CN109244009A - Wet-method etching device - Google Patents
Wet-method etching device Download PDFInfo
- Publication number
- CN109244009A CN109244009A CN201811019132.3A CN201811019132A CN109244009A CN 109244009 A CN109244009 A CN 109244009A CN 201811019132 A CN201811019132 A CN 201811019132A CN 109244009 A CN109244009 A CN 109244009A
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- Prior art keywords
- gas
- etching
- etch chamber
- etching liquid
- wet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The present invention provides a kind of Wet-method etching device, including an etch chamber, multiple etching nozzle for liquid are provided in the etch chamber, sample stage is provided with below the etching nozzle for liquid, the top of the etch chamber has a gas heating room being isolated with the etch chamber, gas heating room has an air inlet and a gas outlet, hot gas enters from the air inlet, after flowing through gas heating room, it is discharged from the gas outlet, it is heated in the gas indoor, the hot gas can heat the top of the etch chamber, the head temperature of the etch chamber is set to be higher than the temperature inside the etch chamber.It is an advantage of the current invention that etching liquid aerosol can be prevented to be condensed into drop on the cover board by the top for heating the etch chamber, the situation for reducing the etching unevenness that drips generate on sample occurs；Alleviate etching liquid holding tank and anti-carves the temperature difference for losing intracavitary etching liquid；Keep cover board cleaning, it is possible to provide clearly etch chamber observation window.
Description
Technical field
The present invention relates to field of display devices more particularly to a kind of Wet-method etching devices.
Background technique
In field of display technology, liquid crystal display (Liquid Crystal Display, LCD) and active matrix drive type
The plates such as organic electroluminescence display device and method of manufacturing same (Active Matrix Organic Light-Emitting Diode, AMOLED)
Display device is widely used, such as: mobile electricity because having many merits such as thin fuselage, high image quality, power saving, radiationless
Words, personal digital assistant (PDA), digital camera, computer screen or notebook screens etc..
Thin film transistor (TFT) (Thin Film Transistor, TFT) array (Array) substrate be current LCD device and
Main building block in AMOLED device, is directly related to the developing direction of high performance flat display device.Such as the work of LCD
Skill generally comprises: leading portion array processes, middle section are wrapped again at box (Cell) technique and back segment module group assembling technique, leading portion array processes
Include: the cleaning and drying of glass substrate, resist coating, exposure, development, etching, remove the techniques such as photoresist at plated film.Etch work
Skill be divided into again wet process (WET) etching and dry method (DRY) etching, wherein the effect of wet etching for wiring fine degree and
The quality of final panel has a great impact, therefore etching size deviation (CD Bias) and etching size (CD) homogeneity are wet
Important feature value after method etching.For example, for second layer metal, if etching size is uneven namely partial region
Conducting wire is wider, will cause the difference that second layer metal and first layer metal between pixel hand over capping product, that is to say, that generate different
Capacitance coupling effect, make panel quality deviate design value.
In currently used wet etching mode, fountain and infiltration type etching mode are more common, for example, fountain is normal
The bubble generated on substrate for removing etching initial stage medical fluid, which will lead to etching unevenly or etching liquid remains, from
And reduce yield.Wherein, the shortcomings that fountain etching mode, is, in fountain etching process, the etching liquid meeting that volatilizes
It condenses to form drop in the upper lid surface of etching apparatus, the sight of the liquid droplets intercept etching cavity, is not easy to staff's observation
Situation is etched, and as etching drop gradually accumulates, can be dropped on substrate to be etched, example uneven so as to cause etching
Such as, etching liquid, which is dropped on substrate, leads to overetch and metal wire is made to break, and product yield is caused to reduce.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of Wet-method etching devices, can prevent etching liquid aerosol
It is condensed into drop on the cover board, the situation for reducing the etching unevenness that drips generate on sample occurs, and alleviates etching liquid and deposits
Storage tank and anti-carve the temperature difference for losing intracavitary etching liquid；Keep cover board cleaning, it is possible to provide clearly etch chamber observation window.
