KR102152904B1 - Apparatus and method for treating a substrate - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. A substrate processing apparatus according to an embodiment of the present invention includes a container having an open processing space; A support unit capable of supporting and rotating a substrate positioned in the processing space; A first heating unit installed in the support unit to heat the substrate; A second heating unit positioned above the support unit to heat a predetermined area of the substrate; And a fluid supply unit supplying fluid to a substrate placed on the support unit, wherein the second heating unit comprises: a plurality of light sources; An optical fiber module for transmitting light generated from each of the light sources; It may include a light irradiation unit connected to the optical fiber module to irradiate light to a predetermined area of the substrate.

Description

Substrate processing apparatus and substrate processing method {APPARATUS AND METHOD FOR TREATING A SUBSTRATE}

The present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, to an apparatus and a substrate processing method for processing a substrate while heating the substrate surface.

In general, the process of processing a glass substrate or wafer in a flat panel display device manufacturing or semiconductor manufacturing process includes a photoresist coating process, a developing process, an etching process, an ashing process, etc. Various processes are carried out.

In each process, a wet cleaning process using chemical or deionized water and a drying process to dry the chemical or pure water remaining on the substrate surface to remove various contaminants attached to the substrate ) The process is carried out.

Recently, an etching process for selectively removing a silicon nitride film and a silicon oxide film has been performed using an aqueous chemical solution used at a high temperature such as sulfuric acid or phosphoric acid.

In a substrate processing apparatus using a high-temperature chemical aqueous solution, a substrate heating apparatus that heats a substrate using an IR lamp is applied and utilized in order to improve the etch rate.

However, in the conventional substrate heating apparatus, IR lamps are arranged at equal intervals, and the size of the outermost lamp is smaller than that of the substrate. Accordingly, a problem occurs in that the light intensity distribution on the substrate decreases sharply near the edge, and the etch rate of each region of the substrate is different.

The present invention is to provide a substrate processing apparatus and a substrate processing method for providing a uniform cleaning rate by compensating for a temperature of a specific region of a substrate in a substrate cleaning process.

In addition, the present invention is to provide a substrate processing apparatus and a substrate processing method for providing a uniform cleaning rate for each area of the substrate by uniformly providing temperature to the entire area of the substrate during the cleaning process of the substrate.

According to an aspect of the present invention, a container having a processing space with an open top; A support unit capable of supporting and rotating a substrate positioned in the processing space; A first heating unit installed in the support unit to heat the substrate; A second heating unit positioned above the support unit to heat a predetermined area of the substrate; And a fluid supply unit supplying fluid to a substrate placed on the support unit, wherein the second heating unit comprises: a plurality of light sources; An optical fiber module for transmitting light generated from each of the light sources; A substrate processing apparatus including a light irradiation unit connected to the optical fiber module to irradiate light to a predetermined area of the substrate may be provided.

Further, the optical fiber module includes a single outlet through which light is emitted to the light irradiation unit; And an optical fiber having a plurality of inlets through which light generated from each of the light sources is incident.

In addition, the optical fiber includes inlet-side optical fibers having the inlets; And an exit optical fiber having the single exit and connected to the entry optical fibers.

In addition, the light irradiation unit may include optical components such as the one or more lenses.

In addition, the light sources may be provided in an enclosure installed outside the substrate processing apparatus.

In addition, the second heating unit may further include a driver for moving the light irradiation unit to a process position located above the substrate and a standby position located outside the processing container.

In addition, the first heating unit may be provided to be heated from a central region to an edge region of the substrate, and the second heating unit may be provided to heat an edge region of the substrate.

In addition, the second heating unit may face the edge region of the substrate and may be provided on the upper wall of the processing container.

According to another aspect of the present invention, when processing a substrate, the first heating unit heats the entire area of the substrate under the substrate, and the second heating unit heats the edge area of the substrate above the substrate; The second heating unit may provide a substrate processing method in which light generated from each of the light sources is collected into one and irradiated to the edge of the substrate.

According to an embodiment of the present invention, in the cleaning process of a substrate, a region having a low temperature distribution of the substrate is additionally heated to improve the temperature distribution of the substrate.

In addition, according to an embodiment of the present invention, there is an effect of providing a uniform cleaning rate for each area of the substrate by uniformly providing temperature to the entire area during the cleaning process of the substrate.

