JP6339512B2 - 過酸化水素を半導体処理チャンバへ送る方法及びシステム - Google Patents
過酸化水素を半導体処理チャンバへ送る方法及びシステム Download PDFInfo
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- JP6339512B2 JP6339512B2 JP2015058314A JP2015058314A JP6339512B2 JP 6339512 B2 JP6339512 B2 JP 6339512B2 JP 2015058314 A JP2015058314 A JP 2015058314A JP 2015058314 A JP2015058314 A JP 2015058314A JP 6339512 B2 JP6339512 B2 JP 6339512B2
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- Prior art keywords
- evaporator
- temperature
- supply line
- processing chamber
- hydrogen peroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000012545 processing Methods 0.000 title claims description 72
- 239000004065 semiconductor Substances 0.000 title claims description 36
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims description 34
- 238000000034 method Methods 0.000 title claims description 30
- 239000007788 liquid Substances 0.000 claims description 30
- 238000001704 evaporation Methods 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 description 18
- 230000008020 evaporation Effects 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 9
- 230000009257 reactivity Effects 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920013730 reactive polymer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
- C01B15/01—Hydrogen peroxide
- C01B15/013—Separation; Purification; Concentration
- C01B15/017—Anhydrous hydrogen peroxide; Anhydrous solutions or gaseous mixtures containing hydrogen peroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461972005P | 2014-03-28 | 2014-03-28 | |
| US61/972,005 | 2014-03-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015192148A JP2015192148A (ja) | 2015-11-02 |
| JP2015192148A5 JP2015192148A5 (enExample) | 2016-10-20 |
| JP6339512B2 true JP6339512B2 (ja) | 2018-06-06 |
Family
ID=54191409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015058314A Active JP6339512B2 (ja) | 2014-03-28 | 2015-03-20 | 過酸化水素を半導体処理チャンバへ送る方法及びシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10343907B2 (enExample) |
| JP (1) | JP6339512B2 (enExample) |
| KR (1) | KR102158779B1 (enExample) |
| TW (1) | TWI682043B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109195639B (zh) * | 2016-04-27 | 2021-09-14 | 利乐拉瓦尔集团及财务有限公司 | 过氧化氢蒸发装置和蒸发过氧化氢的方法 |
| CN109690730B (zh) * | 2016-06-20 | 2023-03-31 | 应用材料公司 | 在高温下去除处理腔室中的硼-碳残留物的清洁工艺 |
| WO2018179507A1 (ja) * | 2017-03-27 | 2018-10-04 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US11788190B2 (en) * | 2019-07-05 | 2023-10-17 | Asm Ip Holding B.V. | Liquid vaporizer |
| EP3786321A3 (de) * | 2019-08-27 | 2021-03-17 | Albert-Ludwigs-Universität Freiburg | Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat |
| EP4190939A4 (en) | 2020-07-27 | 2024-09-25 | Jiangsu Favored Nanotechnology Co., Ltd. | RAW MATERIAL GASIFICATION DEVICE, FILM COATING DEVICE, FILM COATING APPARATUS AND FEEDING METHOD THEREFOR |
| CN111945135B (zh) * | 2020-07-27 | 2022-04-26 | 江苏菲沃泰纳米科技股份有限公司 | 二进料蒸发装置及其进料方法 |
| KR102310908B1 (ko) * | 2021-04-30 | 2021-10-08 | (주) 리노닉스 | 질소 가스의 단독 사용이 가능한 캐리어 가스 공급장치 |
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| US2491732A (en) * | 1946-05-17 | 1949-12-20 | Du Pont | Method of vaporizing hydrogen peroxide |
| JPH0299831A (ja) | 1988-10-06 | 1990-04-11 | Koujiyundo Kagaku Kenkyusho:Kk | 管内流量の制御方法とその装置 |
| JPH02161726A (ja) * | 1988-12-14 | 1990-06-21 | Mitsubishi Electric Corp | 電子部材または電子デバイスの製造方法 |
| US5242468A (en) * | 1991-03-19 | 1993-09-07 | Startec Ventures, Inc. | Manufacture of high precision electronic components with ultra-high purity liquids |
| WO1994001885A1 (en) | 1992-07-04 | 1994-01-20 | Christopher David Dobson | A method of treating a semiconductor wafer |
| JP3017637B2 (ja) | 1994-04-15 | 2000-03-13 | シャープ株式会社 | 洗浄装置 |
| JPH08313468A (ja) * | 1995-05-24 | 1996-11-29 | Taiyo Toyo Sanso Co Ltd | 過酸化水素蒸気の濃度検出方法及びその装置 |
| US5944940A (en) * | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
| JP3291227B2 (ja) | 1997-11-28 | 2002-06-10 | 大陽東洋酸素株式会社 | 過酸化水素蒸気による処理システムにおける過酸化水素蒸気濃度検出方法及びその装置 |
| FR2774912B1 (fr) * | 1998-02-16 | 2000-09-01 | Sidel Sa | Procede pour steriliser des corps creux et dispositif pour la mise en oeuvre |
