KR102054222B1 - Substrate heating unit - Google Patents

Abstract

The present invention relates to a substrate heating unit. A substrate heating unit according to an embodiment of the present invention includes a rotatable chuck stage on which a substrate is placed; A heat generating unit having ring-shaped lamps disposed spaced apart from an upper portion of the chuck stage and arranged concentrically at different radial distances with respect to the center of the chuck stage; A reflection member reflecting the radiant heat of the heat generating portion toward the substrate; And a light blocking member that blocks a portion of the radiant heat of the heat generating unit so that the heat is not directed to the substrate.

Description

Substrate Heating Unit {SUBSTRATE HEATING UNIT}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate heating unit for heating a substrate during a substrate processing process.

In general, the photoresist coating process, the developing process, the etching process, the ashing process, etc., are used to process glass substrates or wafers in flat panel display device manufacturing or semiconductor manufacturing processes. Various processes are performed.

Each process includes a wet cleaning process using chemical or deionized water to remove various contaminants attached to the substrate, and a drying process to dry the chemical or pure water remaining on the substrate surface. ) The process is carried out.

Recently, an etching process for selectively removing a silicon nitride film and a silicon oxide film using a chemical aqueous solution used at a high temperature such as sulfuric acid or phosphoric acid is being performed.

In a substrate processing apparatus using a high temperature aqueous chemical solution, a substrate heating apparatus for heating a substrate using an IR lamp is applied and utilized to improve an etching rate.

However, in the conventional substrate heating apparatus, IR lamps are arranged at equal intervals, and the outermost lamp is smaller than the substrate, and the innermost lamp has a predetermined size in consideration of the center nozzle. Therefore, as shown in the table of FIG. 1, there is a problem that the light intensity distribution in the substrate drops sharply near the edge and the center.

An object of the present invention is to provide a substrate heating unit capable of uniformly heating a substrate during a substrate processing process.

The present invention seeks to provide a substrate heating unit in which radiant heat provided from the lamp can be provided uniformly to the substrate.

The problem to be solved by the present invention is not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the invention, the rotatable chuck stage on which the substrate is placed; A heat generating unit having ring-shaped lamps disposed spaced apart from an upper portion of the chuck stage and arranged concentrically at different radial distances with respect to the center of the chuck stage; A reflection member reflecting the radiant heat of the heat generating portion toward the substrate; And a light blocking member that blocks a part of the radiant heat of the heat generating unit so that the heat is not directed to the substrate.

In addition, the light blocking member may be provided between the substrate and the heat generating unit.

In addition, the heating unit further includes a quartz window for protecting the lamps, the light blocking member may be provided on the inner bottom surface of the quartz window.

In addition, the light blocking member is provided only in a predetermined region of the quartz window; The predetermined zone may correspond to a zone in which a large amount of radiant heat is provided in the heat generating unit.

In addition, the light blocking member may be provided on the inner bottom surface of the quartz window to provide a light blocking plate that shields or reflects radiant heat.

In addition, the light blocking member may be provided in a form in which a reflective material is coated on an inner bottom surface of the quartz window.

In addition, the reflective member may include a reflective protrusion formed in a ring shape under the lamp and protruding in the form of a protrusion to spread light energy emitted from the lamp.

In addition, the reflective projection may have a triangular cross section that the cross section is wider as the distance away from the lamp.

The reflective member may further include a side mirror positioned outside the lamps to block light energy emitted toward the chuck stage.

According to another aspect of the invention, the rotatable chuck stage on which the substrate is placed; A heat generating unit having ring-shaped lamps disposed spaced apart from an upper portion of the chuck stage and arranged concentrically at different radial distances with respect to the center of the chuck stage; A reflection member reflecting the radiant heat of the heat generating portion toward the substrate; And a quartz window on the heat generating unit to protect the lamps. The quartz window may be provided with a substrate heating unit including a light blocking member that blocks a part of the radiant heat of the heat generating unit so that the quartz window does not face the substrate.

In addition, the light blocking member may be provided in a ring shape or a piece shape.

The light blocking member may be formed as a light blocking plate positioned on the lamp to shield or reflect the radiant heat.

In addition, the light blocking plate may have a triangular cross section in which a cross section becomes wider as it moves away from the lamp.