1 is a plan view schematically showing a substrate processing facility according to an embodiment of the present invention.
2 is a plan view of the substrate processing apparatus of FIG. 1.
3 is a cross-sectional view of the substrate processing apparatus of FIG. 1.
4 is a cross-sectional view of the support unit of FIG. 3.
5 is a view for explaining a second heating unit.
6 is a schematic cross-sectional view showing a state of heating an edge region of a substrate using a second heating unit.

In the present invention, various transformations may be applied and various embodiments may be provided, and specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to a specific embodiment, it is to be understood to include all conversions, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, when it is determined that a detailed description of a related known technology may obscure the subject matter of the present invention, a detailed description thereof will be omitted.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof does not preclude in advance.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are used only for the purpose of distinguishing one component from another component.

In the exemplary embodiment of the present invention, a semiconductor substrate is illustrated and described as an example as a substrate processed by a substrate processing apparatus, but the present invention is not limited thereto, and a substrate for a liquid crystal display device, a substrate for a plasma display, and a display for field emission Display) substrate, optical disk substrate, magnetic disk substrate, optical magnetic disk substrate, photomask substrate, ceramic substrate, solar cell substrate.

In the following embodiments, an apparatus for cleaning a substrate using processing fluids such as high temperature sulfuric acid (phosphoric acid), alkaline chemical, acidic chemical, rinse, and drying gas will be described as an example. However, the technical idea of the present invention is not limited thereto, and may be applied to all types of devices that perform a process while rotating a substrate, such as an etching process.

1 is a plan view schematically showing a substrate processing facility according to an embodiment of the present invention.

1, the present invention

The substrate processing facility 1 includes an index module 1000 and a process processing module 2000. The index module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, the transfer frame 1400, and the process processing module 2000 are sequentially arranged in a line. Hereinafter, a direction in which the load port 1200, the transfer frame 1400, and the process processing module 2000 are arranged is referred to as a first direction 12. And when viewed from above, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction. It is called (16).

A carrier 1300 in which the substrate W is accommodated is mounted on the load port 1200. A plurality of load ports 1200 are provided, and they are arranged in a row along the second direction 14. In FIG. 1, it is shown that four load ports 1200 are provided. However, the number of load ports 1200 may increase or decrease according to conditions such as process efficiency and footprint of the process processing module 2000. A slot (not shown) provided to support the edge of the substrate W is formed in the carrier 1300. A plurality of slots are provided in the third direction 16. The substrates W are positioned in the carrier 1300 to be stacked in a state spaced apart from each other along the third direction 16. As the carrier 1300, a Front Opening Unified Pod (FOUP) may be used.

The process processing module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The transfer chamber 2400 is disposed in a longitudinal direction parallel to the first direction 12. Process chambers 2600 are disposed on one side and the other side of the transfer chamber 2400 along the second direction 14, respectively. The process chambers 2600 located on one side of the transfer chamber 2400 and the process chambers 2600 located on the other side of the transfer chamber 2400 are provided to be symmetrical with respect to the transfer chamber 2400. Some of the process chambers 2600 are disposed along the longitudinal direction of the transfer chamber 2400. In addition, some of the process chambers 2600 are disposed to be stacked on each other. That is, on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an arrangement of A X B (A and B are a natural number of 1 or more, respectively). Here, A is the number of process chambers 2600 provided in a row along the first direction 12, and B is the number of process chambers 2600 provided in a row along the third direction 16. When four or six process chambers 2600 are provided on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an arrangement of 2×2 or 3×2. The number of process chambers 2600 may increase or decrease. Unlike the above, the process chamber 2600 may be provided only on one side of the transfer chamber 2400. In addition, unlike the above, the process chamber 2600 may be provided in a single layer on one side and both sides of the transfer chamber 2400.

The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides a space in which the substrate W stays between the transfer chamber 2400 and the transfer frame 1400 before the substrate W is transferred. The buffer unit 2200 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided so as to be spaced apart from each other along the third direction 16. In the buffer unit 2200, a surface facing the transfer frame 1400 and a surface facing the transfer chamber 2400 are each opened.

