KR102208753B1 - Substrate supporting unit and substrate processing apparatus using the same - Google Patents

Abstract

The present invention relates to a substrate support unit. A substrate support unit according to an embodiment of the present invention includes a chuck stage having an inner space defined by a base surface and sidewalls; A heating unit provided in the inner space; And a quartz window covering the inner space and on which a substrate is mounted on an upper surface. The heating unit includes a base plate formed in a disk shape having an opening in the center; And a heating unit provided on the base plate and having heating light sources emitting light energy, and reflecting light energy lost in a lateral direction of the chuck stage toward the substrate.

Description

A substrate support unit and a substrate processing device having the same TECHNICAL FIELD

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs a process while heating a substrate during a substrate processing process.

In general, the process of processing a glass substrate or wafer in a flat panel display device manufacturing or semiconductor manufacturing process includes a photoresist coating process, a developing process, an etching process, an ashing process, etc. Various processes are carried out.

In each process, a wet cleaning process using chemical or deionized water and a drying process to dry the chemical or pure water remaining on the substrate surface to remove various contaminants attached to the substrate ) The process is carried out.

Recently, an etching process for selectively removing a silicon nitride film and a silicon oxide film has been performed using an aqueous chemical solution used at a high temperature such as sulfuric acid or phosphoric acid.

In a substrate processing apparatus using a high-temperature chemical aqueous solution, a substrate heating apparatus that heats a substrate using an IR lamp is applied and utilized in order to improve the etch rate.

However, in the conventional substrate heating apparatus, IR lamps are arranged at equal intervals, the size of the outermost lamp is smaller than that of the substrate, and the innermost lamp has a size determined in consideration of the center nozzle. Accordingly, as shown in the table of FIG. 1, there occurs a problem that the light intensity distribution in the substrate drops sharply around the edge and the center.

An object of the present invention is to provide a substrate heating unit capable of uniformly heating a substrate during a substrate processing process, and a substrate processing apparatus having the same.

An object of the present invention is to provide a substrate heating unit and a substrate processing apparatus having the same, capable of increasing light concentration in the vicinity of the edge and center of a substrate during a substrate processing process.

The problem to be solved by the present invention is not limited thereto, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, a chuck stage having an inner space defined by a base surface and sidewalls; A heating unit provided in the inner space; And a quartz window covering the inner space and on which a substrate is mounted on an upper surface. The heating unit includes a base plate formed in a disk shape having an opening in the center; And a heating unit provided on the base plate and having heating light sources emitting light energy, wherein the quartz window includes a reflective member for reflecting light energy lost in a lateral direction of the quartz window toward the substrate. A substrate support device may be provided.

In addition, the reflective member may be provided on an inner edge of the quartz window surrounding the heating part.

In addition, the inner side surface of the edge may be formed to be inclined to be closer to the center from the top to the bottom.

In addition, the inner surface of the edge may be concave toward the edge of the substrate.

In addition, the reflective member may be formed of a reflective plate or a reflective coating film.

In addition, a rotating unit having a hollow shape, coupled with the chuck stage to rotate the chuck stage; And a back nozzle penetrating the inside of the rotating part, provided at the center of the upper portion of the chuck stage, and spraying the processing liquid to the rear surface of the substrate.

In addition, the heating light sources may be composed of ring-shaped lamps arranged concentrically at different radial distances with respect to the center of the base plate.

In addition, the base plate may be formed of a reflector that reflects light energy of the lamps upward.

In addition, the base plate may include a reflective protrusion positioned under the lamp and protruding in a protruding shape to spread light energy radiated from the lamp.

In addition, the reflective protrusion may have a triangular cross-section whose cross-section becomes wider as the distance from the lamp increases.

In addition, the base plate may further include an inclined reflective surface provided at a central portion of the base plate so as to increase the concentration of light to the central region of the substrate.

In addition, the base plate may further include a reflective surface having a convex curved surface provided at a central portion of the base plate so as to increase the concentration of light to the central region of the substrate.

In addition, the reflective member may be provided on an inner edge of the quartz window surrounding the heating unit, and may have a curved reflective surface to condense light energy toward a target, which is an arbitrary point in the edge section of the substrate.

In addition, the curved surface of the reflective member may be provided in a partial shape of an ellipse.

In addition, the curved surface of the reflective member may be shaped by reflecting an equation of an ellipse so that a distance between the light emitting point of the heating light source and the target becomes the focal point of the ellipse.

In addition, the target may be a point close to the center of the pattern section excluding the section in which the pattern is not formed among the edge sections of the substrate.

According to another aspect of the present invention, a processing container with an open top; A substrate support unit positioned in the processing container and supporting a substrate; A processing liquid supply unit for supplying a processing liquid to a substrate placed on the substrate support unit; A heating unit provided in the substrate support unit and emitting light energy for heating the substrate, wherein the substrate support unit comprises: a chuck stage having an inner space defined by a base surface and sidewalls; A quartz window covering the inner space and on which a substrate is mounted on an upper surface; And a reflective member provided in the quartz window and reflecting light energy lost in a lateral direction of the quartz window toward the substrate.

