WO2016080729A1 - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
WO2016080729A1
WO2016080729A1 PCT/KR2015/012337 KR2015012337W WO2016080729A1 WO 2016080729 A1 WO2016080729 A1 WO 2016080729A1 KR 2015012337 W KR2015012337 W KR 2015012337W WO 2016080729 A1 WO2016080729 A1 WO 2016080729A1
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WO
WIPO (PCT)
Prior art keywords
chamber
substrate processing
gas
wall
temperature
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PCT/KR2015/012337
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French (fr)
Korean (ko)
Inventor
이병일
박경완
강호영
박준규
Original Assignee
주식회사 테라세미콘
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Application filed by 주식회사 테라세미콘 filed Critical 주식회사 테라세미콘
Priority to CN201580072720.1A priority Critical patent/CN107210245B/en
Publication of WO2016080729A1 publication Critical patent/WO2016080729A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

Definitions

  • the present invention relates to a substrate processing apparatus. More specifically, the substrate having a temperature controller for controlling the temperature of the chamber wall, the substrate capable of maintaining the temperature of the inner wall of the chamber at a predetermined temperature so that the substrate processing gas or volatiles do not condense on the inner wall of the chamber It relates to a processing device.
  • a large amount of gas may be supplied and discharged into a chamber in which a substrate is processed.
  • the gas may be supplied to the chamber and discharged from the chamber to the outside for the purpose of forming a thin film on the substrate, forming a pattern on the thin film on the substrate, or ventilating the atmosphere inside the chamber.
  • the chamber inner wall may be contaminated from gas supplied into the chamber or gas volatilized from the substrate during substrate processing.
  • the inside of the chamber needs to maintain a predetermined process temperature and process pressure.
  • a phenomenon in which the gas condenses on the inner wall of the chamber may occur due to the temperature and pressure difference between the outside of the chamber and the inside of the chamber.
  • the condensed gas may further contaminate the chamber inner wall by repeating evaporation and condensation in a repeated substrate processing process, reacting with gases of other chemical constituents, or altering under certain temperature conditions.
  • the conventional substrate processing apparatus has a problem that the contaminated material of the inner wall of the chamber re-evaporates during subsequent substrate processing and flows onto the substrate to contaminate the substrate, thereby degrading the reliability of the product and lowering the yield.
  • the conventional substrate processing apparatus has a problem that the problem of having to clean the contaminated material on the chamber inner wall or replace the chamber wall itself, there is a problem that the production cost of the product is increased.
  • the present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide a substrate processing apparatus capable of maintaining the chamber inner wall at a predetermined temperature so that gas does not condense on the chamber inner wall.
  • a substrate processing apparatus comprising: a gas inlet for supplying a substrate processing gas into the chamber; A gas outlet for discharging the substrate processing gas in the chamber to the outside; A heater disposed in the chamber and heating the inside of the chamber; And a temperature controller disposed on an outer surface of the chamber and controlling a temperature of the chamber wall, wherein the temperature controller controls the temperature of the inner wall of the chamber to 50 ° C. to prevent the material from condensing on the inner wall of the chamber. It is characterized by maintaining at 250 °C.
  • the volatile material condensation prevention method in the substrate processing apparatus, so that the material on the substrate vaporized or dried in the chamber is not condensed on the inner wall of the chamber,
  • the temperature controller for controlling the temperature of the chamber wall is characterized in that to maintain the temperature of the inner wall of the chamber at 50 °C to 250 °C.
  • the present invention has the effect of increasing the reliability and yield of the product by keeping the chamber inner wall free of contamination.
  • FIG. 1 is a perspective view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a front sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
  • FIG 3 is a side cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram illustrating an operation of a temperature controller according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view illustrating a gas inlet and a gas outlet according to an embodiment of the present invention.
  • FIG. 6 is a perspective view illustrating a form in which a material discharge hole is formed in a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate may be understood as including all substrates such as substrates used in display devices such as LEDs and LCDs, semiconductor substrates, solar cell substrates, and the like, and preferably used in flexible display devices. It can be understood to mean a flexible substrate.
  • the substrate processing process may be understood to include a deposition process, a heat treatment process, and the like, and preferably, a flexible substrate is formed on a non-flexible substrate and a pattern is formed on the flexible substrate. It may be understood to mean a process such as separating a flexible substrate.
  • FIG. 1 is a perspective view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention
  • Figure 2 is a front sectional view showing a substrate processing apparatus according to an embodiment of the present invention
  • Figure 3 is an embodiment of the present invention Side cross-sectional view showing a substrate processing apparatus according to the above.
  • the substrate processing apparatus includes a main body 100, a heater 200, a gas inlet 300, a gas outlet 400, and a temperature controller 500. It may include.
  • the main body 100 constitutes a chamber 101 which is an enclosed space in which the substrate 10 is loaded and processed therein.
  • the material of the body 100 may be at least one of quartz, stainless steel, aluminum, aluminum, graphite, silicon carbide, or aluminum oxide.
  • a plurality of substrates 10 may be disposed in the chamber 101.
  • the plurality of substrates 10 may be disposed to have a predetermined interval, and may be supported by the substrate holder 11 (see FIG. 2) or may be disposed in the chamber 101 by being seated in a boat (not shown).
  • An entrance 115 which is a passage through which the substrate 10 is loaded / unloaded, may be formed on one surface (eg, the front surface) of the main body 100.
  • the doorway 115 may be formed only on one surface (for example, the front surface) of the main body 100, and may be formed on the opposite surface (for example, the rear surface).
  • the door 110 may be installed on one surface of the main body 100 (that is, the surface on which the entrance 115 is formed).
  • the door may be slidably installed in the front, rear, left, and right directions.
  • the door 110 may open and close the doorway 115, and of course, the chamber 101 may be opened or closed depending on whether the doorway 115 is opened or closed.
  • a sealing member such as an O-ring (not shown) is formed between the door 110 and the surface on which the door 115 of the main body 100 is formed so that the door 115 is completely sealed by the door 110. May be interposed.
  • the reinforcing rib 120 may be coupled to the outer surface of the main body 100.
  • the main body 100 may be damaged or deformed under the influence of strong pressure or high temperature in the process. Therefore, by combining the reinforcing rib 120 on the outer surface of the main body 100 can improve the durability of the main body 100. If necessary, the reinforcing rib 120 may be coupled only to a specific outer surface or a portion of the outer surface.
  • the heater 200 forms a substrate processing atmosphere by heating the inside of the chamber 101 and prevents heat loss inside the main heater 210 and the chamber 101 which directly serves to heat the substrate 10.
  • the sub heater 220 may be included.
  • the main heater 210 may be disposed at regular intervals in a direction perpendicular to the loading / unloading direction of the substrate 10, and may be disposed at regular intervals vertically along the stacking direction of the substrate 10. have.
  • the sub heater 220 may be disposed at regular intervals vertically along the stacking direction of the substrate 10 on the inner wall of the chamber 101 in a direction parallel to the loading / unloading direction of the substrate 10.
  • the main heater 210 may include a plurality of heating elements 211 and terminals 212 provided at both ends of each of the heating elements 211, and the sub heater 220 may also include the plurality of heating elements 221 and each of the heating elements 211. It may include a terminal 222 provided at both ends of the heating element (221).
  • the number of the heating elements 211 and 221 may be variously changed according to the size of the body 100, the size and the number of the substrate 10.
  • the heating elements 211 and 221 may have a bar shape communicating from one side of the chamber 101 to the other side of the chamber 101, and may have a shape in which a heating material is inserted into the quartz tube.
  • the heating element 211 of the main heater 210 may communicate from the left side to the right side of the chamber 101, and the heating element 221 of the sub heater 220 may include the chamber 101 except for the entrance 115. Can be communicated from front to back.
  • the terminals 212 and 222 may receive power from an external power source (not shown) to generate heat in the heating elements 211 and 221.
  • the entire surface of the substrate 10 may be uniformly heated by the heaters 200 disposed on the upper and lower portions, there is an advantage in that the reliability of the substrate processing process is improved.
  • the gas inlet 300 is connected to an outer one side (eg, left side) of the chamber 101 (or the main body 100), and the gas outlet 400 is connected to the chamber. It may be connected to the other external side [eg, the right side] of the 101 (or the main body 100).
  • the gas inlet 300 may provide a passage for supplying the substrate processing gas into the chamber 101.
  • the gas inlet 300 is connected to a gas storage unit (not shown), and a plurality of gas inlet pipes 310 are formed to have a constant vertically perpendicular to the gas supply pipe 320 and the gas supply pipe 320 supplied with the substrate processing gas. ) May be included.
  • the gas inlet pipe 310 may be connected to the inside of the chamber 101 through the main body 100, and the substrate processing gas may flow through the gas inlet hole 311 formed at the end of the gas inlet pipe 310. It can be supplied internally.
