KR101691993B1 - Chamber for chemical vapor deposition device - Google Patents

Chamber for chemical vapor deposition device Download PDF

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KR101691993B1
KR101691993B1 KR1020150113405A KR20150113405A KR101691993B1 KR 101691993 B1 KR101691993 B1 KR 101691993B1 KR 1020150113405 A KR1020150113405 A KR 1020150113405A KR 20150113405 A KR20150113405 A KR 20150113405A KR 101691993 B1 KR101691993 B1 KR 101691993B1
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South Korea
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temperature
reaction chamber
vapor deposition
chemical vapor
conductor
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KR1020150113405A
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Korean (ko)
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황동목
김범준
장현식
최재영
김기철
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성균관대학교산학협력단
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    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a reactive chamber for a chemical vapor deposition device. According to an embodiment of the present invention, a reactive chamber for a chemical vapor deposition device comprises: a base loading unit on which a base is loaded; a gas supplying unit which supplies reactive gas; a gas discharging unit which discharges reactive gas; and a temperature control device which controls the internal temperature of the reactive chamber. The temperature control device includes: a first temperature control device comprising a plurality of first conduction lines arranged in parallel at regular intervals on one side of the reactive chamber; and a second temperature control device arranged to be faced with the first temperature control device and comprising a plurality of second conduction lines arranged in parallel at regular intervals, crossing the first conduction lines.

Description

CHAMBER FOR CHEMICAL VAPOR DEPOSITION DEVICE OF CHEMICAL VAPOR DEPOSITION APPARATUS

The present invention relates to a reaction chamber of a chemical vapor deposition apparatus.

A sputtering method or a chemical vapor deposition (CVD) method is widely used as a method of forming a two-dimensional material or a thin film having a large area including graphene in a two-dimensional material or a thin film forming process in a semiconductor manufacturing process .

A chemical vapor deposition apparatus is a device for forming a film such as an insulating film by a chemical reaction of vapor phase on a semiconductor substrate, and various forms have been developed according to the reaction gas, pressure, and temperature to be used.

For example, the chemical vapor deposition apparatus is divided into an atmospheric pressure CVD (APCVD) apparatus and a low pressure chemical vapor deposition (LPCVD) apparatus according to the vacuum degree. In addition, plasma chemical vapor deposition (PECVD) devices and thermal chemical vapor deposition (TCVD) devices are available according to the activation energy supply method.

However, because chemical vapor deposition systems deal with chemical reactions in heterogeneous systems, it is necessary to control three factors: temperature, pressure and concentration. Particularly, since the deposition rate of a large-area two-dimensional material or thin film is greatly influenced by temperature, it is necessary to control the temperature in the gas phase in the reaction chamber and the surface temperature of the substrate. For example, the thickness of the film deposited at a high temperature of the substrate may be thicker than the thickness of the film deposited at a low temperature.

The basic configuration of the chemical vapor deposition apparatus is composed of a reaction chamber for causing a chemical reaction, a loading / unloading unit for the substrate, and a control unit for controlling the entire process. Inside the reaction chamber, a substrate is disposed including a heater for heating, a susceptor, a gas distributor and the like. In addition, a gas control system, a power supply, a cleaning system, and a vacuum exhaust system can be installed together.

On the other hand, in the related art, in Korean Patent Laid-Open No. 10-2007-0056220 (entitled "Chemical Vapor Deposition Apparatus"), a process chamber in which a process is performed; A heater block installed inside the process chamber; A vacuum system for regulating the pressure inside the process chamber; An argon gas line through which the argon gas injected into the rear surface of the wafer placed in the heater block flows; A unit pressure regulator for regulating a pressure of argon gas supplied to the process chamber; And a bypass line provided between the vacuum line and the argon gas line to bypass the argon gas and equipped with a bypass valve.