In addition, the reflective member may be provided on an inner edge of the quartz window surrounding the heating part.

In addition, the inner side surface of the edge may be formed to be inclined so as to be closer to the center from the top to the bottom, or may be formed to be concave toward the edge of the substrate.

In addition, the heating unit includes: a heating unit provided in the substrate supporting unit and having ring-shaped lamps arranged concentrically at different radial distances with respect to the center of the substrate supporting unit; And a reflective plate positioned under the lamp and having a reflective protrusion protruding in the form of a protrusion to spread light energy radiated from the lamp.

In addition, the substrate support unit may include a rotating part having a hollow shape and coupled to the chuck stage to rotate the chuck stage; And a back nozzle penetrating the inside of the rotating part and provided at the center of the upper portion of the chuck stage and spraying a processing liquid to the rear surface of the substrate, wherein the reflective protrusion has a ring shape having the same diameter as the lamp, and the lamp It may have a triangular cross-section whose cross-section becomes wider as the distance increases from.

In addition, the reflective plate may further include an inclined reflective surface provided at a central portion of the reflective plate so as to increase the concentration of light to the central region of the substrate.

In addition, the reflective member may be provided on an inner edge of the quartz window surrounding the heating unit, and may have a curved reflective surface to condense light energy toward a target, which is an arbitrary point in the edge section of the substrate.

In addition, the target may be a point close to the center of the pattern section excluding the section in which the pattern is not formed among the edge sections of the substrate.

According to an embodiment of the present invention, by applying a reflector structure that spreads light from a lamp, it has a special effect of improving the temperature distribution of the substrate.

According to an embodiment of the present invention, since the light concentration near the center and the edge of the substrate is increased, the substrate processing apparatus has a special effect of improving the etch rate.

The effects of the present invention are not limited to the above-described effects, and effects that are not mentioned will be clearly understood by those of ordinary skill in the art from the present specification and the accompanying drawings.

1 is a table showing a light intensity distribution diagram in a conventional substrate heating apparatus.
2 is a plan view schematically showing an example of a substrate processing facility provided with a substrate processing apparatus according to an embodiment of the present invention.
3 is a plan view of the substrate processing apparatus of FIG. 2.
4 is a cross-sectional view of the substrate processing apparatus of FIG. 2.
5 is a cross-sectional view showing an embodiment of the substrate support unit and the heating unit of FIG. 3.
6 is an enlarged view showing a part of the heating unit of FIG. 5.
7 is a view showing a modified example of the substrate support unit.
8A and 8B schematically illustrate a method of designing the reflective member shown in FIG. 7.
9 is a description of a position of a target in which light is collected as described above.
10 is a view showing a modified example of the reflective member.

In the present invention, various transformations may be applied and various embodiments may be provided, and specific embodiments will be illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to a specific embodiment, it should be understood to include all conversions, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, when it is determined that a detailed description of a related known technology may obscure the subject matter of the present invention, a detailed description thereof will be omitted.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In the present application, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, but one or more other features. It is to be understood that the presence or addition of elements or numbers, steps, actions, components, parts, or combinations thereof, does not preclude in advance.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are used only for the purpose of distinguishing one component from another component.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, identical or corresponding components are assigned the same reference numerals and overlapped with them. Description will be omitted.

2 is a plan view schematically showing the substrate processing facility 1 of the present invention.

Referring to FIG. 2, the substrate processing facility 1 includes an index module 1000 and a process processing module 2000. The index module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, the transfer frame 1400, and the process processing module 2000 are sequentially arranged in a line. Hereinafter, a direction in which the load port 1200, the transfer frame 1400, and the process processing module 2000 are arranged is referred to as a first direction 12. And when viewed from above, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction. It is called (16).

A carrier 1300 in which the substrate W is accommodated is mounted on the load port 1200. A plurality of load ports 1200 are provided, and they are arranged in a row along the second direction 14. In FIG. 1, it is shown that four load ports 1200 are provided. However, the number of load ports 1200 may increase or decrease according to conditions such as process efficiency and footprint of the process processing module 2000. A slot (not shown) provided to support the edge of the substrate W is formed in the carrier 1300. A plurality of slots are provided in the third direction 16. The substrates W are positioned in the carrier 1300 to be stacked in a state spaced apart from each other along the third direction 16. As the carrier 1300, a Front Opening Unified Pod (FOUP) may be used.

