KR20190117373A - Substrate supporting unit and substrate processing apparatus using the same - Google Patents

Abstract

The present invention relates to a substrate supporting unit. According to one embodiment of the present invention, the substrate supporting unit includes: a chuck stage having an inner space defined by a base surface and side walls; a heating unit provided in the inner space; and a quartz window which covers the inner space and in which the substrate is mounted on an upper surface, wherein the heating unit includes: a disc-shaped base plate having an opening at the center; and a heating part installed on the base plate and having heating light sources discharging light energy. The present invention includes a reflection member reflecting the light energy lost in a side direction of the chuck stage to be toward the substrate.

Description

Substrate support unit and substrate processing apparatus having the same {SUBSTRATE SUPPORTING UNIT AND SUBSTRATE PROCESSING APPARATUS USING THE SAME}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs a process while heating a substrate during a substrate processing process.

In general, the photoresist coating process, the developing process, the etching process, the ashing process, etc., are used to process glass substrates or wafers in flat panel display device manufacturing or semiconductor manufacturing processes. Various processes are performed.

Each process includes a wet cleaning process using chemical or deionized water to remove various contaminants attached to the substrate, and a drying process to dry the chemical or pure water remaining on the substrate surface. ) The process is carried out.

Recently, an etching process for selectively removing a silicon nitride film and a silicon oxide film using a chemical aqueous solution used at a high temperature such as sulfuric acid or phosphoric acid is being performed.

In a substrate processing apparatus using a high temperature aqueous chemical solution, a substrate heating apparatus for heating a substrate using an IR lamp is applied and utilized to improve an etching rate.

However, in the conventional substrate heating apparatus, IR lamps are arranged at equal intervals, and the outermost lamp is smaller than the substrate, and the innermost lamp has a predetermined size in consideration of the center nozzle. Therefore, as shown in the table of FIG. 1, there is a problem that the light intensity distribution in the substrate drops sharply near the edge and the center.

An object of the present invention is to provide a substrate heating unit capable of uniformly heating a substrate during a substrate processing process and a substrate processing apparatus having the same.

An object of the present invention is to provide a substrate heating unit and a substrate processing apparatus having the same, whereby the edge and the center of the substrate can increase the light concentration in the substrate processing process.

The problem to be solved by the present invention is not limited thereto, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to one aspect of the invention, the chuck stage having an interior space defined by the base surface and the side walls; A heating unit provided in the inner space; And a quartz window covering the interior space and on which the substrate is seated; The heating unit includes a base plate formed in a disk shape having an opening in the center; And a heating unit installed on the base plate and having heating light sources emitting light energy, wherein the quartz window includes a reflection member reflecting light energy lost laterally of the quartz window toward the substrate. Substrate support devices may be provided.

In addition, the reflective member may be provided on an inner surface of an edge of the quartz window surrounding the heat generating unit.

In addition, the edge inner side surface may be formed to be inclined closer to the center from the upper side to the lower side.

In addition, the edge inner surface may be concave toward the edge of the substrate.

In addition, the reflective member may be formed of a reflective plate or a reflective coating film.

In addition, the rotating portion having a hollow shape, coupled to the chuck stage to rotate the chuck stage; And a back nozzle which penetrates the inside of the rotating part and is provided at the center of the upper part of the chuck stage and sprays the processing liquid to the rear surface of the substrate.

The heating light sources may also consist of ring shaped lamps arranged concentrically at different radial distances with respect to the center of the base plate.

In addition, the base plate may be made of a reflector for reflecting the light energy of the lamps upward.

In addition, the base plate may be located under the lamp, and may include a projection projecting in the form of a projection to spread the light energy emitted from the lamp.

In addition, the reflective projection may have a triangular cross section that the cross section is wider as the distance away from the lamp.

In addition, the base plate may further include an inclined reflective surface provided in the central portion of the base plate to increase the light concentration to the center area of the substrate.

In addition, the base plate may further include a convex curved reflective surface provided at the center portion of the base plate to increase the light concentration to the center area of the substrate.

In addition, the reflective member may be provided on the inner surface of the edge of the quartz window surrounding the heat generating portion, and may have a curved reflective surface to focus light energy toward a target, which is an arbitrary point of the edge section of the substrate.

In addition, the curved surface of the reflective member may be provided in a shape of an ellipse.

In addition, the curved surface of the reflective member may be shaped to reflect the equation of the ellipse such that the distance between the light emitting point of the heating light source and the target is the focus of the ellipse.

The target may be a point close to the center of the pattern section except for the section where the pattern is not formed among the edge sections of the substrate.