The transfer frame 1400 transfers the substrate W between the carrier 1300 seated on the load port 1200 and the buffer unit 2200. An index rail 1420 and an index robot 1440 are provided on the transfer frame 1400. The index rail 1420 is provided in a longitudinal direction parallel to the second direction 14. The index robot 1440 is installed on the index rail 1420 and moves linearly in the second direction 14 along the index rail 1420. The index robot 1440 has a base 1441, a body 1442, and an index arm 1443. The base 1441 is installed to be movable along the index rail 1420. The body 1442 is coupled to the base 1441. The body 1442 is provided to be movable along the third direction 16 on the base 1441. In addition, the body 1442 is provided to be rotatable on the base 1441. The index arm 1443 is coupled to the body 1442 and is provided to be moved forward and backward with respect to the body 1442. A plurality of index arms 1443 are provided to be individually driven. The index arms 1443 are disposed to be stacked apart from each other along the third direction 16. Some of the index arms 1443 are used when transferring the substrate W from the process processing module 2000 to the carrier 1300, and other parts are the substrate W from the carrier 1300 to the process processing module 2000. Can be used when returning. This may prevent particles generated from the substrate W before the process treatment from adhering to the substrate W after the process treatment during the process of the index robot 1440 carrying in and carrying out the substrate W.

The transfer chamber 2400 transfers the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600. A guide rail 2420 and a main robot 2440 are provided in the transfer chamber 2400. The guide rail 2420 is disposed so that its longitudinal direction is parallel to the first direction 12. The main robot 2440 is installed on the guide rail 2420 and is linearly moved along the first direction 12 on the guide rail 2420. The main robot 2440 has a base 2441, a body 2442, and a main arm 2443. The base 2441 is installed to be movable along the guide rail 2420. The body 2442 is coupled to the base 2441. The body 2442 is provided to be movable along the third direction 16 on the base 2441. In addition, the body 2442 is provided to be rotatable on the base 2441. The main arm 2443 is coupled to the body 2442, which is provided to be movable forward and backward with respect to the body 2442. A plurality of main arms 2443 are provided to be individually driven. The main arms 2443 are disposed to be stacked apart from each other along the third direction 16. The main arm 2443 used when transferring the substrate W from the buffer unit 2200 to the process chamber 2600 and the substrate W used when transferring the substrate W from the process chamber 2600 to the buffer unit 2200 The main arms 2443 may be different from each other.

A substrate processing apparatus 10 that performs a cleaning process on the substrate W is provided in the process chamber 2600. The substrate processing apparatus 10 provided in each process chamber 2600 may have different structures depending on the type of cleaning process to be performed. Optionally, the substrate processing apparatus 10 in each process chamber 2600 may have the same structure. Optionally, the process chambers 2600 are divided into a plurality of groups, and the substrate processing apparatuses 10 provided to the process chambers 2600 belonging to the same group have the same structure and provided to the process chambers 2600 belonging to different groups. The substrate processing apparatuses 10 may have different structures. For example, when the process chamber 2600 is divided into two groups, a first group of process chambers 2600 is provided on one side of the transfer chamber 2400, and a second group of process chambers 2600 is provided on the other side of the transfer chamber 2400. Process chambers 2600 may be provided. Optionally, a first group of process chambers 2600 may be provided at a lower layer on one side and the other side of the transfer chamber 2400, and a second group of process chambers 2600 may be provided at an upper layer. The process chamber 2600 of the first group and the process chamber 2600 of the second group may be classified according to the type of chemical used or the type of cleaning method, respectively.

2 is a plan view of the substrate processing apparatus of FIG. 1. 3 is a cross-sectional view of the substrate processing apparatus of FIG. 1.

2 and 3, the substrate processing apparatus 60 includes a chamber 800, a processing container 100, a support unit 200, a chemical liquid supply member 300, a process exhaust part 500, and an elevating member ( 600), and a heating unit.

The chamber 800 provides an enclosed interior space. A fan filter unit 810 is installed above the chamber 800. The fan filter unit 810 generates a downward airflow in the chamber 800.

The fan filter unit 810 includes a filter and an air supply fan. The filter and air supply fan can be modularized into one unit. The fan filter unit 810 filters outside air and supplies it into the chamber 800. The outside air passes through the fan filter unit 810 and is supplied into the chamber 800 to form a downward airflow.

The chamber 800 is divided into a process area 816 and a maintenance area 818 by a horizontal partition wall 814. Although only a part is shown in the drawing, in the maintenance area 818, the discharge lines 141, 143, and 145 connected to the processing container 100, the exhaust line 510, the driving unit of the lifting unit, the first nozzle 310 of the chemical solution supply member 300 ), and a supply line and the like are located. The maintenance area 818 is isolated from the process area 816 in which the substrate w is processed.

