JP6339512B2 - 過酸化水素を半導体処理チャンバへ送る方法及びシステム - Google Patents

過酸化水素を半導体処理チャンバへ送る方法及びシステム Download PDF

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JP6339512B2
JP6339512B2 JP2015058314A JP2015058314A JP6339512B2 JP 6339512 B2 JP6339512 B2 JP 6339512B2 JP 2015058314 A JP2015058314 A JP 2015058314A JP 2015058314 A JP2015058314 A JP 2015058314A JP 6339512 B2 JP6339512 B2 JP 6339512B2
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evaporator
temperature
supply line
processing chamber
hydrogen peroxide
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JP2015192148A (ja
JP2015192148A5 (enExample
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ベルト ヨングブレート
ベルト ヨングブレート
ディーター ピエール
ディーター ピエール
デル ユート コルネリウス エー． ファン
デル ユート コルネリウス エー． ファン
ルシアン ユディラ
ルシアン ユディラ
ラドコ ジェラルド バンクラス
ラドコ ジェラルド バンクラス
テオドルス ジー．エム． オーステルラーケン
テオドルス ジー．エム． オーステルラーケン
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エーエスエム アイピー ホールディング ビー．ブイ．
エーエスエム アイピー ホールディング ビー．ブイ．
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/013—Separation; Purification; Concentration
    • C01B15/017—Anhydrous hydrogen peroxide; Anhydrous solutions or gaseous mixtures containing hydrogen peroxide
    • H10P72/0402—

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  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2015058314A 2014-03-28 2015-03-20 過酸化水素を半導体処理チャンバへ送る方法及びシステム Active JP6339512B2 (ja)

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US201461972005P 2014-03-28 2014-03-28
US61/972,005 2014-03-28

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JP2015192148A JP2015192148A (ja) 2015-11-02
JP2015192148A5 JP2015192148A5 (enExample) 2016-10-20
JP6339512B2 true JP6339512B2 (ja) 2018-06-06

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JP2015058314A Active JP6339512B2 (ja) 2014-03-28 2015-03-20 過酸化水素を半導体処理チャンバへ送る方法及びシステム

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US (1) US10343907B2 (enExample)
JP (1) JP6339512B2 (enExample)
KR (1) KR102158779B1 (enExample)
TW (1) TWI682043B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190083669A1 (en) * 2016-04-27 2019-03-21 Tetra Laval Holdings & Finance S.A. A hydrogen peroxide evaporation device, and a method for evaporating hydrogen peroxide
US10679830B2 (en) * 2016-06-20 2020-06-09 Applied Materials, Inc. Cleaning process for removing boron-carbon residuals in processing chamber at high temperature
WO2018179507A1 (ja) * 2017-03-27 2018-10-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US11788190B2 (en) * 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
EP3786321A3 (de) 2019-08-27 2021-03-17 Albert-Ludwigs-Universität Freiburg Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat
CN111945135B (zh) * 2020-07-27 2022-04-26 江苏菲沃泰纳米科技股份有限公司 二进料蒸发装置及其进料方法
JP7556128B2 (ja) 2020-07-27 2024-09-25 江蘇菲沃泰納米科技股▲フン▼有限公司 原料気化装置、コーティング装置、コーティング機器及びその材料投入方法
KR102310908B1 (ko) * 2021-04-30 2021-10-08 (주) 리노닉스 질소 가스의 단독 사용이 가능한 캐리어 가스 공급장치