According to another aspect of the present invention, there is provided a treatment container having an open top; A substrate support unit located in the processing vessel and supporting a substrate; A processing liquid supply unit supplying the processing liquid to the substrate placed on the substrate supporting unit; A heating unit provided in the substrate support unit and emitting light energy for heating the substrate, wherein the substrate support unit includes a chuck stage having an interior space defined by a base surface and sidewalls; A quartz window covering the internal space and on which a substrate is mounted; And a reflection member provided in the quartz window and reflecting light energy lost in the lateral direction of the quartz window toward the substrate.

In addition, the reflective member may be provided on an inner surface of an edge of the quartz window surrounding the heat generating unit.

In addition, the edge inner side surface may be formed to be inclined toward the center from the upper side to the lower side or may be formed concave toward the edge of the substrate.

The heating unit may further include: a heat generating portion having ring shaped lamps provided in the substrate supporting unit and arranged concentrically at different radial distances with respect to the center of the substrate supporting unit; And a reflecting plate positioned below the lamp and having a reflecting protrusion protruding in the form of a protrusion to spread light energy emitted from the lamp.

In addition, the substrate support unit may have a hollow shape, a rotating part for coupling with the chuck stage to rotate the chuck stage; And a back nozzle provided in the center of the upper part of the chuck stage through the inside of the rotating part and spraying the processing liquid to the rear surface of the substrate, wherein the reflective protrusion has a ring shape having the same diameter as that of the lamp, and the lamp It may have a triangular cross section that the cross section becomes wider as it moves away from.

In addition, the reflecting plate may further include an inclined reflecting surface provided in the central portion of the reflecting plate so as to increase the light concentration to the center region of the substrate.

In addition, the reflective member may be provided on the inner surface of the edge of the quartz window surrounding the heat generating portion, and may have a curved reflective surface to focus light energy toward a target, which is an arbitrary point of the edge section of the substrate.

The target may be a point close to the center of the pattern section except for the section where the pattern is not formed among the edge sections of the substrate.

According to an embodiment of the present invention, by applying a reflector structure to spread the light of the lamp has a special effect that can improve the temperature distribution of the substrate.

According to one embodiment of the present invention, since the light concentration of the center and the edge of the substrate is increased, the substrate processing apparatus has a special effect of improving the etching rate.

The effects of the present invention are not limited to the above-described effects, and effects that are not mentioned will be clearly understood by those skilled in the art from the present specification and the accompanying drawings.

1 is a table showing a light intensity distribution diagram in a conventional substrate heating apparatus.
2 is a plan view schematically showing an example of a substrate processing apparatus provided with a substrate processing apparatus according to an embodiment of the present invention.
3 is a plan view of the substrate processing apparatus of FIG. 2.
4 is a cross-sectional view of the substrate processing apparatus of FIG. 2.
5 is a cross-sectional view illustrating an embodiment of the substrate support unit and the heating unit of FIG. 3.
6 is an enlarged view of a portion of the heating unit of FIG. 5.
7 is a view showing a modification of the substrate support unit.
8A and 8B schematically illustrate a method of designing the reflective member shown in FIG. 7.
9 is a description of the position of the target in which the light condensation described above is performed.
10 is a view showing a modification of the reflection member.

As the inventive concept allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In the following description of the present invention, if it is determined that the detailed description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, and in describing the present invention with reference to the accompanying drawings, the same or corresponding elements are denoted by the same reference numerals regardless of the reference numerals, and duplicates thereof. The description will be omitted.

2 is a plan view schematically showing the substrate processing equipment 1 of the present invention.

Referring to FIG. 2, the substrate processing facility 1 includes an index module 1000 and a process processing module 2000. The index module 1000 includes a load port 1200 and a transfer frame 1400. The load port 1200, the transfer frame 1400, and the process module 2000 are sequentially arranged in a row. Hereinafter, the direction in which the load port 1200, the transfer frame 1400, and the process module 2000 are arranged is referred to as a first direction 12. When viewed from the top, the direction perpendicular to the first direction 12 is referred to as the second direction 14, and the direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as the third direction. It is called (16).

The carrier 1300 in which the substrate W is accommodated is mounted in the load port 1200. A plurality of load ports 1200 are provided and they are arranged in a line along the second direction 14. In FIG. 1, four load ports 1200 are provided. However, the number of load ports 1200 may increase or decrease depending on conditions such as process efficiency and footprint of the process processing module 2000. The carrier 1300 is formed with a slot (not shown) provided to support the edge of the substrate W. A plurality of slots are provided in the third direction 16. The substrates W are positioned in the carrier 1300 to be stacked in a state spaced apart from each other along the third direction 16. As the carrier 1300, a front opening unified pod (FOUP) may be used.