  • the gas outlet 400 may provide a passage for discharging the substrate processing gas inside the chamber 101 to the outside.
  • the gas outlet 400 is connected to an external gas discharge facility (not shown), and a plurality of gas outlet pipes 420 and the gas discharge pipes 420 are formed to have a predetermined interval perpendicular to the gas discharge pipe 420 to discharge the substrate processing gas. It may include a gas outlet pipe 410.
  • the gas outlet pipe 410 may be connected to the inside of the chamber 101 through the main body 100, and the gas may flow through the gas outlet hole 411 formed at an end of the gas outlet pipe 410. ) It can be discharged from inside to outside.
  • the gas inlet hole 311 (or the gas inlet pipe 310) and the gas outlet hole 411 (or the gas outlet pipe 410) are used when the plurality of substrates 10 are accommodated in the chamber 101.
  • the substrate 10 disposed in the chamber 101 and a substrate adjacent to the upper or lower portion thereof It is preferred to be located at each interval between 10).
  • the substrate processing apparatus of the present invention is characterized in that it comprises a temperature controller 500 disposed on the outer surface of the chamber 101 to control the temperature of the chamber wall.
  • the temperature controller 500 may be disposed adjacent to the outer surface of the chamber wall or spaced apart by a predetermined distance, and may be arranged in a zig-zag manner in which a pipe or the like through which fruit or a refrigerant may flow may be zigzag. Do.
  • the temperature controller 500 sets an inner wall temperature of the chamber 101 such that materials volatilized on the substrate 10, materials supplied to and discharged from the chamber 101, and the like are not condensed on the inner wall of the chamber 101 during the substrate processing process. It can serve to maintain the temperature of.
  • the inner wall temperature of the chamber 101 may be maintained at 50 ° C to 250 ° C.
  • the temperature controller 500 may be disposed on the upper side 510, the left and right sides 520a and 520b, the lower side 530, and the front and rear doors 540 and 550 of the chamber wall.
  • the arrangement of the temperature controller 500 may be omitted on some outer surface of the chamber 101 within the range achieved for the purpose of the present invention to maintain the inner wall temperature at a predetermined temperature.
  • the substrate processing apparatus of the present invention processes the flexible substrate 10 used in the flexible display device
  • the function of the temperature controller 500 in the substrate processing process will be described in detail below.
  • the manufacturing process of the flexible substrate 10 may be divided into a process of forming a flexible substrate on the non-flexible substrate, a process of forming a pattern on the flexible substrate, and a process of separating the flexible substrate from the non-flexible substrate.
  • the flexible substrate is formed by forming a film made of polyimide or the like on a non-flexible substrate such as glass or plastic, followed by heat treatment and curing, and then injecting a solvent into a material adhering the non-flexible substrate and the flexible substrate to weaken adhesive force.
  • the flexible substrate may be separated from the non-flexible substrate by completing the adhesive material or by decomposing the adhesive material.
  • the solvent component included in the flexible substrate may be volatilized and discharged to the outside of the chamber 101 through the gas outlet 400, but outside the chamber 101 and the chamber Due to the difference in temperature and pressure inside the predetermined portion of the inner wall of the chamber 101, the temperature of the inner wall of the chamber 101 may be formed low enough to condense the above substances. As a result, a solvent component condensed on the inner wall of the chamber 101 may contaminate the chamber 101 or may contaminate the substrate 10 in a subsequent process.
  • the substrate processing apparatus of the present invention does not condense gas inside the chamber 101 so that the gas in the chamber 101 including the solvent can be discharged to the outside in the gas state without condensing on the inner wall of the chamber 101. It is characterized in that it is maintained so as not to.
  • the material included on the substrate 10 may be a volatile material such as a solvent and may be a material vaporized at 50 ° C to 250 ° C.
  • a material may preferably be n-methyl-2-pyrrolidone (NMP), or may be a volatile material such as IPA, acetone, or propylene glycol monomethyl ether acetate (PGMEA).
  • the temperature of the inner wall of the chamber 101 must be maintained at a temperature at which the materials can vaporize.
  • the chamber wall heating module 600 and the chamber wall cooling module 700 may be connected to the temperature controller 500.
  • FIG. 4 is a schematic diagram illustrating an operation of a temperature controller 500 according to an embodiment of the present invention.
  • a 3 way valve may be installed in the middle of the temperature controller 500, the chamber wall heating module 600, and the chamber wall cooling module 700.
  • the chamber wall heating module 600 may be understood as a device for heating and supplying cooling water, including a heat exchanger capable of temporarily raising the temperature of process cooling water (PCW), and the chamber wall cooling module 700.
  • PCW process cooling water
  • the substrate processing temperature inside the chamber 101 may be gradually increased to 80 ° C. to 150 ° C., 150 ° C. to 250 ° C., 250 ° C. to 350 ° C., and the like. Since the substrate processing temperature inside the chamber 101 is about 80 ° C. at the beginning of substrate processing, the temperature of the inner wall of the chamber 101 may be lower than 60 ° C. to 80 ° C., and the volatile material having an evaporation band of about 80 ° C. to 150 ° C. NMP, one of which is likely to condense on the inner wall of the chamber 101.
  • the temperature of the chamber wall is the minimum evaporation zone of NMP It can maintain at 80 degreeC or more.
  • the chamber wall heating module 600 is operated.
  • the 3-way valve 3WV is turned on.
  • the substrate processing temperature in the chamber 101 exceeds 300 °C, even if the coolant is not supplied to the temperature controller 500, it is natural that the temperature of the chamber wall is 80 °C or more, the temperature of the chamber wall is NMP If it exceeds the evaporation zone of 80 ⁇ 150 ° C may cause problems of the chamber wall distortion, breakage, it is necessary to properly supply the cooling water from the chamber wall cooling module 700 to the temperature controller 500.
  • the chamber wall heating module 600 is operated.
  • the chamber wall cooling module 700 is operated. By operating the, the temperature of the inner wall of the chamber 101 can be maintained at 50 °C to 250 °C.
  • the substrate processing apparatus of the present invention includes a temperature controller 500 to maintain the inner wall of the chamber 101 at a predetermined temperature (that is, the evaporation temperature of the gas) so that the gas does not condense on the inner wall of the chamber 101.
  • a predetermined temperature that is, the evaporation temperature of the gas
  • the substrate processing apparatus of the present invention may further include means for discharging the condensed gas.
  • means for discharging the condensed gas may be further included.
  • FIG. 5 is a cross-sectional view illustrating a gas inlet 300 and a gas outlet 400 according to an embodiment of the present invention.
  • FIG. 5A illustrates a gas inlet 300
  • FIG. 5B illustrates a gas outlet 400.
  • the inner wall of the chamber 101 may prevent the gas from being condensed by the temperature controller 500, but may be a gas connected to an outer side surface of the chamber 101 (eg, the left side) and the outer side surface of the chamber 101 (eg, the right side).
  • the inlet 300 and the gas outlet 400 may be easily condensed by gas under the influence of the external low temperature.
  • the condensed gas is condensed in the pipe of the gas inlet 300 and is discharged into the chamber 101 together with the supply of the substrate processing gas during the substrate processing process, thereby causing contamination of the substrate 10.
  • the gas inlet 300 may further include a drain port 330 through which condensed gas (or condensed volatile material) may be discharged.
  • the drain port 330 may simply be a passage through which the condensed liquid substance flows out, or may have a suction function connected to a pump (not shown) to suck air. Gas may be supplied through the gas supply pipe 320, and the gas condensed in the gas inlet 300 may be discharged through the drain port 330.
  • the gas outlet 400 may also have a configuration in which a drain port (not shown) is connected to the gas discharge pipe 420 similarly to the gas inlet 300.
  • the gas outlet 400 serves to discharge (g) the gas in the chamber 101 to the outside, a separate drain port (not shown) to be provided Without the need, the gas discharge pipe 420 discharges the gas in the chamber 101 to the outside (g) and at the same time inside the gas outlet 400 so that the end 430 can also serve as a drain port
  • the condensed gas and the like may be discharged to the outside (d).
  • FIG. 6 is a perspective view illustrating a form in which material discharge holes 130: 130a, 130b, 130c, and 130d are formed in a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 6 at least one side of the chamber 101, specifically, the left side and the right side of the chamber 101 in which the gas inlet 300 and the gas outlet 400 described with reference to FIG. 5 are disposed are illustrated.
  • a plurality of material discharge holes 130 may be formed on the side surface except for the above.
  • the material discharge hole may be connected to a pumping means (not shown) disposed outside to effectively discharge the condensed material inside the chamber 101.