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2491732A (en) * 1946-05-17 1949-12-20 Du Pont Method of vaporizing hydrogen peroxide
JPH0299831A (ja) 1988-10-06 1990-04-11 Koujiyundo Kagaku Kenkyusho:Kk 管内流量の制御方法とその装置
JPH02161726A (ja) 1988-12-14 1990-06-21 Mitsubishi Electric Corp 電子部材または電子デバイスの製造方法
US5242468A (en) * 1991-03-19 1993-09-07 Startec Ventures, Inc. Manufacture of high precision electronic components with ultra-high purity liquids
ATE187277T1 (de) 1992-07-04 1999-12-15 Trikon Equip Ltd Behandlungsverfahren für eine halbleiterscheibe.
JP3017637B2 (ja) 1994-04-15 2000-03-13 シャープ株式会社 洗浄装置
JPH08313468A (ja) * 1995-05-24 1996-11-29 Taiyo Toyo Sanso Co Ltd 過酸化水素蒸気の濃度検出方法及びその装置
US5944940A (en) * 1996-07-09 1999-08-31 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
JP3291227B2 (ja) 1997-11-28 2002-06-10 大陽東洋酸素株式会社 過酸化水素蒸気による処理システムにおける過酸化水素蒸気濃度検出方法及びその装置
FR2774912B1 (fr) * 1998-02-16 2000-09-01 Sidel Sa Procede pour steriliser des corps creux et dispositif pour la mise en oeuvre
JP3392789B2 (ja) 1999-09-14 2003-03-31 三菱重工業株式会社 熱酸化方法およびその装置
JP2001230246A (ja) 2000-02-17 2001-08-24 Mitsubishi Heavy Ind Ltd 半導体の熱酸化方法および熱酸化装置
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
US6759081B2 (en) 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
US6606917B2 (en) * 2001-11-26 2003-08-19 Emerson Electric Co. High purity coriolis mass flow controller
US6562735B1 (en) 2001-12-11 2003-05-13 Lsi Logic Corporation Control of reaction rate in formation of low k carbon-containing silicon oxide dielectric material using organosilane, unsubstituted silane, and hydrogen peroxide reactants
US6905939B2 (en) 2002-02-27 2005-06-14 Applied Materials, Inc. Process for forming silicon oxide material
EP1852132B1 (en) * 2002-03-28 2012-10-03 Bioquell UK Limited Method and apparatus for decontaminating enclosed spaces
US6734405B2 (en) * 2002-06-12 2004-05-11 Steris Inc. Vaporizer using electrical induction to produce heat
WO2004027849A1 (ja) 2002-09-20 2004-04-01 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
US20060165904A1 (en) 2005-01-21 2006-07-27 Asm Japan K.K. Semiconductor-manufacturing apparatus provided with ultraviolet light-emitting mechanism and method of treating semiconductor substrate using ultraviolet light emission
EP1790758A1 (en) 2005-11-25 2007-05-30 Interuniversitair Microelektronica Centrum ( Imec) Atomic layer deposition (ald) method for producing a high quality layer
US20060286306A1 (en) 2005-06-17 2006-12-21 Asm Japan K.K. Method of producing advanced low dielectric constant film by UV light emission
US20070009673A1 (en) 2005-07-06 2007-01-11 Asm Japan K.K. Insulation film and method for manufacturing same
JP5171625B2 (ja) 2006-07-20 2013-03-27 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
US20080220619A1 (en) 2007-03-09 2008-09-11 Asm Japan K.K. Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
US20090093135A1 (en) 2007-10-04 2009-04-09 Asm Japan K.K. Semiconductor manufacturing apparatus and method for curing material with uv light
US20090093134A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K Semiconductor manufacturing apparatus and method for curing materials with uv light
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US20090305515A1 (en) 2008-06-06 2009-12-10 Dustin Ho Method and apparatus for uv curing with water vapor
US8765233B2 (en) 2008-12-09 2014-07-01 Asm Japan K.K. Method for forming low-carbon CVD film for filling trenches
JP2012060000A (ja) 2010-09-10 2012-03-22 Toshiba Corp シリコン酸化膜の製造装置
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
KR101615584B1 (ko) 2011-11-21 2016-04-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 장치, 반도체 장치의 제조 방법 및 기록 매체
CN104011839B (zh) 2011-12-20 2017-02-22 株式会社日立国际电气 衬底处理装置、半导体器件的制造方法及气化装置
JP5967939B2 (ja) 2012-01-10 2016-08-10 株式会社ディスコ 液体供給装置の管理方法
CN104203381B (zh) 2012-03-28 2017-05-17 拉瑟克公司 从多组分溶液输送工艺气体的方法
JP6156972B2 (ja) 2012-04-06 2017-07-05 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、気化システムおよびミストフィルタ
US9545585B2 (en) 2012-07-16 2017-01-17 Rasirc, Inc. Method, system, and device for delivery of high purity hydrogen peroxide
KR101750633B1 (ko) 2012-07-30 2017-06-23 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2

Also Published As

Publication number Publication date
KR102158779B1 (ko) 2020-09-23
JP2015192148A (ja) 2015-11-02
US20150279693A1 (en) 2015-10-01
TW201544611A (zh) 2015-12-01
KR20150112876A (ko) 2015-10-07
TWI682043B (zh) 2020-01-11
US10343907B2 (en) 2019-07-09

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