 and the substrate adjacent to the upper or lower portion. .

In accordance with an embodiment of the present invention, a description will be given of a substrate processing apparatus processing a flexible substrate used in a flexible display device as follows.

In general, the manufacturing process of the flexible substrate may be divided into a process of forming a flexible substrate on a non-flexible substrate, a process of forming a pattern on the flexible substrate, and a process of separating the flexible substrate from the non-flexible substrate.

For the flexible substrate, a film made of polyimide, such as glass or plastic, is formed on a non-flexible substrate such as glass, plastic, etc., and cured by heat treatment, and then a solvent is injected into the material that adheres the non-flexible substrate and the flexible substrate to weaken adhesion It can be completed by separating the flexible substrate from the non-flexible substrate by decomposing or decomposing the adhesive material.

At this time, the solvent component to be injected or the solvent component included in the flexible substrate during the formation process of the flexible substrate may be volatilized and discharged to the outside of the chamber 101 through the gas discharge unit 400, but the outside of the chamber 101 and the chamber (101) Due to the difference in temperature and pressure inside the chamber 101, a predetermined portion of the inner wall of the chamber 101 may have a low temperature of the inner wall of the chamber 101 such that the above material cannot be volatilized and condensed. As a result, the solvent component condensed on the inner wall of the chamber 101 may contaminate the chamber 101 or contaminate the substrate 10 in a subsequent process. For example, a material existing on at least a portion of the surface of the substrate 10 is a volatile material such as a solvent, and may be a material vaporized at 50°C to 250°C. Such a material may preferably be n-methyl-2-pyrrolidone (NMP), and may be a volatile material such as IPA, acetone, or PGMEA (Propylene Glycol Monomethyl Ether Acetate).

Accordingly, in the substrate processing apparatus of the present invention, when the gas in the chamber 101 containing solvent is condensed on the inner wall of the chamber 101, the condensed droplets do not remain on the inner wall of the chamber 101 (or the inner wall of the main body 100). It is characterized in that inclined angles (a, b) are applied to the shape of the main body 100 so that it can be collected from the lower end of the main body 100 by allowing it to flow down without flowing down.

In the present invention, the condensed material can flow to the outside through a simple configuration in which the shape of the main body 100 is changed, and thus, by keeping the inner wall of the chamber free from contamination, there is an effect of increasing the reliability and yield of the product. have.

In addition, it is characterized in that the temperature of the inner wall of the main body 100 is maintained so that the gas is not condensed so that the condensed droplets do not remain on the inner wall of the chamber 101 and are discharged to the outside even in a gaseous state. As the main body heater part 250 is disposed at the edge of the main body 100 in which the condensed droplets are more concentrated, the condensed droplets are volatilized in a gaseous state, and thus the inner wall of the chamber is not contaminated, There is an effect that can increase the reliability and yield of.

On the other hand, the substrate processing apparatus of the present invention includes a temperature controller 500 for controlling the temperature inside the wall of the main body 100 or the chamber 101 after the completion of the substrate processing process or during the substrate processing process, if necessary. It can also be installed and operated on the outer side of the.

The temperature control unit 500 may be disposed adjacent to the outer surface of the main body wall or spaced apart by a predetermined distance, and a pipe through which a heat medium or refrigerant may flow is arranged to be bent in a zigzag manner. It is desirable to do it. The temperature control unit 500 determines the temperature of the inner wall of the main body 100 so that the material volatilized on the substrate 10 and the material supplied to and discharged from the chamber 101 are not condensed on the inner wall of the main body 100 during the substrate processing process. It can play a role of maintaining the temperature of. Preferably, the temperature of the inner wall of the main body 100 may be maintained at 50°C to 250°C.

The temperature control unit 500 may be disposed on all outer surfaces of the main body 100, but within the range achieved for the purpose of the present invention to maintain the inner wall temperature of the main body 100 at a predetermined temperature, Arrangement of the temperature control unit 500 may be omitted on some outer surfaces.