DISCLOSURE Technical Problem The present invention has been made to solve the above problems of the prior art, and it is an object of the present invention to provide a method for adjusting the thickness of a two-dimensional material or a thin film including graphene deposited on a substrate, And a reaction chamber of the chemical vapor deposition apparatus.

It is to be understood, however, that the technical scope of the present invention is not limited to the above-described technical problems, and other technical problems may exist.

According to one aspect of the present invention, there is provided a reaction chamber of a chemical vapor deposition apparatus including a substrate loading section to which a substrate is loaded, a gas supply section for supplying a reactive gas, And a temperature regulating device for regulating the temperature in the reaction chamber. At this time, the temperature regulating device is arranged on one side of the reaction chamber so as to face the first temperature regulating device and the first temperature regulating device formed by arranging a plurality of first conductors spaced apart by a predetermined distance and arranged side by side, And a second temperature regulator formed so that the second leads are spaced apart from each other by a predetermined distance so as to intersect the first leads.

According to any one of the above-described objects of the present invention, the internal temperature of the reaction chamber of the chemical vapor deposition apparatus can be controlled at a different temperature.

Therefore, it is possible to control the thickness and the deposition rate according to the position of the two-dimensional material or thin film including graphene deposited on one substrate, and it is possible to form a large-sized two-dimensional material and a thin film.

1 is a schematic view illustrating a structure of a reaction chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention.
2 is a schematic view illustrating a first temperature controller and a second temperature controller according to an embodiment of the present invention.
3 is a view for explaining a temperature control method of a reaction chamber according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "electrically connected" with another part in between . Also, when an element is referred to as "comprising ", it means that it can include other elements as well, without departing from the other elements unless specifically stated otherwise.

Throughout this specification, when a member is "on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

The terms "about "," substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) "or" step "used to the extent that it is used throughout the specification does not mean" step for.

Throughout this specification, the term "combination thereof" included in the expression of the machine form means one or more combinations or combinations selected from the group consisting of the constituents described in the expression of the machine form, And the like.

Hereinafter, a reaction chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings.

1 is a schematic view illustrating a structure of a reaction chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a reaction chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention includes a substrate loading unit 20, a substrate transport unit 21, a gas supply unit 30, a gas exhaust unit 40, 1 thermostat 10A and a second thermostat 10B. However, the embodiment shown in Fig. 1 is not particularly limited to Fig.

In one embodiment of the present invention, a substrate to be deposited with a two-dimensional material or a thin film may be loaded on the substrate loading unit 20. [ The substrate loading section 20 can be coupled with the substrate transport section 21 and the substrate transport section 21 can move the substrate loading section 20 into and out of the reaction chamber.

The gas supply part 30 can supply the reaction gas into the reaction chamber. The reaction gas injected through the gas supply part 30 causes a chemical reaction on the surface of the substrate, and a two-dimensional substance or a thin film of a large area can be formed on the surface of the substrate.

At this time, the two-dimensional material and the thin film may be different depending on the source gas and the reactive gas, and may include a thin film including graphene or the like, or a combination thereof, but the present invention is not limited thereto.

The reaction gas supplied by the gas supply unit 30 may be discharged through the gas exhaust unit 40. Meanwhile, a vacuum pump may be connected to the gas exhaust unit 40 to make the interior of the reaction chamber vacuum.

The first thermostat 10A and the second thermostat 10B may adjust the internal temperature of the reaction chamber. At this time, as shown in the figure, the first temperature control device 10A and the second temperature control device 10B may be arranged to face each other.

According to one embodiment of the present invention, after the substrate is loaded on the substrate loading section 20, the substrate is moved into the reaction chamber by the substrate transport section 21, and then the inside of the reaction chamber is evacuated by a vacuum pump You can make it. Subsequently, the internal temperature of the reaction chamber is heated by the first temperature adjusting device 10A and the second temperature adjusting device 10B, and graphening is performed on the surface of the substrate by the reaction gas supplied through the gas supplying part 40 Dimensional material or thin film containing the two-dimensional material.