To solve the above-mentioned problems, the present invention provides a kind of Wet-method etching device, including an etch chamber, the etch chambers
It is inside provided with sample stage, the top of the etch chamber has a gas heating room being isolated with the etch chamber, and the gas adds
Hot cell has an air inlet and a gas outlet, and hot gas enters from the air inlet, after flowing through gas heating room, from it is described out
Port discharge heats interior in the gas, and the hot gas can heat the cover board at the top of the etch chamber, make the etch chamber
The temperature of the cover board at top is higher than the temperature inside the etch chamber.
In one embodiment, the Wet-method etching device further includes a hot gas system, and the hot gas system includes a gas
Heater, a gas feeding duct and a gas outlet duct, the gas heater are used for heat gas, the gas heating
The air inlet of the connection of one end of device and gas feeding duct, the other end of the gas feeding duct and gas heating room connects
Logical, the gas outlet duct is connected to the gas outlet of gas heating room, and the gas of the gas heater heating is through institute
It states gas feeding duct and is input to gas heating room, and exported through the gas outlet duct.
In one embodiment, the hot gas system further includes an air intake valve and outlet valve, the air intake valve setting
On the gas feeding duct, the outlet valve is arranged on the gas outlet duct.
In one embodiment, the hot gas system further includes a charge flow rate monitor and an outlet flow monitor, institute
It states charge flow rate monitor to be connected to the gas feeding duct, the outlet flow monitor and the gas outlet duct connect
It is logical.
In one embodiment, the hot gas system further includes an intake air temperature sensor, the intake air temperature sensor with
The gas feeding duct connection.
In one embodiment, one end that the gas feeding duct is connected to the air inlet of gas heating room is provided with
One nozzle of air supply, hot gas spray into the gas through the nozzle of air supply and heat room.
In one embodiment, the top of the etch chamber has double-layer cover plate, and the double-layer cover plate surrounds the gas and adds
Hot cell.
In one embodiment, the Wet-method etching device further includes at least one etching nozzle for liquid and an etching liquid feed liquor
Mouthful, the etching nozzle for liquid is arranged above the sample stage, and for spraying etching liquid, etching liquid can pass through the etching liquid
Inlet enters the etch chamber.
In one embodiment, the Wet-method etching device further includes an etching liquid holding tank, etching liquid input channel, etching
Liquid discharge line and etching liquid exhaust pipe, the etching liquid holding tank are located at except the etch chamber, etching liquid input channel
One end is connected to the etching liquid holding tank, and the other end is connected to the etch chamber, by the quarter in the etching liquid holding tank
Erosion liquid be sent to etch chamber, one end of the etching liquid discharge line is connected to the bottom of the etch chamber, the other end with it is described
The connection of etching liquid holding tank, is emitted into etching liquid holding tank, the etching liquid exhaust pipe for the etching liquid accumulated in etch chamber
It is connected to the etch chamber, by the etching liquid discharge of steam in etch chamber to exterior space.
In one embodiment, the gas outlet of gas heating room is connected to the etching liquid exhaust pipe, the hot gas
It is discharged through the etching liquid exhaust pipe.
It is an advantage of the current invention that Wet-method etching device of the present invention is added by the way that a gas is arranged at the top of the etch chamber
The cover board is more specifically heated to heat the top of the etch chamber in hot cell, to prevent etching liquid aerosol cold on the cover board
Drop is congealed into, the situation for reducing the etching unevenness that drips generate on sample occurs；Alleviate etching liquid holding tank and anti-carves
Lose the temperature difference of intracavitary etching liquid；Keep cover board cleaning, it is possible to provide clearly etch chamber observation window.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of an embodiment of Wet-method etching device of the present invention；
Fig. 2 is the structural schematic diagram of another embodiment of Wet-method etching device of the present invention.
Specific embodiment
It elaborates with reference to the accompanying drawing to the specific embodiment of Wet-method etching device provided by the invention.
Fig. 1 is the structural schematic diagram of Wet-method etching device of the present invention, referring to Fig. 1, the Wet-method etching device includes one
Etch chamber 10.The etch chamber 10 is a cavity, and etching technics carries out in the etch chamber 10.It is set in the etch chamber 10
It is equipped with sample stage 12.The sample stage 12 is all components for needing to etch for placing sample 13, the sample 13, such as aobvious
Show the substrate of panel.Wherein, the sample stage 12 can be driven, and then be able to drive the sample 13 and entered or spread out of the etching
Chamber 10.