4 is a schematic diagram showing the operation of the temperature control unit 500 according to an embodiment of the present invention.

Referring to FIG. 4, a 3-way valve (3WV) may be installed between the temperature controller 500, the body wall heating module 600, and the body wall cooling module 700. The body wall heating module 600 may be understood as a device for heating and supplying cooling water, including a heat exchanger capable of instantaneously raising the temperature of the cooling water (Process Cooling Water, PCW), and the body wall cooling module 700 Can be understood as a device that supplies cooling water.

For example, during the substrate processing process, the substrate processing temperature inside the chamber 101 (or the main body 100) may be increased stepwise from 80°C to 150°C, 150°C to 250°C, 250°C to 350°C, etc. . In the initial stage of substrate processing, since the substrate processing temperature inside the chamber 101 is about 80° C., the temperature of the inner wall of the main body 10 may be lower than 60 to 80° C., and a volatile material having an evaporation band of about 80 to 150° C. One of the NMPs is likely to be condensed on the inner wall of the main body 100. Therefore, in the initial stage of substrate processing, by controlling the 3-way valve (3WV) to heat and supply cooling water from the body wall heating module 600 to the temperature control unit 500 (P1), the temperature of the body wall is reduced to the minimum evaporation band of NMP. It can be maintained above 80℃.

Since the body heating unit 250 can control the temperature of the body wall faster than using the temperature control unit 500, condensation of volatile substances on the inner wall of the body 100 can be more effectively prevented. That is, by controlling the body heating unit 250, the temperature of the body wall can be quickly maintained above 80° C., which is the minimum evaporation band of NMP. Of course, it is also possible to use a combination of the body heating unit 250 and the temperature controller 500.

When the substrate processing temperature inside the chamber 101 is 300°C or less, the main body wall heating module 600 is operated, and when the substrate processing temperature inside the chamber 101 exceeds 300°C, the 3-way valve 3WV is turned on. By controlling and supplying cooling water from the body wall cooling module 700 to the temperature controller 500 (P2), the temperature of the body wall can be maintained above 80°C, which is the minimum evaporation band of NMP. Of course, when the substrate processing temperature inside the chamber 101 exceeds 300°C, the temperature of the body wall may be 80°C or higher even if cooling water is not supplied to the temperature control unit 500, but the temperature of the body wall rises too much. Therefore, when the evaporation band of volatile substances exceeds 80 to 250°C, distortion and damage of the body wall may occur. Therefore, it is necessary to appropriately supply cooling water to the temperature control unit 500 through the body wall cooling module 700. . In other words, when the substrate processing temperature inside the chamber 101 is 300°C or less, the body wall heating module 600 is operated, and when the substrate processing temperature inside the chamber 101 exceeds 300°C, the body wall cooling module 700 By operating, the temperature of the inner wall of the main body 100 can be maintained at 50°C to 250°C.

5 is a partially enlarged perspective view of the door 110 and the entrance 115 according to an embodiment of the present invention.

Referring to FIG. 5, a means for adjusting the temperature of the door 110 may be installed in the door 110. Hereinafter, the door heating unit 230, which is a wire heater and a plate heater, is assumed to be a temperature control means of the door 110, but is not limited thereto, and a known technique for controlling the temperature of the door 110 may be applied. Reveal.

The door 110 interposes a sealing member 116 so that the entrance 115 can be sealed, and may be installed on one surface of the main body 100 (ie, the surface on which the entrance 115 is formed). The part (IC) of the main body 100, that is, the interface part (IC) in contact with the drawing 110 and the entrance 115 is a greater amount of gas due to the temperature difference between the outside of the chamber 101 and the inside of the chamber 101, Substances and the like may be condensed. Of course, condensed droplets can flow down along the inner surface of the main body 100, but due to a large amount, there is a high possibility that droplets remain in the interface portion IC.