The process module 2000 includes a buffer unit 2200, a transfer chamber 2400, and a process chamber 2600. The transfer chamber 2400 is disposed in parallel with the first direction 12 in the longitudinal direction thereof. Process chambers 2600 are disposed on one side and the other side of the transfer chamber 2400 along the second direction 14, respectively. Process chambers 2600 located on one side of the transfer chamber 2400 and process chambers 2600 located on the other side of the transfer chamber 2400 are provided to be symmetrical with respect to the transfer chamber 2400. Some of the process chambers 2600 are disposed along the longitudinal direction of the transfer chamber 2400. In addition, some of the process chambers 2600 are arranged to be stacked on each other. That is, the process chambers 2600 may be arranged in an array of A X B (A and B are one or more natural numbers) on one side of the transfer chamber 2400. Where A is the number of process chambers 2600 provided in a line along the first direction 12, and B is the number of process chambers 2600 provided in a line along the third direction 16. When four or six process chambers 2600 are provided at one side of the transfer chamber 2400, the process chambers 2600 may be arranged in an array of 2 × 2 or 3 × 2. The number of process chambers 2600 may increase or decrease. Unlike the above, the process chamber 2600 may be provided only on one side of the transfer chamber 2400. In addition, unlike the above-described process chamber 2600 may be provided as a single layer on one side and both sides of the transfer chamber 2400.

The buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400. The buffer unit 2200 provides a space in which the substrate W stays before the substrate W is transferred between the transfer chamber 2400 and the transfer frame 1400. The buffer unit 2200 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are spaced apart from each other along the third direction 16. In the buffer unit 2200, a surface facing the transfer frame 1400 and a surface facing the transfer chamber 2400 are opened.

The transfer frame 1400 transports the substrate W between the carrier 1300 and the buffer unit 2200 mounted on the load port 1200. The transfer frame 1400 is provided with an index rail 1420 and an index robot 1440. The index rail 1420 is provided in parallel with the second direction 14 in the longitudinal direction thereof. The index robot 1440 is installed on the index rail 1420 and linearly moves in the second direction 14 along the index rail 1420. The index robot 1440 has a base 1441, a body 1442, and an index arm 1443. The base 1442 is installed to be movable along the index rail 1420. Body 1442 is coupled to base 1441. The body 1442 is provided to be movable along the third direction 16 on the base 1442. In addition, the body 1442 is provided to be rotatable on the base 1442. The index arm 1443 is coupled to the body 1442 and is provided to be capable of moving forward and backward with respect to the body 1442. The plurality of index arms 1443 are provided to be individually driven. The index arms 1443 are stacked to be spaced apart from each other along the third direction 16. Some of the index arms 1443 are used to convey the substrate W from the process processing module 2000 to the carrier 1300, and others are used to convey the substrate W from the carrier 1300 to the process processing module 2000. It can be used when conveying. This may prevent particles generated from the substrate W before the process treatment from being attached to the substrate W after the process treatment while the index robot 1440 loads and unloads the substrate W.

The transfer chamber 2400 carries the substrate W between the buffer unit 2200 and the process chamber 2600 and between the process chambers 2600. The transfer chamber 2400 is provided with a guide rail 2420 and a main robot 2440. The guide rail 2420 is disposed such that its length direction is parallel to the first direction 12. The main robot 2440 is installed on the guide rail 2420 and is linearly moved along the first direction 12 on the guide rail 2420. The main robot 2440 has a base 2441, a body 2442, and a main arm 2443. The base 2441 is installed to be movable along the guide rail 2420. Body 2442 is coupled to base 2441. The body 2442 is provided to be movable along the third direction 16 on the base 2441. In addition, the body 2442 is provided to be rotatable on the base 2441. The main arm 2443 is coupled to the body 2442, which is provided to be capable of moving forward and backward with respect to the body 2442. A plurality of main arms 2443 are provided to be individually driven. The main arms 2443 are stacked to be spaced apart from each other along the third direction 16. The main arm 2443 is used to convey the substrate W from the buffer unit 2200 to the process chamber 2600 and the substrate W is used to convey the substrate W from the process chamber 2600 to the buffer unit 2200. The main arms 2443 may be different from each other.

In the process chamber 2600, a substrate processing apparatus 10 that performs a cleaning process on the substrate W is provided. The substrate processing apparatus 10 provided in each process chamber 2600 may have a different structure depending on the type of cleaning process to be performed. Optionally, the substrate processing apparatus 10 in each process chamber 2600 may have the same structure. Optionally, the process chambers 2600 are divided into a plurality of groups so that the substrate processing apparatuses 10 provided to the process chambers 2600 belonging to the same group have the same structure and are provided to the process chambers 2600 belonging to different groups. The substrate processing apparatuses 10 may have different structures from each other. For example, when the process chamber 2600 is divided into two groups, one side of the transfer chamber 2400 is provided with process chambers 2600 of the first group, and the other side of the transfer chamber 2400 is provided with the second group. Process chambers 2600 may be provided. Optionally, a first group of process chambers 2600 may be provided at a lower layer, and a second group of process chambers 2600 may be provided at a lower layer at each of one side and the other side of the transfer chamber 2400. The process chamber 2600 of the first group and the process chamber 2600 of the second group may be classified according to the type of chemicals used or the type of cleaning method.