The process processing module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The transfer chamber 2400 is disposed in a longitudinal direction parallel to the first direction 12. Process chambers 2600 are disposed on one side and the other side of the transfer chamber 2400 along the second direction 14, respectively. The process chambers 2600 located on one side of the transfer chamber 2400 and the process chambers 2600 located on the other side of the transfer chamber 2400 are provided to be symmetrical with respect to the transfer chamber 2400. Some of the process chambers 2600 are disposed along the longitudinal direction of the transfer chamber 2400. In addition, some of the process chambers 2600 are disposed to be stacked on each other. That is, on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an arrangement of A X B (A and B are a natural number of 1 or more, respectively). Here, A is the number of process chambers 2600 provided in a row along the first direction 12, and B is the number of process chambers 2600 provided in a row along the third direction 16. When four or six process chambers 2600 are provided on one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an arrangement of 2×2 or 3×2. The number of process chambers 2600 may increase or decrease. Unlike the above, the process chamber 2600 may be provided only on one side of the transfer chamber 2400. In addition, unlike the above, the process chamber 2600 may be provided in a single layer on one side and both sides of the transfer chamber 2400.

The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides a space in which the substrate W stays between the transfer chamber 2400 and the transfer frame 1400 before the substrate W is transferred. The buffer unit 2200 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided so as to be spaced apart from each other along the third direction 16. In the buffer unit 2200, a surface facing the transfer frame 1400 and a surface facing the transfer chamber 2400 are each opened.

The transfer frame 1400 transfers the substrate W between the carrier 1300 seated on the load port 1200 and the buffer unit 2200. An index rail 1420 and an index robot 1440 are provided on the transfer frame 1400. The index rail 1420 is provided in a longitudinal direction parallel to the second direction 14. The index robot 1440 is installed on the index rail 1420 and moves linearly in the second direction 14 along the index rail 1420. The index robot 1440 has a base 1441, a body 1442, and an index arm 1443. The base 1441 is installed to be movable along the index rail 1420. The body 1442 is coupled to the base 1441. The body 1442 is provided to be movable along the third direction 16 on the base 1441. In addition, the body 1442 is provided to be rotatable on the base 1441. The index arm 1443 is coupled to the body 1442 and is provided to be moved forward and backward with respect to the body 1442. A plurality of index arms 1443 are provided to be individually driven. The index arms 1443 are disposed to be stacked apart from each other along the third direction 16. Some of the index arms 1443 are used when transferring the substrate W from the process processing module 2000 to the carrier 1300, and others are used to transfer the substrate W from the carrier 1300 to the process processing module 2000. Can be used when returning. This may prevent particles generated from the substrate W before the process treatment from adhering to the substrate W after the process treatment during the process of the index robot 1440 carrying in and carrying out the substrate W.

The transfer chamber 2400 transfers the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600. A guide rail 2420 and a main robot 2440 are provided in the transfer chamber 2400. The guide rail 2420 is disposed so that its longitudinal direction is parallel to the first direction 12. The main robot 2440 is installed on the guide rail 2420 and is linearly moved along the first direction 12 on the guide rail 2420. The main robot 2440 has a base 2441, a body 2442, and a main arm 2443. The base 2441 is installed to be movable along the guide rail 2420. The body 2442 is coupled to the base 2441. The body 2442 is provided to be movable along the third direction 16 on the base 2441. In addition, the body 2442 is provided to be rotatable on the base 2441. The main arm 2443 is coupled to the body 2442, which is provided to be movable forward and backward with respect to the body 2442. A plurality of main arms 2443 are provided to be individually driven. The main arms 2443 are disposed to be stacked apart from each other along the third direction 16. The main arm 2443 used when transferring the substrate W from the buffer unit 2200 to the process chamber 2600 and the substrate W used when transferring the substrate W from the process chamber 2600 to the buffer unit 2200 The main arms 2443 may be different from each other.

A substrate processing apparatus 10 that performs a cleaning process on the substrate W is provided in the process chamber 2600. The substrate processing apparatus 10 provided in each process chamber 2600 may have different structures depending on the type of cleaning process to be performed. Optionally, the substrate processing apparatus 10 in each process chamber 2600 may have the same structure. Optionally, the process chambers 2600 are divided into a plurality of groups, and the substrate processing apparatuses 10 provided to the process chambers 2600 belonging to the same group have the same structure and provided to the process chambers 2600 belonging to different groups. The substrate processing apparatuses 10 may have different structures. For example, when the process chamber 2600 is divided into two groups, a first group of process chambers 2600 are provided on one side of the transfer chamber 2400, and a second group of process chambers 2600 is provided on the other side of the transfer chamber 2400. Process chambers 2600 may be provided. Optionally, a first group of process chambers 2600 may be provided at a lower layer on one side and the other side of the transfer chamber 2400, and a second group of process chambers 2600 may be provided at an upper layer. The process chamber 2600 of the first group and the process chamber 2600 of the second group may be classified according to the type of chemical used or the type of cleaning method, respectively.

In the following embodiments, an apparatus for cleaning the substrate W using processing fluids such as high temperature sulfuric acid, alkaline chemical, acidic chemical, rinse, and drying gas will be described as an example. However, the technical idea of the present invention is not limited thereto, and may be applied to various types of devices that perform processes while rotating the substrate W, such as an etching process.