  • the material discharge holes 130 Through the plurality of material discharge holes 130, it is possible to prevent the gas from condensing on the inner wall of the chamber 101 together with the temperature controller 500, and even if a gas condensation occurs, the material discharge holes 130 may occur. By discharging to the outside through, the contamination of the inner wall of the chamber 101 is more effectively prevented, there is an advantage that can further increase the reliability and yield of the product.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

Disclosed is a substrate processing apparatus. The substrate processing apparatus according to the present invention comprises: an inlet (300) for introducing a substrate processing gas into a chamber (101); an outlet (400) for discharging the substrate processing gas within the chamber (101) to the outside; a heater, disposed within the chamber (101), for heating the inside of the chamber (101); and a temperature controller (500), disposed on the external surface of the chamber (101), for controlling the temperature of the walls of the chamber, wherein the temperature controller (500) maintains the temperature of the inner walls of the chamber (101) at a temperature of 50°C to 250°C so that a material on a substrate, which is evaporated or dried within the chamber, is not condensed on the inner walls of the chamber (101).

Description

기판 프로세싱 장치Substrate processing equipment
본 발명은 기판 프로세싱 장치에 관한 것이다. 보다 상세하게는, 챔버벽의 온도를 제어하는 온도 컨트롤러를 구비하여, 챔버의 내벽에 기판 프로세싱 가스 또는 휘발성 물질이 챔버의 내벽에 응축되지 않도록 챔버의 내벽의 온도를 소정의 온도로 유지할 수 있는 기판 프로세싱 장치에 관한 것이다.The present invention relates to a substrate processing apparatus. More specifically, the substrate having a temperature controller for controlling the temperature of the chamber wall, the substrate capable of maintaining the temperature of the inner wall of the chamber at a predetermined temperature so that the substrate processing gas or volatiles do not condense on the inner wall of the chamber It relates to a processing device.
표시 장치 또는 반도체 소자 제조시 사용되는 기판 프로세싱 장치에서 기판이 프로세싱되는 챔버 내부에는 많은 양의 가스가 공급 및 배출될 수 있다. 이러한 가스는 기판 상에 박막을 형성하거나, 기판 상의 박막에 패턴을 형성하거나, 챔버 내부의 분위기를 환기시키는 등의 목적으로 챔버에 내부에 공급되고, 챔버로부터 외부로 배출될 수 있다.In a substrate processing apparatus used in manufacturing a display device or a semiconductor device, a large amount of gas may be supplied and discharged into a chamber in which a substrate is processed. The gas may be supplied to the chamber and discharged from the chamber to the outside for the purpose of forming a thin film on the substrate, forming a pattern on the thin film on the substrate, or ventilating the atmosphere inside the chamber.
기판 프로세싱 과정 중에 챔버 내부로 공급되는 가스 또는 기판으로부터 휘발되는 가스로부터 챔버 내벽이 오염될 수 있다. 기판 프로세싱 공정 중에 챔버 내부는 소정의 공정 온도 및 공정 압력을 유지해야 할 필요성이 있으며, 이때 챔버 외부와 챔버 내부의 온도 및 압력 차이 때문에 가스가 챔버 내벽에 응축되는 현상이 발생할 수 있다. 응축된 가스는 반복되는 기판 프로세싱 공정에 있어서 증발 및 응축을 반복하거나, 다른 화학 성분의 가스와 반응하거나, 특정 온도 환경 하에서 변질됨으로써 챔버 내벽을 더욱 오염시킬 수 있다. The chamber inner wall may be contaminated from gas supplied into the chamber or gas volatilized from the substrate during substrate processing. During the substrate processing process, the inside of the chamber needs to maintain a predetermined process temperature and process pressure. At this time, a phenomenon in which the gas condenses on the inner wall of the chamber may occur due to the temperature and pressure difference between the outside of the chamber and the inside of the chamber. The condensed gas may further contaminate the chamber inner wall by repeating evaporation and condensation in a repeated substrate processing process, reacting with gases of other chemical constituents, or altering under certain temperature conditions.
결국, 종래의 기판 프로세싱 장치는, 챔버 내벽의 오염된 물질이 이후의 기판 프로세싱 과정 중에 재증발하여 기판 상에 유입되어 기판을 오염시키므로, 제품의 신뢰성이 저하되고, 수율을 하락시키는 문제점이 있었다.As a result, the conventional substrate processing apparatus has a problem that the contaminated material of the inner wall of the chamber re-evaporates during subsequent substrate processing and flows onto the substrate to contaminate the substrate, thereby degrading the reliability of the product and lowering the yield.
또한, 종래의 기판 프로세싱 장치는, 챔버 내벽에 오염된 물질을 세정하거나, 챔버벽 자체를 교체해야 하는 문제가 발생하므로, 제품의 생산 비용이 증대되는 문제점이 있었다.In addition, the conventional substrate processing apparatus has a problem that the problem of having to clean the contaminated material on the chamber inner wall or replace the chamber wall itself, there is a problem that the production cost of the product is increased.
본 발명은 상기와 같은 종래 기술의 제반 문제점을 해결하기 위해 안출된 것으로서, 챔버 내벽에 가스가 응축되지 않도록 챔버 내벽을 소정의 온도로 유지할 수 있는 기판 프로세싱 장치를 제공하는 것을 목적으로 한다.The present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide a substrate processing apparatus capable of maintaining the chamber inner wall at a predetermined temperature so that gas does not condense on the chamber inner wall.
또한, 본 발명은 챔버 내벽을 오염되지 않게 유지함으로써, 제품의 신뢰성 및 수율을 증대시킬 수 있는 기판 프로세싱 장치를 제공하는 것을 목적으로 한다.It is also an object of the present invention to provide a substrate processing apparatus capable of increasing the reliability and yield of a product by keeping the chamber inner wall free of contamination.
상기의 목적을 달성하기 위하여, 본 발명의 일 실시예에 따른 기판 프로세싱 장치는, 기판 프로세싱 장치로서, 상기 챔버 내에 기판 프로세싱 가스를 공급하는 가스 인릿(inlet); 상기 챔버 내의 기판 프로세싱 가스를 외부로 배출하는 가스 아웃릿(outlet); 상기 챔버 내에 배치되며 상기 챔버 내부를 가열하는 히터; 및 상기 챔버의 외측면에 배치되며 챔버벽의 온도를 제어하는 온도 컨트롤러를 포함하며, 상기 온도 컨트롤러는, 상기 물질이 상기 챔버의 내벽에 응축되지 않도록, 상기 챔버의 상기 내벽의 온도를 50℃ 내지 250℃로 유지하는 것을 특징으로 한다.In order to achieve the above object, a substrate processing apparatus according to an embodiment of the present invention, a substrate processing apparatus, comprising: a gas inlet for supplying a substrate processing gas into the chamber; A gas outlet for discharging the substrate processing gas in the chamber to the outside; A heater disposed in the chamber and heating the inside of the chamber; And a temperature controller disposed on an outer surface of the chamber and controlling a temperature of the chamber wall, wherein the temperature controller controls the temperature of the inner wall of the chamber to 50 ° C. to prevent the material from condensing on the inner wall of the chamber. It is characterized by maintaining at 250 ℃.
그리고, 상기의 목적을 달성하기 위하여, 본 발명의 일 실시예에 따른 휘발성 물질 응축방지 방법은, 기판 프로세싱 장치에서, 챔버 내에서 기화되거나 건조되는 기판 상의 물질이 상기 챔버의 내벽에 응축되지 않도록, 챔버벽의 온도를 제어하는 온도 컨트롤러가 상기 챔버의 상기 내벽의 온도를 50℃ 내지 250℃로 유지하는 것을 특징으로 한다.And, in order to achieve the above object, the volatile material condensation prevention method according to an embodiment of the present invention, in the substrate processing apparatus, so that the material on the substrate vaporized or dried in the chamber is not condensed on the inner wall of the chamber, The temperature controller for controlling the temperature of the chamber wall is characterized in that to maintain the temperature of the inner wall of the chamber at 50 ℃ to 250 ℃.
상기와 같이 구성된 본 발명에 따르면, 챔버 내벽을 소정의 온도로 유지함으로써, 챔버 내벽에 가스가 응축되지 않도록 하는 효과가 있다.According to the present invention configured as described above, by maintaining the chamber inner wall at a predetermined temperature, there is an effect that the gas does not condense on the chamber inner wall.
또한, 본 발명은 챔버 내벽을 오염되지 않게 유지함으로써, 제품의 신뢰성 및 수율을 증대시킬 수 있는 효과가 있다.In addition, the present invention has the effect of increasing the reliability and yield of the product by keeping the chamber inner wall free of contamination.