In the following embodiment, an apparatus for cleaning the substrate W using processing fluids such as high temperature sulfuric acid, alkaline chemicals, acidic chemicals, rinse liquids, and dry gas will be described as an example. However, the technical idea of the present invention is not limited thereto, and the present invention may be applied to all kinds of apparatuses that perform a process while rotating the substrate W, such as an etching process.

3 is a plan view of the substrate processing apparatus of FIG. 2, and FIG. 4 is a cross-sectional view of the substrate processing apparatus of FIG. 2.

3 and 4, the substrate processing apparatus 10 includes a chamber 800, a processing container 100, a substrate supporting unit 200, a heating unit 280, a processing liquid supply unit 300, and a process exhaust unit. 500 and elevation unit 600.

Chamber 800 provides a closed interior space. The airflow supply unit 810 is installed at the top. The airflow supply unit 810 forms a downdraft in the chamber 800.

The airflow supply unit 810 filters the high humidity outdoor air to supply the inside of the chamber. The high humidity outdoor air passes through the airflow supply unit 810 and is supplied into the chamber to form a downward airflow. The downdraft provides a uniform stream of air over the substrate (W) and collects contaminants generated in the process of treating the surface of the substrate (W) by the processing fluid together with the air. Through the exhaust to the process exhaust (500).

Chamber 800 is divided into process area 816 and maintenance area 818 by horizontal bulkhead 814. The processing container 100 and the substrate support unit 200 are located in the process region 816. In addition to the discharge lines 141, 143, and 145 and the exhaust line 510, the maintenance unit 818 includes a driving unit of the elevating unit 600, a driving unit connected to the processing liquid supply unit 300, and a supply line. The back is located. Maintenance area 818 is isolated from process area 816.

The processing container 100 has a cylindrical shape with an open top, and provides a process space for processing the substrate W. FIG. An open upper surface of the processing container 100 serves as a carrying-out and carrying-in passage of the substrate W. The substrate support unit 200 is located in the process space. The substrate support unit 200 rotates the substrate W while supporting the substrate W during the process.

The processing container 100 provides a lower space in which an exhaust duct 190 is connected to a lower end of the processing container 100 to allow forced exhaust. In the processing container 100, the first to third recovery containers 110, 120, and 130 for introducing and sucking the processing liquid and gas scattered on the rotated substrate W are disposed in multiple stages.

The annular first to third recovery bins 110, 120, 130 have exhaust ports H communicating with one common annular space.

Specifically, each of the first to third recovery containers 110, 120, and 130 includes a bottom surface having an annular ring shape and a sidewall extending from the bottom surface and having a cylindrical shape. The second recovery container 120 surrounds the first recovery container 110 and is spaced apart from the first recovery container 110. The third collection container 130 surrounds the second collection container 120 and is spaced apart from the second collection container 120.

The first to third recovery containers 110, 120, and 130 provide first to third recovery spaces RS1, RS2, and RS3 into which air flows containing the treatment liquid and the fume scattered from the substrate W flow. . The first recovery space RS1 is defined by the first recovery container 110, and the second recovery space RS2 is defined by the separation space between the first recovery container 110 and the second recovery container 120. The third recovery space RS3 is defined by the separation space between the second collection container 120 and the third collection container 130.

The upper surface of each of the first to third recovery containers 110, 120, 130 is open at the center. The first to third recovery containers 110, 120, and 130 are formed of inclined surfaces in which a distance from a corresponding bottom surface gradually increases from the connected side wall toward the opening. The processing liquid scattered from the substrate W flows into the recovery spaces RS1, RS2, and RS3 along the upper surfaces of the first to third recovery containers 110, 120, and 130.

The first treatment liquid introduced into the first recovery space RS1 is discharged to the outside through the first recovery line 141. The second treatment liquid introduced into the second recovery space RS2 is discharged to the outside through the second recovery line 143. The third treatment liquid introduced into the third recovery space RS3 is discharged to the outside through the third recovery line 145.

The processing liquid supply unit 300 discharges a high temperature chemical for etching the surface of the substrate W. For example, the treatment liquid may be sulfuric acid, phosphoric acid, or a mixture of sulfuric acid and phosphoric acid.