3 is a plan view of the substrate processing apparatus of FIG. 2, and FIG. 4 is a cross-sectional view of the substrate processing apparatus of FIG. 2.

3 and 4, the substrate processing apparatus 10 includes a chamber 800, a processing vessel 100, a substrate support unit 200, a heating unit 280, a processing liquid supply unit 300, and a process exhaust unit. 500 and an elevating unit 600.

The chamber 800 provides an enclosed interior space. An airflow supply unit 810 is installed at the top. The airflow supply unit 810 forms a downward airflow in the chamber 800.

The airflow supply unit 810 filters high-humidity outdoor air and supplies it into the chamber. The high-humidity outdoor air passes through the airflow supply unit 810 and is supplied into the chamber to form a downward airflow. The descending airflow provides a uniform airflow on the upper portion of the substrate W, and contaminants generated in the process of treating the surface of the substrate W by the processing fluid are removed together with the air and the recovery bins 110, 120, 130 of the processing vessel 100 ) Through the process exhaust unit 500.

The chamber 800 is divided into a process area 816 and a maintenance area 818 by a horizontal partition wall 814. The processing vessel 100 and the substrate support unit 200 are positioned in the process region 816. In the maintenance area 818, in addition to the discharge lines 141, 143, and 145 connected to the processing vessel 100 and the exhaust line 510, a driving unit of the lifting unit 600, a driving unit connected to the processing liquid supply unit 300, and a supply line The back is located. The maintenance area 818 is isolated from the processing area 816.

The processing container 100 has a cylindrical shape with an open top, and provides a processing space for processing the substrate W. The open upper surface of the processing container 100 is provided as a passage for carrying out and carrying in the substrate W. The substrate support unit 200 is located in the process space. The substrate support unit 200 rotates the substrate W while supporting the substrate W during the process.

The processing vessel 100 provides a lower space to which the exhaust duct 190 is connected to the lower end so that forced exhaust is performed. In the processing vessel 100, first to third collection vessels 110, 120 and 130 for introducing and inhaling the processing liquid and gas scattered on the rotating substrate W are arranged in multiple stages.

The first to third annular recovery bins 110, 120, and 130 have exhaust ports H communicating with one common annular space.

Specifically, the first to third collection bins 110, 120, and 130 each include a bottom surface having an annular ring shape and a side wall extending from the bottom surface and having a cylindrical shape. The second recovery container 120 surrounds the first recovery container 110 and is located spaced apart from the first recovery container 110. The third collection bottle 130 surrounds the second collection bottle 120 and is spaced apart from the second collection bottle 120.

The first to third recovery bins 110, 120, and 130 provide first to third recovery spaces RS1, RS2, and RS3 into which the treatment liquid scattered from the substrate W and the air flow including fume are introduced. . The first recovery space RS1 is defined by the first recovery container 110, and the second recovery space RS2 is defined by a space between the first recovery container 110 and the second recovery container 120. , The third collection space RS3 is defined by a space between the second collection tank 120 and the third collection tank 130.

Each upper surface of the first to third collection containers 110, 120, and 130 has a central portion open. The first to third collection bins 110, 120, and 130 are formed of inclined surfaces in which the distance from the connected sidewall to the opening portion increases gradually. The processing liquid scattered from the substrate W flows into the recovery spaces RS1, RS2, and RS3 along the upper surfaces of the first to third recovery containers 110, 120, and 130.

The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 141. The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 143. The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 145.

The processing liquid supply unit 300 discharges a high-temperature chemical for etching the surface of the substrate W. For example, the treatment liquid may be sulfuric acid, phosphoric acid, or a mixture of sulfuric acid and phosphoric acid.

The treatment liquid nozzle member 310 includes a nozzle 311, a nozzle arm 313, a support rod 315, and a nozzle driver 317. The nozzle 311 receives the treatment liquid through the supply unit 320. The nozzle 311 discharges the processing liquid to the surface of the substrate W. The nozzle arm 313 is an arm that is provided with a length in one direction, and a nozzle 311 is mounted at the tip. The nozzle arm 313 supports the nozzle 311. A support rod 315 is mounted at the rear end of the nozzle arm 313. The support rod 315 is located under the nozzle arm 313. The support rod 315 is disposed perpendicular to the nozzle arm 313. The nozzle driver 317 is provided at the lower end of the support rod 315. The nozzle driver 317 rotates the support rod 315 about the longitudinal axis of the support rod 315. The rotation of the support rod 315 causes the nozzle arm 313 and the nozzle 311 to swing around the support rod 315 along the axis. The nozzle 311 may swing between the outside and the inside of the processing container 100. In addition, the nozzle 311 may swing a section between the center and the edge of the substrate W and discharge the processing liquid.