According to an embodiment of the present invention, the light shielding member is disposed in an area in which light (radiation heat) of the lamp is excessively provided to have a particular effect of improving uniformity of intensity distribution of radiant heat.

The effects of the present invention are not limited to the above-described effects, and effects that are not mentioned will be clearly understood by those skilled in the art from the present specification and the accompanying drawings.

1 is a table showing a light intensity distribution diagram in a conventional substrate heating apparatus.
2 is a plan view schematically showing an example of a substrate processing apparatus provided with a substrate processing apparatus according to an embodiment of the present invention.
3 is a plan view of the substrate processing apparatus of FIG. 2.
4 is a cross-sectional view of the substrate processing apparatus of FIG. 2.
5 is a cross-sectional view illustrating an embodiment of the substrate support unit and the heating unit of FIG. 3.
6 is an enlarged view of a portion of the heating unit of FIG. 5.
7 is a partial cross-sectional perspective view showing a reflective member and a light blocking member.
8A and 8B illustrate another example of the light blocking member.
9 is a view illustrating another example of the light blocking member.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In the following description of the present invention, if it is determined that the detailed description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in describing the present invention with reference to the accompanying drawings, the same or corresponding elements are denoted by the same reference numerals regardless of the reference numerals, and duplicates thereof. The description will be omitted.

2 is a plan view schematically showing the substrate processing equipment 1 of the present invention.

Referring to FIG. 2, the substrate processing facility 1 includes an index module 1000 and a process processing module 2000. The index module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, the transfer frame 1400, and the process module 2000 are sequentially arranged in a row. Hereinafter, the direction in which the load port 1200, the transfer frame 1400, and the process module 2000 are arranged is referred to as a first direction 12. When viewed from the top, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction. It is called (16).

The carrier 1300 in which the substrate W is accommodated is mounted in the load port 1200. A plurality of load ports 1200 are provided and they are arranged in a line along the second direction 14. In FIG. 1, four load ports 1200 are provided. However, the number of load ports 1200 may increase or decrease depending on conditions such as process efficiency and footprint of the process processing module 2000. The carrier 1300 is formed with a slot (not shown) provided to support the edge of the substrate W. A plurality of slots are provided in the third direction 16. The substrates W are positioned in the carrier 1300 to be stacked in a state spaced apart from each other along the third direction 16. As the carrier 1300, a front opening unified pod (FOUP) may be used.

The process module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The transfer chamber 2400 is disposed in parallel with the first direction 12 in the longitudinal direction thereof. Process chambers 2600 are disposed on one side and the other side of the transfer chamber 2400 along the second direction 14, respectively. Process chambers 2600 located on one side of the transfer chamber 2400 and process chambers 2600 located on the other side of the transfer chamber 2400 are provided to be symmetrical with respect to the transfer chamber 2400. Some of the process chambers 2600 are disposed along the longitudinal direction of the transfer chamber 2400. In addition, some of the process chambers 2600 are arranged to be stacked on each other. That is, the process chambers 2600 may be arranged in an array of A X B (A and B are one or more natural numbers) on one side of the transfer chamber 2400. Where A is the number of process chambers 2600 provided in a line along the first direction 12, and B is the number of process chambers 2600 provided in a line along the third direction 16. When four or six process chambers 2600 are provided at one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an array of 2 × 2 or 3 × 2. The number of process chambers 2600 may increase or decrease. Unlike the above, the process chamber 2600 may be provided only on one side of the transfer chamber 2400. In addition, unlike the above-described process chamber 2600 may be provided as a single layer on one side and both sides of the transfer chamber 2400.

The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides a space in which the substrate W stays before the substrate W is transferred between the transfer chamber 2400 and the transfer frame 1400. The buffer unit 2200 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are spaced apart from each other along the third direction 16. In the buffer unit 2200, a surface facing the transfer frame 1400 and a surface facing the transfer chamber 2400 are opened.