The treatment liquid nozzle member 310 includes a nozzle 311, a nozzle arm 313, a support rod 315, and a nozzle driver 317. The nozzle 311 receives a processing liquid through the supply unit 320. The nozzle 311 discharges the processing liquid to the substrate W surface. The nozzle arm 313 is an arm provided with a long length in one direction, and the nozzle 311 is mounted at the tip. The nozzle arm 313 supports the nozzle 311. At the rear end of the nozzle arm 313, a support rod 315 is mounted. The support rod 315 is located below the nozzle arm 313. The support rod 315 is disposed perpendicular to the nozzle arm 313. The nozzle driver 317 is provided at the bottom of the support rod 315. The nozzle driver 317 rotates the support rod 315 about the longitudinal axis of the support rod 315. Rotation of the support rod 315 causes the nozzle arm 313 and the nozzle 311 to swing the support rod 315 along the axis. The nozzle 311 may swing between an outer side and an inner side of the processing container 100. In addition, the nozzle 311 may swing the section between the center of the substrate W and the edge region to discharge the processing liquid.

The process exhaust part 500 is responsible for exhausting the inside of the processing container 100. For example, the process exhaust part 500 is to provide an exhaust pressure (suction pressure) to a recovery container that recovers the processing liquid of the first to third recovery containers 110, 120, and 130 during the process. The process exhaust part 500 includes an exhaust line 510 and a damper 520 connected to the exhaust duct 190. The exhaust line 510 receives the exhaust pressure from an exhaust pump (not shown) and is connected to the main exhaust line embedded in the bottom space of the semiconductor production line.

On the other hand, the processing container 100 is coupled with the lifting unit 600 for changing the vertical position of the processing container 100. The lifting unit 600 linearly moves the processing container 100 in the vertical direction. As the processing container 100 is moved up and down, the relative height of the processing container 100 with respect to the substrate support unit 200 is changed.

The elevating unit 600 includes a bracket 612, a moving shaft 614, and a driver 616. The bracket 612 is fixed to the outer wall of the processing container 100. The bracket 612 is fixedly coupled to the moving shaft 614 to be moved in the vertical direction by the driver 616. The processing container 100 is lowered so that the chuck stage 210 protrudes above the processing container 100 when the substrate W is loaded into the chuck stage 210 or unloaded from the chuck stage 210. In addition, when the process is in progress, the height of the processing container 100 is adjusted to allow the processing liquid to flow into the predetermined recovery containers 110, 120, and 130 according to the type of processing liquid supplied to the substrate W. FIG. . The relative vertical position between the processing container 100 and the substrate W is changed. The processing container 100 may vary the types of treatment liquid and pollutant gas recovered for each of the recovery spaces RS1, RS2, and RS3. According to one embodiment, the elevating unit 600 vertically moves the processing container 100 to change the relative vertical position between the processing container 100 and the substrate support unit 200.

5 is a cross-sectional view illustrating an embodiment of the substrate support unit and the heating unit of FIG. 3, and FIG. 6 is an enlarged view of a portion of the heating unit of FIG. 5.

3 to 6, the substrate support unit 200 supports the substrate W during the process and may be rotated by the driver 240 during the process.

The substrate support unit 200 includes a chuck stage 210, a quartz window 220, a rotating part 230, a back nozzle part 240, and a heating unit 280.

The chuck stage 210 has a circular top surface. The chuck stage 210 is coupled to the rotating unit 230 and rotated.

The rotating unit 230 has a hollow shape and is coupled to the chuck stage 210 to rotate the chuck stage 210.

The quartz window 220 is positioned above the substrate W and the chuck stage 210. The quartz window 220 is provided to protect the heating member 250. The quartz window 220 may be provided transparently. The quartz window 220 may rotate with the chuck stage 210. The quartz window 220 includes support pins 224. The support pins 224 are spaced apart from each other by the upper edge portion of the quartz window 220. The support pins 224 are provided to protrude upward from the quartz window 220. The support pins 224 support the bottom surface of the substrate W so that the substrate W is supported in a state spaced upward from the quartz window 220.

Chucking pins 212 are located in the quartz window 220. The chucking pins 212 align the substrate W such that the substrate W supported by the plurality of support pins 224 is in place. During the process, the chucking pins 212 are in contact with the side of the substrate W to prevent the substrate W from being displaced from its position.

The quartz window 220 is provided with a reflective member 290 that reflects toward the laterally lost light energizer substrate. The reflective member 290 may be provided on the edge inner side surface 229 of the quartz window 220 surrounding the heating member 250. The edge inner side surface 229 is formed to be inclined closer to the inner side from the upper side to the lower side. The reflective member 290 may be provided in a form in which a reflective material is coated on the inner surface 229 of the quartz window 220 or the reflective film installed on the inner side 229 of the quartz window 220. Light energy emitted from the heating member 250 is reflected to the substrate edge portion by the reflective member 290 provided on the inner side of the quartz window 220 (see arrow of FIG. 6). Therefore, the degree of light concentration at the edge of the substrate is increased to improve the temperature uniformity.

