JP2012204746A - Substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent processing failure of a substrate by restraining impurities deposited in processing liquid when the processing liquid is reused.SOLUTION: One upstream end of a second branch pipe 47 is connected to a third pipeline 33 at a portion 51 at a lower stream side position than a portion 45, at which a first branch pipe 41 is connected, and a downstream side of a second branch pipe 47 is connected to a first recovery tank 23. A control part turns a heater 35 and a drive pump 39 on while opening an on-off valve 43 and an on-off valve 49 and closing an on-off valve 53. Thereafter, the processing liquid heated by the heater 35 flows to the second branch pipe 47 from the third pipeline 33, and continues to be supplied to the first recovery tank 23. Therefore, the processing liquid stored in the first recovery tank 23 is warmed by the heated processing liquid, so that unnecessary objects are restrained from being deposited in the processing liquid without heightening viscosity of the processing liquid or accumulating the processing liquid in the first recovery tank 23.

Description

The present invention relates to a substrate processing apparatus for performing processing such as cleaning and etching on a substrate with a processing solution such as a chemical solution or pure water. Examples of the substrate to be processed include a semiconductor wafer, a substrate for a liquid crystal display device, a glass substrate for a plasma display, and an FED (Field Emission).
Display) substrate, optical disk substrate, magnetic disk substrate, magneto-optical disk substrate, photomask substrate, solar cell glass substrate, and the like.

  In the manufacturing process of a semiconductor device or a liquid crystal display device, a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display panel is subjected to processing such as cleaning and etching using a processing fluid such as a processing liquid or a processing gas. For such processing, a single-wafer type substrate processing apparatus that processes substrates one by one may be used. A single wafer processing apparatus includes a substrate holding mechanism for holding a substrate, a nozzle for supplying a processing liquid to the surface of the substrate, and a cup for holding the substrate holding member and the nozzle in the processing chamber. .

  In this single wafer type substrate processing apparatus, processing is performed on the surface of the substrate by supplying a processing fluid from the nozzle to the surface of the substrate. In order to prevent the atmosphere containing the processing liquid from leaking out of the cup, an exhaust hole for exhausting the atmosphere in the cup is formed in the bottom wall of the cup. Various configurations for reusing the processing liquid used for processing the surface of the substrate have been proposed (see, for example, Patent Document 1).

  A wafer cleaning apparatus described in Patent Document 1 includes a processing unit that processes a wafer, a supply nozzle that supplies a chemical solution such as ammonia overwater (APM) to the wafer in the processing unit, and a chemical solution that is used in the processing unit. A recovery circuit for recovering the liquid, a sub-storage tank for temporarily storing the chemical liquid recovered through the recovery circuit, a connection circuit for discharging the chemical liquid stored in the sub-storage tank from the sub-storage tank, and a sub-circuit via the connection circuit. The main storage tank which stores the chemical | medical solution discharged | emitted from the storage tank, and the supply circuit which supplies the chemical | medical solution stored in the main storage tank to a supply nozzle are provided. In this wafer cleaning apparatus, a circulation path for reusing the chemical solution is formed by the supply nozzle, the recovery circuit, the auxiliary storage tank, the connection circuit, the main storage tank, and the supply circuit.

JP 2009-218617 A

  In the above-described conventional wafer cleaning apparatus, the chemical solution that is used and reused in the processing unit is temporarily collected in the auxiliary storage tank. The chemical solution collected in the sub-storage tank is not subjected to any processing, and the chemical solution is supplied from the sub-storage tank to the main storage tank via the connection circuit. At this time, if the temperature of the chemical solution in the auxiliary storage tank decreases, depending on the type of the chemical solution, the viscosity of the chemical solution increases and the chemical solution may stay in the auxiliary storage tank. Due to the temperature drop of the chemical solution and the retention in the auxiliary storage tank, unnecessary substances may be deposited from the chemical solution.

In a conventional wafer cleaning apparatus, a heater is provided in a connection circuit, or a heater is provided in a small circulation circuit attached to a main storage tank to raise the temperature of the chemical solution to be used in the processing unit. However, once an unnecessary substance is deposited in the chemical solution in the auxiliary storage tank, even if the chemical solution is heated in the subsequent process, the unnecessary product is still deposited in the chemical solution, and the chemical solution containing the unwanted substance is fed from the supply nozzle to the wafer. Will be supplied. When a wafer is processed with a chemical solution containing such an unnecessary material, the intended processing is not performed on the wafer due to the unnecessary material, resulting in a processing failure.