도 1은 본 발명의 일 실시예에 따른 기판 프로세싱 장치의 전체적인 구성을 나타내는 사시도이다.1 is a perspective view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따른 기판 프로세싱 장치를 나타내는 정단면도이다.2 is a front sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
도 3은 본 발명의 일 실시예에 따른 기판 프로세싱 장치를 나타내는 측단면도이다.3 is a side cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
도 4는 본 발명의 일 실시예에 따른 온도 컨트롤러의 동작을 나타내는 개략도이다.4 is a schematic diagram illustrating an operation of a temperature controller according to an embodiment of the present invention.
도 5는 본 발명의 일 실시예에 따른 가스 인릿 및 가스 아웃릿을 나타내는 단면도이다.5 is a cross-sectional view illustrating a gas inlet and a gas outlet according to an embodiment of the present invention.
도 6은 본 발명의 일 실시예에 따른 기판 프로세싱 장치에 물질 배출 홀이 형성된 형태를 나타내는 사시도이다.6 is a perspective view illustrating a form in which a material discharge hole is formed in a substrate processing apparatus according to an embodiment of the present invention.
<부호의 설명><Description of the code>
10: 기판10: Substrate
11: 기판 홀더11: PCB holder
100: 본체100: main body
101: 챔버101: chamber
110: 도어110: door
120: 보강리브120: reinforcement rib
200: 히터200: heater
210: 메인 히터210: main heater
220: 서브 히터220: sub heater
300: 가스 인릿300: gas inlet
400: 가스 아웃릿400: gas outlet
500: 온도 컨트롤러500: temperature controller
600: 챔버벽 히팅 모듈600: chamber wall heating module
700: 챔버벽 쿨링 모듈700: chamber wall cooling module
후술하는 본 발명에 대한 상세한 설명은, 본 발명이 실시될 수 있는 특정 실시예를 예시로서 도시하는 첨부 도면을 참조한다. 이들 실시예는 당업자가 본 발명을 실시할 수 있기에 충분하도록 상세히 설명된다. 본 발명의 다양한 실시예는 서로 다르지만 상호 배타적일 필요는 없음이 이해되어야 한다. 예를 들어, 여기에 기재되어 있는 특정 형상, 구조 및 특성은 일 실시예에 관련하여 본 발명의 정신 및 범위를 벗어나지 않으면서 다른 실시예로 구현될 수 있다. 또한, 각각의 개시된 실시예 내의 개별 구성요소의 위치 또는 배치는 본 발명의 정신 및 범위를 벗어나지 않으면서 변경될 수 있음이 이해되어야 한다. 따라서, 후술하는 상세한 설명은 한정적인 의미로서 취하려는 것이 아니며, 본 발명의 범위는, 적절하게 설명된다면, 그 청구항들이 주장하는 것과 균등한 모든 범위와 더불어 첨부된 청구항에 의해서만 한정된다. 도면에서 유사한 참조부호는 여러 측면에 걸쳐서 동일하거나 유사한 기능을 지칭하며, 길이 및 면적, 두께 등과 그 형태는 편의를 하여 과장되어 표현될 수도 있다.DETAILED DESCRIPTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain shapes, structures, and characteristics described herein may be embodied in other embodiments without departing from the spirit and scope of the invention with respect to one embodiment. In addition, it is to be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. In the drawings, like reference numerals refer to the same or similar functions throughout the several aspects, and length, area, thickness, and the like may be exaggerated for convenience.
본 명세서에 있어서, 기판은 LED, LCD 등의 표시장치에 사용하는 기판, 반도체 기판, 태양전지 기판 등의 모든 기판을 포함하는 의미로 이해될 수 있으며, 바람직하게는 플렉서블(Flexible) 표시장치에 사용되는 플렉서블 기판을 의미하는 것으로 이해될 수 있다.In the present specification, the substrate may be understood as including all substrates such as substrates used in display devices such as LEDs and LCDs, semiconductor substrates, solar cell substrates, and the like, and preferably used in flexible display devices. It can be understood to mean a flexible substrate.
또한, 본 명세서에 있어서, 기판 프로세싱 공정이란 증착 공정, 열처리 공정 등을 포함하는 의미로 이해될 수 있으며, 바람직하게는 논플렉서블(Non-Flexible) 기판 상에 플렉서블 기판 형성, 플렉서블 기판 상에 패턴 형성, 플렉서블 기판 분리 등의 공정을 의미하는 것으로 이해될 수 있다.In addition, in the present specification, the substrate processing process may be understood to include a deposition process, a heat treatment process, and the like, and preferably, a flexible substrate is formed on a non-flexible substrate and a pattern is formed on the flexible substrate. It may be understood to mean a process such as separating a flexible substrate.
이하, 첨부된 도면을 참조하여 본 발명의 실시예에 따른 기판 프로세싱 장치를 상세히 설명한다.Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
도 1는 본 발명의 일 실시예에 따른 기판 프로세싱 장치의 전체적인 구성을 나타내는 사시도, 도 2은 본 발명의 일 실시예에 따른 기판 프로세싱 장치를 나타내는 정단면도, 도 3는 본 발명의 일 실시예에 따른 기판 프로세싱 장치를 나타내는 측단면도이다.1 is a perspective view showing the overall configuration of a substrate processing apparatus according to an embodiment of the present invention, Figure 2 is a front sectional view showing a substrate processing apparatus according to an embodiment of the present invention, Figure 3 is an embodiment of the present invention Side cross-sectional view showing a substrate processing apparatus according to the above.
도 1 내지 도 3를 참조하면, 본 실시예에 따른 기판 프로세싱 장치는 본체(100), 히터(200), 가스 인릿(inlet; 300), 가스 아웃릿(outlet; 400) 및 온도 컨트롤러(500)를 포함할 수 있다.1 to 3, the substrate processing apparatus according to the present embodiment includes a main body 100, a heater 200, a gas inlet 300, a gas outlet 400, and a temperature controller 500. It may include.
본체(100)는 내부에 기판(10)이 로딩되어 처리되는 밀폐된 공간인 챔버(101)를 구성한다. 본체(100)의 재질은 석영(Quartz), 스테인리스 스틸(SUS), 알루미늄(Aluminium), 그라파이트(Graphite), 실리콘 카바이드(Silicon carbide) 또는 산화 알루미늄(Aluminium oxide) 중 적어도 어느 하나일 수 있다.The main body 100 constitutes a chamber 101 which is an enclosed space in which the substrate 10 is loaded and processed therein. The material of the body 100 may be at least one of quartz, stainless steel, aluminum, aluminum, graphite, silicon carbide, or aluminum oxide.
챔버(101) 내부에는 복수개의 기판(10)[도 2 참조]이 배치될 수 있다. 복수개의 기판(10)은 각각 일정간격을 가지면서 배치되며, 기판 홀더(11)[도 2 참조]에 지지되거나, 보트(미도시)에 안착되어 챔버(101) 내부에 배치될 수 있다.A plurality of substrates 10 (see FIG. 2) may be disposed in the chamber 101. The plurality of substrates 10 may be disposed to have a predetermined interval, and may be supported by the substrate holder 11 (see FIG. 2) or may be disposed in the chamber 101 by being seated in a boat (not shown).
본체(100)의 일면[일 예로, 전면]에는 기판(10)이 로딩/언로딩 되는 통로인 출입구(115)가 형성될 수 있다. 출입구(115)는 본체(100)의 일면[일 예로, 전면]에만 형성될 수 있고, 반대면[일 예로, 후면]에도 형성될 수 있다.An entrance 115, which is a passage through which the substrate 10 is loaded / unloaded, may be formed on one surface (eg, the front surface) of the main body 100. The doorway 115 may be formed only on one surface (for example, the front surface) of the main body 100, and may be formed on the opposite surface (for example, the rear surface).
도어(110)는 본체(100)의 일면[즉, 출입구(115)가 형성된 면]에 설치될 수 있다. 도어는 전후방향, 좌우방향 또는 상하방향으로 슬라이딩 가능하게 설치될 수 있다. 도어(110)는 출입구(115)를 개폐할 수 있고, 출입구(115)의 개폐 여부에 따라서 챔버(101)도 물론 개폐될 수 있다. 또한, 도어(110)에 의하여 출입구(115)가 완전하게 실링되도록 도어(110)와 본체(100)의 출입구(115)가 형성된 면 사이에는 오링(O-ring) 등의 실링부재(미도시)가 개재될 수 있다.The door 110 may be installed on one surface of the main body 100 (that is, the surface on which the entrance 115 is formed). The door may be slidably installed in the front, rear, left, and right directions. The door 110 may open and close the doorway 115, and of course, the chamber 101 may be opened or closed depending on whether the doorway 115 is opened or closed. In addition, a sealing member such as an O-ring (not shown) is formed between the door 110 and the surface on which the door 115 of the main body 100 is formed so that the door 115 is completely sealed by the door 110. May be interposed.