The back nozzle part 240 is provided to inject the chemical liquid to the back surface of the substrate (W). The back nozzle part 240 includes a nozzle body 242 and a chemical liquid injection part 244. The chemical liquid injection part 244 is positioned at the center of the chuck stage 210 and the quartz window 220. The nozzle body 242 is penetrated and arranged in the hollow rotating part 230, and a chemical liquid moving line, a gas supply line, and a purge gas supply line may be provided inside the nozzle body 242. The chemical liquid moving line supplies the etching liquid for etching treatment on the back surface of the substrate W to the chemical liquid injection part 244, and the gas supply line supplies nitrogen gas for adjusting the etching uniformity to the back surface of the substrate W, and purge gas. The supply line supplies nitrogen purge gas to prevent the etching liquid from penetrating between the quartz window 220 and the nozzle body 242.

 The heating unit 280 is installed inside the substrate support unit 200. The heating unit 280 heats the substrate W during the process. The heating unit 280 includes a heating member 250 and a base plate 260.

The heating member 250 is installed above the chuck stage 210. The heating member 250 may be a heating light source that emits light energy. The heating members 250 are provided with different diameters. The heating member 250 may be provided in plural. The heating member 250 may be provided in a ring shape. For example, the heating member 250 may be provided with a plurality of lamps 252 provided in a ring shape. Each lamp 252 is configured with a temperature controller (not shown), so that control may be possible.

In the present embodiment, the heating member is described as a ring-shaped lamp, but is not limited thereto. The heating member may be a ring type light source or a point type light source when viewed in shape. In addition, the heating member may apply a light source such as a big cell (VCSEL) among LEDs, laser diodes, and laser diodes.

Heating member 250 may be subdivided into concentric multiple zones. Each zone is provided with lamps 252 that can heat each zone individually. The ramps 252 may be provided in a ring shape arranged concentrically at different radial distances with respect to the center of the chuck stage 210. Although six lamps 252 are shown in this embodiment, this is only one example and the number of lamps may be added or subtracted depending on the desired temperature controlled degree. On the other hand, the diameter of the lamp located at the outermost of the six lamps 252 to increase the temperature at the edge portion of the substrate may be provided the same as the diameter of the substrate.

The heating member 250 may control the temperature of each individual zone to continuously increase or decrease the temperature depending on the radius of the substrate W during the process. In the structure in which the lamps 252 are rotated together with the chuck stage 210, a slip ring may be used to supply power to the heating member 250.

The base plate 260 is provided between the heating member 250 and the chuck stage 210. The base plate 260 may be a reflection plate that reflects and transfers heat (light energy) generated from the lamps 252 to the upper substrate W. The base plate 260 may be supported by the nozzle body 242 installed through the central space of the rotating part 230. The base plate 260 is formed to extend downward on the inner end. The base plate 260 is fixedly provided not to rotate with the chuck stage 210.

The base plate 260 may include reflective protrusions 265 and a reflective inclined surface 267.

The reflective protrusion 265 protrudes from an upper surface of the base plate 260, and a plurality of reflection protrusions 265 are provided. The reflective protrusion 265 is provided in a ring shape. The reflective protrusion 265 is located directly under the lamp 252. The reflective protrusion 265 may have a triangular cross section in which a cross section becomes wider as the distance from the lamp increases. That is, the reflective projection 265 serves to spread the light energy of the lamp. For example, the reflective protrusion 265 includes a first side wall 265a and a second side wall 265b, and the first side wall 265a and the second side wall 265b are inclined to be closer to the lamp 252 toward the top. Can be provided. The first side wall 265a and the second side wall 265b may be provided symmetrically with respect to the line passing between the main reflecting plate 265, and the inclination angle may be provided the same. The lamp 252 is positioned on the vertex of the reflective protrusion 265.

Among the light energy emitted from the lamp 252, the light energy directed downward of the lamp 252 is reflected by the first side wall 265a and the second side wall 265b of the reflective protrusion 265 and spreads in all directions.

Reflective slope 267 is located inside the lamps 252. The reflective inclined surface 267 may be formed in a planar, concave curved surface, or convex curved surface, and the curved surface may be formed in a part of curved shape of a circle or an ellipse. In addition, when the curved surface is provided in an elliptical shape, the curvature may be changed to increase the light concentration toward the substrate center region.

The base plate 260 may be provided as a metal surface. The surface is made of metal with good thermal reflectivity. For example, the surface may be provided of gold, silver, or aluminum. Alternatively, it may be provided with another material having a good thermal reflectivity of the metal material.