The transfer frame 1400 transports the substrate W between the carrier 1300 and the buffer unit 2200 mounted on the load port 1200. The transfer frame 1400 is provided with an index rail 1420 and an index robot 1440. The index rail 1420 is provided in parallel with the second direction 14 in the longitudinal direction thereof. The index robot 1440 is installed on the index rail 1420 and linearly moves in the second direction 14 along the index rail 1420. The index robot 1440 has a base 1441, a body 1442, and an index arm 1443. The base 1442 is installed to be movable along the index rail 1420. Body 1442 is coupled to base 1441. The body 1442 is provided to be movable along the third direction 16 on the base 1442. In addition, the body 1442 is provided to be rotatable on the base 1442. The index arm 1443 is coupled to the body 1442 and is provided to be capable of moving forward and backward with respect to the body 1442. The plurality of index arms 1443 are provided to be individually driven. The index arms 1443 are stacked to be spaced apart from each other along the third direction 16. Some of the index arms 1443 are used to convey the substrate W from the process processing module 2000 to the carrier 1300, and others are used to convey the substrate W from the carrier 1300 to the process processing module 2000. It can be used when conveying. This may prevent particles generated from the substrate W before the process treatment from being attached to the substrate W after the process treatment while the index robot 1440 loads and unloads the substrate W.

The transfer chamber 2400 carries the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600. The transfer chamber 2400 is provided with a guide rail 2420 and a main robot 2440. The guide rail 2420 is disposed such that its length direction is parallel to the first direction 12. The main robot 2440 is installed on the guide rail 2420 and is linearly moved along the first direction 12 on the guide rail 2420. The main robot 2440 has a base 2441, a body 2442, and a main arm 2443. The base 2441 is installed to be movable along the guide rail 2420. Body 2442 is coupled to base 2441. The body 2442 is provided to be movable along the third direction 16 on the base 2441. In addition, the body 2442 is provided to be rotatable on the base 2441. The main arm 2443 is coupled to the body 2442, which is provided to be capable of moving forward and backward with respect to the body 2442. A plurality of main arms 2443 are provided to be individually driven. The main arms 2443 are stacked to be spaced apart from each other along the third direction 16. The main arm 2443 is used to convey the substrate W from the buffer unit 2200 to the process chamber 2600 and the substrate W is used to convey the substrate W from the process chamber 2600 to the buffer unit 2200. The main arms 2443 may be different from each other.

In the process chamber 2600, a substrate processing apparatus 10 that performs a cleaning process on the substrate W is provided. The substrate processing apparatus 10 provided in each process chamber 2600 may have a different structure depending on the type of cleaning process to be performed. Optionally, the substrate processing apparatus 10 in each process chamber 2600 may have the same structure. Optionally, the process chambers 2600 are divided into a plurality of groups so that the substrate processing apparatuses 10 provided to the process chambers 2600 belonging to the same group have the same structure and are provided to the process chambers 2600 belonging to different groups. The substrate processing apparatuses 10 may have different structures from each other. For example, when the process chamber 2600 is divided into two groups, one side of the transfer chamber 2400 is provided with process chambers 2600 of the first group, and the other side of the transfer chamber 2400 is provided with the second group. Process chambers 2600 may be provided. Optionally, a first group of process chambers 2600 may be provided at a lower layer, and a second group of process chambers 2600 may be provided at a lower layer at each of one side and the other side of the transfer chamber 2400. The process chamber 2600 of the first group and the process chamber 2600 of the second group may be classified according to the type of chemicals used or the type of cleaning method.

In the following embodiment, an apparatus for cleaning the substrate W using processing fluids such as high temperature sulfuric acid, alkaline chemicals, acidic chemicals, rinse liquids, and dry gas will be described as an example. However, the technical idea of the present invention is not limited thereto, and the present invention may be applied to all kinds of apparatuses that perform a process while rotating the substrate W, such as an etching process.

3 is a plan view of the substrate processing apparatus of FIG. 2, and FIG. 4 is a cross-sectional view of the substrate processing apparatus of FIG. 2.

3 and 4, the substrate processing apparatus 10 includes a chamber 800, a processing container 100, a substrate supporting unit 200, a heating unit 280, a processing liquid supply unit 300, and a process exhaust unit. 500 and elevation unit 600.

Chamber 800 provides a closed interior space. The airflow supply unit 810 is installed at the top. The airflow supply unit 810 forms a downdraft in the chamber 800.

The airflow supply unit 810 filters the high humidity outdoor air to supply the inside of the chamber. The high humidity outdoor air passes through the airflow supply unit 810 and is supplied into the chamber to form a downward airflow. The downdraft provides a uniform stream of air over the substrate (W) and collects contaminants generated in the process of treating the surface of the substrate (W) by the processing fluid together with the air. Through the exhaust to the process exhaust (500).