It is provided at least one etching nozzle for liquid 11 in the etch chamber 10, schematically depicts five etchings in Fig. 1
Nozzle for liquid 11, the etching nozzle for liquid 11 can be used for fountain etching.In other embodiments, the quantity of the etching nozzle for liquid
It can require to be arranged according to practice.The etching nozzle for liquid 11 is arranged above the sample stage 12, for spraying etching liquid.It is described
Wet-method etching device further includes an etching liquid inlet 16.When needing to perform etching sample 13 by the way of infiltration type,
Etching liquid is entered in the etch chamber 10 by the etching liquid inlet 16, and infiltrates the sample 13.
The top of the etch chamber 10 has a gas heating room 20 being isolated with the etch chamber 10.With the etch chamber
10 isolation refer to the gas heating room 20 and the etch chamber 10 independently of one another, not intercommunication, in gas heating room 20
Hot gas will not enter the etch chamber 10, the etching liquid and its steam in the etch chamber 10 will not enter the gas and add
Hot cell 20.
Gas heating room 20 has an air inlet 21 and a gas outlet 22.Hot gas enters from the air inlet 21, stream
After the gas heats room 20, it is discharged from the gas outlet 22, wherein the trend of hot gas is as shown by arrows in figure.The heat
Gas includes but is not limited to the air of the drying of heat.
In gas heating room 20, the hot gas can heat the top of the etch chamber 10, so that the etching
The head temperature of chamber 10 is higher than the temperature inside the etch chamber 10.More particularly, the hot gas can be heated positioned at described
The cover board 14 at 10 top of etch chamber makes the temperature of the cover board 14 at 10 top of etch chamber be higher than the temperature inside the etch chamber 10
The temperature of degree, i.e., the cover board 14 at described 10 top of etch chamber is higher than the etching temperature in etching technics.It the advantage is that, utilize heat
The gas is heated cover board 14 of the heat transfer to 10 top of etch chamber of the hot gas in room 20, so that described by conduction
The temperature of the cover board 14 at 10 top of etch chamber is higher than the temperature inside the etch chamber 10, then etching liquid will not be in the etch chamber
It is condensed on the cover board 14 at 10 tops, is able to maintain the cleaning of form in etch chamber, and can be avoided the etching liquid drop drop of condensation
Fall in the defects of brought etching is uneven on sample 13.
Further, the top of the etch chamber 10 has double-layer cover plate, as shown in Figure 1, cover board 14 and cover board 15.It is described double
Floor cover board surrounds gas heating room 20.It the advantage is that, the double-layer cover plate is the structure that etch chamber 10 has in itself, benefit
It uses the existing structure to heat room 20 as gas, saves the expense of reforming equipment.
Please continue to refer to Fig. 1, in the present embodiment, the Wet-method etching device further includes a hot gas system 30.The heat
Gas system 30 includes a gas heater 31, a gas feeding duct 32 and a gas outlet duct 33.
31 heat gas of gas heater forms hot gas.For example, external air enters the gas heater
31, the gas heater 31 heats the air, forms the air of the drying of heat.Wherein, it can be heated by controlling the gas
The power of device 31 controls the temperature of hot gas, so that the temperature of the hot gas is higher than the temperature in the etch chamber 10, even if described
The temperature of hot gas is higher than the technological temperature of the etching technics.
The gas heater 31 is connect with one end of the gas feeding duct 32, the gas feeding duct 32 it is another
One end is connected to the air inlet 21 of gas heating room 20.The gas that the gas heater 31 heats is inputted through the gas
Pipeline 32 is input in gas heating room 20.Wherein, the flow direction of gas please refers to shown in Fig. 1 arrow.Further, in this reality
It applies in example, one end that the gas feeding duct 32 is connected to the air inlet 21 of gas heating room 20 is provided with air inlet spray
Mouth 321, hot gas spray into the gas through the nozzle of air supply 321 and heat room 20.
The gas outlet duct 33 is connected to the gas outlet 22 of gas heating room 20, in gas heating room 20
Hot gas exported through the gas outlet duct 33.The hot gas can enter external rings after the gas outlet duct 33 output
Border reenters the gas heater 31.