| JP3392789B2 (ja) | 1999-09-14 | 2003-03-31 | 三菱重工業株式会社 | 熱酸化方法およびその装置 |
| JP2001230246A (ja) | 2000-02-17 | 2001-08-24 | Mitsubishi Heavy Ind Ltd | 半導体の熱酸化方法および熱酸化装置 |
| US6492283B2 (en) | 2000-02-22 | 2002-12-10 | Asm Microchemistry Oy | Method of forming ultrathin oxide layer |
| US6759081B2 (en) | 2001-05-11 | 2004-07-06 | Asm International, N.V. | Method of depositing thin films for magnetic heads |
| US6606917B2 (en) * | 2001-11-26 | 2003-08-19 | Emerson Electric Co. | High purity coriolis mass flow controller |
| US6562735B1 (en) | 2001-12-11 | 2003-05-13 | Lsi Logic Corporation | Control of reaction rate in formation of low k carbon-containing silicon oxide dielectric material using organosilane, unsubstituted silane, and hydrogen peroxide reactants |
| US6905939B2 (en) | 2002-02-27 | 2005-06-14 | Applied Materials, Inc. | Process for forming silicon oxide material |
| CA2480859C (en) * | 2002-03-28 | 2008-01-15 | Bioquell Uk Limited | Methods and apparatus for decontaminating enclosed spaces |
| US6734405B2 (en) * | 2002-06-12 | 2004-05-11 | Steris Inc. | Vaporizer using electrical induction to produce heat |
| JPWO2004027849A1 (ja) | 2002-09-20 | 2006-01-19 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
| US20060165904A1 (en) | 2005-01-21 | 2006-07-27 | Asm Japan K.K. | Semiconductor-manufacturing apparatus provided with ultraviolet light-emitting mechanism and method of treating semiconductor substrate using ultraviolet light emission |
| EP1790758A1 (en) | 2005-11-25 | 2007-05-30 | Interuniversitair Microelektronica Centrum ( Imec) | Atomic layer deposition (ald) method for producing a high quality layer |
| US20060286306A1 (en) | 2005-06-17 | 2006-12-21 | Asm Japan K.K. | Method of producing advanced low dielectric constant film by UV light emission |
| US20070009673A1 (en) | 2005-07-06 | 2007-01-11 | Asm Japan K.K. | Insulation film and method for manufacturing same |
| KR101060633B1 (ko) | 2006-07-20 | 2011-08-31 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 반도체 디바이스의 제조 방법 및 기판 처리 장치 |
| US7718553B2 (en) | 2006-09-21 | 2010-05-18 | Asm Japan K.K. | Method for forming insulation film having high density |
| US20080220619A1 (en) | 2007-03-09 | 2008-09-11 | Asm Japan K.K. | Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation |
| US7781352B2 (en) | 2007-06-06 | 2010-08-24 | Asm Japan K.K. | Method for forming inorganic silazane-based dielectric film |
| US7501292B2 (en) | 2007-07-19 | 2009-03-10 | Asm Japan K.K. | Method for managing UV irradiation for curing semiconductor substrate |
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| US7651959B2 (en) | 2007-12-03 | 2010-01-26 | Asm Japan K.K. | Method for forming silazane-based dielectric film |
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| US20090305515A1 (en) | 2008-06-06 | 2009-12-10 | Dustin Ho | Method and apparatus for uv curing with water vapor |
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| JP6038043B2 (ja) * | 2011-11-21 | 2016-12-07 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| JP6199744B2 (ja) | 2011-12-20 | 2017-09-20 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および気化装置 |
| JP5967939B2 (ja) | 2012-01-10 | 2016-08-10 | 株式会社ディスコ | 液体供給装置の管理方法 |
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| WO2014014511A1 (en) | 2012-07-16 | 2014-01-23 | Rasirc | Method, system, and device for delivery of high purity hydrogen peroxide |
| CN104520975B (zh) | 2012-07-30 | 2018-07-31 | 株式会社日立国际电气 | 衬底处理装置及半导体器件的制造方法 |
| US9171715B2 (en) | 2012-09-05 | 2015-10-27 | Asm Ip Holding B.V. | Atomic layer deposition of GeO2 |
-
2015
- 2015-03-17 US US14/660,789 patent/US10343907B2/en active Active
- 2015-03-18 TW TW104108551A patent/TWI682043B/zh active
- 2015-03-20 JP JP2015058314A patent/JP6339512B2/ja active Active
- 2015-03-26 KR KR1020150042555A patent/KR102158779B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR102158779B1 (ko) | 2020-09-23 |
| TWI682043B (zh) | 2020-01-11 |
| US10343907B2 (en) | 2019-07-09 |
| JP2015192148A (ja) | 2015-11-02 |
| US20150279693A1 (en) | 2015-10-01 |
| TW201544611A (zh) | 2015-12-01 |
| KR20150112876A (ko) | 2015-10-07 |
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