한편, 본체(100)의 외측면 상에는 보강리브(120)를 결합할 수 있다. 본체(100)는 공정 중에 내부에서 강한 압력 또는 고온의 영향을 받아 파손되거나 변형이 발생할 수 있다. 따라서 보강리브(120)를 본체(100)의 외측면 상에 결합하여 본체(100)의 내구성을 향상시킬 수 있다. 필요에 따라서, 특정 외측면 또는 외측면 상의 일부에만 보강리브(120)를 결합할 수도 있다.On the other hand, the reinforcing rib 120 may be coupled to the outer surface of the main body 100. The main body 100 may be damaged or deformed under the influence of strong pressure or high temperature in the process. Therefore, by combining the reinforcing rib 120 on the outer surface of the main body 100 can improve the durability of the main body 100. If necessary, the reinforcing rib 120 may be coupled only to a specific outer surface or a portion of the outer surface.
히터(200)는 챔버(101) 내부를 가열하여 기판 프로세싱 분위기를 조성하며 기판(10)을 직접 가열하는 역할을 하는 메인 히터(210) 및 챔버(101) 내부의 열 손실을 방지하는 역할을 하는 서브 히터(220)를 포함할 수 있다.The heater 200 forms a substrate processing atmosphere by heating the inside of the chamber 101 and prevents heat loss inside the main heater 210 and the chamber 101 which directly serves to heat the substrate 10. The sub heater 220 may be included.
메인 히터(210)는 기판(10)의 로딩/언로딩 방향과 수직한 방향으로 일정한 간격을 가지면서 배치될 수 있고, 기판(10)의 적층 방향을 따라 수직으로 일정한 간격을 가지면서 배치될 수 있다. 서브 히터(220)는 기판(10)의 로딩/언로딩 방향과 평행한 방향으로 챔버(101) 내벽에 기판(10)의 적층 방향을 따라 수직으로 일정한 간격을 가지면서 배치될 수 있다.The main heater 210 may be disposed at regular intervals in a direction perpendicular to the loading / unloading direction of the substrate 10, and may be disposed at regular intervals vertically along the stacking direction of the substrate 10. have. The sub heater 220 may be disposed at regular intervals vertically along the stacking direction of the substrate 10 on the inner wall of the chamber 101 in a direction parallel to the loading / unloading direction of the substrate 10.
메인 히터(210)는 복수개의 발열체(211) 및 각각의 발열체(211)의 양단에 설치된 단자(212)를 포함할 수 있고, 서브 히터(220)도 동일하게 복수개의 발열체(221) 및 각각의 발열체(221)의 양단에 설치된 단자(222)를 포함할 수 있다. 발열체(211, 221)의 개수는 본체(100)의 크기, 기판(10)의 크기 및 개수에 따라서 다양하게 변경될 수 있다.The main heater 210 may include a plurality of heating elements 211 and terminals 212 provided at both ends of each of the heating elements 211, and the sub heater 220 may also include the plurality of heating elements 221 and each of the heating elements 211. It may include a terminal 222 provided at both ends of the heating element (221). The number of the heating elements 211 and 221 may be variously changed according to the size of the body 100, the size and the number of the substrate 10.
발열체(211, 221)는 챔버(101)의 일측면에서 타측면까지 연통되는 바(bar) 형상을 가지며, 석영관 내부에 발열 물질이 삽입된 형태일 수 있다. 일 예로, 메인 히터(210)의 발열체(211)는 챔버(101)의 좌측면에서 우측면까지 연통될 수 있고, 서브 히터(220)의 발열체(221)는 출입구(115) 부분을 제외한 챔버(101)의 전면에서 후면까지 연통될 수 있다. 단자(212, 222)는 외부의 전원(미도시)로부터 전력을 공급받아 발열체(211, 221)에서 열을 발생시킬 수 있도록 한다.The heating elements 211 and 221 may have a bar shape communicating from one side of the chamber 101 to the other side of the chamber 101, and may have a shape in which a heating material is inserted into the quartz tube. For example, the heating element 211 of the main heater 210 may communicate from the left side to the right side of the chamber 101, and the heating element 221 of the sub heater 220 may include the chamber 101 except for the entrance 115. Can be communicated from front to back. The terminals 212 and 222 may receive power from an external power source (not shown) to generate heat in the heating elements 211 and 221.
따라서, 기판(10)은 상부 및 하부에 배치된 히터(200)에 의해서 전면적이 균일하게 가열될 수 있으므로, 기판 프로세싱 공정의 신뢰성이 향상되는 이점이 있다.Therefore, since the entire surface of the substrate 10 may be uniformly heated by the heaters 200 disposed on the upper and lower portions, there is an advantage in that the reliability of the substrate processing process is improved.
도 1 내지 도 3을 다시 참조하면, 가스 인릿(300)은 챔버(101)[또는 본체(100)]의 외부 일측면[일 예로, 좌측면]에 연결되고, 가스 아웃릿(400)은 챔버(101)[또는 본체(100)]의 외부 타측면[일 예로, 우측면]에 연결될 수 있다.Referring again to FIGS. 1 to 3, the gas inlet 300 is connected to an outer one side (eg, left side) of the chamber 101 (or the main body 100), and the gas outlet 400 is connected to the chamber. It may be connected to the other external side [eg, the right side] of the 101 (or the main body 100).
가스 인릿(300)은 챔버(101)의 내부로 기판 프로세싱 가스를 공급하는 통로를 제공할 수 있다. 가스 인릿(300)은 가스 저장부(미도시)와 연결되어 기판 프로세싱 가스를 공급받는 가스 서플라이 파이프(320) 및 가스 서플라이 파이프(320)에 수직으로 일정한 간격을 가지도록 복수개 형성된 가스 인릿 파이프(310)를 포함할 수 있다. 가스 인릿 파이프(310)는 본체(100)를 관통하여 챔버(101) 내부로 연결될 수 있으며, 가스 인릿 파이프(310)의 단부에 형성된 가스 인릿 홀(311)을 통해 기판 프로세싱 가스가 챔버(101) 내부로 공급될 수 있다.The gas inlet 300 may provide a passage for supplying the substrate processing gas into the chamber 101. The gas inlet 300 is connected to a gas storage unit (not shown), and a plurality of gas inlet pipes 310 are formed to have a constant vertically perpendicular to the gas supply pipe 320 and the gas supply pipe 320 supplied with the substrate processing gas. ) May be included. The gas inlet pipe 310 may be connected to the inside of the chamber 101 through the main body 100, and the substrate processing gas may flow through the gas inlet hole 311 formed at the end of the gas inlet pipe 310. It can be supplied internally.
가스 아웃릿(400)은 챔버(101) 내부의 기판 프로세싱 가스를 외부로 배출하는 통로를 제공할 수 있다. 가스 아웃릿(400)은 외부의 가스 배출시설(미도시)과 연결되어 기판 프로세싱 가스를 배출하는 가스 디스차지 파이프(420) 및 가스 디스차지 파이프(420)에 수직으로 일정한 간격을 가지도록 복수개 형성된 가스 아웃릿 파이프(410)를 포함할 수 있다. 가스 아웃릿 파이프(410)는 본체(100)를 관통하여 챔버(101) 내부로 연결될 수 있으며, 가스 아웃릿 파이프(410)의 단부에 형성된 가스 아웃릿 홀(411)을 통해 가스가 챔버(101) 내부에서 외부로 배출될 수 있다.The gas outlet 400 may provide a passage for discharging the substrate processing gas inside the chamber 101 to the outside. The gas outlet 400 is connected to an external gas discharge facility (not shown), and a plurality of gas outlet pipes 420 and the gas discharge pipes 420 are formed to have a predetermined interval perpendicular to the gas discharge pipe 420 to discharge the substrate processing gas. It may include a gas outlet pipe 410. The gas outlet pipe 410 may be connected to the inside of the chamber 101 through the main body 100, and the gas may flow through the gas outlet hole 411 formed at an end of the gas outlet pipe 410. ) It can be discharged from inside to outside.
가스 인릿 홀(311)[또는 가스 인릿 파이프(310)] 및 가스 아웃릿 홀(411)[또는 가스 아웃릿 파이프(410)]은, 복수개의 기판(10)이 챔버(101)에 수용되었을 때, 기판 프로세싱 가스를 기판(10)으로 균일하게 공급하고, 기판 프로세싱 가스를 용이하게 흡입하여 외부로 배출할 수 있도록, 챔버(101) 내에 배치된 기판(10)과 상부 또는 하부에 인접하는 기판(10) 사이의 간격에 각각 위치되는 것이 바람직하다.The gas inlet hole 311 (or the gas inlet pipe 310) and the gas outlet hole 411 (or the gas outlet pipe 410) are used when the plurality of substrates 10 are accommodated in the chamber 101. In order to uniformly supply the substrate processing gas to the substrate 10 and to easily suck and discharge the substrate processing gas to the outside, the substrate 10 disposed in the chamber 101 and a substrate adjacent to the upper or lower portion thereof ( It is preferred to be located at each interval between 10).