Further, as shown in Figure 1, in the present embodiment, the hot gas system 30 further includes that an air intake valve 34 and one goes out
Air valve 35.The air intake valve 34 is arranged on the gas feeding duct 32, for controlling the gas feeding duct 32
Open and close.The outlet valve 35 is arranged on the gas outlet duct 33, for controlling the gas output tube
Road 33 unlatches and closes.The air intake valve 34 and outlet valve 35 are the valve mechanism of this field routine, such as solenoid valve.
By controlling the opening degree of the air intake valve 34 and outlet valve 35, the gas feeding duct 32 and the gas can control
The flow of the hot gas of body output channel 33 makes the air pressure of the gas feeding duct 32 and the gas outlet duct 33 be less than institute
The air pressure in etch chamber 10 is stated, and then hot gas is avoided to enter in the etch chamber 10.
Further, as shown in Figure 1, in the present embodiment, the hot gas system 30 further includes a charge flow rate monitor 36
An and outlet flow monitor 37.The charge flow rate monitor 36 is connected to the gas feeding duct 32, for monitoring
The flow of the hot gas in gas feeding duct 32 is stated, the outlet flow monitor 37 is connected to the gas outlet duct 33,
For monitoring the flow of the hot gas in the gas outlet duct 33.Wherein, by the throughput monitor 36 with it is described go out
The comparison of throughput monitor 37 may determine that whether the hot gas system is revealed, and then supervise whether the hot gas system leaks
Gas enters in the etch chamber 10 to avoid hot gas；For example, if the throughput monitor 36 and the outlet flow monitor
The flow number of 37 displays is identical, then can be determined that the hot gas system is air tight, hot gas will not enter the etch chamber 10
It is interior；If the throughput monitor 36 is different from the flow number that the outlet flow monitor 37 is shown, then can be determined that
Hot gas system gas leakage needs to repair hot gas system, enters in the etch chamber 10 to avoid hot gas.
Further, as shown in Figure 1, the hot gas system 30 further includes an intake air temperature sensor 38.The intake air temperature
Sensor 38 is connected to the gas feeding duct 32, for monitoring the temperature of the hot gas in the gas feeding duct 32, into
And monitor the temperature of the hot gas in gas heating room 20, avoid the temperature of the hot gas in gas heating room 20 excessively high or
It is too low.Wherein, the intake air temperature sensor 38 measures the temperature of the hot gas in the gas feeding duct 32, and by the temperature
It is compared with set temperature, and then controls the power of the gas heater 31, to control the temperature of hot gas.For example, institute
State the temperature for the hot gas that intake air temperature sensor 38 measures in the gas feeding duct 32, and by the temperature and set temperature into
Row compares, if the temperature is higher than set temperature, then, which is passed to the gas and added by the intake air temperature sensor 38
Hot device 31, the gas heater 31 reduces its power, to reduce the temperature of hot gas；If the temperature is lower than set temperature, that
, which is passed to the gas heater 31 by the intake air temperature sensor 38, and the gas heater 31 increases it
Power, to increase the temperature of hot gas.
Further, as shown in Figure 1, the hot gas system 30 further includes a pneumatic filter 39, the pneumatic filter 39
It is arranged on the gas outlet duct 33, for filtering the gas being discharged from gas heating room 20.
Please continue to refer to Fig. 1, in the present embodiment, the Wet-method etching device further includes an etching liquid holding tank 40, carves
Lose liquid input channel 41, etching liquid discharge line 42 and etching liquid exhaust pipe 43.
The etching liquid holding tank 40 is located at except the etch chamber 10.The etching liquid holding tank 40 is for storing etching
Liquid.
One end of the etching liquid input channel 41 is connected to the etching liquid holding tank 40, and the other end and etch chamber 10 connect
It is logical, the etching liquid in the etching liquid holding tank 40 is sent to etch chamber 10.As shown in Figure 1, the etching liquid input pipe
Road 41 is connected to etching nozzle for liquid 11 and etching liquid inlet 16 respectively, so as to when being performed etching using different etching modes
Etching liquid can be sent to etch chamber 10.