The base plate 260 may provide light energy to the substrate W more uniformly by providing the reflective protrusion 265 under the lamp 252 to spread the light energy (heat). In addition, the reflection protrusion 265 may be provided to reduce the amount of heat deformation of the base reflector 261.

The base plate 260 may be provided with cooling fins (not shown) for heat dissipation. In order to suppress heat generation of the base plate 260, a cooling gas may be configured to flow through the bottom surface of the lower reflector 261. For example, the nozzle body 242 has an injection port 248 that injects cooling gas to the bottom of the base reflector 261.

As described above, the present invention can improve the thermal uniformity of the substrate by compensating the temperature by increasing the degree of light concentration near the substrate edge and the center.

7 is a view showing a modification of the substrate support unit.

The substrate supporting unit 200a according to the modification includes the chuck stage 210, the quartz window 220, the rotating part 230, the back nozzle part 240, and the heating unit 280, which are shown in FIG. 5. Since the chuck stage 210, the quartz window 220, the rotating part 230, the back nozzle part 240, and the heating unit 280 are generally provided in a similar configuration and function, the following modifications focus on differences from the present embodiment. An example will be described.

In the present modification, the inner surface 229a of the quartz window 220 is formed to be concave toward the edge of the substrate. In addition, the reflective member 290a may also be provided in a concave shape to correspond to the curved surface of the inner surface 229a. Preferably, the reflective member may have a longitudinal section in the shape of a portion of an ellipse.

On the other hand, the reflective inclined surface 267a may be provided as a concave curved surface in the center portion of the base plate 260 to increase the light concentration to the substrate center region. Light emitted from the innermost lamp may be reflected to the concave curved surface of the reflective inclined surface 267a and provided to the center region of the substrate. Accordingly, the substrate etch rate can be improved by increasing the light concentration to the substrate center region.

8A and 8B schematically illustrate the curved surface design method of the reflective member shown in FIG. 7.

8A to 8B illustrate the principle of the formation of an ellipse, in which an ellipse is pinned at two focal points P1 and P2 on a plane, looped at both ends of a thread of appropriate length, and then hooked to both pins, and then the fan end. (P) is defined as a figure drawn by a fan when the thread is pulled and rotated.

That is, 'ellipse is defined as the trace of the points where the sum of the lengths of the yarns from the two focal points P1 and P2 to the end of the fan P is constant'. An oval like this is made.

As described above, the oval is formed based on the two focal points in which the fan end P is positioned at two focal planes P1 (in the present invention, corresponding to a lamp) and P2 (in the present invention, corresponding to a target on the substrate edge where light is collected). This is because the sum of the distance plus the length is always constant, and the direction in which the fan tip P moves during the formation of this ellipse is the direction of the tangent LL 'at the point P of the ellipse, as shown in FIG. As already demonstrated, we can see that ∠FPT = F'PT 'holds (see ellipse equation).

Thus, if the inside of the ellipse consists of a mirror or reflecting surface, if the light source (lamp) is placed at one focal point P1 of the ellipse, the light rays coming out of the focal point P1 are reflected off the inner surface of the ellipse and the other focal point P2 (substrate edge region) Target), it can be seen that the state as shown in Figure 8b. In this manner, the elliptic curved surface of the reflective member 290a can be designed, and the curved reflective member can condense the light energy of the lamp toward the target of the substrate edge section.

9 is a description of the position of the target in which the light condensation described above is performed.

Referring to FIG. 9, the target P2 point may be located within an edge section of the substrate. More preferably, the target P2 point may be located close to the center of the pattern section except for the section where the pattern is not formed among the edge sections of the substrate.

10 is a view showing a modification of the reflection member.

According to a modification, the reflective member 290b may be provided in the base plate 260. The reflective member 290b may be installed in a separate configuration at the edge of the base plate 260 or may be integrally provided with the base plate. Since the reflective member 290b is provided in a similar configuration and function to the reflective member 290a illustrated in FIG. 7, a detailed description thereof will be omitted.

The foregoing detailed description illustrates the present invention. In addition, the above-mentioned contents show preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications can be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosures described above, and / or the skill or knowledge in the art. The described embodiments illustrate the best state for implementing the technical idea of the present invention, and various modifications required in the specific application field and use of the present invention are possible. Thus, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

10: substrate processing apparatus
100 processing container
200: substrate support unit
260: base plate
280: heating unit
300: processing liquid supply unit
600: lifting unit

Claims (27)