도 1 내지 도 3를 다시 참조하면, 본 발명의 기판 프로세싱 장치는 챔버(101)의 외측면에 배치되어 챔버벽의 온도를 제어하는 온도 컨트롤러(500)를 포함하는 것을 특징으로 한다.1 to 3 again, the substrate processing apparatus of the present invention is characterized in that it comprises a temperature controller 500 disposed on the outer surface of the chamber 101 to control the temperature of the chamber wall.
온도 컨트롤러(500)는 챔버벽의 외측면에 인접하거나, 소정의 거리만큼 이격되어 배치될 수 있으며, 내부에 열매(熱媒) 또는 냉매가 흐를 수 있는 파이프 등을 지그재그로 휘어지게 배치하는 것이 바람직하다. 온도 컨트롤러(500)는 기판 프로세싱 공정 중에 기판(10) 상에서 휘발되는 물질, 챔버(101)에 공급되고 배출되는 물질 등이 챔버(101)의 내벽에 응축되지 않도록 챔버(101)의 내벽 온도를 소정의 온도로 유지하는 역할을 할 수 있다. 바람직하게는, 챔버(101)의 내벽 온도를 50℃ 내지 250℃로 유지할 수 있다.The temperature controller 500 may be disposed adjacent to the outer surface of the chamber wall or spaced apart by a predetermined distance, and may be arranged in a zig-zag manner in which a pipe or the like through which fruit or a refrigerant may flow may be zigzag. Do. The temperature controller 500 sets an inner wall temperature of the chamber 101 such that materials volatilized on the substrate 10, materials supplied to and discharged from the chamber 101, and the like are not condensed on the inner wall of the chamber 101 during the substrate processing process. It can serve to maintain the temperature of. Preferably, the inner wall temperature of the chamber 101 may be maintained at 50 ° C to 250 ° C.
온도 컨트롤러(500)는 챔버벽의 상부측(510), 좌우측(520: 520a, 520b), 하부측(530) 및 전후측의 도어(540, 550)에 배치될 수 있으나, 챔버(101)의 내벽 온도를 소정의 온도로 유지하는 본 발명의 목적에 달성되는 범위 내에서, 챔버(101)의 일부 외측면에는 온도 컨트롤러(500)의 배치가 생략될 수도 있다.The temperature controller 500 may be disposed on the upper side 510, the left and right sides 520a and 520b, the lower side 530, and the front and rear doors 540 and 550 of the chamber wall. The arrangement of the temperature controller 500 may be omitted on some outer surface of the chamber 101 within the range achieved for the purpose of the present invention to maintain the inner wall temperature at a predetermined temperature.
일 예로, 본 발명의 기판 프로세싱 장치가 플렉서블 표시장치에 사용되는 플렉서블 기판(10)을 처리하는 것을 상정하면, 이때 기판 프로세싱 과정에서 온도 컨트롤러(500)의 기능을 구체적으로 설명하면 아래와 같다.For example, assuming that the substrate processing apparatus of the present invention processes the flexible substrate 10 used in the flexible display device, the function of the temperature controller 500 in the substrate processing process will be described in detail below.
일반적으로 플렉서블 기판(10)의 제조과정은, 논플렉서블 기판 상에 플렉서블 기판을 형성하는 공정, 플렉서블 기판에 패턴을 형성하는 공정 및 논플렉서블 기판에서 플렉서블 기판을 분리하는 공정으로 나누어 질 수 있다.In general, the manufacturing process of the flexible substrate 10 may be divided into a process of forming a flexible substrate on the non-flexible substrate, a process of forming a pattern on the flexible substrate, and a process of separating the flexible substrate from the non-flexible substrate.
플렉서블 기판은 유리, 플라스틱 등의 논플렉서블 기판 상에 폴리이미드(Polyimide) 등으로 구성되는 막을 형성하고 열처리를 하여 경화시킨 후, 논플렉서블 기판과 플렉서블 기판을 점착하는 물질에 용매를 주입하여 점착력을 약화시키거나 점착 물질을 분해하여 플렉서블 기판을 논플렉서블 기판으로부터 분리하여 완성할 수 있다.The flexible substrate is formed by forming a film made of polyimide or the like on a non-flexible substrate such as glass or plastic, followed by heat treatment and curing, and then injecting a solvent into a material adhering the non-flexible substrate and the flexible substrate to weaken adhesive force. The flexible substrate may be separated from the non-flexible substrate by completing the adhesive material or by decomposing the adhesive material.
이때, 주입하는 용매 성분 또는 플렉서블 기판의 형성과정 중에 플렉서블 기판에 포함되어 있던 용매 성분이 휘발되어 가스 아웃릿(400)을 통해 챔버(101) 외부로 배출될 수 있으나, 챔버(101) 외부와 챔버(101) 내부의 온도 및 압력 차이 때문에 챔버(101) 내벽의 소정의 부분은 위 물질이 휘발되지 못하고 응축될 정도로 챔버(101) 내벽의 온도가 낮게 형성되어 있을 수 있다. 결국, 챔버(101) 내벽에 응축된 용매 성분은 챔버(101)를 오염시키거나, 후속 공정에서 기판(10)을 오염시키는 문제점이 발생할 수 있다. 따라서, 본 발명의 기판 프로세싱 장치는 용매를 포함한 챔버(101) 내의 가스가 챔버(101) 내벽에 응축되지 않고 기체 상태로 모두 외부로 배출될 수 있도록, 챔버(101) 내벽 온도를 가스가 응축되지 않을 정도로 유지하는 것을 특징으로 한다.At this time, during the formation of the injected solvent component or the flexible substrate, the solvent component included in the flexible substrate may be volatilized and discharged to the outside of the chamber 101 through the gas outlet 400, but outside the chamber 101 and the chamber Due to the difference in temperature and pressure inside the predetermined portion of the inner wall of the chamber 101, the temperature of the inner wall of the chamber 101 may be formed low enough to condense the above substances. As a result, a solvent component condensed on the inner wall of the chamber 101 may contaminate the chamber 101 or may contaminate the substrate 10 in a subsequent process. Accordingly, the substrate processing apparatus of the present invention does not condense gas inside the chamber 101 so that the gas in the chamber 101 including the solvent can be discharged to the outside in the gas state without condensing on the inner wall of the chamber 101. It is characterized in that it is maintained so as not to.
일 예로, 기판(10) 상에 포함되어 있던 물질은 용매와 같은 휘발성 물질로서, 50℃ 내지 250℃에서 기화되는 물질일 수 있다. 이러한 물질은 바람직하게는 NMP(n-methyl-2-pyrrolidone)일 수 있고, IPA, 아세톤(Acetone), PGMEA(Propylene Glycol Monomethyl Ether Acetate) 등의 휘발성 물질일 수도 있다.For example, the material included on the substrate 10 may be a volatile material such as a solvent and may be a material vaporized at 50 ° C to 250 ° C. Such a material may preferably be n-methyl-2-pyrrolidone (NMP), or may be a volatile material such as IPA, acetone, or propylene glycol monomethyl ether acetate (PGMEA).
상기 물질들이 챔버(101) 내부에서 응축되지 않고 기체 상태를 유지하여 배출되도록 하기 위해서, 챔버(101)의 내벽의 온도를 상기 물질들이 기화할 수 있는 온도로 유지해야 함은 물론이다. 이를 위해, 온도 컨트롤러(500)에 챔버벽 히팅 모듈(600)과 챔버벽 쿨링 모듈(700)을 연결할 수 있다.In order for the materials to be discharged by maintaining the gas state without condensation in the chamber 101, the temperature of the inner wall of the chamber 101 must be maintained at a temperature at which the materials can vaporize. To this end, the chamber wall heating module 600 and the chamber wall cooling module 700 may be connected to the temperature controller 500.
도 4는 본 발명의 일 실시예에 따른 온도 컨트롤러(500)의 동작을 나타내는 개략도이다.4 is a schematic diagram illustrating an operation of a temperature controller 500 according to an embodiment of the present invention.
도 4를 참조하면, 온도 컨트롤러(500), 챔버벽 히팅 모듈(600) 및 챔버벽 쿨링 모듈(700) 중간에는 3 웨이 밸브(3 way valve; 3WV)가 설치될 수 있다. 챔버벽 히팅 모듈(600)은 냉각수(Process Cooling Water, PCW)의 온도를 순간적으로 올릴 수 있는 열 교환기를 포함하여, 냉각수를 가열하여 공급하는 장치로 이해될 수 있고, 챔버벽 쿨링 모듈(700)은 냉각수를 공급하는 장치로 이해될 수 있다.Referring to FIG. 4, a 3 way valve (3WV) may be installed in the middle of the temperature controller 500, the chamber wall heating module 600, and the chamber wall cooling module 700. The chamber wall heating module 600 may be understood as a device for heating and supplying cooling water, including a heat exchanger capable of temporarily raising the temperature of process cooling water (PCW), and the chamber wall cooling module 700. Can be understood as a device for supplying cooling water.