  In addition, it is conceivable to provide a heating mechanism such as a heater in the sub-storage tank itself or around the sub-storage tank to constantly heat the chemical stored in the sub-storage tank. As a processing apparatus, there is a risk of becoming expensive.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus capable of suppressing the generation of impurities that precipitate in a processing solution as the processing solution is reused and preventing processing defects of the substrate.

  The invention described in claim 1 for achieving the above-described object has a supply mechanism for supplying a processing liquid to the substrate in a substrate processing apparatus for supplying a processing liquid to the substrate for processing. A substrate processing unit for processing a substrate with the supplied processing liquid, a first recovery unit for recovering the processing liquid processed in the substrate processing unit, and a processing liquid processed in the substrate processing unit for the first recovery unit A first pipe for supplying the first recovery pipe, one end of which is connected to the first recovery part, a second pipe for discharging the processing liquid in the first recovery part from the first recovery part, and the second pipe A second recovery part for recovering the processing liquid discharged via the second recovery part; a third pipe for supplying the processing liquid discharged from the second recovery part to the supply mechanism of the substrate processing part; A heater provided in the pipe for heating the treatment liquid flowing through the third pipe A first branch pipe connected to the downstream side of the heating mechanism of the third pipe and supplying the processing liquid flowing through the third pipe to the second recovery section; and the first branch pipe of the third pipe A second branch pipe connected to the downstream side from the position where the first pipe is connected, and supplying the processing liquid flowing through the third pipe to the first recovery section; and the second branch pipe of the third pipe is connected. A first on-off valve provided on the downstream side of the position, a second on-off valve provided on the first branch pipe, and a control means for controlling an on-off operation of the first on-off valve and the second on-off valve. It is characterized by providing.

  According to a second aspect of the present invention, in the substrate processing apparatus of the first aspect, a third on-off valve provided in the second branch pipe, and a detecting means for detecting a liquid level of the first recovery part The control means closes the third on-off valve when the detection means detects a value equal to or greater than a maximum reference value.

  According to a third aspect of the present invention, in the substrate processing apparatus according to the second aspect, the processing liquid is provided to the second piping and the processing liquid is supplied from the first recovery portion to the second recovery portion through the second piping. A drive pump is further provided, and when the detection means detects a minimum reference value or more, the control means operates the drive pump.

  The invention according to claim 4 is the substrate processing apparatus according to claim 2 or 3, further comprising a fourth on-off valve provided in the first pipe, wherein the fourth on-off valve is opened, And when the said detection means has not detected more than the maximum reference value, the said control means opens the said 3rd on-off valve, It is characterized by the above-mentioned.

  According to the substrate processing apparatus of the present invention, the second pipe connected to the downstream side of the position where the first branch pipe of the third pipe is connected, and supplies the processing liquid flowing through the third pipe to the first recovery section. Since the branch pipe is provided, the processing liquid heated by the heating mechanism is supplied to the first recovery unit. As a result, in the substrate processing apparatus according to the present invention, it is suppressed that the processing liquid stays in the first recovery unit and unnecessary substances are deposited from the processing liquid. There is an effect that it is possible to prevent the occurrence of processing defects on the substrate.

It is sectional drawing which shows notionally the structure of the substrate processing apparatus which concerns on embodiment of this invention. It is a block diagram which shows the control system of the substrate processing apparatus which concerns on embodiment of this invention. It is a flowchart which shows a series of processing operation | movement of the substrate processing apparatus which concerns on embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention.

  The substrate processing apparatus includes a substrate processing unit 1 that performs predetermined processing such as cleaning, etching, and drying on a wafer W that is a kind of substrate. The substrate processing unit 1 is a single wafer processing apparatus that processes wafers W one by one.

  The substrate processing unit 1 includes a holding mechanism 3 that holds the wafer W in a horizontal posture. The holding of the wafer W by the holding mechanism 3 is a mechanical chuck that holds a plurality of positions at the end of the wafer W. One end side of the rotating shaft 5 is connected to the lower side of the holding mechanism 3. A motor 7 is connected to the other end side of the rotating shaft 5. By driving the motor 7, the horizontally oriented wafer W held by the holding mechanism 3 rotates at a predetermined number of rotations.