The process exhaust unit 500 is responsible for exhausting the interior of the processing container 100. For example, the process exhaust unit 500 is for providing an exhaust pressure (suction pressure) to a recovery container for recovering a treatment liquid from among the first to third recovery containers 110, 120, and 130 during a process. The process exhaust unit 500 includes an exhaust line 510 and a damper 520 connected to the exhaust duct 190. The exhaust line 510 receives exhaust pressure from an exhaust pump (not shown) and is connected to the main exhaust line buried in the floor space of the semiconductor production line.

On the other hand, the processing container 100 is coupled with an elevating unit 600 that changes the vertical position of the processing container 100. The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 is moved up and down, the relative height of the processing container 100 with respect to the substrate supporting unit 200 is changed.

The lifting unit 600 includes a bracket 612, a moving shaft 614, and a driver 616. The bracket 612 is fixedly installed on the outer wall of the processing container 100. A moving shaft 614 that is moved in the vertical direction by a driver 616 is fixedly coupled to the bracket 612. When the substrate W is loaded onto the chuck stage 210 or unloaded from the chuck stage 210, the processing container 100 is lowered so that the chuck stage 210 protrudes above the processing container 100. In addition, when the process proceeds, the height of the processing vessel 100 is adjusted so that the processing liquid can be introduced into the preset collection bins 110, 120, 130 according to the type of the processing liquid supplied to the substrate W. . The relative vertical position between the processing container 100 and the substrate W is changed. The processing vessel 100 may have different types of processing liquid and contaminated gas recovered for each of the recovery spaces RS1, RS2, and RS3. According to an embodiment, the lifting unit 600 vertically moves the processing container 100 to change a relative vertical position between the processing container 100 and the substrate support unit 200.

5 is a cross-sectional view showing an embodiment of the substrate support unit and the heating unit of FIG. 3, and FIG. 6 is a view showing an enlarged portion of the heating unit of FIG. 5.

Hereinafter, referring to FIGS. 3 to 6, the substrate support unit 200 supports the substrate W during the process, and may be rotated by the driving unit 240 during the process.

The substrate support unit 200 includes a chuck stage 210, a quartz window 220, a rotating part 230, a back nozzle part 240, and a heating unit 280.

The chuck stage 210 has a circular upper surface. The chuck stage 210 is coupled to the rotating unit 230 and rotated.

The rotating part 230 has a hollow shape and is coupled with the chuck stage 210 to rotate the chuck stage 210.

The quartz window 220 is positioned above the substrate W and the chuck stage 210. The quartz window 220 is provided to protect the heating member 250. The quartz window 220 may be provided transparently. The quartz window 220 may be rotated together with the chuck stage 210. The quartz window 220 includes support pins 224. The support pins 224 are disposed at a predetermined distance apart from the edge of the upper surface of the quartz window 220. The support pin 224 is provided to protrude upward from the quartz window 220. The support pins 224 support the lower surface of the substrate W so that the substrate W is supported in a state spaced from the quartz window 220 in the upward direction.

Chucking pins 212 are positioned on the quartz window 220. The chucking pins 212 align the substrate W so that the substrate W supported by the plurality of support pins 224 is placed in a proper position. During the process, the chucking pins 212 contact the side of the substrate W to prevent the substrate W from being separated from the original position.

The quartz window 220 is provided with a reflective member 290 that reflects the light energy lost in the lateral direction toward the substrate. The reflective member 290 may be provided on the inner edge 229 of the quartz window 220 surrounding the heating member 250. The inner edge surface 229 is formed to be inclined so as to be closer in the inward direction from the top to the bottom. The reflective member 290 may be provided in a form in which a reflective film is installed on the inner surface 229 of the quartz window 220 or a reflective material is coated on the inner surface 229 of the quartz window 220. Light energy emitted from the heating member 250 is reflected to the edge of the substrate by the reflective member 290 provided on the inner surface of the quartz window 220 (see arrow in FIG. 6). Accordingly, the light concentration at the edge of the substrate is increased, and temperature uniformity can be improved.

The back nozzle part 240 is provided to spray a chemical solution onto the back surface of the substrate W. The back nozzle part 240 includes a nozzle body 242 and a chemical liquid injection part 244. The chemical injection part 244 is located at the center of the chuck stage 210 and the quartz window 220. The nozzle body 242 is installed through the hollow rotary part 230, and a chemical liquid moving line, a gas supply line, and a purge gas supply line may be provided inside the nozzle body 242. The chemical liquid transfer line supplies an etchant for etching treatment of the back surface of the substrate W to the chemical liquid injection unit 244, and the gas supply line supplies nitrogen gas to the back surface of the substrate W for etch uniformity control, and a purge gas The supply line supplies nitrogen purge gas to prevent penetration of the etchant between the quartz window 220 and the nozzle body 242.

The heating unit 280 is installed inside the substrate support unit 200. The heating unit 280 heats the substrate W during the process. The heating unit 280 includes a heating member 250 and a base plate 260.