Therefore, by installing a means for adjusting the temperature of the door 110, that is, the door heating element 230 on the door 110, the portion (IC) of the main body 100 in contact with the door 110 and the entrance 115 Heat can be generated to maintain the temperature between 50°C and 250°C. Since the temperature of 50°C to 250°C is maintained, gases and substances may be vaporized without condensing on the inner wall of the chamber 101. Thus, there is an effect of preventing contamination in the portion IC of the main body 100 where the door 110 and the entrance 115, which have a high possibility of remaining droplets, are in contact.

Meanwhile, the substrate treatment apparatus of the present invention may further include a means for discharging the condensed gas. Hereinafter, it will be described with reference to FIGS. 6 and 7.

6 is a cross-sectional view illustrating a gas supply unit 300 and a gas discharge unit 400 according to an embodiment of the present invention. 6(a) shows the gas supply unit 300, and FIG. 6(b) shows the gas discharge unit 400.

The gas supply unit 300 and the gas discharge unit 400 connected to the outer one side [for example, the left side] and the other outer side [for example, the right side] of the chamber 101 are affected by the external low temperature, so that the gas is Can be easily condensed. The condensed gas is condensed in the tube of the gas supply unit 300 and is discharged into the chamber 101 along with the supply of the substrate processing gas during the substrate processing process, thereby causing contamination of the substrate.

Accordingly, as shown in (a) of FIG. 6, the gas supply unit 300 may further include a drain port 330 capable of discharging the condensed gas (or condensed volatile material). . The drain port 330 may simply be a passage through which condensed droplets flow out, or may be connected to a pump (not shown) and may have a suction function capable of inhaling air. Gas may be supplied (g) through the gas supply pipe 320, and gas condensed in the gas supply unit 300 may be discharged (d) through the drain port 330.

The gas discharge unit 400 may also have a configuration in which a drain port (not shown) is connected to the gas discharge pipe 420 in the same manner as the gas supply unit 300.

On the other hand, as shown in (b) of FIG. 6, the gas discharge unit 400 serves to discharge (g) the gas inside the chamber 101 to the outside, so that a separate drain port (not shown) is provided. Needless to say, the gas in the chamber 101 is discharged to the outside (g) so that the end 430 of the gas discharge pipe 420 can serve as a drain port and at the same time condensed inside the gas discharge part 400 Gas can be discharged to the outside together (d).

7 is a perspective view showing a form in which discharge holes 140 (140a, 140b, 140c) are formed in the substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 7, at least one side surface of the chamber 101, specifically, the left and right sides of the chamber 101 in which the gas supply unit 300 and the gas discharge unit 400 described with reference to FIG. 5 are disposed. A plurality of discharge holes 140 (140a, 140b, 140c) may be formed on the excluding side. The discharge hole 140 is connected to a pumping means (not shown) disposed outside to effectively discharge the condensed material inside the chamber 101.

Although the droplets condensed in the inner side (100a, 100b, 100c) of the main body 100 can flow down along the inner side (100a, 100b, 100c) by gravity, the inner side (100a, 100b, A situation that remains on the 100c) phase may occur. Therefore, by forming a plurality of discharge holes 140 on the inner surface (100a, 100b, 100c), even if a situation occurs in which the gas is condensed and remains in the inner wall of the chamber 101, the outside through the discharge hole 140 By discharging to, there is an advantage that contamination of the inner wall of the chamber 101 can be more effectively prevented and the reliability and yield of the product can be further increased.

8 is a schematic diagram showing a shape of a main body 100 of a substrate processing apparatus according to another embodiment of the present invention.