The processing container 100 has a cylindrical shape with an open top. The processing container 100 provides a processing space for processing the substrate w. The open upper surface of the processing container 100 is provided as a passage for carrying out and carrying in the substrate w. The support unit 200 is located in the process space. The support unit 200 heats and rotates the substrate w while supporting the substrate w during the process.

The processing vessel 100 provides a lower space to which the exhaust duct 190 is connected to the lower end so that forced exhaust is performed. In the processing container 100, first, second, and third annular recovery bins 110, 120, and 130 are arranged in multiple stages for introducing and inhaling chemicals and gases scattered on the rotating substrate w.

The annular first, second, and third collection bins 110, 120, and 130 have exhaust ports H communicating with one common annular space.

Specifically, the first to third collection cylinders 110, 120, and 130 each have a bottom surface having an annular ring shape and a side wall extending from the bottom surface and having a cylindrical shape. The second recovery bin 120 surrounds the first recovery bin 110 and is located spaced apart from the first recovery bin 110. The third recovery bin 130 surrounds the second recovery bin 120 and is located spaced apart from the second recovery bin 120.

The first to third recovery bins 110, 120, and 130 provide first to third recovery spaces RS1, RS2, and RS3 into which the treatment liquid scattered from the substrate w and the airflow including fume flows in. . The first recovery space RS1 is provided by the first recovery container 110. The second recovery space RS2 is provided in a space spaced between the first recovery bin 110 and the second recovery bin 120. The third recovery space RS3 is provided by a space between the second recovery container 120 and the third recovery container 130.

Each upper surface of the first to third collection containers 110, 120, and 130 has a central portion open. The first to third collection bins 110, 120, and 130 are provided as inclined surfaces in which the distance from the connected sidewall to the opening portion increases gradually. The processing liquid scattered from the substrate w flows into the recovery spaces RS1, RS2, and RS3 along the upper surfaces of the first to third recovery containers 110, 120, and 130.

The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 141. The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 143. The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 145.

The process exhaust unit 500 provides exhaust inside the processing container 100. In one embodiment, the process exhaust unit 500 is for providing an exhaust pressure to a recovery container for recovering a treatment liquid among the first to third recovery containers 110, 120, and 130 during processing. The process exhaust unit 500 includes an exhaust line 510 and a damper 520. The exhaust line 510 is connected to the exhaust duct 190. The exhaust line 510 receives exhaust pressure from an exhaust pump (not shown) and is connected to the main exhaust line buried in the floor space of the semiconductor production line.

The processing container 100 is coupled with an elevating unit 600 that changes the vertical position of the processing container 100. The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 is moved up and down, the relative height of the processing container 100 with respect to the support unit 200 is changed.

The lifting unit 600 has a bracket 612, a moving shaft 614, and a driver 616. The bracket 612 is installed on the outer wall of the processing container 100. A moving shaft 614 that is moved in the vertical direction by the driver 616 is coupled to the bracket 612. When the substrate w is loaded onto the spin head 210 or unloaded from the spin head 210, the processing vessel 100 descends so that the spin head 210 protrudes from the top of the processing vessel 100. During the process, the height of the processing container 100 is adjusted so that the processing liquid can be introduced into the predetermined collection bins 110, 120, and 130 according to the type of the processing liquid supplied to the substrate w. The relative vertical position between the processing container 100 and the substrate w is changed. Accordingly, the treatment vessel 100 may have different types of the treatment liquid and the polluted gas recovered for each of the recovery spaces RS1, RS2, and RS3.

According to an embodiment, the substrate processing apparatus 60 vertically moves the processing vessel 100 to change a relative vertical position between the processing vessel 100 and the support unit 200. The substrate processing apparatus 60 may vertically move the support unit 200 to change a relative vertical position between the processing container 100 and the support unit 200.

The chemical solution supply member 300 discharges a high-temperature chemical for etching the surface of the substrate w. According to an example, the chemical may be sulfuric acid, phosphoric acid, or a mixture of sulfuric acid and phosphoric acid.

The chemical solution supply member 300 includes a chemical solution nozzle member 310 and a supply unit 320.