A supply nozzle 9 for supplying a processing liquid to the surface of the wafer W is provided above the wafer W held by the holding mechanism 3. The supply nozzle 9 corresponds to the supply mechanism of the present invention. A cylindrical collection cup 11 is disposed around the wafer W held by the holding mechanism 3. The processing liquid supplied to the surface of the wafer W from the supply nozzle 9 scatters around as the wafer W rotates and is recovered by the recovery cup 11. A discharge port 13 is provided at the bottom of the substrate processing unit 1, and the processing liquid recovered by the recovery cup 11 is discharged out of the substrate processing unit 1 from the discharge port 13. In addition, as a processing liquid used in this embodiment, a liquid whose viscosity increases when the temperature of the processing liquid decreases is considered, for example, ST250 (manufactured by ATMI), phosphoric acid (H ₃ PO ₄ ). Etc.

  One end on the upstream side of the discharge pipe 15 is connected to the discharge port 13. In the discharge pipe 15, two pipes, that is, a waste pipe 17 and a first pipe 19 are connected in a downstream portion 16. An on-off valve 21 is provided in the middle of the waste liquid pipe 17.

  The upstream side of the first pipe 19 is connected to the discharge pipe 15 at the site 16, and the downstream side is connected to the first recovery tank 23. An opening / closing valve 25 corresponding to the fourth opening / closing valve of the present invention is provided in the middle of the first pipe 19. The on-off valve 21 and the on-off valve 25 can be switched between open and close operations by a control unit 55 (see FIG. 2). When the on-off valve 21 is opened and the on-off valve 25 is closed, the processing liquid in the substrate processing unit 1 is discharged out of the substrate processing apparatus through the discharge port 13, the discharge pipe 15, the part 16 and the waste liquid pipe 17. . On the other hand, when the on-off valve 25 is opened and the on-off valve 21 is closed, the processing liquid in the substrate processing unit 1 is recovered in the first recovery tank 23 via the discharge port 13, the discharge pipe 15 and the first pipe 19. The The first recovery tank 23 corresponds to the first recovery unit of the present invention.

On the side surface of the first recovery tank 23, a level sensor 27 that detects the liquid level of the processing liquid recovered in the first recovery tank 23 is provided. The level sensor 27 displays a minimum reference value A and a maximum reference value B. The minimum reference value A is a reference liquid level at which the control unit 55 controls the driving of a drive pump 32 (described later), and the maximum reference value B is a reference liquid level that controls the opening / closing of the on-off valve 49. As shown in FIG. 1, the maximum reference value B is set higher than the minimum reference value A. The level sensor 27 corresponds to the detection means of the present invention.

  A discharge port (not shown) is formed at the bottom of the first recovery tank 23. When the processing liquid stored in the first recovery tank 23 is discarded from the first recovery tank 23, the discharge port is opened and the processing liquid is discharged from the first recovery tank 23.

  One end on the upstream side of the second pipe 29 is connected to the lower part of the side surface of the first recovery tank 23. A second recovery tank 31 is connected to the downstream side of the second pipe 29. A drive pump 32 corresponding to the drive pump of the present invention is provided in the middle of the second pipe 29. When the drive pump 32 is driven by the control from the control unit 55, it is stored in the first recovery tank 23. The processing liquid is supplied to the second recovery tank 31 via the second pipe 29. The second collection tank 31 corresponds to the second collection unit of the present invention.

  Similar to the first recovery tank 23, a discharge port (not shown) is formed at the bottom of the second recovery tank 31. When the processing liquid stored in the second recovery tank 31 is discarded from the second recovery tank 31, the discharge port is opened and the processing liquid is discharged from the second recovery tank 31.

  One end on the upstream side of the third pipe 33 is connected to the lower part of the side surface of the second recovery tank 31. The downstream side of the third pipe 33 is connected to the supply nozzle 9 of the substrate processing unit 1. In order to reuse the processing liquid, the discharge port 13, the discharge pipe 15, the first pipe 19, the first recovery tank 23, the second pipe 29, the second recovery tank 31, and the third pipe 33 of the substrate processing unit 1 A circulation path for supplying the processing liquid once discharged from the substrate processing unit 1 to the substrate processing unit 1 again is configured.

  In the middle of the third pipe 33, a heater 35, a temperature sensor 37, and a drive pump 39 are provided in this order from the upstream side. The heater 35 heats the processing liquid flowing through the third pipe 33. The temperature sensor 37 measures the temperature of the processing liquid heated by the heater 35. When the drive pump 39 is driven by the control from the control unit 55, the processing liquid stored in the second recovery tank 31 is supplied to the supply nozzle 9 side via the third pipe 33. The heater 35 corresponds to the heating mechanism of the present invention.