Chamber 800 is divided into process area 816 and maintenance area 818 by horizontal bulkhead 814. The processing container 100 and the substrate support unit 200 are located in the process region 816. In addition to the discharge lines 141, 143, and 145 and the exhaust line 510, the maintenance unit 818 includes a driving unit of the elevating unit 600, a driving unit connected to the processing liquid supply unit 300, and a supply line. The back is located. Maintenance area 818 is isolated from process area 816.

The processing container 100 has a cylindrical shape with an open top, and provides a process space for processing the substrate W. FIG. An open upper surface of the processing container 100 serves as a carrying-out and carrying-in passage of the substrate W. The substrate support unit 200 is located in the process space. The substrate support unit 200 rotates the substrate W while supporting the substrate W during the process.

The processing container 100 provides a lower space in which an exhaust duct 190 is connected to a lower end of the processing container 100 to allow forced exhaust. In the processing container 100, the first to third recovery containers 110, 120, and 130 for introducing and sucking the processing liquid and gas scattered on the rotated substrate W are disposed in multiple stages.

The annular first to third recovery bins 110, 120, 130 have exhaust ports H communicating with one common annular space.

Specifically, each of the first to third recovery containers 110, 120, and 130 includes a bottom surface having an annular ring shape and a sidewall extending from the bottom surface and having a cylindrical shape. The second recovery container 120 surrounds the first recovery container 110 and is spaced apart from the first recovery container 110. The third collection container 130 surrounds the second collection container 120 and is spaced apart from the second collection container 120.

The first to third recovery containers 110, 120, and 130 provide first to third recovery spaces RS1, RS2, and RS3 into which air flows containing the treatment liquid and the fume scattered from the substrate W flow. . The first recovery space RS1 is defined by the first recovery container 110, and the second recovery space RS2 is defined by the separation space between the first recovery container 110 and the second recovery container 120. The third recovery space RS3 is defined by the separation space between the second collection container 120 and the third collection container 130.

The upper surface of each of the first to third recovery containers 110, 120, 130 is open at the center. The first to third recovery containers 110, 120, and 130 are formed of inclined surfaces in which a distance from a corresponding bottom surface gradually increases from the connected side wall toward the opening. The processing liquid scattered from the substrate W flows into the recovery spaces RS1, RS2, and RS3 along the upper surfaces of the first to third recovery containers 110, 120, and 130.

The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 141. The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 143. The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 145.

The processing liquid supply unit 300 discharges a high temperature chemical for etching the surface of the substrate W. For example, the treatment liquid may be sulfuric acid, phosphoric acid, or a mixture of sulfuric acid and phosphoric acid.

The treatment liquid nozzle member 310 includes a nozzle 311, a nozzle arm 313, a support rod 315, and a nozzle driver 317. The nozzle 311 receives a processing liquid through the supply unit 320. The nozzle 311 discharges the processing liquid to the substrate W surface. The nozzle arm 313 is an arm provided with a long length in one direction, and the nozzle 311 is mounted at the tip. The nozzle arm 313 supports the nozzle 311. At the rear end of the nozzle arm 313, a support rod 315 is mounted. The support rod 315 is located below the nozzle arm 313. The support rod 315 is disposed perpendicular to the nozzle arm 313. The nozzle driver 317 is provided at the bottom of the support rod 315. The nozzle driver 317 rotates the support rod 315 about the longitudinal axis of the support rod 315. Rotation of the support rod 315 causes the nozzle arm 313 and the nozzle 311 to swing the support rod 315 along the axis. The nozzle 311 may swing between an outer side and an inner side of the processing container 100. In addition, the nozzle 311 may swing the section between the center of the substrate W and the edge region to discharge the processing liquid.

The process exhaust part 500 is responsible for exhausting the inside of the processing container 100. For example, the process exhaust part 500 is to provide an exhaust pressure (suction pressure) to a recovery container that recovers the processing liquid of the first to third recovery containers 110, 120, and 130 during the process. The process exhaust part 500 includes an exhaust line 510 and a damper 520 connected to the exhaust duct 190. The exhaust line 510 receives the exhaust pressure from an exhaust pump (not shown) and is connected to the main exhaust line embedded in the bottom space of the semiconductor production line.