FIG. 2 (a) is a schematic diagram of a first temperature control device according to an embodiment of the present invention, and FIG. 2 (b) is a schematic diagram of a second temperature control device according to an embodiment of the present invention.

Referring to FIG. 2A, the first temperature controller 10A according to an embodiment of the present invention includes a plurality of first conductors 100A spaced apart from each other by a predetermined distance, And an upper case 200A and a lower case 300A to protect the heat generating layer. At this time, either the upper case 200A or the lower case 300A may be formed of a heat insulating material. For example, when arranged as shown in FIG. 2A, the upper case 200A may be formed of a heat insulating material.

The first conductive line 100A may be formed of a metal such as aluminum (Al), gold (Au), platinum (Pt), nickel (Ni), graphene, silver nanowire film, metal grid, indium tin oxide ITO), or a combination thereof. However, the present invention is not limited thereto.

2B, the second temperature controller 10B according to an embodiment of the present invention includes an upper case 300B (not shown) for protecting the heat generating layer and the heat generating layer, like the first temperature adjusting device 10A. And a lower case 200B. At this time, the heating layer may be formed such that the plurality of second conductive lines 100B intersect with the first conductive line 100A, are spaced apart from each other by a predetermined distance, and are parallel to each other. At this time, either the upper case 300B or the lower case 200B may be formed of a heat insulating material. For example, when arranged as shown in FIG. 2B, the lower case 200B may be formed of a heat insulating material. That is, any one of the upper case 200A, 300B or the lower case 300A, 200B of the first temperature adjusting device 10A and the second temperature adjusting device 10B, which faces the outside of the reaction chamber, .

That is, the first temperature control device 10A and the second temperature control device 10B may be formed in the same configuration. However, it may be classified into the first temperature control device 10A or the second temperature control device 10B depending on the arrangement.

Meanwhile, the reaction chamber according to an embodiment of the present invention includes a plurality of first conductive lines 100A and a control unit (not shown) connected to the second conductive lines 100B.

The control unit can individually control the temperature of each of the first or second conductors, so that the temperature inside the chamber can be adjusted accordingly.

The first thermostat 10A and the second thermostat 10B of the reaction chamber according to another embodiment of the present invention may replace the first conductor 100A and the second conductor 100B with silicon carbide a silicon carbide (SiC) heater or a ramp-type heater can be used. Therefore, similarly to the above, it is also possible to control the temperature inside the reaction chamber by individually controlling the respective heater temperatures.

3 is a view for explaining a temperature control method of a reaction chamber according to an embodiment of the present invention.

Referring to FIG. 3, the first temperature controller 10A according to the embodiment of the present invention includes n (n is a natural number) first conductors 100A, and the second temperature controller 10B includes m and m is a natural number) second conductive lines 100B. At this time, n and m may be the same.

The temperature of each of the first conductor line 100A and the second conductor line 100B can be controlled by the control unit, so that the temperature inside the reaction chamber can be controlled. For example, the temperature of the first conductor line 100A arranged in the y direction and the temperature of the second conductor line 100B arranged in the x direction in the three-dimensional space are controlled so that the temperature Can be controlled.

More specifically, as shown in FIG. 3, the temperature T z1 at one point P 1 inside the reaction chamber is the temperature T x1 of the first conductor 100_1A and the temperature of the second conductor 100_1B is T y1 Lt; / RTI >

Therefore, the temperature T zn at an arbitrary point P n in the reaction chamber can be calculated by the following equation (1), and the reaction is performed according to the temperature difference between the first temperature controller 10A and the second temperature controller 10B A temperature curve for each height and position of the chamber interior space can be formed. However, this is not limited to Equation (1), and a calibration curve may be formed according to various embodiments depending on the use of the user.