  One end on the upstream side of the first branch pipe 41 is connected to a portion 45 on the downstream side of the drive pump 39 in the third pipe 33. On the other hand, the downstream side of the first branch pipe 41 is connected to the second recovery tank 31. An opening / closing valve 43 is provided in the middle of the first branch pipe 41. When the on-off valve 43 is opened by control from the control unit 55, the treatment liquid once discharged from the second recovery tank 31 to the third pipe 33 is heated by the heater 35, and the third pipe 33 and the first branch pipe 41 are heated. To the second recovery tank 31. The on-off valve 43 corresponds to the second on-off valve of the present invention.

  One end of the second branch pipe 47 on the upstream side is connected to a part 51 at a position downstream of the part 45 to which the first branch pipe 41 is connected in the third pipe 33. The downstream side of the second branch pipe 47 is connected to the first recovery tank 23. An on-off valve 49 is provided in the middle of the second branch pipe 47. When the on-off valve 49 is opened by the control from the control unit 55, the processing liquid flowing through the third pipe 33 is collected in the first collection tank 23 via the second branch pipe 47. The on-off valve 49 corresponds to the third on-off valve of the present invention.

  An on-off valve 53 is provided on the downstream side of the portion 51 to which the second branch pipe 47 is connected in the third pipe 33. When the on-off valve 53 is opened by the control from the control unit 55, the processing liquid stored in the second recovery tank 31 is supplied to the supply nozzle 9 through the third pipe 33, and in the substrate processing unit 1, Processing such as wafer cleaning is performed.

  FIG. 2 is a block diagram showing a control system of the substrate processing apparatus according to the embodiment of the present invention. The control unit 55 is connected to the motor 7, the on-off valve 21, the on-off valve 25, the level sensor 27, the drive pump 32, the heater 35, the temperature sensor 37, the drive pump 39, the on-off valve 43, the on-off valve 49, and the on-off valve 53. And controls the operation of each drive system. The control unit 55 corresponds to the control means of the present invention.

  The controller 55 is linked to the on-off valve 21 and the on-off valve 25 so that the on-off valve 25 is closed when the on-off valve 21 is opened and the on-off valve 25 is opened when the on-off valve 21 is closed. It is controlled with sex. The controller 55 controls the on-off valve 25 and the on-off valve 49 so as to open when the on-off valve 25 is opened. Further, the control unit 55 controls the level sensor 27 and the on-off valve 49 so that the on-off valve 49 is closed so that the on-off valve 49 is closed when the level sensor 27 detects the maximum reference value B or more. Yes. In addition, the control unit 55 controls the level sensor 27 and the drive pump 32 so as to be linked so that the drive pump 32 is driven when the level sensor 27 detects the minimum reference value A or more. . Further, the controller 55 closes the on-off valve 43 and the on-off valve 53 so that the on-off valve 53 is closed when the on-off valve 43 is opened and the on-off valve 53 is opened when the on-off valve 43 is closed. It has control.

  Next, the processing operation of the substrate processing apparatus according to the embodiment of the present invention will be described. FIG. 3 is a flowchart showing the processing operation of the substrate processing apparatus according to the embodiment of the present invention. This processing operation is based on the flow of processing liquid to be reused.

  First, in the substrate processing unit 1, after the processing such as cleaning and etching of the wafer W is completed, the processing liquid used in this processing is discharged from the discharge port 13 (step S1). The processing liquid discharged from the discharge port 13 flows from the discharge port 13 to the discharge pipe 15. Next, the control unit 55 determines whether to discard or reuse the processing liquid (step S2). When it is determined in step S2 that the processing liquid is to be discarded (not reused), the control unit 55 opens the on-off valve 21 and controls the on-off valve 25 to be closed (step S3). When the on-off valve 21 is opened, the processing liquid in the substrate processing unit 1 is discharged out of the substrate processing apparatus through the discharge port 13, the discharge pipe 15, and the waste liquid pipe 17, and the waste liquid processing is completed.

  On the other hand, when it is determined in step S2 that the processing liquid is reused, the control unit 55 closes the on-off valve 21 and opens the on-off valve 25 (step S4). When the opening / closing valve 25 is opened by the control unit 55, the processing liquid in the substrate processing unit 1 is once recovered into the first recovery tank 23 via the discharge port 13, the discharge pipe 15 and the first pipe 19. The controller 55 opens the on-off valve 49 in conjunction with opening the on-off valve 25.