In the substrate processing apparatus of the present invention, the lower portion BC of the main body 100 has a shape in which the size of the flat cross-sectional area decreases from the lower upper portion BC1 to the lower lower portion BC2, and the upper portion TC of the main body 100 Has a shape in which the size of the flat cross-sectional area decreases from the top bottom (TC2) to the top top (TC1), so that condensed droplets can flow down along the inside of the main body 100 by gravity, There is no limit. In addition to the shape in which the front cross-section is a hexagonal shape, the front cross-section may be formed of an octagonal or higher polygon as shown in FIG. 8.

In addition, when the front cross-section is composed of a polygonal shape of a hexagonal shape or more, the main body heaters 250 (250a, 250b, 250c, 250d) may be disposed at a corner portion where the surface of the main body 100 and the surface contact each other.

Although the present invention has been shown and described with reference to a preferred embodiment as described above, it is not limited to the above embodiment, and within the scope not departing from the spirit of the present invention, various It can be transformed and changed. Such modifications and variations should be viewed as falling within the scope of the present invention and the appended claims.

100: main body
101: chamber
110: door
120: reinforcing rib
130: discharge means
140: discharge hole
200: heating part
210: main heating part
220: auxiliary heating part
230: door heating part
250: body heating part
300: gas supply
400: gas discharge unit
500: cooling unit
BC: lower body
BC1: The upper part of the lower part of the body
BC2: Lower body bottom
TC: upper body
TC1: The upper part of the main body
TC2: upper and lower body
a, b: angle

Claims (14)

A substrate processing apparatus for vaporizing or drying a material on a substrate,
A main body including a chamber providing a substrate processing space;
A heating unit that heats the inside of the chamber; And
A main body heating unit disposed at at least one of an edge where the inner surface of the main body and the upper surface of the main body are in contact, or an edge where the inner surface of the main body and the lower surface of the main body are in contact with each other.
Including,
The main body has a hexagonal shape in its front cross section,
The upper portion of the main body has a shape in which the size of the flat cross-sectional area decreases from the upper lower end to the upper upper end, and
The body heating unit is further disposed at the uppermost edge of the body and the lowermost edge of the body. delete delete delete The method of claim 1,
An upper portion of the main body or a lower portion of the main body has a pyramid shape. The method of claim 1,
The substrate processing apparatus, wherein the material is aggregated on an inner surface of the body and flows down along the inner surface to be collected at a lower end of the body. The method of claim 1,
The main body heating unit maintains a temperature of the inner surface of the main body at 50° C. to 250° C. so that the material on the substrate vaporized or dried in the chamber is not condensed on the inner surface of the main body. The method of claim 1,
It is disposed on the outer surface of the body and further comprises a temperature control unit for controlling the temperature of the inner surface of the body,
A doorway through which the substrate enters and exits is formed on the front surface of the main body, and a door for opening and closing the doorway is installed,
The substrate processing apparatus, wherein the door is provided with a means for adjusting the temperature of the door. The method of claim 8,
The temperature control unit maintains the temperature of the inner surface of the main body at 50° C. to 250° C. so that the material on the substrate vaporized or dried in the chamber is not condensed on the inner surface of the main body,
The means for controlling the temperature of the door maintains the temperature of the part of the main body in contact with the door and the door at 50°C to 250°C so that the material does not condense on the part of the main body where the door and the door contact each other A substrate processing apparatus. The method according to claim 7 or 9,
The material is a volatile material, which is a material that is vaporized at 50°C to 250°C. The method of claim 1,
The substrate processing apparatus, wherein the heating unit and the main body heating unit include a bar-shaped heating element communicating from one side of the chamber to the other side of the chamber. The method of claim 1,
A gas supply unit connected to an outer side of the chamber to supply a substrate processing gas into the chamber; And
A gas discharge unit connected to the other side of the chamber to discharge the substrate processing gas in the chamber to the outside
Further comprising a substrate processing apparatus. The method of claim 12,
At least one of the gas supply unit and the gas discharge unit further includes a drain port for discharging the material. The method of claim 1,
A substrate processing apparatus, wherein a plurality of material discharge holes are formed on at least one side of the chamber.

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