Figure 112015077874250-pat00001

Here, d xn represents the distance from the arbitrary point P to the first conductor 100A, and d yn represents the distance from the arbitrary point P to the second conductor 100B.

As described above, the reaction chamber according to the embodiment of the present invention includes the first conductor 100A and the second conductor 100B included in the first temperature controller 10A and the second temperature controller 10B, respectively, The temperature at any one point in the reaction chamber can be controlled.

Therefore, it is possible to control the thickness and the deposition rate depending on the position of the two-dimensional material or thin film including graphene deposited on one substrate.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

10A: first thermostat
10B: Second thermostat
20: substrate loading unit
21:
30: gas supply unit
40: gas exhaust part
100A: first conductor
100B: second conductor

Claims (5)

In the reaction chamber of the chemical vapor deposition apparatus,
A substrate loading section on which the substrate is loaded,
A gas supply part for supplying a reactive gas,
A gas exhaust part for exhausting the reactive gas,
A temperature regulating device for regulating the temperature in the reaction chamber, and
And a controller for controlling the temperature of the temperature controller,
The temperature regulating device
A first temperature regulating device formed on one side of the reaction chamber, the first temperature regulating device having a plurality of first conductors spaced apart from each other by a predetermined distance and arranged in parallel with each other;
And a second temperature regulating device disposed to face the first temperature regulating device and spaced apart by a predetermined distance so as to intersect the first lead lines,
The control unit
Connected to the respective first and second leads
Through the temperature setting of each of the first and second leads,
The temperature of any point located between the first temperature control device and the second temperature control device is adjusted,
Wherein the temperature (Tzn) at an arbitrary point (Pn) in the reaction chamber is controlled by the equation (1).
[Equation 1]
Figure 112016089098386-pat00002

Where T xn is the temperature of the first conductor, T yn is the temperature of the second conductor,
d xn is the distance from an arbitrary point P to the first conductor, and
d yn represents the distance from an arbitrary point P to the second conductor. delete delete The method according to claim 1,
And a heat insulating layer on the upper side or the lower side of the first temperature adjusting device,
A reaction chamber of a chemical vapor deposition apparatus. The method according to claim 1,
Further comprising a vacuum pump for bringing the inside of the reaction chamber into a vacuum state.
KR1020150113405A 2015-08-11 2015-08-11 Chamber for chemical vapor deposition device KR101691993B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200028134A (en) * 2018-09-06 2020-03-16 주식회사 원익아이피에스 Substrate processing apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100840767B1 (en) * 2008-02-28 2008-06-23 주식회사 지에이엔텍 Apparatus and method for manufacturing gan semiconductor substrate
KR20090045984A (en) * 2007-11-05 2009-05-11 주식회사 실트론 Heating apparatus enhanced in temperature uniformity on substrate and chemical vapor deposition apparatus using the same
KR20120109355A (en) * 2011-03-24 2012-10-08 가부시키가이샤 뉴플레어 테크놀로지 Film forming apparatus and film forming method
KR20130072646A (en) * 2011-12-22 2013-07-02 엘지이노텍 주식회사 Deposition apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090045984A (en) * 2007-11-05 2009-05-11 주식회사 실트론 Heating apparatus enhanced in temperature uniformity on substrate and chemical vapor deposition apparatus using the same
KR100840767B1 (en) * 2008-02-28 2008-06-23 주식회사 지에이엔텍 Apparatus and method for manufacturing gan semiconductor substrate
KR20120109355A (en) * 2011-03-24 2012-10-08 가부시키가이샤 뉴플레어 테크놀로지 Film forming apparatus and film forming method
KR20130072646A (en) * 2011-12-22 2013-07-02 엘지이노텍 주식회사 Deposition apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200028134A (en) * 2018-09-06 2020-03-16 주식회사 원익아이피에스 Substrate processing apparatus
KR102423269B1 (en) * 2018-09-06 2022-07-21 주식회사 원익아이피에스 Substrate processing apparatus

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