일 예로, 기판 프로세싱 공정시에는 챔버(101) 내부의 기판 프로세싱 온도가 80℃에서 150℃, 150℃에서 250℃, 250℃에서 350℃ 등으로 단계적으로 상승할 수 있다. 기판 프로세싱 초기에는 챔버(101) 내부의 기판 프로세싱 온도가 80℃ 정도이기 때문에 챔버(101) 내벽의 온도는 상대적으로 더 낮은 60 ~ 80℃ 미만일 수 있고, 증발대역을 80 ~ 150℃ 정도로 갖는 휘발성 물질 중 하나인 NMP는 챔버(101) 내벽에 응축될 가능성이 높다. 따라서, 기판 프로세싱 초기에는 3 웨이 밸브(3WV)를 제어하여 챔버벽 히팅 모듈(600)로부터 온도 컨트롤러(500)에 냉각수를 가열하여 공급함으로써(P1), 챔버벽의 온도를 NMP의 최소 증발대역인 80℃ 이상으로 유지할 수 있다.For example, in the substrate processing process, the substrate processing temperature inside the chamber 101 may be gradually increased to 80 ° C. to 150 ° C., 150 ° C. to 250 ° C., 250 ° C. to 350 ° C., and the like. Since the substrate processing temperature inside the chamber 101 is about 80 ° C. at the beginning of substrate processing, the temperature of the inner wall of the chamber 101 may be lower than 60 ° C. to 80 ° C., and the volatile material having an evaporation band of about 80 ° C. to 150 ° C. NMP, one of which is likely to condense on the inner wall of the chamber 101. Therefore, at the beginning of substrate processing, by controlling the three-way valve (3WV) to supply the cooling water from the chamber wall heating module 600 to the temperature controller 500 by heating (P1), the temperature of the chamber wall is the minimum evaporation zone of NMP It can maintain at 80 degreeC or more.
챔버(101) 내부의 기판 프로세싱 온도가 300℃ 이하인 경우에는 챔버벽 히팅 모듈(600)을 작동시키고, 챔버(101) 내부의 기판 프로세싱 온도가 300℃를 초과하게 되면, 3웨이 밸브(3WV)를 제어하여 챔버벽 쿨링 모듈(700)로부터 온도 컨트롤러(500)에 냉각수를 공급함으로써(P2), 챔버벽의 온도를 NMP의 최소 증발대역인 80℃ 이상으로 유지할 수 있다. 물론, 챔버(101) 내부의 기판 프로세싱 온도가 300℃를 초과하게 되면 굳이 온도 컨트롤러(500)에 냉각수를 공급하지 않더라도 챔버벽의 온도가 80℃ 이상이 되는 것은 당연하나, 챔버벽의 온도가 NMP의 증발대역인 80 ~ 150℃를 넘어서게 되면 챔버벽의 뒤틀림, 파손 문제가 발생할 수 있으므로, 챔버벽 쿨링 모듈(700)로부터 온도 컨트롤러(500)에 적절하게 냉각수를 공급하는 것이 필요하다. 다시 말해, 챔버(101) 내부의 기판 프로세싱 온도가 300℃ 이하이면 챔버벽 히팅 모듈(600)을 작동시키고, 챔버(101) 내부의 기판 프로세싱 온도가 300℃를 초과하면 챔버벽 쿨링 모듈(700)을 작동시켜, 챔버(101)의 내벽의 온도를 50℃ 내지 250℃로 유지할 수 있는 것이다.When the substrate processing temperature in the chamber 101 is 300 ° C. or lower, the chamber wall heating module 600 is operated. When the substrate processing temperature in the chamber 101 exceeds 300 ° C., the 3-way valve 3WV is turned on. By controlling and supplying cooling water from the chamber wall cooling module 700 to the temperature controller 500 (P2), the temperature of the chamber wall can be maintained at 80 ° C. or more, which is the minimum evaporation band of NMP. Of course, when the substrate processing temperature in the chamber 101 exceeds 300 ℃, even if the coolant is not supplied to the temperature controller 500, it is natural that the temperature of the chamber wall is 80 ℃ or more, the temperature of the chamber wall is NMP If it exceeds the evaporation zone of 80 ~ 150 ° C may cause problems of the chamber wall distortion, breakage, it is necessary to properly supply the cooling water from the chamber wall cooling module 700 to the temperature controller 500. In other words, when the substrate processing temperature inside the chamber 101 is 300 ° C. or lower, the chamber wall heating module 600 is operated. When the substrate processing temperature inside the chamber 101 exceeds 300 ° C., the chamber wall cooling module 700 is operated. By operating the, the temperature of the inner wall of the chamber 101 can be maintained at 50 ℃ to 250 ℃.
이와 같이, 본 발명의 기판 프로세싱 장치는 온도 컨트롤러(500)를 구비하여, 챔버(101) 내벽을 소정의 온도(즉, 가스의 증발 온도)로 유지하여 챔버(101) 내벽에 가스가 응축되지 않도록 하는 이점이 있다. 또한, 챔버(101) 내벽에 가스가 응축되지 않고 챔버(101) 외부로 모두 배출될 수 있으므로, 챔버(101) 내벽이 오염되지 않고, 제품의 신뢰성 및 수율을 증대시킬 수 있는 이점이 있다.As such, the substrate processing apparatus of the present invention includes a temperature controller 500 to maintain the inner wall of the chamber 101 at a predetermined temperature (that is, the evaporation temperature of the gas) so that the gas does not condense on the inner wall of the chamber 101. This has the advantage. In addition, since the gas may be discharged to the outside of the chamber 101 without condensing the gas on the inner wall of the chamber 101, the inner wall of the chamber 101 is not contaminated and there is an advantage of increasing the reliability and yield of the product.
한편, 본 발명의 기판 프로세싱 장치는 응축된 가스를 배출하기 위한 수단을 더 구비할 수 있다. 이하에서는 도 5 및 도 6을 참조하여 설명한다.Meanwhile, the substrate processing apparatus of the present invention may further include means for discharging the condensed gas. Hereinafter, a description will be given with reference to FIGS. 5 and 6.
도 5는 본 발명의 일 실시예에 따른 가스 인릿(300) 및 가스 아웃릿(400)을 나타내는 단면도이다. 도 5의 (a)는 가스 인릿(300), 도 5의 (b)는 가스 아웃릿(400)을 나타낸다.5 is a cross-sectional view illustrating a gas inlet 300 and a gas outlet 400 according to an embodiment of the present invention. FIG. 5A illustrates a gas inlet 300 and FIG. 5B illustrates a gas outlet 400.
챔버(101) 내벽은 온도 컨트롤러(500)에 의해 가스가 응축되지 않도록 할 수 있으나, 챔버(101)의 외부 일측면[일 예로, 좌측면] 및 외부 타측면[일 예로, 우측면]에 연결된 가스 인릿(300)과 가스 아웃릿(400)은 외부의 낮은 온도의 영향을 받아 가스가 쉽게 응축될 수 있다. 응축된 가스는 가스 인릿(300)의 파이프에 응축되어 있다가 기판 프로세싱 공정시에 기판 프로세싱 가스의 공급과 더불어 챔버(101) 내부로 토출되면서 기판(10)의 오염을 발생할 수 있는 문제점이 있다.The inner wall of the chamber 101 may prevent the gas from being condensed by the temperature controller 500, but may be a gas connected to an outer side surface of the chamber 101 (eg, the left side) and the outer side surface of the chamber 101 (eg, the right side). The inlet 300 and the gas outlet 400 may be easily condensed by gas under the influence of the external low temperature. The condensed gas is condensed in the pipe of the gas inlet 300 and is discharged into the chamber 101 together with the supply of the substrate processing gas during the substrate processing process, thereby causing contamination of the substrate 10.
따라서, 도 5의 (a)에 도시된 바와 같이, 가스 인릿(300)은 응축된 가스[또는, 응축된 휘발성 물질]을 배출할 수 있는 드레인 포트(drain port; 330)를 더 구비할 수 있다. 드레인 포트(330)는 단순히 응축된 액체 상태의 물질을 흘러 내보내는 통로일 수도 있고, 펌프(미도시) 등과 연결되어 공기를 흡입할 수 있는 석션(suction) 기능을 갖출 수도 있다. 가스 서플라이 파이프(320)를 통해서 가스를 공급(g)하고, 가스 인릿(300) 내부에서 응축된 가스 등은 드레인 포트(330)를 통해 배출(d)할 수 있다.Accordingly, as shown in FIG. 5A, the gas inlet 300 may further include a drain port 330 through which condensed gas (or condensed volatile material) may be discharged. . The drain port 330 may simply be a passage through which the condensed liquid substance flows out, or may have a suction function connected to a pump (not shown) to suck air. Gas may be supplied through the gas supply pipe 320, and the gas condensed in the gas inlet 300 may be discharged through the drain port 330.