Wherein, the Wet-method etching device can also be arranged on the etching liquid input channel 41 feed liquor filter 44 and
Liquid feeding pump 45.The feed liquor filter 44 is for filtering etching liquid, to guarantee the etching liquid for entering the etching nozzle for liquid 11
It is clean.Etching liquid in etching liquid holding tank 40 is pumped into the etching liquid input channel 41 by the liquid feeding pump 45.
One end of the etching liquid discharge line 42 is connected to the bottom of the etch chamber 10, the other end and the etching liquid
Holding tank 40 is connected to.In etch chamber 10, in etching process or etching technics is finished, and can accumulate quarter in 10 bottom of etch chamber
Liquid is lost, the etching liquid of accumulation can be emitted into etching liquid holding tank 40 by the etching liquid discharge line 42, in order to etching liquid
Recycle.
The etching liquid exhaust pipe 43 is connected to the etch chamber 10.In etching technics, etching liquid steam can be generated,
The etching liquid steam is emitted into exterior space by the etching liquid exhaust pipe 43, for example, the etching liquid steam passes through
The etching liquid exhaust pipe 43 is emitted into exterior space recyclable device (not being painted in attached drawing).Wherein, it is arranged in the etching liquid
Pneumatic filter 46 can be set in feed channel 43, for filtering etching liquid steam, etching liquid steam is through the pneumatic filter
It is discharged after 46 filterings.
Further, in other embodiments, the gas outlet 22 of gas heating room 20 can be arranged with the etching liquid
Feed channel 43 is connected to, and the hot gas is discharged through the etching liquid exhaust pipe 43.The gas output tube of the i.e. described hot gas system 30
Road 33 and the etching liquid exhaust pipe 43 are the same pipeline.Referring to Fig. 2, the gas outlet duct of the hot gas system 30
33 with the etching liquid exhaust pipe 43 be the same pipeline.
Further, please continue to refer to Fig. 1, the Wet-method etching device further includes a circulating pump 50, the circulating pump 50 with
The etching liquid holding tank 40 connects, and the inside for the etching liquid in the etching liquid holding tank 40 recycles.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a kind of Wet-method etching device, including an etch chamber, sample stage is provided in the etch chamber, which is characterized in that described
The top of etch chamber has a gas heating room being isolated with the etch chamber, and gas heating room has an air inlet and one
Gas outlet, hot gas enter from the air inlet, after flowing through gas heating room, are discharged from the gas outlet, in the gas
Heating is indoor, and the hot gas can heat the top of the etch chamber, and the head temperature of the etch chamber is made to be higher than the etching
The temperature in intracavitary portion.
2. Wet-method etching device according to claim 1, which is characterized in that the Wet-method etching device further includes a hot gas
System, the hot gas system include a gas heater, a gas feeding duct and a gas outlet duct, the gas heating
Device is used for heat gas, and the gas heater is connect with one end of the gas feeding duct, the gas feeding duct
The other end is connected to the air inlet of gas heating room, and the gas outlet of the gas outlet duct and gas heating room connects
Logical, the gas of the gas heater heating is input to the gas through the gas feeding duct and heats room, and through the gas
The output of body output channel.
3. Wet-method etching device according to claim 2, which is characterized in that the hot gas system further includes an air intake valve
And an outlet valve, the air intake valve are arranged on the gas feeding duct, the outlet valve is arranged in the gas
On output channel.
4. Wet-method etching device according to claim 2, which is characterized in that the hot gas system further includes a charge flow rate
Monitor and an outlet flow monitor, the charge flow rate monitor are connected to the gas feeding duct, the air-flow out
Amount monitor is connected to the gas outlet duct.
5. Wet-method etching device according to claim 2, which is characterized in that the hot gas system further includes an intake air temperature
Sensor, the intake air temperature sensor are connected to the gas feeding duct.
6. Wet-method etching device according to claim 2, which is characterized in that the gas feeding duct adds with the gas
One end of the air inlet connection in hot cell is provided with a nozzle of air supply, and hot gas sprays into the gas through the nozzle of air supply and heats room.