On the other hand, the processing container 100 is coupled with the lifting unit 600 for changing the vertical position of the processing container 100. The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 is moved up and down, the relative height of the processing container 100 with respect to the substrate support unit 200 is changed.

The elevating unit 600 includes a bracket 612, a moving shaft 614, and a driver 616. The bracket 612 is fixed to the outer wall of the processing container 100. The bracket 612 is fixedly coupled to the moving shaft 614 to be moved in the vertical direction by the driver 616. The processing container 100 is lowered so that the chuck stage 210 protrudes above the processing container 100 when the substrate W is loaded into the chuck stage 210 or unloaded from the chuck stage 210. In addition, when the process is in progress, the height of the processing container 100 is adjusted to allow the processing liquid to flow into the predetermined recovery containers 110, 120, and 130 according to the type of processing liquid supplied to the substrate W. FIG. . The relative vertical position between the processing container 100 and the substrate W is changed. The processing container 100 may vary the types of treatment liquid and pollutant gas recovered for each of the recovery spaces RS1, RS2, and RS3. According to one embodiment, the elevating unit 600 vertically moves the processing container 100 to change the relative vertical position between the processing container 100 and the substrate support unit 200.

5 is a cross-sectional view illustrating an example of the substrate support unit and the heating unit of FIG. 3, FIG. 6 is an enlarged view of a portion of the heating unit of FIG. 5, and FIG. 7 is a partial perspective view of the reflective member and the light blocking member. to be.

3 to 7, the substrate support unit 200 supports the substrate W during the process and may be rotated by the driver 240 while the process is in progress.

The substrate support unit 200 includes a chuck stage 210, a quartz window 220, a rotating part 230, a back nozzle part 240, and a heating unit 280.

The chuck stage 210 has a circular top surface. The chuck stage 210 is coupled to the rotating unit 230 and rotated. The chucking pins 212 are installed at the edge of the chuck stage 210. The chucking pins 212 are provided to penetrate the quartz window 220 and protrude upward from the quartz window 220. The chucking pins 212 align the substrate W such that the substrate W supported by the plurality of support pins 224 is in place. During the process, the chucking pins 212 are in contact with the side of the substrate W to prevent the substrate W from being displaced from its position.

The rotating unit 230 has a hollow shape and is coupled to the chuck stage 210 to rotate the chuck stage 210.

The quartz window 220 is positioned above the substrate W and the chuck stage 210. The quartz window 220 is provided to protect the heating member 250. The quartz window 220 may be provided transparently. The quartz window 220 may rotate with the chuck stage 210. The quartz window 220 includes support pins 224. The support pins 224 are spaced apart from each other by the upper edge portion of the quartz window 220. The support pins 224 are provided to protrude upward from the quartz window 220. The support pins 224 support the bottom surface of the substrate W so that the substrate W is supported in a state spaced upward from the quartz window 220.

The back nozzle part 240 is provided to inject the chemical liquid to the back surface of the substrate (W). The back nozzle part 240 includes a nozzle body 242 and a chemical liquid injection part 244. The chemical liquid injection part 244 is positioned at the center of the chuck stage 210 and the quartz window 220. The nozzle body 242 is penetrated and arranged in the hollow rotating part 230, and a chemical liquid moving line, a gas supply line, and a purge gas supply line may be provided inside the nozzle body 242. The chemical liquid moving line supplies the etching liquid for etching treatment on the back surface of the substrate W to the chemical liquid injection part 244, and the gas supply line supplies nitrogen gas for adjusting the etching uniformity to the back surface of the substrate W, and purge gas. The supply line supplies nitrogen purge gas to prevent the etching liquid from penetrating between the quartz window 220 and the nozzle body 242.

 The heating unit 280 is installed inside the substrate support unit 200. The heating unit 280 heats the substrate W during the process. The heating unit 280 may include a heating member 250, a reflective member 260, and a light blocking member 270.

The heating member 250 is installed on the top of the chuck stage. The heating members 250 are provided with different diameters. The heating member 250 may be provided in plural. The heating member 250 may be provided in a ring shape. For example, the heating member 250 may be provided with a plurality of lamps 252 provided in a ring shape. Each lamp 252 is configured with a temperature controller (not shown), so that control may be possible.