The chemical liquid nozzle member 310 includes a nozzle 311, a nozzle arm 313, a support rod 315, and a nozzle driver 317. The nozzle 311 receives phosphoric acid through the supply unit 320. The nozzle 311 discharges phosphoric acid to the surface of the substrate w. The nozzle arm 313 is an arm provided with a length in one direction. The nozzle arm 313 is equipped with a nozzle 311 at its tip. The nozzle arm 313 supports the nozzle 311. A support rod 315 is mounted at the rear end of the nozzle arm 313. The support rod 315 is located under the nozzle arm 313. The support rod 315 is disposed perpendicular to the nozzle arm 313. The nozzle driver 317 is provided at the lower end of the support rod 315. The nozzle driver 317 rotates the support rod 315 about the longitudinal axis of the support rod 315. The rotation of the support rod 315 causes the nozzle arm 313 and the nozzle 311 to swing around the support rod 315 along the axis. The nozzle 311 may swing between the outside and the inside of the processing container 210. The nozzle 311 may swing a section between the center of the substrate w and the edge region to discharge phosphoric acid.

Although not shown, the substrate processing apparatus 60 may include supply members for injecting various processing fluids to the substrate w in addition to the chemical solution supply member 300.

4 is a cross-sectional view of the support unit of FIG. 3. 2 to 4, the support unit 200 is installed inside the processing container 100.

The support unit 200 includes a chuck stage 210, a quartz window 220, a rotating part 230, and a back nozzle part 240.

The chuck stage 210 has a circular upper surface. The chuck stage 210 is coupled to the rotating unit 230 and rotated. The chuck stage 210 includes a chucking pin 212 and a support pin 214.

Chucking pins 212 are installed at the edges of the chuck stage 210. The chucking pins 212 are provided to penetrate the quartz window 220 and protrude upward from the quartz window 220. The chucking pins 212 align the substrate w so that the substrate w supported by the plurality of support pins 214 is placed in a proper position. In addition, during the process, the chucking pins 212 are in contact with the side of the substrate w to prevent the substrate w from being separated from the original position. The support pins 214 support the substrate w.

The quartz window 220 is provided between the first heating unit 250 and the substrate w. The quartz window 220 protects the lamps 252. The quartz window 220 may be made of a transparent material. The quartz window 220 may be rotated together with the chuck stage 210. The quartz window 220 includes support pins 224. The support pins 224 are spaced apart at a predetermined distance at the edge of the upper surface of the quartz window 220 and are arranged in a predetermined arrangement. The support pins 224 are provided to protrude upward from the quartz window 220. The support pins 224 support the lower surface of the substrate w so that the substrate w is supported in a state spaced from the quartz window 220 in the upward direction.

The rotating part 230 has a hollow shape and is coupled with the chuck stage 210 to rotate the chuck stage 210.

The back nozzle part 240 includes a nozzle body 242 and a chemical liquid injection part 244. The back nozzle part 240 sprays a chemical solution onto the back surface of the substrate w. The chemical injection part 244 is located at the center of the chuck stage 210 and the quartz window 220. The nozzle body 242 is installed through the hollow rotary part 230. Although not shown, a chemical liquid movement line, a gas supply line, and a purge gas supply line may be provided inside the nozzle body 242. The chemical liquid transfer line supplies an etchant for etching treatment of the back surface of the substrate w to the chemical liquid injection unit 244. The gas supply line supplies nitrogen gas to the rear surface of the substrate w to adjust the etching uniformity. The purge gas supply line supplies nitrogen purge gas to prevent the etchant from penetrating between the quartz window and the nozzle body.

The heating unit includes a first heating unit 250 and a second heating unit 900.

The first heating unit 250 is provided inside the support unit 200. The first heating unit 250 is provided on the chuck stage 210. The first heating unit 250 may be subdivided into a plurality of concentric zones. Each zone is provided with lamps 252 capable of individually heating each zone. For example, the first heating unit 250 may heat the substrate w to 150-250°C. The first heating unit 250 may have a different diameter and may be provided as a lamp 252. The first heating units 250 are disposed to be spaced apart from each other. For example, the lamp 252 may be a plurality of IR lamps 252 provided in a ring shape. Although six IR lamps 252 are shown in the embodiment of the present invention, the number of IR lamps can be added or subtracted depending on the desired temperature or controlled degree. The first heating unit 250 may monotonically control the temperature according to the radius of the substrate w during the process by controlling the temperature of each individual zone. A temperature sensor assembly 270 for individually controlling the temperature of each lamp 252 is installed on the reflective plate 260.