가스 아웃릿(400) 역시 가스 인릿(300)과 동일하게 가스 디스차지 파이프(420)에 드레인 포트(미도시)가 연결된 구성을 가질 수 있다.The gas outlet 400 may also have a configuration in which a drain port (not shown) is connected to the gas discharge pipe 420 similarly to the gas inlet 300.
한편, 도 5의 (b)에 도시된 바와 같이, 가스 아웃릿(400)은 챔버(101) 내부의 가스를 외부로 배출(g)하는 역할을 하므로, 따로 드레인 포트(미도시)를 구비할 필요없이, 가스 디스차지 파이프(420)의 단부(430)가 드레인 포트의 역할을 겸할 수 있도록, 챔버(101) 내부의 가스를 외부로 배출(g)함과 동시에 가스 아웃릿(400) 내부에서 응축된 가스 등을 외부로 같이 배출(d)할 수 있다.On the other hand, as shown in (b) of Figure 5, the gas outlet 400 serves to discharge (g) the gas in the chamber 101 to the outside, a separate drain port (not shown) to be provided Without the need, the gas discharge pipe 420 discharges the gas in the chamber 101 to the outside (g) and at the same time inside the gas outlet 400 so that the end 430 can also serve as a drain port The condensed gas and the like may be discharged to the outside (d).
도 6은 본 발명의 일 실시예에 따른 기판 프로세싱 장치에 물질 배출 홀(hole; 130: 130a, 130b, 130c, 130d)이 형성된 형태를 나타내는 사시도이다.6 is a perspective view illustrating a form in which material discharge holes 130: 130a, 130b, 130c, and 130d are formed in a substrate processing apparatus according to an embodiment of the present invention.
도 6을 참조하면, 챔버(101)의 적어도 하나의 측면, 구체적으로는 도 5를 참조하여 설명한 가스 인릿(300) 및 가스 아웃릿(400)이 배치되는 챔버(101)의 좌측면 및 우측면을 제외한 측면에 복수개의 물질 배출 홀(130: 130a, 130b, 130c, 130d)이 형성될 수 있다. 물질 배출 홀은 외부에 배치된 펌핑 수단(미도시)에 연결되어 챔버(101) 내부의 응축된 물질을 효과적으로 배출할 수 있다.Referring to FIG. 6, at least one side of the chamber 101, specifically, the left side and the right side of the chamber 101 in which the gas inlet 300 and the gas outlet 400 described with reference to FIG. 5 are disposed are illustrated. A plurality of material discharge holes 130 (130a, 130b, 130c, and 130d) may be formed on the side surface except for the above. The material discharge hole may be connected to a pumping means (not shown) disposed outside to effectively discharge the condensed material inside the chamber 101.
복수개의 물질 배출 홀(130)을 통해, 온도 컨트롤러(500)와 더불어 챔버(101)의 내벽에 가스가 응축되는 것을 방지할 수 있고, 가스가 응축되는 상황이 발생하더라도, 물질 배출 홀(130)을 통해 외부로 방출함으로써, 챔버(101) 내벽의 오염을 더욱 효과적으로 방지하고, 제품의 신뢰성 및 수율을 보다 증대시킬 수 있는 이점이 있다.Through the plurality of material discharge holes 130, it is possible to prevent the gas from condensing on the inner wall of the chamber 101 together with the temperature controller 500, and even if a gas condensation occurs, the material discharge holes 130 may occur. By discharging to the outside through, the contamination of the inner wall of the chamber 101 is more effectively prevented, there is an advantage that can further increase the reliability and yield of the product.
본 발명은 상술한 바와 같이 바람직한 실시예를 들어 도시하고 설명하였으나, 상기 실시예에 한정되지 아니하며 본 발명의 정신을 벗어나지 않는 범위 내에서 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변형과 변경이 가능하다. 그러한 변형예 및 변경예는 본 발명과 첨부된 특허청구범위의 범위 내에 속하는 것으로 보아야 한다.Although the present invention has been shown and described with reference to preferred embodiments as described above, it is not limited to the above embodiments and various modifications made by those skilled in the art without departing from the spirit of the present invention. Modifications and variations are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.

Claims (8)

  1. 기판 프로세싱 장치로서,A substrate processing apparatus,
    챔버 내에 기판 프로세싱 가스를 공급하는 가스 인릿(inlet);A gas inlet for supplying a substrate processing gas into the chamber;
    상기 챔버 내의 기판 프로세싱 가스를 외부로 배출하는 가스 아웃릿(outlet);A gas outlet for discharging the substrate processing gas in the chamber to the outside;
    상기 챔버 내에 배치되며 상기 챔버 내부를 가열하는 히터; 및A heater disposed in the chamber and heating the inside of the chamber; And
    상기 챔버의 외측면에 배치되며 챔버벽의 온도를 제어하는 온도 컨트롤러A temperature controller disposed on an outer surface of the chamber and controlling a temperature of the chamber wall;
    를 포함하며,Including;
    상기 온도 컨트롤러는, 상기 챔버 내에서 기화되거나 건조되는 기판 상의 물질이 상기 챔버의 내벽에 응축되지 않도록, 상기 챔버의 상기 내벽의 온도를 50℃ 내지 250℃로 유지하는 것을 특징으로 하는 기판 프로세싱 장치.Wherein the temperature controller maintains the temperature of the inner wall of the chamber at 50 ° C. to 250 ° C. such that material on the substrate vaporized or dried in the chamber does not condense on the inner wall of the chamber.
  2. 제1항에 있어서,The method of claim 1,
    상기 물질은 휘발성 물질로서, 50℃ 내지 250℃에서 기화되는 물질인 것을 특징으로 하는 기판 프로세싱 장치.The material is a volatile material, substrate processing apparatus, characterized in that the material is vaporized at 50 ℃ to 250 ℃.
  3. 제1항에 있어서,The method of claim 1,
    상기 챔버 내부의 기판 프로세싱 온도가 300℃ 이하이면, 상기 온도 컨트롤러와 연결된 챔버벽 히팅 모듈을 작동시키고,When the substrate processing temperature inside the chamber is 300 ° C. or lower, the chamber wall heating module connected to the temperature controller is activated.
    상기 챔버 내부의 기판 프로세싱 온도가 300℃를 초과하면, 상기 온도 컨트롤러와 연결된 챔버벽 쿨링 모듈을 작동시켜,When the substrate processing temperature inside the chamber exceeds 300 ° C, the chamber wall cooling module connected to the temperature controller is operated to
    상기 챔버의 상기 내벽의 온도를 50℃ 내지 250℃로 유지하는 것을 특징으로 하는 기판 프로세싱 장치.And a temperature of the inner wall of the chamber at 50 ° C to 250 ° C.
  4. 제1항에 있어서,The method of claim 1,
    상기 히터는 상기 챔버의 일측면에서 타측면까지 연통되는 바(bar) 형상의 발열체를 포함하는 것을 특징으로 하는 기판 프로세싱 장치.The heater is a substrate processing apparatus, characterized in that it comprises a bar-shaped heating element communicated from one side of the chamber to the other side.
  5. 제1항에 있어서,The method of claim 1,
    상기 챔버 내에는 복수개의 기판이 배치된 것을 특징으로 하는 기판 프로세싱 장치.And a plurality of substrates disposed in the chamber.
  6. 제1항에 있어서,The method of claim 1,
    상기 가스 인릿은 상기 챔버의 외부 일측면에 연결되고,The gas inlet is connected to one outer side of the chamber,
    상기 가스 아웃릿은 상기 챔버의 외부 타측면에 연결되는 것을 특징으로 하는 기판 프로세싱 장치.And the gas outlet is connected to the other outer side of the chamber.
  7. 제6항에 있어서,The method of claim 6,
    상기 가스 인릿 또는 상기 가스 아웃릿 중 적어도 하나는 상기 물질을 배출하는 포트를 더 구비한 것을 특징으로 하는 기판 프로세싱 장치.At least one of the gas inlet or the gas outlet further comprises a port for discharging the material.
  8. 제1항에 있어서,The method of claim 1,
    상기 챔버의 적어도 하나의 측면에는 복수개의 물질 배출 홀(hole)이 형성된 것을 특징으로 하는 기판 프로세싱 장치.And a plurality of material discharge holes formed in at least one side of the chamber.
PCT/KR2015/012337 2014-11-18 2015-11-17 Substrate processing apparatus WO2016080729A1 (en)

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KR20160059356A (en) 2016-05-26
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