Heating member 250 may be subdivided into concentric multiple zones. Each zone is provided with lamps 252 that can heat each zone individually. The ramps 252 may be provided in a ring shape arranged concentrically at different radial distances with respect to the center of the chuck stage 210. Although six lamps 252 are shown in this embodiment, this is only one example and the number of lamps may be added or subtracted depending on the desired temperature controlled degree. On the other hand, the diameter of the lamp located at the outermost of the six lamps 252 to increase the temperature at the edge portion of the substrate may be provided the same as the diameter of the substrate.

The heating member 250 may control the temperature of each individual zone to continuously increase or decrease the temperature depending on the radius of the substrate W during the process. In the structure in which the lamps 252 are rotated together with the chuck stage 210, a slip ring may be used to supply power to the heating member 250.

The reflective member 260 is provided between the heating member 250 and the chuck stage 210. The reflective member 260 reflects and radiates radiant heat (light energy) generated by the lamps 252 to the upper substrate W. The reflective member 260 may be supported by the nozzle body 242 installed through the central space of the rotating part 230. The reflective member 260 extends downward at the inner end thereof. The reflective member 260 is fixedly provided not to rotate with the chuck stage 210.

The reflective member 260 may include a base reflector 261, a reflective protrusion 265, and a side mirror 267.

The base reflector plate 261 is positioned between the top of the chuck stage 210 and the bottom of the lamp 252.

The reflective protrusion 265 protrudes from the base reflecting plate 261 and is provided in plurality. The reflective protrusion 265 is provided in a ring shape. The reflective protrusion 265 is located directly under the lamp 252. The reflective protrusion 265 may have a triangular cross section in which a cross section becomes wider as the distance from the lamp increases. That is, the reflective projection 265 serves to diffuse the radiant heat of the lamp. For example, the reflective protrusion 265 may include a first side wall 265a and a second side wall 265b, and the first side wall 265a and the second side wall 265b may be inclined to be closer to the lamp 252 toward the top. Can be provided. The first side wall 265a and the second side wall 265b may be provided symmetrically with respect to the line passing between the main reflecting plate 265, and the inclination angle may be provided the same. The lamp 252 is positioned on the vertex of the reflective protrusion 265.

Among the radiant heat radiated from the lamp 252, q-radiation heat directed toward the bottom of the lamp 252 is reflected by the first side wall 265a and the second side wall 265b of the reflective protrusion 265 and spreads in all directions.

The side mirror 267 is located outside of the lamps 252. The side mirror 267 is located outward from the center of the chuck stage 210 from the reflective protrusion 265. The height of the side mirror 267 is provided higher than the ramp. The side mirror 267 may be included in the reflective member, but in some cases, the side mirror 267 may be provided on the inner wall of the quartz window 220 or may be provided in a form in which a reflective material is coated.

The reflective member 260 may provide the radiant heat to the substrate W more uniformly by providing the reflective protrusion 265 under the lamp 252 to diffuse radiant heat (light energy). In addition, the reflection protrusion 265 may be provided to reduce the amount of heat deformation of the base reflector 261.

The reflective member 260 may be provided with cooling fins (not shown) for heat dissipation. In order to suppress heat generation of the reflective member 260, a cooling gas may be configured to flow through the bottom surface of the lower reflector 261. For example, the nozzle body 242 has an injection port 248 that injects cooling gas to the bottom of the base reflector 261.

The light blocking member 270 blocks or reflects the radiant heat so that some of the radiant heat of the heating member 250 does not face the substrate. The light blocking member 270 is provided between the quartz window 220 and the heating member 250. The light blocking member 270 may be partially provided in some areas. Here, some zones may correspond to zones in which the radiant heat of the heating member 250 is relatively provided. For example, the light blocking member 270 may be positioned above each of the lamps 252. The light blocking member 270 may be provided in a ring shape, but is not limited thereto. In the present exemplary embodiment, the light blocking member 270 is illustrated as having a triangular cross section in which a cross section becomes wider as the distance from the lamp 252 increases. However, the light blocking member 270 is not limited thereto. It may have a cross-sectional shape.