In one embodiment, in a structure in which the lamps 252 are rotated together with the chuck stage 210, a method of supplying power to the first heating unit 250 may use a slip ring.

A reflective plate 260 may be provided between the first heating unit 250 and the chuck stage 210 so as to transfer heat generated from the lamps 252 to the top. The reflective plate 260 may be supported by a nozzle body installed through the central space of the rotating part 230. The reflective plate 260 is formed to extend downwardly at the inner end. The reflective plate 260 includes a support end supported by the rotating part 230 through a bearing. The reflective plate 260 is provided in a fixed manner that does not rotate together with the chuck stage 210.

Although not shown, cooling fins may be installed in the reflective plate 260 for heat dissipation. In order to suppress heat generation of the reflective plate 260, a cooling gas may be configured to flow through the bottom of the reflective plate 260.

The temperature sensor assemblies 270 are installed in a line on a straight line of the reflective plate 260 to measure the temperature of each of the lamps 252.

The second heating unit 900 is positioned above the support unit 200 to heat a specific area of the substrate. The specific region of the substrate may be defined as a region having a relatively low temperature distribution in the substrate heated by the first heating unit. In the present embodiment, the edge region of the substrate is described as a specific region, but is not limited thereto.

5 is a diagram for explaining a second heating unit, and FIG. 6 is a schematic cross-sectional view showing a state of heating an edge region of a substrate using a second heating unit.

5 to 6, according to this embodiment, the second heating unit 900 transmits light generated from each of the three light sources 910a to 910c and the three light sources 910a to 910c. It includes an optical fiber module 920 that is connected to the optical fiber module 920, a light irradiation unit 930 that is connected to the optical fiber module 920 to irradiate light to a predetermined area of the substrate, and a driver 940.

The three light sources 910a to 910c are installed in the enclosure 990. The enclosure may be provided outside the chamber 800. For example, the light sources 910a to 910c may generate light having different wavelength bands. Light of different wavelength bands is collected through the optical fiber of the optical fiber module and transmitted to the substrate.

The optical fiber module 920 is characterized in that it is provided as an optical fiber 921 composed of one inlet-side optical fiber 922a to 922c and the outlet-side optical fiber 924 provided equal to the number of light sources. Each of the inlet-side optical fibers 922a to 922c has an inlet 923 through which light generated from a light source is incident, and the outlet-side optical fiber 924 has a single outlet 925 through which light is emitted to the light irradiation unit 930. Include. In the drawing, the dotted line represents the outer shell surrounding the optical fiber 921. As described above, in the optical fiber module 920, one exit optical fiber 924 is separated into three entry optical fibers 922a to 922c at an arbitrary point. As described above, the optical fiber module may connect optical fibers to each of a plurality of LED light sources, and transmit light by condensing the optical fibers from the plurality of optical fibers into one optical fiber.

The light irradiation unit 930 may stably irradiate light transmitted through an optical fiber module to a specific area of the substrate including optical components such as one or more lenses.

The driver 940 moves the light irradiation unit 930 to a process position located above the substrate and a standby position located outside the processing container 200.

For example, the driver 940 includes an arm 943, a support rod 945, and a driving unit 947. The arm 943 is provided with an elongated length in one direction. The arm 943 is equipped with a light irradiation unit 930 at the tip. The arm 943 supports the light irradiation unit 930. A support rod 945 is mounted at the rear end of the arm 943. The support rod 945 is disposed perpendicular to the arm 943. The driving unit 947 is provided at the lower end of the support rod 945. The drive unit 947 rotates the support rod 945 about the longitudinal axis of the support rod 945. As the support rod 945 rotates, the arm 943 and the light irradiation unit 930 swing the support rod 945 along the axis. The light irradiation unit 930 may swing between the outer (standby position) and the inner side (process position) of the processing container 210. The light irradiation unit 930 may move to a specific area of the substrate w and irradiate a laser (light energy). During the process of the substrate w, the second heating unit 900 may heat the edge region (a specific region) of the substrate w to increase the temperature of the chemical solution (the temperature of the substrate).