  Next, it is determined whether or not the liquid level of the processing liquid stored in the first recovery tank 23 has reached the minimum reference value A of the level sensor 27 (step S5). If it is determined in step S5 that the liquid level of the processing liquid in the first recovery tank 23 has reached the minimum reference value A of the level sensor 27, the control is performed in conjunction with the detection by the level sensor 27. The part 55 operates the drive pump 32 (step S6). When the drive pump 32 operates, the processing liquid stored in the first recovery tank 23 is supplied to the second recovery tank 31 via the second pipe 29, and the processing liquid is stored in the second recovery tank 31.

Next, the control unit 55 opens the on-off valve 43 and the on-off valve 49, and turns on the heater 35 and the drive pump 39 with the on-off valve 53 closed (step S7). By driving the drive pump 39, the processing liquid stored in the second recovery tank 31 is circulated so as to be supplied again to the second recovery tank 31 via the third pipe 33 and the first branch pipe 41, and the heater 35. Due to this heating, the processing liquid flowing through the third pipe 33 is heated. At this time, the on-off valve 49 is open, and the on-off valve 53
Since is closed, the processing liquid heated by the heater 35 flows from the third pipe 33 to the second branch pipe 47 and is also supplied to the first recovery tank 23.

  While the processing liquid is circulated in the circulation path formed by the second recovery tank 31, the third pipe 33, and the first branch pipe 41, the temperature sensor 37 determines whether or not the processing liquid has reached a predetermined temperature. (Step S8). When it is determined in step S8 that the processing liquid has reached a predetermined temperature, the control unit 55 determines whether or not the wafer W should be processed with the processing liquid in the substrate processing unit 1 (step S9). When it is determined in step S9 that the wafer W should be processed with the processing liquid, the control unit 55 opens the on-off valve 53 and closes the on-off valve 43 (step S10). When the on-off valve 53 is opened, the supply nozzle 9 supplies the processing liquid stored in the second recovery tank 31 to the surface of the wafer W held by the holding mechanism 3. Thus, processing such as cleaning of the wafer W is performed with the processing liquid for a predetermined time (step S11).

  In step S10, since the control unit 55 closes the on-off valve 43, the processing liquid stored in the second recovery tank 31 is again supplied to the second recovery tank via the third pipe 33 and the first branch pipe 41. The circulation of the processing liquid as supplied to 31 is stopped. In addition, since the on-off valve 49 is in an open state, the processing liquid heated by the heater 35 flows from the third pipe 33 to the second branch pipe 47 and is supplied to the first recovery tank 23 after step S7. continuing. When the liquid level of the processing liquid stored in the first recovery tank 23 reaches the maximum reference value B of the level sensor 27, the control unit 55 closes the on-off valve 49.

  When the processing of the wafer W is completed, the control unit 55 closes the open / close valve 53 and opens the open / close valve 43 (step S12). Subsequently, each mechanism that has been operating in the above-described steps is stopped. Specifically, the control unit 55 turns off each of the drive pump 32, the heater 35, and the drive pump 39 (step S13). Subsequently, the process proceeds to step S3 described above. When the on-off valve 21 is opened, the processing liquid in the substrate processing unit 1 is discharged out of the substrate processing apparatus via the discharge pipe 15 and the waste liquid pipe 17, and the waste liquid processing is finished. After the processing with the processing liquid on the wafer W is completed, the wafer W is processed with pure water, but a series of processing operations relating to the flow of the processing liquid to be reused is completed.

  In the embodiment of the present invention, the upstream end of the second branch pipe 47 is connected to a part 51 at a position downstream of the part 45 to which the first branch pipe 41 is connected in the third pipe 33. The downstream side of the second branch pipe 47 is connected to the first recovery tank 23. The controller 55 is heated by the heater 35 after step S7 in which the heater 35 and the drive pump 39 are turned on with the on-off valve 43 and the on-off valve 49 open and the on-off valve 53 closed. The processing liquid flows from the third pipe 33 to the second branch pipe 47 and continues to be supplied to the first recovery tank 23. As a result, since the processing liquid stored in the first recovery tank 23 is warmed by the heated processing liquid, the viscosity of the processing liquid does not increase and the processing liquid does not stay in the first recovery tank 23. , It is possible to suppress the deposition of unnecessary substances in the treatment liquid. As a result, when the processing liquid is reused using the circulation path, it is possible to prevent a substrate processing failure caused by an unnecessary material in the substrate processing unit 1.