The heating member 250 is installed on the chuck stage 210. The heating member 250 may be a heating light source emitting light energy. The heating elements 250 are provided with different diameters. A plurality of heating members 250 may be provided. The heating member 250 may be provided in a ring shape. For example, the heating member 250 may be provided with a plurality of lamps 252 provided in a ring shape. Each lamp 252 is configured with a temperature control unit (not shown) so that each of the lamps 252 may be controlled.

In the present embodiment, the heating member is described as ring-shaped lamps, but the present invention is not limited thereto. The heating member may be a ring type light source or a point type light source when viewed in shape. In addition, as the heating member, a light source such as VCSEL may be applied among LEDs, laser diodes and laser diodes.

The heating element 250 may be subdivided into a number of concentric zones. Each zone is provided with lamps 252 capable of individually heating each zone. The lamps 252 may be provided in a ring shape concentrically arranged at different radial distances with respect to the center of the chuck stage 210. Although six lamps 252 are shown in this embodiment, this is only an example and the number of lamps can be added or subtracted depending on the degree of temperature control desired. Meanwhile, the diameter of the outermost lamp among the six lamps 252 may be provided equal to the diameter of the substrate to increase the temperature at the edge of the substrate.

The heating member 250 may control the temperature of each individual zone to continuously increase or decrease the temperature according to the radius of the substrate W during the process. In a structure in which the lamps 252 are rotated together with the chuck stage 210, a slip ring may be used to supply power to the heating member 250.

The base plate 260 is provided between the heating member 250 and the chuck stage 210. The base plate 260 may be a reflective plate that reflects and transmits heat (light energy) generated from the lamps 252 to the upper substrate W. The base plate 260 may be supported by a nozzle body 242 installed through the central space of the rotating part 230. The base plate 260 is formed to extend downwardly at the inner end. The base plate 260 is provided in a fixed manner that does not rotate together with the chuck stage 210.

The base plate 260 may include reflective protrusions 265 and reflective inclined surfaces 267.

A plurality of reflective protrusions 265 are provided to protrude from the upper surface of the base plate 260. The reflective protrusion 265 is provided in a ring shape. The reflective protrusion 265 is located directly under the lamp 252. The reflective protrusion 265 may have a triangular cross-section whose cross-section becomes wider as it moves away from the lamp. That is, the reflection protrusion 265 serves to spread light energy of the lamp. For example, the reflective protrusion 265 includes a first side wall 265a and a second side wall 265b, and the first side wall 265a and the second side wall 265b are inclined to be closer to the lamp 252 toward the top Can be provided. The first sidewall 265a and the second sidewall 265b may be provided symmetrically with respect to a line passing between the main reflector 265 and may have the same inclination angle. A lamp 252 is positioned on the vertex of the reflective protrusion 265.

Among the light energy radiated from the lamp 252, the light energy directed downward of the lamp 252 is reflected by the first sidewall 265a and the second sidewall 265b of the reflective protrusion 265 and spreads in all directions.

Reflective inclined surfaces 267 are located inside the lamps 252. The reflective inclined surface 267 may be formed as a flat surface, a concave curved surface, or a convex curved surface, and the curved surface may be formed in the shape of a partial curved surface of a circle or an ellipse. In addition, when the curved surface is provided in an elliptical shape, the curvature may change so that the light concentration increases toward the central region of the substrate.

The base plate 260 may be provided as a surface of a metal material. The surface is made of metal with good heat reflectance. For example, the surface may be made of gold, silver or aluminum. On the contrary, it may be provided with a metal material and other material having good heat reflectance.

The base plate 260 may provide a reflective protrusion 265 under the lamp 252 to spread light energy (heat), thereby more evenly providing light energy to the substrate W. In addition, by providing the reflective protrusions 265, the effect of reducing the amount of thermal deformation of the base reflecting plate 261 is obtained.

The base plate 260 may be provided with cooling fins (not shown) for heat dissipation. In order to suppress heat generation of the base plate 260, the cooling gas may be configured to flow through the bottom surface of the lower reflector 261. For example, the nozzle body 242 has an injection port 248 for injecting a cooling gas to the bottom of the base reflector 261.

As described above, according to the present invention, the thermal uniformity of the substrate can be improved by compensating for the temperature by increasing the light concentration near the edge and the center of the substrate.

7 is a view showing a modified example of the substrate support unit.

The substrate support unit 200a according to the modified example includes a chuck stage 210, a quartz window 220, a rotating part 230, a back nozzle part 240, and a heating unit 280, which are shown in FIG. Since the chuck stage 210, the quartz window 220, the rotating part 230, the back nozzle part 240, and the heating unit 280 are provided with substantially similar configurations and functions, the differences from the present embodiment will be mainly modified below. Let's explain an example.

In this modified example, the inner surface 229a of the quartz window 220 is formed to be concave toward the edge of the substrate. In addition, the reflective member 290a may also be provided in a concave shape corresponding to the curved surface of the inner surface 229a. Preferably, the reflective member may be provided with a longitudinal section in a partial shape of an ellipse.