In the present exemplary embodiment, the light blocking member 270 is illustrated as being installed on the inner bottom surface of the quartz window 220, but the light blocking member 270 is supported on the reflective member 260 instead of the quartz window 220. Can be installed as When the light blocking member 270 is installed in the quartz window 220, the light blocking member 270 may be rotated together with the quartz window 220. On the contrary, when the light blocking member 270 is installed while being supported by the reflective member 260, the light blocking member 270 is not rotated.

As another example, the light blocking member 270 may be provided in a form in which a reflective material is coated on an inner bottom surface of the quartz window 220.

The reflective member 260 and the light blocking member 270 may be provided as a surface of a metal material. The surface is made of metal with good thermal reflectivity. For example, the surface may be provided of gold, silver, or aluminum. Alternatively, it may be provided with another material having a good thermal reflectivity of the metal material.

8A and 8B illustrate another example of the light blocking member.

8A and 8B, the light blocking member 270a may be provided in a flake form. The shading member 270 in the form of a piece may be partially installed in a region where a relatively large amount of radiant heat is provided at the inner bottom of the quartz window 220.

9 is a view illustrating another example of the light blocking member.

As shown in FIG. 9, the light blocking member 270b may be provided in the form of a band in which the ring is divided. As such, by attaching the light blocking member 270b to the inner bottom of the quartz window 220, the radiant heat is reflected to another place, and the radiant heat may be uniformly provided to the entire substrate while the substrate is rotated.

As described above, the heating unit 280 partially arranges the light blocking member on the upper part of the lamp, and arranges the reflector for distributing light on the opposite side of the lamp rather than the shape of the reflector. Can be made uniform.

The foregoing detailed description illustrates the present invention. In addition, the above-mentioned contents show preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosures described above, and / or the skill or knowledge in the art. The described embodiments illustrate the best state for implementing the technical idea of the present invention, and various modifications required in the specific application field and use of the present invention are possible. Thus, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

10: substrate processing apparatus
100 processing container
200: substrate support unit
260: reflective member
270 light blocking member
280: heating unit
300: processing liquid supply unit
600: lifting unit

Claims (13)

A rotatable chuck stage on which a substrate is placed;
A heat generating unit having ring-shaped lamps disposed spaced apart from an upper portion of the chuck stage and arranged concentrically at different radial distances with respect to the center of the chuck stage;
A quartz window for protecting the lamps on the heat generating unit;
A reflection member reflecting the radiant heat of the heat generating portion toward the substrate; And
A light blocking member provided only in a predetermined region of the quartz window and blocking a part of the radiant heat of the heat generating part from being directed toward a substrate;
The light blocking member
And a triangular cross section provided on an inner bottom surface of the quartz window such that the radiant heat of the heat generating portion is positioned above each of the lamps provided with a relatively large amount, and the cross section becomes wider as the distance from the lamp increases. delete delete delete The method of claim 1,
The light blocking member
The substrate heating unit is provided on the inner bottom surface of the quartz window provided as a light shielding plate for shielding or reflecting radiant heat. The method of claim 1,
The light blocking member
And a reflective material coated on an inner bottom surface of the quartz window. The method of claim 1,
The reflective member
And a reflective protrusion formed in a ring shape under the lamp and protruding in the form of a protrusion to spread light energy emitted from the lamp. The method of claim 7, wherein
The reflective protrusions
Substrate heating unit having a triangular cross section that the cross section is wider as the distance away from the lamp. The method of claim 7, wherein
The reflective member
And a side mirror positioned outside the lamps to block light energy emitted laterally to the chuck stage. A rotatable chuck stage on which a substrate is placed;
A heat generating unit having ring-shaped lamps disposed spaced apart from an upper portion of the chuck stage and arranged concentrically at different radial distances with respect to the center of the chuck stage;
A reflection member reflecting the radiant heat of the heat generating portion toward the substrate; And
A quartz window on the heat generating unit to protect the lamps;
The quartz window
It includes a light blocking member for blocking a portion of the radiant heat of the heat generating portion does not face the substrate;
And a triangular cross section in which the cross section is located above each of the lamps provided with a relatively large amount of radiant heat, and the cross section becomes wider away from the lamp. The method of claim 10,
The light blocking member
Substrate heating unit provided in the form of a ring or a piece. The method of claim 10,
The light blocking member
And a light blocking plate positioned above the lamp to shield or reflect the radiant heat. delete

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