  One end on the upstream side of the second branch pipe 47 is connected to the third pipe 33, and the downstream side of the second branch pipe 47 is only connected to the first recovery tank 23. It is possible to prevent processing defects.

In the embodiment of the present invention, when the liquid level of the processing liquid stored in the first recovery tank 23 reaches the maximum reference value B of the level sensor 27, the control unit 55 controls the on-off valve 49. Since the control is performed so as to be closed, the processing liquid does not overflow into the first recovery tank 23, and the amount of the processing liquid stored in the first recovery tank 23 can be adjusted appropriately.

  In the embodiment of the present invention, when the liquid level of the processing liquid in the first recovery tank 23 reaches the minimum reference value A of the level sensor 27, the control unit is linked with the detection by the level sensor 27. 55, because the drive pump 32 is operated, the processing liquid can be smoothly supplied from the first recovery tank 23 to the second recovery tank 31. Furthermore, the amount of the processing liquid stored in the first recovery tank 23 can be appropriately adjusted by the control with the interlocking between the minimum reference value A of the level sensor 27 and the drive pump 32 by the control unit 55.

  In the embodiment of the present invention, the control unit 55 opens the on-off valve 49 in conjunction with opening the on-off valve 25, so that the processing liquid is reused using the circulation path. In this case, the always heated processing liquid can be supplied from the third pipe 33 to the second branch pipe 47 and supplied to the first recovery tank 23.

  Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications can be made within the scope of the claims. In this embodiment, the single-wafer type substrate processing apparatus that processes the wafers W one by one in the substrate processing unit 1 has been described. It can also be applied to the substrate cleaning apparatus.

  Further, in this embodiment, the level sensor 27 as the detection means has been described as a single sensor, but a plurality of level sensors are provided, and the maximum reference value and the minimum reference value are set in a form corresponding to each level sensor. You may do it.

DESCRIPTION OF SYMBOLS 1 Substrate processing part 9 Supply nozzle 16 Site | part 15 Discharge pipe 19 1st piping 23 1st collection tank 25 On-off valve 27 Level sensor 29 2nd piping 31 2nd collection tank 33 3rd piping 35 Heater 37 Temperature sensor 41 1st branch pipe 43 On-off valve 45 Part 47 Second branch pipe 49 On-off valve 51 Part 53 On-off valve W Wafer

Claims (4)

In a substrate processing apparatus that performs processing by supplying a processing liquid to a substrate,
A substrate processing unit having a supply mechanism for supplying a processing liquid to the substrate, and processing the substrate with the processing liquid supplied from the supply mechanism;
A first recovery unit for recovering the processing liquid processed in the substrate processing unit; a first pipe for supplying the processing liquid processed in the substrate processing unit to the first recovery unit; and one end side of the first recovery unit A second pipe for discharging the processing liquid in the first recovery part from the first recovery part;
A second recovery part for recovering the processing liquid discharged through the second pipe; a third pipe for supplying the processing liquid discharged from the second recovery part to the supply mechanism of the substrate processing part;
A heating mechanism that is provided in the third pipe and heats the treatment liquid flowing through the third pipe;
A first branch pipe connected to the downstream side of the heating mechanism of the third pipe and supplying a treatment liquid flowing through the third pipe to the second recovery section;
A second branch pipe connected to the downstream side of the position where the first branch pipe of the third pipe is connected, and supplying the treatment liquid flowing through the third pipe to the first recovery section;
A first on-off valve provided on the downstream side of the position where the second branch pipe of the third pipe is connected;
A second on-off valve provided in the first branch pipe;
A substrate processing apparatus comprising: control means for controlling an opening / closing operation of the first opening / closing valve and the second opening / closing valve. The substrate processing apparatus according to claim 1,
A third on-off valve provided in the second branch pipe;
Detecting means for detecting the liquid level of the first recovery unit;
The substrate processing apparatus according to claim 1, wherein the control unit closes the third on-off valve when the detection unit detects a value equal to or greater than a maximum reference value. The substrate processing apparatus according to claim 2,
A drive pump provided in the second pipe and supplying a processing liquid from the first recovery section to the second recovery section through the second pipe;
The substrate processing apparatus according to claim 1, wherein when the detection unit detects a minimum reference value or more, the control unit operates the drive pump. In the substrate processing apparatus of Claim 2 or Claim 3,
A fourth on-off valve provided in the first pipe;
The substrate processing apparatus, wherein the control means opens the third on-off valve when the fourth on-off valve is open and the detection means does not detect a maximum reference value or more.

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