Meanwhile, the reflective inclined surface 267a may be provided as a concave curved surface in the central portion of the base plate 260 so as to increase the concentration of light to the central region of the substrate. Light emitted from the innermost lamp may be reflected on the concave curved surface of the reflective inclined surface 267a to be provided to the center area of the substrate. Accordingly, the light concentration to the central region of the substrate is increased, thereby improving the substrate etch rate.

8A and 8B schematically illustrate a method of designing a curved surface of the reflective member shown in FIG. 7.

Figures 8a to 8b are for explaining the principle of forming an ellipse, the ellipse is a pin inserted into the two focal points (P1, P2) on the plane, and hooked both ends of the thread of an appropriate length to both pins, and then the fan end It is defined as a figure drawn by a fan when the thread is pulled and rotated with (P).

That is, the ellipse is defined as a trace of points where the sum of the lengths of the yarn from the two focal points P1 and P2 to the fan end (P) is constant, and if you draw a figure while pulling the thread to the fan end (P), Fig. An oval like this is made.

In this way, the elliptical shape based on the two focal points is where the fan end P is located at the two focal points P1 (corresponding to the lamp in the present invention) and P2 (corresponding to the target at the edge of the substrate where light is focused in the present invention) on the plane. This is because the sum of the distance plus the length is always constant, and the direction in which the fan end (P) moves while forming such an ellipse is the tangent LL' direction at the point P of the ellipse, as shown in FIG. As already proven, it can be seen that ∠FPT=∠F'PT' holds (refer to the equation of the ellipse).

Therefore, if the inside of the ellipse is made of a mirror or a reflective surface, if a light source (lamp) is placed at one focal point P1 of the ellipse, the rays from the focal point P1 are reflected from the inner surface of the ellipse and another focal point P2 (the substrate edge area Target), it can be seen that the state as shown in FIG. 8B. In this way, the elliptical curved surface of the reflective member 290a may be designed, and the light energy of the lamp may be condensed toward the target at the edge of the substrate by the curved reflecting member.

9 is a description of a position of a target in which light is collected as described above.

Referring to FIG. 9, the target P2 may be located within an edge section of a substrate. More preferably, the target P2 point may be located close to the center of the pattern section excluding the section in which the pattern is not formed among the edge sections of the substrate.

10 is a view showing a modified example of the reflective member.

According to a modified example, the reflective member 290b may be provided on the base plate 260. The reflective member 290b may be installed on the edge of the base plate 260 in a separate configuration or may be provided integrally with the base plate. Since the reflective member 290b is provided with a configuration and function similar to that of the reflective member 290a illustrated in FIG. 7, a detailed description thereof will be omitted.

The detailed description above is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the disclosed contents, and/or the skill or knowledge of the art. The above-described embodiments describe the best state for implementing the technical idea of the present invention, and various changes required in the specific application fields and uses of the present invention are possible. Therefore, the detailed description of the invention is not intended to limit the invention to the disclosed embodiment. In addition, the appended claims should be construed as including other embodiments.

10: substrate processing apparatus
100: processing container
200: substrate support unit
260: base plate
280: heating unit
300: treatment liquid supply unit
600: lifting unit

Claims (28)