A chuck stage having an interior space defined by the base surface and the side walls;
A heating unit provided in the inner space; And
A quartz window covering said interior space and having a substrate seated thereon;
The heating unit
A base plate formed in a disc shape having an opening in a center thereof; And
A heating unit installed on the base plate and having heating light sources emitting light energy;
And a reflecting member for reflecting light energy lost laterally of the chuck stage toward the substrate. The method of claim 1,
The reflective member
And a substrate supporting device provided on an inner surface of an edge of the quartz window surrounding the heat generating portion. The method of claim 2,
The inner surface of the edge
Substrate support device is formed to be inclined so as to be closer to the center from the upper side to the lower side. The method of claim 2,
The inner surface of the edge
Substrate support device formed concave toward the edge of the substrate. The method of claim 1,
The reflective member is a substrate support device consisting of a reflective plate or a reflective coating film. The method of claim 1,
A rotating part having a hollow shape and coupled with the chuck stage to rotate the chuck stage; And
And a back nozzle disposed in the center of the upper portion of the chuck stage through the inside of the rotating part and spraying the processing liquid to the rear surface of the substrate. The method of claim 2,
The heating light sources
And a ring shaped lamp arranged concentrically at different radial distances with respect to the center of the base plate. The method of claim 7, wherein
The base plate is
And a reflector for reflecting light energy of the lamps upward. The method of claim 8,
The base plate is
And a reflective protrusion located below the lamp and protruding in the form of a protrusion to spread light energy emitted from the lamp. The method of claim 9,
The reflective protrusions
Substrate supporting device having a triangular cross section that the cross section is wider as the distance away from the lamp. The method according to claim 1 or 8,
The base plate is
And an inclined reflective surface provided in the central portion of the base plate to increase light concentration toward the substrate center region. The method according to claim 1 or 8,
The base plate is
And a convex curved reflective surface provided in a central portion of the base plate to increase light concentration toward a substrate center region. The method of claim 1,
The reflective member
And a curved reflective surface provided on an inner surface of an edge of the quartz window surrounding the heat generating unit, and configured to condense light energy of the heating light source toward a target which is an arbitrary point of a substrate edge section. The method of claim 13,
And a reflective surface of the reflective member is provided in a shape of an ellipse. The method of claim 13,
And the curved surface of the reflective member is shaped by reflecting an ellipse equation such that the distance between the light emitting point of the heating light source and the target becomes the focal point of the ellipse. The method of claim 13,
The target is
The substrate supporting apparatus is a point close to the center of the pattern section except for the section in which the pattern is not formed among the edge section of the substrate. In the apparatus for processing a substrate,
A processing vessel with an open top;
A substrate support unit located in the processing vessel and supporting a substrate;
A processing liquid supply unit supplying the processing liquid to the substrate placed on the substrate supporting unit; And
A heating unit provided in the substrate support unit, the heating unit emitting light energy for heating the substrate;
The substrate support unit
A chuck stage having an interior space defined by the base surface and the side walls;
A quartz window covering the internal space and on which a substrate is mounted; And
And a reflecting member for reflecting light energy lost laterally of the chuck stage toward the substrate. The method of claim 17,
The reflective member
The substrate processing apparatus provided in the edge inner surface of the quartz window surrounding the heat generating portion. The method of claim 18,
The inner surface of the edge
Is formed to be inclined closer to the center from the upper side to the lower side, or
A substrate processing apparatus formed concave toward the edge of the substrate. The method of claim 17,
The heating unit,
A heat generating portion provided in the substrate supporting unit and having ring shaped lamps arranged concentrically at different radial distances with respect to the center of the substrate supporting unit; And
And a reflecting plate positioned below the lamp and having a reflecting protrusion protruding in the form of a protrusion to spread light energy emitted from the lamp. The method of claim 20,
The substrate support unit,
A rotating part having a hollow shape and coupled to the chuck stage to rotate the chuck stage; And
A back nozzle provided in the center of the upper part of the chuck stage through the inside of the rotating part and spraying the processing liquid to the rear surface of the substrate;
The reflective protrusions
A substrate processing apparatus having a triangular cross section that has a ring shape having the same diameter as that of the lamp and whose cross section becomes wider as it moves away from the lamp. The method of claim 20,
The reflective plate
And a reflecting surface provided at a central portion of the reflecting plate so as to increase the concentration of light in the center region of the substrate. The method of claim 22,
And the reflective surface is provided in any one of a plane, a concave curved surface, and a block curved surface. The method of claim 17,
The reflective member
And a curved reflective surface provided on an inner surface of an edge of the quartz window surrounding the heat generating portion, and configured to condense light energy toward a target which is an arbitrary point of an edge section of the substrate. The method of claim 24,
The curved surface of the reflective member is a substrate support device provided in the shape of a part of the ellipse. The method of claim 24,
And the curved surface of the reflective member is shaped by reflecting an ellipse equation such that the distance between the light emitting point of the heating light source and the target becomes the focal point of the ellipse. The method of claim 24,
The target is
A substrate processing apparatus which is a point close to the center of the pattern section except for the section where the pattern is not formed among the edge sections of the substrate.

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