7. Wet-method etching device according to claim 1, which is characterized in that the top of the etch chamber has Double layer lid
Plate, the double-layer cover plate and the side plate that the double-layer cover plate two sides are arranged in surround gas heating room, and the hot gas can
Heat the double-layer cover plate.
8. Wet-method etching device according to claim 1, which is characterized in that the Wet-method etching device further includes at least one
A etching nozzle for liquid and an etching liquid inlet, the etching nozzle for liquid are arranged above the sample stage, for spraying etching
Liquid, etching liquid can enter the etch chamber by the etching liquid inlet.
9. Wet-method etching device according to claim 1, which is characterized in that the Wet-method etching device further includes an etching
Liquid holding tank, an etching liquid input channel, an etching liquid discharge line and an etching liquid exhaust pipe, the etching liquid holding tank
Except the etch chamber；One end of the etching liquid input channel is connected to the etching liquid holding tank, the other end and institute
Etch chamber connection is stated, the etching liquid in the etching liquid holding tank is sent to the etch chamber；The etching liquid discharge pipe
The one end in road is connected to the bottom of the etch chamber, and the other end is connected to the etching liquid holding tank, can be by the etch chamber
The etching liquid of interior accumulation is emitted into the etching liquid holding tank；The etching liquid exhaust pipe is connected to the etch chamber, can
By the etching liquid discharge of steam in the etch chamber to exterior space.
10. Wet-method etching device according to claim 9, which is characterized in that the gas outlet of gas heating room and institute
The connection of etching liquid exhaust pipe is stated, the hot gas is discharged through the etching liquid exhaust pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811019132.3A CN109244009A (en) | 2018-09-03 | 2018-09-03 | Wet-method etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811019132.3A CN109244009A (en) | 2018-09-03 | 2018-09-03 | Wet-method etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109244009A true CN109244009A (en) | 2019-01-18 |
Family
ID=65059993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811019132.3A Pending CN109244009A (en) | 2018-09-03 | 2018-09-03 | Wet-method etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109244009A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429053A (en) * | 2019-08-19 | 2019-11-08 | 江阴江化微电子材料股份有限公司 | A kind of wet etching equipment and wet etch process with removable cover |
| CN110634773A (en) * | 2019-08-29 | 2019-12-31 | 武汉华星光电半导体显示技术有限公司 | Wet etching equipment, control method thereof and storage medium |
| CN111146125A (en) * | 2020-01-02 | 2020-05-12 | 京东方科技集团股份有限公司 | Temperature control device and etching equipment |
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| US7138606B2 (en) * | 2002-03-05 | 2006-11-21 | Hitachi High-Technologies Corporation | Wafer processing method |
| CN204407298U (en) * | 2014-12-03 | 2015-06-17 | 上饶光电高科技有限公司 | A kind of covering plate structure improving etching groove dropping liquid |
| CN204857676U (en) * | 2015-07-28 | 2015-12-09 | 张家港国龙光伏科技有限公司 | Antidrip liquid sculpture capping board |
| CN105405798A (en) * | 2016-01-04 | 2016-03-16 | 京东方科技集团股份有限公司 | Etching apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7138606B2 (en) * | 2002-03-05 | 2006-11-21 | Hitachi High-Technologies Corporation | Wafer processing method |
| CN204407298U (en) * | 2014-12-03 | 2015-06-17 | 上饶光电高科技有限公司 | A kind of covering plate structure improving etching groove dropping liquid |
| CN204857676U (en) * | 2015-07-28 | 2015-12-09 | 张家港国龙光伏科技有限公司 | Antidrip liquid sculpture capping board |
| CN105405798A (en) * | 2016-01-04 | 2016-03-16 | 京东方科技集团股份有限公司 | Etching apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429053A (en) * | 2019-08-19 | 2019-11-08 | 江阴江化微电子材料股份有限公司 | A kind of wet etching equipment and wet etch process with removable cover |
| CN110634773A (en) * | 2019-08-29 | 2019-12-31 | 武汉华星光电半导体显示技术有限公司 | Wet etching equipment, control method thereof and storage medium |
| CN111146125A (en) * | 2020-01-02 | 2020-05-12 | 京东方科技集团股份有限公司 | Temperature control device and etching equipment |
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Application publication date: 20190118 |
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