Chuck stage;
A window positioned on the chuck stage;
A heating unit provided in an inner space formed between the chuck stage and the window; And
And a reflective member for reflecting light energy lost from the heating unit in a lateral direction of the heating unit toward the substrate,
The substrate is supported at a position higher than the upper surface of the window,
The heating unit
Base plate; And
It is installed on the base plate and includes a heating unit having heating light sources emitting light energy,
The base plate,
A substrate supporting apparatus further comprising a reflective surface provided on a central portion of the base plate so as to increase light concentration in a central region of the substrate. The method of claim 1,
The window,
It is disposed to surround the side and upper portions of the heating unit,
The reflective member,
A substrate supporting device provided on an inner surface of a portion of the window surrounding a side portion of the heating portion. The method of claim 2,
The inner side,
The substrate supporting device is formed to be inclined so as to be closer to the central axis of the chuck stage from the upper side to the lower side. The method of claim 2,
The inner side,
A substrate support device formed concave toward the edge of the substrate. The method of claim 1,
The reflective member is a substrate support device comprising a reflective plate or a reflective coating film. The method of claim 1,
A rotating portion having a hollow shape and coupled to the chuck stage to rotate the chuck stage; And
The substrate supporting apparatus further comprises a back nozzle penetrating the inside of the rotating part and provided in the center of the upper portion of the chuck stage, and spraying the processing liquid to the rear surface of the substrate. The method of claim 2,
The heating light sources,
A substrate supporting apparatus comprising ring-shaped lamps arranged concentrically at different radial distances with respect to the center of the base plate. The method of claim 7,
The base plate,
A substrate support device comprising a reflector that reflects light energy of the lamps upward. The method of claim 8,
The base plate,
A substrate supporting apparatus comprising a reflective protrusion positioned under the lamp and protruding in a protrusion to spread light energy radiated from the lamp. The method of claim 9,
The reflective protrusion,
A substrate supporting device having a triangular cross-section whose cross-section becomes wider as the distance from the lamp increases. The method according to claim 1 or 8,
The reflective surface,
Substrate support device provided at an angle. Chuck stage;
A window positioned on the chuck stage;
A heating unit provided in an inner space formed between the chuck stage and the window; And
And a reflective member for reflecting light energy lost from the heating unit in a lateral direction of the heating unit toward an edge region of the substrate,
The substrate is supported at a position higher than the upper surface of the window,
The heating unit
Base plate; And
It is installed on the base plate and includes a heating unit having heating light sources emitting light energy,
The base plate,
A substrate supporting apparatus further comprising a convex curved reflective surface provided on a central portion of the base plate so as to increase light concentration in a central region of the substrate. Chuck stage;
A window positioned on the chuck stage;
A heating unit provided in an inner space formed between the chuck stage and the window; And
And a reflective member for reflecting light energy lost from the heating unit in a lateral direction of the heating unit toward an edge region of the substrate,
The substrate is supported at a position higher than the upper surface of the window,
The heating unit
Base plate; And
It is installed on the base plate and includes a heating unit having heating light sources emitting light energy,
The reflective member,
A substrate supporting apparatus comprising a curved reflective surface provided on an inner edge of the window surrounding the heating part and condensing light energy of the heating light source toward a target, which is an arbitrary point in the edge section of the substrate. The method of claim 13,
A substrate supporting device in which the reflective surface of the reflective member has a shape forming a part of an ellipse. The method of claim 13,
The curved surface of the reflective member is shaped such that the distance between the light emission point of the heating light source and the target becomes a focal point of an ellipse. The method of claim 13,
The target,
A substrate supporting apparatus which is a point close to the center of the pattern section excluding the section in which the pattern is not formed among the edge sections of the substrate. In the apparatus for processing a substrate,
A processing container with an open top;
A substrate support unit positioned in the processing container and supporting a substrate;
A processing liquid supply unit for supplying a processing liquid to a substrate placed on the substrate support unit; And
A heating unit provided in the substrate support unit and having a heating unit emitting light energy for heating the substrate;
The substrate support unit,
Chuck stage;
A reflective member comprising a window positioned on the chuck stage and reflecting light energy lost in a lateral direction thereof from the heating unit toward the substrate,
A substrate processing apparatus further comprising a reflective plate having a reflective surface provided at a central portion so as to increase light concentration in a central region of the substrate. The method of claim 17,
The reflective member,
A substrate processing apparatus provided on an inner surface of a portion of the window that laterally surrounds the heating portion. The method of claim 18,
The inner side,
It is formed to be inclined to get closer to the center from the top to the bottom, or
A substrate processing apparatus formed to be concave toward the edge of the substrate. The method of claim 17,
The heating part,
A substrate processing apparatus comprising a lamp provided in the substrate support unit. The method of claim 20,
The reflective plate,
A substrate processing apparatus having a reflective protrusion positioned under the lamp and protruding in a protrusion shape to spread light energy radiated from the lamp. The method of claim 21,
The substrate support unit,
A rotating portion having a hollow shape and coupled to the chuck stage to rotate the chuck stage; And
It is provided in the center of the upper portion of the chuck stage through the inside of the rotating part, and includes a back nozzle for spraying a processing liquid to the rear surface of the substrate,
The reflective protrusion,
A substrate processing apparatus having a triangular cross section formed in a ring shape having the same diameter as that of the lamp, and having a cross section widening as a distance from the lamp increases. delete The method of claim 17,
The reflective surface is provided in any one of a flat surface, a concave curved surface, or a block curved surface. In the apparatus for processing a substrate,
A processing container with an open top;
A substrate support unit positioned in the processing container and supporting a substrate;
A processing liquid supply unit for supplying a processing liquid to a substrate placed on the substrate support unit; And
A heating unit provided in the substrate support unit and having a heating unit emitting light energy for heating the substrate;
The substrate support unit,
Chuck stage;
A window positioned on the chuck stage; And
And a reflective member for reflecting light energy lost in the lateral direction from the heating unit toward the substrate,
The reflective member,
A substrate processing apparatus having a curved reflective surface provided on an inner surface of a portion of the window that laterally surrounds the heating unit and condensing light energy toward a target, which is an arbitrary point of an edge section of the substrate. The method of claim 25,
A substrate processing apparatus in which the curved surface of the reflective member is provided to form a part of an ellipse. The method of claim 25,
The curved surface of the reflective member is shaped such that the distance between the light emitting point of the heating unit and the target becomes a focal point of an ellipse. The method of claim 25,
The target,
A substrate processing apparatus which is a point close to the center of the pattern section excluding the section in which the pattern is not formed among the edge sections of the substrate.

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