When the substrate w is treated with the chemical solution, the chemical solution is supplied to the central region of the substrate w. The supplied chemical solution moves to the edge region of the substrate w and processes the substrate w. In this process, the temperature of the chemical solution decreases as it moves to the edge region from the initial temperature in the central region. The decrease in the temperature of the chemical solution causes the etch rate to be lowered when processing the substrate (w).

Accordingly, by heating the substrate w with the first heating unit that heats the substrate w under the substrate w, the temperature of the chemical solution can be increased to make the etch rate uniform. However, the effect of the first heating unit 250 is lower in the edge region of the substrate w than in other regions of the substrate w. Accordingly, the temperature drop of the chemical solution may be prevented by heating the edge region of the substrate w through the second heating unit 900. An increase in temperature of the edge region has an effect of increasing the etch rate of the edge region of the substrate w.

Although not shown, the light irradiation unit 930 of the second heating unit may be located on the upper wall of the chamber 800 facing the edge region of the substrate w.

The detailed description above is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the disclosed contents, and/or the skill or knowledge of the art. The above-described embodiments describe the best state for implementing the technical idea of the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Therefore, the detailed description of the invention is not intended to limit the invention to the disclosed embodiment. In addition, the appended claims should be construed as including other embodiments.

60: substrate processing apparatus 100: processing vessel
200: support unit 250: first heating unit
252: lamp 260: reflective plate
270: temperature sensor assembly 900: second heating unit

Claims (12)

In the substrate processing apparatus:
A container having an open upper processing space;
A support unit capable of supporting and rotating a substrate positioned in the processing space;
A first heating unit installed in the support unit to heat the substrate;
A second heating unit positioned above the support unit to heat a predetermined area of the substrate; And
Including a fluid supply unit for supplying a fluid to the substrate placed on the support unit,
The second heating unit,
A plurality of light sources;
An optical fiber module for transmitting light generated from each of the light sources;
It includes a light irradiation unit connected to the optical fiber module to irradiate light to a predetermined area of the substrate,
The optical fiber module
Entrance-side optical fibers having a plurality of inlets through which light generated from each of the light sources is incident; And
A substrate processing apparatus comprising an exit optical fiber connected to the entrance optical fibers and having a single exit through which light is emitted to the light irradiation unit. The method of claim 1,
The light sources generate light having different wavelength bands,
The optical fiber module is a substrate processing apparatus that collects lights of different wavelength bands into one and provides them to a substrate. delete The method according to claim 1 or 2,
The light irradiation unit
A substrate processing apparatus comprising optical components such as one or more lenses. The method of claim 2,
The light sources are
A substrate processing apparatus provided in an enclosure installed outside the substrate processing apparatus. The method according to claim 1 or 2,
The second heating unit
A substrate processing apparatus further comprising a driver for moving the light irradiation unit to a process position located above the substrate and a standby position located outside the container. The method of claim 2,
The first heating unit
It is provided to be heated from the center area of the substrate to the edge area,
The second heating unit
A substrate processing apparatus provided so as to be able to heat an edge region of a substrate. The method of claim 2,
The second heating unit faces an edge region of the substrate and is provided on an upper wall of the container. In the method of processing a substrate using the apparatus of claim 1,
When processing the substrate,
The first heating unit heats the entire area of the substrate under the substrate,
The second heating unit heats an edge region of the substrate above the substrate;
The second heating unit
A substrate processing method in which light generated from each of the light sources is collected into one and irradiated to the edge of the substrate. The method of claim 9,
The light sources generate light having different wavelength bands,
The second heating unit
A substrate processing method in which light of different wavelength bands generated from each of the light sources is collected as one through the optical fiber and irradiated to the edge of the substrate. In the substrate processing apparatus:
A support unit supporting the substrate;
A heating unit positioned above the support unit to heat a predetermined area of the substrate;
The heating unit,
A plurality of light sources for generating light having different wavelength bands;
An optical fiber module for collecting and transmitting light of different wavelength bands generated from each of the light sources into one; And
A substrate processing apparatus comprising a light irradiation unit connected to the optical fiber module to irradiate light of different wavelength bands collected into a predetermined area of the substrate. The method of claim 11,
The optical fiber module
Entrance-side optical fibers having a plurality of entrances into which light of different wavelength bands generated from each of the light sources is incident; And
A substrate processing apparatus comprising an exit optical fiber connected to the entrance optical fibers and having a single exit through which light is emitted to the light irradiation unit.

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